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Description
Underwater acoustic communications face significant challenges unprecedented in radio terrestrial communications including long multipath delay spreads, strong Doppler effects, and stringent bandwidth requirements. Recently, multi-carrier communications based on orthogonal frequency division multiplexing (OFDM) have seen significant growth in underwater acoustic (UWA) communications, thanks to their well well-known robustness against severely

Underwater acoustic communications face significant challenges unprecedented in radio terrestrial communications including long multipath delay spreads, strong Doppler effects, and stringent bandwidth requirements. Recently, multi-carrier communications based on orthogonal frequency division multiplexing (OFDM) have seen significant growth in underwater acoustic (UWA) communications, thanks to their well well-known robustness against severely time-dispersive channels. However, the performance of OFDM systems over UWA channels significantly deteriorates due to severe intercarrier interference (ICI) resulting from rapid time variations of the channel. With the motivation of developing enabling techniques for OFDM over UWA channels, the major contributions of this thesis include (1) two effective frequencydomain equalizers that provide general means to counteract the ICI; (2) a family of multiple-resampling receiver designs dealing with distortions caused by user and/or path specific Doppler scaling effects; (3) proposal of using orthogonal frequency division multiple access (OFDMA) as an effective multiple access scheme for UWA communications; (4) the capacity evaluation for single-resampling versus multiple-resampling receiver designs. All of the proposed receiver designs have been verified both through simulations and emulations based on data collected in real-life UWA communications experiments. Particularly, the frequency domain equalizers are shown to be effective with significantly reduced pilot overhead and offer robustness against Doppler and timing estimation errors. The multiple-resampling designs, where each branch is tasked with the Doppler distortion of different paths and/or users, overcome the disadvantages of the commonly-used single-resampling receivers and yield significant performance gains. Multiple-resampling receivers are also demonstrated to be necessary for UWA OFDMA systems. The unique design effectively mitigates interuser interference (IUI), opening up the possibility to exploit advanced user subcarrier assignment schemes. Finally, the benefits of the multiple-resampling receivers are further demonstrated through channel capacity evaluation results.
ContributorsTu, Kai (Author) / Duman, Tolga M. (Thesis advisor) / Zhang, Junshan (Committee member) / Tepedelenlioğlu, Cihan (Committee member) / Papandreou-Suppappola, Antonia (Committee member) / Arizona State University (Publisher)
Created2011
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Description
Semiconductor nanowires are featured by their unique one-dimensional structure which makes them promising for small scale electronic and photonic device applications. Among them, III-V material nanowires are particularly outstanding due to their good electronic properties. In bulk, these materials reveal electron mobility much higher than conventional silicon based devices, for

Semiconductor nanowires are featured by their unique one-dimensional structure which makes them promising for small scale electronic and photonic device applications. Among them, III-V material nanowires are particularly outstanding due to their good electronic properties. In bulk, these materials reveal electron mobility much higher than conventional silicon based devices, for example at room temperature, InAs field effect transistor (FET) has electron mobility of 40,000 cm2/Vs more than 10 times of Si FET. This makes such materials promising for high speed nanowire FETs. With small bandgap, such as 0.354 eV for InAs and 1.52 eV for GaAs, it does not need high voltage to turn on such devices which leads to low power consumption devices. Another feature of direct bandgap allows their applications of optoelectronic devices such as avalanche photodiodes. However, there are challenges to face up. Due to their large surface to volume ratio, nanowire devices typically are strongly affected by the surface states. Although nanowires can be grown into single crystal structure, people observe crystal defects along the wires which can significantly affect the performance of devices. In this work, FETs made of two types of III-V nanowire, GaAs and InAs, are demonstrated. These nanowires are grown by catalyst-free MOCVD growth method. Vertically nanowires are transferred onto patterned substrates for coordinate calibration. Then electrodes are defined by e-beam lithography followed by deposition of contact metals. Prior to metal deposition, however, the substrates are dipped in ammonium hydroxide solution to remove native oxide layer formed on nanowire surface. Current vs. source-drain voltage with different gate bias are measured at room temperature. GaAs nanowire FETs show photo response while InAs nanowire FETs do not show that. Surface passivation is performed on GaAs FETs by using ammonium surfide solution. The best results on current increase is observed with around 20-30 minutes chemical treatment time. Gate response measurements are performed at room temperature, from which field effect mobility as high as 1490 cm2/Vs is extracted for InAs FETs. One major contributor for this is stacking faults defect existing along nanowires. For InAs FETs, thermal excitations observed from temperature dependent results which leads us to investigate potential barriers.
ContributorsLiang, Hanshuang (Author) / Yu, Hongbin (Thesis advisor) / Ferry, David (Committee member) / Tracy, Clarence (Committee member) / Arizona State University (Publisher)
Created2011
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Description
Great advances have been made in the construction of photovoltaic (PV) cells and modules, but array level management remains much the same as it has been in previous decades. Conventionally, the PV array is connected in a fixed topology which is not always appropriate in the presence of faults in

Great advances have been made in the construction of photovoltaic (PV) cells and modules, but array level management remains much the same as it has been in previous decades. Conventionally, the PV array is connected in a fixed topology which is not always appropriate in the presence of faults in the array, and varying weather conditions. With the introduction of smarter inverters and solar modules, the data obtained from the photovoltaic array can be used to dynamically modify the array topology and improve the array power output. This is beneficial especially when module mismatches such as shading, soiling and aging occur in the photovoltaic array. This research focuses on the topology optimization of PV arrays under shading conditions using measurements obtained from a PV array set-up. A scheme known as topology reconfiguration method is proposed to find the optimal array topology for a given weather condition and faulty module information. Various topologies such as the series-parallel (SP), the total cross-tied (TCT), the bridge link (BL) and their bypassed versions are considered. The topology reconfiguration method compares the efficiencies of the topologies, evaluates the percentage gain in the generated power that would be obtained by reconfiguration of the array and other factors to find the optimal topology. This method is employed for various possible shading patterns to predict the best topology. The results demonstrate the benefit of having an electrically reconfigurable array topology. The effects of irradiance and shading on the array performance are also studied. The simulations are carried out using a SPICE simulator. The simulation results are validated with the experimental data provided by the PACECO Company.
ContributorsBuddha, Santoshi Tejasri (Author) / Spanias, Andreas (Thesis advisor) / Tepedelenlioğlu, Cihan (Thesis advisor) / Zhang, Junshan (Committee member) / Arizona State University (Publisher)
Created2011
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Description
Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles trapped in the Earth's magnetosphere, the solar wind, and cosmic rays. This constant radiation exposure leads to early end-of-life expectancies

Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles trapped in the Earth's magnetosphere, the solar wind, and cosmic rays. This constant radiation exposure leads to early end-of-life expectancies for many electronic parts. Exposure to ionizing radiation increases the density of oxide and interfacial defects in bipolar oxides leading to an increase in base current in bipolar junction transistors. Radiation-induced excess base current is the primary cause of current gain degradation. Analysis of base current response can enable the measurement of defects generated by radiation exposure. In addition to radiation, the space environment is also characterized by extreme temperature fluctuations. Temperature, like radiation, also has a very strong impact on base current. Thus, a technique for separating the effects of radiation from thermal effects is necessary in order to accurately measure radiation-induced damage in space. This thesis focuses on the extraction of radiation damage in lateral PNP bipolar junction transistors and the space environment. It also describes the measurement techniques used and provides a quantitative analysis methodology for separating radiation and thermal effects on the bipolar base current.
ContributorsCampola, Michael J (Author) / Barnaby, Hugh J (Thesis advisor) / Holbert, Keith E. (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2011
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Description
A workload-aware low-power neuromorphic controller for dynamic power and thermal management in VLSI systems is presented. The neuromorphic controller predicts future workload and temperature values based on the past values and CPU performance counters and preemptively regulates supply voltage and frequency. System-level measurements from stateof-the-art commercial microprocessors are used to

A workload-aware low-power neuromorphic controller for dynamic power and thermal management in VLSI systems is presented. The neuromorphic controller predicts future workload and temperature values based on the past values and CPU performance counters and preemptively regulates supply voltage and frequency. System-level measurements from stateof-the-art commercial microprocessors are used to get workload, temperature and CPU performance counter values. The controller is designed and simulated using circuit-design and synthesis tools. At device-level, on-chip planar inductors suffer from low inductance occupying large chip area. On-chip inductors with integrated magnetic materials are designed, simulated and fabricated to explore performance-efficiency trade offs and explore potential applications such as resonant clocking and on-chip voltage regulation. A system level study is conducted to evaluate the effect of on-chip voltage regulator employing magnetic inductors as the output filter. It is concluded that neuromorphic power controller is beneficial for fine-grained per-core power management in conjunction with on-chip voltage regulators utilizing scaled magnetic inductors.
ContributorsSinha, Saurabh (Author) / Cao, Yu (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Yu, Hongbin (Committee member) / Christen, Jennifer B. (Committee member) / Arizona State University (Publisher)
Created2011
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Description
There are many wireless communication and networking applications that require high transmission rates and reliability with only limited resources in terms of bandwidth, power, hardware complexity etc.. Real-time video streaming, gaming and social networking are a few such examples. Over the years many problems have been addressed towards the goal

There are many wireless communication and networking applications that require high transmission rates and reliability with only limited resources in terms of bandwidth, power, hardware complexity etc.. Real-time video streaming, gaming and social networking are a few such examples. Over the years many problems have been addressed towards the goal of enabling such applications; however, significant challenges still remain, particularly, in the context of multi-user communications. With the motivation of addressing some of these challenges, the main focus of this dissertation is the design and analysis of capacity approaching coding schemes for several (wireless) multi-user communication scenarios. Specifically, three main themes are studied: superposition coding over broadcast channels, practical coding for binary-input binary-output broadcast channels, and signalling schemes for two-way relay channels. As the first contribution, we propose an analytical tool that allows for reliable comparison of different practical codes and decoding strategies over degraded broadcast channels, even for very low error rates for which simulations are impractical. The second contribution deals with binary-input binary-output degraded broadcast channels, for which an optimal encoding scheme that achieves the capacity boundary is found, and a practical coding scheme is given by concatenation of an outer low density parity check code and an inner (non-linear) mapper that induces desired distribution of "one" in a codeword. The third contribution considers two-way relay channels where the information exchange between two nodes takes place in two transmission phases using a coding scheme called physical-layer network coding. At the relay, a near optimal decoding strategy is derived using a list decoding algorithm, and an approximation is obtained by a joint decoding approach. For the latter scheme, an analytical approximation of the word error rate based on a union bounding technique is computed under the assumption that linear codes are employed at the two nodes exchanging data. Further, when the wireless channel is frequency selective, two decoding strategies at the relay are developed, namely, a near optimal decoding scheme implemented using list decoding, and a reduced complexity detection/decoding scheme utilizing a linear minimum mean squared error based detector followed by a network coded sequence decoder.
ContributorsBhat, Uttam (Author) / Duman, Tolga M. (Thesis advisor) / Tepedelenlioğlu, Cihan (Committee member) / Li, Baoxin (Committee member) / Zhang, Junshan (Committee member) / Arizona State University (Publisher)
Created2011
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Description
Following the success in incorporating perceptual models in audio coding algorithms, their application in other speech/audio processing systems is expanding. In general, all perceptual speech/audio processing algorithms involve minimization of an objective function that directly/indirectly incorporates properties of human perception. This dissertation primarily investigates the problems associated with directly embedding

Following the success in incorporating perceptual models in audio coding algorithms, their application in other speech/audio processing systems is expanding. In general, all perceptual speech/audio processing algorithms involve minimization of an objective function that directly/indirectly incorporates properties of human perception. This dissertation primarily investigates the problems associated with directly embedding an auditory model in the objective function formulation and proposes possible solutions to overcome high complexity issues for use in real-time speech/audio algorithms. Specific problems addressed in this dissertation include: 1) the development of approximate but computationally efficient auditory model implementations that are consistent with the principles of psychoacoustics, 2) the development of a mapping scheme that allows synthesizing a time/frequency domain representation from its equivalent auditory model output. The first problem is aimed at addressing the high computational complexity involved in solving perceptual objective functions that require repeated application of auditory model for evaluation of different candidate solutions. In this dissertation, a frequency pruning and a detector pruning algorithm is developed that efficiently implements the various auditory model stages. The performance of the pruned model is compared to that of the original auditory model for different types of test signals in the SQAM database. Experimental results indicate only a 4-7% relative error in loudness while attaining up to 80-90 % reduction in computational complexity. Similarly, a hybrid algorithm is developed specifically for use with sinusoidal signals and employs the proposed auditory pattern combining technique together with a look-up table to store representative auditory patterns. The second problem obtains an estimate of the auditory representation that minimizes a perceptual objective function and transforms the auditory pattern back to its equivalent time/frequency representation. This avoids the repeated application of auditory model stages to test different candidate time/frequency vectors in minimizing perceptual objective functions. In this dissertation, a constrained mapping scheme is developed by linearizing certain auditory model stages that ensures obtaining a time/frequency mapping corresponding to the estimated auditory representation. This paradigm was successfully incorporated in a perceptual speech enhancement algorithm and a sinusoidal component selection task.
ContributorsKrishnamoorthi, Harish (Author) / Spanias, Andreas (Thesis advisor) / Papandreou-Suppappola, Antonia (Committee member) / Tepedelenlioğlu, Cihan (Committee member) / Tsakalis, Konstantinos (Committee member) / Arizona State University (Publisher)
Created2011
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Description
The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologies in harsh radiation environments has resulted in a new approach to radiation effects mitigation. This approach utilizes simulation to support the design of integrated circuits (ICs) to meet targeted tolerance specifications. Modeling the deleterious impact of ionizing radiation on ICs fabricated

The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologies in harsh radiation environments has resulted in a new approach to radiation effects mitigation. This approach utilizes simulation to support the design of integrated circuits (ICs) to meet targeted tolerance specifications. Modeling the deleterious impact of ionizing radiation on ICs fabricated in advanced CMOS technologies requires understanding and analyzing the basic mechanisms that result in buildup of radiation-induced defects in specific sensitive regions. Extensive experimental studies have demonstrated that the sensitive regions are shallow trench isolation (STI) oxides. Nevertheless, very little work has been done to model the physical mechanisms that result in the buildup of radiation-induced defects and the radiation response of devices fabricated in these technologies. A comprehensive study of the physical mechanisms contributing to the buildup of radiation-induced oxide trapped charges and the generation of interface traps in advanced CMOS devices is presented in this dissertation. The basic mechanisms contributing to the buildup of radiation-induced defects are explored using a physical model that utilizes kinetic equations that captures total ionizing dose (TID) and dose rate effects in silicon dioxide (SiO2). These mechanisms are formulated into analytical models that calculate oxide trapped charge density (Not) and interface trap density (Nit) in sensitive regions of deep-submicron devices. Experiments performed on field-oxide-field-effect-transistors (FOXFETs) and metal-oxide-semiconductor (MOS) capacitors permit investigating TID effects and provide a comparison for the radiation response of advanced CMOS devices. When used in conjunction with closed-form expressions for surface potential, the analytical models enable an accurate description of radiation-induced degradation of transistor electrical characteristics. In this dissertation, the incorporation of TID effects in advanced CMOS devices into surface potential based compact models is also presented. The incorporation of TID effects into surface potential based compact models is accomplished through modifications of the corresponding surface potential equations (SPE), allowing the inclusion of radiation-induced defects (i.e., Not and Nit) into the calculations of surface potential. Verification of the compact modeling approach is achieved via comparison with experimental data obtained from FOXFETs fabricated in a 90 nm low-standby power commercial bulk CMOS technology and numerical simulations of fully-depleted (FD) silicon-on-insulator (SOI) n-channel transistors.
ContributorsSanchez Esqueda, Ivan (Author) / Barnaby, Hugh J (Committee member) / Schroder, Dieter (Thesis advisor) / Schroder, Dieter K. (Committee member) / Holbert, Keith E. (Committee member) / Gildenblat, Gennady (Committee member) / Arizona State University (Publisher)
Created2011
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Description
For synthetic aperture radar (SAR) image formation processing, the chirp scaling algorithm (CSA) has gained considerable attention mainly because of its excellent target focusing ability, optimized processing steps, and ease of implementation. In particular, unlike the range Doppler and range migration algorithms, the CSA is easy to implement since it

For synthetic aperture radar (SAR) image formation processing, the chirp scaling algorithm (CSA) has gained considerable attention mainly because of its excellent target focusing ability, optimized processing steps, and ease of implementation. In particular, unlike the range Doppler and range migration algorithms, the CSA is easy to implement since it does not require interpolation, and it can be used on both stripmap and spotlight SAR systems. Another transform that can be used to enhance the processing of SAR image formation is the fractional Fourier transform (FRFT). This transform has been recently introduced to the signal processing community, and it has shown many promising applications in the realm of SAR signal processing, specifically because of its close association to the Wigner distribution and ambiguity function. The objective of this work is to improve the application of the FRFT in order to enhance the implementation of the CSA for SAR processing. This will be achieved by processing real phase-history data from the RADARSAT-1 satellite, a multi-mode SAR platform operating in the C-band, providing imagery with resolution between 8 and 100 meters at incidence angles of 10 through 59 degrees. The phase-history data will be processed into imagery using the conventional chirp scaling algorithm. The results will then be compared using a new implementation of the CSA based on the use of the FRFT, combined with traditional SAR focusing techniques, to enhance the algorithm's focusing ability, thereby increasing the peak-to-sidelobe ratio of the focused targets. The FRFT can also be used to provide focusing enhancements at extended ranges.
ContributorsNorthrop, Judith (Author) / Papandreou-Suppappola, Antonia (Thesis advisor) / Spanias, Andreas (Committee member) / Tepedelenlioğlu, Cihan (Committee member) / Arizona State University (Publisher)
Created2011
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Description
CMOS technology is expected to enter the 10nm regime for future integrated circuits (IC). Such aggressive scaling leads to vastly increased variability, posing a grand challenge to robust IC design. Variations in CMOS are often divided into two types: intrinsic variations and process-induced variations. Intrinsic variations are limited by fundamental

CMOS technology is expected to enter the 10nm regime for future integrated circuits (IC). Such aggressive scaling leads to vastly increased variability, posing a grand challenge to robust IC design. Variations in CMOS are often divided into two types: intrinsic variations and process-induced variations. Intrinsic variations are limited by fundamental physics. They are inherent to CMOS structure, considered as one of the ultimate barriers to the continual scaling of CMOS devices. In this work the three primary intrinsic variations sources are studied, including random dopant fluctuation (RDF), line-edge roughness (LER) and oxide thickness fluctuation (OTF). The research is focused on the modeling and simulation of those variations and their scaling trends. Besides the three variations, a time dependent variation source, Random Telegraph Noise (RTN) is also studied. Different from the other three variations, RTN does not contribute much to the total variation amount, but aggregate the worst case of Vth variations in CMOS. In this work a TCAD based simulation study on RTN is presented, and a new SPICE based simulation method for RTN is proposed for time domain circuit analysis. Process-induced variations arise from the imperfection in silicon fabrication, and vary from foundries to foundries. In this work the layout dependent Vth shift due to Rapid-Thermal Annealing (RTA) are investigated. In this work, we develop joint thermal/TCAD simulation and compact modeling tools to analyze performance variability under various layout pattern densities and RTA conditions. Moreover, we propose a suite of compact models that bridge the underlying RTA process with device parameter change for efficient design optimization.
ContributorsYe, Yun, Ph.D (Author) / Cao, Yu (Thesis advisor) / Yu, Hongbin (Committee member) / Song, Hongjiang (Committee member) / Clark, Lawrence (Committee member) / Arizona State University (Publisher)
Created2011