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Description
This dissertation is focused on building scalable Attribute Based Security Systems (ABSS), including efficient and privacy-preserving attribute based encryption schemes and applications to group communications and cloud computing. First of all, a Constant Ciphertext Policy Attribute Based Encryption (CCP-ABE) is proposed. Existing Attribute Based Encryption (ABE) schemes usually incur large, linearly increasing ciphertext. The proposed CCP-ABE dramatically reduces the ciphertext to small, constant size. This is the first existing ABE scheme that achieves constant ciphertext size. Also, the proposed CCP-ABE scheme is fully collusion-resistant such that users can not combine their attributes to elevate their decryption capacity. Next step, efficient ABE schemes are applied to construct optimal group communication schemes and broadcast encryption schemes. An attribute based Optimal Group Key (OGK) management scheme that attains communication-storage optimality without collusion vulnerability is presented. Then, a novel broadcast encryption model: Attribute Based Broadcast Encryption (ABBE) is introduced, which exploits the many-to-many nature of attributes to dramatically reduce the storage complexity from linear to logarithm and enable expressive attribute based access policies. The privacy issues are also considered and addressed in ABSS. Firstly, a hidden policy based ABE schemes is proposed to protect receivers' privacy by hiding the access policy. Secondly,a new concept: Gradual Identity Exposure (GIE) is introduced to address the restrictions of hidden policy based ABE schemes. GIE's approach is to reveal the receivers' information gradually by allowing ciphertext recipients to decrypt the message using their possessed attributes one-by-one. If the receiver does not possess one attribute in this procedure, the rest of attributes are still hidden. Compared to hidden-policy based solutions, GIE provides significant performance improvement in terms of reducing both computation and communication overhead. Last but not least, ABSS are incorporated into the mobile cloud computing scenarios. In the proposed secure mobile cloud data management framework, the light weight mobile devices can securely outsource expensive ABE operations and data storage to untrusted cloud service providers. The reported scheme includes two components: (1) a Cloud-Assisted Attribute-Based Encryption/Decryption (CA-ABE) scheme and (2) An Attribute-Based Data Storage (ABDS) scheme that achieves information theoretical optimality.
ContributorsZhou, Zhibin (Author) / Huang, Dijiang (Thesis advisor) / Yau, Sik-Sang (Committee member) / Ahn, Gail-Joon (Committee member) / Reisslein, Martin (Committee member) / Arizona State University (Publisher)
Created2011
Description
Carrier lifetime is one of the few parameters which can give information about the low defect densities in today's semiconductors. In principle there is no lower limit to the defect density determined by lifetime measurements. No other technique can easily detect defect densities as low as 10-9 - 10-10 cm-3 in a simple, contactless room temperature measurement. However in practice, recombination lifetime τr measurements such as photoconductance decay (PCD) and surface photovoltage (SPV) that are widely used for characterization of bulk wafers face serious limitations when applied to thin epitaxial layers, where the layer thickness is smaller than the minority carrier diffusion length Ln. Other methods such as microwave photoconductance decay (µ-PCD), photoluminescence (PL), and frequency-dependent SPV, where the generated excess carriers are confined to the epitaxial layer width by using short excitation wavelengths, require complicated configuration and extensive surface passivation processes that make them time-consuming and not suitable for process screening purposes. Generation lifetime τg, typically measured with pulsed MOS capacitors (MOS-C) as test structures, has been shown to be an eminently suitable technique for characterization of thin epitaxial layers. It is for these reasons that the IC community, largely concerned with unipolar MOS devices, uses lifetime measurements as a "process cleanliness monitor." However when dealing with ultraclean epitaxial wafers, the classic MOS-C technique measures an effective generation lifetime τg eff which is dominated by the surface generation and hence cannot be used for screening impurity densities. I have developed a modified pulsed MOS technique for measuring generation lifetime in ultraclean thin p/p+ epitaxial layers which can be used to detect metallic impurities with densities as low as 10-10 cm-3. The widely used classic version has been shown to be unable to effectively detect such low impurity densities due to the domination of surface generation; whereas, the modified version can be used suitably as a metallic impurity density monitoring tool for such cases.
ContributorsElhami Khorasani, Arash (Author) / Alford, Terry (Thesis advisor) / Goryll, Michael (Committee member) / Bertoni, Mariana (Committee member) / Arizona State University (Publisher)
Created2013
Description
Photodetectors in the 1.7 to 4.0 μm range are being commercially developed on InP substrates to meet the needs of longer wavelength applications such as thermal and medical sensing. Currently, these devices utilize high indium content metamorphic Ga1-xInxAs (x > 0.53) layers to extend the wavelength range beyond the 1.7 μm achievable using lattice matched GaInAs. The large lattice mismatch required to reach the extended wavelengths results in photodetector materials that contain a large number of misfit dislocations. The low quality of these materials results in a large nonradiative Shockley Read Hall generation/recombination rate that is manifested as an undesirable large thermal noise level in these photodetectors. This work focuses on utilizing the different band structure engineering methods to design more efficient devices on InP substrates. One prospective way to improve photodetector performance at the extended wavelengths is to utilize lattice matched GaInAs/GaAsSb structures that have a type-II band alignment, where the ground state transition energy of the superlattice is smaller than the bandgap of either constituent material. Over the extended wavelength range of 2 to 3 μm this superlattice structure has an optimal period thickness of 3.4 to 5.2 nm and a wavefunction overlap of 0.8 to 0.4, respectively. In using a type-II superlattice to extend the cutoff wavelength there is a tradeoff between the wavelength reached and the electron-hole wavefunction overlap realized, and hence absorption coefficient achieved. This tradeoff and the subsequent reduction in performance can be overcome by two methods: adding bismuth to this type-II material system; applying strain on both layers in the system to attain strain-balanced condition. These allow the valance band alignment and hence the wavefunction overlap to be tuned independently of the wavelength cutoff. Adding 3% bismuth to the GaInAs constituent material, the resulting lattice matched Ga0.516In0.484As0.970Bi0.030/GaAs0.511Sb0.489superlattice realizes a 50% larger absorption coefficient. While as, similar results can be achieved with strain-balanced condition with strain limited to 1.9% on either layer. The optimal design rules derived from the different possibilities make it feasible to extract superlattice period thickness with the best absorption coefficient for any cutoff wavelength in the range.
ContributorsSharma, Ankur R (Author) / Johnson, Shane (Thesis advisor) / Goryll, Michael (Committee member) / Roedel, Ronald (Committee member) / Arizona State University (Publisher)
Created2013
Description
Today, many wireless networks are single-channel systems. However, as the interest in wireless services increases, the contention by nodes to occupy the medium is more intense and interference worsens. One direction with the potential to increase system throughput is multi-channel systems. Multi-channel systems have been shown to reduce collisions and increase concurrency thus producing better bandwidth usage. However, the well-known hidden- and exposed-terminal problems inherited from single-channel systems remain, and a new channel selection problem is introduced. In this dissertation, Multi-channel medium access control (MAC) protocols are proposed for mobile ad hoc networks (MANETs) for nodes equipped with a single half-duplex transceiver, using more sophisticated physical layer technologies. These include code division multiple access (CDMA), orthogonal frequency division multiple access (OFDMA), and diversity. CDMA increases channel reuse, while OFDMA enables communication by multiple users in parallel. There is a challenge to using each technology in MANETs, where there is no fixed infrastructure or centralized control. CDMA suffers from the near-far problem, while OFDMA requires channel synchronization to decode the signal. As a result CDMA and OFDMA are not yet widely used. Cooperative (diversity) mechanisms provide vital information to facilitate communication set-up between source-destination node pairs and help overcome limitations of physical layer technologies in MANETs. In this dissertation, the Cooperative CDMA-based Multi-channel MAC (CCM-MAC) protocol uses CDMA to enable concurrent transmissions on each channel. The Power-controlled CDMA-based Multi-channel MAC (PCC-MAC) protocol uses transmission power control at each node and mitigates collisions of control packets on the control channel by using different sizes of the spreading factor to have different processing gains for the control signals. The Cooperative Dual-access Multi-channel MAC (CDM-MAC) protocol combines the use of OFDMA and CDMA and minimizes channel interference by a resolvable balanced incomplete block design (BIBD). In each protocol, cooperating nodes help reduce the incidence of the multi-channel hidden- and exposed-terminal and help address the near-far problem of CDMA by supplying information. Simulation results show that each of the proposed protocols achieve significantly better system performance when compared to IEEE 802.11, other multi-channel protocols, and another protocol CDMA-based.
ContributorsMoon, Yuhan (Author) / Syrotiuk, Violet R. (Thesis advisor) / Huang, Dijiang (Committee member) / Reisslein, Martin (Committee member) / Sen, Arunabha (Committee member) / Arizona State University (Publisher)
Created2010
Description
With the progression of different industries moving away from employing secretaries for business professionals and professors, there exists a void in the area of personal assistance. This problem has existing solutions readily available to replace this service, i.e. secretary or personal assistant, tend to range from expensive and useful to inexpensive and not efficient. This leaves a low cost niche into the market of a virtual office assistant or manager to display messages and to help direct people in obtaining contact information. The development of a low cost solution revolves around the software needed to solve the various problems an accessible and user friendly Virtual Interface in which the owner of the Virtual Office Manager/Assistant can communicate to colleagues who are at standby outside of the owner's office and vice versa. This interface will be allowing the owner to describe the status pertaining to their absence or any other message sent to the interface. For example, the status of the owner's work commute can be described with a simple "Running Late" phrase or a message like "Busy come back in 10 minutes". In addition, any individual with an interest to these entries will have the opportunity to respond back because the device will provide contact information. When idle, the device will show supplemental information such as the owner's calendar and name. The scope of this will be the development and testing of solutions to achieve these goals.
ContributorsOffenberger, Spencer Eliot (Author) / Kozicki, Michael (Thesis director) / Goryll, Michael (Committee member) / Electrical Engineering Program (Contributor) / Computer Science and Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2016-12
Description
This research emphasizes the use of low energy and low temperature post processing to improve the performance and lifetime of thin films and thin film transistors, by applying the fundamentals of interaction of materials with conductive heating and electromagnetic radiation. Single frequency microwave anneal is used to rapidly recrystallize the damage induced during ion implantation in Si substrates. Volumetric heating of the sample in the presence of the microwave field facilitates quick absorption of radiation to promote recrystallization at the amorphous-crystalline interface, apart from electrical activation of the dopants due to relocation to the substitutional sites. Structural and electrical characterization confirm recrystallization of heavily implanted Si within 40 seconds anneal time with minimum dopant diffusion compared to rapid thermal annealed samples. The use of microwave anneal to improve performance of multilayer thin film devices, e.g. thin film transistors (TFTs) requires extensive study of interaction of individual layers with electromagnetic radiation. This issue has been addressed by developing detail understanding of thin films and interfaces in TFTs by studying reliability and failure mechanisms upon extensive stress test. Electrical and ambient stresses such as illumination, thermal, and mechanical stresses are inflicted on the mixed oxide based thin film transistors, which are explored due to high mobilities of the mixed oxide (indium zinc oxide, indium gallium zinc oxide) channel layer material. Semiconductor parameter analyzer is employed to extract transfer characteristics, useful to derive mobility, subthreshold, and threshold voltage parameters of the transistors. Low temperature post processing anneals compatible with polymer substrates are performed in several ambients (oxygen, forming gas and vacuum) at 150 °C as a preliminary step. The analysis of the results pre and post low temperature anneals using device physics fundamentals assists in categorizing defects leading to failure/degradation as: oxygen vacancies, thermally activated defects within the bandgap, channel-dielectric interface defects, and acceptor-like or donor-like trap states. Microwave anneal has been confirmed to enhance the quality of thin films, however future work entails extending the use of electromagnetic radiation in controlled ambient to facilitate quick post fabrication anneal to improve the functionality and lifetime of these low temperature fabricated TFTs.
ContributorsVemuri, Rajitha (Author) / Alford, Terry L. (Thesis advisor) / Theodore, N David (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
Highly reflective back surfaces are critical for reaching the detailed balance efficiency limits of photovoltaics. In addition to being highly reflective, the back surface and contact of the cell must have low resistance. A traditional approach to balance reflectance and contact resistance has been to use point contact geometries, which are process intensive. This work considers using a transparent conductive oxide and metal mirror, which, due to being two planar layers, can be fabricated much more easily. To study the tradeoff between resistance and absorptance for this contact, the oxide doping concentration is varied. Test structures to measure the doping concentration, contact resistance, and parasitic absorptance were fabricated. Using measured parameters, the performance of high-quality GaAs photonic power converters is modeled. Measurements show that although the contact resistance is comparatively high, it can be controlled through doping in the oxide and semiconductor composition. Furthermore, modeling shows the contact resistance is not prohibitively high for one-sun or lower illumination level devices. The hemispheric reflectance of the experimental oxide/metal back contact is modeled to be 96.7%, which is quite high considering that it is a conductive back contact. Although the oxide/metal contact structure does not perform electrically or optically as well as more complex point contact structures, this work indicates the advantages of the planar transparent conductive oxide/metal contact structure near one-sun equivalent current densities for solar cells and photonic power converters, where it is desirable to avoid the device fabrication costs of back contact patterning.
ContributorsGregory, Christopher Thomas (Author) / King, Richard R (Thesis advisor) / Goryll, Michael (Committee member) / Rolston, Nicholas (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2024
Description
The silicon-based solar cell has been extensively deployed in photovoltaic industry and plays an important role in renewable energy industries. A more energy-efficient, environment-harmless and eco-friendly silicon production technique is required for price-competitive solar energy harvesting. Silicon electrorefining in molten salt is promising for the ultrapure solar-grade Si production. To avoid using highly corrosive fluoride salt, CaCl2-based salt is widely employed for silicon electroreduction. For Si electroreduction in CaCl2-based salt, CaO is usually added to enhance the solubility of SiO2. However, the existence of oxygen in molten salt could result in system corrosion, anode passivation and the co-deposition of secondary phases such as CaSiO3 and SiO2 at the cathode. This research focuses on the development of reusable oxygen-free CaCl2-based molten salt for solar-grade silicon electrorefining. A new multi-potential electropurification process has been proposed and proven to be more effective in impurities removal. The as-received salt and the salt after electrorefining have been electropurified. The inductively-coupled plasma mass spectrometry and cyclic voltammetry have been utilized to determine the impurities removal of electropurification. The salt after silicon electrorefining has been regenerated to its original purity level before by the multi-potential electropurification process, demonstrating the feasibility of a reusable salt by electropurification. In an oxygen-free CaCl2-based salt without silicon precursor, the silicon dissolved from the silicon anode can be successfully deposited at the cathode. The silicon anode has been operated for more than 50 hours without passivation in the oxygen-free system. Silicon ions start to be deposited after 0.17 g of silicon has been dissolved into the salt from the silicon anode. A 180 µm deposit with a silver-luster surface was obtained at the cathode. The main impurities in the silicon anode such as aluminum, iron and titanium were not found in the silicon deposits. No oxygen-containing secondary phases are detected in the silicon deposits. These results confirm the feasibility of silicon electrorefining in the oxygen-free CaCl2-based salt.
ContributorsTseng, Mao-Feng (Author) / Tao, Meng (Thesis advisor) / Kannan, Arunachala Mada (Committee member) / Mu, Linqin (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2023
Description
In this project, current-voltage (I-V) and Deep Level Transient Spectroscopy (DLTS) measurements are used to (a) characterize the electrical properties of Nb/p-type Si Schottky barriers, (b) identify the concentration and physical character of the electrically active defects present in the depletion region, and (c) use thermal processing to reduce the concentration or eliminate the defects. Barrier height determinations using temperature-dependent I-V measurements indicate that the barrier height decreases from 0.50 eV to 0.48 eV for anneals above 200 C. The electrically-active defect concentration measured using DLTS (deep level transient spectroscopy) drops markedly after anneals at 250 C.
A significant increase in leakage currents is almost always observed in near-ideal devices upon annealing. In contrast, non-ideal devices dominated by leakage currents annealed at 150 C to 250 C exhibit a significant decrease in such currents.
A significant increase in leakage currents is almost always observed in near-ideal devices upon annealing. In contrast, non-ideal devices dominated by leakage currents annealed at 150 C to 250 C exhibit a significant decrease in such currents.
ContributorsKrishna Murthy, Madhu (Author) / Newman, Nathan (Thesis advisor) / Goryll, Michael (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2018
Description
Mobile devices have penetrated into every aspect of modern world. For one thing, they are becoming ubiquitous in daily life. For the other thing, they are storing more and more data, including sensitive data. Therefore, security and privacy of mobile devices are indispensable. This dissertation consists of five parts: two authentication schemes, two attacks, and one countermeasure related to security and privacy of mobile devices.
Specifically, in Chapter 1, I give an overview the challenges and existing solutions in these areas. In Chapter 2, a novel authentication scheme is presented, which is based on a user’s tapping or sliding on the touchscreen of a mobile device. In Chapter 3, I focus on mobile app fingerprinting and propose a method based on analyzing the power profiles of targeted mobile devices. In Chapter 4, I mainly explore a novel liveness detection method for face authentication on mobile devices. In Chapter 5, I investigate a novel keystroke inference attack on mobile devices based on user eye movements. In Chapter 6, a novel authentication scheme is proposed, based on detecting a user’s finger gesture through acoustic sensing. In Chapter 7, I discuss the future work.
Specifically, in Chapter 1, I give an overview the challenges and existing solutions in these areas. In Chapter 2, a novel authentication scheme is presented, which is based on a user’s tapping or sliding on the touchscreen of a mobile device. In Chapter 3, I focus on mobile app fingerprinting and propose a method based on analyzing the power profiles of targeted mobile devices. In Chapter 4, I mainly explore a novel liveness detection method for face authentication on mobile devices. In Chapter 5, I investigate a novel keystroke inference attack on mobile devices based on user eye movements. In Chapter 6, a novel authentication scheme is proposed, based on detecting a user’s finger gesture through acoustic sensing. In Chapter 7, I discuss the future work.
ContributorsChen, Yimin (Author) / Zhang, Yanchao (Thesis advisor) / Zhang, Junshan (Committee member) / Reisslein, Martin (Committee member) / Ying, Lei (Committee member) / Arizona State University (Publisher)
Created2018