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ContributorsPilafian, Sam (Director) / Goodrich, Andrew (Director) / Jazz Repertory Band (Performer) / ASU Library. Music Library (Publisher)
Created2001-11-19
ContributorsBebop Ensemble (Performer) / ASU Library. Music Library (Publisher)
Created1992-09-30
ContributorsJazz Combo (Performer) / ASU Library. Music Library (Publisher)
Created2003-11-12
ContributorsMarohnic, Charles (Director) / Adam, Greg (Performer) / Koller, Jacob (Performer) / Jones, Andy (Performer) / O'Reilly, John (Performer) / Gross, Andrew (Performer) / Combo #7 (Performer) / ASU Library. Music Library (Publisher)
Created1998-02-11
Description
Engineering, and more specifically, electrical engineering can be a difficult topic to explain through spoken communication. Along with taking years of education to learn and understand necessary topics, the field is riddled with jargon and items that may take lectures to explain. However, this type of education may not be feasible for a younger or inexperienced audience. Therefore, engineers must find new ways to explain such difficult topics, especially in an attempt to garner interest in children, for example, through art.
ContributorsHedges, Madison (Author) / Aukes, Daniel (Thesis director) / Weeks, Eric (Committee member) / Barrett, The Honors College (Contributor) / Engineering Programs (Contributor) / School of Earth and Space Exploration (Contributor)
Created2023-12
Description
This research explores the potential use of microwave energy to detect various substances in water, with a focus on water quality assessment and pathogen detection applications. There are many non-thermal effects of microwaves on microorganisms and their resonant frequencies could be used to identify and possibly destroy harmful pathogens, such as bacteria and viruses, without heating the water. A wide range of materials, including living organisms like Daphnia and Moina, plants, sand, plastic, and salt, were subjected to microwave measurements to assess their influence on the transmission (S21) measurements. The measurements of the living organisms did not display distinctive resonant frequencies and variations in water volume may be the source of the small measurement differences. Conversely, sand and plastic pellets affected the measurements differently, with their arrangement within the test tube emerging as a significant factor. This study also explores the impact of salinity on measurements, revealing a clear pattern that can be modeled as a series RLC resonator. Although unique resonant frequencies for the tested organisms were not identified, the presented system demonstrates the potential for detecting contaminants based on variations in measurements. Future research may extend this work to include a broader array of organisms and enhance measurement precision.
ContributorsChild, Carson (Author) / Aberle, James (Thesis director) / Blain Christen, Jennifer (Committee member) / Barrett, The Honors College (Contributor) / Electrical Engineering Program (Contributor)
Created2023-12
Description
Digital signal processing accelerator architectures are designed to provide either high-energy efficiency or high programmability depending on the targeted application and use case. For example, Domain Adaptive Processor (DAP), a highly reconfigurable array architecture, designed by University of Michigan, for signal processing workloads is highly energy efficient but difficult to program. DAP consists of 8x8 array of Processing elements (PE) with each PE containing four heterogeneous SUB-PEs. Each SUB-PE has its own instruction memory and is capable of executing Very Large Instruction Word (VLIW) instructions. Unfortunately, instructions have to be written for every cycle of computation for each SUB-PE used in the application and handcrafted such that all the inter-PE dependencies are synchronized. This thesis builds up on prior work at Arizona State University(ASU) to make DAP more programmable. First, the compiler back-end developed at ASU is extended with more features. Prior work introduced DAP Instruction Set Architecture (ISA), an assembly instruction format, and proposed a compiler framework, called DAP Assembler, with optimization passes to reduce the complexity of programming applications in DAP. While this back-end infrastructure helped generated code with relative ease compared to Very Large Instruction Word (VLIW) code by hand, the output of the code generated was not software-pipelined and the code generated for each Processing Element(PE) had to be manually synchronized. So in this thesis, DAP Assembler tool is extended to support software-pipelining for high throughput applications. Further, a generic synchronization tool is proposed to synchronize instructions in a multi-PE setup and integrated with DAP Assembler to generate synchronized high-throughput application code. Second, a Multi-Level Intermediate Representation(MLIR) based compiler front-end infrastructure is proposed to first lower the application code written by the programmer to an Intermediate Representation (IR) that is suitable for generic array architectures and then further converted to DAP-specific IR that can be used for generating machine code for DAP using DAP ISA. This two stage process enables this infrastructure to be more easily adapted to other array architectures. The first conversion pass uses a designer-provided modular hardware architecture information, called Resource Registry, to allocate operations in the input IR to resources in the Resource registry and capture all data movement. While the resource registry changes from architecture to architecture, the conversion pass algorithm is generic and can be used for other architectures. The second conversion pass is more geared towards DAP and integrates DAP specific constructs to generate optimized instruction in DAP ISA. Multiple kernels such as matrix multiplication, vector-vector addition were implemented using this infrastructure and the code generated by the tool verified to be functionally correct.
ContributorsMurugan, Narayanan (Author) / Chakrabarti, Chaitali Dr (Thesis advisor) / Akoglu, Ali Dr (Committee member) / Bliss, Daniel Dr (Committee member) / Arizona State University (Publisher)
Created2023
Description
Kuwait is committed to implementing the Kyoto Protocol in “Vision 2035” to reduce greenhouse gas emissions by shifting to the use of wind and solar energies [1]. The specific goal of the Vision 2035 is for renewables to comprise 15% of Kuwait’s electrical generation by 2030. Wind and solar are abundant in Kuwait and can easily provide 15% of the total electrical generation. However, there are three significant obstacles. The first is Kuwait currently depends heavily on rapidly diminishing fossil fuels which are the major sources of CO2, NOx, and SOx emissions. Unfortunately, current plans are to build two conventional power stations by 2024. The purpose is to cover the energy needs for growing population. The second problem is that Kuwait has a very small land area. Consequently, there is limited space to build new utility-scale renewable power stations. The third issue is the low electricity tariff provides little incentive for the population to save energy. Offshore wind farms have the potential to provide thousands of GWh/yr to accomplish the goals of Vision 2035. Kuwait has a vast untapped supply of offshore wind energy. Specifically, there are eight offshore locations in which 50 turbines could be built each, for a total of 400 turbines. Using 4.2 MW turbines, this would provide 1.68 GW of wind energy, and increase the renewable portion of the electrical energy production to 13.93% (including Shagaya renewable park). Installing battery storage with the proposed wind turbines could provide fast ramp response which would serve to complement existing power production on Kuwait’s grid. In this work, six different turbines with different sizes are considered from 2.5 MW to 4.2 MW (from well-known manufacturers, such as, Nordex and Vestas), but ultimately 4.2 MW turbines are recommended. Data for this study has been supplied by: A) Civil Aviation -- temperature and wind speed, B) Ministry of Electricity and Water (MEW) -- electricity data, and C) Public Authority for Civil Information -- population data.
ContributorsAlotaibi, Abdullah Saqer (Author) / Calhoun, Ronald (Thesis advisor) / Kitchen, Jennifer (Thesis advisor) / Roedel, Ronald (Committee member) / Mayyas, Abdul Ra'ouf (Committee member) / Arizona State University (Publisher)
Created2020
Description
In this dissertation, I investigate the electronic properties of two important silicon(Si)-based heterojunctions 1) hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) which has already been commercialized in Heterojunction with Intrinsic Thin-layer (HIT) cells and 2) gallium phosphide/silicon (GaP/Si) which has been suggested to be a good candidate for replacing a-Si:H/c-Si in HIT cells in order to boost the HIT cell’s efficiency.
In the first part, the defect states of amorphous silicon (a-Si) and a-Si:H material are studied using density functional theory (DFT). I first employ simulated annealing using molecular dynamics (MD) to create stable configurations of a-Si:H, and then analyze the atomic and electronic structure to investigate which structural defects interact with H, and how the electronic structure changes with H addition. I find that H atoms decrease the density of mid-gap states and increase the band gap of a-Si by binding to Si atoms with strained bonds. My results also indicate that Si atoms with strained bonds creates high-localized orbitals in the mobility gap of a-Si, and the binding of H atoms to them can dramatically decrease their degree of localization.
In the second part, I explore the effect of the H binding configuration on the electronic properties of a-Si:H/c-Si heterostructure using density functional theory studies of models of the interface between a-Si:H and c-Si. The electronic properties from DFT show that depending on the energy difference between configurations, the electronic properties are sensitive to the H binding configurations.
In the last part, I examine the electronic structure of GaP/Si(001) heterojunctions and the effect of hydrogen H passivation at the interface in comparison to interface mixing, through DFT calculations. My calculations show that due to the heterovalent mismatch nature of the GaP/Si interface, there is a high density of localized states at the abrupt GaP/Si interface due to the excess charge associated with heterovalent bonding, as reported elsewhere. I find that the addition of H leads to additional bonding at the interface which mitigates the charge imbalance, and greatly reduces the density of localized states, leading to a nearly ideal heterojunction.
In the first part, the defect states of amorphous silicon (a-Si) and a-Si:H material are studied using density functional theory (DFT). I first employ simulated annealing using molecular dynamics (MD) to create stable configurations of a-Si:H, and then analyze the atomic and electronic structure to investigate which structural defects interact with H, and how the electronic structure changes with H addition. I find that H atoms decrease the density of mid-gap states and increase the band gap of a-Si by binding to Si atoms with strained bonds. My results also indicate that Si atoms with strained bonds creates high-localized orbitals in the mobility gap of a-Si, and the binding of H atoms to them can dramatically decrease their degree of localization.
In the second part, I explore the effect of the H binding configuration on the electronic properties of a-Si:H/c-Si heterostructure using density functional theory studies of models of the interface between a-Si:H and c-Si. The electronic properties from DFT show that depending on the energy difference between configurations, the electronic properties are sensitive to the H binding configurations.
In the last part, I examine the electronic structure of GaP/Si(001) heterojunctions and the effect of hydrogen H passivation at the interface in comparison to interface mixing, through DFT calculations. My calculations show that due to the heterovalent mismatch nature of the GaP/Si interface, there is a high density of localized states at the abrupt GaP/Si interface due to the excess charge associated with heterovalent bonding, as reported elsewhere. I find that the addition of H leads to additional bonding at the interface which mitigates the charge imbalance, and greatly reduces the density of localized states, leading to a nearly ideal heterojunction.
ContributorsVatan Meidanshahi, Reza (Author) / Goodnick, Stephen Marshall (Thesis advisor) / Vasileska, Dragica (Committee member) / Bowden, Stuart (Committee member) / Honsberg, Christiana (Committee member) / Arizona State University (Publisher)
Created2019
Description
Over the past few years, research into the use of doped diamond in electronics has seen an exponential growth. In the course of finding ways to reduce the contact resistivity, nanocarbon materials have been an interesting focus. In this work, the transfer length method (TLM) was used to investigate Ohmic contact properties using the tri-layer stack Ti/Pt/Au on nitrogen-doped n-type conducting nano-carbon (nanoC) layers grown on (100) diamond substrates. The nanocarbon material was characterized using Secondary Ion Mass Spectrometry (SIMS), Scanning electron Microscopy (SEM) X-ray diffraction (XRD), Raman scattering and Hall effect measurements to probe the materials characteristics. Room temperature electrical measurements were taken, and samples were annealed to observe changes in electrical conductivity. Low specific contact resistivity values of 8 x 10^-5 Ωcm^2 were achieved, which was almost two orders of magnitude lower than previously reported values. The results were attributed to the increased nitrogen incorporation, and the presence of electrically active defects which leads to an increase in conduction in the nanocarbon. Further a study of light phosphorus doped layers using similar methods with Ti/Pt/Au contacts again yielded a low contact resistivity of about 9.88 x 10^-2 Ωcm^2 which is an interesting prospect among lightly doped diamond films for applications in devices such as transistors. In addition, for the first time, hafnium was substituted for Ti in the contact stack (Hf/Pt/Au) and studied on nitrogen doped nanocarbon films, which resulted in low contact resistivity values on the order of 10^-2 Ωcm^2. The implications of the results were discussed, and recommendations for improving the experimental process was outlined. Lastly, a method for the selective area growth of nanocarbon was developed and studied and the results provided an insight into how different characterizations can be used to confirm the presence of the nanocrystalline diamond material, the limitations due to the film thickness was explored and ideas for future work was proposed.
ContributorsAmonoo, Evangeline Abena (Author) / Thornton, Trevor (Thesis advisor) / Alford, Terry L (Thesis advisor) / Anwar, Shahriar (Committee member) / Theodore, David (Committee member) / Arizona State University (Publisher)
Created2023