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Description
Near-field thermal radiation occurs when the distance between two surfaces at different temperatures is less than the characteristic wavelength of thermal radiation. While theoretical studies predict that the near-field radiative heat transfer could exceed Planck’s blackbody limit in the far-field by orders of magnitudes depending on the materials and gap distance, experimental measurement of super-Planckian near-field radiative heat flux is extremely challenging in particular at sub-100-nm vacuum gaps and few has been demonstrated. The objective of this thesis is to develop a novel thermal metrology based on AFM bi-material cantilever and experimentally measure near-field thermal radiation.
The experiment setup is completed and validated by measuring the near-field radiative heat transfer between a silica microsphere and a silica substrate and comparing with theoretical calculations. The bi-material AFM cantilever made of SiNi and Au bends with temperature changes, whose deflection is monitored by the position-sensitive diode. After careful calibration, the bi-material cantilever works as a thermal sensor, from which the near-field radiative conductance and tip temperature can be deduced when the silica substrate approaches the silica sphere attached to the cantilever by a piezo stage with a resolution of 1 nm from a few micrometers away till physical contact. The developed novel near-field thermal metrology will be used to measure the near-field radiative heat transfer between the silica microsphere and planar SiC surface as well as nanostructured SiC metasurface. This research aims to enhance the fundamental understandings of radiative heat transfer in the near-field which could lead to advances in microelectronics, optical data storage and thermal systems for energy conversion and thermal management.
The experiment setup is completed and validated by measuring the near-field radiative heat transfer between a silica microsphere and a silica substrate and comparing with theoretical calculations. The bi-material AFM cantilever made of SiNi and Au bends with temperature changes, whose deflection is monitored by the position-sensitive diode. After careful calibration, the bi-material cantilever works as a thermal sensor, from which the near-field radiative conductance and tip temperature can be deduced when the silica substrate approaches the silica sphere attached to the cantilever by a piezo stage with a resolution of 1 nm from a few micrometers away till physical contact. The developed novel near-field thermal metrology will be used to measure the near-field radiative heat transfer between the silica microsphere and planar SiC surface as well as nanostructured SiC metasurface. This research aims to enhance the fundamental understandings of radiative heat transfer in the near-field which could lead to advances in microelectronics, optical data storage and thermal systems for energy conversion and thermal management.
ContributorsKondakindi, Ramteja Reddy (Author) / Wang, Liping (Thesis advisor) / Kwon, Beomjin (Committee member) / Wang, Qing Hua (Committee member) / Arizona State University (Publisher)
Created2019
Description
Nanoholes on the basal plane of graphene can provide abundant mass transport channels and chemically active sites for enhancing the electrochemical performance, making this material highly promising in applications such as supercapacitors, batteries, desalination, molecule or ion detection, and biosensing. However, the current solution-based chemical etching processes to manufacture these nanoholes commonly suffer from low process efficiency, scalability, and controllability, because conventional bulk heating cannot promote the etching reactions. Herein, a novel manufacturing method is developed to address this issue using microwave irradiation to facilitate and control the chemical etching of graphene. In this process, microwave irradiation induces selective heating of graphene in the aqueous solution due to an energy dissipation mechanism coupled with the dielectric and conduction losses. This strategy brings a remarkable reduction of processing time from hour-scale to minute-scale compared to the conventional approaches. By further incorporating microwave pretreatment, it is possible to control the population and area percentage of the in-plane nanoholes on graphene. Theoretical calculations reveal that the nanoholes emerge and grow by a repeating reduction–oxidation process occurring at the edge-sites atoms around vacancy defects on the graphene basal plane. The reduced holey graphene oxide sheets obtained via the microwave-assisted chemical etching method exhibit great potentials in supercapacitors and electrocatalysis. Excellent capacitive performance and electrocatalytic activity are observed in electrochemical measurements. The improvements against the non-holey counterpart are attributed to the enhanced kinetics involving ion diffusion and heterogeneous charge transfer.
ContributorsWang, Dini (Author) / Nian, Qiong (Thesis advisor) / Alford, Terry (Committee member) / Wang, Qing Hua (Committee member) / Zhuang, Houlong (Committee member) / Arizona State University (Publisher)
Created2021