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Description
Nitride semiconductors have wide applications in electronics and optoelectronics technologies. Understanding the nature of the optical recombination process and its effects on luminescence efficiency is important for the development of novel devices. This dissertation deals with the optical properties of nitride semiconductors, including GaN epitaxial layers and more complex heterostructures. The emission characteristics are examined by cathodoluminescence spectroscopy and imaging, and are correlated with the structural and electrical properties studied by transmission electron microscopy and electron holography. Four major areas are covered in this dissertation, which are described next. The effect of strain on the emission characteristics in wurtzite GaN has been studied. The values of the residual strain in GaN epilayers with different dislocation densities are determined by x-ray diffraction, and the relationship between exciton emission energy and the in-plane residual strain is demonstrated. It shows that the emission energy increases withthe magnitude of the in-plane compressive strain. The temperature dependence of the emission characteristics in cubic GaN has been studied. It is observed that the exciton emission and donor-acceptor pair recombination behave differently with temperature. The donor-bound exciton binding energy has been measured to be 13 meV from the temperature dependence of the emission spectrum. It is also found that the ionization energies for both acceptors and donors are smaller in cubic compared with hexagonal structures, which should contribute to higher doping efficiencies. A comprehensive study on the structural and optical properties is presented for InGaN/GaN quantum wells emitting in the blue, green, and yellow regions of the electromagnetic spectrum. Transmission electron microscopy images indicate the presence of indium inhomogeneties which should be responsible for carrier localization. The temperature dependence of emission luminescence shows that the carrier localization effects become more significant with increasing emission wavelength. On the other hand, the effect of non-radiative recombination on luminescence efficiency also varies with the emission wavelength. The fast increase of the non-radiative recombination rate with temperature in the green emitting QWs contributes to the lower efficiency compared with the blue emitting QWs. The possible saturation of non-radiative recombination above 100 K may explain the unexpected high emission efficiency for the yellow emitting QWs Finally, the effects of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells emitting in visible spectral regions have been studied. A significant improvement of the emission efficiency is observed, which is associated with a blue shift in the emission energy, a reduced recombination lifetime, an increased spatial homogeneity in the luminescence, and a weaker internal field across the quantum wells. These are explained by a partial strain relaxation introduced by the InGaN underlayer, which is measured by reciprocal space mapping of the x-ray diffraction intensity.
ContributorsLi, Di (Author) / Ponce, Fernando (Thesis advisor) / Culbertson, Robert (Committee member) / Yu, Hongbin (Committee member) / Shumway, John (Committee member) / Menéndez, Jose (Committee member) / Arizona State University (Publisher)
Created2012
Description
Semiconductor nanowires (NWs) are one dimensional materials and have size quantization effect when the diameter is sufficiently small. They can serve as optical wave guides along the length direction and contain optically active gain at the same time. Due to these unique properties, NWs are now very promising and extensively studied for nanoscale optoelectronic applications. A systematic and comprehensive optical and microstructural study of several important infrared semiconductor NWs is presented in this thesis, which includes InAs, PbS, InGaAs, erbium chloride silicate and erbium silicate. Micro-photoluminescence (PL) and transmission electron microscope (TEM) were utilized in conjunction to characterize the optical and microstructure of these wires. The focus of this thesis is on optical study of semiconductor NWs in the mid-infrared wavelengths. First, differently structured InAs NWs grown using various methods were characterized and compared. Three main PL peaks which are below, near and above InAs bandgap, respectively, were observed. The octadecylthiol self-assembled monolayer was employed to passivate the surface of InAs NWs to eliminate or reduce the effects of the surface states. The band-edge emission from wurtzite-structured NWs was completely recovered after passivatoin. The passivated NWs showed very good stability in air and under heat. In the second part, mid-infrared optical study was conducted on PbS wires of subwavelength diameter and lasing was demonstrated under optical pumping. The PbS wires were grown on Si substrate using chemical vapor deposition and have a rock-salt cubic structure. Single-mode lasing at the wavelength of ~3000-4000 nm was obtained from single as-grown PbS wire up to the temperature of 115 K. PL characterization was also utilized to demonstrate the highest crystallinity of the vertical arrays of InP and InGaAs/InP composition-graded heterostructure NWs made by a top-down fabrication method. TEM-related measurements were performed to study the crystal structures and elemental compositions of the Er-compound core-shell NWs. The core-shell NWs consist of an orthorhombic-structured erbium chloride silicate shell and a cubic-structured silicon core. These NWs provide unique Si-compatible materials with emission at 1530 nm for optical communications and solid state lasers.
ContributorsSun, Minghua (Author) / Ning, Cun-Zheng (Thesis advisor) / Yu, Hongbin (Committee member) / Carpenter, Ray W. (Committee member) / Johnson, Shane (Committee member) / Arizona State University (Publisher)
Created2011
Description
This thesis summarizes the research work carried out on design, modeling and simulation of semiconductor nanophotonic devices. The research includes design of nanowire (NW) lasers, modeling of active plasmonic waveguides, design of plasmonic nano-lasers, and design of all-semiconductor plasmonic systems. For the NW part, a comparative study of electrical injection in the longitudinal p-i-n and coaxial p-n core-shell NWs was performed. It is found that high density carriers can be efficiently injected into and confined in the core-shell structure. The required bias voltage and doping concentrations in the core-shell structure are smaller than those in the longitudinal p-i-n structure. A new device structure with core-shell configuration at the p and n contact regions for electrically driven single NW laser was proposed. Through a comprehensive design trade-off between threshold gain and threshold voltage, room temperature lasing has been proved in the laser with low threshold current and large output efficiency. For the plasmonic part, the propagation of surface plasmon polariton (SPP) in a metal-semiconductor-metal structure where semiconductor is highly excited to have an optical gain was investigated. It is shown that near the resonance the SPP mode experiences an unexpected giant modal gain that is 1000 times of the material gain in the semiconductor and the corresponding confinement factor is as high as 105. The physical origin of the giant modal gain is the slowing down of the average energy propagation in the structure. Secondly, SPP modes lasing in a metal-insulator-semiconductor multi-layer structure was investigated. It is shown that the lasing threshold can be reduced by structural optimization. A specific design example was optimized using AlGaAs/GaAs/AlGaAs single quantum well sandwiched between silver layers. This cavity has a physical volume of 1.5×10-4 λ03 which is the smallest nanolaser reported so far. Finally, the all-semiconductor based plasmonics was studied. It is found that InAs is superior to other common semiconductors for plasmonic application in mid-infrared range. A plasmonic system made of InAs, GaSb and AlSb layers, consisting of a plasmonic source, waveguide and detector was proposed. This on-chip integrated system is realizable in a single epitaxial growth process.
ContributorsLi, Debin (Author) / Ning, Cun-Zheng (Thesis advisor) / Zhang, Yong-Hang (Committee member) / Balanis, Constantine A (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2012
Description
Recently a new materials platform consisting of semiconductors grown on GaSb and InAs substrates with lattice constants close to 6.1 A was proposed by our group for various electronic and optoelectronic applications. This materials platform consists of both II-VI (MgZnCdHg)(SeTe) and III-V (InGaAl)(AsSb) compound semiconductors, which have direct bandgaps spanning the entire energy spectrum from far-IR (~0 eV) up to UV (~3.4 eV). The broad range of bandgaps and material properties make it very attractive for a wide range of applications in optoelectronics, such as solar cells, laser diodes, light emitting diodes, and photodetectors. Moreover, this novel materials system potentially offers unlimited degrees of freedom for integration of electronic and optoelectronic devices onto a single substrate while keeping the best possible materials quality with very low densities of misfit dislocations. This capability is not achievable with any other known lattice-matched semiconductors on any available substrate. In the 6.1-A materials system, the semiconductors ZnTe and GaSb are almost perfectly lattice-matched with a lattice mismatch of only 0.13%. Correspondingly, it is expected that high quality ZnTe/GaSb and GaSb/ZnTe heterostructures can be achieved with very few dislocations generated during growth. To fulfill the task, their MBE growth and material properties are carefully investigated. High quality ZnTe layers grown on various III-V substrates and GaSb grown on ZnTe are successfully achieved using MBE. It is also noticed that ZnTe and GaSb have a type-I band-edge alignment with large band offsets (delta_Ec=0.934 eV, delta_Ev=0.6 eV), which provides strong confinement for both electrons and holes. Furthermore, a large difference in refractive index is found between ZnTe and GaSb (2.7 and 3.9, respectively, at 0.7 eV), leading to excellent optical confinement of the guided optical modes in planar semiconductor lasers or distributed Bragg reflectors (DBR) for vertical-cavity surface-emitting lasers. Therefore, GaSb/ZnTe double-heterostructure and ZnTe/GaSb DBR structure are suitable for use in light emitting devices. In this thesis work, experimental demonstration of these structures with excellent structural and optical properties is reported. During the exploration on the properties of various ZnTe heterostructures, it is found that residual tensile strains exist in the thick ZnTe epilayers when they are grown on GaAs, InP, InAs and GaSb substrates. The presence of tensile strains is due to the difference in thermal expansion coefficients between the epilayers and the substrates. The defect densities in these ZnTe layers become lower as the ZnTe layer thickness increases. Growth of high quality GaSb on ZnTe can be achieved using a temperature ramp during growth. The influence of temperature ramps with different ramping rates in the optical properties of GaSb layer is studied, and the samples grown with a temperature ramp from 360 to 470 C at a rate of 33 C/min show the narrowest bound exciton emission peak with a full width at half maximum of 15 meV. ZnTe/GaSb DBR structures show excellent reflectivity properties in the mid-infrared range. A peak reflectance of 99% with a wide stopband of 480 nm centered at 2.5 um is measured from a ZnTe/GaSb DBR sample of only 7 quarter-wavelength pairs.
ContributorsFan, Jin (Author) / Zhang, Yong-Hang (Thesis advisor) / Smith, David (Committee member) / Yu, Hongbin (Committee member) / Menéndez, Jose (Committee member) / Johnson, Shane (Committee member) / Arizona State University (Publisher)
Created2012
Description
The Autonomous Vehicle (AV), also known as self-driving car, promises to be a game changer for the transportation industry. This technology is predicted to drastically reduce the number of traffic fatalities due to human error [21].
However, road driving at any reasonable speed involves some risks. Therefore, even with high-tech AV algorithms and sophisticated sensors, there may be unavoidable crashes due to imperfection of the AV systems, or unexpected encounters with wildlife, children and pedestrians. Whenever there is a risk involved, there is the need for an ethical decision to be made [33].
While ethical and moral decision-making in humans has long been studied by experts, the advent of artificial intelligence (AI) also calls for machine ethics. To study the different moral and ethical decisions made by humans, experts may use the Trolley Problem [34], which is a scenario where one must pull a switch near a trolley track to redirect the trolley to kill one person on the track or do nothing, which will result in the deaths of five people. While it is important to take into account the input of members of a society and perform studies to understand how humans crash during unavoidable accidents to help program moral and ethical decision-making into self-driving cars, using the classical trolley problem is not ideal, as it is unrealistic and does not represent moral situations that people face in the real world.
This work seeks to increase the realism of the classical trolley problem for use in studies on moral and ethical decision-making by simulating realistic driving conditions in an immersive virtual environment with unavoidable crash scenarios, to investigate how drivers crash during these scenarios. Chapter 1 gives an in-depth background into autonomous vehicles and relevant ethical and moral problems; Chapter 2 describes current state-of-the-art online tools and simulators that were developed to study moral decision-making during unavoidable crashes. Chapters 3 focuses on building the simulator and the design of the crash scenarios. Chapter 4 describes human subjects experiments that were conducted with the simulator and their results, and Chapter 5 provides conclusions and avenues for future work.
However, road driving at any reasonable speed involves some risks. Therefore, even with high-tech AV algorithms and sophisticated sensors, there may be unavoidable crashes due to imperfection of the AV systems, or unexpected encounters with wildlife, children and pedestrians. Whenever there is a risk involved, there is the need for an ethical decision to be made [33].
While ethical and moral decision-making in humans has long been studied by experts, the advent of artificial intelligence (AI) also calls for machine ethics. To study the different moral and ethical decisions made by humans, experts may use the Trolley Problem [34], which is a scenario where one must pull a switch near a trolley track to redirect the trolley to kill one person on the track or do nothing, which will result in the deaths of five people. While it is important to take into account the input of members of a society and perform studies to understand how humans crash during unavoidable accidents to help program moral and ethical decision-making into self-driving cars, using the classical trolley problem is not ideal, as it is unrealistic and does not represent moral situations that people face in the real world.
This work seeks to increase the realism of the classical trolley problem for use in studies on moral and ethical decision-making by simulating realistic driving conditions in an immersive virtual environment with unavoidable crash scenarios, to investigate how drivers crash during these scenarios. Chapter 1 gives an in-depth background into autonomous vehicles and relevant ethical and moral problems; Chapter 2 describes current state-of-the-art online tools and simulators that were developed to study moral decision-making during unavoidable crashes. Chapters 3 focuses on building the simulator and the design of the crash scenarios. Chapter 4 describes human subjects experiments that were conducted with the simulator and their results, and Chapter 5 provides conclusions and avenues for future work.
ContributorsKankam, Immanuella (Author) / Berman, Spring (Thesis advisor) / Johnson, Kathryn (Committee member) / Yong, Sze Zheng (Committee member) / Arizona State University (Publisher)
Created2019
Description
The larger tolerance to lattice mismatch in growth of semiconductor nanowires (NWs) offers much more flexibility for achieving a wide range of compositions and bandgaps via alloying within a single substrate. The bandgap of III-V InGaAsP alloy NWs can be tuned to cover a wide range of (0.4, 2.25) eV, appealing for various optoelectronic applications such as photodetectors, solar cells, Light Emitting Diodes (LEDs), lasers, etc., given the existing rich knowledge in device fabrication based on these materials.
This dissertation explores the growth of InGaAsP alloys using a low-cost method that could be potentially important especially for III-V NW-based solar cells. The NWs were grown by Vapor-Liquid-Solid (VLS) and Vapor-Solid (VS) mechanisms using a Low-Pressure Chemical Vapor Deposition (LPCVD) technique. The concept of supersaturation was employed to control the morphology of NWs through the interplay between VLS and VS growth mechanisms. Comprehensive optical and material characterizations were carried out to evaluate the quality of the grown materials.
The growth of exceptionally high quality III-V phosphide NWs of InP and GaP was studied with an emphasis on the effects of vastly different sublimation rates of the associated III and V elements. The incorporation of defects exerted by deviation from stoichiometry was examined for GaP NWs, with an aim towards maximization of bandedge-to-defect emission ratio. In addition, a VLS-VS assisted growth of highly stoichiometric InP thin films and nano-networks with a wide temperature window from 560◦C to 720◦C was demonstrated. Such growth is shown to be insensitive to the type of substrates such as silicon, InP, and fused quartz. The dual gradient method was exploited to grow composition-graded ternary alloy NWs of InGaP, InGaAs, and GaAsP with different bandgaps ranging from 0.6 eV to 2.2 eV, to be used for making laterally-arrayed multiple bandgap (LAMB) solar cells. Furthermore, a template-based growth of the NWs was attempted based on the Si/SiO2 substrate. Such platform can be used to grow a wide range of alloy nanopillar materials, without being limited by typical lattice mismatch, providing a low cost universal platform for future PV solar cells.
This dissertation explores the growth of InGaAsP alloys using a low-cost method that could be potentially important especially for III-V NW-based solar cells. The NWs were grown by Vapor-Liquid-Solid (VLS) and Vapor-Solid (VS) mechanisms using a Low-Pressure Chemical Vapor Deposition (LPCVD) technique. The concept of supersaturation was employed to control the morphology of NWs through the interplay between VLS and VS growth mechanisms. Comprehensive optical and material characterizations were carried out to evaluate the quality of the grown materials.
The growth of exceptionally high quality III-V phosphide NWs of InP and GaP was studied with an emphasis on the effects of vastly different sublimation rates of the associated III and V elements. The incorporation of defects exerted by deviation from stoichiometry was examined for GaP NWs, with an aim towards maximization of bandedge-to-defect emission ratio. In addition, a VLS-VS assisted growth of highly stoichiometric InP thin films and nano-networks with a wide temperature window from 560◦C to 720◦C was demonstrated. Such growth is shown to be insensitive to the type of substrates such as silicon, InP, and fused quartz. The dual gradient method was exploited to grow composition-graded ternary alloy NWs of InGaP, InGaAs, and GaAsP with different bandgaps ranging from 0.6 eV to 2.2 eV, to be used for making laterally-arrayed multiple bandgap (LAMB) solar cells. Furthermore, a template-based growth of the NWs was attempted based on the Si/SiO2 substrate. Such platform can be used to grow a wide range of alloy nanopillar materials, without being limited by typical lattice mismatch, providing a low cost universal platform for future PV solar cells.
ContributorsHashemi Amiri, Seyed Ebrahim (Author) / Ning, Cun-Zheng (Thesis advisor) / Petuskey, William (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2018
Description
In this paper, we propose an autonomous throwing and catching system to be developed as a preliminary step towards the refinement of a robotic arm capable of improving strength and motor function in the limb. This will be accomplished by first autonomizing simpler movements, such as throwing a ball. In this system, an autonomous thrower will detect a desired target through the use of image processing. The launch angle and direction necessary to hit the target will then be calculated, followed by the launching of the ball. The smart catcher will then detect the ball as it is in the air, calculate its expected landing location based on its initial trajectory, and adjust its position so that the ball lands in the center of the target. The thrower will then proceed to compare the actual landing position with the position where it expected the ball to land, and adjust its calculations accordingly for the next throw. By utilizing this method of feedback, the throwing arm will be able to automatically correct itself. This means that the thrower will ideally be able to hit the target exactly in the center within a few throws, regardless of any additional uncertainty in the system. This project will focus of the controller and image processing components necessary for the autonomous throwing arm to be able to detect the position of the target at which it will be aiming, and for the smart catcher to be able to detect the position of the projectile and estimate its final landing position by tracking its current trajectory.
ContributorsLundberg, Kathie Joy (Co-author) / Thart, Amanda (Co-author) / Rodriguez, Armando (Thesis director) / Berman, Spring (Committee member) / Electrical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2018-05
Description
This thesis details the design and construction of a torque-controlled robotic gripper for use with the Pheeno swarm robotics platform. This project required expertise from several fields of study including: robotic design, programming, rapid prototyping, and control theory. An electronic Inertial Measurement Unit and a DC Motor were both used along with 3D printed plastic components and an electronic motor control board to develop a functional open-loop controlled gripper for use in collective transportation experiments. Code was developed that effectively acquired and filtered rate of rotation data alongside other code that allows for straightforward control of the DC motor through experimentally derived relationships between the voltage applied to the DC motor and the torque output of the DC motor. Additionally, several versions of the physical components are described through their development.
ContributorsMohr, Brennan (Author) / Berman, Spring (Thesis director) / Ren, Yi (Committee member) / Mechanical and Aerospace Engineering Program (Contributor) / School for Engineering of Matter,Transport & Enrgy (Contributor) / Barrett, The Honors College (Contributor)
Created2019-05
Description
In the next decade or so, there will be a shift in the industry of transportation across the world. Already today we have autonomous vehicles (AVs) tested in the Greater Phoenix area showing that the technology has improved to a level available to the public eye. Although this technology is not yet released commercially (for the most part), it is being used and will continue to be used to develop a safer future. With a high incidence of human error causing accidents, many expect that autonomous vehicles will be safer than human drivers. They do still require driver attention and sometimes intervention to ensure safety, but for the most part are much safer. In just the United States alone, there were 40,000 deaths due to car accidents last year [1]. If traffic fatalities were considered a disease, this would be an epidemic. The technology behind autonomous vehicles will allow for a much safer environment and increased mobility and independence for people who cannot drive and struggle with public transport. There are many opportunities for autonomous vehicles in the transportation industry. Companies can save a lot more money on shipping by cutting the costs of human drivers and trucks on the road, even allowing for simpler drop shipments should the necessary AI be developed.Research is even being done by several labs at Arizona State University. For example, Dr. Spring Berman’s Autonomous Collective Systems Lab has been collaborating with Dr. Nancy Cooke of Human Systems Engineering to develop a traffic testbed, CHARTopolis, to study the risks of driver-AV interactions and the psychological effects of AVs on human drivers on a small scale. This testbed will be used by researchers from their labs and others to develop testing on reaction, trust, and user experience with AVs in a safe environment that simulates conditions similar to those experienced by full-size AVs. Using a new type of small robot that emulates an AV, developed in Dr. Berman’s lab, participants will be able to remotely drive around a model city environment and interact with other AV-like robots using the cameras and LiDAR sensors on the remotely driven robot to guide them.
Although these commercial and research systems are still in testing, it is important to understand how AVs are being marketed to the general public and how they are perceived, so that one day they may be effectively adopted into everyday life. People do not want to see a car they do not trust on the same roads as them, so the questions are: why don’t people trust them, and how can companies and researchers improve the trustworthiness of the vehicles?
Although these commercial and research systems are still in testing, it is important to understand how AVs are being marketed to the general public and how they are perceived, so that one day they may be effectively adopted into everyday life. People do not want to see a car they do not trust on the same roads as them, so the questions are: why don’t people trust them, and how can companies and researchers improve the trustworthiness of the vehicles?
ContributorsShuster, Daniel Nadav (Author) / Berman, Spring (Thesis director) / Cooke, Nancy (Committee member) / Mechanical and Aerospace Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2019-05
Description
Interest in Micro Aerial Vehicle (MAV) research has surged over the past decade. MAVs offer new capabilities for intelligence gathering, reconnaissance, site mapping, communications, search and rescue, etc. This thesis discusses key modeling and control aspects of flapping wing MAVs in hover. A three degree of freedom nonlinear model is used to describe the flapping wing vehicle. Averaging theory is used to obtain a nonlinear average model. The equilibrium of this model is then analyzed. A linear model is then obtained to describe the vehicle near hover. LQR is used to as the main control system design methodology. It is used, together with a nonlinear parameter optimization algorithm, to design a family multivariable control system for the MAV. Critical performance trade-offs are illuminated. Properties at both the plant output and input are examined. Very specific rules of thumb are given for control system design. The conservatism of the rules are also discussed. Issues addressed include
What should the control system bandwidth be vis--vis the flapping frequency (so that averaging the nonlinear system is valid)?
When is first order averaging sufficient? When is higher order averaging necessary?
When can wing mass be neglected and when does wing mass become critical to model?
This includes how and when the rules given can be tightened; i.e. made less conservative.
What should the control system bandwidth be vis--vis the flapping frequency (so that averaging the nonlinear system is valid)?
When is first order averaging sufficient? When is higher order averaging necessary?
When can wing mass be neglected and when does wing mass become critical to model?
This includes how and when the rules given can be tightened; i.e. made less conservative.
ContributorsBiswal, Shiba (Author) / Rodriguez, Armando (Thesis advisor) / Mignolet, Marc (Thesis advisor) / Berman, Spring (Committee member) / Arizona State University (Publisher)
Created2015