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Description
Heavy metals such as selenium can be especially important to limit because they can cause serious health problems even at relatively low concentrations. In an effort to selectively remove selenium from solution, a PAABA (poly(aniline-co-p-aminobenzoic acid) conductive copolymer was synthesized in a selenic acid solution, and its ability to remove selenium was studied. Analysis of the Raman spectra confirmed the hypothesized formation of PAABA polymer. Constant voltage cycles showed success in precipitating the selenium out of solution via electroreduction, and ICP-MS confirmed the reduction of selenium concentrated in solution. These results indicate the PAABA synthesized in selenic acid shows promise for selective water treatment.
ContributorsSulzman, Serita Lynne (Author) / Wang, Qing Hua (Thesis director) / Chan, Candace (Committee member) / Materials Science and Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2020-05
Description
We designed and constructed a cryostat setup for MKID detectors. The goal for the cryostat is to have four stages: 40K, 4K, 1K and 250mK. Prior to the start of my thesis, the cryostat was reaching 70K and 9K on the first and second stages respectively. During the first semester of my thesis I worked on getting the second stage to reach below 4K such that it would be cold enough to add a sorption fridge to reach 250mK. Various parts were machined for the cryostat and some tweaks were made to existing pieces. The largest changes were we thinned our stainless steel supports from 2mm to 10mil and we added roughly 6-10 layers of multi-layer insulation to the first and second stages. Our result was that we now reach temperatures of 36K and 2.6K on the first and second stages respectively. Next we added the sorption fridge to the 4K stage by having the 4K stage remachined to allow the sorption fridge to be mounted to the stage. Then I designed a final, two stage, setup for the 1K and 250mK stages that has maximum capabilities of housing a six inch wafer for testing. The design was sent to a machinist, but the parts were unfinished by the end of my thesis, so the parts and stage were not tested. Once the cryostat was fully tested and proven to reach the necessary temperatures, preliminary testing was done on a Microwave Kinetic Inductance Detector (MKID) provided by Stanford. Data was collected on the resonance and quality factor as they shifted with final stage temperature (5K to 285mK) and with input power (60dB to 15dB). The data was analyzed and the results agreed within expectations, as the resonant frequency and quality factor shifted down with increased temperature on the MKID. Finally, a noise characterization setup was designed to test the noise of devices, but was not fully implemented.
ContributorsAbers, Paul (Author) / Mauskopf, Phil (Thesis director) / Groppi, Chris (Committee member) / Department of Physics (Contributor) / School of Earth and Space Exploration (Contributor) / Barrett, The Honors College (Contributor)
Created2017-05
Description
This work correlates microscopic material changes to short- and long-term performance in modern, Cu-doped, CdTe-based solar cells. Past research on short- and long-term performance emphasized the device-scale impact of Cu, but neglected the microscopic impact of the other chemical species in the system (e.g., Se, Cl, Cu), their distributions, their local atomic environments, or their interactions/reactions. Additionally, technological limitations precluded nanoscale measurements of the Cu distributions in the cell, and microscale measurements of the material properties (i.e. composition, microstructure, charge transport) as the cell operates. This research aims to answer (1) what is the spatial distribution of Cu in the cell, (2) how does its distribution and local environment correlate with cell performance, and (3) how do local material properties change as the cell operates? This work employs a multi-scale, multi-modal, correlative-measurement approach to elucidate microscopic mechanisms. Several analytical techniques are used – including and especially correlative synchrotron X-ray microscopy – and a unique state-of-the-art instrument was developed to access the dynamics of microscopic mechanisms as they proceed. The work shows Cu segregates around CdTe grain boundaries, and Cu-related acceptor penetration into the CdTe layer is crucial for well-performing cells. After long-term operation, the work presents strong evidence of Se migration into the CdTe layer. This redistribution correlates with microstructural changes in the CdTe layer and limited charge transport around the metal-CdTe interface. Finally, the work correlates changes in microstructure, Cu atomic environment, and charge collection as a cell operates. The results suggest that, as the cell ages, a change to Cu local environment limits charge transport through the metal-CdTe interface, and this change could be influenced by Se migration into the CdTe layer of the cell.
ContributorsWalker, Trumann (Author) / Bertoni, Mariana I (Thesis advisor) / Holman, Zachary (Committee member) / Chan, Candace (Committee member) / Colegrove, Eric (Committee member) / Arizona State University (Publisher)
Created2022
Description
Gallium Nitride (GaN) is uniquely suited for Radio Frequency (RF) and power electronic applications due to its intrinsically high saturation velocity and high mobility compared to Silicon and Silicon Carbide (SiC). High Electron Mobility Transistors (HEMTs) have remained the primary topology for GaN transistors in RF applications. However, GaN HEMTs suffer from a variety of issues such as current crowding, lack of enhancement mode (E-Mode) operation and non-linearity. These drawbacks slow the widespread adoption of GaN devices for ultra-low voltage (ULV) applications such as voltage regulators, automotive and computing applications. E-mode operation is especially desired in low-voltage high frequency switching applications. In this context, Fin Field Effect Transistors (FinFETs) offer an alternative topology for ULV applications as opposed to conventional HEMTs. Recent advances in material processing, high aspect ratio epitaxial growth and etching methods has led to an increased interest in 3D nanostructures such as Nano-FinFETs and Nanowire FETs. A typical 3D nano-FinFET is the AlGaN/GaN Metal Insulator Semiconductor (MIS) FET wherein a layer of Al2O3 surrounds the AlGaN/GaN fin. The presence of the side gates leads to additional lateral confinement of the 2D Electron Gas (2DEG). Theoretical calculations of transport properties in confined systems such as AlGaN/GaN Finfets are scarce compared to those of their planar HEMT counterparts.
A novel simulator is presented in this dissertation, which employs self-consistent solution of the coupled 1D Boltzmann – 2D Schrödinger – 3D Poisson problem, to yield the channel electrostatics and the low electric field transport characteristics of AlGaN/GaN MIS FinFETs. The low field electron mobility is determined by solving the Boltzmann transport equation in the Quasi-1D region using 1D Ensemble Monte Carlo method. Three electron-phonon scattering mechanisms (acoustic, piezoelectric and polar optical phonon scattering) and interface roughness scattering at the AlGaN/GaN interface are considered in this theoretical model. Simulated low-field electron mobility and its temperature dependence are in agreement with experimental data reported in the literature.
A quasi-1D version of alloy clustering model is derived and implemented and the limiting effect of alloy clustering on the low-field electron mobility is investigated for the first time for MIS FinFET device structures.
ContributorsKumar, Viswanathan Naveen (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen (Committee member) / Nemanich, Robert (Committee member) / Povolotskyi, Michael (Committee member) / Esqueda, Ivan Sanchez (Committee member) / Arizona State University (Publisher)
Created2022
Description
Hydrogen is considered one of the most potential fuels due to its highest gravimetric energy density with no pollutant emission during the energy cycle. Among several techniques for hydrogen generation, the promising photoelectrochemical water oxidation is considered a long-term solar pathway by splitting water. The system contains a photoanode and a cathode immersed in an aqueous electrolyte where charge separation takes place in the bulk of the semiconducting material on light absorption, leading to water oxidation/reduction at the surface of the photoelectrodes/cathode. It is imperative to develop materials that demonstrate high light absorption in the wide spectrum along with photoelectrochemical stability. N-type Monoclinic scheelite bismuth vanadate (BiVO4) is selected due to its incredible light absorption capabilities, direct bandgap (Eg ∼ 2.4-2.5 eV) and relatively better photoelectrochemical stability. However, BiVO4 encounters huge electron-hole recombination due to smaller diffusion lengths and positive conduction bands that cause slow charge dynamics and sluggish water oxidation kinetics. In order to improve the illustrated drawbacks, four strategies were discussed. Chapter 1 describe the fundamental understanding of photoelectrochemical cell and BiVO4. Chapter 2 illustrates details of the experimental procedure and state-of-the-art material characterization. Chapter 3 provide the impact of alkali metal placement in the crystal structure of BiVO4 systematically that exhibited ~20 times more performance than intrinsic BiVO4, almost complete bulk charge separation and enhancement in the diffusion length. Detailed characterization determined that the alkali metal getting placed in the interstitial void of BiVO4 lattice and multiple interbands formation enhanced the charge dynamics. Chapter 4 contains stoichiometric doping of Y3+ or Er3+ or Yb3+ at the Bi3+ site, leading to an extended absorption region, whereas non-stoichiometric W6+ doping at the V5+ site minimizes defects and increased charge carriers. To further enhance the performance, type-II heterojunction with WO3 along p-n junction with Fe:NiO enhance light absorption and charge dynamics close to the theoretical performance. Chapter 5 provides a comprehensive study of a uniquely developed sulfur modified Bi2O3 interface layer to facilitate charge dynamics and carrier lifetime improvement by effectively passivating the WO3/BiVO4 heterojunction interface. Finally, chapter 6 summarized the major findings, conclusion and outlook in developing BiVO4 as an efficient photoanode material.
ContributorsPrasad, Umesh (Author) / Kannan, Arunachala Mada (Thesis advisor) / Azeredo, Bruno (Committee member) / Chan, Candace (Committee member) / Segura, Sergio Garcia (Committee member) / Arizona State University (Publisher)
Created2021
Description
The Compact X-ray Light Source is an x-ray source at ASU that allows scientists to study the structures and dynamics of matter on an atomic scale. The radio frequency system that provides the power to accelerate electrons in the Compact X-ray Light Source must operate with a high degree of precision. This thesis measures the precision with which that system performs.
ContributorsBabic, Gregory (Author) / Graves, William (Thesis director) / Kitchen, Jennifer (Committee member) / Holl, Mark (Committee member) / Barrett, The Honors College (Contributor) / Electrical Engineering Program (Contributor) / Department of Physics (Contributor)
Created2022-05
Description
The metallization and interconnection of Si photovoltaic (PV) devices are among some of the most critically important aspects to ensure the PV cells and modules are cost-effective, highly-efficient, and robust through environmental stresses. The aim of this work is to contribute to the development of these innovations to move them closer to commercialization.Shingled PV modules and laser-welded foil-interconnected modules present an alternative to traditional soldered ribbons that can improve module power densities in a cost-effective manner. These two interconnection methods present new technical challenges for the PV industry. This work presents x-ray imaging methods to aid in the process-optimization of the application and curing of the adhesive material used in shingled modules. Further, detailed characterization of laser welds, their adhesion, and their effect on module performances is conducted. A strong correlation is found between the laser-weld adhesion and the modules’ durability through thermocycling. A minimum laser weld adhesion of 0.8 mJ is recommended to ensure a robust interconnection is formed.
Detailed characterization and modelling are demonstrated on a 21% efficient double-sided tunnel-oxide passivating contact (DS-TOPCon) cell. This technology uses a novel approach that uses the front-metal grid to etch-away the parasitically-absorbing poly-Si material everywhere except for underneath the grid fingers. The modelling yielded a match to the experimental device within 0.06% absolute of its efficiency. This DS-TOPCon device could be improved to a 23.45%-efficient device by improving the optical performance, n-type contact resistivity, and grid finger aspect ratio.
Finally, a modelling approach is explored for simulating Si thermophotovoltaic (TPV) devices. Experimentally fabricated diffused-junction devices are used to validate the optical and electrical aspects of the model. A peak TPV efficiency of 6.8% is predicted for the fabricated devices, but a pathway to 32.5% is explained by reducing the parasitic absorption of the contacts and reducing the wafer thickness. Additionally, the DS-TOPCon technology shows the potential for a 33.7% efficient TPV device.
ContributorsHartweg, Barry (Author) / Holman, Zachary (Thesis advisor) / Chan, Candace (Committee member) / Bertoni, Mariana (Committee member) / Yu, Zhengshan (Committee member) / Arizona State University (Publisher)
Created2023
Description
Wide Bandgap (WBG) semiconductor materials are shaping day-to-day technologyby introducing powerful and more energy responsible devices. These materials have
opened the door for building basic semiconductor devices which are superior in terms of
handling high voltages, high currents, power, and temperature which is not possible using
conventional silicon technology. As the research continues in the field of WBG based
devices, there is a potential chance that the power electronics industry can save billions of
dollars deploying energy-efficient circuits in high power conversion electronics. Diamond,
silicon carbide and gallium nitride are the top three contenders among which diamond can
significantly outmatch others in a variety of properties. However, diamond technology is
still in its early phase of development and there are challenges involved in many aspects of
processing a successful integrated circuit. The work done in this research addresses three
major aspects of problems related to diamond technology. In the first part, the applicability
of compact modeling and Technology Computer-Aided Design (TCAD) modeling
technique for diamond Schottky p-i-n diodes has been demonstrated. The compact model
accurately predicts AC, DC and nonlinear behavior of the diode required for fast circuit
simulation. Secondly, achieving low resistance ohmic contact onto n-type diamond is one
of the major issues that is still an open research problem as it determines the performance
of high-power RF circuits and switching losses in power converters circuits. So, another
portion of this thesis demonstrates the achievement of very low resistance ohmic contact
(~ 10-4 Ω⋅cm2) onto n-type diamond using nano crystalline carbon interface layer. Using
the developed TCAD and compact models for low resistance contacts, circuit level
predictions show improvements in RF performance. Lastly, an initial study of breakdown
characteristics of diamond and cubic boron nitride heterostructure is presented. This study
serves as a first step for making future transistors using diamond and cubic boron nitride –
a very less explored material system in literature yet promising for extreme circuit
applications involving high power and temperature.
ContributorsJHA, VISHAL (Author) / Thornton, Trevor (Thesis advisor) / Goodnick, Stephen (Committee member) / Nemanich, Robert (Committee member) / Alford, Terry (Committee member) / Hoque, Mazhar (Committee member) / Arizona State University (Publisher)
Created2023
Description
This paper aims to analyze and estimate the factors affecting the State of Health (SoH) of lithium-ion batteries by leveraging advanced evaluation of electrical and chemo-mechanical processes contributing to degradation. The focus was on characterization and collection of empirical battery cycling data investigating the impact of different input variables on SoH prediction to enable predictions for capacity and degradation to validate reliability for second-life applications. The methodology involves collecting cycling data alongside Electrochemical Impedance Spectroscopy (EIS) using a custom test protocol under varied temperatures and charging rates to simulate real-world conditions. The alterations in capacity and the variation of the open circuit voltage with increasing cycles across different temperatures and c rates are also analyzed. The proposed method facilitates a better understanding of the interplay between temperature and C rates on the capacity, open circuit voltage, nominal voltage and EIS response to help estimate the SoH of lithium-ion batteries.
ContributorsMargoschis, Selva Seelan (Author) / Rolston, Nicholas (Thesis advisor) / Chan, Candace (Committee member) / Hwa, Yoon (Committee member) / Arizona State University (Publisher)
Created2024
Description
Gallium Nitride (GaN), being a wide-bandgap semiconductor, shows its advantage over the conventional semiconductors like Silicon and Gallium Arsenide for high temperature applications, especially in the temperature range from 300°C to 600°C. Development of stable ohmic contacts to GaN with low contact resistivity has been identified as a prerequisite to the success of GaN high temperature electronics. The focus of this work was primarily derived from the requirement of an appropriate metal contacts to work with GaN-based hybrid solar cell operating at high temperature.
Alloyed Ti/Al/Ni/Au contact and non-alloyed Al/Au contact were developed to form low-resistivity contacts to n-GaN and their stability at high temperature were studied. The alloyed Ti/Al/Ni/Au contact offered a specific contact resistivity (ρc) of 6×10-6 Ω·cm2 at room temperature measured the same as the temperature increased to 400°C. No significant change in ρc was observed after the contacts being subjected to 400°C, 450°C, 500°C, 550°C, and 600°C, respectively, for at least 4 hours in air. Since several device technology prefer non-alloyed contacts Al/Au metal stack was applied to form the contacts to n-type GaN. An initial ρc of 3×10-4 Ω·cm2, measured after deposition, was observed to continuously reduce under thermal stress at 400°C, 450°C, 500°C, 550°C, and 600°C, respectively, finally stabilizing at 5×10-6 Ω·cm2. Both the alloyed and non-alloyed metal contacts showed exceptional capability of stable operation at temperature as high as 600°C in air with low resistivity ~10-6 Ω·cm2, with ρc lowering for the non-alloyed contacts with high temperatures.
The p-GaN contacts showed remarkably superior ohmic behavior at elevated temperatures. Both ρc and sheet resistance (Rsh) of p-GaN decreased by a factor of 10 as the ambient temperature increased from room temperature to 390°C. The annealed Ni/Au contact showed ρc of 2×10-3 Ω·cm2 at room temperature, reduced to 1.6×10-4 Ω·cm2 at 390°C. No degradation was observed after the contacts being subjected to 450°C in air for 48 hours. Indium Tin Oxide (ITO) contacts, which has been widely used as current spreading layer in GaN-base optoelectronic devices, measured an initial ρc [the resistivity of the ITO/p-GaN interface, since the metal/ITO ρc is negligible] of 1×10-2 Ω·cm2 at room temperature. No degradation was observed after the contact being subjected to 450°C in air for 8 hours.
Accelerated life testing (ALT) was performed to further evaluate the contacts stability at high temperatures quantitatively. The ALT results showed that the annealed Ni/Au to p-GaN contacts is more stable in nitrogen ambient, with a lifetime of 2,628 hours at 450°C which is approximately 12 times longer than that at 450°C in air.
Alloyed Ti/Al/Ni/Au contact and non-alloyed Al/Au contact were developed to form low-resistivity contacts to n-GaN and their stability at high temperature were studied. The alloyed Ti/Al/Ni/Au contact offered a specific contact resistivity (ρc) of 6×10-6 Ω·cm2 at room temperature measured the same as the temperature increased to 400°C. No significant change in ρc was observed after the contacts being subjected to 400°C, 450°C, 500°C, 550°C, and 600°C, respectively, for at least 4 hours in air. Since several device technology prefer non-alloyed contacts Al/Au metal stack was applied to form the contacts to n-type GaN. An initial ρc of 3×10-4 Ω·cm2, measured after deposition, was observed to continuously reduce under thermal stress at 400°C, 450°C, 500°C, 550°C, and 600°C, respectively, finally stabilizing at 5×10-6 Ω·cm2. Both the alloyed and non-alloyed metal contacts showed exceptional capability of stable operation at temperature as high as 600°C in air with low resistivity ~10-6 Ω·cm2, with ρc lowering for the non-alloyed contacts with high temperatures.
The p-GaN contacts showed remarkably superior ohmic behavior at elevated temperatures. Both ρc and sheet resistance (Rsh) of p-GaN decreased by a factor of 10 as the ambient temperature increased from room temperature to 390°C. The annealed Ni/Au contact showed ρc of 2×10-3 Ω·cm2 at room temperature, reduced to 1.6×10-4 Ω·cm2 at 390°C. No degradation was observed after the contacts being subjected to 450°C in air for 48 hours. Indium Tin Oxide (ITO) contacts, which has been widely used as current spreading layer in GaN-base optoelectronic devices, measured an initial ρc [the resistivity of the ITO/p-GaN interface, since the metal/ITO ρc is negligible] of 1×10-2 Ω·cm2 at room temperature. No degradation was observed after the contact being subjected to 450°C in air for 8 hours.
Accelerated life testing (ALT) was performed to further evaluate the contacts stability at high temperatures quantitatively. The ALT results showed that the annealed Ni/Au to p-GaN contacts is more stable in nitrogen ambient, with a lifetime of 2,628 hours at 450°C which is approximately 12 times longer than that at 450°C in air.
ContributorsZhao, Shirong (Author) / Chowdhury, Srabanti (Thesis advisor) / Goodnick, Stephen (Committee member) / Zhao, Yuji (Committee member) / Nemanich, Robert (Committee member) / Arizona State University (Publisher)
Created2016