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Description
This thesis work mainly examined the stability and reliability issues of amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistors under bias-illumination stress. Amorphous hydrogenated silicon has been the dominating material used in thin film transistors as a channel layer. However with the advent of modern high performance display technologies, it is required to have devices with better current carrying capability and better reproducibility. This brings the idea of new material for channel layer of these devices. Researchers have tried poly silicon materials, organic materials and amorphous mixed oxide materials as a replacement to conventional amorphous silicon layer. Due to its low price and easy manufacturing process, amorphous mixed oxide thin film transistors have become a viable option to replace the conventional ones in order to achieve high performance display circuits. But with new materials emerging, comes the challenge of reliability and stability issues associated with it. Performance measurement under bias stress and bias-illumination stress have been reported previously. This work proposes novel post processing low temperature long time annealing in optimum ambient in order to annihilate or reduce the defects and vacancies associated with amorphous material which lead to the instability or even the failure of the devices. Thin film transistors of a-IGZO has been tested for standalone illumination stress and bias-illumination stress before and after annealing. HP 4155B semiconductor parameter analyzer has been used to stress the devices and measure the output characteristics and transfer characteristics of the devices. Extra attention has been given about the effect of forming gas annealing on a-IGZO thin film. a-IGZO thin film deposited on silicon substrate has been tested for resistivity, mobility and carrier concentration before and after annealing in various ambient. Elastic Recoil Detection has been performed on the films to measure the amount of hydrogen atoms present in the film. Moreover, the circuit parameters of the thin film transistors has been extracted to verify the physical phenomenon responsible for the instability and failure of the devices. Parameters like channel resistance, carrier mobility, power factor has been extracted and variation of these parameters has been observed before and after the stress.
ContributorsRuhul Hasin, Muhammad (Author) / Alford, Terry L. (Thesis advisor) / Krause, Stephen (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2013
Description
Electromigration in metal interconnects is the most pernicious failure mechanism in semiconductor integrated circuits (ICs). Early electromigration investigations were primarily focused on aluminum interconnects for silicon-based ICs. An alternative metallization compatible with gallium arsenide (GaAs) was required in the development of high-powered radio frequency (RF) compound semiconductor devices operating at higher current densities and elevated temperatures. Gold-based metallization was implemented on GaAs devices because it uniquely forms a very low resistance ohmic contact and gold interconnects have superior electrical and thermal conductivity properties. Gold (Au) was also believed to have improved resistance to electromigration due to its higher melting temperature, yet electromigration reliability data on passivated Au interconnects is scarce and inadequate in the literature. Therefore, the objective of this research was to characterize the electromigration lifetimes of passivated Au interconnects under precisely controlled stress conditions with statistically relevant quantities to obtain accurate model parameters essential for extrapolation to normal operational conditions. This research objective was accomplished through measurement of electromigration lifetimes of large quantities of passivated electroplated Au interconnects utilizing high-resolution in-situ resistance monitoring equipment. Application of moderate accelerated stress conditions with a current density limited to 2 MA/cm2 and oven temperatures in the range of 300°C to 375°C avoided electrical overstress and severe Joule-heated temperature gradients. Temperature coefficients of resistance (TCRs) were measured to determine accurate Joule-heated Au interconnect film temperatures. A failure criterion of 50% resistance degradation was selected to prevent thermal runaway and catastrophic metal ruptures that are problematic of open circuit failure tests. Test structure design was optimized to reduce resistance variation and facilitate failure analysis. Characterization of the Au microstructure yielded a median grain size of 0.91 ìm. All Au lifetime distributions followed log-normal distributions and Black's model was found to be applicable. An activation energy of 0.80 ± 0.05 eV was measured from constant current electromigration tests at multiple temperatures. A current density exponent of 1.91 was extracted from multiple current densities at a constant temperature. Electromigration-induced void morphology along with these model parameters indicated grain boundary diffusion is dominant and the void nucleation mechanism controlled the failure time.
ContributorsKilgore, Stephen (Author) / Adams, James (Thesis advisor) / Schroder, Dieter (Thesis advisor) / Krause, Stephen (Committee member) / Gaw, Craig (Committee member) / Arizona State University (Publisher)
Created2013
Description
Recent literature indicates potential benefits in microchannel cooling if an inlet orifice is used to suppress pressure oscillations that develop under two-phase conditions. This study investigates the costs and benefits of using an adjustable microchannel inlet orifice. The focus is on orifice effect during steady-state boiling and critical heat flux (CHF) in the channels using R134a in a pumped refrigerant loop (PRL). To change orifice size, a dam controlled with a micrometer was placed in front of 31 parallel microchannels. Each channel had a hydraulic diameter of 0.235 mm and a length of 1.33 cm. For steady state two-phase conditions, mass fluxes of 300 kg m-2 s-1 and 600 kg m-2 s-1were investigated. For orifice sizes with a hydraulic diameter to unrestricted hydraulic diameter (Dh:Dh,ur) ratio less than 35 percent, oscillations were reduced and wall temperatures fell up to 1.5 °C. Critical heat flux data were obtained for 7 orifice sizes with mass fluxes from 186 kg m-2 s-1 to 847 kg m-2 s-1. For all mass fluxes and inlet conditions tested, CHF values for a Dh:Dh,ur ratio of 1.8 percent became increasingly lower (up to 37 W cm-2 less) than those obtained with larger orifices. An optimum orifice size with Dh:Dh,ur of 35 percent emerged, offering up to 5 W cm-2 increase in CHF over unrestricted conditions at the highest mass flux tested, 847 kg m-2 s-1. These improvements in cooling ability with inlet orifices in place under both steady-state and impending CHF conditions are modest, leading to the conclusion that inlet orifices are only mildly effective at improving heat transfer coefficients. Stability of the PRL used for experimentation was also studied and improved. A vapor compression cycle's (VCC) proportional, integral, and derivative controller was found to adversely affect stability within the PRL and cause premature CHF. Replacing the VCC with an ice water heat sink maintained steady pumped loop system pressures and mass flow rates. The ice water heat sink was shown to have energy cost savings over the use of a directly coupled VCC for removing heat from the PRL.
ContributorsOdom, Brent A (Author) / Phelan, Patrick E (Thesis advisor) / Herrmann, Marcus (Committee member) / Trimble, Steve (Committee member) / Tasooji, Amaneh (Committee member) / Holcomb, Don (Committee member) / Arizona State University (Publisher)
Created2012
Description
The optical valley of water, where water is transparent only in the visible range, is a fascinating phenomenon and cannot be modeled by conventional dielectric material modeling. While dielectric properties of materials can be modeled as a sum of Lorentz or Debye simple harmonic oscillators, water is the exception. In 1992 Diaz and Alexopoulos published a causal and passive circuit model that predicted the window of water by adding a “zero shunt” circuit in parallel with every Debye and Lorentz circuit branch. Other than the Diaz model, extensive literature survey yielded no universal dielectric material model that included water or offered an explanation for this window phenomenon. A hybrid phenomenological model of water, proposed by Shubitidze and Osterberg, was the only model other than the Diaz-Alexopoulos model that tried to predict and match the optical valley of water. However, we show that when we apply the requirement that the permittivity function must be a complex analytic function, it fails our test of causality and the model terms lack physical meaning, exhibiting various mathematical and physical contradictions. Left with only the Diaz proposed fundamental model as the only casual model, this dissertation explores its physical implications. Specifically, the theoretical prescription of Kyriazidou et al for creating artificial dielectric materials with a narrow band transparency is experimentally demonstrated for the first time at radiofrequencies. It is proposed that the most general component of the model of the frequency dependent permittivity of materials is not the simple harmonic oscillator but rather the harmonic oscillator augmented by the presence of a zero shunt circuit. The experimental demonstration illustrates the synthesis and design of a new generation of window materials based on that model. Physically realizable Lorentz coatings and RF Debye “molecules” for creating the desired windows material are designed using the full physics computational electromagnetic code. The prescribed material is then implemented in printed circuit board technology combined with composite manufacturing to successfully fabricate a lab demonstrator that exhibits a narrow RF window at a preselected frequency of interest. Demonstrator test data shows good agreement with HFSS predictions.
ContributorsAlam, Shahriar (Author) / Diaz, Rodolfo E (Thesis advisor) / Krause, Stephen (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2017
Description
The transition to lead-free solder in the electronics industry has benefited the environment in many ways. However, with new materials systems comes new materials issues. During the processing of copper pads, a protective surface treatment is needed to prevent the copper from oxidizing. Characterizing the copper oxidation underneath the surface treatment is challenging but necessary for product reliability and failure analysis. Currently, FIB-SEM, which is time-consuming and expensive, is what is used to understand and analyze the surface treatment-copper oxide(s)-copper system. This project's goals were to determine a characterization methodology that cuts both characterization time and cost in half for characterizing copper oxidation beneath a surface treatment and to determine which protective surface treatment is the best as defined by multiple criterion such as cost, sustainability, and reliability. Two protective surface treatments, organic solderability preservative (OSP) and chromium zincate, were investigated, and multiple characterization techniques were researched. Six techniques were tested, and three were deemed promising. Through our studies, it was determined that the best surface treatment was organic solderability preservative (OSP) and the ideal characterization methodology would be using FIB-SEM to calibrate a QCM model, along with using SERA to confirm the QCM model results. The methodology we propose would result in a 91% reduction in characterization cost and a 92% reduction in characterization time. Future work includes further calibration of the QCM model using more FIB/SEM data points and eventually creating a model for oxide layer thickness as a function of exposure time and processing temperature using QCM as the primary data source. An additional short essay on the role of SEM on the continuing miniaturization of integrated circuits is included at the end. This paper explores the intertwined histories of the scanning electron microscope and the integrated circuit, highlighting how advances in SEM influence integrated circuit advances.
ContributorsSmith, Bethany Blair (Co-author) / Marion, Branch Kelly (Co-author) / Cruz, Hernandez (Co-author) / Kimberly, McGuiness (Co-author) / Adams, James (Thesis director) / Krause, Stephen (Committee member) / Barrett, The Honors College (Contributor) / Materials Science and Engineering Program (Contributor)
Created2015-05
Description
The characteristics possessed by undergraduates who have enjoyed success in an intern position are defined. Through an interview process, four traits were identified: multitasking, strong team work understanding, an inquisitive nature, and application of a cross-disciplinary mindset. An exposition of how these four traits are employed to ensure success in an internship setting is then given. Finally, a personal account of a project with Intel is expounded upon. This project addressed the unoptimized characterization test time of an Intel package quality control process. It improved throughput by developing a parallel testing method by increasing package carrier capacity and utilizing simultaneous testing. The final design led to a 4x increase of throughput rate.
ContributorsHusein, Sebastian Saint Tsei (Author) / Adams, James (Thesis director) / Krause, Stephen (Committee member) / Jarrell, Joseph (Committee member) / Barrett, The Honors College (Contributor) / Materials Science and Engineering Program (Contributor)
Created2013-05
Description
In this work a newly fabricated organic solar cell based on a composite of fullerene derivative [6,6]-phenyl-C61 butyric acid methyl ester (PCBM) and regioregular poly (3-hexylthiophene) (P3HT) with an added interfacial layer of AgOx in between the PEDOT:PSS layer and the ITO layer is investigated. Previous equivalent circuit models are discussed and an equivalent circuit model is proposed for the fabricated device. Incorporation of the AgOx interfacial layer shows an increase in fill factor (by 33%) and power conversion efficiency (by 28%). Moreover proper correlation has been achieved between the experimental and simulated I-V plots. The simulation shows that device characteristics can be explained with accuracy by the proposed model.
ContributorsHossain, Nazmul (Author) / Alford, Terry L. (Thesis advisor) / Theodore, David (Committee member) / Krause, Stephen (Committee member) / Arizona State University (Publisher)
Created2015