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Description
For decades, microelectronics manufacturing has been concerned with failures related to electromigration phenomena in conductors experiencing high current densities. The influence of interconnect microstructure on device failures related to electromigration in BGA and flip chip solder interconnects has become a significant interest with reduced individual solder interconnect volumes. A survey

For decades, microelectronics manufacturing has been concerned with failures related to electromigration phenomena in conductors experiencing high current densities. The influence of interconnect microstructure on device failures related to electromigration in BGA and flip chip solder interconnects has become a significant interest with reduced individual solder interconnect volumes. A survey indicates that x-ray computed micro-tomography (µXCT) is an emerging, novel means for characterizing the microstructures' role in governing electromigration failures. This work details the design and construction of a lab-scale µXCT system to characterize electromigration in the Sn-0.7Cu lead-free solder system by leveraging in situ imaging.

In order to enhance the attenuation contrast observed in multi-phase material systems, a modeling approach has been developed to predict settings for the controllable imaging parameters which yield relatively high detection rates over the range of x-ray energies for which maximum attenuation contrast is expected in the polychromatic x-ray imaging system. In order to develop this predictive tool, a model has been constructed for the Bremsstrahlung spectrum of an x-ray tube, and calculations for the detector's efficiency over the relevant range of x-ray energies have been made, and the product of emitted and detected spectra has been used to calculate the effective x-ray imaging spectrum. An approach has also been established for filtering `zinger' noise in x-ray radiographs, which has proven problematic at high x-ray energies used for solder imaging. The performance of this filter has been compared with a known existing method and the results indicate a significant increase in the accuracy of zinger filtered radiographs.

The obtained results indicate the conception of a powerful means for the study of failure causing processes in solder systems used as interconnects in microelectronic packaging devices. These results include the volumetric quantification of parameters which are indicative of both electromigration tolerance of solders and the dominant mechanisms for atomic migration in response to current stressing. This work is aimed to further the community's understanding of failure-causing electromigration processes in industrially relevant material systems for microelectronic interconnect applications and to advance the capability of available characterization techniques for their interrogation.
ContributorsMertens, James Charles Edwin (Author) / Chawla, Nikhilesh (Thesis advisor) / Alford, Terry (Committee member) / Jiao, Yang (Committee member) / Neithalath, Narayanan (Committee member) / Arizona State University (Publisher)
Created2015
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Description
Group III-nitride semiconductors have wide application in optoelectronic devices. Spontaneous and piezoelectric polarization effects have been found to be critical for electric and optical properties of group III-nitrides. In this dissertation, firstly, the crystal orientation dependence of the polarization is calculated and in-plane polarization is revealed. The in-plane polarization is

Group III-nitride semiconductors have wide application in optoelectronic devices. Spontaneous and piezoelectric polarization effects have been found to be critical for electric and optical properties of group III-nitrides. In this dissertation, firstly, the crystal orientation dependence of the polarization is calculated and in-plane polarization is revealed. The in-plane polarization is sensitive to the lateral characteristic dimension determined by the microstructure. Specific semi-polar plane growth is suggested for reducing quantum-confined Stark effect. The macroscopic electrostatic field from the polarization discontinuity in the heterostructures is discussed, b ased on that, the band diagram of InGaN/GaN quantum well/barrier and AlGaN/GaN heterojunction is obtained from the self-consistent solution of Schrodinger and Poisson equations. New device design such as triangular quantum well with the quenched polarization field is proposed. Electron holography in the transmission electron microscopy is used to examine the electrostatic potential under polarization effects. The measured potential energy profiles of heterostructure are compared with the band simulation, and evidences of two-dimensional hole gas (2DHG) in a wurtzite AlGaN/ AlN/ GaN superlattice, as well as quasi two-dimensional electron gas (2DEG) in a zinc-blende AlGaN/GaN are found. The large polarization discontinuity of AlN/GaN is the main source of the 2DHG of wurtzite nitrides, while the impurity introduced during the growth of AlGaN layer provides the donor states that to a great extent balance the free electrons in zinc-blende nitrides. It is also found that the quasi-2DEG concentration in zinc-blende AlGaN/GaN is about one order of magnitude lower than the wurtzite AlGaN/GaN, due to the absence of polarization. Finally, the InAlN/GaN lattice-matched epitaxy, which ideally has a zero piezoelectric polarization and strong spontaneous polarization, is experimentally studied. The breakdown in compositional homogeneity is triggered by threading dislocations with a screw component propagating from the GaN underlayer, which tend to open up into V-grooves at a certain thickness of the InxAl1-xN layer. The V-grooves coalesce at 200 nm and are filled with material that exhibits a significant drop in indium content and a broad luminescence peak. The structural breakdown is due to heterogeneous nucleation and growth at the facets of the V-grooves.
ContributorsWei, Qiyuan (Author) / Ponce, Fernando A. (Thesis advisor) / Tsen, Kong-Thon (Committee member) / Shumway, John (Committee member) / Menéndez, Jose (Committee member) / Smith, David (Committee member) / Arizona State University (Publisher)
Created2012
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Description
III-nitride alloys are wide band gap semiconductors with a broad range of applications in optoelectronic devices such as light emitting diodes and laser diodes. Indium gallium nitride light emitting diodes have been successfully produced over the past decade. But the progress of green emission light emitting devices has been limited

III-nitride alloys are wide band gap semiconductors with a broad range of applications in optoelectronic devices such as light emitting diodes and laser diodes. Indium gallium nitride light emitting diodes have been successfully produced over the past decade. But the progress of green emission light emitting devices has been limited by the incorporation of indium in the alloy, mainly due to phase separation. This difficulty could be addressed by studying the growth and thermodynamics of these alloys. Knowledge of thermodynamic phase stabilities and of pressure - temperature - composition phase diagrams is important for an understanding of the boundary conditions of a variety of growth techniques. In this dissertation a study of the phase separation of indium gallium nitride is conducted using a regular solution model of the ternary alloy system. Graphs of Gibbs free energy of mixing were produced for a range of temperatures. Binodal and spinodal decomposition curves show the stable and unstable regions of the alloy in equilibrium. The growth of gallium nitride and indium gallium nitride was attempted by the reaction of molten gallium - indium alloy with ammonia at atmospheric pressure. Characterization by X-ray diffraction, photoluminescence, and secondary electron microscopy show that the samples produced by this method contain only gallium nitride in the hexagonal phase. The instability of indium nitride at the temperatures required for activation of ammonia accounts for these results. The photoluminescence spectra show a correlation between the intensity of a broad green emission, related to native defects, and indium composition used in the molten alloy. A different growth method was used to grow two columnar-structured gallium nitride films using ammonium chloride and gallium as reactants and nitrogen and ammonia as carrier gasses. Investigation by X-ray diffraction and spatially-resolved cathodoluminescence shows the film grown at higher temperature to be primarily hexagonal with small quantities of cubic crystallites, while the one grown at lower temperature to be pure hexagonal. This was also confirmed by low temperature photoluminescence measurements. The results presented here show that cubic and hexagonal crystallites can coexist, with the cubic phase having a much sharper and stronger luminescence. Controlled growth of the cubic phase GaN crystallites can be of use for high efficiency light detecting and emitting devices. The ammonolysis of a precursor was used to grow InGaN powders with different indium composition. High purity hexagonal GaN and InN were obtained. XRD spectra showed complete phase separation for samples with x < 30%, with ~ 9% indium incorporation in the 30% sample. The presence of InGaN in this sample was confirmed by PL measurements, where luminescence from both GaN and InGaN band edge are observed. The growth of higher indium compositions samples proved to be difficult, with only the presence of InN in the sample. Nonetheless, by controlling parameters like temperature and time may lead to successful growth of this III-nitride alloy by this method.
ContributorsHill, Arlinda (Author) / Ponce, Fernando A. (Thesis advisor) / Chamberlin, Ralph V (Committee member) / Sankey, Otto F (Committee member) / Smith, David J. (Committee member) / Tsen, Kong-Thon (Committee member) / Arizona State University (Publisher)
Created2011
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Description
Raman scattering from Ge-Si core-shell nanowires is investigated theoretically and experimentally. A theoretical model that makes it possible to extract quantitative strain information from the measured Raman spectra is presented for the first time. Geometrical and elastic simplifications are introduced to keep the model analytical, which facilitates comparison with experimental

Raman scattering from Ge-Si core-shell nanowires is investigated theoretically and experimentally. A theoretical model that makes it possible to extract quantitative strain information from the measured Raman spectra is presented for the first time. Geometrical and elastic simplifications are introduced to keep the model analytical, which facilitates comparison with experimental results. In particular, the nanowires are assumed to be cylindrical, and their elastic constants isotropic. The simple analytical model is subsequently validated by performing numerical calculations using realistic nanowire geometries and cubic, anisotropic elastic constants. The comparison confirms that the analytic model is an excellent approximation that greatly facilitates quantitative Raman work, with expected errors in the strain determination that do not exceed 10%. Experimental Raman spectra of a variety of core-shell nanowires are presented, and the strain in the nanowires is assessed using the models described above. It is found that all structures present a significant degree of strain relaxation relative to ideal, fully strained Ge-Si core-shell structures. The analytical models are modified to quantify this strain relaxation.
ContributorsSingh, Rachna (Author) / Menéndez, Jose (Thesis advisor) / Drucker, Jeffery (Committee member) / Ponce, Fernando (Committee member) / Tsen, Kong-Thon (Committee member) / Bennett, Peter (Committee member) / Arizona State University (Publisher)
Created2011
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Description
Aluminum alloys are ubiquitously used in almost all structural applications due to their high strength-to-weight ratio. Their superior mechanical performance can be attributed to complex dispersions of nanoscale intermetallic particles that precipitate out from the alloy’s solid solution and offer resistance to deformation. Although they have been extensively investigated in

Aluminum alloys are ubiquitously used in almost all structural applications due to their high strength-to-weight ratio. Their superior mechanical performance can be attributed to complex dispersions of nanoscale intermetallic particles that precipitate out from the alloy’s solid solution and offer resistance to deformation. Although they have been extensively investigated in the last century, the traditional approaches employed in the past haven’t rendered an authoritative microstructural understanding in such materials. The effect of the precipitates’ inherent complex morphology and their three-dimensional (3D) spatial distribution on evolution and deformation behavior have often been precluded. In this study, for the first time, synchrotron-based hard X-ray nano-tomography has been implemented in Al-Cu alloys to measure growth kinetics of different nanoscale phases in 3D and reveal mechanistic insights behind some of the observed novel phase transformation reactions occurring at high temperatures. The experimental results were reconciled with coarsening models from the LSW theory to an unprecedented extent, thereby establishing a new paradigm for thermodynamic analysis of precipitate assemblies. By using a unique correlative approach, a non-destructive means of estimating precipitation-strengthening in such alloys has been introduced. Limitations of using existing mechanical strengthening models in such alloys have been discussed and a means to quantify individual contributions from different strengthening mechanisms has been established.

The current rapid pace of technological progress necessitates the demand for more resilient and high-performance alloys. To achieve this, a thorough understanding of the relationships between material properties and its structure is indispensable. To establish this correlation and achieve desired properties from structural alloys, microstructural response to mechanical stimuli needs to be understood in three-dimensions (3D). To that effect, in situ tests were conducted at the synchrotron (Advanced Photon Source) using Transmission X-Ray Microscopy as well as in a scanning electron microscope (SEM) to study real-time damage evolution in such alloys. Findings of precipitate size-dependent transition in deformation behavior from these tests have inspired a novel resilient aluminum alloy design.
ContributorsKaira, Chandrashekara Shashank (Author) / Chawla, Nikhilesh (Thesis advisor) / Solanki, Kiran (Committee member) / Jiao, Yang (Committee member) / De Andrade, Vincent (Committee member) / Arizona State University (Publisher)
Created2017
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Description
In material science, microstructure plays a key role in determining properties, which further determine utility of the material. However, effectively measuring microstructure evolution in real time remains an challenge. To date, a wide range of advanced experimental techniques have been developed and applied to characterize material microstructure and structural evolution

In material science, microstructure plays a key role in determining properties, which further determine utility of the material. However, effectively measuring microstructure evolution in real time remains an challenge. To date, a wide range of advanced experimental techniques have been developed and applied to characterize material microstructure and structural evolution on different length and time scales. Most of these methods can only resolve 2D structural features within a narrow range of length scale and for a single or a series of snapshots. The currently available 3D microstructure characterization techniques are usually destructive and require slicing and polishing the samples each time a picture is taken. Simulation methods, on the other hand, are cheap, sample-free and versatile without the special necessity of taking care of the physical limitations, such as extreme temperature or pressure, which are prominent

issues for experimental methods. Yet the majority of simulation methods are limited to specific circumstances, for example, first principle computation can only handle several thousands of atoms, molecular dynamics can only efficiently simulate a few seconds of evolution of a system with several millions particles, and finite element method can only be used in continuous medium, etc. Such limitations make these individual methods far from satisfaction to simulate macroscopic processes that a material sample undergoes up to experimental level accuracy. Therefore, it is highly desirable to develop a framework that integrate different simulation schemes from various scales

to model complicated microstructure evolution and corresponding properties. Guided by such an objective, we have made our efforts towards incorporating a collection of simulation methods, including finite element method (FEM), cellular automata (CA), kinetic Monte Carlo (kMC), stochastic reconstruction method, Discrete Element Method (DEM), etc, to generate an integrated computational material engineering platform (ICMEP), which could enable us to effectively model microstructure evolution and use the simulated microstructure to do subsequent performance analysis. In this thesis, we will introduce some cases of building coupled modeling schemes and present

the preliminary results in solid-state sintering. For example, we use coupled DEM and kinetic Monte Carlo method to simulate solid state sintering, and use coupled FEM and cellular automata method to model microstrucutre evolution during selective laser sintering of titanium alloy. Current results indicate that joining models from different length and time scales is fruitful in terms of understanding and describing microstructure evolution of a macroscopic physical process from various perspectives.
ContributorsChen, Shaohua (Author) / Jiao, Yang (Thesis advisor) / Wang, Qinghua (Committee member) / Emady, Heather (Committee member) / Gel, Aytekin (Committee member) / Arizona State University (Publisher)
Created2018
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Description
Metal Organic Frameworks(MOFs) have been used in various applications, including

sensors. The unique crystalline structure of MOFs in addition to controllability of

their pore size and their intake selectivity makes them a promising method of detection.

Detection of metal ions in water using a binary mixture of luminescent MOFs

has been reported. 3 MOFs(ZrPDA,

Metal Organic Frameworks(MOFs) have been used in various applications, including

sensors. The unique crystalline structure of MOFs in addition to controllability of

their pore size and their intake selectivity makes them a promising method of detection.

Detection of metal ions in water using a binary mixture of luminescent MOFs

has been reported. 3 MOFs(ZrPDA, UiO-66 and UiO-66-NH2) as detectors and 4

metal ions(Pb2+, Ni2+, Ba2+ and Cu2+) as the target species were chosen based on

cost, water stability, application and end goals.

It is possible to detect metal ions such as Pb2+ at concentrations at low as 0.005

molar using MOFs. Also, based on the luminescence responses, a method of distinguishing

between similar metal ions has been proposed. It is shown that using a

mixture of MOFs with dierent reaction to metal ions can lead to unique and specic

3D luminescence maps, which can be used to identify the present metal ions in water

and their amount.

In addition to the response of a single MOF to addition of a single metal ion,

luminescence response of ZrPDA + UiO-66 mixture to increasing concentration of

each of 4 metal ions was studied, and summarized. A new peak is observed in the

mixture, that did not exist before, and it is proposed that this peak requires metal

ions to activate
ContributorsSirous, Peyman (Author) / Mu, Bin (Thesis advisor) / Alford, Terry (Thesis advisor) / Jiao, Yang (Committee member) / Arizona State University (Publisher)
Created2018
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Description
Interstitial impurity atoms can significantly alter the chemical and physical properties of the host material. Oxygen impurity in HCP titanium is known to have a considerable strengthening effect mainly through interactions with dislocations. To better understand such an effect, first the role of oxygen on various slip planes in titanium

Interstitial impurity atoms can significantly alter the chemical and physical properties of the host material. Oxygen impurity in HCP titanium is known to have a considerable strengthening effect mainly through interactions with dislocations. To better understand such an effect, first the role of oxygen on various slip planes in titanium is examined using generalized stacking fault energies (GSFE) computed by the first principles calculations. It is shown that oxygen can significantly increase the energy barrier to dislocation motion on most of the studied slip planes. Then the Peierls-Nabbaro model is utilized in conjunction with the GSFE to estimate the Peierls stress ratios for different slip systems. Using such information along with a set of tension and compression experiments, the parameters of a continuum scale crystal plasticity model, namely CRSS values, are calibrated. Effect of oxygen content on the macroscopic stress-strain response is further investigated through experiments on oxygen-boosted samples at room temperature. It is demonstrated that the crystal plasticity model can very well capture the effect of oxygen content on the global response of the samples. It is also revealed that oxygen promotes the slip activity on the pyramidal planes.

The effect of oxygen impurity on titanium is further investigated under high cycle fatigue loading. For that purpose, a two-step hierarchical crystal plasticity for fatigue predictions is presented. Fatigue indicator parameter is used as the main driving force in an energy-based crack nucleation model. To calculate the FIPs, high-resolution full-field crystal plasticity simulations are carried out using a spectral solver. A nucleation model is proposed and calibrated by the fatigue experimental data for notched titanium samples with different oxygen contents and under two load ratios. Overall, it is shown that the presented approach is capable of predicting the high cycle fatigue nucleation time. Moreover, qualitative predictions of microstructurally small crack growth rates are provided. The multi-scale methodology presented here can be extended to other material systems to facilitate a better understanding of the fundamental deformation mechanisms, and to effectively implement such knowledge in mesoscale-macroscale investigations.
ContributorsGholami Bazehhour, Benyamin (Author) / Solanki, Kiran N (Thesis advisor) / Liu, Yongming (Committee member) / Oswald, Jay J (Committee member) / Rajagopalan, Jagannathan (Committee member) / Jiao, Yang (Committee member) / Arizona State University (Publisher)
Created2018
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Description
Increasing density of microelectronic packages, results in an increase in thermal and mechanical stresses within the various layers of the package. To accommodate the high-performance demands, the materials used in the electronic package would also require improvement. Specifically, the damage that often occurs in solders that function as die-attachment and

Increasing density of microelectronic packages, results in an increase in thermal and mechanical stresses within the various layers of the package. To accommodate the high-performance demands, the materials used in the electronic package would also require improvement. Specifically, the damage that often occurs in solders that function as die-attachment and thermal interfaces need to be addressed. This work evaluates and characterizes thermo-mechanical damage in two material systems – Electroplated Tin and Sintered Nano-Silver solder.

Tin plated electrical contacts are prone to formation of single crystalline tin whiskers which can cause short circuiting. A mechanistic model of their formation, evolution and microstructural influence is still not fully understood. In this work, growth of mechanically induced tin whiskers/hillocks is studied using in situ Nano-indentation and Electron Backscatter Diffraction (EBSD). Electroplated tin was indented and monitored in vacuum to study growth of hillocks without the influence of atmosphere. Thermal aging was done to study the effect of intermetallic compounds. Grain orientation of the hillocks and the plastically deformed region surrounding the indent was studied using Focused Ion Beam (FIB) lift-out technique. In addition, micropillars were milled on the surface of electroplated Sn using FIB to evaluate the yield strength and its relation to Sn grain size.

High operating temperature power electronics use wide band-gap semiconductor devices (Silicon Carbide/Gallium Nitride). The operating temperature of these devices can exceed 250oC, preventing use of traditional Sn-solders as Thermal Interface materials (TIM). At high temperature, the thermomechanical stresses can severely degrade the reliability and life of the device. In this light, new non-destructive approach is needed to understand the damage mechanism when subjected to reliability tests such as thermal cycling. In this work, sintered nano-Silver was identified as a promising high temperature TIM. Sintered nano-Silver samples were fabricated and their shear strength was evaluated. Thermal cycling tests were conducted and damage evolution was characterized using a lab scale 3D X-ray system to periodically assess changes in the microstructure such as cracks, voids, and porosity in the TIM layer. The evolution of microstructure and the effect of cycling temperature during thermal cycling are discussed.
ContributorsLujan Regalado, Irene (Author) / Chawla, Nikhilesh (Thesis advisor) / Frear, Darrel (Committee member) / Rajagopalan, Jagannathan (Committee member) / Jiao, Yang (Committee member) / Arizona State University (Publisher)
Created2018
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Description
Fatigue is a degradation process of materials that would lead to failure when materials are subjected to cyclic loadings. During past centuries, various of approaches have been proposed and utilized to help researchers understand the underlying theories of fatigue behavior of materials, as well as design engineering structures so that

Fatigue is a degradation process of materials that would lead to failure when materials are subjected to cyclic loadings. During past centuries, various of approaches have been proposed and utilized to help researchers understand the underlying theories of fatigue behavior of materials, as well as design engineering structures so that catastrophic disasters that arise from fatigue failure could be avoided. The stress-life approach is the most classical way that academia applies to analyze fatigue data, which correlates the fatigue lifetime with stress amplitudes during cyclic loadings. Fracture mechanics approach is another well-established way, by which people regard the cyclic stress intensity factor as the driving force during fatigue crack nucleation and propagation, and numerous models (such as the well-known Paris’ law) are developed by researchers.

The significant drawback of currently widely-used fatigue analysis approaches, nevertheless, is that they are all cycle-based, limiting researchers from digging into sub-cycle regime and acquiring real-time fatigue behavior data. The missing of such data further impedes academia from validating hypotheses that are related to real-time observations of fatigue crack nucleation and growth, thus the existence of various phenomena, such as crack closure, remains controversial.

In this thesis, both classical stress-life approach and fracture-mechanics-based approach are utilized to study the fatigue behavior of alloys. Distinctive material characterization instruments are harnessed to help collect and interpret key data during fatigue crack growth. Specifically, an investigation on the sub-cycle fatigue crack growth behavior is enabled by in-situ SEM mechanical testing, and a non-uniform growth mechanism within one loading cycle is confirmed by direct observation as well as image interpretation. Predictions based on proposed experimental procedure and observations show good match with cycle-based data from references, which indicates the credibility of proposed methodology and model, as well as their capability of being applied to a wide range of materials.
ContributorsLiu, Siying (Author) / Liu, Yongming (Thesis advisor) / Jiao, Yang (Committee member) / Nian, Qiong (Committee member) / Arizona State University (Publisher)
Created2018