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Description
As crystalline silicon solar cells continue to get thinner, the recombination of carriers at the surfaces of the cell plays an ever-important role in controlling the cell efficiency. One tool to minimize surface recombination is field effect passivation from the charges present in the thin films applied on the cell surfaces. The focus of this work is to understand the properties of charges present in the SiNx films and then to develop a mechanism to manipulate the polarity of charges to either negative or positive based on the end-application. Specific silicon-nitrogen dangling bonds (·Si-N), known as K center defects, are the primary charge trapping defects present in the SiNx films. A custom built corona charging tool was used to externally inject positive or negative charges in the SiNx film. Detailed Capacitance-Voltage (C-V) measurements taken on corona charged SiNx samples confirmed the presence of a net positive or negative charge density, as high as +/- 8 x 1012 cm-2, present in the SiNx film. High-energy (~ 4.9 eV) UV radiation was used to control and neutralize the charges in the SiNx films. Electron-Spin-Resonance (ESR) technique was used to detect and quantify the density of neutral K0 defects that are paramagnetically active. The density of the neutral K0 defects increased after UV treatment and decreased after high temperature annealing and charging treatments. Etch-back C-V measurements on SiNx films showed that the K centers are spread throughout the bulk of the SiNx film and not just near the SiNx-Si interface. It was also shown that the negative injected charges in the SiNx film were stable and present even after 1 year under indoor room-temperature conditions. Lastly, a stack of SiO2/SiNx dielectric layers applicable to standard commercial solar cells was developed using a low temperature (< 400 °C) PECVD process. Excellent surface passivation on FZ and CZ Si substrates for both n- and p-type samples was achieved by manipulating and controlling the charge in SiNx films.
ContributorsSharma, Vivek (Author) / Bowden, Stuart (Thesis advisor) / Schroder, Dieter (Committee member) / Honsberg, Christiana (Committee member) / Roedel, Ronald (Committee member) / Alford, Terry (Committee member) / Arizona State University (Publisher)
Created2013
Description
Photovoltaic (PV) module nameplates typically provide the module's electrical characteristics at standard test conditions (STC). The STC conditions are: irradiance of 1000 W/m2, cell temperature of 25oC and sunlight spectrum at air mass 1.5. However, modules in the field experience a wide range of environmental conditions which affect their electrical characteristics and render the nameplate data insufficient in determining a module's overall, actual field performance. To make sound technical and financial decisions, designers and investors need additional performance data to determine the energy produced by modules operating under various field conditions. The angle of incidence (AOI) of sunlight on PV modules is one of the major parameters which dictate the amount of light reaching the solar cells. The experiment was carried out at the Arizona State University- Photovoltaic Reliability Laboratory (ASU-PRL). The data obtained was processed in accordance with the IEC 61853-2 model to obtain relative optical response of the modules (response which does not include the cosine effect). The results were then compared with theoretical models for air-glass interface and also with the empirical model developed by Sandia National Laboratories. The results showed that all modules with glass as the superstrate had identical optical response and were in agreement with both the IEC 61853-2 model and other theoretical and empirical models. The performance degradation of module over years of exposure in the field is dependent upon factors such as environmental conditions, system configuration, etc. Analyzing the degradation of power and other related performance parameters over time will provide vital information regarding possible degradation rates and mechanisms of the modules. An extensive study was conducted by previous ASU-PRL students on approximately 1700 modules which have over 13 years of hot- dry climatic field condition. An analysis of the results obtained in previous ASU-PRL studies show that the major degradation in crystalline silicon modules having glass/polymer construction is encapsulant discoloration (causing short circuit current drop) and solder bond degradation (causing fill factor drop due to series resistance increase). The power degradation for crystalline silicon modules having glass/glass construction was primarily attributed to encapsulant delamination (causing open-circuit voltage drop).
ContributorsVasantha Janakeeraman, Suryanarayana (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Rogers, Bradley (Committee member) / Macia, Narciso (Committee member) / Arizona State University (Publisher)
Created2013
Description
GaAs-based solar cells have attracted much interest because of their high conversion efficiencies of ~28% under one sun illumination. The main carrier recombination mechanisms in the GaAs-based solar cells are surface recombination, radiative recombination and non-radiative recombination. Photon recycling reduces the effect of radiative recombination and is an approach to obtain the device performance described by detailed balance theory. The photon recycling model has been developed and was applied to investigate the loss mechanisms in the state-of-the-art GaAs-based solar cell structures using PC1D software. A standard fabrication process of the GaAs-based solar cells is as follows: wafer preparation, individual cell isolation by mesa, n- and p-type metallization, rapid thermal annealing (RTA), cap layer etching, and anti-reflection coating (ARC). The growth rate for GaAs-based materials is one of critical factors to determine the cost for the growth of GaAs-based solar cells. The cost for fabricating GaAs-based solar cells can be reduced if the growth rate is increased without degrading the crystalline quality. The solar cell wafers grown at different growth rates of 14 μm/hour and 55 μm/hour were discussed in this work. The structural properties of the wafers were characterized by X-ray diffraction (XRD) to identify the crystalline quality, and then the as-grown wafers were fabricated into solar cell devices under the same process conditions. The optical and electrical properties such as surface reflection, external quantum efficiency (EQE), dark I-V, Suns-Voc, and illuminated I-V under one sun using a solar simulator were measured to compare the performances of the solar cells with different growth rates. Some simulations in PC1D have been demonstrated to investigate the reasons of the different device performances between fast growth and slow growth structures. A further analysis of the minority carrier lifetime is needed to investigate into the difference in device performances.
ContributorsZhang, Chaomin (Author) / Honsberg, Christiana (Thesis advisor) / Goodnick, Stephen (Committee member) / Faleev, Nikolai (Committee member) / Arizona State University (Publisher)
Created2014
Description
In the interest of expediting future pilot line start-ups for solar cell research, the development of Arizona State University's student-led pilot line at the Solar Power Laboratory is discussed extensively within this work. Several experiments and characterization techniques used to formulate and optimize a series of processes for fabricating diffused-junction, screen-printed silicon solar cells are expounded upon. An experiment is conducted in which the thickness of a PECVD deposited anti-reflection coating (ARC) is varied across several samples and modeled as a function of deposition time. Using this statistical model in tandem with reflectance measurements for each sample, the ARC thickness is optimized to increase light trapping in the solar cells. A response surface model (RSM) experiment is conducted in which 3 process parameters are varied on the PECVD tool for the deposition of the ARCs on several samples. A contactless photoconductance decay (PCD) tool is used to measure the dark saturation currents of these samples. A statistical analysis is performed using JMP in which optimum deposition parameters are found. A separate experiment shows an increase in the passivation quality of the a-SiNx:H ARCs deposited on the solar cells made on the line using these optimum parameters. A RSM experiment is used to optimize the printing process for a particular silver paste in a similar fashion, the results of which are confirmed by analyzing the series resistance of subsequent cells fabricated on the line. An in-depth explanation of a more advanced analysis using JMP and PCD measurements on the passivation quality of 3 aluminum back-surface fields (BSF) is given. From this experiment, a comparison of the means is conducted in order to choose the most effective BSF paste for cells fabricated on the line. An experiment is conducted in parallel which confirms the results via Voc measurements. It is shown that in a period of 11 months, the pilot line went from producing a top cell efficiency of 11.5% to 17.6%. Many of these methods used for the development of this pilot line are equally applicable to other cell structures, and can easily be applied to other solar cell pilot lines.
ContributorsPickett, Guy (Author) / Bowden, Stuart (Thesis advisor) / Honsberg, Christiana (Committee member) / Bertoni, Mariana (Committee member) / Arizona State University (Publisher)
Created2014
Description
Silicon (Si) solar cells are the dominant technology used in the Photovoltaics industry. Field-effect passivation by means of electrostatic charges stored in an overlying insulator on a silicon solar cell has been proven to be a significantly efficient way to reduce effective surface recombination velocity and increase minority carrier lifetime. Silicon nitride (SiNx) films have been extensively used as passivation layers. The capability to store charges makes SiNx a promising material for excellent feild effect passivation. In this work, symmetrical Si/SiO2/SiNx stacks are developed to study the effect of charges in SiNx films. SiO2 films work as barrier layers. Corona charging technique showed the ability to inject charges into the SiNx films in a short time. Minority carrier lifetimes of the Czochralski (CZ) Si wafers increased significantly after either positive or negative charging. A fast and contactless method to characterize the charged overlying insulators on Si wafer through lifetime measurements is proposed and studied in this work, to overcome the drawbacks of capacitance-voltage (CV) measurements such as time consuming, induction of contanmination and hysteresis effect, etc. Analytical simulations showed behaviors of inverse lifetime (Auger corrected) vs. minority carrier density curves depend on insulator charge densities (Nf). From the curve behavior, the Si surface condition and region of Nf can be estimated. When the silicon surface is at high strong inversion or high accumulation, insulator charge density (Nf) or surface recombination velocity parameters (Sn0 and Sp0) can be determined from the slope of inverse lifetime curves, if the other variable is known. If Sn0 and Sp0 are unknown, Nf values of different samples can be compared as long as all have similar Sn0 and Sp0 values. Using the saturation current density (J0) and intercept fit extracted from the lifetime measurement, the bulk lifetime can be calculated. Therefore, this method is feasible and promising for charged insulator characterization.
ContributorsYang, Qun (Author) / Bowden, Stuart (Thesis advisor) / Honsberg, Christiana (Committee member) / Tracy, Clarence (Committee member) / Arizona State University (Publisher)
Created2014
Description
To increase the deployment of photovoltaic (PV) systems, a higher level of performance for PV modules should be sought. Soiling, or dust accumulation on the PV modules, is one of the conditions that negatively affect the performance of the PV modules by reducing the light incident onto the surface of the PV module. This thesis presents two studies that focus on investigating the soiling effect on the performance of the PV modules installed in Metro Phoenix area.
The first study was conducted to investigate the optimum cleaning frequency for cleaning PV modules installed in Mesa, AZ. By monitoring the soiling loss of PV modules mounted on a mock rooftop at ASU-PRL, a detailed soiling modeling was obtained. Same setup was also used for other soiling-related investigations like studying the effect of soiling density on angle of incidence (AOI) dependence, the climatological relevance (CR) to soiling, and spatial variation of the soiling loss. During the first dry season (May to June), the daily soiling rate was found as -0.061% for 20o tilted modules. Based on the obtained soiling rate, cleaning PV modules, when the soiling is just due to dust on 20o tilted residential arrays, was found economically not justifiable.
The second study focuses on evaluating the soiling loss in different locations of Metro Phoenix area of Arizona. The main goal behind the second study was to validate the daily soiling rate obtained from the mock rooftop setup in the first part of this thesis. By collaborating with local solar panel cleaning companies, soiling data for six residential systems in 5 different cities in and around Phoenix was collected, processed, and analyzed. The range of daily soiling rate in the Phoenix area was found as -0.057% to -0.085% for 13-28o tilted arrays. The soiling rate found in the first part of the thesis (-0.061%) for 20o tilted array, was validated since it falls within the range obtained from the second part of the thesis.
The first study was conducted to investigate the optimum cleaning frequency for cleaning PV modules installed in Mesa, AZ. By monitoring the soiling loss of PV modules mounted on a mock rooftop at ASU-PRL, a detailed soiling modeling was obtained. Same setup was also used for other soiling-related investigations like studying the effect of soiling density on angle of incidence (AOI) dependence, the climatological relevance (CR) to soiling, and spatial variation of the soiling loss. During the first dry season (May to June), the daily soiling rate was found as -0.061% for 20o tilted modules. Based on the obtained soiling rate, cleaning PV modules, when the soiling is just due to dust on 20o tilted residential arrays, was found economically not justifiable.
The second study focuses on evaluating the soiling loss in different locations of Metro Phoenix area of Arizona. The main goal behind the second study was to validate the daily soiling rate obtained from the mock rooftop setup in the first part of this thesis. By collaborating with local solar panel cleaning companies, soiling data for six residential systems in 5 different cities in and around Phoenix was collected, processed, and analyzed. The range of daily soiling rate in the Phoenix area was found as -0.057% to -0.085% for 13-28o tilted arrays. The soiling rate found in the first part of the thesis (-0.061%) for 20o tilted array, was validated since it falls within the range obtained from the second part of the thesis.
ContributorsNaeem, Mohammad Hussain (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Rogers, Bradley (Committee member) / Srinivasan, Devarajan (Committee member) / Arizona State University (Publisher)
Created2014
Description
As existing solar cell technologies come closer to their theoretical efficiency, new concepts that overcome the Shockley-Queisser limit and exceed 50% efficiency need to be explored. New materials systems are often investigated to achieve this, but the use of existing solar cell materials in advanced concept approaches is compelling for multiple theoretical and practical reasons. In order to include advanced concept approaches into existing materials, nanostructures are used as they alter the physical properties of these materials. To explore advanced nanostructured concepts with existing materials such as III-V alloys, silicon and/or silicon/germanium and associated alloys, fundamental aspects of using these materials in advanced concept nanostructured solar cells must be understood. Chief among these is the determination and predication of optimum electronic band structures, including effects such as strain on the band structure, and the material's opto-electronic properties. Nanostructures have a large impact on band structure and electronic properties through quantum confinement. An additional large effect is the change in band structure due to elastic strain caused by lattice mismatch between the barrier and nanostructured (usually self-assembled QDs) materials. To develop a material model for advanced concept solar cells, the band structure is calculated for single as well as vertical array of quantum dots with the realistic effects such as strain, associated with the epitaxial growth of these materials. The results show significant effect of strain in band structure. More importantly, the band diagram of a vertical array of QDs with different spacer layer thickness show significant change in band offsets, especially for heavy and light hole valence bands when the spacer layer thickness is reduced. These results, ultimately, have significance to develop a material model for advance concept solar cells that use the QD nanostructures as absorbing medium. The band structure calculations serve as the basis for multiple other calculations. Chief among these is that the model allows the design of a practical QD advanced concept solar cell, which meets key design criteria such as a negligible valence band offset between the QD/barrier materials and close to optimum band gaps, resulting in the predication of optimum material combinations.
ContributorsDahal, Som Nath (Author) / Honsberg, Christiana (Thesis advisor) / Goodnick, Stephen (Committee member) / Roedel, Ronald (Committee member) / Ponce, Fernando (Committee member) / Arizona State University (Publisher)
Created2011
Description
Due to the ever increasing relevance of finer machining control as well as necessary reduction in material waste by large area semiconductor device manufacturers, a novel bulk laser machining method was investigated. Because the cost of silicon and sapphire substrates are limiting to the reduction in cost of devices in both the light emitting diode (LED) and solar industries, and the present substrate wafering process results in >50% waste, the need for an improved ingot wafering technique exists.
The focus of this work is the design and understanding of a novel semiconductor wafering technique that utilizes the nonlinear absorption properties of band-gapped materials to achieve bulk (subsurface) morphological changes in matter using highly focused laser light. A method and tool was designed and developed to form controlled damage regions in the bulk of a crystalline sapphire wafer leaving the surfaces unaltered. The controllability of the subsurface damage geometry was investigated, and the effect of numerical aperture of the focusing optic, energy per pulse, wavelength, and number of pulses was characterized for a nanosecond pulse length variable wavelength Nd:YAG OPO laser.
A novel model was developed to describe the geometry of laser induced morphological changes in the bulk of semiconducting materials for nanosecond pulse lengths. The beam propagation aspect of the model was based on ray-optics, and the full Keldysh multiphoton photoionization theory in conjuncture with Thornber's and Drude's models for impact ionization were used to describe high fluence laser light absorption and carrier generation ultimately resulting in permanent material modification though strong electron-plasma absorption and plasma melting. Although the electron-plasma description of laser damage formation is usually reserved for extremely short laser pulses (<20 ps), this work shows that it can be adapted for longer pulses of up to tens of nanoseconds.
In addition to a model describing damage formation of sub-band gap energy laser light in semiconducting and transparent crystalline dielectrics, a novel nanosecond laser process was successfully realized to generate a thin plane of damage in the bulk of sapphire wafers. This was accomplished using high numerical aperture optics, a variable wavelength nanosecond laser source, and three-dimensional motorized precision stage control.
The focus of this work is the design and understanding of a novel semiconductor wafering technique that utilizes the nonlinear absorption properties of band-gapped materials to achieve bulk (subsurface) morphological changes in matter using highly focused laser light. A method and tool was designed and developed to form controlled damage regions in the bulk of a crystalline sapphire wafer leaving the surfaces unaltered. The controllability of the subsurface damage geometry was investigated, and the effect of numerical aperture of the focusing optic, energy per pulse, wavelength, and number of pulses was characterized for a nanosecond pulse length variable wavelength Nd:YAG OPO laser.
A novel model was developed to describe the geometry of laser induced morphological changes in the bulk of semiconducting materials for nanosecond pulse lengths. The beam propagation aspect of the model was based on ray-optics, and the full Keldysh multiphoton photoionization theory in conjuncture with Thornber's and Drude's models for impact ionization were used to describe high fluence laser light absorption and carrier generation ultimately resulting in permanent material modification though strong electron-plasma absorption and plasma melting. Although the electron-plasma description of laser damage formation is usually reserved for extremely short laser pulses (<20 ps), this work shows that it can be adapted for longer pulses of up to tens of nanoseconds.
In addition to a model describing damage formation of sub-band gap energy laser light in semiconducting and transparent crystalline dielectrics, a novel nanosecond laser process was successfully realized to generate a thin plane of damage in the bulk of sapphire wafers. This was accomplished using high numerical aperture optics, a variable wavelength nanosecond laser source, and three-dimensional motorized precision stage control.
ContributorsLeBeau, James (Author) / Bowden, Stuart (Thesis advisor) / Honsberg, Christiana (Committee member) / Bertoni, Mariana (Committee member) / Cotter, Jeffrey (Committee member) / Arizona State University (Publisher)
Created2015
Description
With the application of reverse osmosis (RO) membranes in the wastewater treatment and seawater desalination, the limitation of flux and fouling problems of RO have gained more attention from researchers. Because of the tunable structure and physicochemical properties of nanomaterials, it is a suitable material that can be used to incorporate with RO to change the membrane performances. Silver is biocidal, which has been used in a variety of consumer products. Recent studies showed that fabricating silver nanoparticles (AgNPs) on membrane surfaces can mitigate the biofouling problem on the membrane. Studies have shown that Ag released from the membrane in the form of either Ag ions or AgNP will accelerate the antimicrobial activity of the membrane. However, the silver release from the membrane will lower the silver loading on the membrane, which will eventually shorten the antimicrobial activity lifetime of the membrane. Therefore, the silver leaching amount is a crucial parameter that needs to be determined for every type of Ag composite membrane.
This study is attempting to compare four different silver leaching test methods, to study the silver leaching potential of the silver impregnated membranes, conducting the advantages and disadvantages of the leaching methods. An In-situ reduction Ag loaded RO membrane was examined in this study. A custom waterjet test was established to create a high-velocity water flow to test the silver leaching from the nanocomposite membrane in a relative extreme environment. The batch leaching test was examined as the most common leaching test method for the silver composite membrane. The cross-flow filtration and dead-end test were also examined to compare the silver leaching amounts.
The silver coated membrane used in this experiment has an initial silver loading of 2.0± 0.51 ug/cm2. The mass balance was conducted for all of the leaching tests. For the batch test, water jet test, and dead-end filtration, the mass balances are all within 100±25%, which is acceptable in this experiment because of the variance of the initial silver loading on the membranes. A bad silver mass balance was observed at cross-flow filtration. Both of AgNP and Ag ions leached in the solution was examined in this experiment. The concentration of total silver leaching into solutions from the four leaching tests are all below the Secondary Drinking Water Standard for silver which is 100 ppb. The cross-flow test is the most aggressive leaching method, which has more than 80% of silver leached from the membrane after 50 hours of the test. The water jet (54 ± 6.9% of silver remaining) can cause higher silver leaching than batch test (85 ± 1.2% of silver remaining) in one-hour, and it can also cause both AgNP and Ag ions leaching from the membrane, which is closer to the leaching condition in the cross-flow test.
This study is attempting to compare four different silver leaching test methods, to study the silver leaching potential of the silver impregnated membranes, conducting the advantages and disadvantages of the leaching methods. An In-situ reduction Ag loaded RO membrane was examined in this study. A custom waterjet test was established to create a high-velocity water flow to test the silver leaching from the nanocomposite membrane in a relative extreme environment. The batch leaching test was examined as the most common leaching test method for the silver composite membrane. The cross-flow filtration and dead-end test were also examined to compare the silver leaching amounts.
The silver coated membrane used in this experiment has an initial silver loading of 2.0± 0.51 ug/cm2. The mass balance was conducted for all of the leaching tests. For the batch test, water jet test, and dead-end filtration, the mass balances are all within 100±25%, which is acceptable in this experiment because of the variance of the initial silver loading on the membranes. A bad silver mass balance was observed at cross-flow filtration. Both of AgNP and Ag ions leached in the solution was examined in this experiment. The concentration of total silver leaching into solutions from the four leaching tests are all below the Secondary Drinking Water Standard for silver which is 100 ppb. The cross-flow test is the most aggressive leaching method, which has more than 80% of silver leached from the membrane after 50 hours of the test. The water jet (54 ± 6.9% of silver remaining) can cause higher silver leaching than batch test (85 ± 1.2% of silver remaining) in one-hour, and it can also cause both AgNP and Ag ions leaching from the membrane, which is closer to the leaching condition in the cross-flow test.
ContributorsHan, Bingru (Author) / Westerhoff, Paul (Thesis advisor) / Perreault, Francois (Committee member) / Sinha, Shahnawaz (Committee member) / Arizona State University (Publisher)
Created2017
Description
The volume of end-of-life photovoltaic (PV) modules is increasing as the global PV market increases, and the global PV waste streams are expected to reach 250,000 metric tons by the end of 2020. If the recycling processes are not in place, there would be 60 million tons of end-of-life PV modules lying in the landfills by 2050, that may not become a not-so-sustainable way of sourcing energy since all PV modules could contain certain amount of toxic substances. Currently in the United States, PV modules are categorized as general waste and can be disposed in landfills. However, potential leaching of toxic chemicals and materials, if any, from broken end-of-life modules may pose health or environmental risks. There is no standard procedure to remove samples from PV modules for chemical toxicity testing in the Toxicity Characteristic Leaching Procedure (TCLP) laboratories as per EPA 1311 standard. The main objective of this thesis is to develop an unbiased sampling approach for the TCLP testing of PV modules. The TCLP testing was concentrated only for the laminate part of the modules, as they are already existing recycling technologies for the frame and junction box components of PV modules. Four different sample removal methods have been applied to the laminates of five different module manufacturers: coring approach, cell-cut approach, strip-cut approach, and hybrid approach. These removed samples were sent to two different TCLP laboratories, and TCLP results were tested for repeatability within a lab and reproducibility between the labs. The pros and cons of each sample removal method have been explored and the influence of sample removal methods on the variability of TCLP results has been discussed. To reduce the variability of TCLP results to an acceptable level, additional improvements in the coring approach, the best of the four tested options, are still needed.
ContributorsLeslie, Joswin (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Srinivasan, Devarajan (Committee member) / Kuitche, Joseph (Committee member) / Arizona State University (Publisher)
Created2018