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Description
III-Nitride nanostructures have been an active area of research recently due to their ability to tune their optoelectronic properties. Thus far work has been done on InGaN quantum dots, nanowires, nanopillars, amongst other structures, but this research reports the creation of a new type of InGaN nanostructure, nanorings. Hexagonal InGaN

III-Nitride nanostructures have been an active area of research recently due to their ability to tune their optoelectronic properties. Thus far work has been done on InGaN quantum dots, nanowires, nanopillars, amongst other structures, but this research reports the creation of a new type of InGaN nanostructure, nanorings. Hexagonal InGaN nanorings were formed using Metal Organic Chemical Vapor Deposition through droplet epitaxy. The nanorings were thoroughly analyzed using x-ray diffraction, photoluminescence, electron microscopy, electron diffraction, and atomic force microscopy. Nanorings with high indium incorporation were achieved with indium content up to 50% that was then controlled using the growth time, temperature, In/Ga ratio and III/N ratio. The analysis showed that the nanoring shape is able to incorporate more indium than other nanostructures, due to the relaxing mechanism involved in the formation of the nanoring. The ideal conditions were determined to be growth of 30 second droplets with a growth time of 1 minute 30 seconds at 770 C to achieve the most well developed rings with the highest indium concentration.
ContributorsZaidi, Zohair (Author) / Mahajan, Subhash (Thesis advisor) / O'Connell, Michael J (Committee member) / Krause, Stephen (Committee member) / Arizona State University (Publisher)
Created2012
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Description
The goal of this research was to reduce dislocations and strain in high indium content bulk InGaN to improve quality for optical devices. In an attempt to achieve this goal, InGaN pillars were grown with compositions that matched the composition of the bulk InGaN grown on top. Pillar height and

The goal of this research was to reduce dislocations and strain in high indium content bulk InGaN to improve quality for optical devices. In an attempt to achieve this goal, InGaN pillars were grown with compositions that matched the composition of the bulk InGaN grown on top. Pillar height and density were optimized to facilitate coalescence on top of the pillars. It was expected that dislocations within the pillars would bend to side facets, thereby reducing the dislocation density in the bulk overgrowth, however this was not observed. It was also expected that pillars would be completely relaxed at the interface with the substrate. It was shown that pillars are mostly relaxed, but not completely. Mechanisms are proposed to explain why threading dislocations did not bend and how complete relaxation may have been achieved by mechanisms outside of interfacial misfit dislocation formation. Phase separation was not observed by TEM but may be related to the limitations of the sample or measurements. High indium observed at facets and stacking faults could be related to the extra photoluminescence peaks measured. This research focused on the InGaN pillars and first stages of coalescence on top of the pillars, saving bulk growth and device optimization for future research.
ContributorsMcFelea, Heather Dale (Author) / Mahajan, Subhash (Thesis advisor) / Arena, Chantal (Committee member) / Carpenter, Ray (Committee member) / Arizona State University (Publisher)
Created2011
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Description
With increasing concerns of the intrinsic toxicity of lead (Pb) in electronics, a series of tin (Sn) based alloys involving silver (Ag) and copper (Cu) have been proposed as replacements for Pb-Sn solder and widely accepted by industry. However, they have a higher melting point and often exhibit poorer damage

With increasing concerns of the intrinsic toxicity of lead (Pb) in electronics, a series of tin (Sn) based alloys involving silver (Ag) and copper (Cu) have been proposed as replacements for Pb-Sn solder and widely accepted by industry. However, they have a higher melting point and often exhibit poorer damage tolerance than Pb-Sn alloys. Recently, a new class of alloys with trace amount of rare-earth (RE) elements has been discovered and investigated. In previous work from Prof. Chawla's group, it has been shown that cerium (Ce)-based Pb-free solder are less prone to oxidation and Sn whiskering, and exhibit desirable attributes of microstructural refinement and enhanced ductility relative to lanthanum (La)-based Sn-3.9Ag-0.7Cu (SAC) alloy. Although the formation of RESn3 was believed to be directly responsible for the enhanced ductility in RE-containing SAC solder by allowing microscopic voids to nucleate throughout the solder volume, this cavitation-based mechanism needs to be validated experimentally and numerically. Additionally, since the previous study has exhibited the realistic feasibility of Ce-based SAC lead-free solder alloy as a replacement to conventional SAC alloys, in this study, the proposed objective focuses on the in in-depth understanding of mechanism of enhanced ductility in Ce-based SAC alloy and possible issues associated with integration of this new class of solder into electronic industry, including: (a) study of long-term thermal and mechanical stability on industrial metallization, (b) examine the role of solder volume and wetting behavior of the new solder, relative to Sn-3.9Ag-0.7Cu alloys, (c) conduct experiments of new solder alloys in the form of mechanical shock and electromigration. The research of this new class alloys will be conducted in industrially relevant conditions, and the results would serve as the first step toward integration of these new, next generation solders into the industry.
ContributorsXie, Huxiao (Author) / Chawla, Nikhilesh (Thesis advisor) / Krause, Stephen (Committee member) / Solanki, Kiran (Committee member) / Mirpuri, Kabir (Committee member) / Arizona State University (Publisher)
Created2012
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Description
Owing to their special characteristics, group III-Nitride semiconductors have attracted special attention for their application in a wide range of optoelectronic devices. Of particular interest are their direct and wide band gaps that span from ultraviolet to the infrared wavelengths. In addition, their stronger bonds relative to the other compound

Owing to their special characteristics, group III-Nitride semiconductors have attracted special attention for their application in a wide range of optoelectronic devices. Of particular interest are their direct and wide band gaps that span from ultraviolet to the infrared wavelengths. In addition, their stronger bonds relative to the other compound semiconductors makes them thermally more stable, which provides devices with longer life time. However, the lattice mismatch between these semiconductors and their substrates cause the as-grown films to have high dislocation densities, reducing the life time of devices that contain these materials. One possible solution for this problem is to substitute single crystal semiconductor nanowires for epitaxial films. Due to their dimensionality, semiconductor nanowires typically have stress-free surfaces and better physical properties. In order to employ semiconductor nanowires as building blocks for nanoscale devices, a precise control of the nanowires' crystallinity, morphology, and chemistry is necessary. This control can be achieved by first developing a deeper understanding of the processes involved in the synthesis of nanowires, and then by determining the effects of temperature and pressure on their growth. This dissertation focuses on understanding of the growth processes involved in the formation of GaN nanowires. Nucleation and growth events were observed in situ and controlled in real-time using an environmental transmission electron microscope. These observations provide a satisfactory elucidation of the underlying growth mechanism during the formation of GaN nanowires. Nucleation of these nanowires appears to follow the vapor-liquid-solid mechanism. However, nanowire growth is found to follow both the vapor-liquid-solid and vapor-solid-solid mechanisms. Direct evidence of the effects of III/V ratio on nanowire growth is also reported, which provides important information for tailoring the synthesis of GaN nanowires. These findings suggest in situ electron microscopy is a powerful tool to understand the growth of GaN nanowires and also that these experimental approach can be extended to study other binary semiconductor compound such as GaP, GaAs, and InP, or even ternary compounds such as InGaN. However, further experimental work is required to fully elucidate the kinetic effects on the growth process. A better control of the growth parameters is also recommended.
ContributorsDíaz Rivas, Rosa Estela (Author) / Mahajan, Subhash (Thesis advisor) / Petuskey, William (Committee member) / Crozier, Peter (Committee member) / Arizona State University (Publisher)
Created2010
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Description
This thesis presents a study of Boron Nitride (BN) and Copper (Cu)/BN multilayer thin films in terms of synthesis, chemical, structural, morphological, and mechanical properties characterization. In this study, the influence of Ar/N₂ flow rate in synthesizing stoichiometric BN thin films via magnetron sputtering was investigated initially. Post magnetron

This thesis presents a study of Boron Nitride (BN) and Copper (Cu)/BN multilayer thin films in terms of synthesis, chemical, structural, morphological, and mechanical properties characterization. In this study, the influence of Ar/N₂ flow rate in synthesizing stoichiometric BN thin films via magnetron sputtering was investigated initially. Post magnetron sputtering, the crystalline nature and B:N stoichiometric ratio of deposited thin films were investigated by X-ray diffraction (XRD) and X-ray Photoelectron Spectroscopy (XPS) respectively. Thicknesses revealed by ellipsometry analysis for nearly stoichiometric B:N thin films and their corresponding deposition times were used for estimating BN interlayer deposition times during the deposition of Cu/BN multilayer thin films. To characterize the microstructure of the synthesized Cu/BN multilayer thin films, XRD and scanning electron microscopy (SEM) have been used. Finally, a comparison of nanoindentation measurements on pure Cu and Cu/BN multilayer thin films having different number of BN interlayers were used for studying the influence of BN interlayers on improving mechanical properties such as hardness and elastic modulus. The results show that the stoichiometry of BN thin films is dependent on the Ar/N₂ flow rate during magnetron sputtering. An optimal Ar/N₂ flow rate of 13:5 during deposition was required to achieve an approximately 1:1 B:N stoichiometry. Grazing incidence and powder XRD analysis on these stoichiometric BN thin films deposited at room temperature did not reveal a phase match when compared to hexagonal boron nitride (h-BN) and cubic boron nitride (c-BN) reference XRD patterns. For a BN thin film deposition time of 5 hours, a thickness of approximately 40 nm was achieved, as revealed by ellipsometry. XRD and microstructure analysis using scanning electron microscopy (SEM) on pure Cu and Cu/BN thin films showed that the Cu grain size in Cu/BN thin films is much finer than pure Cu thin films. Interestingly, nanoindentation measurements on pure Cu and Cu/BN thin films having a similar overall thickness demonstrated that hardness and Young’s modulus of the films were improved significantly when BN interlayers are present.
ContributorsCaner, Sumeyye (Author) / Rajagopalan, Jagannathan (Thesis advisor) / Oswald, Jay (Committee member) / Solanki, Kiran (Committee member) / Arizona State University (Publisher)
Created2023
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Description
Microstructure refinement and alloy additions are considered potential routes to increase high temperature performance of existing metallic superalloys used under extreme conditions. Nanocrystalline (NC) Cu-10at%Ta exhibits such improvements over microstructurally unstable NC metals, leading to enhanced creep behavior compared to its coarse-grained (CG) counterparts. However, the low melting point of

Microstructure refinement and alloy additions are considered potential routes to increase high temperature performance of existing metallic superalloys used under extreme conditions. Nanocrystalline (NC) Cu-10at%Ta exhibits such improvements over microstructurally unstable NC metals, leading to enhanced creep behavior compared to its coarse-grained (CG) counterparts. However, the low melting point of Cu compared to other FCC metals, e.g., Ni, might lead to an early onset of diffusional creep mechanisms. Thus, this research seeks to study the thermo-mechanical behavior and stability of hierarchical (prepared using arc-melting) and NC (prepared by collaborators through powder pressing and annealing) Ni-Y-Zr alloys where Zr is expected to provide solid solution and grain boundary strengthening in hierarchical and NC alloys, respectively, while Ni-Y and Ni-Zr intermetallic precipitates (IMCs) would provide kinetic stability. Hierarchical alloys had microstructures stable up to 1100 °C with ultrafine eutectic of ~300 nm, dendritic arm spacing of ~10 μm, and grain size ~1-2 mm. Room temperature hardness tests along with uniaxial compression performed at 25 and 600 °C revealed that microhardness and yield strength of hierarchical alloys with small amounts of Y (0.5-1wt%) and Zr (1.5-3 wt%) were comparable to Ni-superalloys, due to the hierarchical microstructure and potential presence of nanoscale IMCs. In contrast, NC alloys of the same composition were found to be twice as hard as the hierarchical alloys. Creep tests at 0.5 homologous temperature showed active Coble creep mechanisms in hierarchical alloys at low stresses with creep rates slower than Fe-based superalloys and dislocation creep mechanisms at higher stresses. Creep in NC alloys at lower stresses was only 20 times faster than hierarchical alloys, with the difference in grain size ranging from 10^3 to 10^6 times at the same temperature. These NC alloys showed enhanced creep properties over other NC metals and are expected to have rates equal to or improved over the CG hierarchical alloys with ECAP processing techniques. Lastly, the in-situ wide-angle x-ray scattering (WAXS) measurements during quasi-static and creep tests implied stresses being carried mostly by the matrix before yielding and in the primary creep stage, respectively, while relaxation was observed in Ni5Zr for both hierarchical and NC alloys. Beyond yielding and in the secondary creep stage, lattice strains reached a steady state, thereby, an equilibrium between plastic strain rates was achieved across different phases, so that deformation reaches a saturation state where strain hardening effects are compensated by recovery mechanisms.
ContributorsSharma, Shruti (Author) / Peralta, Pedro (Thesis advisor) / Alford, Terry (Committee member) / Jiao, Yang (Committee member) / Solanki, Kiran (Committee member) / Arizona State University (Publisher)
Created2022
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Description
The increasing demand for structural materials with superior mechanical properties has provided a strong impetus to the discovery of novel materials, and innovations in processing techniques to improve the properties of existing materials. Methods like severe plastic deformation (SPD) and surface mechanical attrition treatment (SMAT) have led to significant enhancement

The increasing demand for structural materials with superior mechanical properties has provided a strong impetus to the discovery of novel materials, and innovations in processing techniques to improve the properties of existing materials. Methods like severe plastic deformation (SPD) and surface mechanical attrition treatment (SMAT) have led to significant enhancement in the strength of traditional structural materials like Al and Fe based alloys via microstructural refinement. However, the nanocrystalline materials produced using these techniques exhibit poor ductility due to the lack of effective strain hardening mechanisms, and as a result the well-known strength-ductility trade-off persists. To overcome this trade-off, researchers have proposed the concept of heterostructured materials, which are composed of domains ranging in size from a few nanometers to several micrometers. Over the last two decades, there has been intense research on the development of new methods to synthesize heterostructured materials. However, none of these methods is capable of providing precise control over key microstructural parameters such as average grain size, grain morphology, and volume fraction and connectivity of coarse and fine grains. Due to the lack of microstructural control, the relationship between these parameters and the deformation behavior of heterostructured materials cannot be investigated systematically, and hence designing heterostructured materials with optimized properties is currently infeasible. This work aims to address this scientific and technological challenge and is composed of two distinct but interrelated parts. The first part concerns the development of a broadly applicable synthesis method to produce heterostructured metallic films with precisely defined architectures. This method exploits two forms of film growth (epitaxial and Volmer-Weber) to generate heterostructured metallic films. The second part investigates the effect of different microstructural parameters on the deformation behavior of heterostructured metallic films with the aim of elucidating their structure-property relationships. Towards this end, freestanding heterostructured Fe films with different architectures were fabricated and uniaxially deformed using MEMS stages. The results from these experiments are presented and their implications for the mechanical properties of heterostructured materials is discussed.
ContributorsBerlia, Rohit (Author) / Rajagopalan, Jagannathan (Thesis advisor) / Sieradzki, Karl (Committee member) / Peralta, Pedro (Committee member) / Crozier, Peter (Committee member) / Solanki, Kiran (Committee member) / Arizona State University (Publisher)
Created2021
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Description
A finite element model that replicates the experimental procedure to test and certify soft body armor has been developed. The model consists of four components: bullet, clay, straps, and shoot pack with different material models that closely capture the behavior of each component when subjected to ballistic impact loading. To

A finite element model that replicates the experimental procedure to test and certify soft body armor has been developed. The model consists of four components: bullet, clay, straps, and shoot pack with different material models that closely capture the behavior of each component when subjected to ballistic impact loading. To test the fidelity of the model, three metrics are used - back face signature (BFS), the number of penetrated shoot pack layers, and the number of damaged shoot pack layers on the clay side of the shoot pack assembly. In addition, the shape and size of the bullet, and the shape and size of the hole in the shoot pack are also considered as qualitative measures to assess the developed model. The focus of this research work is to improve the shoot pack material model, while the constitutive model for the components is taken from earlier work done at ASU. Results show considerable improvement in the model in terms of capturing the number of penetrated layers, the size and shape of the holes in the shoot pack layer, and the predicted BFS. The developed finite element models can be used to predict the behavior of soft body armor for different initial conditions, shoot pack materials, and arrangement of the layers.
ContributorsPechetti, Sateesh (Author) / Rajan, Subramaniam (Thesis advisor) / Mignolet, Marc (Committee member) / Solanki, Kiran (Committee member) / Arizona State University (Publisher)
Created2024
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Description
Al 7075 alloys are used in a variety of structural applications, such as aircraft wings, automotive components, fuselage, spacecraft, missiles, etc. The mechanical and corrosion behavior of these alloys are dependent on their microstructure and the environment. Therefore, a comprehensive study on microstructural characterization and stress-environment interaction is necessary. Traditionally,

Al 7075 alloys are used in a variety of structural applications, such as aircraft wings, automotive components, fuselage, spacecraft, missiles, etc. The mechanical and corrosion behavior of these alloys are dependent on their microstructure and the environment. Therefore, a comprehensive study on microstructural characterization and stress-environment interaction is necessary. Traditionally, 2D techniques have been used to characterize microstructure, which are inaccurate and inadequate since the research has shown that the results obtained in the bulk are different from those obtained on the surface. There now exist several techniques in 3D, which can be used to characterize the microstructure. Al 7075 alloys contain second phase particles which can be classified as Fe-bearing inclusions, Si-bearing inclusions and precipitates. The variation in mechanical and corrosion properties of aluminum alloys has been attributed to the size, shape, distribution, corrosion properties and mechanical behavior of these precipitates and constituent particles. Therefore, in order to understand the performance of Al 7075 alloys, it is critical to investigate the size and distribution of inclusions and precipitates in the alloys along with their mechanical properties, such as Young's modulus, hardness and stress-strain behavior. X-ray tomography and FIB tomography were used to visualize and quantify the microstructure of constituent particles (inclusions) and precipitates, respectively. Microscale mechanical characterization techniques, such as nanoindentation and micropillar compression, were used to obtain mechanical properties of inclusions. Over the years, studies have used surface measurements to understand corrosion behavior of materials. More recently, in situ mechanical testing has become more attractive and advantageous, as it enables visualization and quantification of microstructural changes as a function of time (4D). In this study, in situ X-ray synchrotron tomography was used to study the SCC behavior of Al 7075 alloys in moisture and deionized water. Furthermore, experiments were performed in EXCO solution to study the effect of applied stress on exfoliation behavior in 3D. Contrary to 2D measurements made at the surface which suggest non-uniform crack growth rates, three dimensional measurements of the crack length led to a much more accurate measurement of crack growth rates.
ContributorsSingh, Sudhanshu Shekhar (Author) / Chawla, Nikhilesh (Thesis advisor) / Alford, Terry (Committee member) / Solanki, Kiran (Committee member) / Oswald, Jay (Committee member) / Arizona State University (Publisher)
Created2015
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Description
Hydrogen embrittlement (HE) is a phenomenon that affects both the physical and chemical properties of several intrinsically ductile metals. Consequently, understanding the mechanisms behind HE has been of particular interest in both experimental and modeling research. Discrepancies between experimental observations and modeling results have led to various proposals for HE

Hydrogen embrittlement (HE) is a phenomenon that affects both the physical and chemical properties of several intrinsically ductile metals. Consequently, understanding the mechanisms behind HE has been of particular interest in both experimental and modeling research. Discrepancies between experimental observations and modeling results have led to various proposals for HE mechanisms. Therefore, to gain insights into HE mechanisms in iron, this dissertation aims to investigate several key issues involving HE such as: a) the incipient crack tip events; b) the cohesive strength of grain boundaries (GBs); c) the dislocation-GB interactions and d) the dislocation mobility.

The crack tip, which presents a preferential trap site for hydrogen segregation, was examined using atomistic methods and the continuum based Rice-Thompson criterion as sufficient concentration of hydrogen can alter the crack tip deformation mechanism. Results suggest that there is a plausible co-existence of the adsorption induced dislocation emission and hydrogen enhanced decohesion mechanisms. In the case of GB-hydrogen interaction, we observed that the segregation of hydrogen along the interface leads to a reduction in cohesive strength resulting in intergranular failure. A methodology was further developed to quantify the role of the GB structure on this behavior.

GBs play a fundamental role in determining the strengthening mechanisms acting as an impediment to the dislocation motion; however, the presence of an unsurmountable barrier for a dislocation can generate slip localization that could further lead to intergranular crack initiation. It was found that the presence of hydrogen increases the strain energy stored within the GB which could lead to a transition in failure mode. Finally, in the case of body centered cubic metals, understanding the complex screw dislocation motion is critical to the development of an accurate continuum description of the plastic behavior. Further, the presence of hydrogen has been shown to drastically alter the plastic deformation, but the precise role of hydrogen is still unclear. Thus, the role of hydrogen on the dislocation mobility was examined using density functional theory and atomistic simulations. Overall, this dissertation provides a novel atomic-scale understanding of the HE mechanism and development of multiscale tools for future endeavors.
ContributorsAdlakha, Ilaksh (Author) / Solanki, Kiran (Thesis advisor) / Mignolet, Marc (Committee member) / Chawla, Nikhilesh (Committee member) / Jiang, Hanqing (Committee member) / Liu, Yongming (Committee member) / Arizona State University (Publisher)
Created2015