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- All Subjects: engineering
- Creators: Bakkaloglu, Bertan
Description
A numerical study of incremental spin-up and spin-up from rest of a thermally- stratified fluid enclosed within a right circular cylinder with rigid bottom and side walls and stress-free upper surface is presented. Thermally stratified spin-up is a typical example of baroclinity, which is initiated by a sudden increase in rotation rate and the tilting of isotherms gives rise to baroclinic source of vorticity. Research by (Smirnov et al. [2010a]) showed the differences in evolution of instabilities when Dirichlet and Neumann thermal boundary conditions were applied at top and bottom walls. Study of parametric variations carried out in this dissertation confirmed the instability patterns observed by them for given aspect ratio and Rossby number values greater than 0.5. Also results reveal that flow maintained axisymmetry and stability for short aspect ratio containers independent of amount of rotational increment imparted. Investigation on vorticity components provides framework for baroclinic vorticity feedback mechanism which plays important role in delayed rise of instabilities when Dirichlet thermal Boundary Conditions are applied.
ContributorsKher, Aditya Deepak (Author) / Chen, Kangping (Thesis advisor) / Huang, Huei-Ping (Committee member) / Herrmann, Marcus (Committee member) / Arizona State University (Publisher)
Created2011
Description
Pulse Density Modulation- (PDM-) based class-D amplifiers can reduce non-linearity and tonal content due to carrier signal in Pulse Width Modulation - (PWM-) based amplifiers. However, their low-voltage analog implementations also require a linear- loop filter and a quantizer. A PDM-based class-D audio amplifier using a frequency-domain quantization is presented in this paper. The digital-intensive frequency domain approach achieves high linearity under low-supply regimes. An analog comparator and a single-bit quantizer are replaced with a Current-Controlled Oscillator- (ICO-) based frequency discriminator. By using the ICO as a phase integrator, a third-order noise shaping is achieved using only two analog integrators. A single-loop, singlebit class-D audio amplifier is presented with an H-bridge switching power stage, which is designed and fabricated on a 0.18 um CMOS process, with 6 layers of metal achieving a total harmonic distortion plus noise (THD+N) of 0.065% and a peak power efficiency of 80% while driving a 4-ohms loudspeaker load. The amplifier can deliver the output power of 280 mW.
ContributorsLee, Junghan (Author) / Bakkaloglu, Bertan (Thesis advisor) / Kiaei, Sayfe (Committee member) / Ozev, Sule (Committee member) / Song, Hongjiang (Committee member) / Arizona State University (Publisher)
Created2011
Description
ABSTRACT To meet stringent market demands, manufacturers must produce Radio Frequency (RF) transceivers that provide wireless communication between electronic components used in consumer products at extremely low cost. Semiconductor manufacturers are in a steady race to increase integration levels through advanced system-on-chip (SoC) technology. The testing costs of these devices tend to increase with higher integration levels. As the integration levels increase and the devices get faster, the need for high-calibre low cost test equipment become highly dominant. However testing the overall system becomes harder and more expensive. Traditionally, the transceiver system is tested in two steps utilizing high-calibre RF instrumentation and mixed-signal testers, with separate measurement setups for transmitter and receiver paths. Impairments in the RF front-end, such as the I/Q gain and phase imbalance and nonlinearity, severely affect the performance of the device. The transceiver needs to be characterized in terms of these impairments in order to guarantee good performance and specification requirements. The motivation factor for this thesis is to come up with a low cost and computationally simple extraction technique of these impairments. In the proposed extraction technique, the mapping between transmitter input signals and receiver output signals are used to extract the impairment and nonlinearity parameters. This is done with the help of detailed mathematical modeling of the transceiver. While the overall behavior is nonlinear, both linear and nonlinear models to be used under different test setups are developed. A two step extraction technique has been proposed in this work. The extraction of system parameters is performed by using the mathematical model developed along with a genetic algorithm implemented in MATLAB. The technique yields good extraction results with reasonable error. It uses simple mathematical operation which makes the extraction fast and computationally simple when compared to other existing techniques such as traditional two step dedicated approach, Nonlinear Solver (NLS) approach, etc. It employs frequency domain analysis of low frequency input and output signals, over cumbersome time domain computations. Thus a test method, including detailed behavioral modeling of the transceiver, appropriate test signal design along with a simple algorithm for extraction is presented.
ContributorsSreenivassan, Aiswariya (Author) / Ozev, Sule (Thesis advisor) / Kiaei, Sayfe (Committee member) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2011
Description
The partially-depleted (PD) silicon Metal Semiconductor Field Effect Transistor (MESFET) is becoming more and more attractive for analog and RF applications due to its high breakdown voltage. Compared to conventional CMOS high voltage transistors, the silicon MESFET can be fabricated in commercial standard Silicon-on-Insulator (SOI) CMOS foundries without any change to the process. The transition frequency of the device is demonstrated to be 45GHz, which makes the MESFET suitable for applications in high power RF power amplifier designs. Also, high breakdown voltage and low turn-on resistance make it the ideal choice for switches in the switching regulator designs. One of the anticipated applications of the MESFET is for the pass device for a low dropout linear regulator. Conventional NMOS and PMOS linear regulators suffer from high dropout voltage, low bandwidth and poor stability issues. In contrast, the N-MESFET pass transistor can provide an ultra-low dropout voltage and high bandwidth without the need for an external compensation capacitor to ensure stability. In this thesis, the design theory and problems of the conventional linear regulators are discussed. N-MESFET low dropout regulators are evaluated and characterized. The error amplifier used a folded cascode architecture with gain boosting. The source follower topology is utilized as the buffer to sink the gate leakage current from the MESFET. A shunt-feedback transistor is added to reduce the output impedance and provide the current adaptively. Measurement results show that the dropout voltage is less than 150 mV for a 1A load current at 1.8V output. Radiation measurements were done for discrete MESFET and fully integrated LDO regulators, which demonstrate their radiation tolerance ability for aerospace applications.
ContributorsChen, Bo (Author) / Thornton, Trevor (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
This work describes the numerical process developed for use of rocket engine nozzle ejectors. Ejector nozzles, while applied to jet engines extensively, have not been applied to rockets, and have great potential to improve the performance of endoatmospheric rocket propulsion systems. Utilizing the low pressure, high velocity flow in the plume, this secondary structure entrains a secondary mass flow to increase the mass flow of the propulsion system. Rocket engine nozzle ejectors must be designed with the high supersonic conditions associated with rocket engines. These designs rely on the numerical process described in this paper.
ContributorsGibson, Gaines Sullivan (Author) / Wells, Valana (Thesis director) / Takahashi, Timothy (Committee member) / Barrett, The Honors College (Contributor) / Mechanical and Aerospace Engineering Program (Contributor)
Created2014-05
Description
ABSTRACT Ongoing research into wireless transceivers in the 60 GHz band is required to address the demand for high data rate communications systems at a frequency where signal propagation is challenging even over short ranges. This thesis proposes a mixer architecture in Complementary Metal Oxide Semiconductor (CMOS) technology that uses a voltage controlled oscillator (VCO) operating at a fractional multiple of the desired output signal. The proposed topology is different from conventional subharmonic mixing in that the oscillator phase generation circuitry usually required for such a circuit is unnecessary. Analysis and simulations are performed on the proposed mixer circuit in an IBM 90 nm RF process on a 1.2 V supply. A typical RF transmitter system is considered in determining the block requirements needed for the mixer to meet the IEEE 802.11ad 60 GHz Draft Physical Layer Specification. The proposed circuit has a conversion loss of 21 dB at 60 GHz with a 5 dBm LO power at 20 GHz. Input-referred third-order intercept point (IIP3) is 2.93 dBm. The gain and linearity of the proposed mixer are sufficient for Orthogonal Frequency Division Multiplexing (OFDM) modulation at 60 GHz with a transmitted data rate of over 4 Gbps.
ContributorsMartino, Todd Jeffrey (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Aberle, James T., 1961- (Committee member) / Arizona State University (Publisher)
Created2010
Description
The constant scaling of supply voltages in state-of-the-art CMOS processes has led to severe limitations for many analog circuit applications. Some CMOS processes have addressed this issue by adding high voltage MOSFETs to their process. Although it can be a completely viable solution, it usually requires a changing of the process flow or adding additional steps, which in turn, leads to an increase in fabrication costs. Si-MESFETs (silicon-metal-semiconductor-field-effect-transistors) from Arizona State University (ASU) on the other hand, have an inherent high voltage capability and can be added to any silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) CMOS process free of cost. This has been proved at five different commercial foundries on technologies ranging from 0.5 to 0.15 μm. Another critical issue facing CMOS processes on insulated substrates is the scaling of the thin silicon channel. Consequently, the future direction of SOI/SOS CMOS transistors may trend away from partially depleted (PD) transistors and towards fully depleted (FD) devices. FD-CMOS are already being implemented in multiple applications due to their very low power capability. Since the FD-CMOS market only figures to grow, it is appropriate that MESFETs also be developed for these processes. The beginning of this thesis will focus on the device aspects of both PD and FD-MESFETs including their layout structure, DC and RF characteristics, and breakdown voltage. The second half will then shift the focus towards implementing both types of MESFETs in an analog circuit application. Aside from their high breakdown ability, MESFETs also feature depletion mode operation, easy to adjust but well controlled threshold voltages, and fT's up to 45 GHz. Those unique characteristics can allow certain designs that were previously difficult to implement or prohibitively expensive using conventional technologies to now be achieved. One such application which benefits is low dropout regulators (LDO). By utilizing an n-channel MESFET as the pass transistor, a LDO featuring very low dropout voltage, fast transient response, and stable operation can be achieved without an external capacitance. With the focus of this thesis being MESFET based LDOs, the device discussion will be mostly tailored towards optimally designing MESFETs for this particular application.
ContributorsLepkowski, William (Author) / Thornton, Trevor (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2010
Description
In a society that is becoming more technologically driven, it is important to have people to design, test, and build new things in order for society to progress. This is oftentimes the role of an engineer. However, engineering school is not easy, and engineering students don’t always make it all the way through school to get an engineering job. This thesis is an in-depth analysis of an engineering student’s path - from choosing engineering as a major to ultimately transitioning into a full-time engineering job. It will do this by covering (1) what engineering is and what career opportunities exist within the discipline, (2) common pitfalls that students may encounter while going through engineering school, (3) how to get an engineering job in industry, and (4) how to appropriately transition into an industry job using the skills from engineering school. While talking about what engineering is and what career opportunities exist, this thesis will discuss engineering as a profession, the ABET accreditation board, and careers in industry vs academia. As part of common pitfalls that engineering students face, this thesis will discuss tenure track, theory vs reality, cooperative learning, and misconceptions about engineering. In order to talk about how to get an industry job, this thesis will discuss the impact of grades, relevant experience, communication, personal branding, and industry options. Finally, while talking about effectively transitioning into industry, this thesis will discuss understanding the skills gained from engineering school, the different roles in industry, and how to appropriately apply those skills. Ultimately this thesis aims to be a resource for students interested in engineering so that they can understand how to successfully make it through school and move into the work force effectively.
ContributorsJordan, Arminta Claire (Author) / Takahashi, Timothy (Thesis director) / Zhu, Haolin (Committee member) / Mechanical and Aerospace Engineering Program (Contributor, Contributor) / Barrett, The Honors College (Contributor)
Created2019-05
Description
This paper describes the research done to attempt to scale up thrusts produced by ionic wind thrusters, or "lifters" to magnitudes needed to power a 2 kg hobbyist remote-control airplane. It includes background information on the Biefeld-Brown effect and the thrust it produces, an experiment that attempted to prove that thrust can be scaled up from smaller ionic wind thrusters to larger scales, and two models predicting thruster geometries and power sources needed to reach these thrusts. An ionic wind thruster could not be created that would power the hobbyist remote as a high-voltage power source with voltage and power high enough could not be obtained. Thrusters were created for the experiment using balsa wood, aluminum foil, and thin copper wire, and were powered using a 30 kV transformer. The thrusters attempted to test for correlations between thrust, electrode length, and current; electric field strength, and thrust; and thrust optimization through opening up air flow through the collector electrode. The experiment was inconclusive as all the thrusters failed to produce measurable thrust. Further experimentation suggests the chief failure mode is likely conduction from the collector electrode to the nearby large conductive surface of the scale.
ContributorsHaug, Andrew James (Author) / White, Daniel (Thesis director) / Takahashi, Timothy (Committee member) / Middleton, James (Committee member) / Mechanical and Aerospace Engineering Program (Contributor) / Department of Military Science (Contributor) / Barrett, The Honors College (Contributor)
Created2017-12
Description
There is an ever-increasing demand for higher bandwidth and data rate ensuing from exploding number of radio frequency integrated systems and devices. As stated in the Shannon-Hartley theorem, the maximum achievable data rate of a communication channel is linearly proportional to the system bandwidth. This is the main driving force behind pushing wireless systems towards millimeter-wave frequency range, where larger bandwidth is available at a higher carrier frequency. Observing the Moor’s law, highly scaled complementary metal–oxide–semiconductor (CMOS) technologies provide fast transistors with a high unity power gain frequency which enables operating at millimeter-wave frequency range. CMOS is the compelling choice for digital and signal processing modules which concurrently offers high computation speed, low power consumption, and mass integration at a high manufacturing yield. One of the main shortcomings of the sub-micron CMOS technologies is the low breakdown voltage of the transistors that limits the dynamic range of the radio frequency (RF) power blocks, especially with the power amplifiers. Low voltage swing restricts the achievable output power which translates into low signal to noise ratio and degraded linearity. Extensive research has been done on proposing new design and IC fabrication techniques with the goal of generating higher output power in CMOS technology. The prominent drawbacks of these solutions are an increased die area, higher cost per design, and lower overall efficiency due to lossy passive components. In this dissertation, CMOS compatible metal–semiconductor field-effect transistor (MESFETs) are utilized to put forward a new solution to enhance the power amplifier’s breakdown voltage, gain and maximum output power. Requiring no change to the conventional CMOS process flow, this low cost approach allows direct incorporation of high voltage power MESFETs into silicon. High voltage MESFETs were employed in a cascode structure to push the amplifier’s cutoff frequency and unity power gain frequency to the 5G and K-band frequency range. This dissertation begins with CMOS compatible MESFET modeling and fabrication steps, and culminates in the discussion of amplifier design and optimization methodology, parasitic de-embedding steps, simulation and measurement results, and high resistivity RF substrate characterization.
ContributorsHabibiMehr, Payam (Author) / Thornton, Trevor John (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Formicone, Gabriele (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2019