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Description
Fluxgate sensors are magnetic field sensors that can measure DC and low frequency AC magnetic fields. They can measure much lower magnetic fields than other magnetic sensors like Hall effect sensors, magnetoresistive sensors etc. They also have high linearity, high sensitivity and low noise. The major application of fluxgate sensors

Fluxgate sensors are magnetic field sensors that can measure DC and low frequency AC magnetic fields. They can measure much lower magnetic fields than other magnetic sensors like Hall effect sensors, magnetoresistive sensors etc. They also have high linearity, high sensitivity and low noise. The major application of fluxgate sensors is in magnetometers for the measurement of earth's magnetic field. Magnetometers are used in navigation systems and electronic compasses. Fluxgate sensors can also be used to measure high DC currents. Integrated micro-fluxgate sensors have been developed in recent years. These sensors have much lower power consumption and area compared to their PCB counterparts. The output voltage of micro-fluxgate sensors is very low which makes the analog front end more complex and results in an increase in power consumption of the system. In this thesis a new analog front-end circuit for micro-fluxgate sensors is developed. This analog front-end circuit uses charge pump based excitation circuit and phase delay based read-out chain. With these two features the power consumption of analog front-end is reduced. The output is digital and it is immune to amplitude noise at the output of the sensor. Digital output is produced without using an ADC. A SPICE model of micro-fluxgate sensor is used to verify the operation of the analog front-end and the simulation results show very good linearity.
ContributorsPappu, Karthik (Author) / Bakkaloglu, Bertan (Thesis advisor) / Christen, Jennifer Blain (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2013
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Description
This thesis summarizes modeling and simulation of plasmonic waveguides and nanolasers. The research includes modeling of dielectric constants of doped semiconductor as a potential plasmonic material, simulation of plasmonic waveguides with different configurations and geometries, simulation and design of plasmonic nanolasers. In the doped semiconductor part, a more accurate model

This thesis summarizes modeling and simulation of plasmonic waveguides and nanolasers. The research includes modeling of dielectric constants of doped semiconductor as a potential plasmonic material, simulation of plasmonic waveguides with different configurations and geometries, simulation and design of plasmonic nanolasers. In the doped semiconductor part, a more accurate model accounting for dielectric constant of doped InAs was proposed. In the model, Interband transitions accounted for by Adachi's model considering Burstein-Moss effect and free electron effect governed by Drude model dominate in different spectral regions. For plasmonic waveguide part, Insulator-Metal-Insulator (IMI) waveguide, silver nanowire waveguide with and without substrate, Metal-Semiconductor-Metal (MSM) waveguide and Metal-Insulator-Semiconductor-Insulator-Metal (MISIM) waveguide were investigated respectively. Modal analysis was given for each part. Lastly, a comparative study of plasmonic and optical modes in an MSM disk cavity was performed by FDTD simulation for room temperature at the telecommunication wavelength. The results show quantitatively that plasmonic modes have advantages over optical modes in the scalability down to small size and the cavity Quantum Electrodynamics(QED) effects due to the possibility of breaking the diffraction limit. Surprisingly for lasing characteristics, though plasmonic modes have large loss as expected, minimal achievable threshold can be attained for whispering gallery plasmonic modes with azimuthal number of 2 by optimizing cavity design at 1.55µm due to interplay of metal loss and radiation loss.
ContributorsWang, Haotong (Author) / Ning, Cunzheng (Thesis advisor) / Palais, Joseph (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2014
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Description
Semiconductor nanowires are important candidates for highly scaled three dimensional electronic devices. It is very advantageous to combine their scaling capability with the high yield of planar CMOS technology by integrating nanowire devices into planar circuits. The purpose of this research is to identify the challenges associated with the fabrication

Semiconductor nanowires are important candidates for highly scaled three dimensional electronic devices. It is very advantageous to combine their scaling capability with the high yield of planar CMOS technology by integrating nanowire devices into planar circuits. The purpose of this research is to identify the challenges associated with the fabrication of vertically oriented Si and Ge nanowire diodes and modeling their electrical behavior so that they can be utilized to create unique three dimensional architectures that can boost the scaling of electronic devices into the next generation. In this study, vertical Ge and Si nanowire Schottky diodes have been fabricated using bottom-up vapor-liquid-solid (VLS) and top-down reactive ion etching (RIE) approaches respectively. VLS growth yields nanowires with atomically smooth sidewalls at sub-50 nm diameters but suffers from the problem that the doping increases radially outwards from the core of the devices. RIE is much faster than VLS and does not suffer from the problem of non-uniform doping. However, it yields nanowires with rougher sidewalls and gets exceedingly inefficient in yielding vertical nanowires for diameters below 50 nm. The I-V characteristics of both Ge and Si nanowire diodes cannot be adequately fit by the thermionic emission model. Annealing in forming gas which passivates dangling bonds on the nanowire surface is shown to have a considerable impact on the current through the Si nanowire diodes indicating that fixed charges and traps on the surface of the devices play a major role in determining their electrical behavior. Also, due to the vertical geometry of the nanowire diodes, electric field lines originating from the metal and terminating on their sidewalls can directly modulate their conductivity. Both these effects have to be included in the model aimed at predicting the current through vertical nanowire diodes. This study shows that the current through vertical nanowire diodes cannot be predicted accurately using the thermionic emission model which is suitable for planar devices and identifies the factors needed to build a comprehensive analytical model for predicting the current through vertically oriented nanowire diodes.
ContributorsChandra, Nishant (Author) / Goodnick, Stephen M (Thesis advisor) / Tracy, Clarence J. (Committee member) / Yu, Hongbin (Committee member) / Ferry, David K. (Committee member) / Arizona State University (Publisher)
Created2014
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Description
With increasing demand for System on Chip (SoC) and System in Package (SiP) design in computer and communication technologies, integrated inductor which is an essential passive component has been widely used in numerous integrated circuits (ICs) such as in voltage regulators and RF circuits. In this work, soft ferromagnetic core

With increasing demand for System on Chip (SoC) and System in Package (SiP) design in computer and communication technologies, integrated inductor which is an essential passive component has been widely used in numerous integrated circuits (ICs) such as in voltage regulators and RF circuits. In this work, soft ferromagnetic core material, amorphous Co-Zr-Ta-B, was incorporated into on-chip and in-package inductors in order to scale down inductors and improve inductors performance in both inductance density and quality factor. With two layers of 500 nm Co-Zr-Ta-B films a 3.5X increase in inductance and a 3.9X increase in quality factor over inductors without magnetic films were measured at frequencies as high as 1 GHz. By laminating technology, up to 9.1X increase in inductance and more than 5X increase in quality factor (Q) were obtained from stripline inductors incorporated with 50 nm by 10 laminated films with a peak Q at 300 MHz. It was also demonstrated that this peak Q can be pushed towards high frequency as far as 1GHz by a combination of patterning magnetic films into fine bars and laminations. The role of magnetic vias in magnetic flux and eddy current control was investigated by both simulation and experiment using different patterning techniques and by altering the magnetic via width. Finger-shaped magnetic vias were designed and integrated into on-chip RF inductors improving the frequency of peak quality factor from 400 MHz to 800 MHz without sacrificing inductance enhancement. Eddy current and magnetic flux density in different areas of magnetic vias were analyzed by HFSS 3D EM simulation. With optimized magnetic vias, high frequency response of up to 2 GHz was achieved. Furthermore, the effect of applied magnetic field on on-chip inductors was investigated for high power applications. It was observed that as applied magnetic field along the hard axis (HA) increases, inductance maintains similar value initially at low fields, but decreases at larger fields until the magnetic films become saturated. The high frequency quality factor showed an opposite trend which is correlated to the reduction of ferromagnetic resonant absorption in the magnetic film. In addition, experiments showed that this field-dependent inductance change varied with different patterned magnetic film structures, including bars/slots and fingers structures. Magnetic properties of Co-Zr-Ta-B films on standard organic package substrates including ABF and polyimide were also characterized. Effects of substrate roughness and stress were analyzed and simulated which provide strategies for integrating Co-Zr-Ta-B into package inductors and improving inductors performance. Stripline and spiral inductors with Co-Zr-Ta-B films were fabricated on both ABF and polyimide substrates. Maximum 90% inductance increase in hundreds MHz frequency range were achieved in stripline inductors which are suitable for power delivery applications. Spiral inductors with Co-Zr-Ta-B films showed 18% inductance increase with quality factor of 4 at frequency up to 3 GHz.
ContributorsWu, Hao (Author) / Yu, Hongbin (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Cao, Yu (Committee member) / Chickamenahalli, Shamala (Committee member) / Arizona State University (Publisher)
Created2013
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Description
Zinc oxide (ZnO), a naturally n-type semiconductor has been identified as a promising candidate to replace indium tin oxide (ITO) as the transparent electrode in solar cells, because of its wide bandgap (3.37 eV), abundant source materials and suitable refractive index (2.0 at 600 nm). Spray deposition is a convenient

Zinc oxide (ZnO), a naturally n-type semiconductor has been identified as a promising candidate to replace indium tin oxide (ITO) as the transparent electrode in solar cells, because of its wide bandgap (3.37 eV), abundant source materials and suitable refractive index (2.0 at 600 nm). Spray deposition is a convenient and low cost technique for large area and uniform deposition of semiconductor thin films. In particular, it provides an easier way to dope the film by simply adding the dopant precursor into the starting solution. In order to reduce the resistivity of undoped ZnO, many works have been done by doping in the ZnO with either group IIIA elements or VIIA elements using spray pyrolysis. However, the resistivity is still too high to meet TCO's resistivity requirement. In the present work, a novel co-spray deposition technique is developed to bypass a fundamental limitation in the conventional spray deposition technique, i.e. the deposition of metal oxides from incompatible precursors in the starting solution. With this technique, ZnO films codoped with one cationic dopant, Al, Cr, or Fe, and an anionic dopant, F, have been successfully synthesized, in which F is incompatible with all these three cationic dopants. Two starting solutions were prepared and co-sprayed through two separate spray heads. One solution contained only the F precursor, NH 4F. The second solution contained the Zn and one cationic dopant precursors, Zn(O 2CCH 3) 2 and AlCl 3, CrCl 3, or FeCl 3. The deposition was carried out at 500 &degC; on soda-lime glass in air. Compared to singly-doped ZnO thin films, codoped ZnO samples showed better electrical properties. Besides, a minimum sheet resistance, 55.4 Ω/sq, was obtained for Al and F codoped ZnO films after vacuum annealing at 400 &degC;, which was lower than singly-doped ZnO with either Al or F. The transmittance for the Al and F codoped ZnO samples was above 90% in the visible range. This co-spray deposition technique provides a simple and cost-effective way to synthesize metal oxides from incompatible precursors with improved properties.
ContributorsZhou, Bin (Author) / Tao, Meng (Thesis advisor) / Goryll, Michael (Committee member) / Vasileska, Dragica (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2013
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Description
This dissertation introduces stochastic ordering of instantaneous channel powers of fading channels as a general method to compare the performance of a communication system over two different channels, even when a closed-form expression for the metric may not be available. Such a comparison is with respect to a variety of

This dissertation introduces stochastic ordering of instantaneous channel powers of fading channels as a general method to compare the performance of a communication system over two different channels, even when a closed-form expression for the metric may not be available. Such a comparison is with respect to a variety of performance metrics such as error rates, outage probability and ergodic capacity, which share common mathematical properties such as monotonicity, convexity or complete monotonicity. Complete monotonicity of a metric, such as the symbol error rate, in conjunction with the stochastic Laplace transform order between two fading channels implies the ordering of the two channels with respect to the metric. While it has been established previously that certain modulation schemes have convex symbol error rates, there is no study of the complete monotonicity of the same, which helps in establishing stronger channel ordering results. Toward this goal, the current research proves for the first time, that all 1-dimensional and 2-dimensional modulations have completely monotone symbol error rates. Furthermore, it is shown that the frequently used parametric fading distributions for modeling line of sight exhibit a monotonicity in the line of sight parameter with respect to the Laplace transform order. While the Laplace transform order can also be used to order fading distributions based on the ergodic capacity, there exist several distributions which are not Laplace transform ordered, although they have ordered ergodic capacities. To address this gap, a new stochastic order called the ergodic capacity order has been proposed herein, which can be used to compare channels based on the ergodic capacity. Using stochastic orders, average performance of systems involving multiple random variables are compared over two different channels. These systems include diversity combining schemes, relay networks, and signal detection over fading channels with non-Gaussian additive noise. This research also addresses the problem of unifying fading distributions. This unification is based on infinite divisibility, which subsumes almost all known fading distributions, and provides simplified expressions for performance metrics, in addition to enabling stochastic ordering.
ContributorsRajan, Adithya (Author) / Tepedelenlioğlu, Cihan (Thesis advisor) / Papandreou-Suppappola, Antonia (Committee member) / Bliss, Daniel (Committee member) / Kosut, Oliver (Committee member) / Arizona State University (Publisher)
Created2014
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Description
Recently, the location of the nodes in wireless networks has been modeled as point processes. In this dissertation, various scenarios of wireless communications in large-scale networks modeled as point processes are considered. The first part of the dissertation considers signal reception and detection problems with symmetric alpha stable noise which

Recently, the location of the nodes in wireless networks has been modeled as point processes. In this dissertation, various scenarios of wireless communications in large-scale networks modeled as point processes are considered. The first part of the dissertation considers signal reception and detection problems with symmetric alpha stable noise which is from an interfering network modeled as a Poisson point process. For the signal reception problem, the performance of space-time coding (STC) over fading channels with alpha stable noise is studied. We derive pairwise error probability (PEP) of orthogonal STCs. For general STCs, we propose a maximum-likelihood (ML) receiver, and its approximation. The resulting asymptotically optimal receiver (AOR) does not depend on noise parameters and is computationally simple, and close to the ML performance. Then, signal detection in coexisting wireless sensor networks (WSNs) is considered. We define a binary hypothesis testing problem for the signal detection in coexisting WSNs. For the problem, we introduce the ML detector and simpler alternatives. The proposed mixed-fractional lower order moment (FLOM) detector is computationally simple and close to the ML performance. Stochastic orders are binary relations defined on probability. The second part of the dissertation introduces stochastic ordering of interferences in large-scale networks modeled as point processes. Since closed-form results for the interference distributions for such networks are only available in limited cases, it is of interest to compare network interferences using stochastic. In this dissertation, conditions on the fading distribution and path-loss model are given to establish stochastic ordering between interferences. Moreover, Laplace functional (LF) ordering is defined between point processes and applied for comparing interference. Then, the LF orderings of general classes of point processes are introduced. It is also shown that the LF ordering is preserved when independent operations such as marking, thinning, random translation, and superposition are applied. The LF ordering of point processes is a useful tool for comparing spatial deployments of wireless networks and can be used to establish comparisons of several performance metrics such as coverage probability, achievable rate, and resource allocation even when closed form expressions for such metrics are unavailable.
ContributorsLee, Junghoon (Author) / Tepedelenlioğlu, Cihan (Thesis advisor) / Spanias, Andreas (Committee member) / Reisslein, Martin (Committee member) / Kosut, Oliver (Committee member) / Arizona State University (Publisher)
Created2014
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Description
Nanolasers represents the research frontier in both the areas of photonics and nanotechnology for its interesting properties in low dimension physics, its appealing prospects in integrated photonics, and other on-chip applications. In this thesis, I present my research work on fabrication and characterization of a new type of nanolasers: metallic

Nanolasers represents the research frontier in both the areas of photonics and nanotechnology for its interesting properties in low dimension physics, its appealing prospects in integrated photonics, and other on-chip applications. In this thesis, I present my research work on fabrication and characterization of a new type of nanolasers: metallic cavity nanolasers. The last ten years witnessed a dramatic paradigm shift from pure dielectric cavity to metallic cavity in the research of nanolasers. By using low loss metals such as silver, which is highly reflective at near infrared, light can be confined in an ultra small cavity or waveguide with sub-wavelength dimensions, thus enabling sub-wavelength cavity lasers. Based on this idea, I fabricated two different kinds of metallic cavity nanolasers with rectangular and circular geometries with InGaAs as the gain material and silver as the metallic shell. The lasing wavelength is around 1.55 μm, intended for optical communication applications. Continuous wave (CW) lasing at cryogenic temperature under current injection was achieved on devices with a deep sub-wavelength physical cavity volume smaller than 0.2 λ3. Improving device fabrication process is one of the main challenges in the development of metallic cavity nanolasers due to its ultra-small size. With improved fabrication process and device design, CW lasing at room temperature was demonstrated as well on a sub-wavelength rectangular device with a physical cavity volume of 0.67 λ3. Experiments verified that a small circular nanolasers supporting TE¬01 mode can generate an azimuthal polarized laser beam, providing a compact such source under electrical injection. Sources with such polarizations could have many special applications. Study of digital modulation of circular nanolasers showed that laser noise is an important factor that will affect the data rate of the nanolaser when used as the light source in optical interconnects. For future development, improving device fabrication processes is required to improve device performance. In addition, techniques need to be developed to realize nanolaser/Si waveguide integration. In essence, resolving these two critical issues will finally pave the way for these nanolasers to be used in various practical applications.
ContributorsDing, Kang (Author) / Ning, Cun-Zheng (Thesis advisor) / Yu, Hongbin (Committee member) / Palais, Joseph (Committee member) / Zhang, Yong-Hang (Committee member) / Arizona State University (Publisher)
Created2014
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Description
The problem of cooperative radar and communications signaling is investigated. Each system typically considers the other system a source of interference. Consequently, the tradition is to have them operate in orthogonal frequency bands. By considering the radar and communications operations to be a single joint system, performance bounds on a

The problem of cooperative radar and communications signaling is investigated. Each system typically considers the other system a source of interference. Consequently, the tradition is to have them operate in orthogonal frequency bands. By considering the radar and communications operations to be a single joint system, performance bounds on a receiver that observes communications and radar return in the same frequency allocation are derived. Bounds in performance of the joint system is measured in terms of data information rate for communications and radar estimation information rate for the radar. Inner bounds on performance are constructed.
ContributorsChiriyath, Alex (Author) / Bliss, Daniel W (Thesis advisor) / Kosut, Oliver (Committee member) / Berisha, Visar (Committee member) / Arizona State University (Publisher)
Created2014
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Description
The electric power system is one of the largest, most complicated, and most important cyber-physical systems in the world. The link between the cyber and physical level is the Supervisory Control and Data Acquisition (SCADA) systems and Energy Management Systems (EMS). Their functions include monitoring the real-time system operation

The electric power system is one of the largest, most complicated, and most important cyber-physical systems in the world. The link between the cyber and physical level is the Supervisory Control and Data Acquisition (SCADA) systems and Energy Management Systems (EMS). Their functions include monitoring the real-time system operation through state estimation (SE), controlling the system to operate reliably, and optimizing the system operation efficiency. The SCADA acquires the noisy measurements, such as voltage angle and magnitude, line power flows, and line current magnitude, from the remote terminal units (RTUs). These raw data are firstly sent to the SE, which filters all the noisy data and derives the best estimate of the system state. Then the estimated states are used for other EMS functions, such as contingency analysis, optimal power flow, etc.

In the existing state estimation process, there is no defense mechanism for any malicious attacks. Once the communication channel between the SCADA and RTUs is hijacked by the attacker, the attacker can perform a man-in-middle attack and send data of its choice. The only step that can possibly detect the attack during the state estimation process is the bad data detector. Unfortunately, even the bad data detector is unable to detect a certain type of attack, known as the false data injection (FDI) attacks.

Diagnosing the physical consequences of such attacks, therefore, is very important to understand system stability. In this thesis, theoretical general attack models for AC and DC attacks are given and an optimization problem for the worst-case overload attack is formulated. Furthermore, physical consequences of FDI attacks, based on both DC and AC model, are addressed. Various scenarios with different attack targets and system configurations are simulated. The details of the research, results obtained and conclusions drawn are presented in this document.
ContributorsLiang, Jingwen (Author) / Sankar, Lalitha (Thesis advisor) / Kosut, Oliver (Thesis advisor) / Hedman, Kory (Committee member) / Arizona State University (Publisher)
Created2015