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- All Subjects: Semiconductors
- Creators: Ponce, Fernando
- Creators: Department of Finance
- Member of: Theses and Dissertations
- Status: Published
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Raman spectroscopy characterization of anharmonicity and alloying effects in semiconductor materials
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This paper serves as an analysis of the current operational conditions of a real-world company – referred to as “Company X” – with respect to the IC substrate industry. The cost of substrates, a crucial component in the production of Company X’s product, has recently diverged from Company X’s predictions and is contributing to declining profitability. This analysis aims to discover the underlying cause for price divergence and recommend potential resolutions to improve the forecast of substrate costs and profitability. The paper is organized as follows: Chapter 1 is an introduction to IC substrates and the industry as a whole, Chapter 2 is a breakdown of the specific factors responsible for substrate prices, and Chapter 3 delivers a final recommendation to Company X and concludes the paper.
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The fundamental direct and indirect band gaps of Ge1-ySny materials are measured by room temperature photoluminescence in samples containing 0 ≤ y ≤ 0.11 and a transition to direct gap materials is found to occur at yc = 0.087. This result is enabled by the development of sample growth and processing protocols that produce high-quality materials epitaxially on Ge-buffered Si(100) substrates. Strategies to optimize the optical performance are explored by varying the film thickness, thermal and surface treatments, and n-type doping. The electrical and optical properties of diodes based on these materials are characterized by current-voltage, optical responsivity, and electroluminescence measurements. These show improved optical performance near yc with tunable emission out to 2500 nm. Measuring the carrier lifetimes in devices with strain relaxed and fully strained interfaces show significantly longer lifetimes in the fully strained case.
The direct and indirect band gaps of Sn-rich (y > x) Ge1-x-ySixSny materials are measured by room temperature photoluminescence on optimized samples. These data confirm a transition to direct gap materials occurs for the ternary alloy as well. Devices based on compositions 0.02 ≤ x ≤ 0.10 and 0.03 ≤ y ≤ 0.11 are characterized by current-voltage, optical responsivity, and electroluminescence measurements and show competitive performance with analogous devices based on Ge1-ySny materials. A detailed study of the direct gap in Ge1-xSix alloys gives parameters crucial en route to a global description of the Ge1-x-ySixSny fundamental band gaps.
Archetypal laser device designs on Si are explored by fabricating degenerate pn junction diodes and highly doped waveguide devices based on high-quality Ge1-ySny materials. The diodes showed tunnel-like current-voltage characteristics and tailored electroluminescence based on the doping profile. The waveguides demonstrate emission under optical stimulation.
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