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Description
There is a pervasive need in the defense industry for conformal, low-profile, efficient and broadband (HF-UHF) antennas. Broadband capabilities enable shared aperture multi-function radiators, while conformal antenna profiles minimize physical damage in army applications, reduce drag and weight penalties in airborne applications and reduce the visual and RF signatures of

There is a pervasive need in the defense industry for conformal, low-profile, efficient and broadband (HF-UHF) antennas. Broadband capabilities enable shared aperture multi-function radiators, while conformal antenna profiles minimize physical damage in army applications, reduce drag and weight penalties in airborne applications and reduce the visual and RF signatures of the communication node. This dissertation is concerned with a new class of antennas called Magneto-Dielectric wire antennas (MDWA) that provide an ideal solution to this ever-present and growing need. Magneto-dielectric structures (μr>1;εr>1) can partially guide electromagnetic waves and radiate them by leaking off the structure or by scattering from any discontinuities, much like a metal antenna of the same shape. They are attractive alternatives to conventional whip and blade antennas because they can be placed conformal to a metallic ground plane without any performance penalty. A two pronged approach is taken to analyze MDWAs. In the first, antenna circuit models are derived for the prototypical dipole and loop elements that include the effects of realistic dispersive magneto-dielectric materials of construction. A material selection law results, showing that: (a) The maximum attainable efficiency is determined by a single magnetic material parameter that we term the hesitivity: Closely related to Snoek's product, it measures the maximum magnetic conductivity of the material. (b) The maximum bandwidth is obtained by placing the highest amount of μ" loss in the frequency range of operation. As a result, high radiation efficiency antennas can be obtained not only from the conventional low loss (low μ") materials but also with highly lossy materials (tan(δm)>>1). The second approach used to analyze MDWAs is through solving the Green function problem of the infinite magneto-dielectric cylinder fed by a current loop. This solution sheds light on the leaky and guided waves supported by the magneto-dielectric structure and leads to useful design rules connecting the permeability of the material to the cross sectional area of the antenna in relation to the desired frequency of operation. The Green function problem of the permeable prolate spheroidal antenna is also solved as a good approximation to a finite cylinder.
ContributorsSebastian, Tom (Author) / Diaz, Rodolfo E (Thesis advisor) / Pan, George (Committee member) / Aberle, James T., 1961- (Committee member) / Kozicki, Michael (Committee member) / Arizona State University (Publisher)
Created2013
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Description
The medical industry has benefited greatly by electronic integration resulting in the explosive growth of active medical implants. These devices often treat and monitor chronic health conditions and require very minimal power usage. A key part of these medical implants is an ultra-low power two way wireless communication system. This

The medical industry has benefited greatly by electronic integration resulting in the explosive growth of active medical implants. These devices often treat and monitor chronic health conditions and require very minimal power usage. A key part of these medical implants is an ultra-low power two way wireless communication system. This enables both control of the implant as well as relay of information collected. This research has focused on a high performance receiver for medical implant applications. One commonly quoted specification to compare receivers is energy per bit required. This metric is useful, but incomplete in that it ignores Sensitivity level, bit error rate, and immunity to interferers. In this study exploration of receiver architectures and convergence upon a comprehensive solution is done. This analysis is used to design and build a system for validation. The Direct Conversion Receiver architecture implemented for the MICS standard in 0.18 µm CMOS process consumes approximately 2 mW is competitive with published research.
ContributorsStevens, Mark (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Aberle, James T., 1961- (Committee member) / Barnaby, Hugh (Committee member) / Arizona State University (Publisher)
Created2012
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Description
A dual-channel directional digital hearing aid (DHA) front-end using a fully differential difference amplifier (FDDA) based Microphone interface circuit (MIC) for a capacitive Micro Electro Mechanical Systems (MEMS) microphones and an adaptive-power analog font end (AFE) is presented. The Microphone interface circuit based on FDDA converts

A dual-channel directional digital hearing aid (DHA) front-end using a fully differential difference amplifier (FDDA) based Microphone interface circuit (MIC) for a capacitive Micro Electro Mechanical Systems (MEMS) microphones and an adaptive-power analog font end (AFE) is presented. The Microphone interface circuit based on FDDA converts the capacitance variations into voltage signal, achieves a noise of 32 dB SPL (sound pressure level) and an SNR of 72 dB, additionally it also performs single to differential conversion allowing for fully differential analog signal chain. The analog front-end consists of 40dB VGA and a power scalable continuous time sigma delta ADC, with 68dB SNR dissipating 67u¬W from a 1.2V supply. The ADC implements a self calibrating feedback DAC, for calibrating the 2nd order non-linearity. The VGA and power scalable ADC is fabricated on 0.25 um CMOS TSMC process. The dual channels of the DHA are precisely matched and achieve about 0.5dB gain mismatch, resulting in greater than 5dB directivity index. This will enable a highly integrated and low power DHA
ContributorsNaqvi, Syed Roomi (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Chae, Junseok (Committee member) / Barnby, Hugh (Committee member) / Aberle, James T., 1961- (Committee member) / Arizona State University (Publisher)
Created2011
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Description
During the last decades the development of the transistor and its continuous down-scaling allowed the appearance of cost effective wireless communication systems. New generation wideband wireless mobile systems demand high linearity, low power consumption and the low cost devices. Traditional RF systems are mainly analog-based circuitry. Contrary to digital circuits,

During the last decades the development of the transistor and its continuous down-scaling allowed the appearance of cost effective wireless communication systems. New generation wideband wireless mobile systems demand high linearity, low power consumption and the low cost devices. Traditional RF systems are mainly analog-based circuitry. Contrary to digital circuits, the technology scaling results in reduction on the maximum voltage swing which makes RF design very challenging. Pushing the interface between the digital and analog boundary of the RF systems closer to the antenna becomes an attractive trend for modern RF devices. In order to take full advantages of the deep submicron CMOS technologies and digital signal processing (DSP), there is a strong trend towards the development of digital transmitter where the RF upconversion is part of the digital-to-analog conversion (DAC). This thesis presents a new digital intermediate frequency (IF) to RF transmitter for 2GHz wideband code division multiple access (W-CDMA). The proposed transmitter integrates a 3-level digital IF current-steering cell, an up-conversion mixer with a tuned load and an RF variable gain amplifier (RF VGA) with an embedded finite impulse response (FIR) reconstruction filter in the up-conversion path. A 4th-order 1.5-bit IF bandpass sigma delta modulator (BP SDM) is designed to support in-band SNR while the out-of-band quantization noise due to the noise shaping is suppressed by the embedded reconstruction filter to meet spectrum emission mask and ACPR requirements. The RF VGA provides 50dB power scaling in 10-dB steps with less than 1dB gain error. The design is fabricated in a 0.18um CMOS technology with a total core area of 0.8 x 1.6 mm2. The IC delivers 0dBm output power at 2GHz and it draws approximately 120mA from a 1.8V DC supply at the maximum output power. The measurement results proved that a digital-intensive digital IF to RF converter architecture can be successfully employed for WCDMA transmitter application.
ContributorsHan, Yongping (Author) / Kiaei, Sayfe (Thesis advisor) / Yu, Hongyu (Committee member) / Bakkaloglu, Bertan (Committee member) / Aberle, James T., 1961- (Committee member) / Barnaby, Hugh (Committee member) / Arizona State University (Publisher)
Created2012
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Description
The high cut-off frequency of deep sub-micron CMOS technologies has enabled the integration of radio frequency (RF) transceivers with digital circuits. However, the challenging point is the integration of RF power amplifiers, mainly due to the low breakdown voltage of CMOS transistors. Silicon-on-insulator (SOI) metal semiconductor field effect transistors (MESFETs)

The high cut-off frequency of deep sub-micron CMOS technologies has enabled the integration of radio frequency (RF) transceivers with digital circuits. However, the challenging point is the integration of RF power amplifiers, mainly due to the low breakdown voltage of CMOS transistors. Silicon-on-insulator (SOI) metal semiconductor field effect transistors (MESFETs) have been introduced to remedy the limited headroom concern in CMOS technologies. The MESFETs presented in this thesis have been fabricated on different SOI-CMOS processes without making any change to the standard fabrication steps and offer 2-30 times higher breakdown voltage than the MOSFETs on the same process. This thesis explains the design steps of high efficiency and wideband RF transmitters using the proposed SOI-CMOS compatible MESFETs. This task involves DC and RF characterization of MESFET devices, along with providing a compact Spice model for simulation purposes. This thesis presents the design of several SOI-MESFET RF power amplifiers operating at 433, 900 and 1800 MHz with ~40% bandwidth. Measurement results show a peak power added efficiency (PAE) of 55% and a peak output power of 22.5 dBm. The RF-PAs were designed to operate in Class-AB mode to minimize the linearity degradation. Class-AB power amplifiers lead to poor power added efficiency, especially when fed with signals with high peak to average power ratio (PAPR) such as wideband code division multiple access (W-CDMA). Polar transmitters have been introduced to improve the efficiency of RF-PAs at backed-off powers. A MESFET based envelope tracking (ET) polar transmitter was designed and measured. A low drop-out voltage regulator (LDO) was used as the supply modulator of this polar transmitter. MESFETs are depletion mode devices; therefore, they can be configured in a source follower configuration to have better stability and higher bandwidth that MOSFET based LDOs. Measurement results show 350 MHz bandwidth while driving a 10 pF capacitive load. A novel polar transmitter is introduced in this thesis to alleviate some of the limitations associated with polar transmitters. The proposed architecture uses the backgate terminal of a partially depleted transistor on SOI process, which relaxes the bandwidth and efficiency requirements of the envelope amplifier in a polar transmitter. The measurement results of the proposed transmitter demonstrate more than three times PAE improvement at 6-dB backed-off output power, compared to the traditional RF transmitters.
ContributorsGhajar, Mohammad Reza (Author) / Thornton, Trevor (Thesis advisor) / Aberle, James T., 1961- (Committee member) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2012
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Description
Semiconductor device scaling has kept up with Moore's law for the past decades and they have been scaling by a factor of half every one and half years. Every new generation of device technology opens up new opportunities and challenges and especially so for analog design. High speed and low

Semiconductor device scaling has kept up with Moore's law for the past decades and they have been scaling by a factor of half every one and half years. Every new generation of device technology opens up new opportunities and challenges and especially so for analog design. High speed and low gain is characteristic of these processes and hence a tradeoff that can enable to get back gain by trading speed is crucial. This thesis proposes a solution that increases the speed of sampling of a circuit by a factor of three while reducing the specifications on analog blocks and keeping the power nearly constant. The techniques are based on the switched capacitor technique called Correlated Level Shifting. A triple channel Cyclic ADC has been implemented, with each channel working at a sampling frequency of 3.33MS/s and a resolution of 14 bits. The specifications are compared with that based on a traditional architecture to show the superiority of the proposed technique.
ContributorsSivakumar, Balasubramanian (Author) / Farahani, Bahar Jalali (Thesis advisor) / Garrity, Douglas (Committee member) / Bakkaloglu, Bertan (Committee member) / Aberle, James T., 1961- (Committee member) / Arizona State University (Publisher)
Created2012
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Description
Multiport antennas offer greater design flexibility than traditional one-port designs. An antenna array is a special case of a multiport antenna. If the antenna's inter-element spacing is electrically small, the antenna is capable of achieving superdirectivity. Superdirective antenna arrays are known to be narrow band and have low radiation resistance

Multiport antennas offer greater design flexibility than traditional one-port designs. An antenna array is a special case of a multiport antenna. If the antenna's inter-element spacing is electrically small, the antenna is capable of achieving superdirectivity. Superdirective antenna arrays are known to be narrow band and have low radiation resistance which leads to low radiation efficiency and high VSWR. However, by increasing the self-impedance of the antenna elements, the radiation resistance is increased but the bandwidth remains narrow. A design methodology is developed using the ability to superimpose electric fields and multi-objective optimization to design antenna feed networks. While the emphasis in this dissertation is on antenna arrays and superdirectivity, the design methodology is general and can be applied to other multiport antennas. The design methodology is used to design a multiport impedance-matching network and optimize both the input impedance and radiation pattern of a two-port superdirective antenna array. It is shown that the multiport impedance-matching network is capable of improving the input impedance of the antenna array while maintaining high directionality. The antenna design is critical for the methodology to improve the bandwidth and radiation characteristics of the array. To double the bandwidth of the two-port impedance matched superdirective antenna array, a three-port Yagi-Uda antenna design is demonstrated. The addition of the extra antenna element does not increase the footprint of the antenna array. The design methodology is then used to design a symmetrical antenna array capable of steering its main beam in two directions.
ContributorsArceo, Diana (Author) / Balanis, Constantine A (Thesis advisor) / Aberle, James T., 1961- (Committee member) / Moeller, Karl (Committee member) / Palais, Joseph (Committee member) / Arizona State University (Publisher)
Created2012
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Description
High-Resistivity Silicon (HRS) substrates are important for low-loss, high-performance microwave and millimeter wave devices in high-frequency telecommunication systems. The highest resistivity of up to ~10,000 ohm.cm is Float Zone (FZ) grown Si which is produced in small quantities and moderate wafer diameter. The more common Czochralski (CZ) Si can achieve

High-Resistivity Silicon (HRS) substrates are important for low-loss, high-performance microwave and millimeter wave devices in high-frequency telecommunication systems. The highest resistivity of up to ~10,000 ohm.cm is Float Zone (FZ) grown Si which is produced in small quantities and moderate wafer diameter. The more common Czochralski (CZ) Si can achieve resistivities of around 1000 ohm.cm, but the wafers contain oxygen that can lead to thermal donor formation with donor concentration significantly higher (~1015 cm-3) than the dopant concentration (~1012-1013 cm-3) of such high-resistivity Si leading to resistivity changes and possible type conversion of high-resistivity p-type silicon. In this research capacitance-voltage (C-V) characterization is employed to study the donor formation and type conversion of p-type High-resistivity Silicon-On-Insulator (HRSOI) wafers and the challenges involved in C-V characterization of HRSOI wafers using a Schottky contact are highlighted. The maximum capacitance of bulk or Silicon-On-Insulator (SOI) wafers is governed by the gate/contact area. During C-V characterization of high-resistivity SOI wafers with aluminum contacts directly on the Si film (Schottky contact); it was observed that the maximum capacitance is much higher than that due to the contact area, suggesting bias spreading due to the distributed transmission line of the film resistance and the buried oxide capacitance. In addition, an "S"-shape C-V plot was observed in the accumulation region. The effects of various factors, such as: frequency, contact and substrate sizes, gate oxide, SOI film thickness, film and substrate doping, carrier lifetime, contact work-function, temperature, light, annealing temperature and radiation on the C-V characteristics of HRSOI wafers are studied. HRSOI wafers have the best crosstalk prevention capability compared to other types of wafers, which plays a major role in system-on-chip configuration to prevent coupling between high frequency digital and sensitive analog circuits. Substrate crosstalk in HRSOI and various factors affecting the crosstalk, such as: substrate resistivity, separation between devices, buried oxide (BOX) thickness, radiation, temperature, annealing, light, and device types are discussed. Also various ways to minimize substrate crosstalk are studied and a new characterization method is proposed. Owing to their very low doping concentrations and the presence of oxygen in CZ wafers, HRS wafers pose a challenge in resistivity measurement using conventional techniques such as four-point probe and Hall measurement methods. In this research the challenges in accurate resistivity measurement using four-point probe, Hall method, and C-V profile are highlighted and a novel approach to extract resistivity of HRS wafers based on Impedance Spectroscopy measurements using polymer dielectrics such as Polystyrene and Poly Methyl Methacrylate (PMMA) is proposed.
ContributorsNayak, Pinakpani (Author) / Schroder, Dieter K. (Thesis advisor) / Vasileska, Dragica (Committee member) / Kozicki, Michael (Committee member) / Aberle, James T., 1961- (Committee member) / Arizona State University (Publisher)
Created2012
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Description
The inductance of a conductor expresses its tendency to oppose a change in current flowing through it. For superconductors, in addition to the familiar magnetic inductance due to energy stored in the magnetic field generated by this current, kinetic inductance due to inertia of charge carriers is a significant and

The inductance of a conductor expresses its tendency to oppose a change in current flowing through it. For superconductors, in addition to the familiar magnetic inductance due to energy stored in the magnetic field generated by this current, kinetic inductance due to inertia of charge carriers is a significant and often dominant contribution to total inductance. Devices based on modifying the kinetic inductance of thin film superconductors have widespread application to millimeter-wave astronomy. Lithographically patterning such a film into a high quality factor resonator produces a high sensitivity photodetector known as a kinetic inductance detector (KID), which is sensitive to frequencies above the superconducting energy gap of the chosen material. Inherently multiplexable in the frequency domain and relatively simple to fabricate, KIDs pave the way to the large format focal plane array instruments necessary to conduct the next generation of cosmic microwave background (CMB), star formation, and galaxy evolution studies. In addition, non-linear kinetic inductance can be exploited to develop traveling wave kinetic inductance parametric amplifiers (TKIPs) based on superconducting delay lines to read out these instruments.

I present my contributions to both large and small scale collaborative efforts to develop KID arrays, spectrometers integrated with KIDs, and TKIPs. I optimize a dual polarization TiN KID absorber for the next generation Balloon-borne Large Aperture Submillimeter Telescope for Polarimetry, which is designed to investigate the role magnetic fields play in star formation. As part of an effort to demonstrate aluminum KIDs on sky for CMB polarimetry, I fabricate devices for three design variants. SuperSpec and WSpec are respectively the on-chip and waveguide implementations of a filter bank spectrometer concept designed for survey spectroscopy of high redshift galaxies. I provide a robust tool for characterizing the performance of all SuperSpec devices and demonstrate basic functionality of the first WSpec prototype. As part of an effort to develop the first W-Band (75-110 GHz) TKIP, I construct a cryogenic waveguide feedthrough, which enhances the Astronomical Instrumentation Laboratory’s capability to test W-Band devices in general. These efforts contribute to the continued maturation of these kinetic inductance technologies, which will usher in a new era of millimeter-wave astronomy.
ContributorsChe, George (Author) / Mauskopf, Philip D (Thesis advisor) / Aberle, James T., 1961- (Committee member) / Groppi, Christopher (Committee member) / Semken, Steven (Committee member) / Trichopoulos, Georgios (Committee member) / Arizona State University (Publisher)
Created2018
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Description
A domain decomposition method for analyzing very large FDTD domains, hundreds of thousands of wavelengths long, is demonstrated by application to the problem of radar scattering in the maritime environment. Success depends on the elimination of artificial scattering from the “sky” boundary and is ensured by an ultra-high-performance absorbing termination

A domain decomposition method for analyzing very large FDTD domains, hundreds of thousands of wavelengths long, is demonstrated by application to the problem of radar scattering in the maritime environment. Success depends on the elimination of artificial scattering from the “sky” boundary and is ensured by an ultra-high-performance absorbing termination which eliminates this reflection at angles of incidence as shallow as 0.03 degrees off grazing. The two-dimensional (2D) problem is used to detail the features of the method. The results are cross-validated by comparison to a parabolic equation (PE) method and surface integral equation method on a 1.7km sea surface problem, and to a PE method on propagation through an inhomogeneous atmosphere in a 4km-long space, both at X-band. Additional comparisons are made against boundary integral equation and PE methods from the literature in a 3.6km space containing an inhomogeneous atmosphere above a flat sea at S-band. The applicability of the method to the three-dimensional (3D) problem is shown via comparison of a 2D solution to the 3D solution of a corridor of sea. As a technical proof of the scalability of the problem with computational power, a 5m-wide, 2m-tall, 1050m-long 3D corridor containing 321.8 billion FDTD cells has been simulated at X-band. A plane wave spectrum analysis of the (X-band) scattered fields produced by a 5m-wide, 225m-long realistic 3D sea surface, and the 2D analog surface obtained by extruding a 2D sea along the width of the corridor, reveals the existence of out-of-plane 3D phenomena missed by the traditional 2D analysis. The realistic sea introduces random strong flashes and nulls in addition to a significant amount of cross-polarized field. Spatial integration using a dispersion-corrected Green function is used to reconstruct the scattered fields outside of the computational FDTD space which would impinge on a 3D target at the end of the corridor. The proposed final approach is a hybrid method where 2D FDTD carries the signal for the first tens of kilometers and the last kilometer is analyzed in 3D.
ContributorsDowd, Brandon (Author) / Diaz, Rodolfo E (Thesis advisor) / Pan, George (Committee member) / Schmidt, Kevin (Committee member) / Aberle, James T., 1961- (Committee member) / Arizona State University (Publisher)
Created2018