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- All Subjects: Electrical Engineering
- Creators: Ozev, Sule
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- Status: Published
Description
ABSTRACT
Designers creating the next generation remote sensing enabled smart devices need to overcome the challenges of prevailing ventures including time to market and expense.
To reduce the time and effort involved in initial prototyping, a good reference design is often desired and warranted. This paper provides the necessary reference materials for Designers to implement a wireless solution efficiently and effectively.
This document is intended for users with limited Bluetooth technology experience.
Many sensing-enabled devices require a ‘hard-wire’ or cable link to a host monitoring system. This can limit the potential for product advancements by anchoring the system to a single location preventing portability and the convenience of a remote system. By removing the “wired” or cabled portion from a design, a broader scope of devices becomes feasible.
One common problematic area for these types of sensors is within the internal medicine field. Proximity sensing is far more practical and less invasive to implement than surgical implantation. Bluetooth Low Energy (BLE) systems solve the hard wired problem by decoupling the physical sensor from the host system through a BLE transceiver that can send information to an external monitoring system. This wireless link enables new sensor technology to be leveraged into previously unobtainable markets; such as, internal medicine, wearable devices, and Infotainment to name a few. Wireless technology for sensor systems are a potentially disruptive technology changing the way environmental monitoring is implemented and considered.
With this BLE design reference, products can be created with new capabilities to advance current technologies for military, commercial, industrial and medical sectors in rapid succession.
Designers creating the next generation remote sensing enabled smart devices need to overcome the challenges of prevailing ventures including time to market and expense.
To reduce the time and effort involved in initial prototyping, a good reference design is often desired and warranted. This paper provides the necessary reference materials for Designers to implement a wireless solution efficiently and effectively.
This document is intended for users with limited Bluetooth technology experience.
Many sensing-enabled devices require a ‘hard-wire’ or cable link to a host monitoring system. This can limit the potential for product advancements by anchoring the system to a single location preventing portability and the convenience of a remote system. By removing the “wired” or cabled portion from a design, a broader scope of devices becomes feasible.
One common problematic area for these types of sensors is within the internal medicine field. Proximity sensing is far more practical and less invasive to implement than surgical implantation. Bluetooth Low Energy (BLE) systems solve the hard wired problem by decoupling the physical sensor from the host system through a BLE transceiver that can send information to an external monitoring system. This wireless link enables new sensor technology to be leveraged into previously unobtainable markets; such as, internal medicine, wearable devices, and Infotainment to name a few. Wireless technology for sensor systems are a potentially disruptive technology changing the way environmental monitoring is implemented and considered.
With this BLE design reference, products can be created with new capabilities to advance current technologies for military, commercial, industrial and medical sectors in rapid succession.
ContributorsHughes, Clinton Francis (Author) / Blain Christen, Jennifer (Thesis advisor) / Ozev, Sule (Committee member) / Ogras, Umit Y. (Committee member) / Aberle, James T., 1961- (Committee member) / Arizona State University (Publisher)
Created2015
Description
Due to high level of integration in RF System on Chip (SOC), the test access points are limited to the baseband and RF inputs/outputs of the system. This limited access poses a big challenge particularly for advanced RF architectures where calibration of internal parameters is necessary and ensure proper operation. Therefore low-overhead built-in Self-Test (BIST) solution for advanced RF transceiver is proposed. In this dissertation. Firstly, comprehensive BIST solution for RF polar transceivers using on-chip resources is presented. In the receiver, phase and gain mismatches degrade sensitivity and error vector magnitude (EVM). In the transmitter, delay skew between the envelope and phase signals and the finite envelope bandwidth can create intermodulation distortion (IMD) that leads to violation of spectral mask requirements. Characterization and calibration of these parameters with analytical model would reduce the test time and cost considerably. Hence, a technique to measure and calibrate impairments of the polar transceiver in the loop-back mode is proposed.
Secondly, robust amplitude measurement technique for RF BIST application and BIST circuits for loop-back connection are discussed. Test techniques using analytical model are explained and BIST circuits are introduced.
Next, a self-compensating built-in self-test solution for RF Phased Array Mismatch is proposed. In the proposed method, a sinusoidal test signal with unknown amplitude is applied to the inputs of two adjacent phased array elements and measure the baseband output signal after down-conversion. Mathematical modeling of the circuit impairments and phased array behavior indicates that by using two distinct input amplitudes, both of which can remain unknown, it is possible to measure the important parameters of the phased array, such as gain and phase mismatch. In addition, proposed BIST system is designed and fabricated using IBM 180nm process and a prototype four-element phased-array PCB is also designed and fabricated for verifying the proposed method.
Finally, process independent gain measurement via BIST/DUT co-design is explained. Design methodology how to reduce performance impact significantly is discussed.
Simulation and hardware measurements results for the proposed techniques show that the proposed technique can characterize the targeted impairments accurately.
Secondly, robust amplitude measurement technique for RF BIST application and BIST circuits for loop-back connection are discussed. Test techniques using analytical model are explained and BIST circuits are introduced.
Next, a self-compensating built-in self-test solution for RF Phased Array Mismatch is proposed. In the proposed method, a sinusoidal test signal with unknown amplitude is applied to the inputs of two adjacent phased array elements and measure the baseband output signal after down-conversion. Mathematical modeling of the circuit impairments and phased array behavior indicates that by using two distinct input amplitudes, both of which can remain unknown, it is possible to measure the important parameters of the phased array, such as gain and phase mismatch. In addition, proposed BIST system is designed and fabricated using IBM 180nm process and a prototype four-element phased-array PCB is also designed and fabricated for verifying the proposed method.
Finally, process independent gain measurement via BIST/DUT co-design is explained. Design methodology how to reduce performance impact significantly is discussed.
Simulation and hardware measurements results for the proposed techniques show that the proposed technique can characterize the targeted impairments accurately.
ContributorsJeong, Jae Woong (Author) / Ozev, Sule (Thesis advisor) / Kitchen, Jennifer (Committee member) / Cao, Yu (Committee member) / Ogras, Umit Y. (Committee member) / Arizona State University (Publisher)
Created2015
Description
Performance failure due to aging is an increasing concern for RF circuits. While most aging studies are focused on the concept of mean-time-to-failure, for analog circuits, aging results in continuous degradation in performance before it causes catastrophic failures. In this regard, the lifetime of RF/analog circuits, which is defined as the point where at least one specification fails, is not just determined by aging at the device level, but also by the slack in the specifications, process variations, and the stress conditions on the devices. In this dissertation, firstly, a methodology for analyzing the performance degradation of RF circuits caused by aging mechanisms in MOSFET devices at design-time (pre-silicon) is presented. An algorithm to determine reliability hotspots in the circuit is proposed and design-time optimization methods to enhance the lifetime by making the most likely to fail circuit components more reliable is performed. RF circuits are used as test cases to demonstrate that the lifetime can be enhanced using the proposed design-time technique with low area and no performance impact. Secondly, in-field monitoring and recovering technique for the performance of aged RF circuits is discussed. The proposed in-field technique is based on two phases: During the design time, degradation profiles of the aged circuit are obtained through simulations. From these profiles, hotspot identification of aged RF circuits are conducted and the circuit variable that is easy to measure but highly correlated to the performance of the primary circuit is determined for a monitoring purpose. After deployment, an on-chip DC monitor is periodically activated and its results are used to monitor, and if necessary, recover the circuit performances degraded by aging mechanisms. It is also necessary to co-design the monitoring and recovery mechanism along with the primary circuit for minimal performance impact. A low noise amplifier (LNA) and LC-tank oscillators are fabricated for case studies to demonstrate that the lifetime can be enhanced using the proposed monitoring and recovery techniques in the field. Experimental results with fabricated LNA/oscillator chips show the performance degradation from the accelerated stress conditions and this loss can be recovered by the proposed mitigation scheme.
ContributorsChang, Doo Hwang (Author) / Ozev, Sule (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Kitchen, Jennifer (Committee member) / Ogras, Umit Y. (Committee member) / Arizona State University (Publisher)
Created2017
Description
Complex electronic systems include multiple power domains and drastically varying dynamic power consumption patterns, requiring the use of multiple power conversion and regulation units. High frequency switching converters have been gaining prominence in the DC-DC converter market due to smaller solution size (higher power density) and higher efficiency. As the filter components become smaller in value and size, they are unfortunately also subject to higher process variations and worse degradation profiles jeopardizing stable operation of the power supply. This dissertation presents techniques to track changes in the dynamic loop characteristics of the DC-DC converters without disturbing the normal mode of operation. A digital pseudo-noise (PN) based stimulus is used to excite the DC-DC system at various circuit nodes to calculate the corresponding closed-loop impulse response. The test signal energy is spread over a wide bandwidth and the signal analysis is achieved by correlating the PN input sequence with the disturbed output generated, thereby
accumulating the desired behavior over time. A mixed-signal cross-correlation circuit is used to derive on-chip impulse responses, with smaller memory and lower computational requirement in comparison to a digital correlator approach. Model reference based parametric and non-parametric techniques are discussed to analyze the impulse response results in both time and frequency domain. The proposed techniques can extract open-loop phase margin and closed-loop unity-gain frequency within 5.2% and 4.1% error, respectively, for the load current range of 30-200mA. Converter parameters such as natural frequency (ω_n ), quality factor (Q), and center frequency (ω_c ) can be estimated within 3.6%, 4.7%, and 3.8% error respectively, over load inductance of 4.7-10.3µH, and filter capacitance of 200-400nF. A 5-MHz switching frequency, 5-8.125V input voltage range, voltage-mode controlled DC-DC buck converter is designed for the proposed built-in self-test (BIST) analysis. The converter output voltage range is 3.3-5V and the supported maximum
load current is 450mA. The peak efficiency of the converter is 87.93%. The proposed converter is fabricated on a 0.6µm 6-layer-metal Silicon-On-Insulator (SOI) technology with a die area of 9mm^2 . The area impact due to the system identification blocks including related I/O structures is 3.8% and they consume 530µA quiescent current during operation.
accumulating the desired behavior over time. A mixed-signal cross-correlation circuit is used to derive on-chip impulse responses, with smaller memory and lower computational requirement in comparison to a digital correlator approach. Model reference based parametric and non-parametric techniques are discussed to analyze the impulse response results in both time and frequency domain. The proposed techniques can extract open-loop phase margin and closed-loop unity-gain frequency within 5.2% and 4.1% error, respectively, for the load current range of 30-200mA. Converter parameters such as natural frequency (ω_n ), quality factor (Q), and center frequency (ω_c ) can be estimated within 3.6%, 4.7%, and 3.8% error respectively, over load inductance of 4.7-10.3µH, and filter capacitance of 200-400nF. A 5-MHz switching frequency, 5-8.125V input voltage range, voltage-mode controlled DC-DC buck converter is designed for the proposed built-in self-test (BIST) analysis. The converter output voltage range is 3.3-5V and the supported maximum
load current is 450mA. The peak efficiency of the converter is 87.93%. The proposed converter is fabricated on a 0.6µm 6-layer-metal Silicon-On-Insulator (SOI) technology with a die area of 9mm^2 . The area impact due to the system identification blocks including related I/O structures is 3.8% and they consume 530µA quiescent current during operation.
ContributorsBeohar, Navankur (Author) / Bakkaloglu, Bertan (Thesis advisor) / Ozev, Sule (Committee member) / Ayyanar, Raja (Committee member) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2017
Description
Point of Load (PoL) converters are important components to the power distribution system in computer power supplies as well as automotive, space, nuclear, and medical electronics. These converters often require high output current capability, low form factor, and high conversion ratios (step-down) without sacrificing converter efficiency. This work presents hybrid silicon/gallium nitride (CMOS/GaN) power converter architectures as a solution for high-current, small form-factor PoL converters. The presented topologies use discrete GaN power devices and CMOS integrated drivers and controller loop. The presented power converters operate in the tens of MHz range to reduce the form factor by reducing the size of the off-chip passive inductor and capacitor. Higher conversion ratio is achieved through a fast control loop and the use of GaN power devices that exhibit low parasitic gate capacitance and minimize pulse swallowing.
This work compares three discrete buck power converter architectures: single-stage, multi-phase with 2 phases, and stacked-interleaved, using components-off-the-shelf (COTS). Each of the implemented power converters achieves over 80% peak efficiency with switching speeds up-to 10MHz for high conversion ratio from 24V input to 5V output and maximum load current of 10A. The performance of the three architectures is compared in open loop and closed loop configurations with respect to efficiency, output voltage ripple, and power stage form factor.
Additionally, this work presents an integrated CMOS gate driver solution in CMOS 0.35um technology. The CMOS integrated circuit (IC) includes the gate driver and the closed loop controller for directly driving a single-stage GaN architecture. The designed IC efficiently drives the GaN devices up to 20MHz switching speeds. The presented controller technique uses voltage mode control with an innovative cascode driver architecture to allow a 3.3V CMOS devices to effectively drive GaN devices that require 5V gate signal swing. Furthermore, the designed power converter is expected to operate under 400MRad of total dose, thus enabling its use in high-radiation environments for the large hadron collider at CERN and nuclear facilities.
This work compares three discrete buck power converter architectures: single-stage, multi-phase with 2 phases, and stacked-interleaved, using components-off-the-shelf (COTS). Each of the implemented power converters achieves over 80% peak efficiency with switching speeds up-to 10MHz for high conversion ratio from 24V input to 5V output and maximum load current of 10A. The performance of the three architectures is compared in open loop and closed loop configurations with respect to efficiency, output voltage ripple, and power stage form factor.
Additionally, this work presents an integrated CMOS gate driver solution in CMOS 0.35um technology. The CMOS integrated circuit (IC) includes the gate driver and the closed loop controller for directly driving a single-stage GaN architecture. The designed IC efficiently drives the GaN devices up to 20MHz switching speeds. The presented controller technique uses voltage mode control with an innovative cascode driver architecture to allow a 3.3V CMOS devices to effectively drive GaN devices that require 5V gate signal swing. Furthermore, the designed power converter is expected to operate under 400MRad of total dose, thus enabling its use in high-radiation environments for the large hadron collider at CERN and nuclear facilities.
ContributorsHegde, Ashwath (Author) / Kitchen, Jennifer (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2018
Description
As integrated technologies are scaling down, there is an increasing trend in the
process,voltage and temperature (PVT) variations of highly integrated RF systems.
Accounting for these variations during the design phase requires tremendous amount
of time for prediction of RF performance and optimizing it accordingly. Thus, there
is an increasing gap between the need to relax the RF performance requirements at
the design phase for rapid development and the need to provide high performance
and low cost RF circuits that function with PVT variations. No matter how care-
fully designed, RF integrated circuits (ICs) manufactured with advanced technology
nodes necessitate lengthy post-production calibration and test cycles with expensive
RF test instruments. Hence design-for-test (DFT) is proposed for low-cost and fast
measurement of performance parameters during both post-production and in-eld op-
eration. For example, built-in self-test (BIST) is a DFT solution for low-cost on-chip
measurement of RF performance parameters. In this dissertation, three aspects of
automated test and calibration, including DFT mathematical model, BIST hardware
and built-in calibration are covered for RF front-end blocks.
First, the theoretical foundation of a post-production test of RF integrated phased
array antennas is proposed by developing the mathematical model to measure gain
and phase mismatches between antenna elements without any electrical contact. The
proposed technique is fast, cost-efficient and uses near-field measurement of radiated
power from antennas hence, it requires single test setup, it has easy implementation
and it is short in time which makes it viable for industrialized high volume integrated
IC production test.
Second, a BIST model intended for the characterization of I/Q offset, gain and
phase mismatch of IQ transmitters without relying on external equipment is intro-
duced. The proposed BIST method is based on on-chip amplitude measurement as
in prior works however,here the variations in the BIST circuit do not affect the target
parameter estimation accuracy since measurements are designed to be relative. The
BIST circuit is implemented in 130nm technology and can be used for post-production
and in-field calibration.
Third, a programmable low noise amplifier (LNA) is proposed which is adaptable
to different application scenarios depending on the specification requirements. Its
performance is optimized with regards to required specifications e.g. distance, power
consumption, BER, data rate, etc.The statistical modeling is used to capture the
correlations among measured performance parameters and calibration modes for fast
adaptation. Machine learning technique is used to capture these non-linear correlations and build the probability distribution of a target parameter based on measurement results of the correlated parameters. The proposed concept is demonstrated by
embedding built-in tuning knobs in LNA design in 130nm technology. The tuning
knobs are carefully designed to provide independent combinations of important per-
formance parameters such as gain and linearity. Minimum number of switches are
used to provide the desired tuning range without a need for an external analog input.
process,voltage and temperature (PVT) variations of highly integrated RF systems.
Accounting for these variations during the design phase requires tremendous amount
of time for prediction of RF performance and optimizing it accordingly. Thus, there
is an increasing gap between the need to relax the RF performance requirements at
the design phase for rapid development and the need to provide high performance
and low cost RF circuits that function with PVT variations. No matter how care-
fully designed, RF integrated circuits (ICs) manufactured with advanced technology
nodes necessitate lengthy post-production calibration and test cycles with expensive
RF test instruments. Hence design-for-test (DFT) is proposed for low-cost and fast
measurement of performance parameters during both post-production and in-eld op-
eration. For example, built-in self-test (BIST) is a DFT solution for low-cost on-chip
measurement of RF performance parameters. In this dissertation, three aspects of
automated test and calibration, including DFT mathematical model, BIST hardware
and built-in calibration are covered for RF front-end blocks.
First, the theoretical foundation of a post-production test of RF integrated phased
array antennas is proposed by developing the mathematical model to measure gain
and phase mismatches between antenna elements without any electrical contact. The
proposed technique is fast, cost-efficient and uses near-field measurement of radiated
power from antennas hence, it requires single test setup, it has easy implementation
and it is short in time which makes it viable for industrialized high volume integrated
IC production test.
Second, a BIST model intended for the characterization of I/Q offset, gain and
phase mismatch of IQ transmitters without relying on external equipment is intro-
duced. The proposed BIST method is based on on-chip amplitude measurement as
in prior works however,here the variations in the BIST circuit do not affect the target
parameter estimation accuracy since measurements are designed to be relative. The
BIST circuit is implemented in 130nm technology and can be used for post-production
and in-field calibration.
Third, a programmable low noise amplifier (LNA) is proposed which is adaptable
to different application scenarios depending on the specification requirements. Its
performance is optimized with regards to required specifications e.g. distance, power
consumption, BER, data rate, etc.The statistical modeling is used to capture the
correlations among measured performance parameters and calibration modes for fast
adaptation. Machine learning technique is used to capture these non-linear correlations and build the probability distribution of a target parameter based on measurement results of the correlated parameters. The proposed concept is demonstrated by
embedding built-in tuning knobs in LNA design in 130nm technology. The tuning
knobs are carefully designed to provide independent combinations of important per-
formance parameters such as gain and linearity. Minimum number of switches are
used to provide the desired tuning range without a need for an external analog input.
ContributorsShafiee, Maryam (Author) / Ozev, Sule (Thesis advisor) / Diaz, Rodolfo (Committee member) / Ogras, Umit Y. (Committee member) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2018
Description
This work covers the design and implementation of a Parallel Doherty RF Power Amplifier in a GaN HEMT process for medium power macro-cell (16W) base station applications. This work improves the key parameters of a Doherty Power Amplifier including the peak and back-off efficiency, operational instantaneous bandwidth and output power by proposing a Parallel Doherty amplifier architecture.
As there is a progression in the wireless communication systems from the first generation to the future 5G systems, there is ever increasing demand for higher data rates which means signals with higher peak-to-average power ratios (PAPR). The present modulation schemes require PAPRs close to 8-10dB. So, there is an urgent need to develop energy efficient power amplifiers that can transmit these high data rate signals.
The Doherty Power Amplifier (DPA) is the most common PA architecture in the cellular infrastructure, as it achieves reasonably high back-off power levels with good efficiency. This work advances the DPA architecture by proposing a Parallel Doherty Power Amplifier to broaden the PAs instantaneous bandwidth, designed with frequency range of operation for 2.45 – 2.70 GHz to support WiMAX applications and future broadband signals.
As there is a progression in the wireless communication systems from the first generation to the future 5G systems, there is ever increasing demand for higher data rates which means signals with higher peak-to-average power ratios (PAPR). The present modulation schemes require PAPRs close to 8-10dB. So, there is an urgent need to develop energy efficient power amplifiers that can transmit these high data rate signals.
The Doherty Power Amplifier (DPA) is the most common PA architecture in the cellular infrastructure, as it achieves reasonably high back-off power levels with good efficiency. This work advances the DPA architecture by proposing a Parallel Doherty Power Amplifier to broaden the PAs instantaneous bandwidth, designed with frequency range of operation for 2.45 – 2.70 GHz to support WiMAX applications and future broadband signals.
ContributorsBHARDWAJ, SUMIT (Author) / Kitchen, Jennifer (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2018
Description
Flexible hybrid electronics (FHE) is emerging as a promising solution to combine the benefits of printed electronics and silicon technology. FHE has many high-impact potential areas, such as wearable applications, health monitoring, and soft robotics, due to its physical advantages, which include light weight, low cost and the ability conform to different shapes. However, physical deformations that can occur in the field lead to significant testing and validation challenges. For example, designers have to ensure that FHE devices continue to meet specs even when the components experience stress due to bending. Hence, physical deformation, which is hard to emulate, has to be part of the test procedures developed for FHE devices. This paper is the first to analyze stress experience at different parts of FHE devices under different bending conditions. Then develop a novel methodology to maximize the test coverage with minimum number of text vectors with the help of a mixed integer linear programming formulation.
ContributorsGao, Hang (Author) / Ozev, Sule (Thesis advisor) / Ogras, Umit Y. (Committee member) / Christen, Jennifer Blain (Committee member) / Arizona State University (Publisher)
Created2018
Description
This dissertation proposes and presents two different passive sigma-delta
modulator zoom Analog to Digital Converter (ADC) architectures. The first ADC is fullydifferential, synthesizable zoom-ADC architecture with a passive loop filter for lowfrequency Built in Self-Test (BIST) applications. The detailed ADC architecture and a step
by step process designing the zoom-ADC along with a synthesis tool that can target various
design specifications are presented. The design flow does not rely on extensive knowledge
of an experienced ADC designer. Two example set of BIST ADCs have been synthesized
with different performance requirements in 65nm CMOS process. The first ADC achieves
90.4dB Signal to Noise Ratio (SNR) in 512µs measurement time and consumes 17µW
power. Another example achieves 78.2dB SNR in 31.25µs measurement time and
consumes 63µW power. The second ADC architecture is a multi-mode, dynamically
zooming passive sigma-delta modulator. The architecture is based on a 5b interpolating
flash ADC as the zooming unit, and a passive discrete time sigma delta modulator as the
fine conversion unit. The proposed ADC provides an Oversampling Ratio (OSR)-
independent, dynamic zooming technique, employing an interpolating zooming front-end.
The modulator covers between 0.1 MHz and 10 MHz signal bandwidth which makes it
suitable for cellular applications including 4G radio systems. By reconfiguring the OSR,
bias current, and component parameters, optimal power consumption can be achieved for
every mode. The ADC is implemented in 0.13 µm CMOS technology and it achieves an
SNDR of 82.2/77.1/74.2/68 dB for 0.1/1.92/5/10MHz bandwidth with 1.3/5.7/9.6/11.9mW
power consumption from a 1.2 V supply.
modulator zoom Analog to Digital Converter (ADC) architectures. The first ADC is fullydifferential, synthesizable zoom-ADC architecture with a passive loop filter for lowfrequency Built in Self-Test (BIST) applications. The detailed ADC architecture and a step
by step process designing the zoom-ADC along with a synthesis tool that can target various
design specifications are presented. The design flow does not rely on extensive knowledge
of an experienced ADC designer. Two example set of BIST ADCs have been synthesized
with different performance requirements in 65nm CMOS process. The first ADC achieves
90.4dB Signal to Noise Ratio (SNR) in 512µs measurement time and consumes 17µW
power. Another example achieves 78.2dB SNR in 31.25µs measurement time and
consumes 63µW power. The second ADC architecture is a multi-mode, dynamically
zooming passive sigma-delta modulator. The architecture is based on a 5b interpolating
flash ADC as the zooming unit, and a passive discrete time sigma delta modulator as the
fine conversion unit. The proposed ADC provides an Oversampling Ratio (OSR)-
independent, dynamic zooming technique, employing an interpolating zooming front-end.
The modulator covers between 0.1 MHz and 10 MHz signal bandwidth which makes it
suitable for cellular applications including 4G radio systems. By reconfiguring the OSR,
bias current, and component parameters, optimal power consumption can be achieved for
every mode. The ADC is implemented in 0.13 µm CMOS technology and it achieves an
SNDR of 82.2/77.1/74.2/68 dB for 0.1/1.92/5/10MHz bandwidth with 1.3/5.7/9.6/11.9mW
power consumption from a 1.2 V supply.
ContributorsEROL, OSMAN EMIR (Author) / Ozev, Sule (Thesis advisor) / Kitchen, Jennifer (Committee member) / Ogras, Umit Y. (Committee member) / Blain-Christen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2018
Description
Current technology does not allow for the full amount of power produced by solar arrays (PV) on spacecraft to be utilized. The arrays are designed with non-reconfigurable architectures and sent on fifteen to twenty year long missions. They cannot be changed once they are in space, so the arrays are designed for the end of life. Throughout their lifetime, solar arrays can degrade in power producing capabilities anywhere from 20% to 50%. Because there is such a drastic difference in the beginning and end of life power production, and because they cannot be reconfigured, a new design has been found necessary in order to increase power production. Reconfiguration allows the solar arrays to achieve maximum power producing capabilities at both the beginning and end of their lives. With the potential to increase power production by 50%, the reconfiguration design consists of a switching network to be able to utilize any combination of cells. The design for reconfiguration must meet the power requirements of the solar array. This thesis will explore different designs for reconfiguration, as well as possible switches for implementation. It will also review other methods to increase power production, as well as discuss future work in this field.
ContributorsJohnson, Everett Hope (Author) / Kitchen, Jennifer (Thesis director) / Ozev, Sule (Committee member) / School of International Letters and Cultures (Contributor) / Electrical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2018-05