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Mechanical behavior of metallic thin films at room temperature (RT) is relatively well characterized. However, measuring the high temperature mechanical properties of thin films poses several challenges. These include ensuring uniformity in sample temperature and minimizing temporal fluctuations due to ambient heat loss, in addition to difficulties involved in mechanical

Mechanical behavior of metallic thin films at room temperature (RT) is relatively well characterized. However, measuring the high temperature mechanical properties of thin films poses several challenges. These include ensuring uniformity in sample temperature and minimizing temporal fluctuations due to ambient heat loss, in addition to difficulties involved in mechanical testing of microscale samples. To address these issues, we designed and analyzed a MEMS-based high temperature tensile testing stage made from single crystal silicon. The freestanding thin film specimens were co-fabricated with the stage to ensure uniaxial loading. Multi-physics simulations of Joule heating, incorporating both radiation and convection heat transfer, were carried out using COMSOL to map the temperature distribution across the stage and the specimen. The simulations were validated using temperature measurements from a thermoreflectance microscope.
ContributorsEswarappa Prameela, Suhas (Author) / Rajagopalan, Jagannathan (Thesis advisor) / Wang, Liping (Committee member) / Jiao, Yang (Committee member) / Arizona State University (Publisher)
Created2016
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Description
Electromigration (EM) has been a serious reliability concern in microelectronics packaging for close to half a century now. Whenever the challenges of EM are overcome newer complications arise such as the demand for better performance due to increased miniaturization of semiconductor devices or the problems faced due to undesirable properties

Electromigration (EM) has been a serious reliability concern in microelectronics packaging for close to half a century now. Whenever the challenges of EM are overcome newer complications arise such as the demand for better performance due to increased miniaturization of semiconductor devices or the problems faced due to undesirable properties of lead-free solders. The motivation for the work is that there exists no fully computational modeling study on EM damage in lead-free solders (and also in lead-based solders). Modeling techniques such as one developed here can give new insights on effects of different grain features and offer high flexibility in varying parameters and study the corresponding effects. In this work, a new computational approach has been developed to study void nucleation and initial void growth in solders due to metal atom diffusion. It involves the creation of a 3D stochastic mesoscale model of the microstructure of a polycrystalline Tin structure. The next step was to identify regions of current crowding or ‘hot-spots’. This was done through solving a finite difference scheme on top of the 3D structure. The nucleation of voids due to atomic diffusion from the regions of current crowding was modeled by diffusion from the identified hot-spot through a rejection free kinetic Monte-Carlo scheme. This resulted in the net movement of atoms from the cathode to the anode. The above steps of identifying the hotspot and diffusing the atoms at the hot-spot were repeated and this lead to the initial growth of the void. This procedure was studied varying different grain parameters. In the future, the goal is to explore the effect of more grain parameters and consider other mechanisms of failure such as the formation of intermetallic compounds due to interstitial diffusion and dissolution of underbump metallurgy.
ContributorsKarunakaran, Deepak (Thesis advisor) / Jiao, Yang (Committee member) / Chawla, Nikhilesh (Committee member) / Rajagopalan, Jagannathan (Committee member) / Arizona State University (Publisher)
Created2016
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Description
Nanocrystalline (NC) and Ultrafine-grained (UFG) metal films exhibit a wide range of enhanced mechanical properties compared to their coarse-grained counterparts. These properties, such as very high strength, primarily arise from the change in the underlying deformation mechanisms. Experimental and simulation studies have shown that because of the small grain size,

Nanocrystalline (NC) and Ultrafine-grained (UFG) metal films exhibit a wide range of enhanced mechanical properties compared to their coarse-grained counterparts. These properties, such as very high strength, primarily arise from the change in the underlying deformation mechanisms. Experimental and simulation studies have shown that because of the small grain size, conventional dislocation plasticity is curtailed in these materials and grain boundary mediated mechanisms become more important. Although the deformation behavior and the underlying mechanisms in these materials have been investigated in depth, relatively little attention has been focused on the inhomogeneous nature of their microstructure (particularly originating from the texture of the film) and its influence on their macroscopic response. Furthermore, the rate dependency of mechanical response in NC/UFG metal films with different textures has not been systematically investigated. The objectives of this dissertation are two-fold.

The first objective is to carry out a systematic investigation of the mechanical behavior of NC/UFG thin films with different textures under different loading rates. This includes a novel approach to study the effect of texture-induced plastic anisotropy on mechanical behavior of the films. Efforts are made to correlate the behavior of UFG metal films and the underlying deformation mechanisms. The second objective is to understand the deformation mechanisms of UFG aluminum films using in-situ transmission electron microscopy (TEM) experiments with Automated Crystal Orientation Mapping. This technique enables us to investigate grain rotations in UFG Al films and to monitor the microstructural changes in these films during deformation, thereby revealing detailed information about the deformation mechanisms prevalent in UFG metal films.
ContributorsIzadi, Ehsan (Author) / Rajagopalan, Jagannathan (Thesis advisor) / Peralta, Pedro (Committee member) / Chawla, Nikhilesh (Committee member) / Solanki, Kiran (Committee member) / Oswald, Jay (Committee member) / Arizona State University (Publisher)
Created2017
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Description
The Very High Temperature Reactor (VHTR) is one of six conceptual designs proposed for Generation IV nuclear reactors. Alloy 617, a solid solution strengthened Ni-base superalloy, is currently the primary candidate material for the tubing of the Intermediate Heat Exchanger (IHX) in the VHTR design. Steady-state operation of the nuclear

The Very High Temperature Reactor (VHTR) is one of six conceptual designs proposed for Generation IV nuclear reactors. Alloy 617, a solid solution strengthened Ni-base superalloy, is currently the primary candidate material for the tubing of the Intermediate Heat Exchanger (IHX) in the VHTR design. Steady-state operation of the nuclear power plant at elevated temperatures leads to creep deformation, whereas loading transients including startup and shutdown generate fatigue. A detailed understanding of the creep-fatigue interaction in Alloy 617 is necessary before it can be considered as a material for nuclear construction in ASME Boiler and Pressure Vessel Code. Current design codes for components undergoing creep-fatigue interaction at elevated temperatures require creep-fatigue testing data covering the entire range from fatigue-dominant to creep-dominant loading. Classical strain-controlled tests, which produce stress relaxation during the hold period, show a saturation in cycle life with increasing hold periods due to the rapid stress-relaxation of Alloy 617 at high temperatures. Therefore, applying longer hold time in these tests cannot generate creep-dominated failure. In this study, uniaxial isothermal creep-fatigue tests with non-traditional loading waveforms were designed and performed at 850 and 950°C, with an objective of generating test data in the creep-dominant regime. The new loading waveforms are hybrid strain-controlled and force-controlled testing which avoid stress relaxation during the creep hold. The experimental data showed varying proportions of creep and fatigue damage, and provided evidence for the inadequacy of the widely-used time fraction rule for estimating creep damage under creep-fatigue conditions. Micro-scale damage features in failed test specimens, such as fatigue cracks and creep voids, were quantified using a Scanning Electron Microscope (SEM) to find a correlation between creep and fatigue damage. Quantitative statistical imaging analysis showed that the microstructural damage features (cracks and voids) are correlated with a new mechanical driving force parameter. The results from this image-based damage analysis were used to develop a phenomenological life-prediction methodology called the effective time fraction approach. Finally, the constitutive creep-fatigue response of the material at 950°C was modeled using a unified viscoplastic model coupled with a damage accumulation model. The simulation results were used to validate an energy-based constitutive life-prediction model, as a mechanistic model for potential component and structure level creep-fatigue analysis.
ContributorsTahir, Fraaz (Author) / Liu, Yongming (Thesis advisor) / Jiang, Hanqing (Committee member) / Rajagopalan, Jagannathan (Committee member) / Oswald, Jay (Committee member) / Jiao, Yang (Committee member) / Arizona State University (Publisher)
Created2017
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Description
Sn and Al alloys are widely used in various industries. Environmental-induced damage resulting in whiskering in Sn and corrosion in Al account for numerous failures globally every year. Therefore, for designing materials that can better withstand these failures, a comprehensive study on the characterization of the damage is necessary. This

Sn and Al alloys are widely used in various industries. Environmental-induced damage resulting in whiskering in Sn and corrosion in Al account for numerous failures globally every year. Therefore, for designing materials that can better withstand these failures, a comprehensive study on the characterization of the damage is necessary. This research implements advanced characterization techniques to study the above-mentioned environmental-induced damage in Sn and Al alloys.

Tin based films are known to be susceptible to whisker growth resulting in numerous failures. While the mechanisms and factors affecting whisker growth have been studied extensively, not much has been reported on the mechanical properties of tin whiskers themselves. This study focuses on the tensile behavior of tin whiskers. Tensile tests of whiskers were conducted in situ a dual beam focused ion beam (FIB) with a scanning electron microscope (SEM) using a micro electro-mechanical system (MEMS) tensile testing stage. The deformation mechanisms of whiskers were analyzed using transmission electron microscopy (TEM).

Due to the heterogenous nature of the microstructure of Al 7075, it is susceptible to corrosion forming corrosion products and pits. These can be sites for cracks nucleation and propagation resulting in stress corrosion cracking (SCC). Therefore, complete understanding of the corrosion damaged region and its effect on the strength of the alloy is necessary. Several studies have been performed to visualize pits and understand their effect on the mechanical performance of Al alloys using two-dimensional (2D) approaches which are often inadequate. To get a thorough understanding of the pits, it is necessary for three-dimensional (3D) studies. In this study, Al 7075 alloys were corroded in 3.5 wt.% NaCl solution and X-ray tomography was used to obtain the 3D microstructure of pits enabling the quantification of their dimensions accurately. Furthermore, microstructure and mechanical property correlations helped in a better understanding of the effect of corrosion. Apart from the pits, a surface corrosion layer also forms on Al. A subsurface damage layer has also been identified that forms due to the aggressive nature of NaCl. Energy dispersive X-ray spectroscopy (EDX) and nanoindentation helped in identifying this region and understanding the variation in properties.
ContributorsVallabhaneni, Venkata Sathya Sai Renuka (Author) / Chawla, Nikhilesh (Thesis advisor) / Rajagopalan, Jagannathan (Committee member) / Solanki, Kiran (Committee member) / Arizona State University (Publisher)
Created2017
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Description
Modern semiconductor technologies have been dominated by group-IV materials and III-V analogues. The development of hybrid derivatives combining appropriate members of these systems has been of interest for the purpose of extending the optoelectronic capabilities of the state-of-the-art. Early work on pseudo-binary (III-V)-IV alloys, described with the general formula (III-V)1-x(IV2)x,

Modern semiconductor technologies have been dominated by group-IV materials and III-V analogues. The development of hybrid derivatives combining appropriate members of these systems has been of interest for the purpose of extending the optoelectronic capabilities of the state-of-the-art. Early work on pseudo-binary (III-V)-IV alloys, described with the general formula (III-V)1-x(IV2)x,

showed limited progress due to phase segregation, auto-doping and compositional inhomogeneities. Recently, new techniques were introduced for synthesizing new classes of (III-V)-IV hybrid materials using reactions of V(IVH3)3 molecules [V = N, P, As and IV = Si, Ge] with group-III elements (B, Al, Ga, In). The reactions produce (III-V)-IV3 building blocks that interlink to form diamond-like

frameworks in which the III-V pairs incorporate as isolated units within the group-IV lattice. This approach not only precludes phase segregation, but also provides access to structures and compositions unattainable by conventional means. Entire new families of crystalline (III-V)-IV3 and (III-V)y(IV)5-y alloys with tunable IV-rich compositions, different from conventional (III-V)1-x(IV2)x systems, have been grown on Si(100) and GaP(100) wafers as well as Si1-xGex and Ge buffer layers which, in most cases, provide lattice matched templates for Si integration.

In this work, materials in the In-P-Ge, Ga-As-Ge and Ga-P-Si systems that would exhibit direct-gap behavior were targeted. A series of (InP)yGe5-2y alloys with tunable Ge contents above 60% were synthesized by reactions of P(GeH3)3 and indium atoms and were studied for bonding, structure, and optical response. (GaAs)yGe5-2y analogues were also grown and exhibited strong photoluminescence for applications in mid-IR photonics. The GaPSi3 alloy and Si-rich derivatives were produced via reactions of P(SiH3)3 and [H2GaNMe2]2 and exhibit enhanced absorption in the visible range. Quaternary analogues in the Al1-xBxPSi3 system were grown on Si via reactions of Al(BH4)3 and P(SiH3)3 leading to the formation crystalline materials with extended absorption relative to Si. This makes them imminently suitable for applications in Si-based photovoltaics. The work emphasized use of quantum-chemical simulations to elucidate structural, thermodynamic, and mechanical properties of the synthesized systems. The theory also included simulations of new synthetic targets such as BNC3, BNSi3, BPC3, and BPSi3 with interesting mechanical properties and strong covalent bonding.
ContributorsSims, Patrick Edward (Author) / Kouvetakis, John (Thesis advisor) / Chizmeshya, Andrew V. G. (Committee member) / Menéndez, Jose (Committee member) / Arizona State University (Publisher)
Created2017
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Description
Over the past several years, the density of integrated circuits has been increasing at a very fast rate, following Moore’s law. The advent of three dimensional (3D) packaging technologies enable the increase in density of integrated circuits without necessarily shrinking the dimensions of the device. Under such constraints, the solder

Over the past several years, the density of integrated circuits has been increasing at a very fast rate, following Moore’s law. The advent of three dimensional (3D) packaging technologies enable the increase in density of integrated circuits without necessarily shrinking the dimensions of the device. Under such constraints, the solder volume necessary to join the various layers of the package is also extremely small. At smaller length scales, the local cooling rates are higher, so the microstructures are much finer than that obtained in larger joints (BGA, C4). The fraction of intermetallic compounds (IMCs) present in solder joints in these volumes will be larger. The Cu6Sn5 precipitate size and spacing, and Sn grain structure and crystallography will be different at very small volumes. These factors will most certainly affect the performance of the solder. Examining the mechanical behavior and reliability of Pb-free solders is difficult, primarily because a methodology to characterize the microstructure and the mechanics of deformation at these extremely small length scales has yet to be developed.

In this study, Sn grain orientation and Cu6Sn5 IMC fraction, size, and morphology are characterized in 3D, in pure Sn based solder joints. The obtained results show differences in morphology of Sn grains and IMC precipitates as a function of location within the solder joint indicating influence of local cooling rate differences. Ex situ and in situ electromigration tests done on 250 um and 500 um pure Sn solder joints elucidate the evolution of microstructure, specifically Sn grain growth, IMC segregation and surface degradation. This research implements 3D quantification of microstructural features over micro and nano-scales, thereby enabling a multi-scale / multi-characterization approach.
ContributorsKirubanandham, Antony (Author) / Chawla, Nikhilesh (Thesis advisor) / Jiao, Yang (Committee member) / Lu, Minhua (Committee member) / Rajagopalan, Jagannathan (Committee member) / Arizona State University (Publisher)
Created2016
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Description
As the world energy demand increases, semiconductor devices with high energy conversion efficiency become more and more desirable. The energy conversion consists of two distinct processes, namely energy generation and usage. In this dissertation, novel multi-junction solar cells and light emitting diodes (LEDs) are proposed and studied for

As the world energy demand increases, semiconductor devices with high energy conversion efficiency become more and more desirable. The energy conversion consists of two distinct processes, namely energy generation and usage. In this dissertation, novel multi-junction solar cells and light emitting diodes (LEDs) are proposed and studied for high energy conversion efficiency in both processes, respectively. The first half of this dissertation discusses the practically achievable energy conversion efficiency limit of solar cells. Since the demonstration of the Si solar cell in 1954, the performance of solar cells has been improved tremendously and recently reached 41.6% energy conversion efficiency. However, it seems rather challenging to further increase the solar cell efficiency. The state-of-the-art triple junction solar cells are analyzed to help understand the limiting factors. To address these issues, the monolithically integrated II-VI and III-V material system is proposed for solar cell applications. This material system covers the entire solar spectrum with a continuous selection of energy bandgaps and can be grown lattice matched on a GaSb substrate. Moreover, six four-junction solar cells are designed for AM0 and AM1.5D solar spectra based on this material system, and new design rules are proposed. The achievable conversion efficiencies for these designs are calculated using the commercial software package Silvaco with real material parameters. The second half of this dissertation studies the semiconductor luminescence refrigeration, which corresponds to over 100% energy usage efficiency. Although cooling has been realized in rare-earth doped glass by laser pumping, semiconductor based cooling is yet to be realized. In this work, a device structure that monolithically integrates a GaAs hemisphere with an InGaAs/GaAs quantum-well thin slab LED is proposed to realize cooling in semiconductor. The device electrical and optical performance is calculated. The proposed device then is fabricated using nine times photolithography and eight masks. The critical process steps, such as photoresist reflow and dry etch, are simulated to insure successful processing. Optical testing is done with the devices at various laser injection levels and the internal quantum efficiency, external quantum efficiency and extraction efficiency are measured.
ContributorsWu, Songnan (Author) / Zhang, Yong-Hang (Thesis advisor) / Menéndez, Jose (Committee member) / Ponce, Fernando (Committee member) / Belitsky, Andrei (Committee member) / Schroder, Dieter (Committee member) / Arizona State University (Publisher)
Created2010
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Description
The increasing demand for structural materials with superior mechanical properties has provided a strong impetus to the discovery of novel materials, and innovations in processing techniques to improve the properties of existing materials. Methods like severe plastic deformation (SPD) and surface mechanical attrition treatment (SMAT) have led to significant enhancement

The increasing demand for structural materials with superior mechanical properties has provided a strong impetus to the discovery of novel materials, and innovations in processing techniques to improve the properties of existing materials. Methods like severe plastic deformation (SPD) and surface mechanical attrition treatment (SMAT) have led to significant enhancement in the strength of traditional structural materials like Al and Fe based alloys via microstructural refinement. However, the nanocrystalline materials produced using these techniques exhibit poor ductility due to the lack of effective strain hardening mechanisms, and as a result the well-known strength-ductility trade-off persists. To overcome this trade-off, researchers have proposed the concept of heterostructured materials, which are composed of domains ranging in size from a few nanometers to several micrometers. Over the last two decades, there has been intense research on the development of new methods to synthesize heterostructured materials. However, none of these methods is capable of providing precise control over key microstructural parameters such as average grain size, grain morphology, and volume fraction and connectivity of coarse and fine grains. Due to the lack of microstructural control, the relationship between these parameters and the deformation behavior of heterostructured materials cannot be investigated systematically, and hence designing heterostructured materials with optimized properties is currently infeasible. This work aims to address this scientific and technological challenge and is composed of two distinct but interrelated parts. The first part concerns the development of a broadly applicable synthesis method to produce heterostructured metallic films with precisely defined architectures. This method exploits two forms of film growth (epitaxial and Volmer-Weber) to generate heterostructured metallic films. The second part investigates the effect of different microstructural parameters on the deformation behavior of heterostructured metallic films with the aim of elucidating their structure-property relationships. Towards this end, freestanding heterostructured Fe films with different architectures were fabricated and uniaxially deformed using MEMS stages. The results from these experiments are presented and their implications for the mechanical properties of heterostructured materials is discussed.
ContributorsBerlia, Rohit (Author) / Rajagopalan, Jagannathan (Thesis advisor) / Sieradzki, Karl (Committee member) / Peralta, Pedro (Committee member) / Crozier, Peter (Committee member) / Solanki, Kiran (Committee member) / Arizona State University (Publisher)
Created2021
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Description
Achieving a viable process for advanced manufacturing of ceramics and metal-ceramic composites is a sought-after goal in a wide range of fields including electronics and sensors for harsh environments, microelectromechanical devices, energy storage materials, and structural materials, among others. In this dissertation, the processing, and manufacturing of ceramics and ceramic

Achieving a viable process for advanced manufacturing of ceramics and metal-ceramic composites is a sought-after goal in a wide range of fields including electronics and sensors for harsh environments, microelectromechanical devices, energy storage materials, and structural materials, among others. In this dissertation, the processing, and manufacturing of ceramics and ceramic composites are addressed, specifically, a process for three-dimensional (3D) printing of polymer-derived ceramics (PDC), and a process for low-cost manufacturing as well as healing of metal-ceramic composites is demonstrated.Three-dimensional printing of ceramics is enabled by dispensing the preceramic polymer at the tip of a moving nozzle into a gel that can reversibly switch between fluid and solid states, and subsequently thermally cross-linking the entire printed part “at once” while still inside the same gel was demonstrated. The solid gel converts to fluid at the tip of the moving nozzle, allowing the polymer solution to be dispensed and quickly returns to a solid state to maintain the geometry of the printed polymer both during printing and the subsequent high-temperature (160 °C) cross-linking. After retrieving the cross-linked part from the gel, the green body is converted to ceramic by high-temperature pyrolysis. This scalable process opens new opportunities for low-cost and high-speed production of complex three-dimensional ceramic parts and will be widely used for high-temperature and corrosive environment applications, including electronics and sensors, microelectromechanical systems, energy, and structural applications. Metal-ceramic composites are technologically significant as structural and functional materials and are among the most expensive materials to manufacture and repair. Hence, technologies for self-healing metal-ceramic composites are important. Here, a concept to fabricate and heal co-continuous metal-ceramic composites at room temperature were demonstrated. The composites were fabricated by infiltration of metal (here Copper) into a porous alumina preform (fabricated by freeze-casting) through electroplating; a low-temperature and low-cost process for the fabrication of such composites. Additionally, the same electroplating process was demonstrated for healing damages such as grooves and cracks in the original composite, such that the healed composite recovered its strength by more than 80%. Such technology may be expanded toward fully autonomous self-healing structures.
ContributorsMahmoudi, Mohammadreza (Author) / Minary-Jolandan, Majid (Thesis advisor) / Rajagopalan, Jagannathan (Committee member) / Cramer, Corson (Committee member) / Kang, Wonmo (Committee member) / Bhate, Dhruv (Committee member) / Arizona State University (Publisher)
Created2022