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- All Subjects: Electrical Engineering
- Creators: Yu, Hongbin
Description
Semiconductor nanowires are featured by their unique one-dimensional structure which makes them promising for small scale electronic and photonic device applications. Among them, III-V material nanowires are particularly outstanding due to their good electronic properties. In bulk, these materials reveal electron mobility much higher than conventional silicon based devices, for example at room temperature, InAs field effect transistor (FET) has electron mobility of 40,000 cm2/Vs more than 10 times of Si FET. This makes such materials promising for high speed nanowire FETs. With small bandgap, such as 0.354 eV for InAs and 1.52 eV for GaAs, it does not need high voltage to turn on such devices which leads to low power consumption devices. Another feature of direct bandgap allows their applications of optoelectronic devices such as avalanche photodiodes. However, there are challenges to face up. Due to their large surface to volume ratio, nanowire devices typically are strongly affected by the surface states. Although nanowires can be grown into single crystal structure, people observe crystal defects along the wires which can significantly affect the performance of devices. In this work, FETs made of two types of III-V nanowire, GaAs and InAs, are demonstrated. These nanowires are grown by catalyst-free MOCVD growth method. Vertically nanowires are transferred onto patterned substrates for coordinate calibration. Then electrodes are defined by e-beam lithography followed by deposition of contact metals. Prior to metal deposition, however, the substrates are dipped in ammonium hydroxide solution to remove native oxide layer formed on nanowire surface. Current vs. source-drain voltage with different gate bias are measured at room temperature. GaAs nanowire FETs show photo response while InAs nanowire FETs do not show that. Surface passivation is performed on GaAs FETs by using ammonium surfide solution. The best results on current increase is observed with around 20-30 minutes chemical treatment time. Gate response measurements are performed at room temperature, from which field effect mobility as high as 1490 cm2/Vs is extracted for InAs FETs. One major contributor for this is stacking faults defect existing along nanowires. For InAs FETs, thermal excitations observed from temperature dependent results which leads us to investigate potential barriers.
ContributorsLiang, Hanshuang (Author) / Yu, Hongbin (Thesis advisor) / Ferry, David (Committee member) / Tracy, Clarence (Committee member) / Arizona State University (Publisher)
Created2011
Description
A workload-aware low-power neuromorphic controller for dynamic power and thermal management in VLSI systems is presented. The neuromorphic controller predicts future workload and temperature values based on the past values and CPU performance counters and preemptively regulates supply voltage and frequency. System-level measurements from stateof-the-art commercial microprocessors are used to get workload, temperature and CPU performance counter values. The controller is designed and simulated using circuit-design and synthesis tools. At device-level, on-chip planar inductors suffer from low inductance occupying large chip area. On-chip inductors with integrated magnetic materials are designed, simulated and fabricated to explore performance-efficiency trade offs and explore potential applications such as resonant clocking and on-chip voltage regulation. A system level study is conducted to evaluate the effect of on-chip voltage regulator employing magnetic inductors as the output filter. It is concluded that neuromorphic power controller is beneficial for fine-grained per-core power management in conjunction with on-chip voltage regulators utilizing scaled magnetic inductors.
ContributorsSinha, Saurabh (Author) / Cao, Yu (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Yu, Hongbin (Committee member) / Christen, Jennifer B. (Committee member) / Arizona State University (Publisher)
Created2011
Description
CMOS technology is expected to enter the 10nm regime for future integrated circuits (IC). Such aggressive scaling leads to vastly increased variability, posing a grand challenge to robust IC design. Variations in CMOS are often divided into two types: intrinsic variations and process-induced variations. Intrinsic variations are limited by fundamental physics. They are inherent to CMOS structure, considered as one of the ultimate barriers to the continual scaling of CMOS devices. In this work the three primary intrinsic variations sources are studied, including random dopant fluctuation (RDF), line-edge roughness (LER) and oxide thickness fluctuation (OTF). The research is focused on the modeling and simulation of those variations and their scaling trends. Besides the three variations, a time dependent variation source, Random Telegraph Noise (RTN) is also studied. Different from the other three variations, RTN does not contribute much to the total variation amount, but aggregate the worst case of Vth variations in CMOS. In this work a TCAD based simulation study on RTN is presented, and a new SPICE based simulation method for RTN is proposed for time domain circuit analysis. Process-induced variations arise from the imperfection in silicon fabrication, and vary from foundries to foundries. In this work the layout dependent Vth shift due to Rapid-Thermal Annealing (RTA) are investigated. In this work, we develop joint thermal/TCAD simulation and compact modeling tools to analyze performance variability under various layout pattern densities and RTA conditions. Moreover, we propose a suite of compact models that bridge the underlying RTA process with device parameter change for efficient design optimization.
ContributorsYe, Yun, Ph.D (Author) / Cao, Yu (Thesis advisor) / Yu, Hongbin (Committee member) / Song, Hongjiang (Committee member) / Clark, Lawrence (Committee member) / Arizona State University (Publisher)
Created2011
Description
In this work, I worked on the synthesis and characterization of nanowires and belts, grown using different materials, in Chemical Vapor Deposition (CVD) system with catalytic growth method. Through this thesis, I utilized the Photoluminescence (PL), Secondary Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS) and X-ray diffraction (XRD) analyses to find out the properties of Erbium Chloride Silicate (ECS) and two segment CdS-CdSe samples. In the first part of my research, growth of very new material, Erbium Chloride Silicate (ECS), in form of core/shell Si/ECS and pure ECS nanowires, was demonstrated. This new material has very fascinating properties for new Si based photonic devices. The Erbium density in those nanowires is which is very high value compared to the other Erbium doped materials. It was shown that the luminescence peaks of ECS nanowires are very sharp and stronger than their counterparts. Furthermore, both PL and XRD peaks get sharper and stronger as growth temperature increases and this shows that crystalline quality of ECS nanowires gets better with higher temperature. In the second part, I did a very detail research for growing two segment axial nanowires or radial belts and report that the structure type mostly depends on the growth temperature. Since our final step is to create white light LEDs using single axial nanowires which have three different regions grown with distinct materials and give red, green and blue colors simultaneously, we worked on growing CdS-CdSe nanowires or belts for the first step of our aim. Those products were successfully grown and they gave two luminescence peaks with maximum 160 nm wavelength separation depending on the growth conditions. It was observed that products become more likely belt once the substrate temperature increases. Also, dominance between VLS and VS is very critical to determine the shape of the products and the substitution of CdS by CdSe is very effective; hence, CdSe growth time should be chosen accordingly. However, it was shown two segmented products can be synthesized by picking the right conditions and with very careful analyses. We also demonstrated that simultaneous two colors lasing from a single segmented belt structures is possible with strong enough-pumping-power.
ContributorsTurkdogan, Sunay (Author) / Ning, Cun-Zheng (Thesis advisor) / Tao, Meng (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2012
Description
Studying charge transport through single molecules tethered between two metal electrodes is of fundamental importance in molecular electronics. Over the years, a variety of methods have been developed in attempts of performing such measurements. However, the limitation of these techniques is still one of the factors that prohibit one from gaining a thorough understanding of single molecule junctions. Firstly, the time resolution of experiments is typically limited to milli to microseconds, while molecular dynamics simulations are carried out on the time scale of pico to nanoseconds. A huge gap therefore persists between the theory and the experiments. This thesis demonstrates a nanosecond scale measurement of the gold atomic contact breakdown process. A combined setup of DC and AC circuits is employed, where the AC circuit reveals interesting observations in nanosecond scale not previously seen using conventional DC circuits. The breakdown time of gold atomic contacts is determined to be faster than 0.1 ns and subtle atomic events are observed within nanoseconds. Furthermore, a new method based on the scanning tunneling microscope break junction (STM-BJ) technique is developed to rapidly record thousands of I-V curves from repeatedly formed single molecule junctions. 2-dimensional I-V and conductance-voltage (G-V) histograms constructed using the acquired data allow for more meaningful statistical analysis to single molecule I-V characteristics. The bias voltage adds an additional dimension to the conventional single molecule conductance measurement. This method also allows one to perform transition voltage spectra (TVS) for individual junctions and to study the correlation between the conductance and the tunneling barrier height. The variation of measured conductance values is found to be primarily determined by the poorly defined contact geometry between the molecule and metal electrodes, rather than the tunnel barrier height. In addition, the rapid I-V technique is also found useful in studying thermoelectric effect in single molecule junctions. When applying a temperature gradient between the STM tip and substrate in air, the offset current at zero bias in the I-V characteristics is a measure of thermoelectric current. The rapid I-V technique allows for statistical analysis of such offset current at different temperature gradients and thus the Seebeck coefficient of single molecule junctions is measured. Combining with single molecule TVS, the Seebeck coefficient is also found to be a measure of tunnel barrier height.
ContributorsGuo, Shaoyin (Author) / Tao, Nongjian (Thesis advisor) / Bennett, Peter (Committee member) / Ning, Cun-Zheng (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2012
Description
In today's world there is a great need for sensing methods as tools to provide critical information to solve today's problems in security applications. Real time detection of trace chemicals, such as explosives, in a complex environment containing various interferents using a portable device that can be reliably deployed in a field has been a difficult challenge. A hybrid nanosensor based on the electrochemical reduction of trinitrotoluene (TNT) and the interaction of the reduction products with conducting polymer nanojunctions in an ionic liquid was fabricated. The sensor simultaneously measures the electrochemical current from the reduction of TNT and the conductance change of the polymer nanojunction caused from the reduction product. The hybrid detection mechanism, together with the unique selective preconcentration capability of the ionic liquid, provides a selective, fast, and sensitive detection of TNT. The sensor, in its current form, is capable of detecting parts per trillion level TNT in the presence of various interferents within a few minutes. A novel hybrid electrochemical-colorimetric (EC-C) sensing platform was also designed and fabricated to meet these challenges. The hybrid sensor is based on electrochemical reactions of trace explosives, colorimetric detection of the reaction products, and unique properties of the explosives in an ionic liquid (IL). This approach affords not only increased sensitivity but also selectivity as evident from the demonstrated null rate of false positives and low detection limits. Using an inexpensive webcam a detection limit of part per billion in volume (ppbV) has been achieved and demonstrated selective detection of explosives in the presence of common interferences (perfumes, mouth wash, cleaners, petroleum products, etc.). The works presented in this dissertation, were published in the Journal of the American Chemical Society (JACS, 2009) and Nano Letters (2010), won first place in the National Defense Research contest in (2009) and has been granted a patent (WO 2010/030874 A1). In addition, other work related to conductive polymer junctions and their sensing capabilities has been published in Applied Physics Letters (2005) and IEEE sensors journal (2008).
ContributorsDiaz Aguilar, Alvaro (Author) / Tao, Nongjian (Thesis advisor) / Tsui, Raymond (Committee member) / Barnaby, Hugh (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2012
Description
Built-in-Self-Test (BiST) for transmitters is a desirable choice since it eliminates the reliance on expensive instrumentation to do RF signal analysis. Existing on-chip resources, such as power or envelope detectors, or small additional circuitry can be used for BiST purposes. However, due to limited bandwidth, measurement of complex specifications, such as IQ imbalance, is challenging. In this work, a BiST technique to compute transmitter IQ imbalances using measurements out of a self-mixing envelope detector is proposed. Both the linear and non linear parameters of the RF transmitter path are extracted successfully. We first derive an analytical expression for the output signal. Using this expression, we devise test signals to isolate the effects of gain and phase imbalance, DC offsets, time skews and system nonlinearity from other parameters of the system. Once isolated, these parameters are calculated easily with a few mathematical operations. Simulations and hardware measurements show that the technique can provide accurate characterization of IQ imbalances. One of the glaring advantages of this method is that, the impairments are extracted from analyzing the response at baseband frequency and thereby eliminating the need of high frequency ATE (Automated Test Equipment).
ContributorsByregowda, Srinath (Author) / Ozev, Sule (Thesis advisor) / Cao, Yu (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2012
Description
This thesis summarizes the research work carried out on design, modeling and simulation of semiconductor nanophotonic devices. The research includes design of nanowire (NW) lasers, modeling of active plasmonic waveguides, design of plasmonic nano-lasers, and design of all-semiconductor plasmonic systems. For the NW part, a comparative study of electrical injection in the longitudinal p-i-n and coaxial p-n core-shell NWs was performed. It is found that high density carriers can be efficiently injected into and confined in the core-shell structure. The required bias voltage and doping concentrations in the core-shell structure are smaller than those in the longitudinal p-i-n structure. A new device structure with core-shell configuration at the p and n contact regions for electrically driven single NW laser was proposed. Through a comprehensive design trade-off between threshold gain and threshold voltage, room temperature lasing has been proved in the laser with low threshold current and large output efficiency. For the plasmonic part, the propagation of surface plasmon polariton (SPP) in a metal-semiconductor-metal structure where semiconductor is highly excited to have an optical gain was investigated. It is shown that near the resonance the SPP mode experiences an unexpected giant modal gain that is 1000 times of the material gain in the semiconductor and the corresponding confinement factor is as high as 105. The physical origin of the giant modal gain is the slowing down of the average energy propagation in the structure. Secondly, SPP modes lasing in a metal-insulator-semiconductor multi-layer structure was investigated. It is shown that the lasing threshold can be reduced by structural optimization. A specific design example was optimized using AlGaAs/GaAs/AlGaAs single quantum well sandwiched between silver layers. This cavity has a physical volume of 1.5×10-4 λ03 which is the smallest nanolaser reported so far. Finally, the all-semiconductor based plasmonics was studied. It is found that InAs is superior to other common semiconductors for plasmonic application in mid-infrared range. A plasmonic system made of InAs, GaSb and AlSb layers, consisting of a plasmonic source, waveguide and detector was proposed. This on-chip integrated system is realizable in a single epitaxial growth process.
ContributorsLi, Debin (Author) / Ning, Cun-Zheng (Thesis advisor) / Zhang, Yong-Hang (Committee member) / Balanis, Constantine A (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2012
Description
Nanowires (NWs) have attracted many interests due to their advance in synthesis and their unique structural, electrical and optical properties. NWs have been realized as promising candidates for future photonic platforms. In this work, erbium chloride silicate (ECS), CdS and CdSSe NWs growth by vapor-liquid-solid mechanism and their characterization were demonstrated. In the ECS NWs part, systematic experiments were performed to investigate the relation between growth temperature and NWs structure. Scanning electron microscopy, Raman spectroscopy, X-ray diffraction and photoluminescence characterization were used to study the NWs morphology, crystal quality and optical properties. At low growth temperature, there was strong Si Raman signal observed indicating ECS NWs have Si core. At high growth temperature, the excess Si signal was disappeared and the NWs showed better crystal quality and optical properties. The growth temperature is the key parameter that will induce the transition from Si/ECS core-shell NWs structure to solid ECS NWs. With the merits of high Er concentration and long PL lifetime, ECS NWs can serve as optical gain material with emission at 1.5 μm for communications and amplifiers. In the CdS, CdSSe NWs part, the band gap engineering of CdSSe NWs with spatial composition tuning along single NWs were demonstrated. The first step of realizing CdSSe NWs was the controlled growth of CdS NWs. It showed that overall pressure would largely affect the lengths of the CdS NWs. NWs with longer length can be obtained at higher pressure. Then, based on CdS NWs growth and by adding CdSe step by step, composition graded CdSSe alloy NWs were successfully synthesized. The temperature control over the source vapor concentration plays the key role for the growth.
ContributorsNing, Hao (Author) / Ning, Cunzheng (Thesis advisor) / Yu, Hongbin (Committee member) / Zhang, Yong-Hang (Committee member) / Arizona State University (Publisher)
Created2012
Description
What can classical chaos do to quantum systems is a fundamental issue highly relevant to a number of branches in physics. The field of quantum chaos has been active for three decades, where the focus was on non-relativistic quantumsystems described by the Schr¨odinger equation. By developing an efficient method to solve the Dirac equation in the setting where relativistic particles can tunnel between two symmetric cavities through a potential barrier, chaotic cavities are found to suppress the spread in the tunneling rate. Tunneling rate for any given energy assumes a wide range that increases with the energy for integrable classical dynamics. However, for chaotic underlying dynamics, the spread is greatly reduced. A remarkable feature, which is a consequence of Klein tunneling, arise only in relativistc quantum systems that substantial tunneling exists even for particle energy approaching zero. Similar results are found in graphene tunneling devices, implying high relevance of relativistic quantum chaos to the development of such devices. Wave propagation through random media occurs in many physical systems, where interesting phenomena such as branched, fracal-like wave patterns can arise. The generic origin of these wave structures is currently a matter of active debate. It is of fundamental interest to develop a minimal, paradigmaticmodel that can generate robust branched wave structures. In so doing, a general observation in all situations where branched structures emerge is non-Gaussian statistics of wave intensity with an algebraic tail in the probability density function. Thus, a universal algebraic wave-intensity distribution becomes the criterion for the validity of any minimal model of branched wave patterns. Coexistence of competing species in spatially extended ecosystems is key to biodiversity in nature. Understanding the dynamical mechanisms of coexistence is a fundamental problem of continuous interest not only in evolutionary biology but also in nonlinear science. A continuous model is proposed for cyclically competing species and the effect of the interplay between the interaction range and mobility on coexistence is investigated. A transition from coexistence to extinction is uncovered with a non-monotonic behavior in the coexistence probability and switches between spiral and plane-wave patterns arise. Strong mobility can either promote or hamper coexistence, while absent in lattice-based models, can be explained in terms of nonlinear partial differential equations.
ContributorsNi, Xuan (Author) / Lai, Ying-Cheng (Thesis advisor) / Huang, Liang (Committee member) / Yu, Hongbin (Committee member) / Akis, Richard (Committee member) / Arizona State University (Publisher)
Created2012