Matching Items (16)
Filtering by

Clear all filters

149994-Thumbnail Image.png
Description
A distinct characteristic of ferroelectric materials is the existence of a reversible spontaneous polarization with the application of an electric field. The relevant properties ferroelectric lithium niobate surfaces include a low density of defects and external screening of the bound polarization charge. These properties result in unique surface electric field

A distinct characteristic of ferroelectric materials is the existence of a reversible spontaneous polarization with the application of an electric field. The relevant properties ferroelectric lithium niobate surfaces include a low density of defects and external screening of the bound polarization charge. These properties result in unique surface electric field distribution with a strong electric field in the vicinity of domain boundaries, while away from the boundaries, the field decreases rapidly. In this work, ferroelectric lithium niobate (LN) is used as a template to direct the assembly of metallic nanostructures via photo-induced reduction and a substrate for deposition of ZnO semiconducting thin films via plasma enhanced atomic layer deposition (PE-ALD). To understand the mechanism the photo-induced deposition process the following effects were considered: the illumination photon energy and intensity, the polarization screening mechanism of the lithium niobate template and the chemical concentration. Depending on the UV wavelength, variation of Ag deposition rate and boundary nanowire formation are observed and attributed to the unique surface electric field distribution of the polarity patterned template and the penetration depth of UV light. Oxygen implantation is employed to transition the surface from external screening to internal screening, which results in depressed boundary nanowire formation. The ratio of the photon flux and Ag ion flux to the surface determine the deposition pattern. Domain boundary deposition is enhanced with a high photon/Ag ion flux ratio while domain boundary deposition is depressed with a low photon/Ag ion flux ratio. These results also support the photo-induced deposition model where the process is limited by carrier generation, and the cation reduction occurs at the surface. These findings will provide a foundational understanding to employ ferroelectric templates for assembly and patterning of inorganic, organic, biological, and integrated structures. ZnO films deposited on positive and negative domain surfaces of LN demonstrate different I-V curve behavior at different temperatures. At room temperature, ZnO deposited on positive domains exhibits almost two orders of magnitude greater conductance than on negative domains. The conductance of ZnO on positive domains decreases with increasing temperature while the conductance of ZnO on negative domains increases with increasing temperature. The observations are interpreted in terms of the downward or upward band bending at the ZnO/LN interface which is induced by the ferroelectric polarization charge. Possible application of this effect in non-volatile memory devices is proposed for future work.
ContributorsSun, Yang (Author) / Nemanich, Robert (Thesis advisor) / Bennett, Peter (Committee member) / Sukharev, Maxim (Committee member) / Ros, Robert (Committee member) / McCartney, Martha (Committee member) / Arizona State University (Publisher)
Created2011
151415-Thumbnail Image.png
Description
In this dissertation, remote plasma interactions with the surfaces of low-k interlayer dielectric (ILD), Cu and Cu adhesion layers are investigated. The first part of the study focuses on the simultaneous plasma treatment of ILD and chemical mechanical polishing (CMP) Cu surfaces using N2/H2 plasma processes. H atoms and radicals

In this dissertation, remote plasma interactions with the surfaces of low-k interlayer dielectric (ILD), Cu and Cu adhesion layers are investigated. The first part of the study focuses on the simultaneous plasma treatment of ILD and chemical mechanical polishing (CMP) Cu surfaces using N2/H2 plasma processes. H atoms and radicals in the plasma react with the carbon groups leading to carbon removal for the ILD films. Results indicate that an N2 plasma forms an amide-like layer on the surface which apparently leads to reduced carbon abstraction from an H2 plasma process. In addition, FTIR spectra indicate the formation of hydroxyl (Si-OH) groups following the plasma exposure. Increased temperature (380 °C) processing leads to a reduction of the hydroxyl group formation compared to ambient temperature processes, resulting in reduced changes of the dielectric constant. For CMP Cu surfaces, the carbonate contamination was removed by an H2 plasma process at elevated temperature while the C-C and C-H contamination was removed by an N2 plasma process at elevated temperature. The second part of this study examined oxide stability and cleaning of Ru surfaces as well as consequent Cu film thermal stability with the Ru layers. The ~2 monolayer native Ru oxide was reduced after H-plasma processing. The thermal stability or islanding of the Cu film on the Ru substrate was characterized by in-situ XPS. After plasma cleaning of the Ru adhesion layer, the deposited Cu exhibited full coverage. In contrast, for Cu deposition on the Ru native oxide substrate, Cu islanding was detected and was described in terms of grain boundary grooving and surface and interface energies. The thermal stability of 7 nm Ti, Pt and Ru ii interfacial adhesion layers between a Cu film (10 nm) and a Ta barrier layer (4 nm) have been investigated in the third part. The barrier properties and interfacial stability have been evaluated by Rutherford backscattering spectrometry (RBS). Atomic force microscopy (AFM) was used to measure the surfaces before and after annealing, and all the surfaces are relatively smooth excluding islanding or de-wetting phenomena as a cause of the instability. The RBS showed no discernible diffusion across the adhesion layer/Ta and Ta/Si interfaces which provides a stable underlying layer. For a Ti interfacial layer RBS indicates that during 400 °C annealing Ti interdiffuses through the Cu film and accumulates at the surface. For the Pt/Cu system Pt interdiffuion is detected which is less evident than Ti. Among the three adhesion layer candidates, Ru shows negligible diffusion into the Cu film indicating thermal stability at 400 °C.
ContributorsLiu, Xin (Author) / Nemanich, Robert (Thesis advisor) / Chamberlin, Ralph (Committee member) / Chen, Tingyong (Committee member) / Smith, David (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2012
136997-Thumbnail Image.png
Description
In this experiment, an attempt was made to measure the index of refraction of a thin glass microscope slide, with a known thickness of 1.01 mm. A monochromatic laser with wavelength of 532nm was employed to generate the interference pattern through the use of a Michelson interferometer. The slide was

In this experiment, an attempt was made to measure the index of refraction of a thin glass microscope slide, with a known thickness of 1.01 mm. A monochromatic laser with wavelength of 532nm was employed to generate the interference pattern through the use of a Michelson interferometer. The slide was placed in the path of one of the beams. The slide could then be rotated through a series of angles, and, from the resulting changes in the interference pattern, the index of refraction of the slide could be extracted. The index of refraction was found to be 1.5±0.02.
ContributorsSwenson, Jordan (Author) / Sukharev, Maxim (Thesis director) / Bennett, Peter (Committee member) / Barrett, The Honors College (Contributor) / Department of Physics (Contributor)
Created2014-05
131279-Thumbnail Image.png
Description
In this project we are analyzing the diamond-titanium interface as it applies to diamond-based diode devices, including alpha particle, proton, and neutron detectors. This is done through the fabrication of an O-terminated B-doped diamond sample with a 20 Å Ti / 10 Å Pt overlayer which was then annealed and

In this project we are analyzing the diamond-titanium interface as it applies to diamond-based diode devices, including alpha particle, proton, and neutron detectors. This is done through the fabrication of an O-terminated B-doped diamond sample with a 20 Å Ti / 10 Å Pt overlayer which was then annealed and examined via X-ray photoelectron spectroscopy (XPS). It was discovered that after annealing the sample at temperatures ranging from 400 C - 900 C that TiC was not formed at any point during this experiment. Possible reasons for this include a lack of sufficient titanium in order to form TiC and over oxygenating the diamond surface before the metal was deposited.
ContributorsJohnson, Holly (Author) / Zaniewski, Anna (Thesis director) / Nemanich, Robert (Committee member) / Department of Physics (Contributor) / Barrett, The Honors College (Contributor)
Created2020-05
133977-Thumbnail Image.png
Description
Within the context of the Finite-Difference Time-Domain (FDTD) method of simulating interactions between electromagnetic waves and matter, we adapt a known absorbing boundary condition, the Convolutional Perfectly-Matched Layer (CPML) to a background of Drude-dispersive medium. The purpose of this CPML is to terminate the virtual grid of scattering simulations by

Within the context of the Finite-Difference Time-Domain (FDTD) method of simulating interactions between electromagnetic waves and matter, we adapt a known absorbing boundary condition, the Convolutional Perfectly-Matched Layer (CPML) to a background of Drude-dispersive medium. The purpose of this CPML is to terminate the virtual grid of scattering simulations by absorbing all outgoing radiation. In this thesis, we exposit the method of simulation, establish the Perfectly-Matched Layer as a domain which houses a spatial-coordinate transform to the complex plane, construct the CPML in vacuum, adapt the CPML to the Drude medium, and conclude with tests of the adapted CPML for two different scattering geometries.
ContributorsThornton, Brandon Maverick (Author) / Sukharev, Maxim (Thesis director) / Goodnick, Stephen (Committee member) / School of Mathematical and Statistical Sciences (Contributor) / Department of Physics (Contributor) / Barrett, The Honors College (Contributor)
Created2018-05
171570-Thumbnail Image.png
Description
In the developing field of nonlinear plasmonics, it is important to understand the nonlinear responses of the metallic nanostructures. In the present thesis, rigorous electrodynamical simulations based on the fully vectorial three-dimensional nonlinear hydrodynamic Drude model describing metal coupled to Maxwell's equations are performed to investigate linear and nonlinear responses

In the developing field of nonlinear plasmonics, it is important to understand the nonlinear responses of the metallic nanostructures. In the present thesis, rigorous electrodynamical simulations based on the fully vectorial three-dimensional nonlinear hydrodynamic Drude model describing metal coupled to Maxwell's equations are performed to investigate linear and nonlinear responses of the plasmonic materials and their coupling with quantum emitters.The first part of this thesis is devoted to analyzing properties of the localized surface plasmon resonances of metallic nanostructures and their nonlinear optical responses. The behavior of the second harmonic is investigated as a function of various physical parameters at different plasmonic interfaces, revealing highly complex dynamics. By collaborating with several research teams, simulations are proven to be in close agreement with experiments, both quantitative and qualitative. The second part of the thesis explores the strong coupling regime and its influence on the second harmonic generation. Considering plasmonic systems of molecules and periodic nanohole arrays on equal footing in the nonlinear regime is done for the first time. The results obtained are supported by a simple analytical model.
ContributorsDrobnyh, Elena (Author) / Sukharev, Maxim (Thesis advisor) / Schmidt, Kevin (Committee member) / Goodnick, Stephen (Committee member) / Mujica, Vladimiro (Committee member) / Arizona State University (Publisher)
Created2022
Description

In this project, we aim to fabricate PIN structure-like diodes for radiation detectors using Boron Nitride (BN). This fabrication is done by performing lithography and metal deposition processes on a Cubic Boron Nitride (cBN) of around 200 nm in thickness layer on top of a boron doped diamond substrate. The

In this project, we aim to fabricate PIN structure-like diodes for radiation detectors using Boron Nitride (BN). This fabrication is done by performing lithography and metal deposition processes on a Cubic Boron Nitride (cBN) of around 200 nm in thickness layer on top of a boron doped diamond substrate. The main goal is to create the most efficient and affordable alpha particle—and ideally neutron—detector in a radiation setting. Thus, making more accessible radiation detectors that can be more easily produced and disposed of, as well as minimizing the size of conventional detectors.

ContributorsGutierrez, Eric (Author) / Nemanich, Robert (Thesis director) / Zaniewski, Anna (Committee member) / Barrett, The Honors College (Contributor) / Department of Physics (Contributor)
Created2023-05
164946-Thumbnail Image.png
Description
This paper begins with an introduction to the topics relevant to the research presented. Properties of diamond, diamond’s ability to be used in power electronics compared to other semiconducting materials, and a brief overview of field effect transistors are among the topics discussed. The remainder of the paper centers around

This paper begins with an introduction to the topics relevant to the research presented. Properties of diamond, diamond’s ability to be used in power electronics compared to other semiconducting materials, and a brief overview of field effect transistors are among the topics discussed. The remainder of the paper centers around research that has been conducted on seven diamond samples. Interface characterization was performed on two diamond samples, one with a high boron incorporation epitaxial layer and another with a low boron incorporation epitaxial layer. UPS He I analysis and UPS He II analysis were used to construct band alignments for the two samples, which revealed no significant differences between their measured properties. A Python program designed to optimize XPS loss peak and UPS He II graphical data analysis is also discussed in detail. Next, Hall effect measurements are examined. Hall effect measurements were carried out on seven diamond samples, two of which have high boron incorporation epitaxial layers, two of which have low boron incorporation epitaxial layers, one of which has a moderate boron incorporation epitaxial layer, and two of which have a phosphorus-doped epitaxial layer. Hall measurements of the boron-doped samples revealed no significant differences in measured parameters amongst the samples with varying boron incorporation epitaxial layers, with the exception of an expected difference in measured carrier concentration proportional to the amount of dopant incorporation in the layers. Some samples with boron-doped epitaxial layers produced measurements indicating n-type charge carriers, which is unexpected given the p-type charge carriers within these samples. The phosphorus-doped samples were unable to be measured due to overly high resistance following an oxygen termination step, and this effect was functionally reversed following hydrogen termination of the samples. It is hypothesized that Fermi pinning is responsible for this effect. The paper concludes with a summary of data discussed in previous sections and a suggested direction for future research on this topic.
ContributorsJacobs, Madeleine (Author) / Nemanich, Robert (Thesis director) / Botana, Antia (Committee member) / Barrett, The Honors College (Contributor) / College of Integrative Sciences and Arts (Contributor)
Created2022-05
Description
Rapid expansion of dense beds of fine, spherical particles subjected to rapid depressurization is studied in a vertical shock tube. As the particle bed is unloaded, a high-speed video camera captures the dramatic evolution of the particle bed structure. Pressure transducers are used to measure the dynamic pressure changes during

Rapid expansion of dense beds of fine, spherical particles subjected to rapid depressurization is studied in a vertical shock tube. As the particle bed is unloaded, a high-speed video camera captures the dramatic evolution of the particle bed structure. Pressure transducers are used to measure the dynamic pressure changes during the particle bed expansion process. Image processing, signal processing, and Particle Image Velocimetry techniques, are used to examine the relationships between particle size, initial bed height, bed expansion rate, and gas velocities.

The gas-particle interface and the particle bed as a whole expand and evolve in stages. First, the bed swells nearly homogeneously for a very brief period of time (< 2ms). Shortly afterward, the interface begins to develop instabilities as it continues to rise, with particles nearest the wall rising more quickly. Meanwhile, the bed fractures into layers and then breaks down further into cellular-like structures. The rate at which the structural evolution occurs is shown to be dependent on particle size. Additionally, the rate of the overall bed expansion is shown to be dependent on particle size and initial bed height.

Taller particle beds and beds composed of smaller-diameter particles are found to be associated with faster bed-expansion rates, as measured by the velocity of the gas-particle interface. However, the expansion wave travels more slowly through these same beds. It was also found that higher gas velocities above the the gas-particle interface measured \textit{via} Particle Image Velocimetry or PIV, were associated with particle beds composed of larger-diameter particles. The gas dilation between the shocktube diaphragm and the particle bed interface is more dramatic when the distance between the gas-particle interface and the diaphragm is decreased-as is the case for taller beds.

To further elucidate the complexities of this multiphase compressible flow, simple OpenFOAM (Weller, 1998) simulations of the shocktube experiment were performed and compared to bed expansion rates, pressure fluctuations, and gas velocities. In all cases, the trends and relationships between bed height, particle diameter, with expansion rates, pressure fluctuations and gas velocities matched well between experiments and simulations. In most cases, the experimentally-measured bed rise rates and the simulated bed rise rates matched reasonably well in early times. The trends and overall values of the pressure fluctuations and gas velocities matched well between the experiments and simulations; shedding light on the effects each parameter has on the overall flow.
ContributorsZunino, Heather (Author) / Adrian, Ronald J (Thesis advisor) / Clarke, Amanda (Committee member) / Chen, Kangping (Committee member) / Herrmann, Marcus (Committee member) / Huang, Huei-Ping (Committee member) / Arizona State University (Publisher)
Created2019
154170-Thumbnail Image.png
Description
A theoretical study of a three-dimensional (3D) N/S interface with arbitrary spin

polarization and interface geometry is presented. The 3D model gives the same intrinsic

spin polarization and superconducting gap dependence as the 1D model. This

demonstrates that the 1D model can be use to t 3D data.

Using this model, a Heusler alloy

A theoretical study of a three-dimensional (3D) N/S interface with arbitrary spin

polarization and interface geometry is presented. The 3D model gives the same intrinsic

spin polarization and superconducting gap dependence as the 1D model. This

demonstrates that the 1D model can be use to t 3D data.

Using this model, a Heusler alloy is investigated. Andreev reflection measurements

show that the spin polarization is 80% in samples sputtered on unheated MgO(100)

substrates and annealed at high temperatures. However, the spin polarization is

considerably smaller in samples deposited on heated substrates.

Ferromagnetic FexSi􀀀x alloys have been proposed as potential spin injectors into

silicon with a substantial spin polarization. Andreev Reflection Spectroscopy (ARS) is

utilized to determine the spin polarization of both amorphous and crystalline Fe65Si35

alloys. The amorphous phase has a significantly higher spin polarization than that of

the crystalline phase.

In this thesis, (1111) Fe SmO0:82F0:18FeAs and Pb superconductors are used to

measure the spin polarization of a highly spin-polarized material, La0:67Sr0:33MnO3.

Both materials yield the same intrinsic spin polarization, therefore, Fe-superconductors

can be used in ARS. Based on the behavior of the differential conductance for highly

spin polarized LSMO and small polarization of Au, it can be concluded that the Fe-Sc

is not a triplet superconductor.

Zero bias anomaly (ZBA), in point contact Andreev reflection (PCAR), has been

utilized as a characteristic feature to reveal many novel physics. Complexities at a

normal metal/superconducting interface often cause nonessential ZBA-like features,

which may be mistaken as ZBA. In this work, it is shown that an extrinsic ZBA,

which is due to the contact resistance, cannot be suppressed by a highly spin-polarized

current while a nonessential ZBA cannot be affected the contact resistance.

Finally, Cu/Cu multilayer GMR structures were fabricated and the GMR% measured

at 300 K and 4.5 K gave responses of 63% and 115% respectively. Not only

do the GMR structures have a large enhancement of resistance, but by applying an

external magnetic eld it is shown that, unlike most materials, the spin polarization

can be tuned to values of 0.386 to 0.415 from H = 0 kOe to H = 15 kOe.
ContributorsGifford, Jessica Anna (Author) / Chen, Tingyong (Thesis advisor) / Bennett, Peter (Committee member) / Nemanich, Robert (Committee member) / Tsen, Kong-Thon (Committee member) / Arizona State University (Publisher)
Created2015