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Description
The increase in computing power has simultaneously increased the demand for input/output (I/O) bandwidth. Unfortunately, the speed of I/O and memory interconnects have not kept pace. Thus, processor-based systems are I/O and interconnect limited. The memory aggregated bandwidth is not scaling fast enough to keep up with increasing bandwidth demands.

The increase in computing power has simultaneously increased the demand for input/output (I/O) bandwidth. Unfortunately, the speed of I/O and memory interconnects have not kept pace. Thus, processor-based systems are I/O and interconnect limited. The memory aggregated bandwidth is not scaling fast enough to keep up with increasing bandwidth demands. The term "memory wall" has been coined to describe this phenomenon.

A new memory bus concept that has the potential to push double data rate (DDR) memory speed to 30 Gbit/s is presented. We propose to map the conventional DDR bus to a microwave link using a multicarrier frequency division multiplexing scheme. The memory bus is formed using a microwave signal carried within a waveguide. We call this approach multicarrier memory channel architecture (MCMCA). In MCMCA, each memory signal is modulated onto an RF carrier using 64-QAM format or higher. The carriers are then routed using substrate integrated waveguide (SIW) interconnects. At the receiver, the memory signals are demodulated and then delivered to SDRAM devices. We pioneered the usage of SIW as memory channel interconnects and demonstrated that it alleviates the memory bandwidth bottleneck. We demonstrated SIW performance superiority over conventional transmission line in immunity to cross-talk and electromagnetic interference. We developed a methodology based on design of experiment (DOE) and response surface method techniques that optimizes the design of SIW interconnects and minimizes its performance fluctuations under material and manufacturing variations. Along with using SIW, we implemented a multicarrier architecture which enabled the aggregated DDR bandwidth to reach 30 Gbit/s. We developed an end-to-end system model in Simulink and demonstrated the MCMCA performance for ultra-high throughput memory channel.

Experimental characterization of the new channel shows that by using judicious frequency division multiplexing, as few as one SIW interconnect is sufficient to transmit the 64 DDR bits. Overall aggregated bus data rate achieves 240 GBytes/s data transfer with EVM not exceeding 2.26% and phase error of 1.07 degree or less.
ContributorsBensalem, Brahim (Author) / Aberle, James T. (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Tirkas, Panayiotis A. (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2018
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Description
There is an ever-increasing demand for higher bandwidth and data rate ensuing from exploding number of radio frequency integrated systems and devices. As stated in the Shannon-Hartley theorem, the maximum achievable data rate of a communication channel is linearly proportional to the system bandwidth. This is the main driving force

There is an ever-increasing demand for higher bandwidth and data rate ensuing from exploding number of radio frequency integrated systems and devices. As stated in the Shannon-Hartley theorem, the maximum achievable data rate of a communication channel is linearly proportional to the system bandwidth. This is the main driving force behind pushing wireless systems towards millimeter-wave frequency range, where larger bandwidth is available at a higher carrier frequency. Observing the Moor’s law, highly scaled complementary metal–oxide–semiconductor (CMOS) technologies provide fast transistors with a high unity power gain frequency which enables operating at millimeter-wave frequency range. CMOS is the compelling choice for digital and signal processing modules which concurrently offers high computation speed, low power consumption, and mass integration at a high manufacturing yield. One of the main shortcomings of the sub-micron CMOS technologies is the low breakdown voltage of the transistors that limits the dynamic range of the radio frequency (RF) power blocks, especially with the power amplifiers. Low voltage swing restricts the achievable output power which translates into low signal to noise ratio and degraded linearity. Extensive research has been done on proposing new design and IC fabrication techniques with the goal of generating higher output power in CMOS technology. The prominent drawbacks of these solutions are an increased die area, higher cost per design, and lower overall efficiency due to lossy passive components. In this dissertation, CMOS compatible metal–semiconductor field-effect transistor (MESFETs) are utilized to put forward a new solution to enhance the power amplifier’s breakdown voltage, gain and maximum output power. Requiring no change to the conventional CMOS process flow, this low cost approach allows direct incorporation of high voltage power MESFETs into silicon. High voltage MESFETs were employed in a cascode structure to push the amplifier’s cutoff frequency and unity power gain frequency to the 5G and K-band frequency range. This dissertation begins with CMOS compatible MESFET modeling and fabrication steps, and culminates in the discussion of amplifier design and optimization methodology, parasitic de-embedding steps, simulation and measurement results, and high resistivity RF substrate characterization.
ContributorsHabibiMehr, Payam (Author) / Thornton, Trevor John (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Formicone, Gabriele (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2019
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Description
As wireless communication enters smartphone era, more complicated communication technologies are being used to transmit higher data rate. Power amplifier (PA) has to work in back-off region, while this inevitably reduces battery life for cellphones. Various techniques have been reported to increase PA efficiency, such as envelope elimination and restoration

As wireless communication enters smartphone era, more complicated communication technologies are being used to transmit higher data rate. Power amplifier (PA) has to work in back-off region, while this inevitably reduces battery life for cellphones. Various techniques have been reported to increase PA efficiency, such as envelope elimination and restoration (EER) and envelope tracking (ET). However, state of the art ET supply modulators failed to address high efficiency, high slew rate, and accurate tracking concurrently.

In this dissertation, a linear-switch mode hybrid ET supply modulator utilizing adaptive biasing and gain enhanced current mirror operational transconductance amplifier (OTA) with class-AB output stage in parallel with a switching regulator is presented. In comparison to a conventional OTA design with similar quiescent current consumption, proposed approach improves positive and negative slew rate from 50 V/µs to 93.4 V/µs and -87 V/µs to -152.5 V/µs respectively, dc gain from 45 dB to 67 dB while consuming same amount of quiescent current. The proposed hybrid supply modulator achieves 83% peak efficiency, power added efficiency (PAE) of 42.3% at 26.2 dBm for a 10 MHz 7.24 dB peak-to-average power ratio (PAPR) LTE signal and improves PAE by 8% at 6 dB back off from 26.2 dBm power amplifier (PA) output power with respect to fixed supply. With a 10 MHz 7.24 dB PAPR QPSK LTE signal the ET PA system achieves adjacent channel leakage ratio (ACLR) of -37.7 dBc and error vector magnitude (EVM) of 4.5% at 26.2 dBm PA output power, while with a 10 MHz 8.15 dB PAPR 64QAM LTE signal the ET PA system achieves ACLR of -35.6 dBc and EVM of 6% at 26 dBm PA output power without digital pre-distortion (DPD). The proposed supply modulator core circuit occupies 1.1 mm2 die area, and is fabricated in a 0.18 µm CMOS technology.
ContributorsJing, Yue (Author) / Bakkaloglu, Bertan (Thesis advisor) / Kiaei, Sayfe (Committee member) / Kitchen, Jennifer (Committee member) / Song, Hongjiang (Committee member) / Arizona State University (Publisher)
Created2017
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Description
Video capture, storage, and distribution in wireless video sensor networks

(WVSNs) critically depends on the resources of the nodes forming the sensor

networks. In the era of big data, Internet of Things (IoT), and distributed

demand and solutions, there is a need for multi-dimensional data to be part of

the

Video capture, storage, and distribution in wireless video sensor networks

(WVSNs) critically depends on the resources of the nodes forming the sensor

networks. In the era of big data, Internet of Things (IoT), and distributed

demand and solutions, there is a need for multi-dimensional data to be part of

the Sensor Network data that is easily accessible and consumable by humanity as

well as machinery. Images and video are expected to become as ubiquitous as is

the scalar data in traditional sensor networks. The inception of video-streaming

over the Internet, heralded a relentless research for effective ways of

distributing video in a scalable and cost effective way. There has been novel

implementation attempts across several network layers. Due to the inherent

complications of backward compatibility and need for standardization across

network layers, there has been a refocused attention to address most of the

video distribution over the application layer. As a result, a few video

streaming solutions over the Hypertext Transfer Protocol (HTTP) have been

proposed. Most notable are Apple’s HTTP Live Streaming (HLS) and the Motion

Picture Experts Groups Dynamic Adaptive Streaming over HTTP (MPEG-DASH). These

frameworks, do not address the typical and future WVSN use cases. A highly

flexible Wireless Video Sensor Network Platform and compatible DASH (WVSNP-DASH)

are introduced. The platform's goal is to usher video as a data element that

can be integrated into traditional and non-Internet networks. A low cost,

scalable node is built from the ground up to be fully compatible with the

Internet of Things Machine to Machine (M2M) concept, as well as the ability to

be easily re-targeted to new applications in a short time. Flexi-WVSNP design

includes a multi-radio node, a middle-ware for sensor operation and

communication, a cross platform client facing data retriever/player framework,

scalable security as well as a cohesive but decoupled hardware and software

design.
ContributorsSeema, Adolph (Author) / Reisslein, Martin (Thesis advisor) / Kitchen, Jennifer (Committee member) / Seeling, Patrick (Committee member) / Zhang, Yanchao (Committee member) / Arizona State University (Publisher)
Created2017
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Description
The manufacturing process for electronic systems involves many players, from chip/board design and fabrication to firmware design and installation.

In today's global supply chain, any of these steps are prone to interference from rogue players, creating a security risk.

Manufactured devices need to be verified to perform only their intended

The manufacturing process for electronic systems involves many players, from chip/board design and fabrication to firmware design and installation.

In today's global supply chain, any of these steps are prone to interference from rogue players, creating a security risk.

Manufactured devices need to be verified to perform only their intended operations since it is not economically feasible to control the supply chain and use only trusted facilities.

It is becoming increasingly necessary to trust but verify the received devices both at production and in the field.

Unauthorized hardware or firmware modifications, known as Trojans,

can steal information, drain the battery, or damage battery-driven embedded systems and lightweight Internet of Things (IoT) devices.

Since Trojans may be triggered in the field at an unknown instance,

it is essential to detect their presence at run-time.

However, it isn't easy to run sophisticated detection algorithms on these devices

due to limited computational power and energy, and in some cases, lack of accessibility.

Since finding a trusted sample is infeasible in general, the proposed technique is based on self-referencing to remove any effect of environmental or device-to-device variations in the frequency domain.

In particular, the self-referencing is achieved by exploiting the band-limited nature of Trojan activity using signal detection theory.

When the device enters the test mode, a predefined test application is run on the device

repetitively for a known period. The periodicity ensures that the spectral electromagnetic power of the test application concentrates at known frequencies, leaving the remaining frequencies within the operating bandwidth at the noise level. Any deviations from the noise level for these unoccupied frequency locations indicate the presence of unknown (unauthorized) activity. Hence, the malicious activity can differentiate without using a golden reference or any knowledge of the Trojan activity attributes.

The proposed technique's effectiveness is demonstrated through experiments with collecting and processing side-channel signals, such as involuntarily electromagnetic emissions and power consumption, of a wearable electronics prototype and commercial system-on-chip under a variety of practical scenarios.
ContributorsKarabacak, Fatih (Author) / Ozev, Sule (Thesis advisor) / Ogras, Umit Y. (Thesis advisor) / Christen, Jennifer Blain (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2020