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- All Subjects: Materials Science
- All Subjects: Mechanical Engineering
- Creators: Herrmann, Marcus
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Description
As the 3rd generation solar cell, quantum dot solar cells are expected to outperform the first 2 generations with higher efficiency and lower manufacture cost. Currently the main problems for QD cells are the low conversion efficiency and stability. This work is trying to improve the reliability as well as the device performance by inserting an interlayer between the metal cathode and the active layer. Titanium oxide and a novel nitrogen doped titanium oxide were compared and TiOxNy capped device shown a superior performance and stability to TiOx capped one. A unique light anneal effect on the interfacial layer was discovered first time and proved to be the trigger of the enhancement of both device reliability and efficiency. The efficiency was improved by 300% and the device can retain 73.1% of the efficiency with TiOxNy when normal device completely failed after kept for long time. Photoluminescence indicted an increased charge disassociation rate at TiOxNy interface. External quantum efficiency measurement also inferred a significant performance enhancement in TiOxNy capped device, which resulted in a higher photocurrent. X-ray photoelectron spectrometry was performed to explain the impact of light doping on optical band gap. Atomic force microscopy illustrated the effect of light anneal on quantum dot polymer surface. The particle size is increased and the surface composition is changed after irradiation. The mechanism for performance improvement via a TiOx based interlayer was discussed based on a trap filling model. Then Tunneling AFM was performed to further confirm the reliability of interlayer capped organic photovoltaic devices. As a powerful tool based on SPM technique, tunneling AFM was able to explain the reason for low efficiency in non-capped inverted organic photovoltaic devices. The local injection properties as well as the correspondent topography were compared in organic solar cells with or without TiOx interlayer. The current-voltage characteristics were also tested at a single interested point. A severe short-circuit was discovered in non capped devices and a slight reverse bias leakage current was also revealed in TiOx capped device though tunneling AFM results. The failure reason for low stability in normal devices was also discussed comparing to capped devices.
ContributorsYu, Jialin (Author) / Jabbour, Ghassan E. (Thesis advisor) / Alford, Terry L. (Thesis advisor) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2011
Description
Silicon nanowires were grown epitaxially on Si (100) and (111) surfaces using the Vapor-Liquid-Solid (VLS) mechanism under both thermal and plasma enhanced growth conditions. Nanowire morphology was investigated as a function of temperature, time, disilane partial pressure and substrate preparation. Silicon nanowires synthesized in low temperature plasma typically curved compared to the linear nanowires grown under simple thermal conditions. The nanowires tended bend more with increasing disilane partial gas pressure up to 25 x10-3 mTorr. The nanowire curvature measured geometrically is correlated with the shift of the main silicon peak obtained in Raman spectroscopy. A mechanistic hypothesis was proposed to explain the bending during plasma activated growth. Additional driving forces related to electrostatic and Van der Waals forces were also discussed. Deduced from a systematic variation of a three-step experimental protocol, the mechanism for bending was associated with asymmetric deposition rate along the outer and inner wall of nanowire. The conditions leading to nanowire branching were also examined using a two-step growth process. Branching morphologies were examined as a function of plasma powers between 1.5 W and 3.5 W. Post-annealing thermal and plasma-assisted treatments in hydrogen were compared to understand the influences in the absence of an external silicon source (otherwise supplied by disilane). Longer and thicker nanowires were associated with longer annealing times due to an Ostwald-like ripening effect. The roles of surface diffusion, gas diffusion, etching and deposition rates were examined.
ContributorsJoun, Hee-Joung (Author) / Petuskey, William T. (Thesis advisor) / Drucker, Jeff (Committee member) / Chizmeshya, Andrew (Committee member) / Arizona State University (Publisher)
Created2011
Description
Amorphous oxide semiconductors are promising new materials for various optoelectronic applications. In this study, improved electrical and optical properties upon thermal and microwave processing of mixed-oxide semiconductors are reported. First, arsenic-doped silicon was used as a model system to understand susceptor-assisted microwave annealing. Mixed oxide semiconductor films of indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO) were deposited by room-temperature RF sputtering on flexible polymer substrates. Thermal annealing in different environments - air, vacuum and oxygen was done. Electrical and optical characterization was carried out before and after annealing. The degree of reversal in the degradation in electrical properties of the thin films upon annealing in oxygen was assessed by subjecting samples to subsequent vacuum anneals. To further increase the conductivity of the IGZO films, Ag layers of various thicknesses were embedded between two IGZO layers. Optical performance of the multilayer structures was improved by susceptor-assisted microwave annealing and furnace-annealing in oxygen environment without compromising on their electrical conductivity. The post-processing of the films in different environments was used to develop an understanding of mechanisms of carrier generation, transport and optical absorption. This study establishes IGZO as a viable transparent conductor, which can be deposited at room-temperature and processed by thermal and microwave annealing to improve electrical and optical performance for applications in flexible electronics and optoelectronics.
ContributorsGadre, Mandar (Author) / Alford, Terry L. (Thesis advisor) / Schroder, Dieter (Committee member) / Krause, Stephen (Committee member) / Theodore, David (Committee member) / Arizona State University (Publisher)
Created2011
Description
Microchannel heat sinks can possess heat transfer characteristics unavailable in conventional heat exchangers; such sinks offer compact solutions to otherwise intractable thermal management problems, notably in small-scale electronics cooling. Flow boiling in microchannels allows a very high heat transfer rate, but is bounded by the critical heat flux (CHF). This thesis presents a theoretical-numerical study of a method to improve the heat rejection capability of a microchannel heat sink via expansion of the channel cross-section along the flow direction. The thermodynamic quality of the refrigerant increases during flow boiling, decreasing the density of the bulk coolant as it flows. This may effect pressure fluctuations in the channels, leading to nonuniform heat transfer and local dryout in regions exceeding CHF. This undesirable phenomenon is counteracted by permitting the cross-section of the microchannel to increase along the direction of flow, allowing more volume for the vapor. Governing equations are derived from a control-volume analysis of a single heated rectangular microchannel; the cross-section is allowed to expand in width and height. The resulting differential equations are solved numerically for a variety of channel expansion profiles and numbers of channels. The refrigerant is R-134a and channel parameters are based on a physical test bed in a related experiment. Significant improvement in CHF is possible with moderate area expansion. Minimal additional manufacturing costs could yield major gains in the utility of microchannel heat sinks. An optimum expansion rate occurred in certain cases, and alterations in the channel width are, in general, more effective at improving CHF than alterations in the channel height. Modest expansion in height enables small width expansions to be very effective.
ContributorsMiner, Mark (Author) / Phelan, Patrick E (Thesis advisor) / Herrmann, Marcus (Committee member) / Chen, Kangping (Committee member) / Arizona State University (Publisher)
Created2011
Description
Ge1-ySny alloys represent a new class of photonic materials for integrated optoelectronics on Si. In this work, the electrical and optical properties of Ge1-ySny alloy films grown on Si, with concentrations in the range 0 ≤ y ≤ 0.04, are studied via a variety of methods. The first microelectronic devices from GeSn films were fabricated using newly developed CMOS-compatible protocols, and the devices were characterized with respect to their electrical properties and optical response. The detectors were found to have a detection range that extends into the near-IR, and the detection edge is found to shift to longer wavelengths with increasing Sn content, mainly due to the compositional dependence of the direct band gap E0. With only 2 % Sn, all of the telecommunication bands are covered by a single detector. Room temperature photoluminescence was observed from GeSn films with Sn content up to 4 %. The peak wavelength of the emission was found to shift to lower energies with increasing Sn content, corresponding to the decrease in the direct band gap E0 of the material. An additional peak in the spectrum was assigned to the indirect band gap. The separation between the direct and indirect peaks was found to decrease with increasing Sn concentration, as expected. Electroluminescence was also observed from Ge/Si and Ge0.98Sn0.02 photodiodes under forward bias, and the luminescence spectra were found to match well with the observed photoluminescence spectra. A theoretical expression was developed for the luminescence due to the direct band gap and fit to the data.
ContributorsMathews, Jay (Author) / Menéndez, Jose (Thesis advisor) / Kouvetakis, John (Thesis advisor) / Drucker, Jeffery (Committee member) / Chizmeshya, Andrew (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2011
Description
A numerical study of incremental spin-up and spin-up from rest of a thermally- stratified fluid enclosed within a right circular cylinder with rigid bottom and side walls and stress-free upper surface is presented. Thermally stratified spin-up is a typical example of baroclinity, which is initiated by a sudden increase in rotation rate and the tilting of isotherms gives rise to baroclinic source of vorticity. Research by (Smirnov et al. [2010a]) showed the differences in evolution of instabilities when Dirichlet and Neumann thermal boundary conditions were applied at top and bottom walls. Study of parametric variations carried out in this dissertation confirmed the instability patterns observed by them for given aspect ratio and Rossby number values greater than 0.5. Also results reveal that flow maintained axisymmetry and stability for short aspect ratio containers independent of amount of rotational increment imparted. Investigation on vorticity components provides framework for baroclinic vorticity feedback mechanism which plays important role in delayed rise of instabilities when Dirichlet thermal Boundary Conditions are applied.
ContributorsKher, Aditya Deepak (Author) / Chen, Kangping (Thesis advisor) / Huang, Huei-Ping (Committee member) / Herrmann, Marcus (Committee member) / Arizona State University (Publisher)
Created2011
Description
This thesis discusses the use of low temperature microwave anneal as an alternative technique to recrystallize materials damaged or amorphized due to implantation techniques. The work focuses on the annealing of high-Z doped Si wafers that are incapable of attaining high temperatures required for recrystallizing the damaged implanted layers by microwave absorption The increasing necessity for quicker and more efficient processing techniques motivates study of the use of a single frequency applicator microwave cavity along with a Fe2O3 infused SiC-alumina susceptor/applicator as an alternative post implantation process. Arsenic implanted Si samples of different dopant concentrations and implantation energies were studied pre and post microwave annealing. A set of as-implanted Si samples were also used to assess the effect of inactive dopants against presence of electrically active dopants on the recrystallization mechanisms. The extent of damage repair and Si recrystallization of the damage caused by arsenic and Si implantation of Si is determined by cross-section transmission electron microscopy and Raman spectroscopy. Dopant activation is evaluated for the As implanted Si by sheet resistance measurements. For the same, secondary ion mass spectroscopy analysis is used to compare the extent of diffusion that results from such microwave annealing with that experienced when using conventional rapid thermal annealing (RTA). Results show that compared to susceptor assisted microwave annealing, RTA caused undesired dopant diffusion. The SiC-alumina susceptor plays a predominant role in supplying heat to the Si substrate, and acts as an assistor that helps a high-Z dopant like arsenic to absorb the microwave energy using a microwave loss mechanism which is a combination of ionic and dipole losses. Comparisons of annealing of the samples were done with and without the use of the susceptor, and confirm the role played by the susceptor, since the samples donot recrystallize when the surface heating mechanism provided by the susceptor is not incorporated. Variable frequency microwave annealing was also performed over the as-implanted Si samples for durations and temperatures higher than the single frequency microwave anneal, but only partial recrystallization of the damaged layer was achieved.
ContributorsVemuri, Rajitha (Author) / Alford, Terry L. (Thesis advisor) / Theodore, David (Committee member) / Krause, Stephen (Committee member) / Arizona State University (Publisher)
Created2011
Description
Multiphase flows are an important part of many natural and technological phe- nomena such as ocean-air coupling (which is important for climate modeling) and the atomization of liquid fuel jets in combustion engines. The unique challenges of multiphase flow often make analytical solutions to the governing equations impos- sible and experimental investigations very difficult. Thus, high-fidelity numerical simulations can play a pivotal role in understanding these systems. This disserta- tion describes numerical methods developed for complex multiphase flows and the simulations performed using these methods. First, the issue of multiphase code verification is addressed. Code verification answers the question "Is this code solving the equations correctly?" The method of manufactured solutions (MMS) is a procedure for generating exact benchmark solutions which can test the most general capabilities of a code. The chief obstacle to applying MMS to multiphase flow lies in the discontinuous nature of the material properties at the interface. An extension of the MMS procedure to multiphase flow is presented, using an adaptive marching tetrahedron style algorithm to compute the source terms near the interface. Guidelines for the use of the MMS to help locate coding mistakes are also detailed. Three multiphase systems are then investigated: (1) the thermocapillary motion of three-dimensional and axisymmetric drops in a confined apparatus, (2) the flow of two immiscible fluids completely filling an enclosed cylinder and driven by the rotation of the bottom endwall, and (3) the atomization of a single drop subjected to a high shear turbulent flow. The systems are simulated numerically by solving the full multiphase Navier- Stokes equations coupled to the various equations of state and a level set interface tracking scheme based on the refined level set grid method. The codes have been parallelized using MPI in order to take advantage of today's very large parallel computational architectures. In the first system, the code's ability to handle surface tension and large tem- perature gradients is established. In the second system, the code's ability to sim- ulate simple interface geometries with strong shear is demonstrated. In the third system, the ability to handle extremely complex geometries and topology changes with strong shear is shown.
ContributorsBrady, Peter, Ph.D (Author) / Herrmann, Marcus (Thesis advisor) / Lopez, Juan (Thesis advisor) / Adrian, Ronald (Committee member) / Calhoun, Ronald (Committee member) / Chen, Kangping (Committee member) / Arizona State University (Publisher)
Created2011
Description
Programmable metallization cell (PMC) technology is based on an electrochemical phenomenon in which a metallic electrodeposit can be grown or dissolved between two electrodes depending on the voltage applied between them. Devices based on this phenomenon exhibit a unique, self-healing property, as a broken metallic structure can be healed by applying an appropriate voltage between the two broken ends. This work explores methods of fabricating interconnects and switches based on PMC technology on flexible substrates. The objective was the evaluation of the feasibility of using this technology in flexible electronics applications in which reliability is a primary concern. The re-healable property of the interconnect is characterized for the silver doped germanium selenide (Ag-Ge-Se) solid electrolyte system. This property was evaluated by measuring the resistances of the healed interconnect structures and comparing these to the resistances of the unbroken structures. The reliability of the interconnects in both unbroken and healed states is studied by investigating the resistances of the structures to DC voltages, AC voltages and different temperatures as a function of time. This work also explores replacing silver with copper for these interconnects to enhance their reliability. A model for PMC-based switches on flexible substrates is proposed and compared to the observed device behavior with the objective of developing a formal design methodology for these devices. The switches were subjected to voltage sweeps and their resistance was investigated as a function of sweep voltage. The resistance of the switches as a function of voltage pulse magnitude when placed in series with a resistance was also investigated. A model was then developed to explain the behavior of these devices. All observations were based on statistical measurements to account for random errors. The results of this work demonstrate that solid electrolyte based interconnects display self-healing capability, which depends on the applied healing voltage and the current limit. However, they fail at lower current densities than metal interconnects due to an ion-drift induced failure mechanism. The results on the PMC based switches demonstrate that a model comprising a Schottky diode in parallel with a variable resistor predicts the behavior of the device.
ContributorsBaliga, Sunil Ravindranath (Author) / Kozicki, Michael N (Thesis advisor) / Schroder, Dieter K. (Committee member) / Chae, Junseok (Committee member) / Alford, Terry L. (Committee member) / Arizona State University (Publisher)
Created2011
Description
A new method of adaptive mesh generation for the computation of fluid flows is investigated. The method utilizes gradients of the flow solution to adapt the size and stretching of elements or volumes in the computational mesh as is commonly done in the conventional Hessian approach. However, in the new method, higher-order gradients are used in place of the Hessian. The method is applied to the finite element solution of the incompressible Navier-Stokes equations on model problems. Results indicate that a significant efficiency benefit is realized.
ContributorsShortridge, Randall (Author) / Chen, Kang Ping (Thesis advisor) / Herrmann, Marcus (Thesis advisor) / Wells, Valana (Committee member) / Huang, Huei-Ping (Committee member) / Mittelmann, Hans (Committee member) / Arizona State University (Publisher)
Created2011