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Description
An embedded HVDC system is a dc link with at least two ends being physically connected within a single synchronous ac network. The thesis reviews previous works on embedded HVDC, proposes a dynamic embedded HVDC model by PSCAD program, and compares the transient stability performance among AC, DC and embedded

An embedded HVDC system is a dc link with at least two ends being physically connected within a single synchronous ac network. The thesis reviews previous works on embedded HVDC, proposes a dynamic embedded HVDC model by PSCAD program, and compares the transient stability performance among AC, DC and embedded HVDC. The test results indicate that by installing the embedded HVDC, AC network transient stability performance has been largely improved. Therefore the thesis designs a novel frequency control topology for embedded HVDC. According to the dynamic performance test results, when the embedded HVDC system equipped with a frequency control, the system transient stability will be improved further.
ContributorsYu, Jicheng (Author) / Karady, George G. (Thesis advisor) / Hui, Yu (Committee member) / Holbert, Keith E. (Committee member) / Arizona State University (Publisher)
Created2013
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Description
Recent trends in the electric power industry have led to more attention to optimal operation of power transformers. In a deregulated environment, optimal operation means minimizing the maintenance and extending the life of this critical and costly equipment for the purpose of maximizing profits. Optimal utilization of a transformer can

Recent trends in the electric power industry have led to more attention to optimal operation of power transformers. In a deregulated environment, optimal operation means minimizing the maintenance and extending the life of this critical and costly equipment for the purpose of maximizing profits. Optimal utilization of a transformer can be achieved through the use of dynamic loading. A benefit of dynamic loading is that it allows better utilization of the transformer capacity, thus increasing the flexibility and reliability of the power system. This document presents the progress on a software application which can estimate the maximum time-varying loading capability of transformers. This information can be used to load devices closer to their limits without exceeding the manufacturer specified operating limits. The maximally efficient dynamic loading of transformers requires a model that can accurately predict both top-oil temperatures (TOTs) and hottest-spot temperatures (HSTs). In the previous work, two kinds of thermal TOT and HST models have been studied and used in the application: the IEEE TOT/HST models and the ASU TOT/HST models. And, several metrics have been applied to evaluate the model acceptability and determine the most appropriate models for using in the dynamic loading calculations. In this work, an investigation to improve the existing transformer thermal models performance is presented. Some factors that may affect the model performance such as improper fan status and the error caused by the poor performance of IEEE models are discussed. Additional methods to determine the reliability of transformer thermal models using metrics such as time constant and the model parameters are also provided. A new production grade application for real-time dynamic loading operating purpose is introduced. This application is developed by using an existing planning application, TTeMP, as a start point, which is designed for the dispatchers and load specialists. To overcome the limitations of TTeMP, the new application can perform dynamic loading under emergency conditions, such as loss-of transformer loading. It also has the capability to determine the emergency rating of the transformers for a real-time estimation.
ContributorsZhang, Ming (Author) / Tylavsky, Daniel J (Thesis advisor) / Ayyanar, Raja (Committee member) / Holbert, Keith E. (Committee member) / Arizona State University (Publisher)
Created2013
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Description
As crystalline silicon solar cells continue to get thinner, the recombination of carriers at the surfaces of the cell plays an ever-important role in controlling the cell efficiency. One tool to minimize surface recombination is field effect passivation from the charges present in the thin films applied on the cell

As crystalline silicon solar cells continue to get thinner, the recombination of carriers at the surfaces of the cell plays an ever-important role in controlling the cell efficiency. One tool to minimize surface recombination is field effect passivation from the charges present in the thin films applied on the cell surfaces. The focus of this work is to understand the properties of charges present in the SiNx films and then to develop a mechanism to manipulate the polarity of charges to either negative or positive based on the end-application. Specific silicon-nitrogen dangling bonds (·Si-N), known as K center defects, are the primary charge trapping defects present in the SiNx films. A custom built corona charging tool was used to externally inject positive or negative charges in the SiNx film. Detailed Capacitance-Voltage (C-V) measurements taken on corona charged SiNx samples confirmed the presence of a net positive or negative charge density, as high as +/- 8 x 1012 cm-2, present in the SiNx film. High-energy (~ 4.9 eV) UV radiation was used to control and neutralize the charges in the SiNx films. Electron-Spin-Resonance (ESR) technique was used to detect and quantify the density of neutral K0 defects that are paramagnetically active. The density of the neutral K0 defects increased after UV treatment and decreased after high temperature annealing and charging treatments. Etch-back C-V measurements on SiNx films showed that the K centers are spread throughout the bulk of the SiNx film and not just near the SiNx-Si interface. It was also shown that the negative injected charges in the SiNx film were stable and present even after 1 year under indoor room-temperature conditions. Lastly, a stack of SiO2/SiNx dielectric layers applicable to standard commercial solar cells was developed using a low temperature (< 400 °C) PECVD process. Excellent surface passivation on FZ and CZ Si substrates for both n- and p-type samples was achieved by manipulating and controlling the charge in SiNx films.
ContributorsSharma, Vivek (Author) / Bowden, Stuart (Thesis advisor) / Schroder, Dieter (Committee member) / Honsberg, Christiana (Committee member) / Roedel, Ronald (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2013
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Description
Underground cables have been widely used in big cities. This is because underground cables offer the benefits of reducing visual impact and the disturbance caused by bad weather (wind, ice, snow, and the lightning strikes). Additionally, when placing power lines underground, the maintenance costs can also be reduced as a

Underground cables have been widely used in big cities. This is because underground cables offer the benefits of reducing visual impact and the disturbance caused by bad weather (wind, ice, snow, and the lightning strikes). Additionally, when placing power lines underground, the maintenance costs can also be reduced as a result. The underground cable rating calculation is the most critical part of designing the cable construction and cable installation. In this thesis, three contributions regarding the cable ampacity study have been made. First, an analytical method for rating of underground cables has been presented. Second, this research also develops the steady state and transient ratings for Salt River Project (SRP) 69 kV underground system using the commercial software CYMCAP for several typical substations. Third, to find an alternative way to predict the cable ratings, three regression models have been built. The residual plot and mean square error for the three methods have been analyzed. The conclusion is dawn that the nonlinear regression model provides the sufficient accuracy of the cable rating prediction for SRP's typical installation.
ContributorsWang, Tong (Author) / Tylavsky, Daniel (Thesis advisor) / Karady, George G. (Committee member) / Holbert, Keith E. (Committee member) / Arizona State University (Publisher)
Created2013
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Description
A fully automated logic design methodology for radiation hardened by design (RHBD) high speed logic using fine grained triple modular redundancy (TMR) is presented. The hardening techniques used in the cell library are described and evaluated, with a focus on both layout techniques that mitigate total ionizing dose (TID) and

A fully automated logic design methodology for radiation hardened by design (RHBD) high speed logic using fine grained triple modular redundancy (TMR) is presented. The hardening techniques used in the cell library are described and evaluated, with a focus on both layout techniques that mitigate total ionizing dose (TID) and latchup issues and flip-flop designs that mitigate single event transient (SET) and single event upset (SEU) issues. The base TMR self-correcting master-slave flip-flop is described and compared to more traditional hardening techniques. Additional refinements are presented, including testability features that disable the self-correction to allow detection of manufacturing defects. The circuit approach is validated for hardness using both heavy ion and proton broad beam testing. For synthesis and auto place and route, the methodology and circuits leverage commercial logic design automation tools. These tools are glued together with custom CAD tools designed to enable easy conversion of standard single redundant hardware description language (HDL) files into hardened TMR circuitry. The flow allows hardening of any synthesizable logic at clock frequencies comparable to unhardened designs and supports standard low-power techniques, e.g. clock gating and supply voltage scaling.
ContributorsHindman, Nathan (Author) / Clark, Lawrence T (Thesis advisor) / Holbert, Keith E. (Committee member) / Barnaby, Hugh (Committee member) / Allee, David (Committee member) / Arizona State University (Publisher)
Created2012
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Description
The dissolution of metal layers such as silver into chalcogenide glass layers such as germanium selenide changes the resistivity of the metal and chalcogenide films by a great extent. It is known that the incorporation of the metal can be achieved by ultra violet light exposure or thermal processes. In

The dissolution of metal layers such as silver into chalcogenide glass layers such as germanium selenide changes the resistivity of the metal and chalcogenide films by a great extent. It is known that the incorporation of the metal can be achieved by ultra violet light exposure or thermal processes. In this work, the use of metal dissolution by exposure to gamma radiation has been explored for radiation sensor applications. Test structures were designed and a process flow was developed for prototype sensor fabrication. The test structures were designed such that sensitivity to radiation could be studied. The focus is on the effect of gamma rays as well as ultra violet light on silver dissolution in germanium selenide (Ge30Se70) chalcogenide glass. Ultra violet radiation testing was used prior to gamma exposure to assess the basic mechanism. The test structures were electrically characterized prior to and post irradiation to assess resistance change due to metal dissolution. A change in resistance was observed post irradiation and was found to be dependent on the radiation dose. The structures were also characterized using atomic force microscopy and roughness measurements were made prior to and post irradiation. A change in roughness of the silver films on Ge30Se70 was observed following exposure. This indicated the loss of continuity of the film which causes the increase in silver film resistance following irradiation. Recovery of initial resistance in the structures was also observed after the radiation stress was removed. This recovery was explained with photo-stimulated deposition of silver from the chalcogenide at room temperature confirmed with the re-appearance of silver dendrites on the chalcogenide surface. The results demonstrate that it is possible to use the metal dissolution effect in radiation sensing applications.
ContributorsChandran, Ankitha (Author) / Kozicki, Michael N (Thesis advisor) / Holbert, Keith E. (Committee member) / Barnaby, Hugh (Committee member) / Arizona State University (Publisher)
Created2012
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Description
A distributed-parameter model is developed for a pressurized water reactor (PWR) in order to analyze the frequency behavior of the nuclear reactor. The model is built based upon the partial differential equations describing heat transfer and fluid flow in the reactor core. As a comparison, a multi-lump reactor core model

A distributed-parameter model is developed for a pressurized water reactor (PWR) in order to analyze the frequency behavior of the nuclear reactor. The model is built based upon the partial differential equations describing heat transfer and fluid flow in the reactor core. As a comparison, a multi-lump reactor core model with five fuel lumps and ten coolant lumps using Mann's model is employed. The derivations of the different transfer functions in both models are also presented with emphasis on the distributed parameter. In order to contrast the two models, Bode plots of the transfer functions are generated using data from the Palo Verde Nuclear Generating Station. Further, a detailed contradistinction between these two models is presented. From the comparison, the features of both models are presented. The distributed parameter model has the ability to offer an accurate transfer function at any location throughout the reactor core. In contrast, the multi-lump parameter model can only provide the average value in a given region (lump). Also, in the distributed parameter model only the feedback according to the specific location under study is incorporated into the transfer function; whereas the transfer functions derived from the multi-lump model contain the average feedback effects happening all over the reactor core.
ContributorsZhang, Taipeng (Author) / Holbert, Keith E. (Thesis advisor) / Vittal, Vijay (Committee member) / Tylavsky, Daniel (Committee member) / Arizona State University (Publisher)
Created2012
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Description
This dissertation presents a new hybrid fault current limiter (FCL) topology that is primarily intended to protect single-phase power equipment. It can however be extended to protect three phase systems but would need three devices to protect each individual phase. In comparison against the existing fault current limiter technology, the

This dissertation presents a new hybrid fault current limiter (FCL) topology that is primarily intended to protect single-phase power equipment. It can however be extended to protect three phase systems but would need three devices to protect each individual phase. In comparison against the existing fault current limiter technology, the salient fea-tures of the proposed topology are: a) provides variable impedance that provides a 50% reduction in prospective fault current; b) near instantaneous response time which is with-in the first half cycle (1-4 ms); c) the use of semiconductor switches as the commutating switch which produces reduced leakage current, reduced losses, improved reliability, and a faster switch time (ns-µs); d) zero losses in steady-state operation; e) use of a Neodym-ium (NdFeB) permanent magnet as the limiting impedance which reduces size, cost, weight, eliminates DC biasing and cooling costs; f) use of Pulse Width Modulation (PWM) to control the magnitude of the fault current to a user's desired level. g) experi-mental test system is developed and tested to prove the concepts of the proposed FCL. This dissertation presents the proposed topology and its working principle backed up with numerical verifications, simulation results, and hardware implementation results. Conclu-sions and future work are also presented.
ContributorsPrigmore, Jay (Author) / Karady, George G. (Thesis advisor) / Ayyanar, Raja (Committee member) / Holbert, Keith E. (Committee member) / Hedman, Kory (Committee member) / Arizona State University (Publisher)
Created2013
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Description
A pressurized water reactor (PWR) nuclear power plant (NPP) model is introduced into Positive Sequence Load Flow (PSLF) software by General Electric in order to evaluate the load-following capability of NPPs. The nuclear steam supply system (NSSS) consists of a reactor core, hot and cold legs, plenums, and a U-tube

A pressurized water reactor (PWR) nuclear power plant (NPP) model is introduced into Positive Sequence Load Flow (PSLF) software by General Electric in order to evaluate the load-following capability of NPPs. The nuclear steam supply system (NSSS) consists of a reactor core, hot and cold legs, plenums, and a U-tube steam generator. The physical systems listed above are represented by mathematical models utilizing a state variable lumped parameter approach. A steady-state control program for the reactor, and simple turbine and governor models are also developed. Adequacy of the isolated reactor core, the isolated steam generator, and the complete PWR models are tested in Matlab/Simulink and dynamic responses are compared with the test results obtained from the H. B. Robinson NPP. Test results illustrate that the developed models represents the dynamic features of real-physical systems and are capable of predicting responses due to small perturbations of external reactivity and steam valve opening. Subsequently, the NSSS representation is incorporated into PSLF and coupled with built-in excitation system and generator models. Different simulation cases are run when sudden loss of generation occurs in a small power system which includes hydroelectric and natural gas power plants besides the developed PWR NPP. The conclusion is that the NPP can respond to a disturbance in the power system without exceeding any design and safety limits if appropriate operational conditions, such as achieving the NPP turbine control by adjusting the speed of the steam valve, are met. In other words, the NPP can participate in the control of system frequency and improve the overall power system performance.
ContributorsArda, Samet Egemen (Author) / Holbert, Keith E. (Thesis advisor) / Undrill, John (Committee member) / Tylavsky, Daniel (Committee member) / Arizona State University (Publisher)
Created2013
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Description
Photodetectors in the 1.7 to 4.0 μm range are being commercially developed on InP substrates to meet the needs of longer wavelength applications such as thermal and medical sensing. Currently, these devices utilize high indium content metamorphic Ga1-xInxAs (x > 0.53) layers to extend the wavelength range beyond the 1.7

Photodetectors in the 1.7 to 4.0 μm range are being commercially developed on InP substrates to meet the needs of longer wavelength applications such as thermal and medical sensing. Currently, these devices utilize high indium content metamorphic Ga1-xInxAs (x > 0.53) layers to extend the wavelength range beyond the 1.7 μm achievable using lattice matched GaInAs. The large lattice mismatch required to reach the extended wavelengths results in photodetector materials that contain a large number of misfit dislocations. The low quality of these materials results in a large nonradiative Shockley Read Hall generation/recombination rate that is manifested as an undesirable large thermal noise level in these photodetectors. This work focuses on utilizing the different band structure engineering methods to design more efficient devices on InP substrates. One prospective way to improve photodetector performance at the extended wavelengths is to utilize lattice matched GaInAs/GaAsSb structures that have a type-II band alignment, where the ground state transition energy of the superlattice is smaller than the bandgap of either constituent material. Over the extended wavelength range of 2 to 3 μm this superlattice structure has an optimal period thickness of 3.4 to 5.2 nm and a wavefunction overlap of 0.8 to 0.4, respectively. In using a type-II superlattice to extend the cutoff wavelength there is a tradeoff between the wavelength reached and the electron-hole wavefunction overlap realized, and hence absorption coefficient achieved. This tradeoff and the subsequent reduction in performance can be overcome by two methods: adding bismuth to this type-II material system; applying strain on both layers in the system to attain strain-balanced condition. These allow the valance band alignment and hence the wavefunction overlap to be tuned independently of the wavelength cutoff. Adding 3% bismuth to the GaInAs constituent material, the resulting lattice matched Ga0.516In0.484As0.970Bi0.030/GaAs0.511Sb0.489superlattice realizes a 50% larger absorption coefficient. While as, similar results can be achieved with strain-balanced condition with strain limited to 1.9% on either layer. The optimal design rules derived from the different possibilities make it feasible to extract superlattice period thickness with the best absorption coefficient for any cutoff wavelength in the range.  
ContributorsSharma, Ankur R (Author) / Johnson, Shane (Thesis advisor) / Goryll, Michael (Committee member) / Roedel, Ronald (Committee member) / Arizona State University (Publisher)
Created2013