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Description
Semiconductor nanowires have the potential to emerge as the building blocks of next generation field-effect transistors, logic gates, solar cells and light emitting diodes. Use of Gallium Nitride (GaN) and other wide bandgap materials combines the advantages of III-nitrides along with the enhanced mobility offered by 2-dimensional confinement present in nanowires. The focus of this thesis is on developing a low field mobility model for a GaN nanowire using Ensemble Monte Carlo (EMC) techniques. A 2D Schrödinger-Poisson solver and a one-dimensional Monte Carlo solver is developed for an Aluminum Gallium Nitride/Gallium Nitride Heterostructure nanowire. A GaN/AlN/AlGaN heterostructure device is designed which creates 2-dimensional potential well for electrons. The nanowire is treated as a quasi-1D system in this work. A self-consistent 2D Schrödinger-Poisson solver is designed which determines the subband energies and the corresponding wavefunctions of the confined system. Three scattering mechanisms: acoustic phonon scattering, polar optical phonon scattering and piezoelectric scattering are considered to account for the electron phonon interactions in the system. Overlap integrals and 1D scattering rate expressions are derived for all the mechanisms listed. A generic one-dimensional Monte Carlo solver is also developed. Steady state results from the 1D Monte Carlo solver are extracted to determine the low field mobility of the GaN nanowires.
ContributorsKumar, Viswanathan Naveen (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen (Committee member) / Zhao, Yuji (Committee member) / Arizona State University (Publisher)
Created2017
Description
Gallium Nitride (GaN) based Current Aperture Vertical Electron Transistors (CAVETs) present many appealing qualities for applications in high power, high frequency devices. The wide bandgap, high carrier velocity of GaN make it ideal for withstanding high electric fields and supporting large currents. The vertical topology of the CAVET allows for more efficient die area utilization, breakdown scaling with the height of the device, and burying high electric fields in the bulk where they will not charge interface states that can lead to current collapse at higher frequency.
Though GaN CAVETs are promising new devices, they are expensive to develop due to new or exotic materials and processing steps. As a result, the accurate simulation of GaN CAVETs has become critical to the development of new devices. Using Silvaco Atlas 5.24.1.R, best practices were developed for GaN CAVET simulation by recreating the structure and results of the pGaN insulated gate CAVET presented in chapter 3 of [8].
From the results it was concluded that the best simulation setup for transfer characteristics, output characteristics, and breakdown included the following. For methods, the use of Gummel, Block, Newton, and Trap. For models, SRH, Fermi, Auger, and impact selb. For mobility, the use of GANSAT and manually specified saturation velocity and mobility (based on doping concentration). Additionally, parametric sweeps showed that, of those tested, critical CAVET parameters included channel mobility (and thus doping), channel thickness, Current Blocking Layer (CBL) doping, gate overlap, and aperture width in rectangular devices or diameter in cylindrical devices.
Though GaN CAVETs are promising new devices, they are expensive to develop due to new or exotic materials and processing steps. As a result, the accurate simulation of GaN CAVETs has become critical to the development of new devices. Using Silvaco Atlas 5.24.1.R, best practices were developed for GaN CAVET simulation by recreating the structure and results of the pGaN insulated gate CAVET presented in chapter 3 of [8].
From the results it was concluded that the best simulation setup for transfer characteristics, output characteristics, and breakdown included the following. For methods, the use of Gummel, Block, Newton, and Trap. For models, SRH, Fermi, Auger, and impact selb. For mobility, the use of GANSAT and manually specified saturation velocity and mobility (based on doping concentration). Additionally, parametric sweeps showed that, of those tested, critical CAVET parameters included channel mobility (and thus doping), channel thickness, Current Blocking Layer (CBL) doping, gate overlap, and aperture width in rectangular devices or diameter in cylindrical devices.
ContributorsWarren, Andrew (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen (Committee member) / Zhao, Yuji (Committee member) / Arizona State University (Publisher)
Created2019
Description
Wide bandgap (WBG) semiconductors GaN (3.4 eV), Ga2O3 (4.8 eV) and AlN (6.2 eV), have gained considerable interests for energy-efficient optoelectronic and electronic applications in solid-state lighting, photovoltaics, power conversion, and so on. They can offer unique device performance compared with traditional semiconductors such as Si. Efficient GaN based light-emitting diodes (LEDs) have increasingly displaced incandescent and fluorescent bulbs as the new major light sources for lighting and display. In addition, due to their large bandgap and high critical electrical field, WBG semiconductors are also ideal candidates for efficient power conversion.
In this dissertation, two types of devices are demonstrated: optoelectronic and electronic devices. Commercial polar c-plane LEDs suffer from reduced efficiency with increasing current densities, knowns as “efficiency droop”, while nonpolar/semipolar LEDs exhibit a very low efficiency droop. A modified ABC model with weak phase space filling effects is proposed to explain the low droop performance, providing insights for designing droop-free LEDs. The other emerging optoelectronics is nonpolar/semipolar III-nitride intersubband transition (ISBT) based photodetectors in terahertz and far infrared regime due to the large optical phonon energy and band offset, and the potential of room-temperature operation. ISBT properties are systematically studied for devices with different structures parameters.
In terms of electronic devices, vertical GaN p-n diodes and Schottky barrier diodes (SBDs) with high breakdown voltages are homoepitaxially grown on GaN bulk substrates with much reduced defect densities and improved device performance. The advantages of the vertical structure over the lateral structure are multifold: smaller chip area, larger current, less sensitivity to surface states, better scalability, and smaller current dispersion. Three methods are proposed to boost the device performances: thick buffer layer design, hydrogen-plasma based edge termination technique, and multiple drift layer design. In addition, newly emerged Ga2O3 and AlN power electronics may outperform GaN devices. Because of the highly anisotropic crystal structure of Ga2O3, anisotropic electrical properties have been observed in Ga2O3 electronics. The first 1-kV-class AlN SBDs are demonstrated on cost-effective sapphire substrates. Several future topics are also proposed including selective-area doping in GaN power devices, vertical AlN power devices, and (Al,Ga,In)2O3 materials and devices.
In this dissertation, two types of devices are demonstrated: optoelectronic and electronic devices. Commercial polar c-plane LEDs suffer from reduced efficiency with increasing current densities, knowns as “efficiency droop”, while nonpolar/semipolar LEDs exhibit a very low efficiency droop. A modified ABC model with weak phase space filling effects is proposed to explain the low droop performance, providing insights for designing droop-free LEDs. The other emerging optoelectronics is nonpolar/semipolar III-nitride intersubband transition (ISBT) based photodetectors in terahertz and far infrared regime due to the large optical phonon energy and band offset, and the potential of room-temperature operation. ISBT properties are systematically studied for devices with different structures parameters.
In terms of electronic devices, vertical GaN p-n diodes and Schottky barrier diodes (SBDs) with high breakdown voltages are homoepitaxially grown on GaN bulk substrates with much reduced defect densities and improved device performance. The advantages of the vertical structure over the lateral structure are multifold: smaller chip area, larger current, less sensitivity to surface states, better scalability, and smaller current dispersion. Three methods are proposed to boost the device performances: thick buffer layer design, hydrogen-plasma based edge termination technique, and multiple drift layer design. In addition, newly emerged Ga2O3 and AlN power electronics may outperform GaN devices. Because of the highly anisotropic crystal structure of Ga2O3, anisotropic electrical properties have been observed in Ga2O3 electronics. The first 1-kV-class AlN SBDs are demonstrated on cost-effective sapphire substrates. Several future topics are also proposed including selective-area doping in GaN power devices, vertical AlN power devices, and (Al,Ga,In)2O3 materials and devices.
ContributorsFu, Houqiang (Author) / Zhao, Yuji (Thesis advisor) / Vasileska, Dragica (Committee member) / Goodnick, Stephen (Committee member) / Yu, Hongbin (Committee member) / Wang, Liping (Committee member) / Arizona State University (Publisher)
Created2019
Description
Buck converters are a class of switched-mode power converters often used to step down DC input voltages to a lower DC output voltage. These converters naturally produce a current and voltage ripple at their output due to their switching action. Traditional methods of reducing this ripple have involved adding large discrete inductors and capacitors to filter the ripple, but large discrete components cannot be integrated onto chips. As an alternative to using passive filtering components, this project investigates the use of active ripple cancellation to reduce the peak output ripple. Hysteretic controlled buck converters were chosen for their simplicity of design and fast transient response. The proposed cancellation circuits sense the output ripple of the buck converter and inject an equal ripple exactly out of phase with the sensed ripple. Both current-mode and voltage-mode feedback loops are simulated, and the effectiveness of each cancellation circuit is examined. Results show that integrated active ripple cancellation circuits offer a promising substitute for large discrete filters.
ContributorsWang, Ziyan (Author) / Bakkaloglu, Bertan (Thesis director) / Kitchen, Jennifer (Committee member) / Electrical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2017-12
Description
The world of a hearing impaired person is much different than that of somebody capable of discerning different frequencies and magnitudes of sound waves via their ears. This is especially true when hearing impaired people play video games. In most video games, surround sound is fed through some sort of digital output to headphones or speakers. Based on this information, the gamer can discern where a particular stimulus is coming from and whether or not that is a threat to their wellbeing within the virtual world. People with reliable hearing have a distinct advantage over hearing impaired people in the fact that they can gather information not just from what is in front of them, but from every angle relative to the way they're facing. The purpose of this project was to find a way to even the playing field, so that a person hard of hearing could also receive the sensory feedback that any other person would get while playing video games To do this, visual surround sound was created. This is a system that takes a surround sound input, and illuminates LEDs around the periphery of glasses based on the direction, frequency and amplitude of the audio wave. This provides the user with crucial information on the whereabouts of different elements within the game. In this paper, the research and development of Visual Surround Sound is discussed along with its viability in regards to a deaf person's ability to learn the technology, and decipher the visual cues.
ContributorsKadi, Danyal (Co-author) / Burrell, Nathaneal (Co-author) / Butler, Kristi (Co-author) / Wright, Gavin (Co-author) / Kosut, Oliver (Thesis director) / Bliss, Daniel (Committee member) / Barrett, The Honors College (Contributor) / Electrical Engineering Program (Contributor)
Created2015-05
Description
Current technology does not allow for the full amount of power produced by solar arrays (PV) on spacecraft to be utilized. The arrays are designed with non-reconfigurable architectures and sent on fifteen to twenty year long missions. They cannot be changed once they are in space, so the arrays are designed for the end of life. Throughout their lifetime, solar arrays can degrade in power producing capabilities anywhere from 20% to 50%. Because there is such a drastic difference in the beginning and end of life power production, and because they cannot be reconfigured, a new design has been found necessary in order to increase power production. Reconfiguration allows the solar arrays to achieve maximum power producing capabilities at both the beginning and end of their lives. With the potential to increase power production by 50%, the reconfiguration design consists of a switching network to be able to utilize any combination of cells. The design for reconfiguration must meet the power requirements of the solar array. This thesis will explore different designs for reconfiguration, as well as possible switches for implementation. It will also review other methods to increase power production, as well as discuss future work in this field.
ContributorsJohnson, Everett Hope (Author) / Kitchen, Jennifer (Thesis director) / Ozev, Sule (Committee member) / School of International Letters and Cultures (Contributor) / Electrical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2018-05
Description
A novel strain sensing procedure using an optical scanning methodology and diffraction grating is explored. The motivation behind this study is due to uneven thermal strain distribution across semiconductor chips that are composed of varying materials. Due to the unique properties of the materials and the different coefficients of thermal expansion (CTE), one can expect the material that experiences the highest strain to be the most likely failure point of the chip. As such, there is a need for a strain sensing technique that offers a very high strain sensitivity, a high spatial resolution while simultaneously achieving a large field of view. This study goes through the optical setup as well as the evolution of the optical grating in an effort to improve the strain sensitivity of this setup.
ContributorsChen, George (Co-author) / Ma, Teng (Co-author) / Liang, Hanshuang (Co-author) / Song, Zeming (Co-author) / Nguyen, Hoa (Co-author) / Yu, Hongbin (Thesis director) / Jiang, Hanqing (Committee member) / Barrett, The Honors College (Contributor) / Electrical Engineering Program (Contributor)
Created2014-05
Description
Electroencephalogram (EEG) used simultaneously with video monitoring can record detailed patient physiology during a seizure to aid diagnosis. However, current patient monitoring systems typically require a patient to stay in view of a fixed camera limiting their freedom of movement. The goal of this project is to design an automatic patient monitoring system with software to track patient movement in order to increase a patient's mobility. This report discusses the impact of an automatic patient monitoring system and the design steps used to create and test a functional prototype.
ContributorsBui, Robert Truong (Author) / Frakes, David (Thesis director) / Helms Tillery, Stephen (Committee member) / Barrett, The Honors College (Contributor) / Electrical Engineering Program (Contributor)
Created2014-05
Description
This project examines the science of electric field sensing and completes experiments, gathering data to support its utility for various applications. The basic system consists of a transmitter, receiver, and lock-in amplifier. The primary goal of the study was to determine if such a system could detect a human disturbance, due to the capacitance of a human body, and such a thesis was supported. Much different results were obtained when a person disturbed the electric field transmitted by the system than when other types of objects, such as chairs and electronic devices, were placed in the field. In fact, there was a distinct difference between persons of varied sizes as well. This thesis goes through the basic design of the system and the process of experimental design for determining the capabilities of such an electric field sensing system.
ContributorsBranham, Breana Michelle (Author) / Allee, David (Thesis director) / Papandreou-Suppappola, Antonia (Committee member) / Phillips, Stephen (Committee member) / Barrett, The Honors College (Contributor) / Electrical Engineering Program (Contributor) / School of International Letters and Cultures (Contributor)
Created2013-05
Description
A hybrid PV/T module was built, consisting of a thermal liquid heating system and a photovoltaic module system that combine in a hybrid format. This report will discuss the work on the project from Fall 2012 to Spring 2013. Three stages of experiments were completed. Stage 1 showed our project was functional as we were able to verify our panel produced electricity and increased the temperature of water flowing in the system by 0.65°C. Stage 2 testing included “gluing” the flow system to the back of the panel resulting in an average increase of 4.76°C in the temperature of the water in the system. Stage 3 testing included adding insulating foam to the module which resulted in increasing the average temperature of the water in our flow system by 6.95°C.
ContributorsDenke, Steven Michael (Author) / Roedel, Ron (Thesis director) / Aberle, James (Committee member) / Rauch, Dawson (Committee member) / Barrett, The Honors College (Contributor) / Electrical Engineering Program (Contributor)
Created2013-05