Matching Items (5)
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- All Subjects: Memory
- Creators: Conrad, Cheryl
- Creators: Electrical Engineering Program
- Member of: Barrett, The Honors College Thesis/Creative Project Collection
Description
In this paper, it is determined that learning retention decreases with age and there is a linear rate of decrease. In this study, four male Long-Evans Rats were used. The rats were each trained in 4 different tasks throughout their lifetime, using a food reward as motivation to work. Rats were said to have learned a task at the age when they received the highest accuracy during a task. A regression of learning retention was created for the set of studied rats: Learning Retention = 112.9 \u2014 0.085919 x (Age at End of Task), indicating that learning retention decreases at a linear rate, although rats have different rates of decrease of learning retention. The presence of behavioral training was determined not to have a positive impact on this rate. In behavioral studies, there were statistically significant differences between timid/outgoing and large ball ability between W12 and Z12. Rat W12 had overall better learning retention and also was more compliant, did not resist being picked up and traveled more frequently at high speeds (in the large ball) than Z12. Further potential studies include implanting an electrode into the frontal cortex in order to compare neuro feedback with learning retention, and using human subjects to find the rate of decrease in learning retention. The implication of this study, if also true for human subjects, is that older persons may need enhanced training or additional refresher training in order to retain information that is learned at a later age.
ContributorsSpinrad, Amelia (Author) / Si, Jennie (Thesis director) / Thompson, Patrick (Committee member) / Ma, Weichao (Committee member) / Barrett, The Honors College (Contributor)
Created2014-05
Description
Resistive Random Access Memory (RRAM) is an emerging type of non-volatile memory technology that seeks to replace FLASH memory. The RRAM crossbar array is advantageous in its relatively small cell area and faster read latency in comparison to NAND and NOR FLASH memory; however, the crossbar array faces design challenges of its own in sneak-path currents that prevent proper reading of memory stored in the RRAM cell. The Current Sensing Amplifier is one method of reading RRAM crossbar arrays. HSpice simulations are used to find the associated reading delays of the Current Sensing Amplifier with respect to various sizes of RRAM crossbar arrays, as well as the largest array size compatible for accurate reading. It is found that up to 1024x1024 arrays are achievable with a worst-case read delay of 815ps, and it is further likely 2048x2048 arrays are able to be read using the Current Sensing Amplifier. In comparing the Current Sensing Amplifier latency results with previously obtained latency results from the Voltage Sensing Amplifier, it is shown that the Voltage Sensing Amplifier reads arrays in sizes up to 256x256 faster while the Current Sensing Amplifier reads larger arrays faster.
ContributorsMoore, Jenna Barber (Author) / Yu, Shimeng (Thesis director) / Liu, Rui (Committee member) / Electrical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2016-12
Description
This thesis outlines the hand-held memory characterization testing system that is to be created into a PCB (printed circuit board). The circuit is designed to apply voltages diagonally through a RRAM cell (32x32 memory array). The purpose of this sweep across the RRAM is to measure and calculate the high and low resistance state value over a specified amount of testing cycles. With each cell having a unique output of high and low resistance states a unique characterization of each RRAM cell is able to be developed. Once the memory is characterized, the specific RRAM cell that was tested is then able to be used in a varying amount of applications for different things based on its uniqueness. Due to an inability to procure a packaged RRAM cell, a Mock-RRAM was instead designed in order to emulate the same behavior found in a RRAM cell.
The final testing circuit and Mock-RRAM are varied and complex but come together to be able to produce a measured value of the high resistance and low resistance state. This is done by the Arduino autonomously digitizing the anode voltage, cathode voltage, and output voltage. A ramp voltage that sweeps from 1V to -1V is applied to the Mock-RRAM acting as an input. This ramp voltage is then later defined as the anode voltage which is just one of the two nodes connected to the Mock-RRAM. The cathode voltage is defined as the other node at which the voltage drops across the Mock-RRAM. Using these three voltages as input to the Arduino, the Mock-RRAM path resistance is able to be calculated at any given point in time. Conducting many test cycles and calculating the high and low resistance values allows for a graph to be developed of the chaotic variation of resistance state values over time. This chaotic variation can then be analyzed further in the future in order to better predict trends and characterize the RRAM cell that was tested.
Furthermore, the interchangeability of many devices on the PCB allows for the testing system to do more in the future. Ports have been added to the final PCB in order to connect a packaged RRAM cell. This will allow for the characterization of a real RRAM memory cell later down the line rather than a Mock-RRAM as emulation. Due to the autonomous testing, very few human intervention is needed which makes this board a great baseline for others in the future looking to add to it and collect larger pools of data.
The final testing circuit and Mock-RRAM are varied and complex but come together to be able to produce a measured value of the high resistance and low resistance state. This is done by the Arduino autonomously digitizing the anode voltage, cathode voltage, and output voltage. A ramp voltage that sweeps from 1V to -1V is applied to the Mock-RRAM acting as an input. This ramp voltage is then later defined as the anode voltage which is just one of the two nodes connected to the Mock-RRAM. The cathode voltage is defined as the other node at which the voltage drops across the Mock-RRAM. Using these three voltages as input to the Arduino, the Mock-RRAM path resistance is able to be calculated at any given point in time. Conducting many test cycles and calculating the high and low resistance values allows for a graph to be developed of the chaotic variation of resistance state values over time. This chaotic variation can then be analyzed further in the future in order to better predict trends and characterize the RRAM cell that was tested.
Furthermore, the interchangeability of many devices on the PCB allows for the testing system to do more in the future. Ports have been added to the final PCB in order to connect a packaged RRAM cell. This will allow for the characterization of a real RRAM memory cell later down the line rather than a Mock-RRAM as emulation. Due to the autonomous testing, very few human intervention is needed which makes this board a great baseline for others in the future looking to add to it and collect larger pools of data.
ContributorsDobrin, Ryan Christopher (Co-author) / Halden, Matthew (Co-author) / Hall, Tanner (Co-author) / Barnaby, Hugh (Thesis director) / Kitchen, Jennifer (Committee member) / Electrical Engineering Program (Contributor, Contributor) / Barrett, The Honors College (Contributor)
Created2019-05
Description
The aim of this study was to determine whether IUD administration, with and without the presence of Levo, and with and without the presence of the ovaries, impacts cognition in a rat model. Rats received either Sham or Ovariectomy (Ovx) surgery (removal of the ovaries), plus either no IUD, a Blank IUD (without Levo), or a Levo-releasing IUD (Levo IUD), enabling us to evaluate the effects of Ovx and the effects of IUD administration on cognition. Two weeks after surgery, all treatment groups were tested on the water radial arm maze, Morris water maze, and visible platform task to evaluate cognition. At sacrifice, upon investigation of the uteri, it was determined that some of the IUDs were no longer present in animals from these groups: Sham\u2014Blank IUD, Ovx\u2014Blank IUD, and Sham\u2014Levo IUD. Results from the remaining three groups showed that compared to Sham animals with no IUDs, Ovx animals with no IUDs had marginally impaired working memory performance, and that Ovx animals with Levo IUDs as compared to Ovx animals with no IUDs had marginally enhanced memory performance, not specific to a particular memory type. Results also showed that Ovx animals with Levo IUDs had qualitatively more cells in their vaginal smears and increased uterine horn weight compared to Ovx animals with no IUDs, suggesting local stimulation of the Levo IUDs to the uterine horns. Overall, these results provide alternative evidence to the hypothesis that the Levo IUD administers Levo in solely a localized manner, and suggests that the possibility for the Levo IUD to affect reproductive cyclicity in ovary-intact animals is not rejected. The potential for the Levo IUD to exert effects on cognition suggests that either the hormone does in fact systemically circulate, or that the Levo IUD administration affects cognition by altering an as yet undetermined hormonal or other feedback between the uterus and the brain.
ContributorsStrouse, Isabel Martha (Author) / Bimonte-Nelson, Heather (Thesis director) / Glenberg, Arthur (Committee member) / Sirianni, Rachael (Committee member) / Conrad, Cheryl (Committee member) / School of Life Sciences (Contributor) / Department of Psychology (Contributor) / Barrett, The Honors College (Contributor)
Created2018-12
Description
Estradiol (E2) and Levonorgestrel (Levo) are two hormones commonly used in hormone therapy (HT) to decrease symptoms associated with menopause. Both of these hormones have been shown to have beneficial effects on cognition when given alone in a rodent model of menopause. However, it is unknown whether these hormones, when taken in combination, are beneficial or harmful to cognition. This is a critically important question given that these hormones are most often given in combination versus separately. This thesis is composed of two studies examining the cognitive effects of E2 and Levo using a rat model of surgical menopause. Study 1 assessed how the dose of E2 treatment in rats impacted cognitive performance, and found that low dose E2 enhanced working memory performance. Next, based on the results from Study 1, Study 2 used low dose E2 in combination with different doses of Levo to examine the cognitive effects of several E2 to Levo ratio combinations. The results from Study 2 demonstrated that the combination of low dose E2 with a high dose of Levo at a 1:2 ratio impaired cognition, and that the ratio currently used in HT, 3:1, may also negatively impact cognition. Indeed, there was a dose response effect indicating that working and reference memory performance was incrementally impaired as Levo dose increased. The findings in this thesis suggest that the E2 plus Levo combination is likely not neutral for cognitive function, and prompts further evaluation in menopausal women, as well as drug discovery research to optimize HT using highly controlled preclinical models.
ContributorsBerns-Leone, Claire Elizabeth (Co-author) / Prakapenka, Alesia (Co-author) / Pena, Veronica (Co-author) / Northup-Smith, Steven (Co-author) / Melikian, Ryan (Co-author) / Ladwig, Ducileia (Co-author) / Patel, Shruti (Co-author) / Croft, Corissa (Co-author) / Bimonte-Nelson, Heather (Thesis director) / Glenberg, Arthur (Committee member) / Conrad, Cheryl (Committee member) / School of Life Sciences (Contributor) / Department of Psychology (Contributor) / Barrett, The Honors College (Contributor)
Created2016-12