Matching Items (6)
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- All Subjects: Semiconductors
- Creators: Simonson, Mark
Description
Company X is one of the world's largest semiconductor companies in the world, having a current market capitalization of 177.44 Billion USD, an enterprise value of 173.6 Billion USD, and generated 52.7 billion USD in revenue in fiscal year 2013. Recently, Company X has been looking to expand its Foundry business. The Foundry business in the semiconductor business is the actual process of making the chips. This process can be approached in several different ways by companies who need their chips built. A company, like TSMC, can be considered a pure-play company and only makes chips for other companies. A fabless company, like Apple, creates its own chip design and then allows another company to build them. It also uses other chip designs for its products, but outsources the building to another company. Lastly, the integrated device manufacturing companies like Samsung or Company X both design and build the chip. The foundry industry is a rather novel market for Company X because it owns less than 1 percent of the market. However, the industry itself is rather large, generating a total of 40 billion dollars in revenue annually, with expectations to have increasing year over year growth into the foreseeable future. The industry is fairly concentrated with TSMC being the top competitor, owning roughly 50 percent of the market with Samsung and Global Foundries lagging behind as notable competitors. It is a young industry and there is potential opportunity for companies that want to get into the business. For Company X, it is not only another market to get into, but also an added business segment to supplant their business segments that are forecasted to do poorly in the near future. This thesis will analyze the financial opportunity for Company X in the foundry space. Our final product is a series of P&L's which illustrate our findings. The results of our analysis were presented and defended in front of a panel of Company X managers and executives.
ContributorsJones, Trevor (Author) / Matiski, Matthew (Co-author) / Green, Alex (Co-author) / Simonson, Mark (Thesis director) / Hertzel, Michael (Committee member) / Department of Finance (Contributor) / W. P. Carey School of Business (Contributor) / Barrett, The Honors College (Contributor)
Created2015-05
Description
The purpose of this thesis was to design a market entrance strategy for Company X to enter the microcontroller (MCU) market within the Internet of Things (IoT). The five IoT segments are automotive; medical; retail; industrial; and military, aerospace, and government. To reach a final decision, we will research the markets, analyze make versus buy scenarios, and deliver a financial analysis on the chosen strategy. Based on the potential financial benefits and compatibility with Company X's current business model, we recommend that Company X enter the automotive segment through mergers & acquisitions (M&A). After analyzing the supply chain structure of the automotive IoT, we advise Company X to acquire Freescale Semiconductor for $46.98 per share.
ContributorsBradley, Rachel (Co-author) / Fankhauser, Elisa (Co-author) / McCoach, Robert (Co-author) / Zheng, Weilin (Co-author) / Simonson, Mark (Thesis director) / Hertzel, Mike (Committee member) / Barrett, The Honors College (Contributor) / Department of Finance (Contributor) / Department of Supply Chain Management (Contributor) / School of Accountancy (Contributor) / School of International Letters and Cultures (Contributor) / WPC Graduate Programs (Contributor)
Created2015-05
Description
Our thesis project aims to evaluate a major semiconductor company's (The Company) substrate supplier strategy in order to find the ideal number of suppliers that minimizes fixed cost and supplier power. With The Company spending roughly $2.2 billion annually on substrates, supplier strategy has a significant impact on their costs. As a general rule in micro processing, the circuitry of the processor becomes twice as dense every two years. The substrate, being the pathway through which the process or with the motherboard, must become more advanced as well, although the technology does not grow at nearly the same speed. Leading the way in their industry, The Company is at the forefront of technology and produces the world's most advanced processing units. The suppliers The Company purchases from must be innovators in their own respective fields in order to be capable of handling such "bleeding-edge" technology; this requires a supplier to make a commitment to continuously work towards meeting The Company's constantly changing technological requirements. The ultimate goal of this project is to determine the ideal number of substrate suppliers that balances the effects of production costs and buying power to give the company the best overall purchase price.
ContributorsWright, Brian (Author) / Hertzel, Michael (Thesis director) / Simonson, Mark (Committee member) / Shirts, John (Committee member) / Barrett, The Honors College (Contributor)
Created2012-05
Description
This paper serves as an analysis of the current operational conditions of a real-world company – referred to as “Company X” – with respect to the IC substrate industry. The cost of substrates, a crucial component in the production of Company X’s product, has recently diverged from Company X’s predictions and is contributing to declining profitability. This analysis aims to discover the underlying cause for price divergence and recommend potential resolutions to improve the forecast of substrate costs and profitability. The paper is organized as follows: Chapter 1 is an introduction to IC substrates and the industry as a whole, Chapter 2 is a breakdown of the specific factors responsible for substrate prices, and Chapter 3 delivers a final recommendation to Company X and concludes the paper.
ContributorsFares, Ariya (Ari) (Author) / O’Loughlin, Connor (Co-author) / Guillaume, Riley (Co-author) / Aggarwal, Bianca (Co-author) / King, Camden (Co-author) / Simonson, Mark (Thesis director) / Hertzel, Michael (Committee member) / Barrett, The Honors College (Contributor) / Department of Finance (Contributor)
Created2023-05
Description
Diamond transistors are promising as high-power and high-frequency devices having higher efficiencies than conventional transistors. Diamond possesses superior electronic properties, such as a high bandgap (5.47 eV), high breakdown voltage (>10 MV cm−1 ), high electron and hole mobilities [4500 and 3800 cm2 V−1 · s−1, respectively], high electron and hole saturation velocities (1.5 × 107 and 1.05 × 107 cm s−1, respectively), and high thermal conductivity [22 W cm−1 · K−1], compared to conventional semiconductors. Reportedly, the diamond field-effect transistors (FETs) have shown transition frequencies (fT) of 45 and 70 GHz, maximum oscillation frequency (fmax) of 120 GHz, and radiofrequency (RF) power densities of 2.1 and 3.8 W mm−1 at 1 GHz. A two-dimensional-hole-gas (2DHG) surface channel forms on H-diamond by transfer doping from adsorbates/dielectrics in contact with H-diamond surface. However, prior studies indicate that charge transfer at the dielectric/ H-diamond interface could result in relatively low mobility attributed to interface scattering from the transferred negative charge to acceptor region. H-terminated diamond exhibits a negative electron affinity (NEA) of -1.1 to -1.3 eV, which is crucial to enable charge transfer doping. To overcome these limitations modulation doping, that is, selective doping, that leads to spatial separation of the MoO3 acceptor layer from the hole channel on H-diamond has been proposed. Molybdenum oxide (MoO3) was used as dielectric as it has electron affinity of 5.9eV and could align its conduction band minimum (CBM) below the valence band maximum (VBM) of H-terminated diamond. The band alignment provides the driving potential for charge transfer. Hafnium oxide (HfO2) was used as interfacial layer since it is a high-k oxide insulator (∼25), having large Eg (5.6 eV), high critical breakdown field, and high thermal stability. This study presents photoemission measurements of the electronic band alignments of the MoO3/HfO2/H-diamond layer structure to gain insight into the driving potential for the negative charge transfer and the location of the negative charges near the interface, in the HfO2 layer or in the MoO3 layer. The diamond hole concentration, mobility, and sheet resistance were characterized for MoO3/HfO2/H-Diamond with HfO2 layers of 0, 2 and 4 nm thickness.
ContributorsDeshmukh, Aditya Vilasrao (Author) / Nemanich, Robert J. (Thesis advisor) / Alford, Terry (Committee member) / Yang, Sui (Committee member) / Arizona State University (Publisher)
Created2024
Description
We gathered and analyzed key data from a wide-range of competitors in the foundry, fabless, and Integrated design manufacturing business. After detecting a downward trend in the return of invested capital (ROIC) and higher capital intensity of Company X, we searched for alternatives to turn this around. We conclude that, to decrease the net PPE of Company X, a sale-leaseback transaction would help Company X reduce their balance sheet and provided financing to advance their manufacturing capabilities.
ContributorsBhat, Arjun Khandige (Co-author) / Brock, Ethan (Co-author) / Gamperl, Max (Co-author) / Gupta, Viraj (Co-author) / Macha, Sanketh (Co-author) / Simonson, Mark (Thesis director) / Duran, Juan Carlos (Committee member) / Department of Finance (Contributor) / Barrett, The Honors College (Contributor)
Created2018-05