Matching Items (7)
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- All Subjects: pmc
- All Subjects: Radiation
- Creators: Kozicki, Michael
- Member of: Theses and Dissertations
Description
Microwave (MW), thermal, and ultraviolet (UV) annealing were used to explore the response of Ag structures on a Ge-Se chalcogenide glass (ChG) thin film as flexible radiation sensors, and Te-Ti chalcogenide thin films as a material for diffusion barriers in microelectronics devices and processing of metallized Cu. Flexible resistive radiation sensors consisting of Ag electrodes on a Ge20Se80 ChG thin film and polyethylene naphthalate substrate were exposed to UV radiation. The sensors were mounted on PVC tubes of varying radii to induce bending strains and annealed under ambient conditions up to 150 oC. Initial sensor resistance was measured to be ~1012 Ω; after exposure to UV radiation, the resistance was ~104 Ω. Bending strain and low temperature annealing had no significant effect on the resistance of the sensors. Samples of Cu on Te-Ti thin films were annealed in vacuum for up to 30 minutes and were stable up to 500 oC as revealed using Rutherford backscattering spectrometry (RBS) and four-point-probe analysis. X-ray diffractometry (XRD) indicates Cu grain growth up to 500 oC and phase instability of the Te-Ti barrier at 600 oC. MW processing was performed in a 2.45-GHz microwave cavity on Cu/Te-Ti films for up to 30 seconds to induce oxide growth. Using a calibrated pyrometer above the sample, the temperature of the MW process was measured to be below a maximum of 186 oC. Four-point-probe analysis shows an increase in resistance with an increase in MW time. XRD indicates growth of CuO on the sample surface. RBS suggests oxidation throughout the Te-Ti film. Additional samples were exposed to 907 J/cm2 UV radiation in order to ensure other possible electromagnetically induced mechanisms were not active. There were no changes observed using XRD, RBS or four point probing.
ContributorsRoos, Benjamin, 1990- (Author) / Alford, Terry L. (Thesis advisor) / Theodore, David (Committee member) / Kozicki, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
Nonvolatile memory (NVM) technologies have been an integral part of electronic systems for the past 30 years. The ideal non-volatile memory have minimal physical size, energy usage, and cost while having maximal speed, capacity, retention time, and radiation hardness. A promising candidate for next-generation memory is ion-conducting bridging RAM which is referred to as programmable metallization cell (PMC), conductive bridge RAM (CBRAM), or electrochemical metallization memory (ECM), which is likely to surpass flash memory in all the ideal memory characteristics. A comprehensive physics-based model is needed to completely understand PMC operation and assist in design optimization.
To advance the PMC modeling effort, this thesis presents a precise physical model parameterizing materials associated with both ion-rich and ion-poor layers of the PMC's solid electrolyte, so that captures the static electrical behavior of the PMC in both its low-resistance on-state (LRS) and high resistance off-state (HRS). The experimental data is measured from a chalcogenide glass PMC designed and manufactured at ASU. The static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film is characterized and modeled using three dimensional simulation code written in Silvaco Atlas finite element analysis software. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities.
The sensitivity of our modeled PMC to the variation of its prominent achieved material parameters is examined on the HRS and LRS impedance behavior.
The obtained accurate set of material parameters for both Ag-rich and Ag-poor ChG systems and process variation verification on electrical characteristics enables greater fidelity in PMC device simulation, which significantly enhances our ability to understand the underlying physics of ChG-based resistive switching memory.
To advance the PMC modeling effort, this thesis presents a precise physical model parameterizing materials associated with both ion-rich and ion-poor layers of the PMC's solid electrolyte, so that captures the static electrical behavior of the PMC in both its low-resistance on-state (LRS) and high resistance off-state (HRS). The experimental data is measured from a chalcogenide glass PMC designed and manufactured at ASU. The static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film is characterized and modeled using three dimensional simulation code written in Silvaco Atlas finite element analysis software. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities.
The sensitivity of our modeled PMC to the variation of its prominent achieved material parameters is examined on the HRS and LRS impedance behavior.
The obtained accurate set of material parameters for both Ag-rich and Ag-poor ChG systems and process variation verification on electrical characteristics enables greater fidelity in PMC device simulation, which significantly enhances our ability to understand the underlying physics of ChG-based resistive switching memory.
ContributorsRajabi, Saba (Author) / Barnaby, Hugh (Thesis advisor) / Kozicki, Michael (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2014
Description
Programmable Metallization Cell (PMC) is a technology platform which utilizes mass transport in solid or liquid electrolyte coupled with electrochemical (redox) reactions to form or remove nanoscale metallic electrodeposits on or in the electrolyte. The ability to redistribute metal mass and form metallic nanostructure in or on a structure in situ, via the application of a bias on laterally placed electrodes, creates a large number of promising applications. A novel PMC-based lateral microwave switch was fabricated and characterized for use in microwave systems. It has demonstrated low insertion loss, high isolation, low voltage operation, low power and low energy consumption, and excellent linearity. Due to its non-volatile nature the switch operates with fewer biases and its simple planar geometry makes possible innovative device structures which can be potentially integrated into microwave power distribution circuits. PMC technology is also used to develop lateral dendritic metal electrodes. A lateral metallic dendritic network can be grown in a solid electrolyte (GeSe) or electrodeposited on SiO2 or Si using a water-mediated method. These dendritic electrodes grown in a solid electrolyte (GeSe) can be used to lower resistances for applications like self-healing interconnects despite its relatively low light transparency; while the dendritic electrodes grown using water-mediated method can be potentially integrated into solar cell applications, like replacing conventional Ag screen-printed top electrodes as they not only reduce resistances but also are highly transparent. This research effort also laid a solid foundation for developing dendritic plasmonic structures. A PMC-based lateral dendritic plasmonic structure is a device that has metallic dendritic networks grown electrochemically on SiO2 with a thin layer of surface metal nanoparticles in liquid electrolyte. These structures increase the distribution of particle sizes by connecting pre-deposited Ag nanoparticles into fractal structures and result in three significant effects, resonance red-shift, resonance broadening and resonance enhancement, on surface plasmon resonance for light trapping simultaneously, which can potentially enhance thin film solar cells' performance at longer wavelengths.
ContributorsRen, Minghan (Author) / Kozicki, Michael (Thesis advisor) / Schroder, Dieter (Committee member) / Roedel, Ronald (Committee member) / Barnaby, Hugh (Committee member) / Arizona State University (Publisher)
Created2011
Description
In competitive Taekwondo, Electronic Body Protectors (EBPs) are used to register hits made by players during sparring. EBPs are comprised of three main components: chest guard, foot sock, and headgear. This equipment interacts with each other through the use of magnets, electric sensors, transmitters, and a receiver. The receiver is connected to a computer programmed with software to process signals from the transmitter and determine whether or not a competitor scored a point. The current design of EBPs, however, have numerous shortcomings, including sensing false positives, failing to register hits, costing too much, and relying on human judgment. This thesis will thoroughly delineate the operation of the current EBPs used and discuss research performed in order to eliminate these weaknesses.
ContributorsSpell, Valerie Anne (Author) / Kozicki, Michael (Thesis director) / Kitchen, Jennifer (Committee member) / Electrical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2016-05
Description
In collaboration with Moog Broad Reach and Arizona State University, a<br/>team of five undergraduate students designed a hardware design solution for<br/>protecting flash memory data in a spaced-based radioactive environment. Team<br/>Aegis have been working on the research, design, and implementation of a<br/>Verilog- and Python-based error correction code using a Reed-Solomon method<br/>to identify bit changes of error code. For an additional senior design project, a<br/>Python code was implemented that runs statistical analysis to identify whether<br/>the error correction code is more effective than a triple-redundancy check as well<br/>as determining if the presence of errors can be modeled by a regression model.
ContributorsSalls, Demetra Helen (Author) / Kozicki, Michael (Thesis director) / Hodge, Chris (Committee member) / Electrical Engineering Program (Contributor, Contributor) / School of Mathematical and Statistical Sciences (Contributor) / Barrett, The Honors College (Contributor)
Created2021-05
Description
Interposers have been used in the system packaging industry for years. They have advanced from basic devices used for connection to providing new opportunities for System-in-Package and System-on-Chip architectures. Currently interposers cannot be reconfigured. Systems may implement extra input-output connections for hard reconfiguration. However, programmable metallization cells (PMC) offer the opportunity to change this. PMCs offer reliable and fast switching that has the potential to be used as resistive memory cells as well. PMCs operate by growing a metal filament from the device cathode to its anode through a solid electrolyte by applying a voltage. By reversing the voltage bias, the filament will retract. The PMC’s electrolyte can also be made from a range of materials being chalcogen or oxide based, allowing for integration in a variety of systems. By utilizing PMCs in an interposer to create a “smart interposer,” it would be possible to create easily reconfigurable systems. This project investigated how PMCs function in a lab setting. By using a probe station, the current-voltage characteristics were generated for a variety of limiting current values. The PMC on and off state resistances were extrapolated for further understanding of its switch function. In addition, works-like prototypes were developed to show the function a smart interposer. In these prototypes, transistors or relays were used as the switching mechanism in place of the PMCs. The final works-like prototype demonstrated how a smart interposer might function by using a switching mechanism to swap between half adder and full adder outputs for the same inputs.
ContributorsSpiker, Bradley Dahlton (Author) / Kozicki, Michael (Thesis director) / Gonzalez Velo, Yago (Committee member) / Electrical Engineering Program (Contributor, Contributor) / Barrett, The Honors College (Contributor)
Created2020-05
Description
When exposed to radiation, many electronic components become damaged and operate incorrectly. Making sure these components are resistant to radiation effects is especially important for components used in space flight operations. At low dose rates, a phenomenon known as the enhanced low dose rate sensitivity (ELDRS) effect causes an increase in current within linear bipolar circuits. This increase in current is not desirable for space flight operations. Correctly selecting radiation hardened components or figuring out how to deal with the effects for space operation is important, however, radiation testing each component is very expensive and time consuming. To further the future of space travel, a more efficient way of testing is highly desired by the space industry.
A low-cost and time-efficient solution is the IMPACT tool. The Multiscale Tool for Modeling Radiation Effects in Linear Bipolar Circuits project aims to improve the existing IMPACT tool for radiation simulation. This tool contains a database of commonly used linear bipolar circuits and allows the user to model the radiation effects. Currently the tool is not very easy to use and the circuit database is limited. The team’s goal and overall outcome of the project is to deliver the IMPACT tool with a user-friendly interface and an expanded circuit database. The team is using multiple tools to improve the overall appearance of the IMPACT tool and running simulations to collect any necessary data for the database expansion.
In our thesis, Kerri and Kylie are using LTSpice simulations to expand the database. Cheyenne is using TCAD modeling to create TCAD models of transistors and compare them with her other group member’s simulations.
ContributorsCook, Cheyenne (Author) / Welch, Kerri (Co-author) / Welch, Kylie (Co-author) / Barnaby, Hugh (Thesis director) / Kozicki, Michael (Committee member) / Barrett, The Honors College (Contributor) / Electrical Engineering Program (Contributor)
Created2022-05