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- Genre: Academic theses
- Genre: Masters Thesis
- Creators: Jiao, Yang
- Creators: Bakkaloglu, Bertan
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Description
Pulse Density Modulation- (PDM-) based class-D amplifiers can reduce non-linearity and tonal content due to carrier signal in Pulse Width Modulation - (PWM-) based amplifiers. However, their low-voltage analog implementations also require a linear- loop filter and a quantizer. A PDM-based class-D audio amplifier using a frequency-domain quantization is presented in this paper. The digital-intensive frequency domain approach achieves high linearity under low-supply regimes. An analog comparator and a single-bit quantizer are replaced with a Current-Controlled Oscillator- (ICO-) based frequency discriminator. By using the ICO as a phase integrator, a third-order noise shaping is achieved using only two analog integrators. A single-loop, singlebit class-D audio amplifier is presented with an H-bridge switching power stage, which is designed and fabricated on a 0.18 um CMOS process, with 6 layers of metal achieving a total harmonic distortion plus noise (THD+N) of 0.065% and a peak power efficiency of 80% while driving a 4-ohms loudspeaker load. The amplifier can deliver the output power of 280 mW.
ContributorsLee, Junghan (Author) / Bakkaloglu, Bertan (Thesis advisor) / Kiaei, Sayfe (Committee member) / Ozev, Sule (Committee member) / Song, Hongjiang (Committee member) / Arizona State University (Publisher)
Created2011
Description
ABSTRACT To meet stringent market demands, manufacturers must produce Radio Frequency (RF) transceivers that provide wireless communication between electronic components used in consumer products at extremely low cost. Semiconductor manufacturers are in a steady race to increase integration levels through advanced system-on-chip (SoC) technology. The testing costs of these devices tend to increase with higher integration levels. As the integration levels increase and the devices get faster, the need for high-calibre low cost test equipment become highly dominant. However testing the overall system becomes harder and more expensive. Traditionally, the transceiver system is tested in two steps utilizing high-calibre RF instrumentation and mixed-signal testers, with separate measurement setups for transmitter and receiver paths. Impairments in the RF front-end, such as the I/Q gain and phase imbalance and nonlinearity, severely affect the performance of the device. The transceiver needs to be characterized in terms of these impairments in order to guarantee good performance and specification requirements. The motivation factor for this thesis is to come up with a low cost and computationally simple extraction technique of these impairments. In the proposed extraction technique, the mapping between transmitter input signals and receiver output signals are used to extract the impairment and nonlinearity parameters. This is done with the help of detailed mathematical modeling of the transceiver. While the overall behavior is nonlinear, both linear and nonlinear models to be used under different test setups are developed. A two step extraction technique has been proposed in this work. The extraction of system parameters is performed by using the mathematical model developed along with a genetic algorithm implemented in MATLAB. The technique yields good extraction results with reasonable error. It uses simple mathematical operation which makes the extraction fast and computationally simple when compared to other existing techniques such as traditional two step dedicated approach, Nonlinear Solver (NLS) approach, etc. It employs frequency domain analysis of low frequency input and output signals, over cumbersome time domain computations. Thus a test method, including detailed behavioral modeling of the transceiver, appropriate test signal design along with a simple algorithm for extraction is presented.
ContributorsSreenivassan, Aiswariya (Author) / Ozev, Sule (Thesis advisor) / Kiaei, Sayfe (Committee member) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2011
Description
The partially-depleted (PD) silicon Metal Semiconductor Field Effect Transistor (MESFET) is becoming more and more attractive for analog and RF applications due to its high breakdown voltage. Compared to conventional CMOS high voltage transistors, the silicon MESFET can be fabricated in commercial standard Silicon-on-Insulator (SOI) CMOS foundries without any change to the process. The transition frequency of the device is demonstrated to be 45GHz, which makes the MESFET suitable for applications in high power RF power amplifier designs. Also, high breakdown voltage and low turn-on resistance make it the ideal choice for switches in the switching regulator designs. One of the anticipated applications of the MESFET is for the pass device for a low dropout linear regulator. Conventional NMOS and PMOS linear regulators suffer from high dropout voltage, low bandwidth and poor stability issues. In contrast, the N-MESFET pass transistor can provide an ultra-low dropout voltage and high bandwidth without the need for an external compensation capacitor to ensure stability. In this thesis, the design theory and problems of the conventional linear regulators are discussed. N-MESFET low dropout regulators are evaluated and characterized. The error amplifier used a folded cascode architecture with gain boosting. The source follower topology is utilized as the buffer to sink the gate leakage current from the MESFET. A shunt-feedback transistor is added to reduce the output impedance and provide the current adaptively. Measurement results show that the dropout voltage is less than 150 mV for a 1A load current at 1.8V output. Radiation measurements were done for discrete MESFET and fully integrated LDO regulators, which demonstrate their radiation tolerance ability for aerospace applications.
ContributorsChen, Bo (Author) / Thornton, Trevor (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
ABSTRACT Ongoing research into wireless transceivers in the 60 GHz band is required to address the demand for high data rate communications systems at a frequency where signal propagation is challenging even over short ranges. This thesis proposes a mixer architecture in Complementary Metal Oxide Semiconductor (CMOS) technology that uses a voltage controlled oscillator (VCO) operating at a fractional multiple of the desired output signal. The proposed topology is different from conventional subharmonic mixing in that the oscillator phase generation circuitry usually required for such a circuit is unnecessary. Analysis and simulations are performed on the proposed mixer circuit in an IBM 90 nm RF process on a 1.2 V supply. A typical RF transmitter system is considered in determining the block requirements needed for the mixer to meet the IEEE 802.11ad 60 GHz Draft Physical Layer Specification. The proposed circuit has a conversion loss of 21 dB at 60 GHz with a 5 dBm LO power at 20 GHz. Input-referred third-order intercept point (IIP3) is 2.93 dBm. The gain and linearity of the proposed mixer are sufficient for Orthogonal Frequency Division Multiplexing (OFDM) modulation at 60 GHz with a transmitted data rate of over 4 Gbps.
ContributorsMartino, Todd Jeffrey (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Aberle, James T., 1961- (Committee member) / Arizona State University (Publisher)
Created2010
Description
The constant scaling of supply voltages in state-of-the-art CMOS processes has led to severe limitations for many analog circuit applications. Some CMOS processes have addressed this issue by adding high voltage MOSFETs to their process. Although it can be a completely viable solution, it usually requires a changing of the process flow or adding additional steps, which in turn, leads to an increase in fabrication costs. Si-MESFETs (silicon-metal-semiconductor-field-effect-transistors) from Arizona State University (ASU) on the other hand, have an inherent high voltage capability and can be added to any silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) CMOS process free of cost. This has been proved at five different commercial foundries on technologies ranging from 0.5 to 0.15 μm. Another critical issue facing CMOS processes on insulated substrates is the scaling of the thin silicon channel. Consequently, the future direction of SOI/SOS CMOS transistors may trend away from partially depleted (PD) transistors and towards fully depleted (FD) devices. FD-CMOS are already being implemented in multiple applications due to their very low power capability. Since the FD-CMOS market only figures to grow, it is appropriate that MESFETs also be developed for these processes. The beginning of this thesis will focus on the device aspects of both PD and FD-MESFETs including their layout structure, DC and RF characteristics, and breakdown voltage. The second half will then shift the focus towards implementing both types of MESFETs in an analog circuit application. Aside from their high breakdown ability, MESFETs also feature depletion mode operation, easy to adjust but well controlled threshold voltages, and fT's up to 45 GHz. Those unique characteristics can allow certain designs that were previously difficult to implement or prohibitively expensive using conventional technologies to now be achieved. One such application which benefits is low dropout regulators (LDO). By utilizing an n-channel MESFET as the pass transistor, a LDO featuring very low dropout voltage, fast transient response, and stable operation can be achieved without an external capacitance. With the focus of this thesis being MESFET based LDOs, the device discussion will be mostly tailored towards optimally designing MESFETs for this particular application.
ContributorsLepkowski, William (Author) / Thornton, Trevor (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2010
Description
Microstructure refinement and alloy additions are considered potential routes to increase high temperature performance of existing metallic superalloys used under extreme conditions. Nanocrystalline (NC) Cu-10at%Ta exhibits such improvements over microstructurally unstable NC metals, leading to enhanced creep behavior compared to its coarse-grained (CG) counterparts. However, the low melting point of Cu compared to other FCC metals, e.g., Ni, might lead to an early onset of diffusional creep mechanisms. Thus, this research seeks to study the thermo-mechanical behavior and stability of hierarchical (prepared using arc-melting) and NC (prepared by collaborators through powder pressing and annealing) Ni-Y-Zr alloys where Zr is expected to provide solid solution and grain boundary strengthening in hierarchical and NC alloys, respectively, while Ni-Y and Ni-Zr intermetallic precipitates (IMCs) would provide kinetic stability. Hierarchical alloys had microstructures stable up to 1100 °C with ultrafine eutectic of ~300 nm, dendritic arm spacing of ~10 μm, and grain size ~1-2 mm. Room temperature hardness tests along with uniaxial compression performed at 25 and 600 °C revealed that microhardness and yield strength of hierarchical alloys with small amounts of Y (0.5-1wt%) and Zr (1.5-3 wt%) were comparable to Ni-superalloys, due to the hierarchical microstructure and potential presence of nanoscale IMCs. In contrast, NC alloys of the same composition were found to be twice as hard as the hierarchical alloys. Creep tests at 0.5 homologous temperature showed active Coble creep mechanisms in hierarchical alloys at low stresses with creep rates slower than Fe-based superalloys and dislocation creep mechanisms at higher stresses. Creep in NC alloys at lower stresses was only 20 times faster than hierarchical alloys, with the difference in grain size ranging from 10^3 to 10^6 times at the same temperature. These NC alloys showed enhanced creep properties over other NC metals and are expected to have rates equal to or improved over the CG hierarchical alloys with ECAP processing techniques. Lastly, the in-situ wide-angle x-ray scattering (WAXS) measurements during quasi-static and creep tests implied stresses being carried mostly by the matrix before yielding and in the primary creep stage, respectively, while relaxation was observed in Ni5Zr for both hierarchical and NC alloys. Beyond yielding and in the secondary creep stage, lattice strains reached a steady state, thereby, an equilibrium between plastic strain rates was achieved across different phases, so that deformation reaches a saturation state where strain hardening effects are compensated by recovery mechanisms.
ContributorsSharma, Shruti (Author) / Peralta, Pedro (Thesis advisor) / Alford, Terry (Committee member) / Jiao, Yang (Committee member) / Solanki, Kiran (Committee member) / Arizona State University (Publisher)
Created2022
Description
Intelligent engineering designs require an accurate understanding of material behavior, since any uncertainties or gaps in knowledge must be counterbalanced with heightened factors of safety, leading to overdesign. Therefore, building better structures and pushing the performance of new components requires an improved understanding of the thermomechanical response of advanced materials under service conditions. This dissertation provides fundamental investigations of several advanced materials: thermoset polymers, a common matrix material for fiber-reinforced composites and nanocomposites; aluminum alloy 7075-T6 (AA7075-T6), a high-performance aerospace material; and ceramic matrix composites (CMCs), an advanced composite for extreme-temperature applications. To understand matrix interactions with various interfaces and nanoinclusions at their fundamental scale, the properties of thermoset polymers are studied at the atomistic scale. An improved proximity-based molecular dynamics (MD) technique for modeling the crosslinking of thermoset polymers is carefully established, enabling realistic curing simulations through its ability to dynamically and probabilistically perform complex topology transformations. The proximity-based MD curing methodology is then used to explore damage initiation and the local anisotropic evolution of mechanical properties in thermoset polymers under uniaxial tension with an emphasis on changes in stiffness through a series of tensile loading, unloading, and reloading experiments. Aluminum alloys in aerospace applications often require a fatigue life of over 109 cycles, which is well over the number of cycles that can be practically tested using conventional fatigue testing equipment. In order to study these high-life regimes, a detailed ultrasonic cycle fatigue study is presented for AA7075-T6 under fully reversed tension-compression loading. The geometric sensitivity, frequency effects, size effects, surface roughness effects, and the corresponding failure mechanisms for ultrasonic fatigue across different fatigue regimes are investigated. Finally, because CMCs are utilized in extreme environments, oxidation plays an important role in their degradation. A multiphysics modeling methodology is thus developed to address the complex coupling between oxidation, mechanical stress, and oxygen diffusion in heterogeneous carbon fiber-reinforced CMC microstructures.
ContributorsSchichtel, Jacob (Author) / Chattopadhyay, Aditi (Thesis advisor) / Dai, Lenore (Committee member) / Ghoshal, Anindya (Committee member) / Huang, Huei-Ping (Committee member) / Jiao, Yang (Committee member) / Oswald, Jay (Committee member) / Arizona State University (Publisher)
Created2022
Description
Damage and failure of advanced composite materials and structures are often manifestations of nonlinear deformation that involve multiple mechanisms and their interactions at the constituent length scale. The presence and interactions of inelastic microscale constituents strongly influence the macroscopic damage anisotropy and useful residual life. The mechano-chemical interactions between constituents at the atomistic length scale play a more critical role with nanoengineered composites. Therefore, it is desirable to link composite behavior to specific microscopic constituent properties explicitly and lower length scale features using high-fidelity multiscale modeling techniques.In the research presented in this dissertation, an atomistically-informed multiscale modeling framework is developed to investigate damage evolution and failure in composites with radially-grown carbon nanotube (CNT) architecture. A continuum damage mechanics (CDM) model for the radially-grown CNT interphase region is developed with evolution equations derived using atomistic simulations. The developed model is integrated within a high-fidelity generalized method of cells (HFGMC) micromechanics theory and is used to parametrically investigate the influence of various input micro and nanoscale parameters on the mechanical properties, such as elastic stiffness, strength, and toughness. In addition, the inter-fiber stresses and the onset of damage in the presence of the interphase region are investigated to better understand the energy dissipation mechanisms that attribute to the enhancement in the macroscopic out-of-plane strength and toughness. Note that the HFGMC theory relies heavily on the description of microscale features and requires many internal variables, leading to high computational costs. Therefore, a novel reduced-order model (ROM) is also developed to surrogate full-field nonlinear HFGMC simulations and decrease the computational time and memory requirements of concurrent multiscale simulations significantly.
The accurate prediction of composite sandwich materials' thermal stability and durability remains a challenge due to the variability of thermal-related material coefficients at different temperatures and the extensive use of bonded fittings. Consequently, the dissertation also investigates the thermomechanical performance of a complex composite sandwich space structure subject to thermal cycling. Computational finite element (FE) simulations are used to investigate the intrinsic failure mechanisms and damage precursors in honeycomb core composite sandwich structures with adhesively bonded fittings.
ContributorsVenkatesan, Karthik Rajan (Author) / Chattopadhyay, Aditi (Thesis advisor) / Liu, Yongming (Committee member) / Jiao, Yang (Committee member) / Yekani Fard, Masoud (Committee member) / Stoumbos, Tom (Committee member) / Arizona State University (Publisher)
Created2021
Description
The design of energy absorbing structures is driven by application specific requirements like the amount of energy to be absorbed, maximum transmitted stress that is permissible, stroke length, and available enclosing space. Cellular structures like foams are commonly leveraged in nature for energy absorption and have also found use in engineering applications. With the possibility of manufacturing complex cellular shapes using additive manufacturing technologies, there is an opportunity to explore new topologies that improve energy absorption performance. This thesis aims to systematically understand the relationships between four key elements: (i) unit cell topology, (ii) material composition, (iii) relative density, and (iv) fields; and energy absorption behavior, and then leverage this understanding to develop, implement and validate a methodology to design the ideal cellular structure energy absorber. After a review of the literature in the domain of additively manufactured cellular materials for energy absorption, results from quasi-static compression of six cellular structures (hexagonal honeycomb, auxetic and Voronoi lattice, and diamond, Gyroid, and Schwarz-P) manufactured out of AlSi10Mg and Nylon-12. These cellular structures were compared to each other in the context of four design-relevant metrics to understand the influence of cell design on the deformation and failure behavior. Three new and revised metrics for energy absorption were proposed to enable more meaningful comparisons and subsequent design selection. Triply Periodic Minimal Surface (TPMS) structures were found to have the most promising overall performance and formed the basis for the numerical investigation of the effect of fields on the energy absorption performance of TPMS structures. A continuum shell-based methodology was developed to analyze the large deformation behavior of field-driven variable thickness TPMS structures and validated against experimental data. A range of analytical and stochastic fields were then evaluated that modified the TPMS structure, some of which were found to be effective in enhancing energy absorption behavior in the structures while retaining the same relative density. Combining findings from studies on the role of cell geometry, composition, relative density, and fields, this thesis concludes with the development of a design framework that can enable the formulation of cellular material energy absorbers with idealized behavior.
ContributorsShinde, Mandar (Author) / Bhate, Dhruv (Thesis advisor) / Peralta, Pedro (Committee member) / Liu, Yongming (Committee member) / Jiao, Yang (Committee member) / Kwon, Beomjin (Committee member) / Arizona State University (Publisher)
Created2023
Description
High-entropy alloys (HEAs) is a new class of materials which have been studied heavily due to their special mechanical properties. HEAs refers to alloys with multiple equimolar or nearly equimolar elements. HEAs show exceptional and attractive properties currently absent from conventional alloys, which make them the center of intense investigation. HEAs obtain their properties from four core effects that they exhibit and most of the work on them have been dedicated to study their mechanical properties. In contrast, little or no research have gone into studying the functional or even thermal properties of HEAs. Some HEAs have also shown exceptional or very high melting points. According to the definition of HEAs, Si-Ge-Sn alloys with equal or comparable concentrations of the three group IV elements belong to the category of HEAs. Thus, the equimolar components of Si-Ge-Sn alloys probably allow their atomic structures to display the same fundamental effects of metallic HEAs. The experimental fabrication of such alloys has been proven to be very difficult, which is mainly due to differences between the properties of their constituent elements, as indicated from their binary phase diagrams. However, previous computational studies have shown that SiGeSn HEAs have some very interesting properties, such as high electrical conductivity, low thermal conductivity and semiconducting properties. In this work, going for a complete characterization of the SiGeSn HEA properties, the melting point of this alloy is studied using classical molecular dynamics (MD) simulations and density functional theory (DFT) calculations. The aim is to investigate the effects of high Sn content in this alloy on the melting point compared with the traditional SiGe alloys. Classical MD simulations results strongly indicates that none of the available empirical potentials is able to predict accurate or reasonable melting points for SiGeSn HEAs and most of its subsystems. DFT calculations results show that SiGeSn HEA have a melting point which represent the mean value of its constituent elements and that no special deviations are found. This work contributes to the study of SiGeSn HEA properties, which can serve as guidance before the successful experimental fabrication of this alloy.
ContributorsAlqaisi, Ahmad Madhat Odeh (Author) / Hong, Qi-Jun (Thesis advisor) / Zhuang, Houlong (Thesis advisor) / Jiao, Yang (Committee member) / Arizona State University (Publisher)
Created2023