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A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature

A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detectors.

Mixed oxide semiconductor TFTs on flexible plastic substrates suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based upon a dual active layer improves both the performance and stability. Devices are directly fabricated below 200 ºC on a polyethylene naphthalate (PEN) substrate using mixed metal oxides of either zinc indium oxide (ZIO) or indium gallium zinc oxide (IGZO) as the active semiconductor. The dual active layer architecture allows for adjustment to the saturation mobility and threshold voltage stability without the requirement of high temperature annealing, which is not compatible with flexible plastic substrates like PEN. The device performance and stability is strongly dependent upon the composition of the mixed metal oxide; this dependency provides a simple route to improving the threshold voltage stability and drive performance. By switching from a single to a dual active layer, the saturation mobility increases from 1.2 cm2/V-s to 18.0 cm2/V-s, while the rate of the threshold voltage shift decreases by an order of magnitude. This approach could assist in enabling the production of devices on flexible substrates using amorphous oxide semiconductors.

Low temperature (200°C) processed amorphous silicon photodiodes were developed successfully by balancing the tradeoffs between low temperature and low stress (less than -70 MPa compressive) and device performance. Devices with a dark current of less than 1.0 pA/mm2 and a quantum efficiency of 68% have been demonstrated. Alternative processing techniques, such as pixelating the PIN diode and using organic photodiodes have also been explored for applications where extreme flexibility is desired.
ContributorsMarrs, Michael (Author) / Raupp, Gregory B (Thesis advisor) / Allee, David R. (Committee member) / Dai, Lenore L (Committee member) / Forzani, Erica S (Committee member) / Bawolek, Edward J (Committee member) / Arizona State University (Publisher)
Created2016
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Description
The accurate and fast determination of organic air pollutants for many applications and studies is critical. Exposure to volatile organic compounds (VOCs) has become an important public health concern, which may induce a lot of health effects such as respiratory irritation, headaches and dizziness. In order to monitor the personal

The accurate and fast determination of organic air pollutants for many applications and studies is critical. Exposure to volatile organic compounds (VOCs) has become an important public health concern, which may induce a lot of health effects such as respiratory irritation, headaches and dizziness. In order to monitor the personal VOCs exposure level at point-of-care, a wearable real time monitor for VOCs detection is necessary. For it to be useful in real world application, it requires low cost, small size and weight, low power consumption, high sensitivity and selectivity.

To meet these requirements, a novel mobile device for personal VOCs exposure monitor has been developed. The key sensing element is a disposable molecularly imprinted polymer based quartz tuning fork resonator. The sensor and fabrication protocol are low cost, reproducible and stable. Characterization on the sensing material and device has been done. Comparisons with gold standards in the field such as GC-MS have been conducted. And the device’s functionality and capability have been validated in field tests, proving that it’s a great tool for VOCs monitoring under different scenarios.
ContributorsDeng, Yue, Ph.D (Author) / Forzani, Erica S (Thesis advisor) / Lind, Mary L (Committee member) / Mu, Bin (Committee member) / LaBelle, Jeffery (Committee member) / Emady, Heather (Committee member) / Arizona State University (Publisher)
Created2017