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Description
Gallium Nitride (GaN), being a wide-bandgap semiconductor, shows its advantage over the conventional semiconductors like Silicon and Gallium Arsenide for high temperature applications, especially in the temperature range from 300°C to 600°C. Development of stable ohmic contacts to GaN with low contact resistivity has been identified as a prerequisite to the success of GaN high temperature electronics. The focus of this work was primarily derived from the requirement of an appropriate metal contacts to work with GaN-based hybrid solar cell operating at high temperature.
Alloyed Ti/Al/Ni/Au contact and non-alloyed Al/Au contact were developed to form low-resistivity contacts to n-GaN and their stability at high temperature were studied. The alloyed Ti/Al/Ni/Au contact offered a specific contact resistivity (ρc) of 6×10-6 Ω·cm2 at room temperature measured the same as the temperature increased to 400°C. No significant change in ρc was observed after the contacts being subjected to 400°C, 450°C, 500°C, 550°C, and 600°C, respectively, for at least 4 hours in air. Since several device technology prefer non-alloyed contacts Al/Au metal stack was applied to form the contacts to n-type GaN. An initial ρc of 3×10-4 Ω·cm2, measured after deposition, was observed to continuously reduce under thermal stress at 400°C, 450°C, 500°C, 550°C, and 600°C, respectively, finally stabilizing at 5×10-6 Ω·cm2. Both the alloyed and non-alloyed metal contacts showed exceptional capability of stable operation at temperature as high as 600°C in air with low resistivity ~10-6 Ω·cm2, with ρc lowering for the non-alloyed contacts with high temperatures.
The p-GaN contacts showed remarkably superior ohmic behavior at elevated temperatures. Both ρc and sheet resistance (Rsh) of p-GaN decreased by a factor of 10 as the ambient temperature increased from room temperature to 390°C. The annealed Ni/Au contact showed ρc of 2×10-3 Ω·cm2 at room temperature, reduced to 1.6×10-4 Ω·cm2 at 390°C. No degradation was observed after the contacts being subjected to 450°C in air for 48 hours. Indium Tin Oxide (ITO) contacts, which has been widely used as current spreading layer in GaN-base optoelectronic devices, measured an initial ρc [the resistivity of the ITO/p-GaN interface, since the metal/ITO ρc is negligible] of 1×10-2 Ω·cm2 at room temperature. No degradation was observed after the contact being subjected to 450°C in air for 8 hours.
Accelerated life testing (ALT) was performed to further evaluate the contacts stability at high temperatures quantitatively. The ALT results showed that the annealed Ni/Au to p-GaN contacts is more stable in nitrogen ambient, with a lifetime of 2,628 hours at 450°C which is approximately 12 times longer than that at 450°C in air.
Alloyed Ti/Al/Ni/Au contact and non-alloyed Al/Au contact were developed to form low-resistivity contacts to n-GaN and their stability at high temperature were studied. The alloyed Ti/Al/Ni/Au contact offered a specific contact resistivity (ρc) of 6×10-6 Ω·cm2 at room temperature measured the same as the temperature increased to 400°C. No significant change in ρc was observed after the contacts being subjected to 400°C, 450°C, 500°C, 550°C, and 600°C, respectively, for at least 4 hours in air. Since several device technology prefer non-alloyed contacts Al/Au metal stack was applied to form the contacts to n-type GaN. An initial ρc of 3×10-4 Ω·cm2, measured after deposition, was observed to continuously reduce under thermal stress at 400°C, 450°C, 500°C, 550°C, and 600°C, respectively, finally stabilizing at 5×10-6 Ω·cm2. Both the alloyed and non-alloyed metal contacts showed exceptional capability of stable operation at temperature as high as 600°C in air with low resistivity ~10-6 Ω·cm2, with ρc lowering for the non-alloyed contacts with high temperatures.
The p-GaN contacts showed remarkably superior ohmic behavior at elevated temperatures. Both ρc and sheet resistance (Rsh) of p-GaN decreased by a factor of 10 as the ambient temperature increased from room temperature to 390°C. The annealed Ni/Au contact showed ρc of 2×10-3 Ω·cm2 at room temperature, reduced to 1.6×10-4 Ω·cm2 at 390°C. No degradation was observed after the contacts being subjected to 450°C in air for 48 hours. Indium Tin Oxide (ITO) contacts, which has been widely used as current spreading layer in GaN-base optoelectronic devices, measured an initial ρc [the resistivity of the ITO/p-GaN interface, since the metal/ITO ρc is negligible] of 1×10-2 Ω·cm2 at room temperature. No degradation was observed after the contact being subjected to 450°C in air for 8 hours.
Accelerated life testing (ALT) was performed to further evaluate the contacts stability at high temperatures quantitatively. The ALT results showed that the annealed Ni/Au to p-GaN contacts is more stable in nitrogen ambient, with a lifetime of 2,628 hours at 450°C which is approximately 12 times longer than that at 450°C in air.
ContributorsZhao, Shirong (Author) / Chowdhury, Srabanti (Thesis advisor) / Goodnick, Stephen (Committee member) / Zhao, Yuji (Committee member) / Nemanich, Robert (Committee member) / Arizona State University (Publisher)
Created2016
Description
There is an ever-growing need for broadband conformal antennas to not only reduce the number of antennas utilized to cover a broad range of frequencies (VHF-UHF) but also to reduce visual and RF signatures associated with communication systems. In many applications antennas needs to be very close to low-impedance mediums or embedded inside low-impedance mediums. However, for conventional metal and dielectric antennas to operate efficiently in such environments either a very narrow bandwidth must be tolerated, or enough loss added to expand the bandwidth, or they must be placed one quarter of a wavelength above the conducting surface. The latter is not always possible since in the HF through low UHF bands, critical to Military and Security functions, this quarter-wavelength requirement would result in impractically large antennas.
Despite an error based on a false assumption in the 1950’s, which had severely underestimated the efficiency of magneto-dielectric antennas, recently demonstrated magnetic-antennas have been shown to exhibit extraordinary efficiency in conformal applications. Whereas conventional metal-and-dielectric antennas carrying radiating electric currents suffer a significant disadvantage when placed conformal to the conducting surface of a platform, because they induce opposing image currents in the surface, magnetic-antennas carrying magnetic radiating currents have no such limitation. Their magnetic currents produce co-linear image currents in electrically conducting surfaces.
However, the permeable antennas built to date have not yet attained the wide bandwidth expected because the magnetic-flux-channels carrying the wave have not been designed to guide the wave near the speed of light at all frequencies. Instead, they tend to lose the wave by a leaky fast-wave mechanism at low frequencies or they over-bind a slow-wave at high frequencies. In this dissertation, we have studied magnetic antennas in detail and presented the design approach and apparatus required to implement a flux-channel carrying the magnetic current wave near the speed of light over a very broad frequency range which also makes the design of a frequency independent antenna (spiral) possible. We will learn how to construct extremely thin conformal antennas, frequency-independent permeable antennas, and even micron-sized antennas that can be embedded inside the brain without damaging the tissue.
Despite an error based on a false assumption in the 1950’s, which had severely underestimated the efficiency of magneto-dielectric antennas, recently demonstrated magnetic-antennas have been shown to exhibit extraordinary efficiency in conformal applications. Whereas conventional metal-and-dielectric antennas carrying radiating electric currents suffer a significant disadvantage when placed conformal to the conducting surface of a platform, because they induce opposing image currents in the surface, magnetic-antennas carrying magnetic radiating currents have no such limitation. Their magnetic currents produce co-linear image currents in electrically conducting surfaces.
However, the permeable antennas built to date have not yet attained the wide bandwidth expected because the magnetic-flux-channels carrying the wave have not been designed to guide the wave near the speed of light at all frequencies. Instead, they tend to lose the wave by a leaky fast-wave mechanism at low frequencies or they over-bind a slow-wave at high frequencies. In this dissertation, we have studied magnetic antennas in detail and presented the design approach and apparatus required to implement a flux-channel carrying the magnetic current wave near the speed of light over a very broad frequency range which also makes the design of a frequency independent antenna (spiral) possible. We will learn how to construct extremely thin conformal antennas, frequency-independent permeable antennas, and even micron-sized antennas that can be embedded inside the brain without damaging the tissue.
ContributorsYousefi, Tara (Author) / Diaz, Rodolfo E (Thesis advisor) / Cochran, Douglas (Committee member) / Goodnick, Stephen (Committee member) / Pan, George (Committee member) / Arizona State University (Publisher)
Created2017
Description
It has been a long-standing goal to epitaxially integrate III-V alloys with Si substrates which can enable low-cost microelectronic and optoelectronic systems. Among the III-V alloys, gallium phosphide (GaP) is a strong candidate, especially for solar cells applications. Gallium phosphide with small lattice mismatch (~0.4%) to Si enables coherent/pseudomorphic epitaxial growth with little crystalline defect creation. The band offset between Si and GaP suggests that GaP can function as an electron-selective contact, and it has been theoretically shown that GaP/Si integrated solar cells have the potential to overcome the limitations of common a-Si based heterojunction (SHJ) solar cells.
Despite the promising potential of GaP/Si heterojunction solar cells, there are two main obstacles to realize high performance photovoltaic devices from this structure. First, the growth of the polar material (GaP) on the non-polar material (Si) is a challenge in how to suppress the formation of structural defects, such as anti-phase domains (APD). Further, it is widely observed that the minority-carrier lifetime of the Si substrates is significantly decreased during epitaxially growth of GaP on Si.
In this dissertation, two different GaP growth methods were compared and analyzed, including migration-enhanced epitaxy (MEE) and traditional molecular beam epitaxy (MBE). High quality GaP can be realized on precisely oriented (001) Si substrates by MBE growth, and the investigation of structural defect creation in the GaP/Si epitaxial structures was conducted using high resolution X-ray diffraction (HRXRD) and high resolution transmission electron microscopy (HRTEM).
The mechanisms responsible for lifetime degradation were further investigated, and it was found that external fast diffusors are the origin for the degradation. Two practical approaches including the use of both a SiNx diffusion barrier layer and P-diffused layers, to suppress the Si minority-carrier lifetime degradation during GaP epitaxial growth on Si by MBE were proposed. To achieve high performance of GaP/Si solar cells, different GaP/Si structures were designed, fabricated and compared, including GaP as a hetero-emitter, GaP as a heterojunction on the rear side, inserting passivation membrane layers at the GaP/Si interface, and GaP/wet-oxide functioning as a passivation contact. A designed of a-Si free carrier-selective contact MoOx/Si/GaP solar cells demonstrated 14.1% power conversion efficiency.
Despite the promising potential of GaP/Si heterojunction solar cells, there are two main obstacles to realize high performance photovoltaic devices from this structure. First, the growth of the polar material (GaP) on the non-polar material (Si) is a challenge in how to suppress the formation of structural defects, such as anti-phase domains (APD). Further, it is widely observed that the minority-carrier lifetime of the Si substrates is significantly decreased during epitaxially growth of GaP on Si.
In this dissertation, two different GaP growth methods were compared and analyzed, including migration-enhanced epitaxy (MEE) and traditional molecular beam epitaxy (MBE). High quality GaP can be realized on precisely oriented (001) Si substrates by MBE growth, and the investigation of structural defect creation in the GaP/Si epitaxial structures was conducted using high resolution X-ray diffraction (HRXRD) and high resolution transmission electron microscopy (HRTEM).
The mechanisms responsible for lifetime degradation were further investigated, and it was found that external fast diffusors are the origin for the degradation. Two practical approaches including the use of both a SiNx diffusion barrier layer and P-diffused layers, to suppress the Si minority-carrier lifetime degradation during GaP epitaxial growth on Si by MBE were proposed. To achieve high performance of GaP/Si solar cells, different GaP/Si structures were designed, fabricated and compared, including GaP as a hetero-emitter, GaP as a heterojunction on the rear side, inserting passivation membrane layers at the GaP/Si interface, and GaP/wet-oxide functioning as a passivation contact. A designed of a-Si free carrier-selective contact MoOx/Si/GaP solar cells demonstrated 14.1% power conversion efficiency.
ContributorsZhang, Chaomin (Author) / Honsberg, Christiana (Thesis advisor) / King, Richard (Thesis advisor) / Goodnick, Stephen (Committee member) / Faleev, Nikolai (Committee member) / Bowden, Stuart (Committee member) / Arizona State University (Publisher)
Created2017
Description
The project described here is a solar powered intrusion detection system consisting of three modules: a battery recharging circuit, a laser emitter and photodetector pair, and a Wi- Fi connectivity board. Over the preceding seven months, great care has been taken for the design and construction of this system. The first three months were spent researching and selecting suitable IC's and external components (e.g. solar panel, batteries, etc.). Then, the next couple of months were spent ordering specific materials and equipment for the construction of our prototype. Finally, the last two months were used to build a working prototype, with a substantial amount of time used for perfecting our system's packaging and operation. This report will consist of a detailed discussion of our team's research, design activities, prototype implementation, final budget, and final schedule. Technical discussion of the concepts behind our design will assist with understanding the design activities and prototype implementation sections that will follow. Due to the generous funding of the group from the Barrett Honors College, our overall budget available for the project was $1600. Of that amount, only $334.51 was spent on the actual system components, with $829.42 being spent on the equipment and materials needed for the testing and construction of the prototype. As far as the schedule goes, we are essentially done with the project. The only tasks left to finish are a successful defense of the project at the oral presentation on Friday, 29 March 2013, followed by a successful demo on 26 April 2013.
ContributorsTroyer, Nicole L. (Co-author) / Shtayer, Idan (Co-author) / Guise, Chris (Co-author) / Kozicki, Michael (Thesis director) / Roedel, Ronald (Committee member) / Goodnick, Stephen (Committee member) / Barrett, The Honors College (Contributor) / Electrical Engineering Program (Contributor)
Created2013-05
Description
Implantable medical device technology is commonly used by doctors for disease management, aiding to improve patient quality of life. However, it is possible for these devices to be exposed to ionizing radiation during various medical therapeutic and diagnostic activities while implanted. This commands that these devices remain fully operational during, and long after, radiation exposure. Many implantable medical devices employ standard commercial complementary metal-oxide-semiconductor (CMOS) processes for integrated circuit (IC) development, which have been shown to degrade with radiation exposure. This necessitates that device manufacturers study the effects of ionizing radiation on their products, and work to mitigate those effects to maintain a high standard of reliability. Mitigation can be completed through targeted radiation hardening by design (RHBD) techniques as not to infringe on the device operational specifications. This thesis details a complete radiation analysis methodology that can be implemented to examine the effects of ionizing radiation on an IC as part of RHBD efforts. The methodology is put into practice to determine the failure mechanism in a charge pump circuit, common in many of today's implantable pacemaker designs, as a case study. Charge pump irradiation data shows a reduction of circuit output voltage with applied dose. Through testing of individual test devices, the response is identified as parasitic inter-device leakage caused by trapped oxide charge buildup in the isolation oxides. A library of compact models is generated to represent isolation oxide parasitics based on test structure data along with 2-Dimensional structure simulation results. The original charge pump schematic is then back-annotated with transistors representative of the parasitic. Inclusion of the parasitic devices in schematic allows for simulation of the entire circuit, accounting for possible parasitic devices activated by radiation exposure. By selecting a compact model for the parasitics generated at a specific dose, the compete circuit response is then simulated at the defined dose. The reduction of circuit output voltage with dose is then re-created in a radiation-enabled simulation validating the analysis methodology.
ContributorsSchlenvogt, Garrett (Author) / Barnaby, Hugh J (Thesis advisor) / Goodnick, Stephen (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2010
Description
As the single-junction silicon solar cell is approaching its theoretical efficiency limits, the loss from shading and resistance is gaining increasing attention. The metal grid pattern may cause an efficiency loss up to 1–3%abs (absolute percentage) depending on the grid’s materials and structure.Many attempts have been proposed to reduce the loss caused by the contacts and module. Among them, the monolithic solar cell, which is a solar cell with multiple string cells on the same wafer and connected in a series, presents advantages of low output current, busbar-free contact, minimized interconnection space, and ohmic loss reduction. However, this structure also introduces a lateral forward bias current through the base region, which severely degrades the cell’s performance. In addition, this interconnection in the base region has partially shunted certain solar cells in the monolithic cell, which created a mismatch between string cells.
For the last few decades, researchers have used different methods such as etching trenches or enlarging the distance between the neighboring string cells to solve this problem. However, these methods were both ineffective and defective.
In this work, a novel method of suppressing the lateral forward bias current is proposed. By adding a very high surface recombination to the mid-region between the string cells, the carrier density in the mid-region can be decreased close to the doping density. Thus, the resistivity in the mid-region can be increased tenfold or more. As a result, the lateral forward bias current is greatly reduced.
Other methods to reduce lateral forward bias current include optimizing the width of the mid-region, shading the mid-region, reducing the base doping and base thickness which can be used to reduce the mismatch as well.
Another method has been proposed to calculate the minimum efficiency loss of a monolithic cell compared to the baseline solar cell. As a result, the monolithic cell could potentially gain more advantages over the baseline solar cells with a thinner and low-doped wafer.
A monolithic solar cell with innovative designs is presented in this work which shows an efficiency that is potentially higher than that of normal solar cells.
ContributorsXue, Shujian (Author) / Bowden, Studart (Thesis advisor) / Goodnick, Stephen (Committee member) / Vasileska, Dragica (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2022
Description
Wide Bandgap (WBG) semiconductor materials are shaping day-to-day technologyby introducing powerful and more energy responsible devices. These materials have
opened the door for building basic semiconductor devices which are superior in terms of
handling high voltages, high currents, power, and temperature which is not possible using
conventional silicon technology. As the research continues in the field of WBG based
devices, there is a potential chance that the power electronics industry can save billions of
dollars deploying energy-efficient circuits in high power conversion electronics. Diamond,
silicon carbide and gallium nitride are the top three contenders among which diamond can
significantly outmatch others in a variety of properties. However, diamond technology is
still in its early phase of development and there are challenges involved in many aspects of
processing a successful integrated circuit. The work done in this research addresses three
major aspects of problems related to diamond technology. In the first part, the applicability
of compact modeling and Technology Computer-Aided Design (TCAD) modeling
technique for diamond Schottky p-i-n diodes has been demonstrated. The compact model
accurately predicts AC, DC and nonlinear behavior of the diode required for fast circuit
simulation. Secondly, achieving low resistance ohmic contact onto n-type diamond is one
of the major issues that is still an open research problem as it determines the performance
of high-power RF circuits and switching losses in power converters circuits. So, another
portion of this thesis demonstrates the achievement of very low resistance ohmic contact
(~ 10-4 Ω⋅cm2) onto n-type diamond using nano crystalline carbon interface layer. Using
the developed TCAD and compact models for low resistance contacts, circuit level
predictions show improvements in RF performance. Lastly, an initial study of breakdown
characteristics of diamond and cubic boron nitride heterostructure is presented. This study
serves as a first step for making future transistors using diamond and cubic boron nitride –
a very less explored material system in literature yet promising for extreme circuit
applications involving high power and temperature.
ContributorsJHA, VISHAL (Author) / Thornton, Trevor (Thesis advisor) / Goodnick, Stephen (Committee member) / Nemanich, Robert (Committee member) / Alford, Terry (Committee member) / Hoque, Mazhar (Committee member) / Arizona State University (Publisher)
Created2023
Description
Gallium Nitride (GaN) is uniquely suited for Radio Frequency (RF) and power electronic applications due to its intrinsically high saturation velocity and high mobility compared to Silicon and Silicon Carbide (SiC). High Electron Mobility Transistors (HEMTs) have remained the primary topology for GaN transistors in RF applications. However, GaN HEMTs suffer from a variety of issues such as current crowding, lack of enhancement mode (E-Mode) operation and non-linearity. These drawbacks slow the widespread adoption of GaN devices for ultra-low voltage (ULV) applications such as voltage regulators, automotive and computing applications. E-mode operation is especially desired in low-voltage high frequency switching applications. In this context, Fin Field Effect Transistors (FinFETs) offer an alternative topology for ULV applications as opposed to conventional HEMTs. Recent advances in material processing, high aspect ratio epitaxial growth and etching methods has led to an increased interest in 3D nanostructures such as Nano-FinFETs and Nanowire FETs. A typical 3D nano-FinFET is the AlGaN/GaN Metal Insulator Semiconductor (MIS) FET wherein a layer of Al2O3 surrounds the AlGaN/GaN fin. The presence of the side gates leads to additional lateral confinement of the 2D Electron Gas (2DEG). Theoretical calculations of transport properties in confined systems such as AlGaN/GaN Finfets are scarce compared to those of their planar HEMT counterparts.
A novel simulator is presented in this dissertation, which employs self-consistent solution of the coupled 1D Boltzmann – 2D Schrödinger – 3D Poisson problem, to yield the channel electrostatics and the low electric field transport characteristics of AlGaN/GaN MIS FinFETs. The low field electron mobility is determined by solving the Boltzmann transport equation in the Quasi-1D region using 1D Ensemble Monte Carlo method. Three electron-phonon scattering mechanisms (acoustic, piezoelectric and polar optical phonon scattering) and interface roughness scattering at the AlGaN/GaN interface are considered in this theoretical model. Simulated low-field electron mobility and its temperature dependence are in agreement with experimental data reported in the literature.
A quasi-1D version of alloy clustering model is derived and implemented and the limiting effect of alloy clustering on the low-field electron mobility is investigated for the first time for MIS FinFET device structures.
ContributorsKumar, Viswanathan Naveen (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen (Committee member) / Nemanich, Robert (Committee member) / Povolotskyi, Michael (Committee member) / Esqueda, Ivan Sanchez (Committee member) / Arizona State University (Publisher)
Created2022
Description
Semiconductor devices often face reliability issues due to their operational con-
ditions causing performance degradation over time. One of the root causes of such
degradation is due to point defect dynamics and time dependent changes in their
chemical nature. Previously developed Unified Solver was successful in explaining
the copper (Cu) metastability issues in cadmium telluride (CdTe) solar cells. The
point defect formalism employed there could not be extended to chlorine or arsenic
due to numerical instabilities with the dopant chemical reactions. To overcome these
shortcomings, an advanced version of the Unified Solver called PVRD-FASP tool was
developed. This dissertation presents details about PVRD-FASP tool, the theoretical
framework for point defect chemical formalism, challenges faced with numerical al-
gorithms, improvements for the user interface, application and/or validation of the
tool with carefully chosen simulations, and open source availability of the tool for the
scientific community.
Treating point defects and charge carriers on an equal footing in the new formalism
allows to incorporate chemical reaction rate term as generation-recombination(G-R)
term in continuity equation. Due to the stiff differential equations involved, a reaction
solver based on forward Euler method with Newton step is proposed in this work.
The Jacobian required for Newton step is analytically calculated in an elegant way
improving speed, stability and accuracy of the tool. A novel non-linear correction
scheme is proposed and implemented to resolve charge conservation issue.
The proposed formalism is validated in 0-D with time evolution of free carriers
simulation and with doping limits of Cu in CdTe simulation. Excellent agreement of
light JV curves calculated with PVRD-FASP and Silvaco Atlas tool for a 1-D CdTe
solar cell validates reaction formalism and tool accuracy. A closer match with the Cu
SIMS profiles of Cu activated CdTe samples at four different anneal recipes to the
simulation results show practical applicability. A 1D simulation of full stack CdTe
device with Cu activation at 350C 3min anneal recipe and light JV curve simulation
demonstrates the tool capabilities in performing process and device simulations. CdTe
device simulation for understanding differences between traps and recombination
centers in grain boundaries demonstrate 2D capabilities.
ditions causing performance degradation over time. One of the root causes of such
degradation is due to point defect dynamics and time dependent changes in their
chemical nature. Previously developed Unified Solver was successful in explaining
the copper (Cu) metastability issues in cadmium telluride (CdTe) solar cells. The
point defect formalism employed there could not be extended to chlorine or arsenic
due to numerical instabilities with the dopant chemical reactions. To overcome these
shortcomings, an advanced version of the Unified Solver called PVRD-FASP tool was
developed. This dissertation presents details about PVRD-FASP tool, the theoretical
framework for point defect chemical formalism, challenges faced with numerical al-
gorithms, improvements for the user interface, application and/or validation of the
tool with carefully chosen simulations, and open source availability of the tool for the
scientific community.
Treating point defects and charge carriers on an equal footing in the new formalism
allows to incorporate chemical reaction rate term as generation-recombination(G-R)
term in continuity equation. Due to the stiff differential equations involved, a reaction
solver based on forward Euler method with Newton step is proposed in this work.
The Jacobian required for Newton step is analytically calculated in an elegant way
improving speed, stability and accuracy of the tool. A novel non-linear correction
scheme is proposed and implemented to resolve charge conservation issue.
The proposed formalism is validated in 0-D with time evolution of free carriers
simulation and with doping limits of Cu in CdTe simulation. Excellent agreement of
light JV curves calculated with PVRD-FASP and Silvaco Atlas tool for a 1-D CdTe
solar cell validates reaction formalism and tool accuracy. A closer match with the Cu
SIMS profiles of Cu activated CdTe samples at four different anneal recipes to the
simulation results show practical applicability. A 1D simulation of full stack CdTe
device with Cu activation at 350C 3min anneal recipe and light JV curve simulation
demonstrates the tool capabilities in performing process and device simulations. CdTe
device simulation for understanding differences between traps and recombination
centers in grain boundaries demonstrate 2D capabilities.
ContributorsShaik, Abdul Rawoof (Author) / Vasileska, Dragica (Thesis advisor) / Ringhofer, Christian (Committee member) / Sankin, Igor (Committee member) / Brinkman, Daniel (Committee member) / Goodnick, Stephen (Committee member) / Bertoni, Mariana (Committee member) / Arizona State University (Publisher)
Created2019
Description
Amorphous materials can be uniformly deposited over a large area at lower cost compared to crystalline semiconductors (Silicon or Germanium). This property along with its high resistivity and wide band-gap found many applications in devices like rectifiers, xerography, xero-radiography, ultrahigh sensitivity optical cameras, digital radiography, and mammography (2D and 3D tomosynthesis). Amorphous selenium is the only amorphous material that undergoes impact ionization where only holes avalanche at high electric fields. This leads to a small excess noise factor which is a very important performance comparison matrix for avalanche photodetectors. Thus, there is a need to model high field avalanche process in amorphous selenium. At high fields, the transport in amorphous selenium changes from low values of activated trap-limited drift mobility to higher values of band transport mobility, via extended states. When the transport shifts from activated mobility with a high degree of localization to extended state band transport, the wavefunction of the amorphous material resembles that of its crystalline counterpart. To that effect, crystalline monoclinic selenium which has the closest resemblance to vapor deposited amorphous selenium has been studied. Modelling a crystalline semiconductor makes calculations simpler. The transport phenomena in crystalline monoclinic selenium is studied by using a bulk Monte Carlo technique to solve the semi-classical Boltzman Transport equation and thus calculate vital electrical parameters like mobility, critical field and mobility variations against temperatures. The band structure and the density of states function for monoclinic selenium was obtained by using an atomistic simulation tool, the Atomistic Toolkit in the Virtual Nano Lab, Quantum Wise, Copenhagen, Denmark. Moreover, the velocity and energy against time characteristics have been simulated for a wide range of electric fields (1-1000 $\frac{kV}{cm}$), which is further used to find the hole drift mobility. The low field mobility is obtained from the slope of the velocity vs. electric field plot. The low field hole mobility was calculated to be 5.51 $\frac{cm^{2}}{Vs}$ at room temperature. The experimental value for low field hole mobility is 7.29 $\frac{cm^{2}}{Vs}$. The energy versus electric field simulation at high fields is used to match the experimental onset of avalanche (754 $\frac{kV}{cm}$) for an ionization threshold energy of 2.1 eV. The Arrhenius plot for mobility against temperature is simulated and compared with published experimental data. The experimental and simulation results show a close match, thus validating the study.
ContributorsMukherjee, Atreyo (Author) / Vasileska, Dragica (Thesis advisor) / Goldan, Amirhossein (Thesis advisor) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2017