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- All Subjects: Electrical Engineering
- All Subjects: physical unclonable function
- Creators: Barnaby, Hugh
Description
With the natural resources of earth depleting very fast, the natural resources of other celestial bodies are considered a potential replacement. Thus, there has been rise of space missions constantly and with it the need of more sophisticated spectrometer devices has increased. The most important requirement in such an application is low area and power consumption.
To save area, some scintillators have been developed that can resolve both neutrons and gamma events rather than traditional scintillators which can do only one of these and thus, the spacecraft needs two such devices. But with this development, the requirements out of the readout electronics has also increased which now need to discriminate between neutron and gamma events.
This work presents a novel architecture for discriminating such events and compares the results with another approach developed by a partner company. The results show excellent potential in this approach for the neutron-gamma discrimination and the team at ASU is going to expand on this design and build up a working prototype for the complete spectrometer device.
To save area, some scintillators have been developed that can resolve both neutrons and gamma events rather than traditional scintillators which can do only one of these and thus, the spacecraft needs two such devices. But with this development, the requirements out of the readout electronics has also increased which now need to discriminate between neutron and gamma events.
This work presents a novel architecture for discriminating such events and compares the results with another approach developed by a partner company. The results show excellent potential in this approach for the neutron-gamma discrimination and the team at ASU is going to expand on this design and build up a working prototype for the complete spectrometer device.
ContributorsGupta, Kush (Author) / Barnaby, Hugh (Thesis advisor) / Hardgrove, Craig (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2017
Description
The aging mechanism in devices is prone to uncertainties due to dynamic stress conditions. In AMS circuits these can lead to momentary fluctuations in circuit voltage that may be missed by a compact model and hence cause unpredictable failure. Firstly, multiple aging effects in the devices may have underlying correlations. The generation of new traps during TDDB may significantly accelerate BTI, since these traps are close to the dielectric-Si interface in scaled technology. Secondly, the prevalent reliability analysis lacks a direct validation of the lifetime of devices and circuits. The aging mechanism of BTI causes gradual degradation of the device leading to threshold voltage shift and increasing the failure rate. In the 28nm HKMG technology, contribution of BTI to NMOS degradation has become significant at high temperature as compared to Channel Hot Carrier (CHC). This requires revising the End of Lifetime (EOL) calculation based on contribution from induvial aging effects especially in feedback loops. Conventionally, aging in devices is extrapolated from a short-term measurement, but this practice results in unreliable prediction of EOL caused by variability in initial parameters and stress conditions. To mitigate the extrapolation issues and improve predictability, this work aims at providing a new approach to test the device to EOL in a fast and controllable manner. The contributions of this thesis include: (1) based on stochastic trapping/de-trapping mechanism, new compact BTI models are developed and verified with 14nm FinFET and 28nm HKMG data. Moreover, these models are implemented into circuit simulation, illustrating a significant increase in failure rate due to accelerated BTI, (2) developing a model to predict accelerated aging under special conditions like feedback loops and stacked inverters, (3) introducing a feedback loop based test methodology called Adaptive Accelerated Aging (AAA) that can generate accurate aging data till EOL, (4) presenting simulation and experimental data for the models and providing test setup for multiple stress conditions, including those for achieving EOL in 1 hour device as well as ring oscillator (RO) circuit for validation of the proposed methodology, and (5) scaling these models for finding a guard band for VLSI design circuits that can provide realistic aging impact.
ContributorsPatra, Devyani (Author) / Cao, Yu (Thesis advisor) / Barnaby, Hugh (Thesis advisor) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2017
Description
The scaling of transistors has numerous advantages such as increased memory density, less power consumption and better performance; but on the other hand, they also give rise to many reliability issues. One of the major reliability issue is the hot carrier injection and the effect it has on device degradation over time which causes serious circuit malfunctions.
Hot carrier injection has been studied from early 1980's and a lot of research has been done on the various hot carrier injection mechanisms and how the devices get damaged due to this effect. However, most of the existing hot carrier degradation models do not consider the physics involved in the degradation process and they just calculate the change in threshold voltage for different stress voltages and time. Based on this, an analytical expression is formulated that predicts the device lifetime.
This thesis starts by discussing various hot carrier injection mechanisms and the effects it has on the device. Studies have shown charges getting trapped in gate oxide and interface trap generation are two mechanisms for device degradation. How various device parameters get affected due to these traps is discussed here. The physics based models such as lucky hot electron model and substrate current model are presented and gives an idea how the gate current and substrate current can be related to hot carrier injection and density of traps created.
Devices are stressed under various voltages and from the experimental data obtained, the density of trapped charges and interface traps are calculated using mid-gap technique. In this thesis, a simple analytical model based on substrate current is used to calculate the density of trapped charges in oxide and interface traps generated and it is a function of stress voltage and stress time. The model is verified against the data and the TCAD simulations. Finally, the analytical model is incorporated in a Verilog-A model and based on the surface potential method, the threshold voltage shift due to hot carrier stress is calculated.
Hot carrier injection has been studied from early 1980's and a lot of research has been done on the various hot carrier injection mechanisms and how the devices get damaged due to this effect. However, most of the existing hot carrier degradation models do not consider the physics involved in the degradation process and they just calculate the change in threshold voltage for different stress voltages and time. Based on this, an analytical expression is formulated that predicts the device lifetime.
This thesis starts by discussing various hot carrier injection mechanisms and the effects it has on the device. Studies have shown charges getting trapped in gate oxide and interface trap generation are two mechanisms for device degradation. How various device parameters get affected due to these traps is discussed here. The physics based models such as lucky hot electron model and substrate current model are presented and gives an idea how the gate current and substrate current can be related to hot carrier injection and density of traps created.
Devices are stressed under various voltages and from the experimental data obtained, the density of trapped charges and interface traps are calculated using mid-gap technique. In this thesis, a simple analytical model based on substrate current is used to calculate the density of trapped charges in oxide and interface traps generated and it is a function of stress voltage and stress time. The model is verified against the data and the TCAD simulations. Finally, the analytical model is incorporated in a Verilog-A model and based on the surface potential method, the threshold voltage shift due to hot carrier stress is calculated.
ContributorsMuthuseenu, Kiraneswar (Author) / Barnaby, Hugh (Thesis advisor) / Kozicki, Michael (Committee member) / Velo, Yago Gonzalez (Committee member) / Arizona State University (Publisher)
Created2017
Description
Counterfeiting of goods is a widespread epidemic that is affecting the world economy. The conventional labeling techniques are proving inadequate to thwart determined counterfeiters equipped with sophisticated technologies. There is a growing need of a secure labeling that is easy to manufacture and analyze but extremely difficult to copy. Programmable metallization cell technology operates on a principle of controllable reduction of a metal ions to an electrodeposit in a solid electrolyte by application of bias. The nature of metallic electrodeposit is unique for each instance of growth, moreover it has a treelike, bifurcating fractal structure with high information capacity. These qualities of the electrodeposit can be exploited to use it as a physical unclonable function. The secure labels made from the electrodeposits grown in radial structure can provide enhanced authentication and protection from counterfeiting and tampering.
So far only microscale radial structures and electrodeposits have been fabricated which limits their use to labeling only high value items due to high cost associated with their fabrication and analysis. Therefore, there is a need for a simple recipe for fabrication of macroscale structure that does not need sophisticated lithography tools and cleanroom environment. Moreover, the growth kinetics and material characteristics of such macroscale electrodeposits need to be investigated. In this thesis, a recipe for fabrication of centimeter scale radial structure for growing Ag electrodeposits using simple fabrication techniques was proposed. Fractal analysis of an electrodeposit suggested information capacity of 1.27 x 1019. The kinetics of growth were investigated by electrical characterization of the full cell and only solid electrolyte at different temperatures. It was found that mass transport of ions is the rate limiting process in the growth. Materials and optical characterization techniques revealed that the subtle relief like structure and consequently distinct optical response of the electrodeposit provides an added layer of security. Thus, the enormous information capacity, ease of fabrication and simplicity of analysis make macroscale fractal electrodeposits grown in radial programmable metallization cells excellent candidates for application as physical unclonable functions.
So far only microscale radial structures and electrodeposits have been fabricated which limits their use to labeling only high value items due to high cost associated with their fabrication and analysis. Therefore, there is a need for a simple recipe for fabrication of macroscale structure that does not need sophisticated lithography tools and cleanroom environment. Moreover, the growth kinetics and material characteristics of such macroscale electrodeposits need to be investigated. In this thesis, a recipe for fabrication of centimeter scale radial structure for growing Ag electrodeposits using simple fabrication techniques was proposed. Fractal analysis of an electrodeposit suggested information capacity of 1.27 x 1019. The kinetics of growth were investigated by electrical characterization of the full cell and only solid electrolyte at different temperatures. It was found that mass transport of ions is the rate limiting process in the growth. Materials and optical characterization techniques revealed that the subtle relief like structure and consequently distinct optical response of the electrodeposit provides an added layer of security. Thus, the enormous information capacity, ease of fabrication and simplicity of analysis make macroscale fractal electrodeposits grown in radial programmable metallization cells excellent candidates for application as physical unclonable functions.
ContributorsChamele, Ninad (Author) / Kozicki, Michael (Thesis advisor) / Barnaby, Hugh (Thesis advisor) / Newman, Nathan (Committee member) / Arizona State University (Publisher)
Created2017
Description
Most hardware today is based on von Neumann architecture separating memory from logic. Valuable processing time is lost in shuttling information back and forth between the two units, a problem called von Neumann bottleneck. As transistors are scaled further down, this bottleneck will make it harder to deliver performance in computing power. Adding to this is the increasing complexity of artificial intelligence logic. Thus, there is a need for a faster and more efficient method of computing. Neuromorphic systems deliver this by emulating the massively parallel and fault-tolerant computing capabilities of the human brain where the action potential is triggered by multiple inputs at once (spatial) or an input that builds up over time (temporal). Highly scalable memristors are key in these systems- they can maintain their internal resistive state based on previous current/voltage values thus mimicking the way the strength of two synapses in the brain can vary. The brain-inspired algorithms are implemented by vector matrix multiplications (VMMs) to provide neuronal outputs. High-density conductive bridging random access memory (CBRAM) crossbar arrays (CBAs) can perform VMMs parallelly with ultra-low energy.This research explores a simple planarization technique that could be potentially extended to integrate front-end-of-line (FEOL) processing of complementary metal oxide semiconductor (CMOS) circuitry with back-end-of-line (BEOL) processing of CBRAM CBAs for one-transistor one-resistor (1T1R) Neuromorphic CMOS chips where the transistor is part of the CMOS circuitry and the CBRAM forms the resistor. It is a photoresist (PR) and spin-on glass (SOG) based planarization recipe to planarize CBRAM electrode patterns on a silicon substrate. In this research, however, the planarization is only applied to mechanical grade (MG) silicon wafers without any CMOS layers on them. The planarization achieved was of a very high order (few tens of nanometers). Additionally, the recipe is cost-effective, provides good quality films and simple as only two types of process technologies are involved- lithography and dry etching.
Subsequent processing would involve depositing the CBRAM layers onto the planarized electrodes to form the resistor. Finally, the entire process flow is to be replicated onto wafers with CMOS layers to form the 1T1R circuit.
ContributorsBiswas, Prabaha (Author) / Barnaby, Hugh (Thesis advisor) / Kozicki, Michael (Committee member) / Velo, Yago Gonzalez (Committee member) / Arizona State University (Publisher)
Created2021
Description
In recent years, the Silicon Super-Junction (SJ) power metal-oxide semiconductor field-effect transistor (MOSFET), has garnered significant interest from spacecraft designers. This is due to their high breakdown voltage and low specific on-state resistance characteristics. Most of the previous research work on power MOSFETS for space applications concentrated on improving the radiation tolerance of low to medium voltage (~ 300V) power MOSFETs. Therefore, understanding and improving the reliability of high voltage SJMOS for the harsh space radiation environment is an important endeavor.In this work, a 600V commercially available silicon planar gate SJMOS is used to study the SJ technology’s tolerance against total ionizing dose (TID) and destructive single event effects (SEE), such as, single event burnout (SEB) and single event gate rupture (SEGR). A technology computer aided design (TCAD) software tool is used to design the SJMOS and simulate its electrical characteristics.
Electrical characterization of SJMOS devices showed substantial decrease in threshold voltage and increase in leakage current due to TID. Therefore, as a solution to improve the TID tolerance, metal-nitride-oxide-semiconductor (MNOS) capacitors with different oxide
itride thickness combinations were fabricated and irradiated using a Co-60 gamma-source. Electrical characterization showed all samples with oxide
itride stack gate insulators exhibited significantly higher tolerance to irradiation when compared to metal-oxide-semiconductor capacitors.
Heavy ion testing of the SJMOS showed the device failed due to SEB and SEGR at 10% of maximum rated bias values. In this work, a 600V SJMOS structure is designed that is tolerant to both SEB and SEGR. In a SJMOS with planar gate, reducing the neck width improves the tolerance to SEGR but significantly changes the device electrical characteristics. The trench gate SJ device design is shown to overcome this problem. A buffer layer and larger P+-plug are added to the trench gate SJ power transistor to improve SEB tolerance. Using TCAD simulations, the proposed trench gate structure and the tested planar gate SJMOS are compared. The simulation results showed that the SEB and SEGR hardness in the proposed structure has improved by a factor of 10 and passes at the device’s maximum rated bias value with improved electrical performance.
Electrical characterization of SJMOS devices showed substantial decrease in threshold voltage and increase in leakage current due to TID. Therefore, as a solution to improve the TID tolerance, metal-nitride-oxide-semiconductor (MNOS) capacitors with different oxide
itride thickness combinations were fabricated and irradiated using a Co-60 gamma-source. Electrical characterization showed all samples with oxide
itride stack gate insulators exhibited significantly higher tolerance to irradiation when compared to metal-oxide-semiconductor capacitors.
Heavy ion testing of the SJMOS showed the device failed due to SEB and SEGR at 10% of maximum rated bias values. In this work, a 600V SJMOS structure is designed that is tolerant to both SEB and SEGR. In a SJMOS with planar gate, reducing the neck width improves the tolerance to SEGR but significantly changes the device electrical characteristics. The trench gate SJ device design is shown to overcome this problem. A buffer layer and larger P+-plug are added to the trench gate SJ power transistor to improve SEB tolerance. Using TCAD simulations, the proposed trench gate structure and the tested planar gate SJMOS are compared. The simulation results showed that the SEB and SEGR hardness in the proposed structure has improved by a factor of 10 and passes at the device’s maximum rated bias value with improved electrical performance.
ContributorsMuthuseenu, Kiraneswar (Author) / Barnaby, Hugh (Thesis advisor) / Kozicki, Michael (Committee member) / Holbert, Keith E. (Committee member) / Gonzalez Velo, Yago (Committee member) / Arizona State University (Publisher)
Created2020
Description
Lateral programmable metallization cells (PMC) utilize the properties of electrodeposits grown over a solid electrolyte channel. Such devices have an active anode and an inert cathode separated by a long electrodeposit channel in a coplanar arrangement. The ability to transport large amount of metallic mass across the channel makes these devices attractive for various More-Than-Moore applications. Existing literature lacks a comprehensive study of electrodeposit growth kinetics in lateral PMCs. Moreover, the morphology of electrodeposit growth in larger, planar devices is also not understood. Despite the variety of applications, lateral PMCs are not embraced by the semiconductor industry due to incompatible materials and high operating voltages needed for such devices. In this work, a numerical model based on the basic processes in PMCs – cation drift and redox reactions – is proposed, and the effect of various materials parameters on the electrodeposit growth kinetics is reported. The morphology of the electrodeposit growth and kinetics of the electrodeposition process are also studied in devices based on Ag-Ge30Se70 materials system. It was observed that the electrodeposition process mainly consists of two regimes of growth – cation drift limited regime and mixed regime. The electrodeposition starts in cation drift limited regime at low electric fields and transitions into mixed regime as the field increases. The onset of mixed regime can be controlled by applied voltage which also affects the morphology of electrodeposit growth. The numerical model was then used to successfully predict the device kinetics and onset of mixed regime. The problem of materials incompatibility with semiconductor manufacturing was solved by proposing a novel device structure. A bilayer structure using semiconductor foundry friendly materials was suggested as a candidate for solid electrolyte. The bilayer structure consists of a low resistivity oxide shunt layer on top of a high resistivity ion carrying oxide layer. Devices using Cu2O as the low resistivity shunt on top of Cu doped WO3 oxide were fabricated. The bilayer devices provided orders of magnitude improvement in device performance in the context of operating voltage and switching time. Electrical and materials characterization revealed the structure of bilayers and the mechanism of electrodeposition in these devices.
ContributorsChamele, Ninad (Author) / Kozicki, Michael (Thesis advisor) / Barnaby, Hugh (Committee member) / Newman, Nathan (Committee member) / Gonzalez-Velo, Yago (Committee member) / Arizona State University (Publisher)
Created2020