Matching Items (9)
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- All Subjects: Integrated circuits
- All Subjects: efficiency
- Creators: Kitchen, Jennifer
- Member of: ASU Electronic Theses and Dissertations
- Status: Published
Description
Efficiency of components is an ever increasing area of importance to portable applications, where a finite battery means finite operating time. Higher efficiency devices need to be designed that don't compromise on the performance that the consumer has come to expect. Class D amplifiers deliver on the goal of increased efficiency, but at the cost of distortion. Class AB amplifiers have low efficiency, but high linearity. By modulating the supply voltage of a Class AB amplifier to make a Class H amplifier, the efficiency can increase while still maintaining the Class AB level of linearity. A 92dB Power Supply Rejection Ratio (PSRR) Class AB amplifier and a Class H amplifier were designed in a 0.24um process for portable audio applications. Using a multiphase buck converter increased the efficiency of the Class H amplifier while still maintaining a fast response time to respond to audio frequencies. The Class H amplifier had an efficiency above the Class AB amplifier by 5-7% from 5-30mW of output power without affecting the total harmonic distortion (THD) at the design specifications. The Class H amplifier design met all design specifications and showed performance comparable to the designed Class AB amplifier across 1kHz-20kHz and 0.01mW-30mW. The Class H design was able to output 30mW into 16Ohms without any increase in THD. This design shows that Class H amplifiers merit more research into their potential for increasing efficiency of audio amplifiers and that even simple designs can give significant increases in efficiency without compromising linearity.
ContributorsPeterson, Cory (Author) / Bakkaloglu, Bertan (Thesis advisor) / Barnaby, Hugh (Committee member) / Kiaei, Sayfe (Committee member) / Arizona State University (Publisher)
Created2013
Description
Isolated DC/DC converters are used to provide electrical isolation between two supply domain systems. A fully integrated isolated DC/DC converter having no board-level components and fabricated using standard integrated circuits (IC) process is highly desirable in order to increase the system reliability and reduce costs. The isolation between the low-voltage side and high-voltage side of the converter is realized by a transformer that transfers energy while blocking the DC loop. The resonant mode power oscillator is used to enable high efficiency power transfer. The on-chip transformer is expected to have high coil inductance, high quality factors and high coupling coefficient to reduce the loss in the oscillation. The performance of a transformer is highly dependent on the vertical structure, horizontal geometry and other indispensable structures that make it compatible with the IC process such as metal fills and patterned ground shield (PGS). With the help of three-dimensional (3-D) electro-magnetic (EM) simulation software, the 3-D transformer model is simulated and the simulation result is got with high accuracy.
In this thesis an on-chip transformer for a fully integrated DC/DC converter using standard IC process is developed. Different types of transformers are modeled and simulated in HFSS. The performances are compared to select the optimum design. The effects of the additional structures including PGS and metal fills are also simulated. The transformer is tested with a network analyzer and the testing results show a good consistency with the simulation results when taking the chip traces, printed circuit board (PCB) traces, bond wires and SMA connectors into account.
In this thesis an on-chip transformer for a fully integrated DC/DC converter using standard IC process is developed. Different types of transformers are modeled and simulated in HFSS. The performances are compared to select the optimum design. The effects of the additional structures including PGS and metal fills are also simulated. The transformer is tested with a network analyzer and the testing results show a good consistency with the simulation results when taking the chip traces, printed circuit board (PCB) traces, bond wires and SMA connectors into account.
ContributorsZhao, Yao (Author) / Bakkaloglu, Bertan (Thesis advisor) / Kiaei, Sayfe (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2014
Description
Negative Bias Temperature Instability (NBTI) is commonly seen in p-channel transistors under negative gate voltages at an elevated temperature. The interface traps, oxide traps and NBTI mechanisms are discussed and their effect on circuit degradation and results are discussed. This thesis focuses on developing a model for simulating impact of NBTI effects at circuit level. The model mimics the effects of degradation caused by the defects.
The NBTI model developed in this work is validated and sanity checked by using the simulation data from silvaco and gives excellent results. Furthermore the susceptibility of CMOS circuits such as the CMOS inverter, and a ring oscillator to NBTI is investigated. The results show that the oscillation frequency of a ring oscillator decreases and the SET pulse broadens with the NBTI.
The NBTI model developed in this work is validated and sanity checked by using the simulation data from silvaco and gives excellent results. Furthermore the susceptibility of CMOS circuits such as the CMOS inverter, and a ring oscillator to NBTI is investigated. The results show that the oscillation frequency of a ring oscillator decreases and the SET pulse broadens with the NBTI.
ContributorsPadala, Sudheer (Author) / Barnaby, Hugh (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2014
Description
Class D Amplifiers are widely used in portable systems such as mobile phones to achieve high efficiency. The demands of portable electronics for low power consumption to extend battery life and reduce heat dissipation mandate efficient, high-performance audio amplifiers. The high efficiency of Class D amplifiers (CDAs) makes them particularly attractive for portable applications. The Digital class D amplifier is an interesting solution to increase the efficiency of embedded systems. However, this solution is not good enough in terms of PWM stage linearity and power supply rejection. An efficient control is needed to correct the error sources in order to get a high fidelity sound quality in the whole audio range of frequencies. A fundamental analysis on various error sources due to non idealities in the power stage have been discussed here with key focus on Power supply perturbations driving the Power stage of a Class D Audio Amplifier. Two types of closed loop Digital Class D architecture for PSRR improvement have been proposed and modeled. Double sided uniform sampling modulation has been used. One of the architecture uses feedback around the power stage and the second architecture uses feedback into digital domain. Simulation & experimental results confirm that the closed loop PSRR & PS-IMD improve by around 30-40 dB and 25 dB respectively.
ContributorsChakraborty, Bijeta (Author) / Bakkaloglu, Bertan (Thesis advisor) / Garrity, Douglas (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2012
Description
Power Management circuits are employed in almost all electronic equipment and they have energy storage elements (capacitors and inductors) as building blocks along with other active circuitry. Power management circuits employ feedback to achieve good load and line regulation. The feedback loop is designed at an operating point and component values are chosen to meet that design requirements. But the capacitors and inductors are subject to variations due to temperature, aging and load stress. Due to these variations, the feedback loop can cross its robustness margins and can lead to degraded performance and potential instability. Another issue in power management circuits is the measurement of their frequency response for stability assessment. The standard techniques used in production test environment require expensive measurement equipment (Network Analyzer) and time. These two issues of component variations and frequency response measurement can be addressed if the frequency response of the power converter is used as measure of component (capacitor and inductor) variations. So, a single solution of frequency response measurement solves both the issues. This work examines system identification (frequency response measurement) of power management circuits based on cross correlation technique and proposes the use of switched capacitor correlator for this purpose. A switched capacitor correlator has been designed and used in the system identification of Linear and Switching regulators. The obtained results are compared with the standard frequency response measurement methods of power converters.
ContributorsMalladi, Venkata Naga Koushik (Author) / Bakkaloglu, Bertan (Thesis advisor) / Kitchen, Jennifer (Committee member) / Ogras, Umit Y. (Committee member) / Arizona State University (Publisher)
Created2015
Description
The continuing advancement of modulation standards with newer generations of cellular technology, promises ever increasing data rate and bandwidth efficiency. However, these modulation schemes present high peak to average power ratio (PAPR) even after applying crest factor reduction. Being the most power-hungry component in the radio frequency (RF) transmitter, power amplifiers (PA) for infrastructure applications, need to operate efficiently at the presence of these high PAPR signals while maintaining reasonable linearity performance which could be improved by moderate digital pre-distortion (DPD) techniques. This strict requirement of operating efficiently at average power level while being capable of delivering the peak power, made the load modulated PAs such as Doherty PA, Outphasing PA, various Envelope Tracking PAs, Polar transmitters and most recently the load modulated balanced PA, the prime candidates for such application. However, due to its simpler architecture and ability to deliver RF power efficiently with good linearity performance has made Doherty PA (DPA) the most popular solution and has been deployed almost exclusively for wireless infrastructure application all over the world.
Although DPAs has been very successful at amplifying the high PAPR signals, most recent advancements in cellular technology has opted for higher PAPR based signals at wider bandwidth. This lead to increased research and development work to innovate advanced Doherty architectures which are more efficient at back-off (BO) power levels compared to traditional DPAs. In this dissertation, three such advanced Doherty architectures and/or techniques are proposed to achieve high efficiency at further BO power level compared to traditional architecture using symmetrical devices for carrier and peaking PAs. Gallium Nitride (GaN) based high-electron-mobility (HEMT) technology has been used to design and fabricate the DPAs to validate the proposed advanced techniques for higher efficiency with good linearity performance at BO power levels.
Although DPAs has been very successful at amplifying the high PAPR signals, most recent advancements in cellular technology has opted for higher PAPR based signals at wider bandwidth. This lead to increased research and development work to innovate advanced Doherty architectures which are more efficient at back-off (BO) power levels compared to traditional DPAs. In this dissertation, three such advanced Doherty architectures and/or techniques are proposed to achieve high efficiency at further BO power level compared to traditional architecture using symmetrical devices for carrier and peaking PAs. Gallium Nitride (GaN) based high-electron-mobility (HEMT) technology has been used to design and fabricate the DPAs to validate the proposed advanced techniques for higher efficiency with good linearity performance at BO power levels.
ContributorsRuhul Hasin, Muhammad (Author) / Kitchen, Jennifer (Thesis advisor) / Aberle, James T., 1961- (Committee member) / Bakkaloglu, Bertan (Committee member) / Kiaei, Sayfe (Committee member) / Arizona State University (Publisher)
Created2018
Description
A single solar cell provides close to 0.5 V output at its maximum power point, which is very
low for any electronic circuit to operate. To get rid of this problem, traditionally multiple
solar cells are connected in series to get higher voltage. The disadvantage of this approach
is the efficiency loss for partial shading or mismatch. Even as low as 6-7% of shading can
result in more than 90% power loss. Therefore, Maximum Power Point Tracking (MPPT)
at single solar cell level is the most efficient way to extract power from solar cell.
Power Management IC (MPIC) used to extract power from single solar cell, needs to
start at 0.3 V input. MPPT circuitry should be implemented with minimal power and area
overhead. To start the PMIC at 0.3 V, a switch capacitor charge pump is utilized as an
auxiliary start up circuit for generating a regulated 1.8 V auxiliary supply from 0.3 V input.
The auxiliary supply powers up a MPPT converter followed by a regulated converter. At
the start up both the converters operate at 100 kHz clock with 80% duty cycle and system
output voltage starts rising. When the system output crosses 2.7 V, the auxiliary start up
circuit is turned off and the supply voltage for both the converters is derived from the system
output itself. In steady-state condition the system output is regulated to 3.0 V.
A fully integrated analog MPPT technique is proposed to extract maximum power from
the solar cell. This technique does not require Analog to Digital Converter (ADC) and
Digital Signal Processor (DSP), thus reduces area and power overhead. The proposed
MPPT techniques includes a switch capacitor based power sensor which senses current of
boost converter without using any sense resistor. A complete system is designed which
starts from 0.3 V solar cell voltage and provides regulated 3.0 V system output.
low for any electronic circuit to operate. To get rid of this problem, traditionally multiple
solar cells are connected in series to get higher voltage. The disadvantage of this approach
is the efficiency loss for partial shading or mismatch. Even as low as 6-7% of shading can
result in more than 90% power loss. Therefore, Maximum Power Point Tracking (MPPT)
at single solar cell level is the most efficient way to extract power from solar cell.
Power Management IC (MPIC) used to extract power from single solar cell, needs to
start at 0.3 V input. MPPT circuitry should be implemented with minimal power and area
overhead. To start the PMIC at 0.3 V, a switch capacitor charge pump is utilized as an
auxiliary start up circuit for generating a regulated 1.8 V auxiliary supply from 0.3 V input.
The auxiliary supply powers up a MPPT converter followed by a regulated converter. At
the start up both the converters operate at 100 kHz clock with 80% duty cycle and system
output voltage starts rising. When the system output crosses 2.7 V, the auxiliary start up
circuit is turned off and the supply voltage for both the converters is derived from the system
output itself. In steady-state condition the system output is regulated to 3.0 V.
A fully integrated analog MPPT technique is proposed to extract maximum power from
the solar cell. This technique does not require Analog to Digital Converter (ADC) and
Digital Signal Processor (DSP), thus reduces area and power overhead. The proposed
MPPT techniques includes a switch capacitor based power sensor which senses current of
boost converter without using any sense resistor. A complete system is designed which
starts from 0.3 V solar cell voltage and provides regulated 3.0 V system output.
ContributorsSingh, Shrikant (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2015
Description
This thesis describes the design process used in the creation of a two stage cellular power amplifier. A background for understanding amplifier linearity, device properties, and ACLR estimation is provided. An outline of the design goals is given with a focus on linearity with high efficiency. The full design is broken into smaller elements which are discussed in detail. The main contribution of this thesis is the description of a novel interstage matching network topology for increasing efficiency. Ultimately the full amplifier design is simulated and compared to the measured results and design goals. It was concluded that the design was successful, and used in a commercially available product.
ContributorsSpivey, Erin (Author) / Aberle, James T., 1961- (Thesis advisor) / Kitchen, Jennifer (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2012
Description
This dissertation focuses on three different efficiency enhancement methods that are applicable to handset applications. These proposed designs are based on three critical requirements for handset application: 1) Small form factor, 2) CMOS compatibility and 3) high power handling. The three presented methodologies are listed below:
1) A transformer-based power combiner architecture for out-phasing transmitters
2) A current steering DAC-based average power tracking circuit for on-chip power amplifiers (PA)
3) A CMOS-based driver stage for GaN-based switched-mode power amplifiers applicable to fully digital transmitters
This thesis highlights the trends in wireless handsets, the motivates the need for fully-integrated CMOS power amplifier solutions and presents the three novel techniques for reconfigurable and digital CMOS-based PAs. Chapter 3, presents the transformer-based power combiner for out-phasing transmitters. The simulation results reveal that this technique is able to shrink the power combiner area, which is one of the largest parts of the transmitter, by about 50% and as a result, enhances the output power density by 3dB.
The average power tracking technique (APT) integrated with an on-chip CMOS-based power amplifier is explained in Chapter 4. This system is able to achieve up to 32dBm saturated output power with a linear power gain of 20dB in a 45nm CMOS SOI process. The maximum efficiency improvement is about ∆η=15% compared to the same PA without APT. Measurement results show that the proposed method is able to amplify an enhanced-EDGE modulated input signal with a data rate of 70.83kb/sec and generate more than 27dBm of average output power with EVM<5%.
Although small form factor, high battery lifetime, and high volume integration motivate the need for fully digital CMOS transmitters, the output power generated by this type of transmitter is not high enough to satisfy the communication standards. As a result, compound materials such as GaN or GaAs are usually being used in handset applications to increase the output power. Chapter 5 focuses on the analysis and design of two CMOS based driver architectures (cascode and house of cards) for driving a GaN power amplifier. The presented results show that the drivers are able to generate ∆Vout=5V, which is required by the compound transistor, and operate up to 2GHz. Since the CMOS driver is expected to drive an off-chip capacitive load, the interface components, such as bond wires, and decoupling and pad capacitors, play a critical role in the output transient response. Therefore, extensive analysis and simulation results have been done on the interface circuits to investigate their effects on RF transmitter performance. The presented results show that the maximum operating frequency when the driver is connected to a 4pF capacitive load is about 2GHz, which is perfectly matched with the reported values in prior literature.
1) A transformer-based power combiner architecture for out-phasing transmitters
2) A current steering DAC-based average power tracking circuit for on-chip power amplifiers (PA)
3) A CMOS-based driver stage for GaN-based switched-mode power amplifiers applicable to fully digital transmitters
This thesis highlights the trends in wireless handsets, the motivates the need for fully-integrated CMOS power amplifier solutions and presents the three novel techniques for reconfigurable and digital CMOS-based PAs. Chapter 3, presents the transformer-based power combiner for out-phasing transmitters. The simulation results reveal that this technique is able to shrink the power combiner area, which is one of the largest parts of the transmitter, by about 50% and as a result, enhances the output power density by 3dB.
The average power tracking technique (APT) integrated with an on-chip CMOS-based power amplifier is explained in Chapter 4. This system is able to achieve up to 32dBm saturated output power with a linear power gain of 20dB in a 45nm CMOS SOI process. The maximum efficiency improvement is about ∆η=15% compared to the same PA without APT. Measurement results show that the proposed method is able to amplify an enhanced-EDGE modulated input signal with a data rate of 70.83kb/sec and generate more than 27dBm of average output power with EVM<5%.
Although small form factor, high battery lifetime, and high volume integration motivate the need for fully digital CMOS transmitters, the output power generated by this type of transmitter is not high enough to satisfy the communication standards. As a result, compound materials such as GaN or GaAs are usually being used in handset applications to increase the output power. Chapter 5 focuses on the analysis and design of two CMOS based driver architectures (cascode and house of cards) for driving a GaN power amplifier. The presented results show that the drivers are able to generate ∆Vout=5V, which is required by the compound transistor, and operate up to 2GHz. Since the CMOS driver is expected to drive an off-chip capacitive load, the interface components, such as bond wires, and decoupling and pad capacitors, play a critical role in the output transient response. Therefore, extensive analysis and simulation results have been done on the interface circuits to investigate their effects on RF transmitter performance. The presented results show that the maximum operating frequency when the driver is connected to a 4pF capacitive load is about 2GHz, which is perfectly matched with the reported values in prior literature.
ContributorsMoallemi, Soroush (Author) / Kitchen, Jennifer (Thesis advisor) / Kiaei, Sayfe (Committee member) / Bakkaloglu, Bertan (Committee member) / Thornton, Trevor (Committee member) / Arizona State University (Publisher)
Created2019