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- All Subjects: Electrical Engineering
- Creators: Vittal, Vijay
- Creators: Holbert, Keith E.
- Creators: Yu, Hongbin
- Creators: Barrett, The Honors College
Description
Semiconductor nanowires are featured by their unique one-dimensional structure which makes them promising for small scale electronic and photonic device applications. Among them, III-V material nanowires are particularly outstanding due to their good electronic properties. In bulk, these materials reveal electron mobility much higher than conventional silicon based devices, for example at room temperature, InAs field effect transistor (FET) has electron mobility of 40,000 cm2/Vs more than 10 times of Si FET. This makes such materials promising for high speed nanowire FETs. With small bandgap, such as 0.354 eV for InAs and 1.52 eV for GaAs, it does not need high voltage to turn on such devices which leads to low power consumption devices. Another feature of direct bandgap allows their applications of optoelectronic devices such as avalanche photodiodes. However, there are challenges to face up. Due to their large surface to volume ratio, nanowire devices typically are strongly affected by the surface states. Although nanowires can be grown into single crystal structure, people observe crystal defects along the wires which can significantly affect the performance of devices. In this work, FETs made of two types of III-V nanowire, GaAs and InAs, are demonstrated. These nanowires are grown by catalyst-free MOCVD growth method. Vertically nanowires are transferred onto patterned substrates for coordinate calibration. Then electrodes are defined by e-beam lithography followed by deposition of contact metals. Prior to metal deposition, however, the substrates are dipped in ammonium hydroxide solution to remove native oxide layer formed on nanowire surface. Current vs. source-drain voltage with different gate bias are measured at room temperature. GaAs nanowire FETs show photo response while InAs nanowire FETs do not show that. Surface passivation is performed on GaAs FETs by using ammonium surfide solution. The best results on current increase is observed with around 20-30 minutes chemical treatment time. Gate response measurements are performed at room temperature, from which field effect mobility as high as 1490 cm2/Vs is extracted for InAs FETs. One major contributor for this is stacking faults defect existing along nanowires. For InAs FETs, thermal excitations observed from temperature dependent results which leads us to investigate potential barriers.
ContributorsLiang, Hanshuang (Author) / Yu, Hongbin (Thesis advisor) / Ferry, David (Committee member) / Tracy, Clarence (Committee member) / Arizona State University (Publisher)
Created2011
Description
Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles trapped in the Earth's magnetosphere, the solar wind, and cosmic rays. This constant radiation exposure leads to early end-of-life expectancies for many electronic parts. Exposure to ionizing radiation increases the density of oxide and interfacial defects in bipolar oxides leading to an increase in base current in bipolar junction transistors. Radiation-induced excess base current is the primary cause of current gain degradation. Analysis of base current response can enable the measurement of defects generated by radiation exposure. In addition to radiation, the space environment is also characterized by extreme temperature fluctuations. Temperature, like radiation, also has a very strong impact on base current. Thus, a technique for separating the effects of radiation from thermal effects is necessary in order to accurately measure radiation-induced damage in space. This thesis focuses on the extraction of radiation damage in lateral PNP bipolar junction transistors and the space environment. It also describes the measurement techniques used and provides a quantitative analysis methodology for separating radiation and thermal effects on the bipolar base current.
ContributorsCampola, Michael J (Author) / Barnaby, Hugh J (Thesis advisor) / Holbert, Keith E. (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2011
Description
A workload-aware low-power neuromorphic controller for dynamic power and thermal management in VLSI systems is presented. The neuromorphic controller predicts future workload and temperature values based on the past values and CPU performance counters and preemptively regulates supply voltage and frequency. System-level measurements from stateof-the-art commercial microprocessors are used to get workload, temperature and CPU performance counter values. The controller is designed and simulated using circuit-design and synthesis tools. At device-level, on-chip planar inductors suffer from low inductance occupying large chip area. On-chip inductors with integrated magnetic materials are designed, simulated and fabricated to explore performance-efficiency trade offs and explore potential applications such as resonant clocking and on-chip voltage regulation. A system level study is conducted to evaluate the effect of on-chip voltage regulator employing magnetic inductors as the output filter. It is concluded that neuromorphic power controller is beneficial for fine-grained per-core power management in conjunction with on-chip voltage regulators utilizing scaled magnetic inductors.
ContributorsSinha, Saurabh (Author) / Cao, Yu (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Yu, Hongbin (Committee member) / Christen, Jennifer B. (Committee member) / Arizona State University (Publisher)
Created2011
Description
Lossy compression is a form of compression that slightly degrades a signal in ways that are ideally not detectable to the human ear. This is opposite to lossless compression, in which the sample is not degraded at all. While lossless compression may seem like the best option, lossy compression, which is used in most audio and video, reduces transmission time and results in much smaller file sizes. However, this compression can affect quality if it goes too far. The more compression there is on a waveform, the more degradation there is, and once a file is lossy compressed, this process is not reversible. This project will observe the degradation of an audio signal after the application of Singular Value Decomposition compression, a lossy compression that eliminates singular values from a signal’s matrix.
ContributorsHirte, Amanda (Author) / Kosut, Oliver (Thesis director) / Bliss, Daniel (Committee member) / Electrical Engineering Program (Contributor, Contributor) / Barrett, The Honors College (Contributor)
Created2021-05
Description
Recent changes in the energy markets structure combined with the conti-nuous load growth have caused power systems to be operated under more stressed conditions. In addition, the nature of power systems has also grown more complex and dynamic because of the increasing use of long inter-area tie-lines and the high motor loads especially those comprised mainly of residential single phase A/C motors. Therefore, delayed voltage recovery, fast voltage collapse and short term voltage stability issues in general have obtained significant importance in relia-bility studies. Shunt VAr injection has been used as a countermeasure for voltage instability. However, the dynamic and fast nature of short term voltage instability requires fast and sufficient VAr injection, and therefore dynamic VAr devices such as Static VAr Compensators (SVCs) and STATic COMpensators (STAT-COMs) are used. The location and size of such devices are optimized in order to improve their efficiency and reduce initial costs. In this work time domain dy-namic analysis was used to evaluate trajectory voltage sensitivities for each time step. Linear programming was then performed to determine the optimal amount of required VAr injection at each bus, using voltage sensitivities as weighting factors. Optimal VAr injection values from different operating conditions were weighted and averaged in order to obtain a final setting of the VAr requirement. Some buses under consideration were either assigned very small VAr injection values, or not assigned any value at all. Therefore, the approach used in this work was found to be useful in not only determining the optimal size of SVCs, but also their location.
ContributorsSalloum, Ahmed (Author) / Vittal, Vijay (Thesis advisor) / Heydt, Gerald (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2011
Description
This research work describes the design of a fault current limiter (FCL) using digital logic and a microcontroller based data acquisition system for an ultra fast pilot protection system. These systems have been designed according to the requirements of the Future Renewable Electric Energy Delivery and Management (FREEDM) system (or loop), a 1 MW green energy hub. The FREEDM loop merges advanced power electronics technology with information tech-nology to form an efficient power grid that can be integrated with the existing power system. With the addition of loads to the FREEDM system, the level of fault current rises because of increased energy flow to supply the loads, and this requires the design of a limiter which can limit this current to a level which the existing switchgear can interrupt. The FCL limits the fault current to around three times the rated current. Fast switching Insulated-gate bipolar transistor (IGBT) with its gate control logic implements a switching strategy which enables this operation. A complete simulation of the system was built on Simulink and it was verified that the FCL limits the fault current to 1000 A compared to more than 3000 A fault current in the non-existence of a FCL. This setting is made user-defined. In FREEDM system, there is a need to interrupt a fault faster or make intelligent deci-sions relating to fault events, to ensure maximum availability of power to the loads connected to the system. This necessitates fast acquisition of data which is performed by the designed data acquisition system. The microcontroller acquires the data from a current transformer (CT). Mea-surements are made at different points in the FREEDM system and merged together, to input it to the intelligent protection algorithm that has been developed by another student on the project. The algorithm will generate a tripping signal in the event of a fault. The developed hardware and the programmed software to accomplish data acquisition and transmission are presented here. The designed FCL ensures that the existing switchgear equipments need not be replaced thus aiding future power system expansion. The developed data acquisition system enables fast fault sensing in protection schemes improving its reliability.
ContributorsThirumalai, Arvind (Author) / Karady, George G. (Thesis advisor) / Vittal, Vijay (Committee member) / Hedman, Kory (Committee member) / Arizona State University (Publisher)
Created2011
Description
The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologies in harsh radiation environments has resulted in a new approach to radiation effects mitigation. This approach utilizes simulation to support the design of integrated circuits (ICs) to meet targeted tolerance specifications. Modeling the deleterious impact of ionizing radiation on ICs fabricated in advanced CMOS technologies requires understanding and analyzing the basic mechanisms that result in buildup of radiation-induced defects in specific sensitive regions. Extensive experimental studies have demonstrated that the sensitive regions are shallow trench isolation (STI) oxides. Nevertheless, very little work has been done to model the physical mechanisms that result in the buildup of radiation-induced defects and the radiation response of devices fabricated in these technologies. A comprehensive study of the physical mechanisms contributing to the buildup of radiation-induced oxide trapped charges and the generation of interface traps in advanced CMOS devices is presented in this dissertation. The basic mechanisms contributing to the buildup of radiation-induced defects are explored using a physical model that utilizes kinetic equations that captures total ionizing dose (TID) and dose rate effects in silicon dioxide (SiO2). These mechanisms are formulated into analytical models that calculate oxide trapped charge density (Not) and interface trap density (Nit) in sensitive regions of deep-submicron devices. Experiments performed on field-oxide-field-effect-transistors (FOXFETs) and metal-oxide-semiconductor (MOS) capacitors permit investigating TID effects and provide a comparison for the radiation response of advanced CMOS devices. When used in conjunction with closed-form expressions for surface potential, the analytical models enable an accurate description of radiation-induced degradation of transistor electrical characteristics. In this dissertation, the incorporation of TID effects in advanced CMOS devices into surface potential based compact models is also presented. The incorporation of TID effects into surface potential based compact models is accomplished through modifications of the corresponding surface potential equations (SPE), allowing the inclusion of radiation-induced defects (i.e., Not and Nit) into the calculations of surface potential. Verification of the compact modeling approach is achieved via comparison with experimental data obtained from FOXFETs fabricated in a 90 nm low-standby power commercial bulk CMOS technology and numerical simulations of fully-depleted (FD) silicon-on-insulator (SOI) n-channel transistors.
ContributorsSanchez Esqueda, Ivan (Author) / Barnaby, Hugh J (Committee member) / Schroder, Dieter (Thesis advisor) / Schroder, Dieter K. (Committee member) / Holbert, Keith E. (Committee member) / Gildenblat, Gennady (Committee member) / Arizona State University (Publisher)
Created2011
Description
CMOS technology is expected to enter the 10nm regime for future integrated circuits (IC). Such aggressive scaling leads to vastly increased variability, posing a grand challenge to robust IC design. Variations in CMOS are often divided into two types: intrinsic variations and process-induced variations. Intrinsic variations are limited by fundamental physics. They are inherent to CMOS structure, considered as one of the ultimate barriers to the continual scaling of CMOS devices. In this work the three primary intrinsic variations sources are studied, including random dopant fluctuation (RDF), line-edge roughness (LER) and oxide thickness fluctuation (OTF). The research is focused on the modeling and simulation of those variations and their scaling trends. Besides the three variations, a time dependent variation source, Random Telegraph Noise (RTN) is also studied. Different from the other three variations, RTN does not contribute much to the total variation amount, but aggregate the worst case of Vth variations in CMOS. In this work a TCAD based simulation study on RTN is presented, and a new SPICE based simulation method for RTN is proposed for time domain circuit analysis. Process-induced variations arise from the imperfection in silicon fabrication, and vary from foundries to foundries. In this work the layout dependent Vth shift due to Rapid-Thermal Annealing (RTA) are investigated. In this work, we develop joint thermal/TCAD simulation and compact modeling tools to analyze performance variability under various layout pattern densities and RTA conditions. Moreover, we propose a suite of compact models that bridge the underlying RTA process with device parameter change for efficient design optimization.
ContributorsYe, Yun, Ph.D (Author) / Cao, Yu (Thesis advisor) / Yu, Hongbin (Committee member) / Song, Hongjiang (Committee member) / Clark, Lawrence (Committee member) / Arizona State University (Publisher)
Created2011
Description
Hydropower generation is one of the clean renewable energies which has received great attention in the power industry. Hydropower has been the leading source of renewable energy. It provides more than 86% of all electricity generated by renewable sources worldwide. Generally, the life span of a hydropower plant is considered as 30 to 50 years. Power plants over 30 years old usually conduct a feasibility study of rehabilitation on their entire facilities including infrastructure. By age 35, the forced outage rate increases by 10 percentage points compared to the previous year. Much longer outages occur in power plants older than 20 years. Consequently, the forced outage rate increases exponentially due to these longer outages. Although these long forced outages are not frequent, their impact is immense. If reasonable timing of rehabilitation is missed, an abrupt long-term outage could occur and additional unnecessary repairs and inefficiencies would follow. On the contrary, too early replacement might cause the waste of revenue. The hydropower plants of Korea Water Resources Corporation (hereafter K-water) are utilized for this study. Twenty-four K-water generators comprise the population for quantifying the reliability of each equipment. A facility in a hydropower plant is a repairable system because most failures can be fixed without replacing the entire facility. The fault data of each power plant are collected, within which only forced outage faults are considered as raw data for reliability analyses. The mean cumulative repair functions (MCF) of each facility are determined with the failure data tables, using Nelson's graph method. The power law model, a popular model for a repairable system, can also be obtained to represent representative equipment and system availability. The criterion-based analysis of HydroAmp is used to provide more accurate reliability of each power plant. Two case studies are presented to enhance the understanding of the availability of each power plant and represent economic evaluations for modernization. Also, equipment in a hydropower plant is categorized into two groups based on their reliability for determining modernization timing and their suitable replacement periods are obtained using simulation.
ContributorsKwon, Ogeuk (Author) / Holbert, Keith E. (Thesis advisor) / Heydt, Gerald T (Committee member) / Pan, Rong (Committee member) / Arizona State University (Publisher)
Created2011
Description
The electric transmission grid is conventionally treated as a fixed asset and is operated around a single topology. Though several instances of switching transmission lines for corrective mechaism, congestion management, and minimization of losses can be found in literature, the idea of co-optimizing transmission with generation dispatch has not been widely investigated. Network topology optimization exploits the redundancies that are an integral part of the network to allow for improvement in dispatch efficiency. Although, the concept of a dispatchable network initially appears counterintuitive questioning the wisdom of switching transmission lines on a more regu-lar basis, results obtained in the previous research on transmission switching with a Direct Current Optimal Power Flow (DCOPF) show significant cost reductions. This thesis on network topology optimization with ACOPF emphasizes the need for additional research in this area. It examines the performance of network topology optimization in an Alternating Current (AC) setting and its impact on various parameters like active power loss and voltages that are ignored in the DC setting. An ACOPF model, with binary variables representing the status of transmission lines incorporated into the formulation, is written in AMPL, a mathematical programming language and this optimization problem is solved using the solver KNITRO. ACOPF is a non-convex, nonlinear optimization problem, making it a very hard problem to solve. The introduction of bi-nary variables makes ACOPF a mixed integer nonlinear programming problem, further increasing the complexity of the optimization problem. An iterative method of opening each transmission line individually before choosing the best solution has been proposed as a purely investigative approach to studying the impact of transmission switching with ACOPF. Economic savings of up to 6% achieved using this approach indicate the potential of this concept. In addition, a heuristic has been proposed to improve the computational efficiency of network topology optimization. This research also makes a comparative analysis between transmission switching in a DC setting and switching in an AC setting. Results presented in this thesis indicate significant economic savings achieved by controlled topology optimization, thereby reconfirming the need for further examination of this idea.
ContributorsPotluri, Tejaswi (Author) / Hedman, Kory (Thesis advisor) / Vittal, Vijay (Committee member) / Heydt, Gerald (Committee member) / Arizona State University (Publisher)
Created2011