Matching Items (2,455)
Filtering by
- All Subjects: Electrical Engineering
- All Subjects: Violin and piano music
- All Subjects: Mechanical Engineering
ContributorsFurgala, Michael (Performer) / Sukhram-Ziemer, Arielle (Performer) / Beymanov, Polina (Performer) / ASU Library. Music Library (Publisher)
Created2023-11-06
Description
Digital signal processing accelerator architectures are designed to provide either high-energy efficiency or high programmability depending on the targeted application and use case. For example, Domain Adaptive Processor (DAP), a highly reconfigurable array architecture, designed by University of Michigan, for signal processing workloads is highly energy efficient but difficult to program. DAP consists of 8x8 array of Processing elements (PE) with each PE containing four heterogeneous SUB-PEs. Each SUB-PE has its own instruction memory and is capable of executing Very Large Instruction Word (VLIW) instructions. Unfortunately, instructions have to be written for every cycle of computation for each SUB-PE used in the application and handcrafted such that all the inter-PE dependencies are synchronized. This thesis builds up on prior work at Arizona State University(ASU) to make DAP more programmable. First, the compiler back-end developed at ASU is extended with more features. Prior work introduced DAP Instruction Set Architecture (ISA), an assembly instruction format, and proposed a compiler framework, called DAP Assembler, with optimization passes to reduce the complexity of programming applications in DAP. While this back-end infrastructure helped generated code with relative ease compared to Very Large Instruction Word (VLIW) code by hand, the output of the code generated was not software-pipelined and the code generated for each Processing Element(PE) had to be manually synchronized. So in this thesis, DAP Assembler tool is extended to support software-pipelining for high throughput applications. Further, a generic synchronization tool is proposed to synchronize instructions in a multi-PE setup and integrated with DAP Assembler to generate synchronized high-throughput application code. Second, a Multi-Level Intermediate Representation(MLIR) based compiler front-end infrastructure is proposed to first lower the application code written by the programmer to an Intermediate Representation (IR) that is suitable for generic array architectures and then further converted to DAP-specific IR that can be used for generating machine code for DAP using DAP ISA. This two stage process enables this infrastructure to be more easily adapted to other array architectures. The first conversion pass uses a designer-provided modular hardware architecture information, called Resource Registry, to allocate operations in the input IR to resources in the Resource registry and capture all data movement. While the resource registry changes from architecture to architecture, the conversion pass algorithm is generic and can be used for other architectures. The second conversion pass is more geared towards DAP and integrates DAP specific constructs to generate optimized instruction in DAP ISA. Multiple kernels such as matrix multiplication, vector-vector addition were implemented using this infrastructure and the code generated by the tool verified to be functionally correct.
ContributorsMurugan, Narayanan (Author) / Chakrabarti, Chaitali Dr (Thesis advisor) / Akoglu, Ali Dr (Committee member) / Bliss, Daniel Dr (Committee member) / Arizona State University (Publisher)
Created2023
Description
Tire blowout often occurs during driving, which can suddenly disturb vehicle motions and seriously threaten road safety. Currently, there is still a lack of effective methods to mitigate tire blowout risks in everyday traffic, even for automated vehicles. To fundamentally study and systematically resolve the tire blowout issue for automated vehicles, a collaborative project between General Motors (GM) and Arizona State University (ASU) has been conducted since 2018. In this dissertation, three main contributions of this project will be presented. First, to explore vehicle dynamics with tire blowout impacts and establish an effective simulation platform for close-loop control performance evaluation, high-fidelity tire blowout models are thoroughly developed by explicitly considering important vehicle parameters and variables. Second, since human cooperation is required to control Level 2/3 partially automated vehicles (PAVs), novel shared steering control schemes are specifically proposed for tire blowout to ensure safe vehicle stabilization via cooperative driving. Third, for Level 4/5 highly automated vehicles (HAVs) without human control, the development of control-oriented vehicle models, controllability study, and automatic control designs are performed based on impulsive differential systems (IDS) theories.
Co-simulations Matlab/Simulink® and CarSim® are conducted to validate performances of all models and control designs proposed in this dissertation. Moreover, a scaled test vehicle at ASU and a full-size test vehicle at GM are well instrumented for data collection and control implementation. Various tire blowout experiments for different scenarios are conducted for more rigorous validations. Consequently, the proposed high-fidelity tire blowout models can correctly and more accurately describe vehicle motions upon tire blowout. The developed shared steering control schemes for PAVs and automatic control designs for HAVs can effectively stabilize a vehicle to maintain path following performance in the driving lane after tire blowout.
In addition to new research findings and developments in this dissertation, a pending patent for tire blowout detection is also generated in the tire blowout project. The obtained research results have attracted interest from automotive manufacturers and could have a significant impact on driving safety enhancement for automated vehicles upon tire blowout.
ContributorsLi, Ao (Author) / Chen, Yan (Thesis advisor) / Berman, Spring (Committee member) / Kannan, Arunachala Mada (Committee member) / Liu, Yongming (Committee member) / Lin, Wen-Chiao (Committee member) / Marvi, Hamidreza (Committee member) / Arizona State University (Publisher)
Created2023
Description
Kuwait is committed to implementing the Kyoto Protocol in “Vision 2035” to reduce greenhouse gas emissions by shifting to the use of wind and solar energies [1]. The specific goal of the Vision 2035 is for renewables to comprise 15% of Kuwait’s electrical generation by 2030. Wind and solar are abundant in Kuwait and can easily provide 15% of the total electrical generation. However, there are three significant obstacles. The first is Kuwait currently depends heavily on rapidly diminishing fossil fuels which are the major sources of CO2, NOx, and SOx emissions. Unfortunately, current plans are to build two conventional power stations by 2024. The purpose is to cover the energy needs for growing population. The second problem is that Kuwait has a very small land area. Consequently, there is limited space to build new utility-scale renewable power stations. The third issue is the low electricity tariff provides little incentive for the population to save energy. Offshore wind farms have the potential to provide thousands of GWh/yr to accomplish the goals of Vision 2035. Kuwait has a vast untapped supply of offshore wind energy. Specifically, there are eight offshore locations in which 50 turbines could be built each, for a total of 400 turbines. Using 4.2 MW turbines, this would provide 1.68 GW of wind energy, and increase the renewable portion of the electrical energy production to 13.93% (including Shagaya renewable park). Installing battery storage with the proposed wind turbines could provide fast ramp response which would serve to complement existing power production on Kuwait’s grid. In this work, six different turbines with different sizes are considered from 2.5 MW to 4.2 MW (from well-known manufacturers, such as, Nordex and Vestas), but ultimately 4.2 MW turbines are recommended. Data for this study has been supplied by: A) Civil Aviation -- temperature and wind speed, B) Ministry of Electricity and Water (MEW) -- electricity data, and C) Public Authority for Civil Information -- population data.
ContributorsAlotaibi, Abdullah Saqer (Author) / Calhoun, Ronald (Thesis advisor) / Kitchen, Jennifer (Thesis advisor) / Roedel, Ronald (Committee member) / Mayyas, Abdul Ra'ouf (Committee member) / Arizona State University (Publisher)
Created2020
The Intercoupling of Thermal Transport and Mechanical Properties in Colloidal Nanocrystal Assemblies
Description
Colloidal nanocrystals (NCs) are promising candidates for a wide range of applications (electronics, optoelectronics, photovoltaics, thermoelectrics, etc.). Mechanical and thermal transport property play very important roles in all of these applications. On one hand, mechanical robustness and high thermal conductivity are desired in electronics, optoelectronics, and photovoltaics. This improves thermomechanical stability and minimizes the temperature rise during the device operation. On the other hand, low thermal conductivity is desired for higher thermoelectric figure of merit (ZT). This dissertation demonstrates that ligand structure and nanocrystal ordering are the primary determining factors for thermal transport and mechanical properties in colloidal nanocrystal assemblies. To eliminate the mechanics and thermal transport barrier, I first propose a ligand crosslinking method to improve the thermal transport across the ligand-ligand interface and thus increasing the overall thermal conductivity of NC assemblies. Young’s modulus of nanocrystal solids also increases simultaneously upon ligand crosslinking. My thermal transport measurements show that the thermal conductivity of the iron oxide NC solids increases by a factor of 2-3 upon ligand crosslinking. Further, I demonstrate that, though with same composition, long-range ordered nanocrystal superlattices possess higher mechanical and thermal transport properties than disordered nanocrystal thin films. Experimental measurements along with theoretical modeling indicate that stronger ligand-ligand interaction in NC superlattice accounts for the improved mechanics and thermal transport. This suggests that NC/ligand arranging order also plays important roles in determining mechanics and thermal transport properties of NC assemblies. Lastly, I show that inorganic ligand functionalization could lead to tremendous mechanical enhancement (a factor of ~60) in NC solids. After ligand exchange and drying, the short inorganic Sn2S64- ligands dissociate into a few atomic layers of amorphous SnS2 at room temperature and interconnects the neighboring NCs. I observe a reverse Hall-Petch relation as the size of NC decreases. Both atomistic simulations and analytical phase mixture modeling identify the grain boundaries and their activities as the mechanic bottleneck.
ContributorsWang, Zhongyong (Author) / Wang, Robert RW (Thesis advisor) / Wang, Liping LW (Committee member) / Newman, Nathan NN (Committee member) / Arizona State University (Publisher)
Created2021
Description
In this dissertation, I investigate the electronic properties of two important silicon(Si)-based heterojunctions 1) hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) which has already been commercialized in Heterojunction with Intrinsic Thin-layer (HIT) cells and 2) gallium phosphide/silicon (GaP/Si) which has been suggested to be a good candidate for replacing a-Si:H/c-Si in HIT cells in order to boost the HIT cell’s efficiency.
In the first part, the defect states of amorphous silicon (a-Si) and a-Si:H material are studied using density functional theory (DFT). I first employ simulated annealing using molecular dynamics (MD) to create stable configurations of a-Si:H, and then analyze the atomic and electronic structure to investigate which structural defects interact with H, and how the electronic structure changes with H addition. I find that H atoms decrease the density of mid-gap states and increase the band gap of a-Si by binding to Si atoms with strained bonds. My results also indicate that Si atoms with strained bonds creates high-localized orbitals in the mobility gap of a-Si, and the binding of H atoms to them can dramatically decrease their degree of localization.
In the second part, I explore the effect of the H binding configuration on the electronic properties of a-Si:H/c-Si heterostructure using density functional theory studies of models of the interface between a-Si:H and c-Si. The electronic properties from DFT show that depending on the energy difference between configurations, the electronic properties are sensitive to the H binding configurations.
In the last part, I examine the electronic structure of GaP/Si(001) heterojunctions and the effect of hydrogen H passivation at the interface in comparison to interface mixing, through DFT calculations. My calculations show that due to the heterovalent mismatch nature of the GaP/Si interface, there is a high density of localized states at the abrupt GaP/Si interface due to the excess charge associated with heterovalent bonding, as reported elsewhere. I find that the addition of H leads to additional bonding at the interface which mitigates the charge imbalance, and greatly reduces the density of localized states, leading to a nearly ideal heterojunction.
In the first part, the defect states of amorphous silicon (a-Si) and a-Si:H material are studied using density functional theory (DFT). I first employ simulated annealing using molecular dynamics (MD) to create stable configurations of a-Si:H, and then analyze the atomic and electronic structure to investigate which structural defects interact with H, and how the electronic structure changes with H addition. I find that H atoms decrease the density of mid-gap states and increase the band gap of a-Si by binding to Si atoms with strained bonds. My results also indicate that Si atoms with strained bonds creates high-localized orbitals in the mobility gap of a-Si, and the binding of H atoms to them can dramatically decrease their degree of localization.
In the second part, I explore the effect of the H binding configuration on the electronic properties of a-Si:H/c-Si heterostructure using density functional theory studies of models of the interface between a-Si:H and c-Si. The electronic properties from DFT show that depending on the energy difference between configurations, the electronic properties are sensitive to the H binding configurations.
In the last part, I examine the electronic structure of GaP/Si(001) heterojunctions and the effect of hydrogen H passivation at the interface in comparison to interface mixing, through DFT calculations. My calculations show that due to the heterovalent mismatch nature of the GaP/Si interface, there is a high density of localized states at the abrupt GaP/Si interface due to the excess charge associated with heterovalent bonding, as reported elsewhere. I find that the addition of H leads to additional bonding at the interface which mitigates the charge imbalance, and greatly reduces the density of localized states, leading to a nearly ideal heterojunction.
ContributorsVatan Meidanshahi, Reza (Author) / Goodnick, Stephen Marshall (Thesis advisor) / Vasileska, Dragica (Committee member) / Bowden, Stuart (Committee member) / Honsberg, Christiana (Committee member) / Arizona State University (Publisher)
Created2019
Description
A well-insulated dark conventional rooftop can be hotter than any other urban surface, including pavements. Since rooftops cover around 20 – 25% of most urban areas, their role in the urban heat island effect is significant. In general, buildings exchange heat with the surroundings in three ways: heat release from the cooling/heating system, air exchange associated with exfiltration and relief air, and heat transfer between the building envelope and surroundings. Several recent studies show that the building envelope generates more heat release into the environment than any other building component.Current advancements in material science have enabled the development of materials and coatings with very high solar reflectance and thermal emissivity, and that can alter their radiative properties based on surface temperature. This dissertation is an effort to quantify the impact of recent developments in such technologies on urban air. The current study addresses three specific unresolved topics: 1) the relative importance of rooftop solar reflectance and thermal emissivity, 2) the role of rooftop radiative properties in different climates, and 3) the impact of temperature-adaptive exterior materials/coatings on building energy savings and urban cooling. The findings from this study show that the use of rooftop materials with solar reflectance above 0.9 maintain the surface temperature below ambient air temperature most of the time, even when the materials have conventional thermal emissivity (0.9). This research has demonstrated that for hot cities, rooftops with high solar reflectance and thermal emittance maximize building energy savings and always cool the surrounding air. For moderate climate regions, high solar reflectance and low thermal emittance result in the greatest building energy cost savings. This combination of radiative properties cools the air during the daytime and warms it at night. Finally, this research found that temperature-adaptive materials could play a significant role in reducing utility costs for poorly insulated buildings, but that they heat the surrounding air in the winter, irrespective of the rooftop insulation.
Through the detailed analysis of building façade radiative properties, this dissertation offers climate-specific design guidance that can be used to simultaneously optimize energy costs while minimizing adverse warming of the surrounding environment.
ContributorsPrem Anand Jayaprabha, Jyothis Anand (Author) / Sailor, David (Thesis advisor) / Phelan, Patrick (Thesis advisor) / Huang, Huei-Ping (Committee member) / Wang, Liping (Committee member) / Yeom, Dongwoo Jason (Committee member) / Arizona State University (Publisher)
Created2022
Description
Over the past few years, research into the use of doped diamond in electronics has seen an exponential growth. In the course of finding ways to reduce the contact resistivity, nanocarbon materials have been an interesting focus. In this work, the transfer length method (TLM) was used to investigate Ohmic contact properties using the tri-layer stack Ti/Pt/Au on nitrogen-doped n-type conducting nano-carbon (nanoC) layers grown on (100) diamond substrates. The nanocarbon material was characterized using Secondary Ion Mass Spectrometry (SIMS), Scanning electron Microscopy (SEM) X-ray diffraction (XRD), Raman scattering and Hall effect measurements to probe the materials characteristics. Room temperature electrical measurements were taken, and samples were annealed to observe changes in electrical conductivity. Low specific contact resistivity values of 8 x 10^-5 Ωcm^2 were achieved, which was almost two orders of magnitude lower than previously reported values. The results were attributed to the increased nitrogen incorporation, and the presence of electrically active defects which leads to an increase in conduction in the nanocarbon. Further a study of light phosphorus doped layers using similar methods with Ti/Pt/Au contacts again yielded a low contact resistivity of about 9.88 x 10^-2 Ωcm^2 which is an interesting prospect among lightly doped diamond films for applications in devices such as transistors. In addition, for the first time, hafnium was substituted for Ti in the contact stack (Hf/Pt/Au) and studied on nitrogen doped nanocarbon films, which resulted in low contact resistivity values on the order of 10^-2 Ωcm^2. The implications of the results were discussed, and recommendations for improving the experimental process was outlined. Lastly, a method for the selective area growth of nanocarbon was developed and studied and the results provided an insight into how different characterizations can be used to confirm the presence of the nanocrystalline diamond material, the limitations due to the film thickness was explored and ideas for future work was proposed.
ContributorsAmonoo, Evangeline Abena (Author) / Thornton, Trevor (Thesis advisor) / Alford, Terry L (Thesis advisor) / Anwar, Shahriar (Committee member) / Theodore, David (Committee member) / Arizona State University (Publisher)
Created2023
Description
Scaling of the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) towards shorter channel lengths, has lead to an increasing importance of quantum effects on the device performance. Until now, a semi-classical model based on Monte Carlo method for instance, has been sufficient to address these issues in silicon, and arrive at a reasonably good fit to experimental mobility data. But as the semiconductor world moves towards 10nm technology, many of the basic assumptions in this method, namely the very fundamental Fermi’s golden rule come into question. The derivation of the Fermi’s golden rule assumes that the scattering is infrequent (therefore the long time limit) and the collision duration time is zero. This thesis overcomes some of the limitations of the above approach by successfully developing a quantum mechanical simulator that can model the low-field inversion layer mobility in silicon MOS capacitors and other inversion layers as well. It solves for the scattering induced collisional broadening of the states by accounting for the various scattering mechanisms present in silicon through the non-equilibrium based near-equilibrium Green’s Functions approach, which shall be referred to as near-equilibrium Green’s Function (nEGF) in this work. It adopts a two-loop approach, where the outer loop solves for the self-consistency between the potential and the subband sheet charge density by solving the Poisson and the Schrödinger equations self-consistently. The inner loop solves for the nEGF (renormalization of the spectrum and the broadening of the states), self-consistently using the self-consistent Born approximation, which is then used to compute the mobility using the Green-Kubo Formalism.
ContributorsJayaram Thulasingam, Gokula Kannan (Author) / Vasileska, Dragica (Thesis advisor) / Ferry, David (Committee member) / Goodnick, Stephen (Committee member) / Allee, David (Committee member) / Arizona State University (Publisher)
Created2017
Description
An efficient thermal solver is available in the CMC that allows modeling self-heating in the electrical simulations, which treats phonons as flux and solves the energy balance equation to quantify thermal effects. Using this solver, thermal simulations were performed on GaN-HEMTs in order to test effect of gate architectures on the DC and RF performance of the device. A Π- gate geometry is found to suppress 19.75% more hot electrons corresponding to a DC power of 2.493 W/mm for Vgs = -0.6V (max transconductance) with respect to the initial T-gate. For the DC performance, the output current, Ids is nearly same for each device configuration over the entire bias range. For the RF performance, the current gain was evaluated over a frequency range 20 GHz to 120 GHz in each device for both thermal (including self-heating) and isothermal (without self-heating). The evaluated cutoff frequency is around 7% lower for the thermal case than the isothermal case. The simulated cutoff frequency closely follows the experimental cutoff frequency. The work was extended to the study of ultra-wide bandgap material (Diamond), where isotope effect causes major deterioration in thermal conductivity. In this case, bulk phonons are modeled as semiclassical particles solving the nonlinear Peierls - Boltzmann transport equation with a stochastic approach. Simulations were performed for 0.001% (ultra-pure), 0.1% and 1.07% isotope concentration (13C) of diamond, showing good agreement with the experimental values. Further investigation was performed on the effect of isotope on the dynamics of individual phonon branches, thermal conductivity and the mean free path, to identify the dominant phonon branch. Acoustic phonons are found to be the principal contributors to thermal conductivity across all isotope concentrations with transverse acoustic (TA2) branch is the dominant branch with a contribution of 40% at room temperature and 37% at 500K. Mean free path computations show the lower bound of device dimensions in order to obtain maximum thermal conductivity. At 300K, the lowest mean free path (which is attributed to Longitudinal Optical phonon) reduces from 24nm to 8 nm for isotope concentration of 0.001% and 1.07% respectively. Similarly, the maximum mean free path (which is attributed to Longitudinal Acoustic phonon) reduces from 4 µm to 3.1 µm, respectively, for the same isotope concentrations. Furthermore, PETSc (Portable, Extensible Toolkit for Scientific Computation) developed by Argonne National Lab, was included in the existing Cellular Monte Carlo device simulator as a Poisson solver to further extend the capability of the simulator. The validity of the solver was tested performing 2D and 3D simulations and the results were compared with the well-established multigrid Poisson solver.
ContributorsAcharjee, Joy (Author) / Saraniti, Marco (Thesis advisor) / Goodnick, Stephen (Committee member) / Thornton, Trevor (Committee member) / Wang, Robert (Committee member) / Arizona State University (Publisher)
Created2024