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Description
Rapid processing and reduced end-of-range diffusion effects demonstrate that susceptor-assisted microwave annealing is an efficient processing alternative for electrically activating dopants and removing ion-implantation damage in ion-implanted semiconductors. Sheet resistance and Hall measurements provide evidence of electrical activation. Raman spectroscopy and ion channeling analysis monitor the extent of ion implantation damage and recrystallization. The presence of damage and defects in ion implanted silicon, and the reduction of the defects as a result of annealing, is observed by Rutherford backscattering spectrometry, moreover, the boron implanted silicon is further investigated by cross-section transmission electron microscopy. When annealing B+ implanted silicon, the dissolution of small extended defects and growth of large extended defects result in reduced crystalline quality that hinders the electrical activation process. Compared to B+ implanted silicon, phosphorus implanted samples experience more effective activation and achieve better crystalline quality. Comparison of end-of-range dopants diffusion resulting from microwave annealing and rapid thermal annealing (RTA) is done using secondary ion mass spectroscopy. Results from microwave annealed P+ implanted samples show that almost no diffusion occurs during time periods required for complete dopant activation and silicon recrystallization. The relative contributions to heating of the sample, by a SiC susceptor, and by Si self-heating in the microwave anneal, were also investigated. At first 20s, the main contributor to the sample's temperature rise is Si self-heating by microwave absorption.
ContributorsZhao, Zhao (Author) / Alford, Terry Lynn (Thesis advisor) / Theodore, David (Committee member) / Krause, Stephen (Committee member) / Arizona State University (Publisher)
Created2013
Description
In this dissertation, far UV spectroscopy is applied to investigate the optical properties of dielectric thin films grown by atomic layer deposition. The far UV (120 – 200 nm) reflectance for several dielectric oxides and fluorides, including AlF3, Al2O3, Ga2O3, HfO2, and SiO2, was measured at variable angles and thicknesses. Multiple optical calculation methods were developed for the accurate determination of the optical constants from the reflectance. The deduced optical constants were used for optical designs, such as high-reflectivity coatings, and Fabry-Perot bandpass interference filters. Three filters were designed for use at 157 nm, 212 nm, and 248 nm wavelengths, based on multilayer structures consisting of SiO2, Al2O3, HfO2, and AlF3. A thorough error analysis was made to quantify the non-idealities of the optical performance for the designed filters. Far UV spectroscopy was also applied to analyze material mixtures, such as AlF3/Al and h-BN/c-BN mixtures. Using far UV spectroscopy, different phases in the composite can be distinguished, and the volume concentration of each constituent can be determined. A middle UV reflective coating based on A2O3 and AlF3 was fabricated and characterized. The reflective coating has a smooth surface (?? < 1 nm), and a peak reflectance of 25 – 30 % at a wavelength of 196 nm. The peak reflectance deviated from the design, and an analysis of the AlF3 layer prepared by plasma-enhanced atomic layer deposition (PEALD) indicated the presence of Al-rich clusters, which were associated with the UV absorption. Complementary techniques, such as spectroscopic ellipsometry, and X-ray photoelectron spectroscopy, were used to verify the results from far UV spectroscopy. In conclusion, this Dissertation demonstrated the use of in-situ far UV spectroscopy to investigate the optical properties of thin films at short wavelengths. This work extends the application of far UV spectroscopy to ultrawide bandgap semiconductors and insulators. This work supports a path forward for far UV optical filters and devices. Various errors have been discussed with solutions proposed for future research of methods and materials for UV optics.
ContributorsHuang, Zhiyu (Author) / Nemanich, Robert (Thesis advisor) / Ponce, Fernando (Committee member) / Menéndez, Jose (Committee member) / Holman, Zachary (Committee member) / Arizona State University (Publisher)
Created2021
Description
This work correlates microscopic material changes to short- and long-term performance in modern, Cu-doped, CdTe-based solar cells. Past research on short- and long-term performance emphasized the device-scale impact of Cu, but neglected the microscopic impact of the other chemical species in the system (e.g., Se, Cl, Cu), their distributions, their local atomic environments, or their interactions/reactions. Additionally, technological limitations precluded nanoscale measurements of the Cu distributions in the cell, and microscale measurements of the material properties (i.e. composition, microstructure, charge transport) as the cell operates. This research aims to answer (1) what is the spatial distribution of Cu in the cell, (2) how does its distribution and local environment correlate with cell performance, and (3) how do local material properties change as the cell operates? This work employs a multi-scale, multi-modal, correlative-measurement approach to elucidate microscopic mechanisms. Several analytical techniques are used – including and especially correlative synchrotron X-ray microscopy – and a unique state-of-the-art instrument was developed to access the dynamics of microscopic mechanisms as they proceed. The work shows Cu segregates around CdTe grain boundaries, and Cu-related acceptor penetration into the CdTe layer is crucial for well-performing cells. After long-term operation, the work presents strong evidence of Se migration into the CdTe layer. This redistribution correlates with microstructural changes in the CdTe layer and limited charge transport around the metal-CdTe interface. Finally, the work correlates changes in microstructure, Cu atomic environment, and charge collection as a cell operates. The results suggest that, as the cell ages, a change to Cu local environment limits charge transport through the metal-CdTe interface, and this change could be influenced by Se migration into the CdTe layer of the cell.
ContributorsWalker, Trumann (Author) / Bertoni, Mariana I (Thesis advisor) / Holman, Zachary (Committee member) / Chan, Candace (Committee member) / Colegrove, Eric (Committee member) / Arizona State University (Publisher)
Created2022
Description
The application of silicon thin films in solar cells has evolved from their use in amorphous silicon solar cells to their use as passivating and carrier-selective contacts in crystalline silicon solar cells. Their use as carrier-selective contacts has enabled crystalline silicon solar cell efficiencies above 26%, just 3% shy of the theoretical efficiency limit. The two cell architectures that have exceeded 26% are the silicon heterojunction and tunnel oxide passivating contact cell. These two cell architectures use two different forms of silicon thin films. In the case of the silicon heterojunction, the crystalline wafer is sandwiched between layers of intrinsic amorphous silicon, which acts as the passivation layer, and doped amorphous silicon, which acts as the carrier-selective layer. On the other hand, the tunnel oxide passivating contact cell uses a thin silicon oxide passivation layer and a doped polycrystalline silicon layer as the carrier-selective layer. Both cell structures have their distinct advantages and disadvantages when it comes to production. The processing of the silicon heterojunction relies on a low thermal budget and leads to high open-circuit voltages, but the cost of high-vacuum processing equipment presents a major hurdle for industrial scale production while the tunnel oxide passivating contact can be easily integrated into current industrial lines, yet it requires a higher thermal budgets and does not produce as high of an open-circuit voltage as the silicon heterojunction. This work focuses on using both forms of silicon thin films applied as passivating and carrier-selective contacts to crystalline silicon thin films.First, a thorough analysis of the series resistivity in silicon heterojunction solar cells is conducted. In particular, variations in the thickness and doping of the individual
ii
contact layers are performed to reveal their effect on the contact resistivity and in turn the total series resistivity of the cell. Second, a tunnel oxide passivated contact is created using a novel deposition method for the silicon oxide layer. A 21% efficient proof-of-concept device is presented demonstrating the potential of this deposition method. Finally, recommendations to further improve the efficiency of these cells is presented.
ContributorsWeigand, William (Author) / Holman, Zachary (Thesis advisor) / Yu, Zhengshan (Committee member) / Bertoni, Mariana (Committee member) / Tongay, Sefaattin (Committee member) / Arizona State University (Publisher)
Created2023
Description
In polycrystalline thin-film cadmium telluride (CdTe) solar cells, atomic defects (dopants: copper (Cu), arsenic (As); and selenium (Se) alloy) have significantly enhanced hole density and minority carrier lifetime. Density functional theory (DFT) has predicted the atomic configurations of relevant defects and their electronic structures. Yet, experimental evidence of the defects, especially their spatial distribution across the absorber, is still lacking. Herein, since it can probe local atomic structure of elements of interest with trace-elemental sensitivity, nanoprobe X-ray absorption near edge structure (XANES) spectroscopy was used to elucidate atomic structures of Cu, As, and Se. After XANES spectra were measured from CdTe devices, the atomic information was extracted from the measured spectra by fitting them with reference spectra, which were simulated from 1) point defects and grain boundaries (GBs) predicted by DFT; 2) secondary phases which could form under processing conditions. XANES analysis of various device architectures revealed structural inhomogeneities across the absorbers from point defects to secondary phases. The majority of the Cu dopant atoms form secondary phases with surrounding atoms even inside the absorbers, explaining the low dopant activation. When entering the target lattice site (Cd), Cu forms a complex with chlorine (Cl) and becomes a donor defect, compensating hole density. Compared to Cu, As dopant tends to enter the target site (Te) more frequently, explaining higher hole density in As-doped CdTe. Notably, As on the Te site forms neutral charged complexes with Cl. Although they are not as detrimental as the Cu-Cl complex, the As-Cl complexes may be responsible for low dopant activation and compensation observed in As-doped CdTe devices. Complementary to the DFT prediction, this work provided the distribution of Se local structures across the absorber, specifically the variation of Se-Cd bond lengths in differently performing areas. Under environmental stressors (heat and light), it showed atomic reconfiguration of Se and Cl at GBs, and Se diffusion into the bulk, co-occurring with device degradation. This framework was also extended to study defect evolution in other thin-film solar cells (CIGS and emerging perovskite). XANES analysis has shed light on atomic defects governing solar cell performance and stability, which are crucial in pushing the efficiency toward the theoretical efficiency limit.
ContributorsRojsatien, Srisuda (Author) / Bertoni, Mariana I. (Thesis advisor) / Mannodi-Kanakkithodi, Arun (Committee member) / Mu, Linqin (Committee member) / Holman, Zachary (Committee member) / Arizona State University (Publisher)
Created2024
Description
The metallization and interconnection of Si photovoltaic (PV) devices are among some of the most critically important aspects to ensure the PV cells and modules are cost-effective, highly-efficient, and robust through environmental stresses. The aim of this work is to contribute to the development of these innovations to move them closer to commercialization.Shingled PV modules and laser-welded foil-interconnected modules present an alternative to traditional soldered ribbons that can improve module power densities in a cost-effective manner. These two interconnection methods present new technical challenges for the PV industry. This work presents x-ray imaging methods to aid in the process-optimization of the application and curing of the adhesive material used in shingled modules. Further, detailed characterization of laser welds, their adhesion, and their effect on module performances is conducted. A strong correlation is found between the laser-weld adhesion and the modules’ durability through thermocycling. A minimum laser weld adhesion of 0.8 mJ is recommended to ensure a robust interconnection is formed.
Detailed characterization and modelling are demonstrated on a 21% efficient double-sided tunnel-oxide passivating contact (DS-TOPCon) cell. This technology uses a novel approach that uses the front-metal grid to etch-away the parasitically-absorbing poly-Si material everywhere except for underneath the grid fingers. The modelling yielded a match to the experimental device within 0.06% absolute of its efficiency. This DS-TOPCon device could be improved to a 23.45%-efficient device by improving the optical performance, n-type contact resistivity, and grid finger aspect ratio.
Finally, a modelling approach is explored for simulating Si thermophotovoltaic (TPV) devices. Experimentally fabricated diffused-junction devices are used to validate the optical and electrical aspects of the model. A peak TPV efficiency of 6.8% is predicted for the fabricated devices, but a pathway to 32.5% is explained by reducing the parasitic absorption of the contacts and reducing the wafer thickness. Additionally, the DS-TOPCon technology shows the potential for a 33.7% efficient TPV device.
ContributorsHartweg, Barry (Author) / Holman, Zachary (Thesis advisor) / Chan, Candace (Committee member) / Bertoni, Mariana (Committee member) / Yu, Zhengshan (Committee member) / Arizona State University (Publisher)
Created2023
Description
Achieving high efficiency in solar cells requires optimal photovoltaics materials for light absorption and as with any electrical device—high-quality contacts. Essentially, the contacts separate the charge carriers—holes at one terminal and electrons at the other—extracting them to an external circuit. For this purpose, the development of passivating and carrier-selective contacts that enable low interface defect density and efficient carrier transport is critical for making high-efficiency solar cells. The recent record-efficiency n-type silicon cells with hydrogenated amorphous silicon (a-Si:H) contacts have demonstrated the usefulness of passivating and carrier-selective contacts. However, the use of a-Si:H contacts should not be limited in just n-type silicon cells.
In the present work, a-Si:H contacts for crystalline silicon and cadmium telluride (CdTe) solar cells are developed. First, hydrogen-plasma-processsed a-Si:H contacts are used in n-type Czochralski silicon cell fabrication. Hydrogen plasma treatment is used to increase the Si-H bond density of a-Si:H films and decrease the dangling bond density at the interface, which leads to better interface passivation and device performance, and wider temperature-processing window of n-type silicon cells under full spectrum (300–1200 nm) illumination. In addition, thickness-varied a-Si:H contacts are studied for n-type silicon cells under the infrared spectrum (700–1200 nm) illumination, which are prepared for silicon-based tandem applications.
Second, the a-Si:H contacts are applied to commercial-grade p-type silicon cells, which have much lower bulk carrier lifetimes than the n-type silicon cells. The approach is using gettering and bulk hydrogenation to improve the p-type silicon bulk quality, and then applying a-Si:H contacts to enable excellent surface passivation and carrier transport. This leads to an open-circuit voltage of 707 mV in p-type Czochralski silicon cells, and of 702 mV, the world-record open-circuit voltage in p-type multi-crystalline silicon cells.
Finally, CdTe cells with p-type a-Si:H hole-selective contacts are studied. As a proof of concept, p-type a-Si:H contacts enable achieving the highest reported open-circuit voltages (1.1 V) in mono-crystalline CdTe devices. A comparative study of applying p-type a-Si:H contacts in poly-crystalline CdTe solar cells is performed, resulting in absolute voltage gain of 53 mV over using the standard tellurium contacts.
In the present work, a-Si:H contacts for crystalline silicon and cadmium telluride (CdTe) solar cells are developed. First, hydrogen-plasma-processsed a-Si:H contacts are used in n-type Czochralski silicon cell fabrication. Hydrogen plasma treatment is used to increase the Si-H bond density of a-Si:H films and decrease the dangling bond density at the interface, which leads to better interface passivation and device performance, and wider temperature-processing window of n-type silicon cells under full spectrum (300–1200 nm) illumination. In addition, thickness-varied a-Si:H contacts are studied for n-type silicon cells under the infrared spectrum (700–1200 nm) illumination, which are prepared for silicon-based tandem applications.
Second, the a-Si:H contacts are applied to commercial-grade p-type silicon cells, which have much lower bulk carrier lifetimes than the n-type silicon cells. The approach is using gettering and bulk hydrogenation to improve the p-type silicon bulk quality, and then applying a-Si:H contacts to enable excellent surface passivation and carrier transport. This leads to an open-circuit voltage of 707 mV in p-type Czochralski silicon cells, and of 702 mV, the world-record open-circuit voltage in p-type multi-crystalline silicon cells.
Finally, CdTe cells with p-type a-Si:H hole-selective contacts are studied. As a proof of concept, p-type a-Si:H contacts enable achieving the highest reported open-circuit voltages (1.1 V) in mono-crystalline CdTe devices. A comparative study of applying p-type a-Si:H contacts in poly-crystalline CdTe solar cells is performed, resulting in absolute voltage gain of 53 mV over using the standard tellurium contacts.
ContributorsShi, Jianwei (Author) / Holman, Zachary (Thesis advisor) / Bowden, Stuart (Committee member) / Bertoni, Mariana (Committee member) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2018
Description
Solar energy is leading in renewable energy sources and the aspects surrounding the efforts to harvest light are gaining importance. One such aspect is increasing the light absorption, where heliotropism comes into play. Heliotropism, the ability to track the sun across the sky, can be integrated with solar cells for more efficient photon collection and other optoelectronic systems. Inspired by plants, which optimize incident sunlight in nature, several researchers have made artificial heliotropic and phototropic systems. This project aims to design, synthesize and characterize a material system and evaluate its application in a phototropic system. A gold nanoparticle (Au NP) incorporated poly(N-isopropylacrylamide) (PNIPAAm) hydrogel was synthesized as a photo-thermo-responsive material in our phototropic system. The Au NPs generate heat from the incident via plasmonic resonance to induce a volume phase change of the thermo-responsive hydrogel PNIPAAm. PNIPAAm shrinks or swells at temperature above or below 32°C. Upon irradiation, the Au NP-PNIPAAm micropillar actuates, specifically bending toward the incident light and precisely following the varying incident angle.
Swelling ratio tests, bending angle tests with a static incident light and bending tests with varying angles were carried out on hydrogel samples with varying Au NP concentrations. Swelling ratios ranging from 1.45 to 2.9 were recorded for pure hydrogel samples and samples with very low Au NP concentrations. Swelling ratios of 2.41 and 3.37 were calculated for samples with low and high concentrations of Au NPs, respectively. A bending of up to 88° was observed in Au NP-hydrogel pillars with a low Au NP concentration with a 90° incident angle. The light tracking performance was assessed by the slope of the pillar Bending angle (response angle) vs. Incident light angle plot. A slope of 1 indicates ideal tracking with top of the pillar being normal to the incident light, maximizing the photon absorption. Slopes of 0.82 and 0.56 were observed for the low and high Au NP concentration samples. The rapid and precise incident light tracking of our system has shown the promise in phototropic applications.
Swelling ratio tests, bending angle tests with a static incident light and bending tests with varying angles were carried out on hydrogel samples with varying Au NP concentrations. Swelling ratios ranging from 1.45 to 2.9 were recorded for pure hydrogel samples and samples with very low Au NP concentrations. Swelling ratios of 2.41 and 3.37 were calculated for samples with low and high concentrations of Au NPs, respectively. A bending of up to 88° was observed in Au NP-hydrogel pillars with a low Au NP concentration with a 90° incident angle. The light tracking performance was assessed by the slope of the pillar Bending angle (response angle) vs. Incident light angle plot. A slope of 1 indicates ideal tracking with top of the pillar being normal to the incident light, maximizing the photon absorption. Slopes of 0.82 and 0.56 were observed for the low and high Au NP concentration samples. The rapid and precise incident light tracking of our system has shown the promise in phototropic applications.
ContributorsGopalakrishna, Hamsini (Author) / He, Ximin (Thesis advisor) / Holman, Zachary C (Committee member) / Wang, Liping (Committee member) / Arizona State University (Publisher)
Created2016
Description
Origami and Kirigami are two traditional art forms in the world. Origami, from
‘ori’ meaning folding, and ‘kami’ meaning paper is the art of paper folding. Kirigami, from ‘kiri’ meaning cutting, is the art of the combination of paper cutting and paper folding. In this dissertation, Origami and kirigami concepts were successively utilized in making stretchable lithium ion batteries and three-dimensional (3D) silicon structure which both provide excellent mechanical characteristics.
‘ori’ meaning folding, and ‘kami’ meaning paper is the art of paper folding. Kirigami, from ‘kiri’ meaning cutting, is the art of the combination of paper cutting and paper folding. In this dissertation, Origami and kirigami concepts were successively utilized in making stretchable lithium ion batteries and three-dimensional (3D) silicon structure which both provide excellent mechanical characteristics.
ContributorsSong, Zeming (Author) / Jiang, Hanqing (Thesis advisor) / Dai, Lenore (Committee member) / Yu, Hongbin (Committee member) / He, Ximin (Committee member) / Arizona State University (Publisher)
Created2016
Description
CdTe/MgxCd1-xTe double heterostructures (DHs) have been grown on lattice matched InSb (001) substrates using Molecular Beam Epitaxy. The MgxCd1-xTe layers, which have a wider bandgap and type-I band edge alignment with CdTe, provide sufficient carrier confinement to CdTe, so that the optical properties of CdTe can be studied. The DH samples show very strong Photoluminescence (PL) intensity, long carrier lifetimes (up to 3.6 μs) and low effective interface recombination velocity at the CdTe/MgxCd1 xTe heterointerface (~1 cm/s), indicating the high material quality. Indium has been attempted as an n-type dopant in CdTe and it is found that the carriers are 100% ionized in the doping range of 1×1016 cm-3 to 1×1018 cm-3. With decent doping levels, long minority carrier lifetime, and almost perfect surface passivation by the MgxCd1-xTe layer, the CdTe/MgxCd1-xTe DHs are applied to high efficiency CdTe solar cells. Monocrystalline CdTe solar cells with efficiency of 17.0% and a record breaking open circuit voltage of 1.096 V have been demonstrated in our group.
Mg0.13Cd0.87Te (1.7 eV), also with high material quality, has been proposed as a current matching cell to Si (1.1 eV) solar cells, which could potentially enable a tandem solar cell with high efficiency and thus lower the electricity cost. The properties of Mg0.13Cd0.87Te/Mg0.5Cd0.5Te DHs and solar cells have been investigated. Carrier lifetime as long as 0.56 μs is observed and a solar cell with 11.2% efficiency and open circuit voltage of 1.176 V is demonstrated.
The CdTe/MgxCd1-xTe DHs could also be potentially applied to luminescence refrigeration, which could be used in vibration-free space applications. Both external luminescence quantum efficiency and excitation-dependent PL measurement show that the best quality samples are almost 100% dominated by radiative recombination, and calculation shows that the internal quantum efficiency can be as high as 99.7% at the optimal injection level (1017 cm-3). External luminescence quantum efficiency of over 98% can be realized for luminescence refrigeration with the proper design of optical structures.
Mg0.13Cd0.87Te (1.7 eV), also with high material quality, has been proposed as a current matching cell to Si (1.1 eV) solar cells, which could potentially enable a tandem solar cell with high efficiency and thus lower the electricity cost. The properties of Mg0.13Cd0.87Te/Mg0.5Cd0.5Te DHs and solar cells have been investigated. Carrier lifetime as long as 0.56 μs is observed and a solar cell with 11.2% efficiency and open circuit voltage of 1.176 V is demonstrated.
The CdTe/MgxCd1-xTe DHs could also be potentially applied to luminescence refrigeration, which could be used in vibration-free space applications. Both external luminescence quantum efficiency and excitation-dependent PL measurement show that the best quality samples are almost 100% dominated by radiative recombination, and calculation shows that the internal quantum efficiency can be as high as 99.7% at the optimal injection level (1017 cm-3). External luminescence quantum efficiency of over 98% can be realized for luminescence refrigeration with the proper design of optical structures.
ContributorsZhao, Xinhao (Author) / Zhang, Yong-Hang (Thesis advisor) / Johnson, Shane (Committee member) / Holman, Zachary (Committee member) / Chowdhury, Srabanti (Committee member) / He, Ximin (Committee member) / Arizona State University (Publisher)
Created2016