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Description
This thesis presents approaches to develop micro seismometers and accelerometers based on molecular electronic transducers (MET) technology using MicroElectroMechanical Systems (MEMS) techniques. MET is a technology applied in seismic instrumentation that proves highly beneficial to planetary seismology. It consists of an electrochemical cell that senses the movement of liquid electrolyte between electrodes by converting it to the output current. MET seismometers have advantages of high sensitivity, low noise floor, small size, absence of fragile mechanical moving parts and independence on the direction of sensitivity axis. By using MEMS techniques, a micro MET seismometer is developed with inter-electrode spacing close to 1μm, which improves the sensitivity of fabricated device to above 3000 V/(m/s^2) under operating bias of 600 mV and input acceleration of 400 μG (G=9.81m/s^2) at 0.32 Hz. The lowered hydrodynamic resistance by increasing the number of channels improves the self-noise to -127 dB equivalent to 44 nG/√Hz at 1 Hz. An alternative approach to build the sensing element of MEMS MET seismometer using SOI process is also presented in this thesis. The significantly increased number of channels is expected to improve the noise performance. Inspired by the advantages of combining MET and MEMS technologies on the development of seismometer, a low frequency accelerometer utilizing MET technology with post-CMOS-compatible fabrication processes is developed. In the fabricated accelerometer, the complicated fabrication of mass-spring system in solid-state MEMS accelerometer is replaced with a much simpler post-CMOS-compatible process containing only deposition of a four-electrode MET structure on a planar substrate, and a liquid inertia mass of an electrolyte droplet encapsulated by oil film. The fabrication process does not involve focused ion beam milling which is used in the micro MET seismometer fabrication, thus the cost is lowered. Furthermore, the planar structure and the novel idea of using an oil film as the sealing diaphragm eliminate the complicated three-dimensional packaging of the seismometer. The fabricated device achieves 10.8 V/G sensitivity at 20 Hz with nearly flat response over the frequency range from 1 Hz to 50 Hz, and a low noise floor of 75 μG/√Hz at 20 Hz.
ContributorsHuang, Hai (Author) / Yu, Hongyu (Thesis advisor) / Jiang, Hanqing (Committee member) / Dai, Lenore (Committee member) / Si, Jennie (Committee member) / Arizona State University (Publisher)
Created2014
Description
Nanolasers represents the research frontier in both the areas of photonics and nanotechnology for its interesting properties in low dimension physics, its appealing prospects in integrated photonics, and other on-chip applications. In this thesis, I present my research work on fabrication and characterization of a new type of nanolasers: metallic cavity nanolasers. The last ten years witnessed a dramatic paradigm shift from pure dielectric cavity to metallic cavity in the research of nanolasers. By using low loss metals such as silver, which is highly reflective at near infrared, light can be confined in an ultra small cavity or waveguide with sub-wavelength dimensions, thus enabling sub-wavelength cavity lasers. Based on this idea, I fabricated two different kinds of metallic cavity nanolasers with rectangular and circular geometries with InGaAs as the gain material and silver as the metallic shell. The lasing wavelength is around 1.55 μm, intended for optical communication applications. Continuous wave (CW) lasing at cryogenic temperature under current injection was achieved on devices with a deep sub-wavelength physical cavity volume smaller than 0.2 λ3. Improving device fabrication process is one of the main challenges in the development of metallic cavity nanolasers due to its ultra-small size. With improved fabrication process and device design, CW lasing at room temperature was demonstrated as well on a sub-wavelength rectangular device with a physical cavity volume of 0.67 λ3. Experiments verified that a small circular nanolasers supporting TE¬01 mode can generate an azimuthal polarized laser beam, providing a compact such source under electrical injection. Sources with such polarizations could have many special applications. Study of digital modulation of circular nanolasers showed that laser noise is an important factor that will affect the data rate of the nanolaser when used as the light source in optical interconnects. For future development, improving device fabrication processes is required to improve device performance. In addition, techniques need to be developed to realize nanolaser/Si waveguide integration. In essence, resolving these two critical issues will finally pave the way for these nanolasers to be used in various practical applications.
ContributorsDing, Kang (Author) / Ning, Cun-Zheng (Thesis advisor) / Yu, Hongbin (Committee member) / Palais, Joseph (Committee member) / Zhang, Yong-Hang (Committee member) / Arizona State University (Publisher)
Created2014
Description
There has been recent interest in demonstrating solar cells which approach the detailed-balance or thermodynamic efficiency limit in order to establish a model system for which mass-produced solar cells can be designed. Polycrystalline CdS/CdTe heterostructures are currently one of many competing solar cell material systems. Despite being polycrystalline, efficiencies up to 21 % have been demonstrated by the company First Solar. However, this efficiency is still far from the detailed-balance limit of 32.1 % for CdTe. This work explores the use of monocrystalline CdTe/MgCdTe and ZnTe/CdTe/MgCdTe double heterostructures (DHs) grown on (001) InSb substrates by molecular beam epitaxy (MBE) for photovoltaic applications.
Undoped CdTe/MgCdTe DHs are first grown in order to determine the material quality of the CdTe epilayer and to optimize the growth conditions. DH samples show strong photoluminescence with over double the intensity as that of a GaAs/AlGaAs DH with an identical layer structure. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a carrier lifetime of up to 179 ns for a 2 µm thick CdTe layer, which is more than one order of magnitude longer than that of polycrystalline CdTe films. MgCdTe barrier layers are found to be effective at confining photogenerated carriers and have a relatively low interface recombination velocity of 461 cm/s. The optimal growth temperature and Cd/Te flux ratio is determined to be 265 °C and 1.5, respectively.
Monocrystalline ZnTe/CdTe/MgCdTe P-n-N DH solar cells are designed, grown, processed into solar cell devices, and characterized. A maximum efficiency of 6.11 % is demonstrated for samples without an anti-reflection coating. The low efficiency is mainly due to the low open-circuit voltage (Voc), which is attributed to high dark current caused by interface recombination at the ZnTe/CdTe interface. Low-temperature measurements show a linear increase in Voc with decreasing temperature down to 77 K, which suggests that the room-temperature operation is limited by non-radiative recombination. An open-circuit voltage of 1.22 V and an efficiency of 8.46 % is demonstrated at 77 K. It is expected that a coherently strained MgCdTe/CdTe/MgCdTe DH solar cell design will produce higher efficiency and Voc compared to the ZnTe/CdTe/MgCdTe design with relaxed ZnTe layer.
Undoped CdTe/MgCdTe DHs are first grown in order to determine the material quality of the CdTe epilayer and to optimize the growth conditions. DH samples show strong photoluminescence with over double the intensity as that of a GaAs/AlGaAs DH with an identical layer structure. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a carrier lifetime of up to 179 ns for a 2 µm thick CdTe layer, which is more than one order of magnitude longer than that of polycrystalline CdTe films. MgCdTe barrier layers are found to be effective at confining photogenerated carriers and have a relatively low interface recombination velocity of 461 cm/s. The optimal growth temperature and Cd/Te flux ratio is determined to be 265 °C and 1.5, respectively.
Monocrystalline ZnTe/CdTe/MgCdTe P-n-N DH solar cells are designed, grown, processed into solar cell devices, and characterized. A maximum efficiency of 6.11 % is demonstrated for samples without an anti-reflection coating. The low efficiency is mainly due to the low open-circuit voltage (Voc), which is attributed to high dark current caused by interface recombination at the ZnTe/CdTe interface. Low-temperature measurements show a linear increase in Voc with decreasing temperature down to 77 K, which suggests that the room-temperature operation is limited by non-radiative recombination. An open-circuit voltage of 1.22 V and an efficiency of 8.46 % is demonstrated at 77 K. It is expected that a coherently strained MgCdTe/CdTe/MgCdTe DH solar cell design will produce higher efficiency and Voc compared to the ZnTe/CdTe/MgCdTe design with relaxed ZnTe layer.
ContributorsDiNezza, Michael John (Author) / Zhang, Yong-Hang (Thesis advisor) / Johnson, Shane (Committee member) / Tao, Meng (Committee member) / Holman, Zachary (Committee member) / Arizona State University (Publisher)
Created2014
Description
This dissertation presents my work on development of deformable electronics using microelectromechanical systems (MEMS) based fabrication technologies. In recent years, deformable electronics are coming to revolutionize the functionality of microelectronics seamlessly with their application environment, ranging from various consumer electronics to bio-medical applications. Many researchers have studied this area, and a wide variety of devices have been fabricated. One traditional way is to directly fabricate electronic devices on flexible substrate through low-temperature processes. These devices suffered from constrained functionality due to the temperature limit. Another transfer printing approach has been developed recently. The general idea is to fabricate functional devices on hard and planar substrates using standard processes then transferred by elastomeric stamps and printed on desired flexible and stretchable substrates. The main disadvantages are that the transfer printing step may limit the yield. The third method is "flexible skins" which silicon substrates are thinned down and structured into islands and sandwiched by two layers of polymer. The main advantage of this method is post CMOS compatible. Based on this technology, we successfully fabricated a 3-D flexible thermal sensor for intravascular flow monitoring. The final product of the 3-D sensor has three independent sensing elements equally distributed around the wall of catheter (1.2 mm in diameter) with 120° spacing. This structure introduces three independent information channels, and cross-comparisons among all readings were utilized to eliminate experimental error and provide better measurement results. The novel fabrication and assembly technology can also be applied to other catheter based biomedical devices. A step forward inspired by the ancient art of folding, origami, which creating three-dimensional (3-D) structures from two-dimensional (2-D) sheets through a high degree of folding along the creases. Based on this idea, we developed a novel method to enable better deformability. One example is origami-enabled silicon solar cells. The solar panel can reach up to 644% areal compactness while maintain reasonable good performance (less than 30% output power density drop) upon 40 times cyclic folding/unfolding. This approach can be readily applied to other functional devices, ranging from sensors, displays, antenna, to energy storage devices.
ContributorsTang, Rui (Author) / Yu, Hongyu (Thesis advisor) / Jiang, Hanqing (Committee member) / Pan, George (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2014
Description
In this work, a highly sensitive strain sensing technique is developed to realize in-plane strain mapping for microelectronic packages or emerging flexible or foldable devices, where mechanical or thermal strain is a major concern that could affect the performance of the working devices or even lead to the failure of the devices. Therefore strain sensing techniques to create a contour of the strain distribution is desired.
The developed highly sensitive micro-strain sensing technique differs from the existing strain mapping techniques, such as digital image correlation (DIC)/micro-Moiré techniques, in terms of working mechanism, by filling a technology gap that requires high spatial resolution while simultaneously maintaining a large field-of-view. The strain sensing mechanism relies on the scanning of a tightly focused laser beam onto the grating that is on the sample surface to detect the change in the diffracted beam angle as a result of the strain. Gratings are fabricated on the target substrates to serve as strain sensors, which carries the strain information in the form of variations in the grating period. The geometric structure of the optical system inherently ensures the high sensitivity for the strain sensing, where the nanoscale change of the grating period is amplified by almost six orders into a diffraction peak shift on the order of several hundred micrometers. It significantly amplifies the small signal measurements so that the desired sensitivity and accuracy can be achieved.
The important features, such as strain sensitivity and spatial resolution, for the strain sensing technique are investigated to evaluate the technique. The strain sensitivity has been validated by measurements on homogenous materials with well known reference values of CTE (coefficient of thermal expansion). 10 micro-strain has been successfully resolved from the silicon CTE extraction measurements. Furthermore, the spatial resolution has been studied on predefined grating patterns, which are assembled to mimic the uneven strain distribution across the sample surface. A resolvable feature size of 10 µm has been achieved with an incident laser spot size of 50 µm in diameter.
In addition, the strain sensing technique has been applied to a composite sample made of SU8 and silicon, as well as the microelectronic packages for thermal strain mappings.
The developed highly sensitive micro-strain sensing technique differs from the existing strain mapping techniques, such as digital image correlation (DIC)/micro-Moiré techniques, in terms of working mechanism, by filling a technology gap that requires high spatial resolution while simultaneously maintaining a large field-of-view. The strain sensing mechanism relies on the scanning of a tightly focused laser beam onto the grating that is on the sample surface to detect the change in the diffracted beam angle as a result of the strain. Gratings are fabricated on the target substrates to serve as strain sensors, which carries the strain information in the form of variations in the grating period. The geometric structure of the optical system inherently ensures the high sensitivity for the strain sensing, where the nanoscale change of the grating period is amplified by almost six orders into a diffraction peak shift on the order of several hundred micrometers. It significantly amplifies the small signal measurements so that the desired sensitivity and accuracy can be achieved.
The important features, such as strain sensitivity and spatial resolution, for the strain sensing technique are investigated to evaluate the technique. The strain sensitivity has been validated by measurements on homogenous materials with well known reference values of CTE (coefficient of thermal expansion). 10 micro-strain has been successfully resolved from the silicon CTE extraction measurements. Furthermore, the spatial resolution has been studied on predefined grating patterns, which are assembled to mimic the uneven strain distribution across the sample surface. A resolvable feature size of 10 µm has been achieved with an incident laser spot size of 50 µm in diameter.
In addition, the strain sensing technique has been applied to a composite sample made of SU8 and silicon, as well as the microelectronic packages for thermal strain mappings.
ContributorsLiang, Hanshuang (Author) / Yu, Hongbin (Thesis advisor) / Poon, Poh Chieh Benny (Committee member) / Jiang, Hanqing (Committee member) / Zhang, Yong-Hang (Committee member) / Arizona State University (Publisher)
Created2014
Description
This thesis investigated two different thermal flow sensors for intravascular shear stress analysis. They were based on heat transfer principle, which heat convection from the resistively heated element to the flowing fluid was measured as a function of the changes in voltage. For both sensors, the resistively heated elements were made of Ti/Pt strips with the thickness 0.12 µm and 0.02 µm. The resistance of the sensing element was measured at approximately 1.6-1.7 kohms;. A linear relation between the resistance and temperature was established over the temperature ranging from 22 degree Celsius to 80 degree Celsius and the temperature coefficient of resistance (TCR) was at approximately 0.12 %/degree Celsius. The first thermal flow sensor was one-dimensional (1-D) flexible shear stress sensor. The structure was sensing element sandwiched by a biocompatible polymer "poly-para-xylylene", also known as Parylene, which provided both insulation of electrodes and flexibility of the sensors. A constant-temperature (CT) circuit was designed as the read out circuit based on 0.6 µm CMOS (Complementary metal-oxide-semiconductor) process. The 1-D shear stress sensor suffered from a large measurement error. Because when the sensor was inserted into blood vessels, it was impossible to mount the sensor to the wall as calibrated in micro fluidic channels. According to the previous simulation work, the shear stress was varying and the sensor itself changed the shear stress distribution. We proposed a three-dimensional (3-D) thermal flow sensor, with three-axis of sensing elements integrated in one sensor. It was in the similar shape as a hexagonal prism with diagonal of 1000 µm. On the top of the sensor, there were five bond pads for external wires over 500 µm thick silicon substrate. In each nonadjacent side surface, there was a bended parylene branch with one sensing element. Based on the unique 3-D structure, the sensor was able to obtain data along three axes. With computational fluid dynamics (CFD) model, it is possible to locate the sensor in the blood vessels and give us a better understanding of shear stress distribution in the presence of time-varying component of blood flow and realize more accurate assessment of intravascular convective heat transfer.
ContributorsTang, Rui (Author) / Yu, Hongyu (Thesis advisor) / Jiang, Hanqing (Committee member) / Pan, George (Committee member) / Arizona State University (Publisher)
Created2011
Description
Dual-wavelength laser sources have various existing and potential applications in wavelength division multiplexing, differential techniques in spectroscopy for chemical sensing, multiple-wavelength interferometry, terahertz-wave generation, microelectromechanical systems, and microfluidic lab-on-chip systems. In the drive for ever smaller and increasingly mobile electronic devices, dual-wavelength coherent light output from a single semiconductor laser diode would enable further advances and deployment of these technologies. The output of conventional laser diodes is however limited to a single wavelength band with a few subsequent lasing modes depending on the device design. This thesis investigates a novel semiconductor laser device design with a single cavity waveguide capable of dual-wavelength laser output with large spectral separation. The novel dual-wavelength semiconductor laser diode uses two shorter- and longer-wavelength active regions that have separate electron and hole quasi-Fermi energy levels and carrier distributions. The shorter-wavelength active region is based on electrical injection as in conventional laser diodes, and the longer-wavelength active region is then pumped optically by the internal optical field of the shorter-wavelength laser mode, resulting in stable dual-wavelength laser emission at two different wavelengths quite far apart. Different designs of the device are studied using a theoretical model developed in this work to describe the internal optical pumping scheme. The carrier transport and separation of the quasi-Fermi distributions are then modeled using a software package that solves Poisson's equation and the continuity equations to simulate semiconductor devices. Three different designs are grown using molecular beam epitaxy, and broad-area-contact laser diodes are processed using conventional methods. The modeling and experimental results of the first generation design indicate that the optical confinement factor of the longer-wavelength active region is a critical element in realizing dual-wavelength laser output. The modeling predicts lower laser thresholds for the second and third generation designs; however, the experimental results of the second and third generation devices confirm challenges related to the epitaxial growth of the structures in eventually demonstrating dual-wavelength laser output.
ContributorsGreen, Benjamin C (Author) / Zhang, Yong-Hang (Thesis advisor) / Ning, Cun-Zheng (Committee member) / Tao, Nongjian (Committee member) / Roedel, Ronald J (Committee member) / Arizona State University (Publisher)
Created2011
Description
Structural health management (SHM) is emerging as a vital methodology to help engineers improve the safety and maintainability of critical structures. SHM systems are designed to reliably monitor and test the health and performance of structures in aerospace, civil, and mechanical engineering applications. SHM combines multidisciplinary technologies including sensing, signal processing, pattern recognition, data mining, high fidelity probabilistic progressive damage models, physics based damage models, and regression analysis. Due to the wide application of carbon fiber reinforced composites and their multiscale failure mechanisms, it is necessary to emphasize the research of SHM on composite structures. This research develops a comprehensive framework for the damage detection, localization, quantification, and prediction of the remaining useful life of complex composite structures. To interrogate a composite structure, guided wave propagation is applied to thin structures such as beams and plates. Piezoelectric transducers are selected because of their versatility, which allows them to be used as sensors and actuators. Feature extraction from guided wave signals is critical to demonstrate the presence of damage and estimate the damage locations. Advanced signal processing techniques are employed to extract robust features and information. To provide a better estimate of the damage for accurate life estimation, probabilistic regression analysis is used to obtain a prediction model for the prognosis of complex structures subject to fatigue loading. Special efforts have been applied to the extension of SHM techniques on aerospace and spacecraft structures, such as UAV composite wings and deployable composite boom structures. Necessary modifications of the developed SHM techniques were conducted to meet the unique requirements of the aerospace structures. The developed SHM algorithms are able to accurately detect and quantify impact damages as well as matrix cracking introduced.
ContributorsLiu, Yingtao (Author) / Chattopadhyay, Aditi (Thesis advisor) / Rajadas, John (Committee member) / Dai, Lenore (Committee member) / Papandreou-Suppappola, Antonia (Committee member) / Jiang, Hanqing (Committee member) / Arizona State University (Publisher)
Created2012
Description
The long wavelength infrared region (LWIR) and mid wavelength infrared region (MWIR) are of great interest as detection in this region offers a wide range of real time applications. Optoelectronic devices operating in the LWIR and MWIR region offer potential applications such as; optical gas sensing, free-space optical communications, infrared counter-measures, biomedical and thermal imaging etc. HgCdTe is a prominent narrow bandgap material that operates in the LWIR region. The focus of this research work is to simulate and analyze the characteristics of a Hg1-xCdxTe photodetector. To achieve this, the tool `OPTODET' has been developed, where various device parameters can be varied and the resultant output can be analyzed. By the study of output characteristics in response to various changes in device parameters will allow users to understand the considerations that must be made in order to reach the optimum working point of an infrared detector. The tool which has been developed is a 1-D drift diffusion based simulator which solves the 1-D Poisson equation to determine potentials and utilizes the results of the 1-D electron and hole continuity equations to determine current. Parameters such as absorption co-efficient, quantum efficiency, dark current, noise, Transit time and detectivity can be simulated. All major recombination mechanisms such as SRH, Radiative and Auger recombination have been considered. Effects of band to band tunnelling have also been considered to correctly model the dark current characteristics.
ContributorsMuralidharan, Pradyumna (Author) / Vasileska, Dragica (Thesis advisor) / Wijewarnasuriya, Priyalal S. (Committee member) / Zhang, Yong-Hang (Committee member) / Arizona State University (Publisher)
Created2011
Description
With the increasing focus on developing environmentally benign electronic packages, lead-free solder alloys have received a great deal of attention. Mishandling of packages, during manufacture, assembly, or by the user may cause failure of solder joint. A fundamental understanding of the behavior of lead-free solders under mechanical shock conditions is lacking. Reliable experimental and numerical analysis of lead-free solder joints in the intermediate strain rate regime need to be investigated. This dissertation mainly focuses on exploring the mechanical shock behavior of lead-free tin-rich solder alloys via multiscale modeling and numerical simulations. First, the macroscopic stress/strain behaviors of three bulk lead-free tin-rich solders were tested over a range of strain rates from 0.001/s to 30/s. Finite element analysis was conducted to determine appropriate specimen geometry that could reach a homogeneous stress/strain field and a relatively high strain rate. A novel self-consistent true stress correction method is developed to compensate the inaccuracy caused by the triaxial stress state at the post-necking stage. Then the material property of micron-scale intermetallic was examined by micro-compression test. The accuracy of this measure is systematically validated by finite element analysis, and empirical adjustments are provided. Moreover, the interfacial property of the solder/intermetallic interface is investigated, and a continuum traction-separation law of this interface is developed from an atomistic-based cohesive element method. The macroscopic stress/strain relation and microstructural properties are combined together to form a multiscale material behavior via a stochastic approach for both solder and intermetallic. As a result, solder is modeled by porous plasticity with random voids, and intermetallic is characterized as brittle material with random vulnerable region. Thereafter, the porous plasticity fracture of the solders and the brittle fracture of the intermetallics are coupled together in one finite element model. Finally, this study yields a multiscale model to understand and predict the mechanical shock behavior of lead-free tin-rich solder joints. Different fracture patterns are observed for various strain rates and/or intermetallic thicknesses. The predictions have a good agreement with the theory and experiments.
ContributorsFei, Huiyang (Author) / Jiang, Hanqing (Thesis advisor) / Chawla, Nikhilesh (Thesis advisor) / Tasooji, Amaneh (Committee member) / Mobasher, Barzin (Committee member) / Rajan, Subramaniam D. (Committee member) / Arizona State University (Publisher)
Created2011