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- Creators: Bakkaloglu, Bertan
Description
Pulse Density Modulation- (PDM-) based class-D amplifiers can reduce non-linearity and tonal content due to carrier signal in Pulse Width Modulation - (PWM-) based amplifiers. However, their low-voltage analog implementations also require a linear- loop filter and a quantizer. A PDM-based class-D audio amplifier using a frequency-domain quantization is presented in this paper. The digital-intensive frequency domain approach achieves high linearity under low-supply regimes. An analog comparator and a single-bit quantizer are replaced with a Current-Controlled Oscillator- (ICO-) based frequency discriminator. By using the ICO as a phase integrator, a third-order noise shaping is achieved using only two analog integrators. A single-loop, singlebit class-D audio amplifier is presented with an H-bridge switching power stage, which is designed and fabricated on a 0.18 um CMOS process, with 6 layers of metal achieving a total harmonic distortion plus noise (THD+N) of 0.065% and a peak power efficiency of 80% while driving a 4-ohms loudspeaker load. The amplifier can deliver the output power of 280 mW.
ContributorsLee, Junghan (Author) / Bakkaloglu, Bertan (Thesis advisor) / Kiaei, Sayfe (Committee member) / Ozev, Sule (Committee member) / Song, Hongjiang (Committee member) / Arizona State University (Publisher)
Created2011
Description
ABSTRACT To meet stringent market demands, manufacturers must produce Radio Frequency (RF) transceivers that provide wireless communication between electronic components used in consumer products at extremely low cost. Semiconductor manufacturers are in a steady race to increase integration levels through advanced system-on-chip (SoC) technology. The testing costs of these devices tend to increase with higher integration levels. As the integration levels increase and the devices get faster, the need for high-calibre low cost test equipment become highly dominant. However testing the overall system becomes harder and more expensive. Traditionally, the transceiver system is tested in two steps utilizing high-calibre RF instrumentation and mixed-signal testers, with separate measurement setups for transmitter and receiver paths. Impairments in the RF front-end, such as the I/Q gain and phase imbalance and nonlinearity, severely affect the performance of the device. The transceiver needs to be characterized in terms of these impairments in order to guarantee good performance and specification requirements. The motivation factor for this thesis is to come up with a low cost and computationally simple extraction technique of these impairments. In the proposed extraction technique, the mapping between transmitter input signals and receiver output signals are used to extract the impairment and nonlinearity parameters. This is done with the help of detailed mathematical modeling of the transceiver. While the overall behavior is nonlinear, both linear and nonlinear models to be used under different test setups are developed. A two step extraction technique has been proposed in this work. The extraction of system parameters is performed by using the mathematical model developed along with a genetic algorithm implemented in MATLAB. The technique yields good extraction results with reasonable error. It uses simple mathematical operation which makes the extraction fast and computationally simple when compared to other existing techniques such as traditional two step dedicated approach, Nonlinear Solver (NLS) approach, etc. It employs frequency domain analysis of low frequency input and output signals, over cumbersome time domain computations. Thus a test method, including detailed behavioral modeling of the transceiver, appropriate test signal design along with a simple algorithm for extraction is presented.
ContributorsSreenivassan, Aiswariya (Author) / Ozev, Sule (Thesis advisor) / Kiaei, Sayfe (Committee member) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2011
Description
Biosensors aiming at detection of target analytes, such as proteins, microbes, virus, and toxins, are widely needed for various applications including detection of chemical and biological warfare (CBW) agents, biomedicine, environmental monitoring, and drug screening. Surface Plasmon Resonance (SPR), as a surface-sensitive analytical tool, can very sensitively respond to minute changes of refractive index occurring adjacent to a metal film, offering detection limits up to a few ppt (pg/mL). Through SPR, the process of protein adsorption may be monitored in real-time, and transduced into an SPR angle shift. This unique technique bypasses the time-consuming, labor-intensive labeling processes, such as radioisotope and fluorescence labeling. More importantly, the method avoids the modification of the biomarker’s characteristics and behaviors by labeling that often occurs in traditional biosensors. While many transducers, including SPR, offer high sensitivity, selectivity is determined by the bio-receptors. In traditional biosensors, the selectivity is provided by bio-receptors possessing highly specific binding affinity to capture target analytes, yet their use in biosensors are often limited by their relatively-weak binding affinity with analyte, non-specific adsorption, need for optimization conditions, low reproducibility, and difficulties integrating onto the surface of transducers. In order to circumvent the use of bio-receptors, the competitive adsorption of proteins, termed the Vroman effect, is utilized in this work. The Vroman effect was first reported by Vroman and Adams in 1969. The competitive adsorption targeted here occurs among different proteins competing to adsorb to a surface, when more than one type of protein is present. When lower-affinity proteins are adsorbed on the surface first, they can be displaced by higher-affinity proteins arriving at the surface at a later point in time. Moreover, only low-affinity proteins can be displaced by high-affinity proteins, typically possessing higher molecular weight, yet the reverse sequence does not occur. The SPR biosensor based on competitive adsorption is successfully demonstrated to detect fibrinogen and thyroglobulin (Tg) in undiluted human serum and copper ions in drinking water through the denatured albumin.
ContributorsWang, Ran (Author) / Chae, Junseok (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Tsow, Tsing (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2015
Description
Alloying in semiconductors has enabled many civilian technologies in optoelectronic, photonic fields and more. While the phenomenon of alloying is well established in traditional bulk semiconductors, owing to vastly available ternary phase diagrams, the ability to alloy in 2D systems are less clear. Recently anisotropic materials such as ReS2 and TiS3 have been extensively studied due to their direct-gap semiconductor and high mobility behaviors. This work is a report on alloys of ReS2 & ReSe2 and TiS3 &TiSe3.
Alloying selenium into ReS2 in the creation of ReS2xSe2-x, tunes the band gap and changes its vibrational spectrum. Depositing this alloy using bottom up approach has resulted in the loss of crystallinity. This loss of crystallinity was evidenced by grain boundaries and point defect shown by TEM images.
Also, in the creation of TiS3xSe3-x, by alloying Se into TiS3, a fixed ratio of 8% selenium deposit into TiS3 host matrix is observed. This is despite the vastly differing precursor amounts and growth temperatures, as evinced by detailed TEM, EDAX, TEM diffraction, and Raman spectroscopy measurements. This unusual behavior contrasts with other well-known layered material systems such as MoSSe, WMoS2 where continuous alloying can be attained. Cluster expansion theory calculations suggest that only limited composition (x) can be achieved. Considering the fact that TiSe3 vdW crystals have not been synthesized in the past, these alloying rejections can be attributed to energetic instability in the ternary phase diagrams estimated by calculations performed. Overall findings highlight potential means and challenges in achieving stable alloying in promising direct gap and high carrier mobility TiS3 materials.
Alloying selenium into ReS2 in the creation of ReS2xSe2-x, tunes the band gap and changes its vibrational spectrum. Depositing this alloy using bottom up approach has resulted in the loss of crystallinity. This loss of crystallinity was evidenced by grain boundaries and point defect shown by TEM images.
Also, in the creation of TiS3xSe3-x, by alloying Se into TiS3, a fixed ratio of 8% selenium deposit into TiS3 host matrix is observed. This is despite the vastly differing precursor amounts and growth temperatures, as evinced by detailed TEM, EDAX, TEM diffraction, and Raman spectroscopy measurements. This unusual behavior contrasts with other well-known layered material systems such as MoSSe, WMoS2 where continuous alloying can be attained. Cluster expansion theory calculations suggest that only limited composition (x) can be achieved. Considering the fact that TiSe3 vdW crystals have not been synthesized in the past, these alloying rejections can be attributed to energetic instability in the ternary phase diagrams estimated by calculations performed. Overall findings highlight potential means and challenges in achieving stable alloying in promising direct gap and high carrier mobility TiS3 materials.
ContributorsAgarwal, Ashutosh (Author) / Tongay, Sefaattin (Thesis advisor) / Green, Matthew (Committee member) / Zhuang, Houlong (Committee member) / Arizona State University (Publisher)
Created2018
Description
Encapsulant is a key packaging component of photovoltaic (PV) modules, which protects the solar cell from physical, environmental and electrical damages. Ethylene-vinyl acetate (EVA) is one of the major encapsulant materials used in the PV industry. This work focuses on indoor accelerated ultraviolet (UV) stress testing and characterization to investigate the EVA discoloration and delamination in PV modules by using various non-destructive characterization techniques, including current-voltage (IV) measurements, UV fluorescence (UVf) and colorimetry measurements. Mini-modules with glass/EVA/cell/EVA/backsheet construction were fabricated in the laboratory with two types of EVA, UV-cut EVA (UVC) and UV-pass EVA (UVP).
The accelerated UV testing was performed in a UV chamber equipped with UV lights at an ambient temperature of 50°C, little or no humidity and total UV dosage of 400 kWh/m2. The mini-modules were maintained at three different temperatures through UV light heating by placing different thickness of thermal insulation sheets over the backsheet. Also, prior to thermal insulation sheet placement, the backsheet and laminate edges were fully covered with aluminum tape to prevent oxygen diffusion into the module and hence the photobleaching reaction.
The characterization results showed that mini-modules with UV-cut EVA suffered from discoloration while the modules with UV-pass EVA suffered from delamination. UVf imaging technique has the capability to identify the discoloration region in the UVC modules in the very early stage when the discoloration is not visible to the naked eyes, whereas Isc measurement is unable to measure the performance loss until the color becomes visibly darker. YI also provides the direct evidence of yellowing in the encapsulant. As expected, the extent of degradation due to discoloration increases with the increase in module temperature. The Isc loss is dictated by both the regions – discolored area at the center and non-discolored area at the cell edges, whereas the YI is only determined at the discolored region due to low probe area. This led to the limited correlation between Isc and YI in UVC modules.
In case of UVP modules, UV radiation has caused an adverse impact on the interfacial adhesion between the EVA and solar cell, which was detected from UVf images and severe Isc loss. No change in YI confirms that the reason for Isc loss is not due to yellowing but the delamination.
Further, the activation energy of encapsulant discoloration was estimated by using Arrhenius model on two types of data, %Isc drop and ΔYI. The Ea determined from the change in YI data for the EVA encapsulant discoloration reaction without the influence of oxygen and humidity is 0.61 eV. Based on the activation energy determined in this work and hourly weather data of any site, the degradation rate for the encaspulant browning mode can be estimated.
The accelerated UV testing was performed in a UV chamber equipped with UV lights at an ambient temperature of 50°C, little or no humidity and total UV dosage of 400 kWh/m2. The mini-modules were maintained at three different temperatures through UV light heating by placing different thickness of thermal insulation sheets over the backsheet. Also, prior to thermal insulation sheet placement, the backsheet and laminate edges were fully covered with aluminum tape to prevent oxygen diffusion into the module and hence the photobleaching reaction.
The characterization results showed that mini-modules with UV-cut EVA suffered from discoloration while the modules with UV-pass EVA suffered from delamination. UVf imaging technique has the capability to identify the discoloration region in the UVC modules in the very early stage when the discoloration is not visible to the naked eyes, whereas Isc measurement is unable to measure the performance loss until the color becomes visibly darker. YI also provides the direct evidence of yellowing in the encapsulant. As expected, the extent of degradation due to discoloration increases with the increase in module temperature. The Isc loss is dictated by both the regions – discolored area at the center and non-discolored area at the cell edges, whereas the YI is only determined at the discolored region due to low probe area. This led to the limited correlation between Isc and YI in UVC modules.
In case of UVP modules, UV radiation has caused an adverse impact on the interfacial adhesion between the EVA and solar cell, which was detected from UVf images and severe Isc loss. No change in YI confirms that the reason for Isc loss is not due to yellowing but the delamination.
Further, the activation energy of encapsulant discoloration was estimated by using Arrhenius model on two types of data, %Isc drop and ΔYI. The Ea determined from the change in YI data for the EVA encapsulant discoloration reaction without the influence of oxygen and humidity is 0.61 eV. Based on the activation energy determined in this work and hourly weather data of any site, the degradation rate for the encaspulant browning mode can be estimated.
ContributorsDolia, Kshitiz (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Green, Matthew (Thesis advisor) / Srinivasan, Devarajan (Committee member) / Arizona State University (Publisher)
Created2018
Description
The increase in computing power has simultaneously increased the demand for input/output (I/O) bandwidth. Unfortunately, the speed of I/O and memory interconnects have not kept pace. Thus, processor-based systems are I/O and interconnect limited. The memory aggregated bandwidth is not scaling fast enough to keep up with increasing bandwidth demands. The term "memory wall" has been coined to describe this phenomenon.
A new memory bus concept that has the potential to push double data rate (DDR) memory speed to 30 Gbit/s is presented. We propose to map the conventional DDR bus to a microwave link using a multicarrier frequency division multiplexing scheme. The memory bus is formed using a microwave signal carried within a waveguide. We call this approach multicarrier memory channel architecture (MCMCA). In MCMCA, each memory signal is modulated onto an RF carrier using 64-QAM format or higher. The carriers are then routed using substrate integrated waveguide (SIW) interconnects. At the receiver, the memory signals are demodulated and then delivered to SDRAM devices. We pioneered the usage of SIW as memory channel interconnects and demonstrated that it alleviates the memory bandwidth bottleneck. We demonstrated SIW performance superiority over conventional transmission line in immunity to cross-talk and electromagnetic interference. We developed a methodology based on design of experiment (DOE) and response surface method techniques that optimizes the design of SIW interconnects and minimizes its performance fluctuations under material and manufacturing variations. Along with using SIW, we implemented a multicarrier architecture which enabled the aggregated DDR bandwidth to reach 30 Gbit/s. We developed an end-to-end system model in Simulink and demonstrated the MCMCA performance for ultra-high throughput memory channel.
Experimental characterization of the new channel shows that by using judicious frequency division multiplexing, as few as one SIW interconnect is sufficient to transmit the 64 DDR bits. Overall aggregated bus data rate achieves 240 GBytes/s data transfer with EVM not exceeding 2.26% and phase error of 1.07 degree or less.
A new memory bus concept that has the potential to push double data rate (DDR) memory speed to 30 Gbit/s is presented. We propose to map the conventional DDR bus to a microwave link using a multicarrier frequency division multiplexing scheme. The memory bus is formed using a microwave signal carried within a waveguide. We call this approach multicarrier memory channel architecture (MCMCA). In MCMCA, each memory signal is modulated onto an RF carrier using 64-QAM format or higher. The carriers are then routed using substrate integrated waveguide (SIW) interconnects. At the receiver, the memory signals are demodulated and then delivered to SDRAM devices. We pioneered the usage of SIW as memory channel interconnects and demonstrated that it alleviates the memory bandwidth bottleneck. We demonstrated SIW performance superiority over conventional transmission line in immunity to cross-talk and electromagnetic interference. We developed a methodology based on design of experiment (DOE) and response surface method techniques that optimizes the design of SIW interconnects and minimizes its performance fluctuations under material and manufacturing variations. Along with using SIW, we implemented a multicarrier architecture which enabled the aggregated DDR bandwidth to reach 30 Gbit/s. We developed an end-to-end system model in Simulink and demonstrated the MCMCA performance for ultra-high throughput memory channel.
Experimental characterization of the new channel shows that by using judicious frequency division multiplexing, as few as one SIW interconnect is sufficient to transmit the 64 DDR bits. Overall aggregated bus data rate achieves 240 GBytes/s data transfer with EVM not exceeding 2.26% and phase error of 1.07 degree or less.
ContributorsBensalem, Brahim (Author) / Aberle, James T. (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Tirkas, Panayiotis A. (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2018
Description
Recently, two-dimensional (2D) materials have emerged as a new class of materials with highly attractive electronic, optical, magnetic, and thermal properties. However, there exists a sub-category of 2D layers wherein constituent metal atoms are arranged in a way that they form weakly coupled chains confined in the 2D landscape. These weakly coupled chains extend along particular lattice directions and host highly attractive properties including high thermal conduction pathways, high-mobility carriers, and polarized excitons. In a sense, these materials offer a bridge between traditional one-dimensional (1D) materials (nanowires and nanotubes) and 2D layered systems. Therefore, they are often referred as pseudo-1D materials, and are anticipated to impact photonics and optoelectronics fields.
This dissertation focuses on the novel growth routes and fundamental investigation of the physical properties of pseudo-1D materials. Example systems are based on transition metal chalcogenide such as rhenium disulfide (ReS2), titanium trisulfide (TiS3), tantalum trisulfide (TaS3), and titanium-niobium trisulfide (Nb(1-x)TixS3) ternary alloys. Advanced growth, spectroscopy, and microscopy techniques with density functional theory (DFT) calculations have offered the opportunity to understand the properties of these materials both experimentally and theoretically. The first controllable growth of ReS2 flakes with well-defined domain architectures has been established by a state-of-art chemical vapor deposition (CVD) method. High-resolution electron microscopy has offered the very first investigation into the structural pseudo-1D nature of these materials at an atomic level such as the chain-like features, grain boundaries, and local defects.
Pressure-dependent Raman spectroscopy and DFT calculations have investigated the origin of the Raman vibrational modes in TiS3 and TaS3, and discovered the unusual pressure response and its effect on Raman anisotropy. Interestingly, the structural and vibrational anisotropy can be retained in the Nb(1-x)TixS3 alloy system with the presence of phase transition at a nominal Ti alloying limit. Results have offered valuable experimental and theoretical insights into the growth routes as well as the structural, optical, and vibrational properties of typical pseudo-1D layered systems. The overall findings hope to shield lights to the understanding of this entire class of materials and benefit the design of 2D electronics and optoelectronics.
This dissertation focuses on the novel growth routes and fundamental investigation of the physical properties of pseudo-1D materials. Example systems are based on transition metal chalcogenide such as rhenium disulfide (ReS2), titanium trisulfide (TiS3), tantalum trisulfide (TaS3), and titanium-niobium trisulfide (Nb(1-x)TixS3) ternary alloys. Advanced growth, spectroscopy, and microscopy techniques with density functional theory (DFT) calculations have offered the opportunity to understand the properties of these materials both experimentally and theoretically. The first controllable growth of ReS2 flakes with well-defined domain architectures has been established by a state-of-art chemical vapor deposition (CVD) method. High-resolution electron microscopy has offered the very first investigation into the structural pseudo-1D nature of these materials at an atomic level such as the chain-like features, grain boundaries, and local defects.
Pressure-dependent Raman spectroscopy and DFT calculations have investigated the origin of the Raman vibrational modes in TiS3 and TaS3, and discovered the unusual pressure response and its effect on Raman anisotropy. Interestingly, the structural and vibrational anisotropy can be retained in the Nb(1-x)TixS3 alloy system with the presence of phase transition at a nominal Ti alloying limit. Results have offered valuable experimental and theoretical insights into the growth routes as well as the structural, optical, and vibrational properties of typical pseudo-1D layered systems. The overall findings hope to shield lights to the understanding of this entire class of materials and benefit the design of 2D electronics and optoelectronics.
ContributorsWu, Kedi (Author) / Tongay, Sefaattin (Thesis advisor) / Zhuang, Houlong (Committee member) / Green, Matthew (Committee member) / Arizona State University (Publisher)
Created2018
Description
There is an ever-increasing demand for higher bandwidth and data rate ensuing from exploding number of radio frequency integrated systems and devices. As stated in the Shannon-Hartley theorem, the maximum achievable data rate of a communication channel is linearly proportional to the system bandwidth. This is the main driving force behind pushing wireless systems towards millimeter-wave frequency range, where larger bandwidth is available at a higher carrier frequency. Observing the Moor’s law, highly scaled complementary metal–oxide–semiconductor (CMOS) technologies provide fast transistors with a high unity power gain frequency which enables operating at millimeter-wave frequency range. CMOS is the compelling choice for digital and signal processing modules which concurrently offers high computation speed, low power consumption, and mass integration at a high manufacturing yield. One of the main shortcomings of the sub-micron CMOS technologies is the low breakdown voltage of the transistors that limits the dynamic range of the radio frequency (RF) power blocks, especially with the power amplifiers. Low voltage swing restricts the achievable output power which translates into low signal to noise ratio and degraded linearity. Extensive research has been done on proposing new design and IC fabrication techniques with the goal of generating higher output power in CMOS technology. The prominent drawbacks of these solutions are an increased die area, higher cost per design, and lower overall efficiency due to lossy passive components. In this dissertation, CMOS compatible metal–semiconductor field-effect transistor (MESFETs) are utilized to put forward a new solution to enhance the power amplifier’s breakdown voltage, gain and maximum output power. Requiring no change to the conventional CMOS process flow, this low cost approach allows direct incorporation of high voltage power MESFETs into silicon. High voltage MESFETs were employed in a cascode structure to push the amplifier’s cutoff frequency and unity power gain frequency to the 5G and K-band frequency range. This dissertation begins with CMOS compatible MESFET modeling and fabrication steps, and culminates in the discussion of amplifier design and optimization methodology, parasitic de-embedding steps, simulation and measurement results, and high resistivity RF substrate characterization.
ContributorsHabibiMehr, Payam (Author) / Thornton, Trevor John (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Formicone, Gabriele (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2019
Description
Engineering is a multidisciplinary field with a variety of applications. However, since there are so many disciplines of engineering, it is often challenging to find the discipline that best suits an individual interested in engineering. Not knowing which area of engineering most aligns to one’s interests is challenging when deciding on a major and a career. With the development of the Engineering Interest Quiz (EIQ), the goal was to help individuals find the field of engineering that is most similar to their interests. Initially, an Engineering Faculty Survey (EFS) was created to gather information from engineering faculty at Arizona State University (ASU) and to determine keywords that describe each field of engineering. With this list of keywords, the EIQ was developed. Data from the EIQ compared the engineering students’ top three results for the best engineering discipline for them with their current engineering major of study. The data analysis showed that 70% of the respondents had their major listed as one of the top three results they were given and 30% of the respondents did not have their major listed. Of that 70%, 64% had their current major listed as the highest or tied for the highest percentage and 36% had their major listed as the second or third highest percentage. Furthermore, the EIQ data was compared between genders. Only 33% of the male students had their current major listed as their highest percentage, but 55% had their major as one of their top three results. Women had higher percentages with 63% listing their current major as their highest percentage and 81% listing it in the top three of their final results.
ContributorsWagner, Avery Rose (Co-author) / Lucca, Claudia (Co-author) / Taylor, David (Thesis director) / Miller, Cindy (Committee member) / Chemical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2020-05
Description
Hydrocephalus is a chronic medical condition characterized by the excessive accumulation of cerebrospinal fluid in the brain. It is estimated that 1-2 of every 1000 babies in the United States is born with congenital hydrocephalus, with many individuals acquiring hydrocephalus later in life through brain injury. Despite these alarming statistics, current shunts for the treatment of hydrocephalus display operational failure rates as high as 40-50% within two years following implantation. Failure of current shunts is attributed to complexity of design, external implantation, and the requirement of multiple catheters. The presented hydrogel wafer check valve avoids all the debilitating features of current shunts, relying only on the swelling of hydrogel for operation, and is designed to directly replace failed arachnoid granulations- the brain’s natural cerebrospinal fluid drainage valves. The valve was validated via bench-top (1) hydrodynamic pressure-flow response characterizations, (2) transient response analysis, and (3) overtime performance response in brain-analogous conditions. In-vitro measurements display operation in range of natural CSF draining (cracking pressure, PT ~ 1–110 mmH2O and outflow hydraulic resistance, Rh ~ 24 – 152 mmH2O/mL/min), negligible reverse flow leakages (flow, QO > -10 µL/min), and demonstrate the valve’s operational reproducibility of this new valve as an implantable treatment.
ContributorsAmjad, Usamma Muhammad (Author) / Chae, Junseok (Thesis director) / Appel, Jennie (Committee member) / Chemical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2016-05