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- All Subjects: Materials Science
- All Subjects: Mechanical Engineering
- Creators: Alford, Terry
- Creators: Herrmann, Marcus
Description
The atomization of a liquid jet by a high speed cross-flowing gas has many applications such as gas turbines and augmentors. The mechanisms by which the liquid jet initially breaks up, however, are not well understood. Experimental studies suggest the dependence of spray properties on operating conditions and nozzle geom- etry. Detailed numerical simulations can offer better understanding of the underlying physical mechanisms that lead to the breakup of the injected liquid jet. In this work, detailed numerical simulation results of turbulent liquid jets injected into turbulent gaseous cross flows for different density ratios is presented. A finite volume, balanced force fractional step flow solver to solve the Navier-Stokes equations is employed and coupled to a Refined Level Set Grid method to follow the phase interface. To enable the simulation of atomization of high density ratio fluids, we ensure discrete consistency between the solution of the conservative momentum equation and the level set based continuity equation by employing the Consistent Rescaled Momentum Transport (CRMT) method. The impact of different inflow jet boundary conditions on different jet properties including jet penetration is analyzed and results are compared to those obtained experimentally by Brown & McDonell(2006). In addition, instability analysis is performed to find the most dominant insta- bility mechanism that causes the liquid jet to breakup. Linear instability analysis is achieved using linear theories for Rayleigh-Taylor and Kelvin- Helmholtz instabilities and non-linear analysis is performed using our flow solver with different inflow jet boundary conditions.
ContributorsGhods, Sina (Author) / Herrmann, Marcus (Thesis advisor) / Squires, Kyle (Committee member) / Chen, Kangping (Committee member) / Huang, Huei-Ping (Committee member) / Tang, Wenbo (Committee member) / Arizona State University (Publisher)
Created2013
Description
Microwave dielectrics are widely used to make resonators and filters in telecommunication systems. The production of thin films with high dielectric constant and low loss could potentially enable a marked reduction in the size of devices and systems. However, studies of these materials in thin film form are very sparse. In this research, experiments were carried out on practical high-performance dielectrics including ZrTiO4-ZnNb2O6 (ZTZN) and Ba(Co,Zn)1/3Nb2/3O3 (BCZN) with high dielectric constant and low loss tangent. Thin films were deposited by laser ablation on various substrates, with a systematical study of growth conditions like substrate temperature, oxygen pressure and annealing to optimize the film quality, and the compositional, microstructural, optical and electric properties were characterized. The deposited ZTZN films were randomly oriented polycrystalline on Si substrate and textured on MgO substrate with a tetragonal lattice change at elevated temperature. The BCZN films deposited on MgO substrate showed superior film quality relative to that on other substrates, which grow epitaxially with an orientation of (001) // MgO (001) and (100) // MgO (100) when substrate temperature was above 500 oC. In-situ annealing at growth temperature in 200 mTorr oxygen pressure was found to enhance the quality of the films, reducing the peak width of the X-ray Diffraction (XRD) rocking curve to 0.53o and the χmin of channeling Rutherford Backscattering Spectrometry (RBS) to 8.8% when grown at 800oC. Atomic Force Microscopy (AFM) was used to study the topography and found a monotonic decrease in the surface roughness when the growth temperature increased. Optical absorption and transmission measurements were used to determine the energy bandgap and the refractive index respectively. A low-frequency dielectric constant of 34 was measured using a planar interdigital measurement structure. The resistivity of the film is ~3×1010 ohm·cm at room temperature and has an activation energy of thermal activated current of 0.66 eV.
ContributorsLi, You (Author) / Newman, Nathan (Thesis advisor) / Alford, Terry (Committee member) / Singh, Rakesh (Committee member) / Arizona State University (Publisher)
Created2013
Description
Carrier lifetime is one of the few parameters which can give information about the low defect densities in today's semiconductors. In principle there is no lower limit to the defect density determined by lifetime measurements. No other technique can easily detect defect densities as low as 10-9 - 10-10 cm-3 in a simple, contactless room temperature measurement. However in practice, recombination lifetime τr measurements such as photoconductance decay (PCD) and surface photovoltage (SPV) that are widely used for characterization of bulk wafers face serious limitations when applied to thin epitaxial layers, where the layer thickness is smaller than the minority carrier diffusion length Ln. Other methods such as microwave photoconductance decay (µ-PCD), photoluminescence (PL), and frequency-dependent SPV, where the generated excess carriers are confined to the epitaxial layer width by using short excitation wavelengths, require complicated configuration and extensive surface passivation processes that make them time-consuming and not suitable for process screening purposes. Generation lifetime τg, typically measured with pulsed MOS capacitors (MOS-C) as test structures, has been shown to be an eminently suitable technique for characterization of thin epitaxial layers. It is for these reasons that the IC community, largely concerned with unipolar MOS devices, uses lifetime measurements as a "process cleanliness monitor." However when dealing with ultraclean epitaxial wafers, the classic MOS-C technique measures an effective generation lifetime τg eff which is dominated by the surface generation and hence cannot be used for screening impurity densities. I have developed a modified pulsed MOS technique for measuring generation lifetime in ultraclean thin p/p+ epitaxial layers which can be used to detect metallic impurities with densities as low as 10-10 cm-3. The widely used classic version has been shown to be unable to effectively detect such low impurity densities due to the domination of surface generation; whereas, the modified version can be used suitably as a metallic impurity density monitoring tool for such cases.
ContributorsElhami Khorasani, Arash (Author) / Alford, Terry (Thesis advisor) / Goryll, Michael (Committee member) / Bertoni, Mariana (Committee member) / Arizona State University (Publisher)
Created2013
Description
Ball Grid Array (BGA) using lead-free or lead-rich solder materials are widely used as Second Level Interconnects (SLI) in mounting packaged components to the printed circuit board (PCB). The reliability of these solder joints is of significant importance to the performance of microelectronics components and systems. Product design/form-factor, solder material, manufacturing process, use condition, as well as, the inherent variabilities present in the system, greatly influence product reliability. Accurate reliability analysis requires an integrated approach to concurrently account for all these factors and their synergistic effects. Such an integrated and robust methodology can be used in design and development of new and advanced microelectronics systems and can provide significant improvement in cycle-time, cost, and reliability. IMPRPK approach is based on a probabilistic methodology, focusing on three major tasks of (1) Characterization of BGA solder joints to identify failure mechanisms and obtain statistical data, (2) Finite Element analysis (FEM) to predict system response needed for life prediction, and (3) development of a probabilistic methodology to predict the reliability, as well as, the sensitivity of the system to various parameters and the variabilities. These tasks and the predictive capabilities of IMPRPK in microelectronic reliability analysis are discussed.
ContributorsFallah-Adl, Ali (Author) / Tasooji, Amaneh (Thesis advisor) / Krause, Stephen (Committee member) / Alford, Terry (Committee member) / Jiang, Hanqing (Committee member) / Mahajan, Ravi (Committee member) / Arizona State University (Publisher)
Created2013
Description
The heat transfer enhancements available from expanding the cross-section of a boiling microchannel are explored analytically and experimentally. Evaluation of the literature on critical heat flux in flow boiling and associated pressure drop behavior is presented with predictive critical heat flux (CHF) and pressure drop correlations. An optimum channel configuration allowing maximum CHF while reducing pressure drop is sought. A perturbation of the channel diameter is employed to examine CHF and pressure drop relationships from the literature with the aim of identifying those adequately general and suitable for use in a scenario with an expanding channel. Several CHF criteria are identified which predict an optimizable channel expansion, though many do not. Pressure drop relationships admit improvement with expansion, and no optimum presents itself. The relevant physical phenomena surrounding flow boiling pressure drop are considered, and a balance of dimensionless numbers is presented that may be of qualitative use. The design, fabrication, inspection, and experimental evaluation of four copper microchannel arrays of different channel expansion rates with R-134a refrigerant is presented. Optimum rates of expansion which maximize the critical heat flux are considered at multiple flow rates, and experimental results are presented demonstrating optima. The effect of expansion on the boiling number is considered, and experiments demonstrate that expansion produces a notable increase in the boiling number in the region explored, though no optima are observed. Significant decrease in the pressure drop across the evaporator is observed with the expanding channels, and no optima appear. Discussion of the significance of this finding is presented, along with possible avenues for future work.
ContributorsMiner, Mark (Author) / Phelan, Patrick E (Thesis advisor) / Baer, Steven (Committee member) / Chamberlin, Ralph (Committee member) / Chen, Kangping (Committee member) / Herrmann, Marcus (Committee member) / Arizona State University (Publisher)
Created2013
Description
Increasing computational demands in data centers require facilities to operate at higher ambient temperatures and at higher power densities. Conventionally, data centers are cooled with electrically-driven vapor-compressor equipment. This paper proposes an alternative data center cooling architecture that is heat-driven. The source is heat produced by the computer equipment. This dissertation details experiments investigating the quantity and quality of heat that can be captured from a liquid-cooled microprocessor on a computer server blade from a data center. The experiments involve four liquid-cooling setups and associated heat-extraction, including a radical approach using mineral oil. The trials examine the feasibility of using the thermal energy from a CPU to drive a cooling process. Uniquely, the investigation establishes an interesting and useful relationship simultaneously among CPU temperatures, power, and utilization levels. In response to the system data, this project explores the heat, temperature and power effects of adding insulation, varying water flow, CPU loading, and varying the cold plate-to-CPU clamping pressure. The idea is to provide an optimal and steady range of temperatures necessary for a chiller to operate. Results indicate an increasing relationship among CPU temperature, power and utilization. Since the dissipated heat can be captured and removed from the system for reuse elsewhere, the need for electricity-consuming computer fans is eliminated. Thermocouple readings of CPU temperatures as high as 93°C and a calculated CPU thermal energy up to 67Wth show a sufficiently high temperature and thermal energy to serve as the input temperature and heat medium input to an absorption chiller. This dissertation performs a detailed analysis of the exergy of a processor and determines the maximum amount of energy utilizable for work. Exergy as a source of realizable work is separated into its two contributing constituents: thermal exergy and informational exergy. The informational exergy is that usable form of work contained within the most fundamental unit of information output by a switching device within a CPU. Exergetic thermal, informational and efficiency values are calculated and plotted for our particular CPU, showing how the datasheet standards compare with experimental values. The dissertation concludes with a discussion of the work's significance.
ContributorsHaywood, Anna (Author) / Phelan, Patrick E (Thesis advisor) / Herrmann, Marcus (Committee member) / Gupta, Sandeep (Committee member) / Trimble, Steve (Committee member) / Myhajlenko, Stefan (Committee member) / Arizona State University (Publisher)
Created2014
Description
The objective of this research is to develop methods for generating the Tolerance-Map for a line-profile that is specified by a designer to control the geometric profile shape of a surface. After development, the aim is to find one that can be easily implemented in computer software using existing libraries. Two methods were explored: the parametric modeling method and the decomposed modeling method. The Tolerance-Map (T-Map) is a hypothetical point-space, each point of which represents one geometric variation of a feature in its tolerance-zone. T-Maps have been produced for most of the tolerance classes that are used by designers, but, prior to the work of this project, the method of construction required considerable intuitive input, rather than being based primarily on automated computer tools. Tolerances on line-profiles are used to control cross-sectional shapes of parts, such as every cross-section of a mildly twisted compressor blade. Such tolerances constrain geometric manufacturing variations within a specified two-dimensional tolerance-zone. A single profile tolerance may be used to control position, orientation, and form of the cross-section. Four independent variables capture all of the profile deviations: two independent translations in the plane of the profile, one rotation in that plane, and the size-increment necessary to identify one of the allowable parallel profiles. For the selected method of generation, the line profile is decomposed into three types of segments, a primitive T-Map is produced for each segment, and finally the T-Maps from all the segments are combined to obtain the T-Map for the given profile. The types of segments are the (straight) line-segment, circular arc-segment, and the freeform-curve segment. The primitive T-Maps are generated analytically, and, for freeform-curves, they are built approximately with the aid of the computer. A deformation matrix is used to transform the primitive T-Maps to a single coordinate system for the whole profile. The T-Map for the whole line profile is generated by the Boolean intersection of the primitive T-Maps for the individual profile segments. This computer-implemented method can generate T-Maps for open profiles, closed ones, and those containing concave shapes.
ContributorsHe, Yifei (Author) / Davidson, Joseph (Thesis advisor) / Shah, Jami (Committee member) / Herrmann, Marcus (Committee member) / Arizona State University (Publisher)
Created2013
Description
ABSTRACT Along with the fast development of science and technology, the studied materials are becoming more complicated and smaller. All these achievements have advanced with the fast development of powerful tools currently, such as Scanning electron microscopy (SEM), Focused Ion Beam (FIB), Transmission electron microscopy (TEM), Energy dispersive X-ray spectroscopy (EDX), Electron energy loss spectroscopy (EELS) and so on. SiTiO3 thin film, which is grown on Si (100) single crystals, attracts a lot of interest in its structural and electronic properties close to its interface. Valence EELS is used to investigate the Plasmon excitations of the ultrathin SrTiO3 thin film which is sandwiched between amorphous Si and crystalline Si layers. On the other hand, theoretical simulations based on dielectric functions have been done to interpret the experimental results. Our findings demonstrate the value of valence electron energy-loss spectroscopy in detecting a local change in the effective electron mass. Recently it is reported that ZnO-LiYbO2 hybrid phosphor is an efficient UV-infrared convertor for silicon solar cell but the mechanism is still not very clear. The microstructure of Li and Yb co-doped ZnO has been studied by SEM and EDX, and our results suggest that a reaction (or diffusion) zone is very likely to exist between LiYbO2 and ZnO. Such diffusion regions may be responsible for the enhanced infrared emission in the Yb and Li co-doped ZnO. Furthermore, to help us study the diffusion zone under TEM in future, the radiation damage on synthesized LiYbO2 has been studied at first, and then the electronic structure of the synthesized LiYbO2 is compared with Yb2O3 experimentally and theoretically, by EELS and FEFF8 respectively.
ContributorsYang, Bo (Author) / Alford, Terry (Thesis advisor) / Jiang, Nan (Committee member) / Theodore, N. David (Committee member) / Arizona State University (Publisher)
Created2013
Description
Organic optoelectronic devices have remained a research topic of great interest over the past two decades, particularly in the development of efficient organic photovoltaics (OPV) and organic light emitting diodes (OLED). In order to improve the efficiency, stability, and materials variety for organic optoelectronic devices a number of emitting materials, absorbing materials, and charge transport materials were developed and employed in a device setting. Optical, electrical, and photophysical studies of the organic materials and their corresponding devices were thoroughly carried out. Two major approaches were taken to enhance the efficiency of small molecule based OPVs: developing material with higher open circuit voltages or improved device structures which increased short circuit current. To explore the factors affecting the open circuit voltage (VOC) in OPVs, molecular structures were modified to bring VOC closer to the effective bandgap, ∆EDA, which allowed the achievement of 1V VOC for a heterojunction of a select Ir complex with estimated exciton energy of only 1.55eV. Furthermore, the development of anode interfacial layer for exciton blocking and molecular templating provide a general approach for enhancing the short circuit current. Ultimately, a 5.8% PCE was achieved in a single heterojunction of C60 and a ZnPc material prepared in a simple, one step, solvent free, synthesis. OLEDs employing newly developed deep blue emitters based on cyclometalated complexes were demonstrated. Ultimately, a peak EQE of 24.8% and nearly perfect blue emission of (0.148,0.079) was achieved from PtON7dtb, which approaches the maximum attainable performance from a blue OLED. Furthermore, utilizing the excimer formation properties of square-planar Pt complexes, highly efficient and stable white devices employing a single emissive material were demonstrated. A peak EQE of over 20% for pure white color (0.33,0.33) and 80 CRI was achieved with the tridentate Pt complex, Pt-16. Furthermore, the development of a series of tetradentate Pt complexes yielded highly efficient and stable single doped white devices due to their halogen free tetradentate design. In addition to these benchmark achievements, the systematic molecular modification of both emissive and absorbing materials provides valuable structure-property relationship information that should help guide further developments in the field.
ContributorsFleetham, Tyler Blain (Author) / Li, Jian (Thesis advisor) / Alford, Terry (Committee member) / Adams, James (Committee member) / Arizona State University (Publisher)
Created2014
Description
Multi-pulse particle tracking velocimetry (multi-pulse PTV) is a recently proposed flow measurement technique aiming to improve the performance of conventional PTV/ PIV. In this work, multi-pulse PTV is assessed based on PTV simulations in terms of spatial resolution, velocity measurement accuracy and the capability of acceleration measurement. The errors of locating particles, velocity measurement and acceleration measurement are analytically calculated and compared among quadruple-pulse, triple-pulse and dual-pulse PTV. The optimizations of triple-pulse and quadruple-pulse PTV are discussed, and criteria are developed to minimize the combined error in position, velocity and acceleration. Experimentally, the velocity and acceleration fields of a round impinging air jet are measured to test the triple-pulse technique. A high speed beam-splitting camera and a custom 8-pulsed laser system are utilized to achieve good timing flexibility and temporal resolution. A new method to correct the registration error between CCDs is also presented. Consequently, the velocity field shows good consistency between triple-pulse and dual-pulse measurements. The mean acceleration profile along the centerline of the jet is used as the ground truth for the verification of the triple-pulse PIV measurements of the acceleration fields. The instantaneous acceleration field of the jet is directly measured by triple-pulse PIV and presented. Accelerations up to 1,000 g's are measured in these experiments.
ContributorsDing, Liuyang (Author) / Adrian, Ronald J. (Thesis advisor) / Herrmann, Marcus (Committee member) / Huang, Huei-Ping (Committee member) / Arizona State University (Publisher)
Created2014