Matching Items (134)
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- All Subjects: Electrical Engineering
- All Subjects: Computer Science
- Creators: Vasileska, Dragica
- Creators: Sen, Arunabha
Description
Solar energy, including solar heating, solar architecture, solar thermal electricity and solar photovoltaics, is one of the primary energy sources replacing fossil fuels. Being one of the most important techniques, significant research has been conducted in solar cell efficiency improvement. Simulation of various structures and materials of solar cells provides a deeper understanding of device operation and ways to improve their efficiency. Over the last two decades, polycrystalline thin-film Cadmium-Sulfide and Cadmium-Telluride (CdS/CdTe) solar cells fabricated on glass substrates have been considered as one of the most promising candidate in the photovoltaic technologies, for their similar efficiency and low costs when compared to traditional silicon-based solar cells. In this work a fast one dimensional time-dependent/steady-state drift-diffusion simulator, accelerated by adaptive non-uniform mesh and automatic time-step control, for modeling solar cells has been developed and has been used to simulate a CdS/CdTe solar cell. These models are used to reproduce transients of carrier transport in response to step-function signals of different bias and varied light intensity. The time-step control models are also used to help convergence in steady-state simulations where constrained material constants, such as carrier lifetimes in the order of nanosecond and carrier mobility in the order of 100 cm2/Vs, must be applied.
ContributorsGuo, Da (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen M (Committee member) / Sankin, Igor (Committee member) / Arizona State University (Publisher)
Created2013
Description
With the advent of social media (like Twitter, Facebook etc.,) people are easily sharing their opinions, sentiments and enforcing their ideologies on others like never before. Even people who are otherwise socially inactive would like to share their thoughts on current affairs by tweeting and sharing news feeds with their friends and acquaintances. In this thesis study, we chose Twitter as our main data platform to analyze shifts and movements of 27 political organizations in Indonesia. So far, we have collected over 30 million tweets and 150,000 news articles from RSS feeds of the corresponding organizations for our analysis. For Twitter data extraction, we developed a multi-threaded application which seamlessly extracts, cleans and stores millions of tweets matching our keywords from Twitter Streaming API. For keyword extraction, we used topics and perspectives which were extracted using n-grams techniques and later approved by our social scientists. After the data is extracted, we aggregate the tweet contents that belong to every user on a weekly basis. Finally, we applied linear and logistic regression using SLEP, an open source sparse learning package to compute weekly score for users and mapping them to one of the 27 organizations on a radical or counter radical scale. Since, we are mapping users to organizations on a weekly basis, we are able to track user's behavior and important new events that triggered shifts among users between organizations. This thesis study can further be extended to identify topics and organization specific influential users and new users from various social media platforms like Facebook, YouTube etc. can easily be mapped to existing organizations on a radical or counter-radical scale.
ContributorsPoornachandran, Sathishkumar (Author) / Davulcu, Hasan (Thesis advisor) / Sen, Arunabha (Committee member) / Woodward, Mark (Committee member) / Arizona State University (Publisher)
Created2013
Description
GaN high electron mobility transistors (HEMTs) based on the III-V nitride material system have been under extensive investigation because of their superb performance as high power RF devices. Two dimensional electron gas(2-DEG) with charge density ten times higher than that of GaAs-based HEMT and mobility much higher than Si enables a low on-resistance required for RF devices. Self-heating issues with GaN HEMT and lack of understanding of various phenomena are hindering their widespread commercial development. There is a need to understand device operation by developing a model which could be used to optimize electrical and thermal characteristics of GaN HEMT design for high power and high frequency operation. In this thesis work a physical simulation model of AlGaN/GaN HEMT is developed using commercially available software ATLAS from SILVACO Int. based on the energy balance/hydrodynamic carrier transport equations. The model is calibrated against experimental data. Transfer and output characteristics are the key focus in the analysis along with saturation drain current. The resultant IV curves showed a close correspondence with experimental results. Various combinations of electron mobility, velocity saturation, momentum and energy relaxation times and gate work functions were attempted to improve IV curve correlation. Thermal effects were also investigated to get a better understanding on the role of self-heating effects on the electrical characteristics of GaN HEMTs. The temperature profiles across the device were observed. Hot spots were found along the channel in the gate-drain spacing. These preliminary results indicate that the thermal effects do have an impact on the electrical device characteristics at large biases even though the amount of self-heating is underestimated with respect to thermal particle-based simulations that solve the energy balance equations for acoustic and optical phonons as well (thus take proper account of the formation of the hot-spot). The decrease in drain current is due to decrease in saturation carrier velocity. The necessity of including hydrodynamic/energy balance transport models for accurate simulations is demonstrated. Possible ways for improving model accuracy are discussed in conjunction with future research.
ContributorsChowdhury, Towhid (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
Since its inception about three decades ago, silicon on insulator (SOI) technology has come a long way to be included in the microelectronics roadmap. Earlier, scientists and engineers focused on ways to increase the microprocessor clock frequency and speed. Today, with smart phones and tablets gaining popularity, power consumption has become a major factor. In this thesis, self-heating effects in a 25nm fully depleted (FD) SOI device are studied by implementing a 2-D particle based device simulator coupled self-consistently with the energy balance equations for both acoustic and optical phonons. Semi-analytical expressions for acoustic and optical phonon scattering rates (all modes) are derived and evaluated using quadratic dispersion relationships. Moreover, probability distribution functions for the final polar angle after scattering is also computed and the rejection technique is implemented for its selection. Since the temperature profile varies throughout the device, temperature dependent scattering tables are used for the electron transport kernel. The phonon energy balance equations are also modified to account for inelasticity in acoustic phonon scattering for all branches. Results obtained from this simulation help in understanding self-heating and the effects it has on the device characteristics. The temperature profiles in the device show a decreasing trend which can be attributed to the inelastic interaction between the electrons and the acoustic phonons. This is further proven by comparing the temperature plots with the simulation results that assume the elastic and equipartition approximation for acoustic and the Einstein model for optical phonons. Thus, acoustic phonon inelasticity and the quadratic phonon dispersion relationships play a crucial role in studying self-heating effects.
ContributorsGada, Manan Laxmichand (Author) / Vasileska, Dragica (Thesis advisor) / Ferry, David K. (Committee member) / Goodnick, Stephen M (Committee member) / Arizona State University (Publisher)
Created2013
Description
The pay-as-you-go economic model of cloud computing increases the visibility, traceability, and verifiability of software costs. Application developers must understand how their software uses resources when running in the cloud in order to stay within budgeted costs and/or produce expected profits. Cloud computing's unique economic model also leads naturally to an earn-as-you-go profit model for many cloud based applications. These applications can benefit from low level analyses for cost optimization and verification. Testing cloud applications to ensure they meet monetary cost objectives has not been well explored in the current literature. When considering revenues and costs for cloud applications, the resource economic model can be scaled down to the transaction level in order to associate source code with costs incurred while running in the cloud. Both static and dynamic analysis techniques can be developed and applied to understand how and where cloud applications incur costs. Such analyses can help optimize (i.e. minimize) costs and verify that they stay within expected tolerances. An adaptation of Worst Case Execution Time (WCET) analysis is presented here to statically determine worst case monetary costs of cloud applications. This analysis is used to produce an algorithm for determining control flow paths within an application that can exceed a given cost threshold. The corresponding results are used to identify path sections that contribute most to cost excess. A hybrid approach for determining cost excesses is also presented that is comprised mostly of dynamic measurements but that also incorporates calculations that are based on the static analysis approach. This approach uses operational profiles to increase the precision and usefulness of the calculations.
ContributorsBuell, Kevin, Ph.D (Author) / Collofello, James (Thesis advisor) / Davulcu, Hasan (Committee member) / Lindquist, Timothy (Committee member) / Sen, Arunabha (Committee member) / Arizona State University (Publisher)
Created2012
Description
This work is focused on modeling the reliability concerns in GaN HEMT technology. The two main reliability concerns in GaN HEMTs are electromechanical coupling and current collapse. A theoretical model was developed to model the piezoelectric polarization charge dependence on the applied gate voltage. As the sheet electron density in the channel increases, the influence of electromechanical coupling reduces as the electric field in the comprising layers reduces. A Monte Carlo device simulator that implements the theoretical model was developed to model the transport in GaN HEMTs. It is observed that with the coupled formulation, the drain current degradation in the device varies from 2%-18% depending on the gate voltage. Degradation reduces with the increase in the gate voltage due to the increase in the electron gas density in the channel. The output and transfer characteristics match very well with the experimental data. An electro-thermal device simulator was developed coupling the Monte Caro-Poisson solver with the energy balance solver for acoustic and optical phonons. An output current degradation of around 2-3 % at a drain voltage of 5V due to self-heating was observed. It was also observed that the electrostatics near the gate to drain region of the device changes due to the hot spot created in the device from self heating. This produces an electric field in the direction of accelerating the electrons from the channel to surface states. This will aid to the current collapse phenomenon in the device. Thus, the electric field in the gate to drain region is very critical for reliable performance of the device. Simulations emulating the charging of the surface states were also performed and matched well with experimental data. Methods to improve the reliability performance of the device were also investigated in this work. A shield electrode biased at source potential was used to reduce the electric field in the gate to drain extension region. The hot spot position was moved away from the critical gate to drain region towards the drain as the shield electrode length and dielectric thickness were being altered.
ContributorsPadmanabhan, Balaji (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen M (Committee member) / Alford, Terry L. (Committee member) / Venkatraman, Prasad (Committee member) / Arizona State University (Publisher)
Created2013
Description
Communication networks, both wired and wireless, are expected to have a certain level of fault-tolerance capability.These networks are also expected to ensure a graceful degradation in performance when some of the network components fail. Traditional studies on fault tolerance in communication networks, for the most part, make no assumptions regarding the location of node/link faults, i.e., the faulty nodes and links may be close to each other or far from each other. However, in many real life scenarios, there exists a strong spatial correlation among the faulty nodes and links. Such failures are often encountered in disaster situations, e.g., natural calamities or enemy attacks. In presence of such region-based faults, many of traditional network analysis and fault-tolerant metrics, that are valid under non-spatially correlated faults, are no longer applicable. To this effect, the main thrust of this research is design and analysis of robust networks in presence of such region-based faults. One important finding of this research is that if some prior knowledge is available on the maximum size of the region that might be affected due to a region-based fault, this piece of knowledge can be effectively utilized for resource efficient design of networks. It has been shown in this dissertation that in some scenarios, effective utilization of this knowledge may result in substantial saving is transmission power in wireless networks. In this dissertation, the impact of region-based faults on the connectivity of wireless networks has been studied and a new metric, region-based connectivity, is proposed to measure the fault-tolerance capability of a network. In addition, novel metrics, such as the region-based component decomposition number(RBCDN) and region-based largest component size(RBLCS) have been proposed to capture the network state, when a region-based fault disconnects the network. Finally, this dissertation presents efficient resource allocation techniques that ensure tolerance against region-based faults, in distributed file storage networks and data center networks.
ContributorsBanerjee, Sujogya (Author) / Sen, Arunabha (Thesis advisor) / Xue, Guoliang (Committee member) / Richa, Andrea (Committee member) / Hurlbert, Glenn (Committee member) / Arizona State University (Publisher)
Created2013
Description
Data mining is increasing in importance in solving a variety of industry problems. Our initiative involves the estimation of resource requirements by skill set for future projects by mining and analyzing actual resource consumption data from past projects in the semiconductor industry. To achieve this goal we face difficulties like data with relevant consumption information but stored in different format and insufficient data about project attributes to interpret consumption data. Our first goal is to clean the historical data and organize it into meaningful structures for analysis. Once the preprocessing on data is completed, different data mining techniques like clustering is applied to find projects which involve resources of similar skillsets and which involve similar complexities and size. This results in "resource utilization templates" for groups of related projects from a resource consumption perspective. Then project characteristics are identified which generate this diversity in headcounts and skillsets. These characteristics are not currently contained in the data base and are elicited from the managers of historical projects. This represents an opportunity to improve the usefulness of the data collection system for the future. The ultimate goal is to match the product technical features with the resource requirement for projects in the past as a model to forecast resource requirements by skill set for future projects. The forecasting model is developed using linear regression with cross validation of the training data as the past project execution are relatively few in number. Acceptable levels of forecast accuracy are achieved relative to human experts' results and the tool is applied to forecast some future projects' resource demand.
ContributorsBhattacharya, Indrani (Author) / Sen, Arunabha (Thesis advisor) / Kempf, Karl G. (Thesis advisor) / Liu, Huan (Committee member) / Arizona State University (Publisher)
Created2013
Description
ABSTRACT This work seeks to develop a practical solution for short range ultrasonic communications and produce an integrated array of acoustic transmitters on a flexible substrate. This is done using flexible thin film transistor (TFT) and micro electromechanical systems (MEMS). The goal is to develop a flexible system capable of communicating in the ultrasonic frequency range at a distance of 10 - 100 meters. This requires a great deal of innovation on the part of the FDC team developing the TFT driving circuitry and the MEMS team adapting the technology for fabrication on a flexible substrate. The technologies required for this research are independently developed. The TFT development is driven primarily by research into flexible displays. The MEMS development is driving by research in biosensors and micro actuators. This project involves the integration of TFT flexible circuit capabilities with MEMS micro actuators in the novel area of flexible acoustic transmitter arrays. This thesis focuses on the design, testing and analysis of the circuit components required for this project.
ContributorsDaugherty, Robin (Author) / Allee, David R. (Thesis advisor) / Chae, Junseok (Thesis advisor) / Aberle, James T (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2012
Description
The goal of this research work is to develop a particle-based device simulator for modeling strained silicon devices. Two separate modules had to be developed for that purpose: A generic bulk Monte Carlo simulation code which in the long-time limit solves the Boltzmann transport equation for electrons; and an extension to this code that solves for the bulk properties of strained silicon. One scattering table is needed for conventional silicon, whereas, because of the strain breaking the symmetry of the system, three scattering tables are needed for modeling strained silicon material. Simulation results for the average drift velocity and the average electron energy are in close agreement with published data. A Monte Carlo device simulation tool has also been employed to integrate the effects of self-heating into device simulation for Silicon on Insulator devices. The effects of different types of materials for buried oxide layers have been studied. Sapphire, Aluminum Nitride (AlN), Silicon dioxide (SiO2) and Diamond have been used as target materials of interest in the analysis and the effects of varying insulator layer thickness have also been investigated. It was observed that although AlN exhibits the best isothermal behavior, diamond is the best choice when thermal effects are accounted for.
ContributorsQazi, Suleman (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen (Committee member) / Tao, Meng (Committee member) / Arizona State University (Publisher)
Created2013