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- All Subjects: Electrical Engineering
- Creators: Ogras, Umit Y.
- Member of: Theses and Dissertations
- Member of: Barrett, The Honors College Thesis/Creative Project Collection
Description
As crystalline silicon solar cells continue to get thinner, the recombination of carriers at the surfaces of the cell plays an ever-important role in controlling the cell efficiency. One tool to minimize surface recombination is field effect passivation from the charges present in the thin films applied on the cell surfaces. The focus of this work is to understand the properties of charges present in the SiNx films and then to develop a mechanism to manipulate the polarity of charges to either negative or positive based on the end-application. Specific silicon-nitrogen dangling bonds (·Si-N), known as K center defects, are the primary charge trapping defects present in the SiNx films. A custom built corona charging tool was used to externally inject positive or negative charges in the SiNx film. Detailed Capacitance-Voltage (C-V) measurements taken on corona charged SiNx samples confirmed the presence of a net positive or negative charge density, as high as +/- 8 x 1012 cm-2, present in the SiNx film. High-energy (~ 4.9 eV) UV radiation was used to control and neutralize the charges in the SiNx films. Electron-Spin-Resonance (ESR) technique was used to detect and quantify the density of neutral K0 defects that are paramagnetically active. The density of the neutral K0 defects increased after UV treatment and decreased after high temperature annealing and charging treatments. Etch-back C-V measurements on SiNx films showed that the K centers are spread throughout the bulk of the SiNx film and not just near the SiNx-Si interface. It was also shown that the negative injected charges in the SiNx film were stable and present even after 1 year under indoor room-temperature conditions. Lastly, a stack of SiO2/SiNx dielectric layers applicable to standard commercial solar cells was developed using a low temperature (< 400 °C) PECVD process. Excellent surface passivation on FZ and CZ Si substrates for both n- and p-type samples was achieved by manipulating and controlling the charge in SiNx films.
ContributorsSharma, Vivek (Author) / Bowden, Stuart (Thesis advisor) / Schroder, Dieter (Committee member) / Honsberg, Christiana (Committee member) / Roedel, Ronald (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2013
Description
Photodetectors in the 1.7 to 4.0 μm range are being commercially developed on InP substrates to meet the needs of longer wavelength applications such as thermal and medical sensing. Currently, these devices utilize high indium content metamorphic Ga1-xInxAs (x > 0.53) layers to extend the wavelength range beyond the 1.7 μm achievable using lattice matched GaInAs. The large lattice mismatch required to reach the extended wavelengths results in photodetector materials that contain a large number of misfit dislocations. The low quality of these materials results in a large nonradiative Shockley Read Hall generation/recombination rate that is manifested as an undesirable large thermal noise level in these photodetectors. This work focuses on utilizing the different band structure engineering methods to design more efficient devices on InP substrates. One prospective way to improve photodetector performance at the extended wavelengths is to utilize lattice matched GaInAs/GaAsSb structures that have a type-II band alignment, where the ground state transition energy of the superlattice is smaller than the bandgap of either constituent material. Over the extended wavelength range of 2 to 3 μm this superlattice structure has an optimal period thickness of 3.4 to 5.2 nm and a wavefunction overlap of 0.8 to 0.4, respectively. In using a type-II superlattice to extend the cutoff wavelength there is a tradeoff between the wavelength reached and the electron-hole wavefunction overlap realized, and hence absorption coefficient achieved. This tradeoff and the subsequent reduction in performance can be overcome by two methods: adding bismuth to this type-II material system; applying strain on both layers in the system to attain strain-balanced condition. These allow the valance band alignment and hence the wavefunction overlap to be tuned independently of the wavelength cutoff. Adding 3% bismuth to the GaInAs constituent material, the resulting lattice matched Ga0.516In0.484As0.970Bi0.030/GaAs0.511Sb0.489superlattice realizes a 50% larger absorption coefficient. While as, similar results can be achieved with strain-balanced condition with strain limited to 1.9% on either layer. The optimal design rules derived from the different possibilities make it feasible to extract superlattice period thickness with the best absorption coefficient for any cutoff wavelength in the range.
ContributorsSharma, Ankur R (Author) / Johnson, Shane (Thesis advisor) / Goryll, Michael (Committee member) / Roedel, Ronald (Committee member) / Arizona State University (Publisher)
Created2013
Description
Switch mode DC/DC converters are suited for battery powered applications, due to their high efficiency, which help in conserving the battery lifetime. Fixed Frequency PWM based converters, which are generally used for these applications offer good voltage regulation, low ripple and excellent efficiency at high load currents. However at light load currents, fixed frequency PWM converters suffer from poor efficiencies The PFM control offers higher efficiency at light loads at the cost of a higher ripple. The PWM has a poor efficiency at light loads but good voltage ripple characteristics, due to a high switching frequency. To get the best of both control modes, both loops are used together with the control switched from one loop to another based on the load current. Such architectures are referred to as hybrid converters. While transition from PFM to PWM loop can be made by estimating the average load current, transition from PFM to PWM requires voltage or peak current sensing. This theses implements a hysteretic PFM solution for a synchronous buck converter with external MOSFET's, to achieve efficiencies of about 80% at light loads. As the PFM loop operates independently of the PWM loop, a transition circuit for automatically transitioning from PFM to PWM is implemented. The transition circuit is implemented digitally without needing any external voltage or current sensing circuit.
ContributorsVivek, Parasuram (Author) / Bakkaloglu, Bertan (Thesis advisor) / Ogras, Umit Y. (Committee member) / Song, Hongjiang (Committee member) / Arizona State University (Publisher)
Created2014
Description
ABSTRACT The D flip flop acts as a sequencing element while designing any pipelined system. Radiation Hardening by Design (RHBD) allows hardened circuits to be fabricated on commercially available CMOS manufacturing process. Recently, single event transients (SET's) have become as important as single event upset (SEU) in radiation hardened high speed digital designs. A novel temporal pulse based RHBD flip-flop design is presented. Temporally delayed pulses produced by a radiation hardened pulse generator design samples the data in three redundant pulse latches. The proposed RHBD flip-flop has been statistically designed and fabricated on 90 nm TSMC LP process. Detailed simulations of the flip-flop operation in both normal and radiation environments are presented. Spatial separation of critical nodes for the physical design of the flip-flop is carried out for mitigating multi-node charge collection upsets. The proposed flip-flop is also used in commercial CAD flows for high performance chip designs. The proposed flip-flop is used in the design and auto-place-route (APR) of an advanced encryption system and the metrics analyzed.
ContributorsKumar, Sushil (Author) / Clark, Lawrence (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Ogras, Umit Y. (Committee member) / Arizona State University (Publisher)
Created2014
Description
Increasing the conversion efficiencies of photovoltaic (PV) cells beyond the single junction theoretical limit is the driving force behind much of third generation solar cell research. Over the last half century, the experimental conversion efficiency of both single junction and tandem solar cells has plateaued as manufacturers and researchers have optimized various materials and structures. While existing materials and technologies have remarkably good conversion efficiencies, they are approaching their own limits. For example, tandem solar cells are currently well developed commercially but further improvements through increasing the number of junctions struggle with various issues related to material interfacial defects. Thus, there is a need for novel theoretical and experimental approaches leading to new third generation cell structures. Multiple exciton generation (MEG) and intermediate band (IB) solar cells have been proposed as third generation alternatives and theoretical modeling suggests they can surpass the detailed balance efficiency limits of single junction and tandem solar cells. MEG or IB solar cell has a variety of advantages enabling the use of low bandgap materials. Integrating MEG and IB with other cell types to make novel solar cells (such as MEG with tandem, IB with tandem or MEG with IB) potentially offers improvements by employing multi-physics effects in one device. This hybrid solar cell should improve the properties of conventional solar cells with a reduced number of junction, increased light-generated current and extended material selections. These multi-physics effects in hybrid solar cells can be achieved through the use of nanostructures taking advantage of the carrier confinement while using existing solar cell materials with excellent characteristics. This reduces the additional cost to develop novel materials and structures. In this dissertation, the author develops thermodynamic models for several novel types of solar cells and uses these models to optimize and compare their properties to those of existing PV cells. The results demonstrate multiple advantages from combining MEG and IB technology with existing solar cell structures.
ContributorsLee, Jongwon (Author) / Honsberg, C. (Christiana B.) (Thesis advisor) / Bowden, Stuart (Committee member) / Roedel, Ronald (Committee member) / Goodnick, Stephen (Committee member) / Schroder, Dieter (Committee member) / Arizona State University (Publisher)
Created2014
Description
Non-volatile memories (NVM) are widely used in modern electronic devices due to their non-volatility, low static power consumption and high storage density. While Flash memories are the dominant NVM technology, resistive memories such as phase change access memory (PRAM) and spin torque transfer random access memory (STT-MRAM) are gaining ground. All these technologies suffer from reliability degradation due to process variations, structural limits and material property shift. To address the reliability concerns of these NVM technologies, multi-level low cost solutions are proposed for each of them. My approach consists of first building a comprehensive error model. Next the error characteristics are exploited to develop low cost multi-level strategies to compensate for the errors. For instance, for NAND Flash memory, I first characterize errors due to threshold voltage variations as a function of the number of program/erase cycles. Next a flexible product code is designed to migrate to a stronger ECC scheme as program/erase cycles increases. An adaptive data refresh scheme is also proposed to improve memory reliability with low energy cost for applications with different data update frequencies. For PRAM, soft errors and hard errors models are built based on shifts in the resistance distributions. Next I developed a multi-level error control approach involving bit interleaving and subblock flipping at the architecture level, threshold resistance tuning at the circuit level and programming current profile tuning at the device level. This approach helped reduce the error rate significantly so that it was now sufficient to use a low cost ECC scheme to satisfy the memory reliability constraint. I also studied the reliability of a PRAM+DRAM hybrid memory system and analyzed the tradeoffs between memory performance, programming energy and lifetime. For STT-MRAM, I first developed an error model based on process variations. I developed a multi-level approach to reduce the error rates that consisted of increasing the W/L ratio of the access transistor, increasing the voltage difference across the memory cell and adjusting the current profile during write operation. This approach enabled use of a low cost BCH based ECC scheme to achieve very low block failure rates.
ContributorsYang, Chengen (Author) / Chakrabarti, Chaitali (Thesis advisor) / Cao, Yu (Committee member) / Ogras, Umit Y. (Committee member) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2014
Description
The research objective is fully differential op-amp with common mode feedback, which are applied in filter, band gap, Analog Digital Converter (ADC) and so on as a fundamental component in analog circuit. Having modeled various defect and analyzed corresponding probability, defect library could be built after reduced defect simulation.Based on the resolution of microscope scan tool, all these defects are categorized into four groups of defects by both function and location, bias circuit defect, first stage amplifier defect, output stage defect and common mode feedback defect, separately. Each fault result is attributed to one of these four region defects.Therefore, analog testing algorithm and automotive tool could be generated to assist testing engineers to meet the demand of large numbers of chips.
ContributorsLu, Zhijian (Author) / Ozev, Sule (Thesis advisor) / Kiaei, Sayfe (Committee member) / Ogras, Umit Y. (Committee member) / Arizona State University (Publisher)
Created2014
Description
Three dimensional (3-D) ultrasound is safe, inexpensive, and has been shown to drastically improve system ease-of-use, diagnostic efficiency, and patient throughput. However, its high computational complexity and resulting high power consumption has precluded its use in hand-held applications.
In this dissertation, algorithm-architecture co-design techniques that aim to make hand-held 3-D ultrasound a reality are presented. First, image enhancement methods to improve signal-to-noise ratio (SNR) are proposed. These include virtual source firing techniques and a low overhead digital front-end architecture using orthogonal chirps and orthogonal Golay codes.
Second, algorithm-architecture co-design techniques to reduce the power consumption of 3-D SAU imaging systems is presented. These include (i) a subaperture multiplexing strategy and the corresponding apodization method to alleviate the signal bandwidth bottleneck, and (ii) a highly efficient iterative delay calculation method to eliminate complex operations such as multiplications, divisions and square-root in delay calculation during beamforming. These techniques were used to define Sonic Millip3De, a 3-D die stacked architecture for digital beamforming in SAU systems. Sonic Millip3De produces 3-D high resolution images at 2 frames per second with system power consumption of 15W in 45nm technology.
Third, a new beamforming method based on separable delay decomposition is proposed to reduce the computational complexity of the beamforming unit in an SAU system. The method is based on minimizing the root-mean-square error (RMSE) due to delay decomposition. It reduces the beamforming complexity of a SAU system by 19x while providing high image fidelity that is comparable to non-separable beamforming. The resulting modified Sonic Millip3De architecture supports a frame rate of 32 volumes per second while maintaining power consumption of 15W in 45nm technology.
Next a 3-D plane-wave imaging system that utilizes both separable beamforming and coherent compounding is presented. The resulting system has computational complexity comparable to that of a non-separable non-compounding baseline system while significantly improving contrast-to-noise ratio and SNR. The modified Sonic Millip3De architecture is now capable of generating high resolution images at 1000 volumes per second with 9-fire-angle compounding.
In this dissertation, algorithm-architecture co-design techniques that aim to make hand-held 3-D ultrasound a reality are presented. First, image enhancement methods to improve signal-to-noise ratio (SNR) are proposed. These include virtual source firing techniques and a low overhead digital front-end architecture using orthogonal chirps and orthogonal Golay codes.
Second, algorithm-architecture co-design techniques to reduce the power consumption of 3-D SAU imaging systems is presented. These include (i) a subaperture multiplexing strategy and the corresponding apodization method to alleviate the signal bandwidth bottleneck, and (ii) a highly efficient iterative delay calculation method to eliminate complex operations such as multiplications, divisions and square-root in delay calculation during beamforming. These techniques were used to define Sonic Millip3De, a 3-D die stacked architecture for digital beamforming in SAU systems. Sonic Millip3De produces 3-D high resolution images at 2 frames per second with system power consumption of 15W in 45nm technology.
Third, a new beamforming method based on separable delay decomposition is proposed to reduce the computational complexity of the beamforming unit in an SAU system. The method is based on minimizing the root-mean-square error (RMSE) due to delay decomposition. It reduces the beamforming complexity of a SAU system by 19x while providing high image fidelity that is comparable to non-separable beamforming. The resulting modified Sonic Millip3De architecture supports a frame rate of 32 volumes per second while maintaining power consumption of 15W in 45nm technology.
Next a 3-D plane-wave imaging system that utilizes both separable beamforming and coherent compounding is presented. The resulting system has computational complexity comparable to that of a non-separable non-compounding baseline system while significantly improving contrast-to-noise ratio and SNR. The modified Sonic Millip3De architecture is now capable of generating high resolution images at 1000 volumes per second with 9-fire-angle compounding.
ContributorsYang, Ming (Author) / Chakrabarti, Chaitali (Thesis advisor) / Papandreou-Suppappola, Antonia (Committee member) / Karam, Lina (Committee member) / Frakes, David (Committee member) / Ogras, Umit Y. (Committee member) / Arizona State University (Publisher)
Created2015
Description
Mobile platforms are becoming highly heterogeneous by combining a powerful multiprocessor system-on-chip (MpSoC) with numerous resources including display, memory, power management IC (PMIC), battery and wireless modems into a compact package. Furthermore, the MpSoC itself is a heterogeneous resource that integrates many processing elements such as CPU cores, GPU, video, image, and audio processors. As a result, optimization approaches targeting mobile computing needs to consider the platform at various levels of granularity.
Platform energy consumption and responsiveness are two major considerations for mobile systems since they determine the battery life and user satisfaction, respectively. In this work, the models for power consumption, response time, and energy consumption of heterogeneous mobile platforms are presented. Then, these models are used to optimize the energy consumption of baseline platforms under power, response time, and temperature constraints with and without introducing new resources. It is shown, the optimal design choices depend on dynamic power management algorithm, and adding new resources is more energy efficient than scaling existing resources alone. The framework is verified through actual experiments on Qualcomm Snapdragon 800 based tablet MDP/T. Furthermore, usage of the framework at both design and runtime optimization is also presented.
Platform energy consumption and responsiveness are two major considerations for mobile systems since they determine the battery life and user satisfaction, respectively. In this work, the models for power consumption, response time, and energy consumption of heterogeneous mobile platforms are presented. Then, these models are used to optimize the energy consumption of baseline platforms under power, response time, and temperature constraints with and without introducing new resources. It is shown, the optimal design choices depend on dynamic power management algorithm, and adding new resources is more energy efficient than scaling existing resources alone. The framework is verified through actual experiments on Qualcomm Snapdragon 800 based tablet MDP/T. Furthermore, usage of the framework at both design and runtime optimization is also presented.
ContributorsGupta, Ujjwala (Author) / Ogras, Umit Y. (Thesis advisor) / Ozev, Sule (Committee member) / Chakrabarti, Chaitali (Committee member) / Arizona State University (Publisher)
Created2014
Description
Switching Converters (SC) are an excellent choice for hand held devices due to their high power conversion efficiency. However, they suffer from two major drawbacks. The first drawback is that their dynamic response is sensitive to variations in inductor (L) and capacitor (C) values. A cost effective solution is implemented by designing a programmable digital controller. Despite variations in L and C values, the target dynamic response can be achieved by computing and programming the filter coefficients for a particular L and C. Besides, digital controllers have higher immunity to environmental changes such as temperature and aging of components. The second drawback of SCs is their poor efficiency during low load conditions if operated in Pulse Width Modulation (PWM) mode. However, if operated in Pulse Frequency Modulation (PFM) mode, better efficiency numbers can be achieved. A mostly-digital way of detecting PFM mode is implemented. Besides, a slow serial interface to program the chip, and a high speed serial interface to characterize mixed signal blocks as well as to ship data in or out for debug purposes are designed. The chip is taped out in 0.18µm IBM's radiation hardened CMOS process technology. A test board is built with the chip, external power FETs and driver IC. At the time of this writing, PWM operation, PFM detection, transitions between PWM and PFM, and both serial interfaces are validated on the test board.
ContributorsMumma Reddy, Abhiram (Author) / Bakkaloglu, Bertan (Thesis advisor) / Ogras, Umit Y. (Committee member) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2014