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Description
Iodide-based ionic liquids have been widely employed as sources of iodide in electrolytes for applications utilizing the triiodide/iodide redox couple. While adding a low-viscosity solvent such as water to ionic liquids can greatly enhance their usefulness, mixtures of highly viscous iodide-containing ILs with water have never been studied. Thus, this

Iodide-based ionic liquids have been widely employed as sources of iodide in electrolytes for applications utilizing the triiodide/iodide redox couple. While adding a low-viscosity solvent such as water to ionic liquids can greatly enhance their usefulness, mixtures of highly viscous iodide-containing ILs with water have never been studied. Thus, this paper investigates, for the first time, mixtures of water and the ionic liquid 1-butyl-3-methylimidazolium iodide ([BMIM][I]) through a combined experimental and molecular dynamics study. The density, melting point, viscosity and conductivity of these mixtures were measured experimentally. The composition region below 50% water by mole was found to be dramatically different from the region above 50% water, with trends in density and melting point differing before and after that point. Water was found to have a profound effect on viscosity and conductivity of the IL, and the effect of hydrogen bonding was discussed. Molecular dynamics simulations representing the same mixture compositions were performed. Molecular ordering was observed, as were changes in this ordering corresponding to water content. Molecular ordering was related to the experimentally measured mixture properties, providing a possible explanation for the two distinct composition regions identified by experiment.
ContributorsNgan, Miranda L (Author) / Dai, Lenore (Thesis director) / Nofen, Elizabeth (Committee member) / Barrett, The Honors College (Contributor) / Chemical Engineering Program (Contributor)
Created2015-05
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Description
Dry and steam NanoBonding™ are conceived and researched to bond Si-based surfaces, via nucleation and growth of a two-dimensional SiOxHy or hydrated SiOxHy interphase connecting surfaces at the nanoscale across macroscopic domains. The motivation is to create strong, long lasting, hermetically bonded sensors with their electronics for the development

Dry and steam NanoBonding™ are conceived and researched to bond Si-based surfaces, via nucleation and growth of a two-dimensional SiOxHy or hydrated SiOxHy interphase connecting surfaces at the nanoscale across macroscopic domains. The motivation is to create strong, long lasting, hermetically bonded sensors with their electronics for the development of an artificial pancreas and to bond solar cells to glass panels for robust photovoltaic technology. The first step in NanoBonding™ is to synthesize smooth surfaces with 20 nm wide atomic terraces via a precursor phase, ß-cSiO2 on Si(100) and oxygen-deficient SiOx on the silica using the Herbots-Atluri process and Entrepix’s spin etching. Smooth precursor phases act as geometric and chemical template to nucleate and grow macroscopic contacting domains where cross bridging occurs via arrays of molecular strands in the hydrated SiOxHy interphase. Steam pressurization is found to catalyze NanoBonding™ consistently, eliminating the need for direct mechanical compression that limits the size and shape of wafers to be bonded in turn, reducing the cost of processing. Total surface energy measurements via 3 Liquids Contact Angle Analysis (3L CAA) enables accurate quantitative analysis of the total surface energy and each of its components. 3L CAA at each step in the process shows that surface energy drops to 42.4 ± 0.6 mJ/m2 from 57.5 ± 1.4 mJ/m2 after the Herbots-Atluri clean of an “As Received” wafer. 3L CAA after steam pressurization Nanobonding™ shows almost complete elimination from 13.8 mJ/m2 ± 1.0 to 0.002 ±- 0.0002 mJ/m2 in the contribution of acceptors to the total free surface energy, and an increase from 0.2 ± .03 to 23.8± 1.6 mJ/m2 in the contribution of donors. This is consistent with an increase in hydroxylation of the ß-cSiO2 surface as a consistent precursor phase for cross-bridging. This research optimizes the use of glycerin, water, and α-bromo-naphtalene in the use of 3L CAA to effectively quantify the components of total free surface energy which helps to better understand the most consistent method for NanoBonding™.
ContributorsBennett-Kennett, Ross Buchanan (Author) / Culbertson, Robert (Thesis director) / Herbots, Nicole (Committee member) / Foy, Joseph (Committee member) / Barrett, The Honors College (Contributor) / Materials Science and Engineering Program (Contributor) / Department of Physics (Contributor) / School of Historical, Philosophical and Religious Studies (Contributor)
Created2013-05
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Description
The problem of catastrophic damage purveys in any material application, and minimizing its occurrence is paramount for general health and safety. We have successfully synthesized, characterized, and applied dimeric 9-anthracene carboxylic acid (Di-AC)-based mechanophores particles to form stress sensing epoxy matrix composites. As Di-AC had never been previously applied as

The problem of catastrophic damage purveys in any material application, and minimizing its occurrence is paramount for general health and safety. We have successfully synthesized, characterized, and applied dimeric 9-anthracene carboxylic acid (Di-AC)-based mechanophores particles to form stress sensing epoxy matrix composites. As Di-AC had never been previously applied as a mechanophore and thermosets are rarely studied in mechanochemistry, this created an alternative avenue for study in the field. Under an applied stress, the cyclooctane-rings in the Di-AC particles reverted back to their fluorescent anthracene form, which linearly enhanced the overall fluorescence of the composite in response to the applied strain. The fluorescent signal further allowed for stress sensing in the elastic region of the stress\u2014strain curve, which is considered to be a form of damage precursor detection. Overall, the incorporation of Di-AC to the epoxy matrix added much desired stress sensing and damage precursor detection capabilities with good retention of the material properties.
ContributorsWickham, Jason Alexander (Co-author) / Nofen, Elizabeth (Co-author, Committee member) / Koo, Bonsung (Co-author) / Chattopadhyay, Aditi (Co-author) / Dai, Lenore (Co-author, Thesis director) / Chemical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2016-05
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Description
This paper begins with an introduction to the topics relevant to the research presented. Properties of diamond, diamond’s ability to be used in power electronics compared to other semiconducting materials, and a brief overview of field effect transistors are among the topics discussed. The remainder of the paper centers around

This paper begins with an introduction to the topics relevant to the research presented. Properties of diamond, diamond’s ability to be used in power electronics compared to other semiconducting materials, and a brief overview of field effect transistors are among the topics discussed. The remainder of the paper centers around research that has been conducted on seven diamond samples. Interface characterization was performed on two diamond samples, one with a high boron incorporation epitaxial layer and another with a low boron incorporation epitaxial layer. UPS He I analysis and UPS He II analysis were used to construct band alignments for the two samples, which revealed no significant differences between their measured properties. A Python program designed to optimize XPS loss peak and UPS He II graphical data analysis is also discussed in detail. Next, Hall effect measurements are examined. Hall effect measurements were carried out on seven diamond samples, two of which have high boron incorporation epitaxial layers, two of which have low boron incorporation epitaxial layers, one of which has a moderate boron incorporation epitaxial layer, and two of which have a phosphorus-doped epitaxial layer. Hall measurements of the boron-doped samples revealed no significant differences in measured parameters amongst the samples with varying boron incorporation epitaxial layers, with the exception of an expected difference in measured carrier concentration proportional to the amount of dopant incorporation in the layers. Some samples with boron-doped epitaxial layers produced measurements indicating n-type charge carriers, which is unexpected given the p-type charge carriers within these samples. The phosphorus-doped samples were unable to be measured due to overly high resistance following an oxygen termination step, and this effect was functionally reversed following hydrogen termination of the samples. It is hypothesized that Fermi pinning is responsible for this effect. The paper concludes with a summary of data discussed in previous sections and a suggested direction for future research on this topic.
ContributorsJacobs, Madeleine (Author) / Nemanich, Robert (Thesis director) / Botana, Antia (Committee member) / Barrett, The Honors College (Contributor) / College of Integrative Sciences and Arts (Contributor)
Created2022-05