Matching Items (5)
Filtering by
- All Subjects: engineering
- All Subjects: Low Power
Description
The medical industry has benefited greatly by electronic integration resulting in the explosive growth of active medical implants. These devices often treat and monitor chronic health conditions and require very minimal power usage. A key part of these medical implants is an ultra-low power two way wireless communication system. This enables both control of the implant as well as relay of information collected. This research has focused on a high performance receiver for medical implant applications. One commonly quoted specification to compare receivers is energy per bit required. This metric is useful, but incomplete in that it ignores Sensitivity level, bit error rate, and immunity to interferers. In this study exploration of receiver architectures and convergence upon a comprehensive solution is done. This analysis is used to design and build a system for validation. The Direct Conversion Receiver architecture implemented for the MICS standard in 0.18 µm CMOS process consumes approximately 2 mW is competitive with published research.
ContributorsStevens, Mark (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Aberle, James T., 1961- (Committee member) / Barnaby, Hugh (Committee member) / Arizona State University (Publisher)
Created2012
Description
Modern day deep sub-micron SOC architectures often demand very low supply noise levels. As supply voltage decreases with decreasing deep sub-micron gate length, noise on the power supply starts playing a dominant role in noise-sensitive analog blocks, especially high precision ADC, PLL, and RF SOC's. Most handheld and portable applications and highly sensitive medical instrumentation circuits tend to use low noise regulators as on-chip or on board power supply. Nonlinearities associated with LNA's, mixers and oscillators up-convert low frequency noise with the signal band. Specifically, synthesizer and TCXO phase noise, LNA and mixer noise figure, and adjacent channel power ratios of the PA are heavily influenced by the supply noise and ripple. This poses a stringent requirement on a very low noise power supply with high accuracy and fast transient response. Low Dropout (LDO) regulators are preferred over switching regulators for these applications due to their attractive low noise and low ripple features. LDO's shield sensitive blocks from high frequency fluctuations on the power supply while providing high accuracy, fast response supply regulation.
This research focuses on developing innovative techniques to reduce the noise of any generic wideband LDO, stable with or without load capacitor. The proposed techniques include Switched RC Filtering to reduce the Bandgap Reference noise, Current Mode Chopping to reduce the Error Amplifier noise & MOS-R based RC filter to reduce the noise due to bias current. The residual chopping ripple was reduced using a Switched Capacitor notch filter. Using these techniques, the integrated noise of a wideband LDO was brought down to 15µV in the integration band of 10Hz to 100kHz. These techniques can be integrated into any generic LDO without any significant area overhead.
This research focuses on developing innovative techniques to reduce the noise of any generic wideband LDO, stable with or without load capacitor. The proposed techniques include Switched RC Filtering to reduce the Bandgap Reference noise, Current Mode Chopping to reduce the Error Amplifier noise & MOS-R based RC filter to reduce the noise due to bias current. The residual chopping ripple was reduced using a Switched Capacitor notch filter. Using these techniques, the integrated noise of a wideband LDO was brought down to 15µV in the integration band of 10Hz to 100kHz. These techniques can be integrated into any generic LDO without any significant area overhead.
ContributorsMagod Ramakrishna, Raveesh (Author) / Bakkaloglu, Bertan (Thesis advisor) / Garrity, Douglas (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2014
Description
Semiconductor device scaling has kept up with Moore's law for the past decades and they have been scaling by a factor of half every one and half years. Every new generation of device technology opens up new opportunities and challenges and especially so for analog design. High speed and low gain is characteristic of these processes and hence a tradeoff that can enable to get back gain by trading speed is crucial. This thesis proposes a solution that increases the speed of sampling of a circuit by a factor of three while reducing the specifications on analog blocks and keeping the power nearly constant. The techniques are based on the switched capacitor technique called Correlated Level Shifting. A triple channel Cyclic ADC has been implemented, with each channel working at a sampling frequency of 3.33MS/s and a resolution of 14 bits. The specifications are compared with that based on a traditional architecture to show the superiority of the proposed technique.
ContributorsSivakumar, Balasubramanian (Author) / Farahani, Bahar Jalali (Thesis advisor) / Garrity, Douglas (Committee member) / Bakkaloglu, Bertan (Committee member) / Aberle, James T., 1961- (Committee member) / Arizona State University (Publisher)
Created2012
Description
ABSTRACT Ongoing research into wireless transceivers in the 60 GHz band is required to address the demand for high data rate communications systems at a frequency where signal propagation is challenging even over short ranges. This thesis proposes a mixer architecture in Complementary Metal Oxide Semiconductor (CMOS) technology that uses a voltage controlled oscillator (VCO) operating at a fractional multiple of the desired output signal. The proposed topology is different from conventional subharmonic mixing in that the oscillator phase generation circuitry usually required for such a circuit is unnecessary. Analysis and simulations are performed on the proposed mixer circuit in an IBM 90 nm RF process on a 1.2 V supply. A typical RF transmitter system is considered in determining the block requirements needed for the mixer to meet the IEEE 802.11ad 60 GHz Draft Physical Layer Specification. The proposed circuit has a conversion loss of 21 dB at 60 GHz with a 5 dBm LO power at 20 GHz. Input-referred third-order intercept point (IIP3) is 2.93 dBm. The gain and linearity of the proposed mixer are sufficient for Orthogonal Frequency Division Multiplexing (OFDM) modulation at 60 GHz with a transmitted data rate of over 4 Gbps.
ContributorsMartino, Todd Jeffrey (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Aberle, James T., 1961- (Committee member) / Arizona State University (Publisher)
Created2010
Description
The study of soft magnetic materials has been growing in popularity in recent years. Driving this interest are new applications for traditional electrical power-management components, such as inductors and transformers, which must be scaled down to the micro and nano scale while the frequencies of operation have been scaling up to the gigahertz range and beyond. The exceptional magnetic properties of the materials make them highly effective in these small-component applications, but the ability of these materials to provide highly-effective shielding has not been so thoroughly considered. Most shielding is done with traditional metals, such as aluminum, because of the relatively low cost of the material and high workability in shaping the material to meet size and dimensional requirements.
This research project focuses on analyzing the variance in shielding effectiveness and electromagnetic field effects of a thin film of Cobalt Zirconium Tantalum Boron (CZTB) in the band of frequencies most likely to require innovative solutions to long-standing problems of noise and interference. The measurements include Near H-Field attenuation and field effects, Far Field shielding, and Backscatter. Minor variances in the thickness and layering of sputter deposition can have significant changes electromagnetic signature of devices which radiate energy through the material.
The material properties presented in this research are H-Field attenuation, H-Field Flux Orientation, Far-Field Approximation, E Field Vector Directivity, H Field Vector Directivity, and Backscatter Magnitude. The results are presented, analyzed and explained using characterization techniques. Future work includes the effect of sputter deposition orientation, application to devices, and applicability in mitigating specific noise signals beyond the 5G band.
This research project focuses on analyzing the variance in shielding effectiveness and electromagnetic field effects of a thin film of Cobalt Zirconium Tantalum Boron (CZTB) in the band of frequencies most likely to require innovative solutions to long-standing problems of noise and interference. The measurements include Near H-Field attenuation and field effects, Far Field shielding, and Backscatter. Minor variances in the thickness and layering of sputter deposition can have significant changes electromagnetic signature of devices which radiate energy through the material.
The material properties presented in this research are H-Field attenuation, H-Field Flux Orientation, Far-Field Approximation, E Field Vector Directivity, H Field Vector Directivity, and Backscatter Magnitude. The results are presented, analyzed and explained using characterization techniques. Future work includes the effect of sputter deposition orientation, application to devices, and applicability in mitigating specific noise signals beyond the 5G band.
ContributorsMiller, Phillip Carl (Author) / Yu, Hongbin (Thesis advisor) / Aberle, James T., 1961- (Committee member) / Blain Christen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2019