Matching Items (35)
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- All Subjects: Electrical Engineering
- Genre: Masters Thesis
- Creators: Vasileska, Dragica
Description
Solar energy, including solar heating, solar architecture, solar thermal electricity and solar photovoltaics, is one of the primary energy sources replacing fossil fuels. Being one of the most important techniques, significant research has been conducted in solar cell efficiency improvement. Simulation of various structures and materials of solar cells provides a deeper understanding of device operation and ways to improve their efficiency. Over the last two decades, polycrystalline thin-film Cadmium-Sulfide and Cadmium-Telluride (CdS/CdTe) solar cells fabricated on glass substrates have been considered as one of the most promising candidate in the photovoltaic technologies, for their similar efficiency and low costs when compared to traditional silicon-based solar cells. In this work a fast one dimensional time-dependent/steady-state drift-diffusion simulator, accelerated by adaptive non-uniform mesh and automatic time-step control, for modeling solar cells has been developed and has been used to simulate a CdS/CdTe solar cell. These models are used to reproduce transients of carrier transport in response to step-function signals of different bias and varied light intensity. The time-step control models are also used to help convergence in steady-state simulations where constrained material constants, such as carrier lifetimes in the order of nanosecond and carrier mobility in the order of 100 cm2/Vs, must be applied.
ContributorsGuo, Da (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen M (Committee member) / Sankin, Igor (Committee member) / Arizona State University (Publisher)
Created2013
Description
The subject of this thesis is distribution level load management using a pricing signal in a Smart Grid infrastructure. The Smart Grid implements advanced meters, sensory devices and near real time communication between the elements of the system, including the distribution operator and the customer. A stated objective of the Smart Grid is to use sensory information to operate the electrical power grid more efficiently and cost effectively. One potential function of the Smart Grid is energy management at the distribution level, namely at the individual customer. The Smart Grid allows control of distribution level devices, including distributed energy storage and distributed generation, in operational real time. One method of load control uses an electric energy price as a control signal. The control is achieved through customer preference as the customer allows loads to respond to a dynamic pricing signal. In this thesis, a pricing signal is used to control loads for energy management at the distribution level. The model for the energy management system is created and analyzed in the z-domain due to the envisioned discrete time implementation. Test cases are used to illustrate stability and performance by analytic calculations using Mathcad and by simulation using Matlab Simulink. The envisioned control strategy is applied to the Future Renewable Electric Energy Distribution Management (FREEDM) system. The FREEDM system implements electronic (semiconductor) controls and therefore makes the proposed energy management feasible. The pricing control strategy is demonstrated to be an effective method of performing energy management in a distribution system. It is also shown that stability and near optimal response can be achieved by controlling the parameters of the system. Addition-ally, the communication bandwidth requirements for a pricing control signal are evaluated.
ContributorsBoyd, Jesse (Author) / Heydt, Gerald T (Thesis advisor) / Datta, Rajib (Committee member) / Sankar, Lalitha (Committee member) / Arizona State University (Publisher)
Created2013
Description
Due to great challenges from aggressive environmental regulations, increased demand due to new technologies and the integration of renewable energy sources, the energy industry may radically change the way the power system is operated and designed. With the motivation of studying and planning the future power system under these new challenges, the development of the new tools is required. A network equivalent that can be used in such planning tools needs to be generated based on an accurate power flow model and an equivalencing procedure that preserves the key characteristics of the original system. Considering the pervasive use of the dc power flow models, their accuracy is of great concern. The industry seems to be sanguine about the performance of dc power flow models, but recent research has shown that the performance of different formulations is highly variable. In this thesis, several dc power-flow models are analyzed theoretically and evaluated numerically in IEEE 118-bus system and Eastern Interconnection 62,000-bus system. As shown in the numerical example, the alpha-matching dc power flow model performs best in matching the original ac power flow solution. Also, the possibility of applying these dc models in the various applications has been explored and demonstrated. Furthermore, a novel hot-start optimal dc power-flow model based on ac power transfer distribution factors (PTDFs) is proposed, implemented and tested. This optimal-reactance-only dc model not only matches the original ac PF solution well, but also preserves the congestion pattern obtain from the OPF results of the original ac model. Three improved strategies were proposed for applying the bus-aggregation technique to the large-scale systems, like EI and ERCOT, to improve the execution time, and memory requirements when building a reduced equivalent model. Speed improvements of up to a factor of 200 were observed.
ContributorsQi, Yingying (Author) / Tylavsky, Daniel J (Thesis advisor) / Hedman, Kory W (Committee member) / Sankar, Lalitha (Committee member) / Arizona State University (Publisher)
Created2013
Description
GaN high electron mobility transistors (HEMTs) based on the III-V nitride material system have been under extensive investigation because of their superb performance as high power RF devices. Two dimensional electron gas(2-DEG) with charge density ten times higher than that of GaAs-based HEMT and mobility much higher than Si enables a low on-resistance required for RF devices. Self-heating issues with GaN HEMT and lack of understanding of various phenomena are hindering their widespread commercial development. There is a need to understand device operation by developing a model which could be used to optimize electrical and thermal characteristics of GaN HEMT design for high power and high frequency operation. In this thesis work a physical simulation model of AlGaN/GaN HEMT is developed using commercially available software ATLAS from SILVACO Int. based on the energy balance/hydrodynamic carrier transport equations. The model is calibrated against experimental data. Transfer and output characteristics are the key focus in the analysis along with saturation drain current. The resultant IV curves showed a close correspondence with experimental results. Various combinations of electron mobility, velocity saturation, momentum and energy relaxation times and gate work functions were attempted to improve IV curve correlation. Thermal effects were also investigated to get a better understanding on the role of self-heating effects on the electrical characteristics of GaN HEMTs. The temperature profiles across the device were observed. Hot spots were found along the channel in the gate-drain spacing. These preliminary results indicate that the thermal effects do have an impact on the electrical device characteristics at large biases even though the amount of self-heating is underestimated with respect to thermal particle-based simulations that solve the energy balance equations for acoustic and optical phonons as well (thus take proper account of the formation of the hot-spot). The decrease in drain current is due to decrease in saturation carrier velocity. The necessity of including hydrodynamic/energy balance transport models for accurate simulations is demonstrated. Possible ways for improving model accuracy are discussed in conjunction with future research.
ContributorsChowdhury, Towhid (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
Since its inception about three decades ago, silicon on insulator (SOI) technology has come a long way to be included in the microelectronics roadmap. Earlier, scientists and engineers focused on ways to increase the microprocessor clock frequency and speed. Today, with smart phones and tablets gaining popularity, power consumption has become a major factor. In this thesis, self-heating effects in a 25nm fully depleted (FD) SOI device are studied by implementing a 2-D particle based device simulator coupled self-consistently with the energy balance equations for both acoustic and optical phonons. Semi-analytical expressions for acoustic and optical phonon scattering rates (all modes) are derived and evaluated using quadratic dispersion relationships. Moreover, probability distribution functions for the final polar angle after scattering is also computed and the rejection technique is implemented for its selection. Since the temperature profile varies throughout the device, temperature dependent scattering tables are used for the electron transport kernel. The phonon energy balance equations are also modified to account for inelasticity in acoustic phonon scattering for all branches. Results obtained from this simulation help in understanding self-heating and the effects it has on the device characteristics. The temperature profiles in the device show a decreasing trend which can be attributed to the inelastic interaction between the electrons and the acoustic phonons. This is further proven by comparing the temperature plots with the simulation results that assume the elastic and equipartition approximation for acoustic and the Einstein model for optical phonons. Thus, acoustic phonon inelasticity and the quadratic phonon dispersion relationships play a crucial role in studying self-heating effects.
ContributorsGada, Manan Laxmichand (Author) / Vasileska, Dragica (Thesis advisor) / Ferry, David K. (Committee member) / Goodnick, Stephen M (Committee member) / Arizona State University (Publisher)
Created2013
Description
ABSTRACT This work seeks to develop a practical solution for short range ultrasonic communications and produce an integrated array of acoustic transmitters on a flexible substrate. This is done using flexible thin film transistor (TFT) and micro electromechanical systems (MEMS). The goal is to develop a flexible system capable of communicating in the ultrasonic frequency range at a distance of 10 - 100 meters. This requires a great deal of innovation on the part of the FDC team developing the TFT driving circuitry and the MEMS team adapting the technology for fabrication on a flexible substrate. The technologies required for this research are independently developed. The TFT development is driven primarily by research into flexible displays. The MEMS development is driving by research in biosensors and micro actuators. This project involves the integration of TFT flexible circuit capabilities with MEMS micro actuators in the novel area of flexible acoustic transmitter arrays. This thesis focuses on the design, testing and analysis of the circuit components required for this project.
ContributorsDaugherty, Robin (Author) / Allee, David R. (Thesis advisor) / Chae, Junseok (Thesis advisor) / Aberle, James T (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2012
Description
The goal of this research work is to develop a particle-based device simulator for modeling strained silicon devices. Two separate modules had to be developed for that purpose: A generic bulk Monte Carlo simulation code which in the long-time limit solves the Boltzmann transport equation for electrons; and an extension to this code that solves for the bulk properties of strained silicon. One scattering table is needed for conventional silicon, whereas, because of the strain breaking the symmetry of the system, three scattering tables are needed for modeling strained silicon material. Simulation results for the average drift velocity and the average electron energy are in close agreement with published data. A Monte Carlo device simulation tool has also been employed to integrate the effects of self-heating into device simulation for Silicon on Insulator devices. The effects of different types of materials for buried oxide layers have been studied. Sapphire, Aluminum Nitride (AlN), Silicon dioxide (SiO2) and Diamond have been used as target materials of interest in the analysis and the effects of varying insulator layer thickness have also been investigated. It was observed that although AlN exhibits the best isothermal behavior, diamond is the best choice when thermal effects are accounted for.
ContributorsQazi, Suleman (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen (Committee member) / Tao, Meng (Committee member) / Arizona State University (Publisher)
Created2013
Description
Renewable portfolio standards prescribe for penetration of high amounts of re-newable energy sources (RES) that may change the structure of existing power systems. The load growth and changes in power flow caused by RES integration may result in re-quirements of new available transmission capabilities and upgrades of existing transmis-sion paths. Construction difficulties of new transmission lines can become a problem in certain locations. The increase of transmission line thermal ratings by reconductoring using High Temperature Low Sag (HTLS) conductors is a comparatively new technology introduced to transmission expansion. A special design permits HTLS conductors to operate at high temperatures (e.g., 200oC), thereby allowing passage of higher current. The higher temperature capability increases the steady state and emergency thermal ratings of the transmission line. The main disadvantage of HTLS technology is high cost. The high cost may place special emphasis on a thorough analysis of cost to benefit of HTLS technology im-plementation. Increased transmission losses in HTLS conductors due to higher current may be a disadvantage that can reduce the attractiveness of this method. Studies described in this thesis evaluate the expenditures for transmission line re-conductoring using HTLS and the consequent benefits obtained from the potential decrease in operating cost for thermally limited transmission systems. Studies performed consider the load growth and penetration of distributed renewable energy sources according to the renewable portfolio standards for power systems. An evaluation of payback period is suggested to assess the cost to benefit ratio of HTLS upgrades. The thesis also considers the probabilistic nature of transmission upgrades. The well-known Chebyshev inequality is discussed with an application to transmission up-grades. The Chebyshev inequality is proposed to calculate minimum payback period ob-tained from the upgrades of certain transmission lines. The cost to benefit evaluation of HTLS upgrades is performed using a 225 bus equivalent of the 2012 summer peak Arizona portion of the Western Electricity Coordi-nating Council (WECC).
ContributorsTokombayev, Askhat (Author) / Heydt, Gerald T. (Thesis advisor) / Sankar, Lalitha (Committee member) / Karady, George G. (Committee member) / Arizona State University (Publisher)
Created2014
Description
This thesis focuses on developing an integrated transmission and distribution framework that couples the two sub-systems together with due consideration to conventional demand flexibility. The proposed framework ensures accurate representation of the system resources and the network conditions when modeling the distribution system in the transmission OPF and vice-versa. It is further used to develop an accurate pricing mechanism (Distribution-based Location Marginal Pricing), which is reflective of the moment-to-moment costs of generating and delivering electrical energy, for the distribution system. By accurately modeling the two sub-systems, we can improve the economic efficiency and the system reliability, as the price sensitive resources can be controlled to behave in a way that benefits the power system as a whole.
ContributorsSinghal, Nikita G (Author) / Hedman, Kory W (Thesis advisor) / Tylavsky, Daniel J (Committee member) / Sankar, Lalitha (Committee member) / Arizona State University (Publisher)
Created2014
Description
Nonvolatile memory (NVM) technologies have been an integral part of electronic systems for the past 30 years. The ideal non-volatile memory have minimal physical size, energy usage, and cost while having maximal speed, capacity, retention time, and radiation hardness. A promising candidate for next-generation memory is ion-conducting bridging RAM which is referred to as programmable metallization cell (PMC), conductive bridge RAM (CBRAM), or electrochemical metallization memory (ECM), which is likely to surpass flash memory in all the ideal memory characteristics. A comprehensive physics-based model is needed to completely understand PMC operation and assist in design optimization.
To advance the PMC modeling effort, this thesis presents a precise physical model parameterizing materials associated with both ion-rich and ion-poor layers of the PMC's solid electrolyte, so that captures the static electrical behavior of the PMC in both its low-resistance on-state (LRS) and high resistance off-state (HRS). The experimental data is measured from a chalcogenide glass PMC designed and manufactured at ASU. The static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film is characterized and modeled using three dimensional simulation code written in Silvaco Atlas finite element analysis software. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities.
The sensitivity of our modeled PMC to the variation of its prominent achieved material parameters is examined on the HRS and LRS impedance behavior.
The obtained accurate set of material parameters for both Ag-rich and Ag-poor ChG systems and process variation verification on electrical characteristics enables greater fidelity in PMC device simulation, which significantly enhances our ability to understand the underlying physics of ChG-based resistive switching memory.
To advance the PMC modeling effort, this thesis presents a precise physical model parameterizing materials associated with both ion-rich and ion-poor layers of the PMC's solid electrolyte, so that captures the static electrical behavior of the PMC in both its low-resistance on-state (LRS) and high resistance off-state (HRS). The experimental data is measured from a chalcogenide glass PMC designed and manufactured at ASU. The static on- and off-state resistance of a PMC device composed of a layered (Ag-rich/Ag-poor) Ge30Se70 ChG film is characterized and modeled using three dimensional simulation code written in Silvaco Atlas finite element analysis software. Calibrating the model to experimental data enables the extraction of device parameters such as material bandgaps, workfunctions, density of states, carrier mobilities, dielectric constants, and affinities.
The sensitivity of our modeled PMC to the variation of its prominent achieved material parameters is examined on the HRS and LRS impedance behavior.
The obtained accurate set of material parameters for both Ag-rich and Ag-poor ChG systems and process variation verification on electrical characteristics enables greater fidelity in PMC device simulation, which significantly enhances our ability to understand the underlying physics of ChG-based resistive switching memory.
ContributorsRajabi, Saba (Author) / Barnaby, Hugh (Thesis advisor) / Kozicki, Michael (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2014