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Description
The molecular beam epitaxy growth of the III-V semiconductor alloy indium arsenide antimonide bismide (InAsSbBi) is investigated over a range of growth temperatures and V/III flux ratios. Bulk and quantum well structures grown on gallium antimonide (GaSb) substrates are examined. The relationships between Bi incorporation, surface morphology, growth temperature, and group-V flux are explored. A growth model is developed based on the kinetics of atomic desorption, incorporation, surface accumulation, and droplet formation. The model is applied to InAsSbBi, where the various process are fit to the Bi, Sb, and As mole fractions. The model predicts a Bi incorporation limit for lattice matched InAsSbBi grown on GaSb.The optical performance and bandgap energy of InAsSbBi is examined using photoluminescence spectroscopy. Emission is observed from low to room temperature with peaks ranging from 3.7 to 4.6 μm. The bandgap as function of temperature is determined from the first derivative maxima of the spectra fit to an Einstein single oscillator model. The photoluminescence spectra is observed to significantly broaden with Bi content as a result of lateral composition variations and the highly mismatched nature of Bi atoms, pairs, and clusters in the group-V sublattice.
A bowing model is developed for the bandgap and band offsets of the quinary alloy GaInAsSbBi and its quaternary constituents InAsSbBi and GaAsSbBi. The band anticrossing interaction due to the highly mismatched Bi atoms is incorporated into the relevant bowing terms. An algorithm is developed for the design of mid infrared GaInAsSbBi
quantum wells, with three degrees freedom to independently tune transition energy, in plane strain, and band edge offsets for desired electron and hole confinement.
The physical characteristics of the fundamental absorption edge of the relevant III-V binaries GaAs, GaSb, InAs, and InSb are examined using spectroscopic ellipsometry. A five parameter model is developed that describes the key physical characteristics of the absorption edge, including the bandgap energy, the Urbach tail, and the absorption coefficient at the bandgap.
The quantum efficiency and recombination lifetimes of bulk InAs0.911Sb0.089 grown by molecular beam epitaxy is investigated using excitation and temperature dependent steady state photoluminescence. The Shockley-Read-Hall, radiative, and Auger recombination lifetimes are determined.
A bowing model is developed for the bandgap and band offsets of the quinary alloy GaInAsSbBi and its quaternary constituents InAsSbBi and GaAsSbBi. The band anticrossing interaction due to the highly mismatched Bi atoms is incorporated into the relevant bowing terms. An algorithm is developed for the design of mid infrared GaInAsSbBi
quantum wells, with three degrees freedom to independently tune transition energy, in plane strain, and band edge offsets for desired electron and hole confinement.
The physical characteristics of the fundamental absorption edge of the relevant III-V binaries GaAs, GaSb, InAs, and InSb are examined using spectroscopic ellipsometry. A five parameter model is developed that describes the key physical characteristics of the absorption edge, including the bandgap energy, the Urbach tail, and the absorption coefficient at the bandgap.
The quantum efficiency and recombination lifetimes of bulk InAs0.911Sb0.089 grown by molecular beam epitaxy is investigated using excitation and temperature dependent steady state photoluminescence. The Shockley-Read-Hall, radiative, and Auger recombination lifetimes are determined.
ContributorsSchaefer, Stephen Thomas (Author) / Johnson, Shane R (Thesis advisor) / Zhang, Yong-Hang (Committee member) / Goryll, Michael (Committee member) / King, Richard (Committee member) / Arizona State University (Publisher)
Created2020
Description
Single-layer pentagonal materials have received limited attention compared with their counterparts with hexagonal structures. They are two-dimensional (2D) materials with pentagonal structures, that exhibit novel electronic, optical, or magnetic properties. There are 15 types of pentagonal tessellations which allow plenty of options for constructing 2D pentagonal lattices. Few of them have been explored theoretically or experimentally. Studying this new type of 2D materials with density functional theory (DFT) will inspire the discovery of new 2D materials and open up applications of these materials in electronic and magnetic devices.In this dissertation, DFT is applied to discover novel 2D materials with pentagonal structures. Firstly, I examine the possibility of forming a 2D nanosheet with the vertices of type 15 pentagons occupied by boron, silicon, phosphorous, sulfur, gallium, germanium or tin atoms. I obtain different rearranged structures such as a single-layer gallium sheet with triangular patterns. Then the exploration expands to other 14 types of pentagons, leading to the discoveries of carbon nanosheets with Cairo tessellation (type 2/4 pentagons) and other patterns. The resulting 2D structures exhibit diverse electrical properties. Then I reveal the hidden Cairo tessellations in the pyrite structures and discover a family of planar 2D materials (such as PtP2), with a chemical formula of AB2 and space group pa ̄3. The combination of DFT and geometries opens up a novel route for the discovery of new 2D materials. Following this path, a series of 2D pentagonal materials such as 2D CoS2 are revealed with promising electronic and magnetic applications. Specifically, the DFT calculations show that CoS2 is an antiferromagnetic semiconductor with a band gap of 2.24 eV, and a N ́eel temperature of about 20 K. In order to enhance the superexchange interactions between the ions in this binary compound, I explore the ternary 2D pentagonal material CoAsS, that lacks the inversion symmetry. I find out CoAsS exhibits a higher Curie temperature of 95 K and a sizable piezoelectricity (d11=-3.52 pm/V). In addition to CoAsS, 34 ternary 2D pentagonal materials are discovered, among which I focus on FeAsS, that is a semiconductor showing strong magnetocrystalline anisotropy and sizable Berry curvature. Its magnetocrystalline anisotropy energy is 440 μeV/Fe ion, higher than many other 2D magnets that have been found.
Overall, this work not only provides insights into the structure-property relationship of 2D pentagonal materials and opens up a new route of studying 2D materials by combining geometry and computational materials science, but also shows the potential applications of 2D pentagonal materials in electronic and magnetic devices.
Overall, this work not only provides insights into the structure-property relationship of 2D pentagonal materials and opens up a new route of studying 2D materials by combining geometry and computational materials science, but also shows the potential applications of 2D pentagonal materials in electronic and magnetic devices.
ContributorsLiu, Lei (Author) / Zhuang, Houlong (Thesis advisor) / Singh, Arunima (Committee member) / Jiao, Yang (Committee member) / Arizona State University (Publisher)
Created2020
Description
A Single Event Transient (SET) is a transient voltage pulse induced by an ionizing radiation particle striking a combinational logic node in a circuit. The probability of a storage element capturing the transient pulse depends on the width of the pulse. Measuring the rate of occurrence and the distribution of SET pulse widths is essential to understand the likelihood of soft errors and to develop cost-effective mitigation schemes. Existing research measures the pulse width of SETs in bulk Complementary Metal-Oxide-Semiconductor (CMOS) and Silicon On Insulator (SOI) technologies, but not on Fin Field-Effect Transistors (FinFETs). This thesis focuses on developing a test structure on the FinFET process to generate, propagate, and separate SETs and build a time-to-digital converter to measure the pulse width of SET.
The proposed SET test structure statistically separates SETs generated at NMOS and PMOS based on the difference in restoring current. It consists of N-collection devices to collect events at NMOS and P-collection devices to collect events at PMOS. The events that occur in PMOS of the N-collection device and NMOS of the P-collection device are false events. The logic gates of the collection devices are skewed to perform pulse expansion so that a minimally sustained SET propagates without getting suppressed by the contamination delay. A symmetric tree structure with an S-R latch event detector localizes the location of the SET. The Cartesian coordinates-based pulse injection structure injects external pulses at specific nodes to perform instrumentation and calibrate the measurement. A thermometer-encoded chain (vernier chain) with mismatched delay paths measures the width of the SET.
For low Linear Energy Transfer (LET) tests, the false events are entirely masked and do not propagate since the amount of charge that has to be deposited for successful event propagation is significantly high. In the case of high LET tests, the actual events and false events propagate, but they can be separated based on the SET location and the width of the output event. The vernier chain has a high measurement resolution of ~3.5ps, which aids in separating the events.
The proposed SET test structure statistically separates SETs generated at NMOS and PMOS based on the difference in restoring current. It consists of N-collection devices to collect events at NMOS and P-collection devices to collect events at PMOS. The events that occur in PMOS of the N-collection device and NMOS of the P-collection device are false events. The logic gates of the collection devices are skewed to perform pulse expansion so that a minimally sustained SET propagates without getting suppressed by the contamination delay. A symmetric tree structure with an S-R latch event detector localizes the location of the SET. The Cartesian coordinates-based pulse injection structure injects external pulses at specific nodes to perform instrumentation and calibrate the measurement. A thermometer-encoded chain (vernier chain) with mismatched delay paths measures the width of the SET.
For low Linear Energy Transfer (LET) tests, the false events are entirely masked and do not propagate since the amount of charge that has to be deposited for successful event propagation is significantly high. In the case of high LET tests, the actual events and false events propagate, but they can be separated based on the SET location and the width of the output event. The vernier chain has a high measurement resolution of ~3.5ps, which aids in separating the events.
ContributorsShreedharan, Sanjay (Author) / Brunhaver, John (Thesis advisor) / Clark, Lawrence (Committee member) / Sanchez Esqueda, Ivan (Committee member) / Arizona State University (Publisher)
Created2020
Description
This work analyzes and develops a point-of-load (PoL) synchronous buck converter using enhancement-mode Gallium Nitride (e-GaN), with emphasis on optimizing reverse conduction loss by using a well-known technique of placing an anti-parallel Schottky diode across the synchronous power device. This work develops an improved analytical switching model for the GaN-based converter with the Schottky diode using piecewise linear approximations.
To avoid a shoot-through between the power switches of the buck converter, a small dead-time is inserted between gate drive switching transitions. Despite optimum dead-time management for a power converter, optimum dead-times vary for different load conditions. These variations become considerably large for PoL applications, which demand high output current with low output voltages. At high switching frequencies, these variations translate into losses that contribute significantly to the total loss of the converter. To understand and quantify power loss in a hard-switching buck converter that uses a GaN power device in parallel with a Schottky diode, piecewise transitions are used to develop an analytical switching model that quantifies the contribution of reverse conduction loss of GaN during dead-time.
The effects of parasitic elements on the dynamics of the switching converter are investigated during one switching cycle of the converter. A designed prototype of a buck converter is correlated to the predicted model to determine the accuracy of the model. This comparison is presented using simulations and measurements at 400 kHz and 2 MHz converter switching speeds for load (1A) condition and fixed dead-time values. Furthermore, performance of the buck converter with and without the Schottky diode is also measured and compared to demonstrate and quantify the enhanced performance when using an anti-parallel diode. The developed power converter achieves peak efficiencies of 91.7% and 93.86% for 2 MHz and 400 KHz switching frequencies, respectively, and drives load currents up to 6A for a voltage conversion from 12V input to 3.3V output.
In addition, various industry Schottky diodes have been categorized based on their packaging and electrical characteristics and the developed analytical model provides analytical expressions relating the diode characteristics to power stage performance parameters. The performance of these diodes has been characterized for different buck converter voltage step-down ratios that are typically used in industry applications and different switching frequencies ranging from 400 KHz to 2 MHz.
To avoid a shoot-through between the power switches of the buck converter, a small dead-time is inserted between gate drive switching transitions. Despite optimum dead-time management for a power converter, optimum dead-times vary for different load conditions. These variations become considerably large for PoL applications, which demand high output current with low output voltages. At high switching frequencies, these variations translate into losses that contribute significantly to the total loss of the converter. To understand and quantify power loss in a hard-switching buck converter that uses a GaN power device in parallel with a Schottky diode, piecewise transitions are used to develop an analytical switching model that quantifies the contribution of reverse conduction loss of GaN during dead-time.
The effects of parasitic elements on the dynamics of the switching converter are investigated during one switching cycle of the converter. A designed prototype of a buck converter is correlated to the predicted model to determine the accuracy of the model. This comparison is presented using simulations and measurements at 400 kHz and 2 MHz converter switching speeds for load (1A) condition and fixed dead-time values. Furthermore, performance of the buck converter with and without the Schottky diode is also measured and compared to demonstrate and quantify the enhanced performance when using an anti-parallel diode. The developed power converter achieves peak efficiencies of 91.7% and 93.86% for 2 MHz and 400 KHz switching frequencies, respectively, and drives load currents up to 6A for a voltage conversion from 12V input to 3.3V output.
In addition, various industry Schottky diodes have been categorized based on their packaging and electrical characteristics and the developed analytical model provides analytical expressions relating the diode characteristics to power stage performance parameters. The performance of these diodes has been characterized for different buck converter voltage step-down ratios that are typically used in industry applications and different switching frequencies ranging from 400 KHz to 2 MHz.
ContributorsKoli, Gauri (Author) / Kitchen, Jennifer (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Ozev, Sule (Committee member) / Arizona State University (Publisher)
Created2020
Description
Energy return in footwear is associated with the damping behavior of midsole foams, which stems from the combination of cellular structure and polymeric material behavior. Recently, traditional ethyl vinyl acetate (EVA) foams have been replaced by BOOST(TM) foams, thereby reducing the energetic cost of running. These are bead foams made from expanded thermoplastic polyurethane (eTPU), which have a multi-scale structure consisting of fused porous beads, at the meso-scale, and thousands of small closed cells within the beads at the micro-scale. Existing predictive models coarsely describe the macroscopic behavior but do not take into account strain localizations and microstructural heterogeneities. Thus, enhancement in material performance and optimization requires a comprehensive understanding of the foam’s cellular structure at all length scales and its influence on mechanical response.
This dissertation focused on characterization and deformation behavior of eTPU bead foams with a unique graded cell structure at the micro and meso-scale. The evolution of the foam structure during compression was studied using a combination of in situ lab scale and synchrotron x-ray tomography using a four-dimensional (4D, deformation + time) approach. A digital volume correlation (DVC) method was developed to elucidate the role of cell structure on local deformation mechanisms. The overall mechanical response was also studied ex situ to probe the effect of cell size distribution on the force-deflection behavior. The radial variation in porosity and ligament thickness profoundly influenced the global mechanical behavior. The correlation of changes in void size and shape helped in identifying potentially weak regions in the microstructure. Strain maps showed the initiation of failure in cell structure and it was found to be influenced by the heterogeneities around the immediate neighbors in a cluster of voids. Poisson’s ratio evaluated from DVC was related to the microstructure of the bead foams. The 4D approach taken here provided an in depth and mechanistic understanding of the material behavior, both at the bead and plate levels, that will be invaluable in designing the next generation of high-performance footwear.
This dissertation focused on characterization and deformation behavior of eTPU bead foams with a unique graded cell structure at the micro and meso-scale. The evolution of the foam structure during compression was studied using a combination of in situ lab scale and synchrotron x-ray tomography using a four-dimensional (4D, deformation + time) approach. A digital volume correlation (DVC) method was developed to elucidate the role of cell structure on local deformation mechanisms. The overall mechanical response was also studied ex situ to probe the effect of cell size distribution on the force-deflection behavior. The radial variation in porosity and ligament thickness profoundly influenced the global mechanical behavior. The correlation of changes in void size and shape helped in identifying potentially weak regions in the microstructure. Strain maps showed the initiation of failure in cell structure and it was found to be influenced by the heterogeneities around the immediate neighbors in a cluster of voids. Poisson’s ratio evaluated from DVC was related to the microstructure of the bead foams. The 4D approach taken here provided an in depth and mechanistic understanding of the material behavior, both at the bead and plate levels, that will be invaluable in designing the next generation of high-performance footwear.
ContributorsSundaram Singaravelu, Arun Sundar (Author) / Chawla, Nikhilesh (Thesis advisor) / Emady, Heather (Committee member) / Jiao, Yang (Committee member) / Arizona State University (Publisher)
Created2020
Description
In recent years, the Silicon Super-Junction (SJ) power metal-oxide semiconductor field-effect transistor (MOSFET), has garnered significant interest from spacecraft designers. This is due to their high breakdown voltage and low specific on-state resistance characteristics. Most of the previous research work on power MOSFETS for space applications concentrated on improving the radiation tolerance of low to medium voltage (~ 300V) power MOSFETs. Therefore, understanding and improving the reliability of high voltage SJMOS for the harsh space radiation environment is an important endeavor.In this work, a 600V commercially available silicon planar gate SJMOS is used to study the SJ technology’s tolerance against total ionizing dose (TID) and destructive single event effects (SEE), such as, single event burnout (SEB) and single event gate rupture (SEGR). A technology computer aided design (TCAD) software tool is used to design the SJMOS and simulate its electrical characteristics.
Electrical characterization of SJMOS devices showed substantial decrease in threshold voltage and increase in leakage current due to TID. Therefore, as a solution to improve the TID tolerance, metal-nitride-oxide-semiconductor (MNOS) capacitors with different oxide
itride thickness combinations were fabricated and irradiated using a Co-60 gamma-source. Electrical characterization showed all samples with oxide
itride stack gate insulators exhibited significantly higher tolerance to irradiation when compared to metal-oxide-semiconductor capacitors.
Heavy ion testing of the SJMOS showed the device failed due to SEB and SEGR at 10% of maximum rated bias values. In this work, a 600V SJMOS structure is designed that is tolerant to both SEB and SEGR. In a SJMOS with planar gate, reducing the neck width improves the tolerance to SEGR but significantly changes the device electrical characteristics. The trench gate SJ device design is shown to overcome this problem. A buffer layer and larger P+-plug are added to the trench gate SJ power transistor to improve SEB tolerance. Using TCAD simulations, the proposed trench gate structure and the tested planar gate SJMOS are compared. The simulation results showed that the SEB and SEGR hardness in the proposed structure has improved by a factor of 10 and passes at the device’s maximum rated bias value with improved electrical performance.
Electrical characterization of SJMOS devices showed substantial decrease in threshold voltage and increase in leakage current due to TID. Therefore, as a solution to improve the TID tolerance, metal-nitride-oxide-semiconductor (MNOS) capacitors with different oxide
itride thickness combinations were fabricated and irradiated using a Co-60 gamma-source. Electrical characterization showed all samples with oxide
itride stack gate insulators exhibited significantly higher tolerance to irradiation when compared to metal-oxide-semiconductor capacitors.
Heavy ion testing of the SJMOS showed the device failed due to SEB and SEGR at 10% of maximum rated bias values. In this work, a 600V SJMOS structure is designed that is tolerant to both SEB and SEGR. In a SJMOS with planar gate, reducing the neck width improves the tolerance to SEGR but significantly changes the device electrical characteristics. The trench gate SJ device design is shown to overcome this problem. A buffer layer and larger P+-plug are added to the trench gate SJ power transistor to improve SEB tolerance. Using TCAD simulations, the proposed trench gate structure and the tested planar gate SJMOS are compared. The simulation results showed that the SEB and SEGR hardness in the proposed structure has improved by a factor of 10 and passes at the device’s maximum rated bias value with improved electrical performance.
ContributorsMuthuseenu, Kiraneswar (Author) / Barnaby, Hugh (Thesis advisor) / Kozicki, Michael (Committee member) / Holbert, Keith E. (Committee member) / Gonzalez Velo, Yago (Committee member) / Arizona State University (Publisher)
Created2020
Machine Learning-based Analysis of the Relationship Between the Human Gut Microbiome and Bone Health
Description
The Human Gut Microbiome (GM) modulates a variety of structural, metabolic, and protective functions to benefit the host. A few recent studies also support the role of the gut microbiome in the regulation of bone health. The relationship between GM and bone health was analyzed based on the data collected from a group of twenty-three adolescent boys and girls who participated in a controlled feeding study, during which two different doses (0 g/d fiber and 12 g/d fiber) of Soluble Corn Fiber (SCF) were added to their diet. This analysis was performed by predicting measures of Bone Mineral Density (BMD) and Bone Mineral Content (BMC) which are indicators of bone strength, using the GM sequence of proportions of 178 microbes collected from 23 subjects, by building a machine learning regression model. The model developed was evaluated by calculating performance metrics such as Root Mean Squared Error, Pearson’s correlation coefficient, and Spearman’s rank correlation coefficient, using cross-validation. A noticeable correlation was observed between the GM and bone health, and it was observed that the overall prediction correlation was higher with SCF intervention (r ~ 0.51). The genera of microbes that played an important role in this relationship were identified. Eubacterium (g), Bacteroides (g), Megamonas (g), Acetivibrio (g), Faecalibacterium (g), and Paraprevotella (g) were some of the microbes that showed an increase in proportion with SCF intervention.
ContributorsKetha Hazarath, Pravallika Reddy (Author) / Bliss, Daniel (Thesis advisor) / Whisner, Corrie (Committee member) / Dasarathy, Gautam (Committee member) / Arizona State University (Publisher)
Created2020
Description
Daily collaborative tasks like pushing a table or a couch require haptic communication between the people doing the task. To design collaborative motion planning algorithms for such applications, it is important to understand human behavior. Collaborative tasks involve continuous adaptations and intent recognition between the people involved in the task. This thesis explores the coordination between the human-partners through a virtual setup involving continuous visual feedback. The interaction and coordination are modeled as a two-step process: 1) Collecting data for a collaborative couch-pushing task, where both the people doing the task have complete information about the goal but are unaware of each other's cost functions or intentions and 2) processing the emergent behavior from complete information and fitting a model for this behavior to validate a mathematical model of agent-behavior in multi-agent collaborative tasks. The baseline model is updated using different approaches to resemble the trajectories generated by these models to human trajectories. All these models are compared to each other. The action profiles of both the agents and the position and velocity of the manipulated object during a goal-oriented task is recorded and used as expert-demonstrations to fit models resembling human behaviors. Analysis through hypothesis teasing is also performed to identify the difference in behaviors when there are complete information and information asymmetry among agents regarding the goal position.
ContributorsShintre, Pallavi Shrinivas (Author) / Zhang, Wenlong (Thesis advisor) / Si, Jennie (Committee member) / Ren, Yi (Committee member) / Arizona State University (Publisher)
Created2020
Description
The first part of this dissertation reports the study of the vertical carrier transport and device application in InAs/InAs1-xSbx strain-balanced type-II superlattice. It is known that the low hole mobility in the InAs/InAs1-xSbx superlattice is considered as the main reason for the low internal quantum efficiency of its mid-wave and long-wave infrared photodetectors, compared with that of its HgCdTe counterparts. Optical measurements using time-resolved photoluminescence and steady-state photoluminescence spectroscopy are implemented to extract the diffusion coefficients and mobilities of holes in the superlattices at various temperatures from 12 K to 210 K. The sample structure consists of a mid-wave infrared superlattice absorber region grown atop a long-wave infrared superlattice probe region. An ambipolar diffusion model is adopted to extract the hole mobility. The results show that the hole mobility first increases from 0.2 cm2/Vs at 12 K and then levels off at ~50 cm2/Vs as the temperature exceeds ~60 K. An InAs/InAs1-xSbx type-II superlattice nBn long-wavelength barrier infrared photodetector has also been demonstrated with a measured dark current density of 9.5×10-4 A/cm2 and a maximum resistance-area product of 563 Ω-cm2 at 77 K under a bias of -0.5 V. The Arrhenius plot of the dark current density reveals a possible high-operating-temperature of 110 K.The second part of the dissertation reports a lift-off technology using a water-soluble sacrificial MgTe layer grown on InSb. This technique enables the seamless integration of materials with lattice constants near 6.5 Å, such as InSb, CdTe, PbTe, HgTe and Sn. Coherently strained MgTe with a lattice constant close to 6.5 Å acts as a sacrificial layer which reacts with water and releases the film above it. Freestanding CdTe/MgxCd1-xTe double-heterostructures resulting from the lift-off process show increased photoluminescence intensity due to enhanced extraction efficiency and photon-recycling effect. The lifted-off thin films show smooth and flat surfaces with 6.7 Å root-mean-square roughness revealed by atomic-force microscopy profiles. The increased photoluminescence intensity also confirms that the CdTe/MgxCd1-xTe double-heterostructures maintain the high optical quality after epitaxial lift-off.
ContributorsTsai, Cheng-Ying (Author) / Zhang, Yong-Hang YZ (Thesis advisor) / Vasileska, Dragica DV (Committee member) / Johnson, Shane SJ (Committee member) / Zhao, Yuji YZ (Committee member) / Arizona State University (Publisher)
Created2020
Description
Modular multilevel converters (MMCs) have become an attractive technology for high power applications. One of the main challenges associated with control and operation of the MMC-based systems is to smoothly precharge submodule (SM) capacitors to the nominal voltage during the startup process. The existing closed-loop methods require additional effort to analyze the small-signal model of MMC and tune control parameters. The existing open-loop methods require auxiliary voltage sources to charge SM capacitors, which add to the system complexity and cost. A generalized precharging strategy is proposed in this thesis.
For large-scale MMC-embedded power systems, it is required to investigate dynamic performance, fault characteristics, and stability. Modeling of the MMC is one of the challenges associated with the study of large-scale MMC-based power systems. The existing models of MMC did not consider the various configurations of SMs and different operating conditions. An improved equivalent circuit model is proposed in this thesis.
The solid state transformer (SST) has been investigated for the distribution systems to reduce the volume and weight of power transformer. Recently, the MMC is employed into the SST due to its salient features. For design and control of the MMC-based SST, its operational principles are comprehensively analyzed. Based on the analysis, its mathematical model is developed for evaluating steady-state performances. For optimal design of the MMC-based SST, the mathematical model is modified by considering circuit parameters.
One of the challenges of the MMC-based SST is the balancing of capacitor voltages. The performances of various voltage balancing algorithms and different modulation methods have not been comprehensively evaluated. In this thesis, the performances of different voltage-balancing algorithms and modulation methods are analyzed and evaluated. Based on the analysis, two improved voltage-balancing algorithms are proposed in this thesis.
For design of the MMC-based SST, existing references only focus on optimal design of medium-frequency transformer (MFT). In this thesis, an optimal design procedure is developed for the MMC under medium-frequency operation based on the mathematical model of the MMC-based SST. The design performance of MMC is comprehensively evaluated based on free system parameters.
For large-scale MMC-embedded power systems, it is required to investigate dynamic performance, fault characteristics, and stability. Modeling of the MMC is one of the challenges associated with the study of large-scale MMC-based power systems. The existing models of MMC did not consider the various configurations of SMs and different operating conditions. An improved equivalent circuit model is proposed in this thesis.
The solid state transformer (SST) has been investigated for the distribution systems to reduce the volume and weight of power transformer. Recently, the MMC is employed into the SST due to its salient features. For design and control of the MMC-based SST, its operational principles are comprehensively analyzed. Based on the analysis, its mathematical model is developed for evaluating steady-state performances. For optimal design of the MMC-based SST, the mathematical model is modified by considering circuit parameters.
One of the challenges of the MMC-based SST is the balancing of capacitor voltages. The performances of various voltage balancing algorithms and different modulation methods have not been comprehensively evaluated. In this thesis, the performances of different voltage-balancing algorithms and modulation methods are analyzed and evaluated. Based on the analysis, two improved voltage-balancing algorithms are proposed in this thesis.
For design of the MMC-based SST, existing references only focus on optimal design of medium-frequency transformer (MFT). In this thesis, an optimal design procedure is developed for the MMC under medium-frequency operation based on the mathematical model of the MMC-based SST. The design performance of MMC is comprehensively evaluated based on free system parameters.
ContributorsZhang, Lei (Author) / Qin, Jiangchao (Thesis advisor) / Ayyanar, Raja (Committee member) / Weng, Yang (Committee member) / Wu, Meng (Committee member) / Arizona State University (Publisher)
Created2020