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Description
Aluminum alloys and their composites are attractive materials for applications requiring high strength-to-weight ratios and reasonable cost. Many of these applications, such as those in the aerospace industry, undergo fatigue loading. An understanding of the microstructural damage that occurs in these materials is critical in assessing their fatigue resistance. Two

Aluminum alloys and their composites are attractive materials for applications requiring high strength-to-weight ratios and reasonable cost. Many of these applications, such as those in the aerospace industry, undergo fatigue loading. An understanding of the microstructural damage that occurs in these materials is critical in assessing their fatigue resistance. Two distinct experimental studies were performed to further the understanding of fatigue damage mechanisms in aluminum alloys and their composites, specifically fracture and plasticity. Fatigue resistance of metal matrix composites (MMCs) depends on many aspects of composite microstructure. Fatigue crack growth behavior is particularly dependent on the reinforcement characteristics and matrix microstructure. The goal of this work was to obtain a fundamental understanding of fatigue crack growth behavior in SiC particle-reinforced 2080 Al alloy composites. In situ X-ray synchrotron tomography was performed on two samples at low (R=0.1) and at high (R=0.6) R-ratios. The resulting reconstructed images were used to obtain three-dimensional (3D) rendering of the particles and fatigue crack. Behaviors of the particles and crack, as well as their interaction, were analyzed and quantified. Four-dimensional (4D) visual representations were constructed to aid in the overall understanding of damage evolution. During fatigue crack growth in ductile materials, a plastic zone is created in the region surrounding the crack tip. Knowledge of the plastic zone is important for the understanding of fatigue crack formation as well as subsequent growth behavior. The goal of this work was to quantify the 3D size and shape of the plastic zone in 7075 Al alloys. X-ray synchrotron tomography and Laue microdiffraction were used to non-destructively characterize the volume surrounding a fatigue crack tip. The precise 3D crack profile was segmented from the reconstructed tomography data. Depth-resolved Laue patterns were obtained using differential-aperture X-ray structural microscopy (DAXM), from which peak-broadening characteristics were quantified. Plasticity, as determined by the broadening of diffracted peaks, was mapped in 3D. Two-dimensional (2D) maps of plasticity were directly compared to the corresponding tomography slices. A 3D representation of the plastic zone surrounding the fatigue crack was generated by superimposing the mapped plasticity on the 3D crack profile.
ContributorsHruby, Peter (Author) / Chawla, Nikhilesh (Thesis advisor) / Solanki, Kiran (Committee member) / Liu, Yongming (Committee member) / Arizona State University (Publisher)
Created2014
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Description
ABSTRACT To meet stringent market demands, manufacturers must produce Radio Frequency (RF) transceivers that provide wireless communication between electronic components used in consumer products at extremely low cost. Semiconductor manufacturers are in a steady race to increase integration levels through advanced system-on-chip (SoC) technology. The testing costs of these devices

ABSTRACT To meet stringent market demands, manufacturers must produce Radio Frequency (RF) transceivers that provide wireless communication between electronic components used in consumer products at extremely low cost. Semiconductor manufacturers are in a steady race to increase integration levels through advanced system-on-chip (SoC) technology. The testing costs of these devices tend to increase with higher integration levels. As the integration levels increase and the devices get faster, the need for high-calibre low cost test equipment become highly dominant. However testing the overall system becomes harder and more expensive. Traditionally, the transceiver system is tested in two steps utilizing high-calibre RF instrumentation and mixed-signal testers, with separate measurement setups for transmitter and receiver paths. Impairments in the RF front-end, such as the I/Q gain and phase imbalance and nonlinearity, severely affect the performance of the device. The transceiver needs to be characterized in terms of these impairments in order to guarantee good performance and specification requirements. The motivation factor for this thesis is to come up with a low cost and computationally simple extraction technique of these impairments. In the proposed extraction technique, the mapping between transmitter input signals and receiver output signals are used to extract the impairment and nonlinearity parameters. This is done with the help of detailed mathematical modeling of the transceiver. While the overall behavior is nonlinear, both linear and nonlinear models to be used under different test setups are developed. A two step extraction technique has been proposed in this work. The extraction of system parameters is performed by using the mathematical model developed along with a genetic algorithm implemented in MATLAB. The technique yields good extraction results with reasonable error. It uses simple mathematical operation which makes the extraction fast and computationally simple when compared to other existing techniques such as traditional two step dedicated approach, Nonlinear Solver (NLS) approach, etc. It employs frequency domain analysis of low frequency input and output signals, over cumbersome time domain computations. Thus a test method, including detailed behavioral modeling of the transceiver, appropriate test signal design along with a simple algorithm for extraction is presented.
ContributorsSreenivassan, Aiswariya (Author) / Ozev, Sule (Thesis advisor) / Kiaei, Sayfe (Committee member) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2011
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Description
Modern Complex electronic system include multiple power domains and drastically varying power consumption patterns, requiring the use of multiple power conversion and regulation units. High frequency switching converters have been gaining prominence in the DC-DC converter market due to their high efficiency. Unfortunately, they are all subject to higher process

Modern Complex electronic system include multiple power domains and drastically varying power consumption patterns, requiring the use of multiple power conversion and regulation units. High frequency switching converters have been gaining prominence in the DC-DC converter market due to their high efficiency. Unfortunately, they are all subject to higher process variations jeopardizing stable operation of the power supply.

This research mainly focus on the technique to track changes in the dynamic loop characteristics of the DC-DC converters without disturbing the normal mode of operation using a white noise based excitation and correlation. White noise excitation is generated via pseudo random disturbance at reference and PWM input of the converter with the test signal being spread over a wide bandwidth, below the converter noise and ripple floor. Test signal analysis is achieved by correlating the pseudo-random input sequence with the output response and thereby accumulating the desired behavior over time and pulling it above the noise floor of the measurement set-up. An off-the shelf power converter, LM27402 is used as the DUT for the experimental verification. Experimental results show that the proposed technique can estimate converter's natural frequency and Q-factor within ±2.5% and ±0.7% error margin respectively, over changes in load inductance and capacitance.
ContributorsBakliwal, Priyanka (Author) / Ozev, Sule (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2015
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Description
The modern era of consumer electronics is dominated by compact, portable, affordable smartphones and wearable computing devices. Power management integrated circuits (PMICs) play a crucial role in on-chip power management, extending battery life and efficiency of integrated analog, radio-frequency (RF), and mixed-signal cores. Low-dropout (LDO) regulators are commonly used to

The modern era of consumer electronics is dominated by compact, portable, affordable smartphones and wearable computing devices. Power management integrated circuits (PMICs) play a crucial role in on-chip power management, extending battery life and efficiency of integrated analog, radio-frequency (RF), and mixed-signal cores. Low-dropout (LDO) regulators are commonly used to provide clean supply for low voltage integrated circuits, where point-of-load regulation is important. In System-On-Chip (SoC) applications, digital circuits can change their mode of operation regularly at a very high speed, imposing various load transient conditions for the regulator. These quick changes of load create a glitch in LDO output voltage, which hamper performance of the digital circuits unfavorably. For an LDO designer, minimizing output voltage variation and speeding up voltage glitch settling is an important task.

The presented research introduces two fully integrated LDO voltage regulators for SoC applications. N-type Metal-Oxide-Semiconductor (NMOS) power transistor based operation achieves high bandwidth owing to the source follower configuration of the regulation loop. A low input impedance and high output impedance error amplifier ensures wide regulation loop bandwidth and high gain. Current-reused dynamic biasing technique has been employed to increase slew-rate at the gate of power transistor during full-load variations, by a factor of two. Three design variations for a 1-1.8 V, 50 mA NMOS LDO voltage regulator have been implemented in a 180 nm Mixed-mode/RF process. The whole LDO core consumes 0.130 mA of nominal quiescent ground current at 50 mA load and occupies 0.21 mm x mm. LDO has a dropout voltage of 200 mV and is able to recover in 30 ns from a 65 mV of undershoot for 0-50 pF of on-chip load capacitance.
ContributorsDesai, Chirag (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Seo, Jae-Sun (Committee member) / Arizona State University (Publisher)
Created2016
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Description
Characterization and modeling of deformation and failure in metallic materials under extreme conditions, such as the high loads and strain rates found under shock loading due to explosive detonation and high velocity-impacts, are extremely important for a wide variety of military and industrial applications. When a shock wave causes stress

Characterization and modeling of deformation and failure in metallic materials under extreme conditions, such as the high loads and strain rates found under shock loading due to explosive detonation and high velocity-impacts, are extremely important for a wide variety of military and industrial applications. When a shock wave causes stress in a material that exceeds the elastic limit, plasticity and eventually spallation occur in the material. The process of spall fracture, which in ductile materials stems from strain localization, void nucleation, growth and coalescence, can be caused by microstructural heterogeneity. The analysis of void nucleation performed from a microstructurally explicit simulation of a spall damage evolution in a multicrystalline copper indicated triple junctions as the preferred sites for incipient damage nucleation revealing 75% of them with at least two grain boundaries with misorientation angle between 20-55°. The analysis suggested the nature of the boundaries connecting at a triple junction is an indicator of their tendency to localize spall damage. The results also showed that damage propagated preferentially into one of the high angle boundaries after voids nucleate at triple junctions. Recently the Rayleigh-Taylor Instability (RTI) and the Richtmyer-Meshkov Instability (RMI) have been used to deduce dynamic material strength at very high pressures and strain rates. The RMI is used in this work since it allows using precise diagnostics such as Transient Imaging Displacement Interferometry (TIDI) due to its slower linear growth rate. The Preston-Tonks-Wallace (PTW) model is used to study the effects of dynamic strength on the behavior of samples with a fed-thru RMI, induced via direct laser drive on a perturbed surface, on stability of the shock front and the dynamic evolution of the amplitudes and velocities of the perturbation imprinted on the back (flat) surface by the perturbed shock front. Simulation results clearly showed that the amplitude of the hydrodynamic instability increases with a decrease in strength and vice versa and that the amplitude of the perturbed shock front produced by the fed-thru RMI is also affected by strength in the same way, which provides an alternative to amplitude measurements to study strength effects under dynamic conditions. Simulation results also indicate the presence of second harmonics in the surface perturbation after a certain time, which were also affected by the material strength.
ContributorsGautam, Sudrishti (Author) / Peralta, Pedro (Thesis advisor) / Oswald, Jay (Committee member) / Solanki, Kiran (Committee member) / Arizona State University (Publisher)
Created2016
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Description
Structural stability and performance of structural materials is important for energy production, whether renewable or non renewable, to have uninterrupted energy supply, that is economically feasible and safe. High temperature metallic materials used in the turbines of AORA, an Israel-based clean energy producer, often experience high temperature, high stress and

Structural stability and performance of structural materials is important for energy production, whether renewable or non renewable, to have uninterrupted energy supply, that is economically feasible and safe. High temperature metallic materials used in the turbines of AORA, an Israel-based clean energy producer, often experience high temperature, high stress and foreign object damage (FOD). In this study, efforts were made to study the effects of FOD on the fatigue life of these materials and to understand their failure mechanisms. The foreign objects/debris recovered by AORA were characterized using Powder X-ray Diffraction (XRD) and Energy Dispersive Spectroscopy (EDS) to identify composition and phases. To perform foreign object damage experiment a gas gun was built and results of XRD and EDS were used to select particles to mimic FOD in lab experiments for two materials of interest to AORA: Hastelloy X and SS 347. Electron Backscattering Diffraction, hardness and tensile tests were also performed to characterize microstructure and mechanical properties. Fatigue tests using at high temperature were performed on dog bone samples with and without FOD and the fracture surfaces and well as the regions affected by FOD were analyzed using Scanning Electron Microscopy (SEM) to understand the failure mechanism. The findings of these study indicate that FOD is causing multiple secondary cracks at and around the impact sites, which can potentially grow to coalesce and remove pieces of material, and the multisite damage could also lead to lower fatigue lives, despite the fact that the FOD site was not always the most favorable for initiation of the fatal fatigue crack. It was also seen by the effect of FOD on fatigue life that SS 347 is more susceptible to FOD than Hastelloy X.
ContributorsDobaria, Nirmal (Author) / Peralta, Pedro (Thesis advisor) / Sieradzki, Karl (Committee member) / Solanki, Kiran (Committee member) / Arizona State University (Publisher)
Created2016
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Description
This thesis presents a power harvesting system combining energy from sub-cells of

multi-junction photovoltaic (MJ-PV) cells. A dual-input, inductor time-sharing boost

converter in continuous conduction mode (CCM) is proposed. A hysteresis inductor current

regulation in designed to reduce cross regulation caused by inductor-sharing in CCM. A

modified hill-climbing algorithm is implemented to achieve maximum

This thesis presents a power harvesting system combining energy from sub-cells of

multi-junction photovoltaic (MJ-PV) cells. A dual-input, inductor time-sharing boost

converter in continuous conduction mode (CCM) is proposed. A hysteresis inductor current

regulation in designed to reduce cross regulation caused by inductor-sharing in CCM. A

modified hill-climbing algorithm is implemented to achieve maximum power point

tracking (MPPT). A dual-path architecture is implemented to provide a regulated 1.8V

output. A proposed lossless current sensor monitors transient inductor current and a time-based power monitor is proposed to monitor PV power. The PV input provides power of

65mW. Measured results show that the peak efficiency achieved is around 85%. The

power switches and control circuits are implemented in standard 0.18um CMOS process.
ContributorsPeng, Qirong (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Ogras, Umit Y. (Committee member) / Arizona State University (Publisher)
Created2017
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Description
The use of solar energy to produce power has increased substantially in the past few decades. In an attempt to provide uninterrupted solar power, production plants may find themselves having to operate the systems at temperatures higher than the operational capacity of the materials used in many of their components,

The use of solar energy to produce power has increased substantially in the past few decades. In an attempt to provide uninterrupted solar power, production plants may find themselves having to operate the systems at temperatures higher than the operational capacity of the materials used in many of their components, which affects the microstructural and mechanical properties of those materials. Failures in components that have been exposed to these excessive temperatures have been observed during operations in the turbine used by AORA Solar Ltd. A particular component of interest was made of a material similar to the Ni-based superalloy Inconel 718 (IN 718), which was observed to have damage that is believed to have been initiated by Foreign Object Damage (FOD) and worsened by the high temperatures in the turbine. The potential links among the observed failure, FOD and the high temperatures of operation are investigated in this study.

IN718 is a precipitation hardened nickel superalloy with resistance to oxidation and ability to withstand high stresses over a wide range of temperatures. Several studies have been conducted to understand IN 718 tensile and fatigue properties at elevated temperatures (600- 950°C). However, this study focuses on understanding the behavior of IN718 with FOD induced by a stream of 50 μm Alumina particles at a velocity of 200 m/s. under high cycle fatigue at an elevated temperature of 1050 °C. Tensile tests were conducted for both as-received and heat treated (1050 °C in air for 8hrs) samples at room and high temperature. Fatigue tests were performed at heat treated samples at 1050 °C for samples with and without ablation. The test conditions were as similar as possible to the conditions in the AORA turbine. The results of the study provide an insight into tensile properties, fatigue properties and FOD. The results indicated a reduction in fatigue life for the samples with ablation damage, where crack nucleation occurred either at the edge or inside the ablation region and multisite cracking was observed under far field stresses that were the same than for pristine samples, which showed single cracks. Fracture surfaces indicate intergranular fracture, with the presence of secondary cracks and a lack of typical fatigue features, e.g., beach marks which was attributed to environmental effects and creep.
ContributorsShenoy, Sneha (Author) / Peralta, Pedro (Thesis advisor) / Solanki, Kiran (Committee member) / Sieradzki, Karl (Committee member) / Arizona State University (Publisher)
Created2017
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Description
The partially-depleted (PD) silicon Metal Semiconductor Field Effect Transistor (MESFET) is becoming more and more attractive for analog and RF applications due to its high breakdown voltage. Compared to conventional CMOS high voltage transistors, the silicon MESFET can be fabricated in commercial standard Silicon-on-Insulator (SOI) CMOS foundries without any change

The partially-depleted (PD) silicon Metal Semiconductor Field Effect Transistor (MESFET) is becoming more and more attractive for analog and RF applications due to its high breakdown voltage. Compared to conventional CMOS high voltage transistors, the silicon MESFET can be fabricated in commercial standard Silicon-on-Insulator (SOI) CMOS foundries without any change to the process. The transition frequency of the device is demonstrated to be 45GHz, which makes the MESFET suitable for applications in high power RF power amplifier designs. Also, high breakdown voltage and low turn-on resistance make it the ideal choice for switches in the switching regulator designs. One of the anticipated applications of the MESFET is for the pass device for a low dropout linear regulator. Conventional NMOS and PMOS linear regulators suffer from high dropout voltage, low bandwidth and poor stability issues. In contrast, the N-MESFET pass transistor can provide an ultra-low dropout voltage and high bandwidth without the need for an external compensation capacitor to ensure stability. In this thesis, the design theory and problems of the conventional linear regulators are discussed. N-MESFET low dropout regulators are evaluated and characterized. The error amplifier used a folded cascode architecture with gain boosting. The source follower topology is utilized as the buffer to sink the gate leakage current from the MESFET. A shunt-feedback transistor is added to reduce the output impedance and provide the current adaptively. Measurement results show that the dropout voltage is less than 150 mV for a 1A load current at 1.8V output. Radiation measurements were done for discrete MESFET and fully integrated LDO regulators, which demonstrate their radiation tolerance ability for aerospace applications.
ContributorsChen, Bo (Author) / Thornton, Trevor (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
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Description
ABSTRACT Ongoing research into wireless transceivers in the 60 GHz band is required to address the demand for high data rate communications systems at a frequency where signal propagation is challenging even over short ranges. This thesis proposes a mixer architecture in Complementary Metal Oxide Semiconductor (CMOS) technology that uses

ABSTRACT Ongoing research into wireless transceivers in the 60 GHz band is required to address the demand for high data rate communications systems at a frequency where signal propagation is challenging even over short ranges. This thesis proposes a mixer architecture in Complementary Metal Oxide Semiconductor (CMOS) technology that uses a voltage controlled oscillator (VCO) operating at a fractional multiple of the desired output signal. The proposed topology is different from conventional subharmonic mixing in that the oscillator phase generation circuitry usually required for such a circuit is unnecessary. Analysis and simulations are performed on the proposed mixer circuit in an IBM 90 nm RF process on a 1.2 V supply. A typical RF transmitter system is considered in determining the block requirements needed for the mixer to meet the IEEE 802.11ad 60 GHz Draft Physical Layer Specification. The proposed circuit has a conversion loss of 21 dB at 60 GHz with a 5 dBm LO power at 20 GHz. Input-referred third-order intercept point (IIP3) is 2.93 dBm. The gain and linearity of the proposed mixer are sufficient for Orthogonal Frequency Division Multiplexing (OFDM) modulation at 60 GHz with a transmitted data rate of over 4 Gbps.
ContributorsMartino, Todd Jeffrey (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Aberle, James T., 1961- (Committee member) / Arizona State University (Publisher)
Created2010