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- Creators: Goryll, Michael
Description
Zinc telluride (ZnTe) is an attractive II-VI compound semiconductor with a direct
bandgap of 2.26 eV that is used in many applications in optoelectronic devices. Compared
to the two dimensional (2D) thin-film semiconductors, one-dimensional (1D)
nanowires can have different electronic properties for potential novel applications.
In this work, we present the study of ZnTe nanowires (NWs) that are synthesized
through a simple vapor-liquid-solid (VLS) method. By controlling the presence or
the absence of Au catalysts and controlling the growth parameters such as growth
temperature, various growth morphologies of ZnTe, such as thin films and nanowires
can be obtained. The characterization of the ZnTe nanostructures and films was
performed using scanning electron microscope (SEM), energy-dispersive X-ray spectroscopy
(EDX), high- resolution transmission electron microscope (HRTEM), X-ray
diffraction (XRD), photoluminescence (PL), Raman spectroscopy and light scattering
measurement. After confirming the crystal purity of ZnTe, two-terminal diodes and
three-terminal transistors were fabricated with both nanowire and planar nano-sheet
configurations, in order to correlate the nanostructure geometry to device performance
including field effect mobility, Schottky barrier characteristics, and turn-on
characteristics. Additionally, optoelectronic properties such as photoconductive gain
and responsivity were compared against morphology. Finally, ZnTe was explored in
conjunction with ZnO in order to form type-II band alignment in a core-shell nanostructure.
Various characterization techniques including scanning electron microscopy,
energy-dispersive X-ray spectroscopy , x-ray diffraction, Raman spectroscopy, UV-vis
reflectance spectra and photoluminescence were used to investigate the modification
of ZnO/ZnTe core/shell structure properties. In PL spectra, the eliminated PL intensity
of ZnO wires is primarily attributed to the efficient charge transfer process
occurring between ZnO and ZnTe, due to the band alignment in the core/shell structure. Moreover, the result of UV-vis reflectance spectra corresponds to the band
gap energy of ZnO and ZnTe, respectively, which confirm that the sample consists of
ZnO/ZnTe core/shell structure of good quality.
bandgap of 2.26 eV that is used in many applications in optoelectronic devices. Compared
to the two dimensional (2D) thin-film semiconductors, one-dimensional (1D)
nanowires can have different electronic properties for potential novel applications.
In this work, we present the study of ZnTe nanowires (NWs) that are synthesized
through a simple vapor-liquid-solid (VLS) method. By controlling the presence or
the absence of Au catalysts and controlling the growth parameters such as growth
temperature, various growth morphologies of ZnTe, such as thin films and nanowires
can be obtained. The characterization of the ZnTe nanostructures and films was
performed using scanning electron microscope (SEM), energy-dispersive X-ray spectroscopy
(EDX), high- resolution transmission electron microscope (HRTEM), X-ray
diffraction (XRD), photoluminescence (PL), Raman spectroscopy and light scattering
measurement. After confirming the crystal purity of ZnTe, two-terminal diodes and
three-terminal transistors were fabricated with both nanowire and planar nano-sheet
configurations, in order to correlate the nanostructure geometry to device performance
including field effect mobility, Schottky barrier characteristics, and turn-on
characteristics. Additionally, optoelectronic properties such as photoconductive gain
and responsivity were compared against morphology. Finally, ZnTe was explored in
conjunction with ZnO in order to form type-II band alignment in a core-shell nanostructure.
Various characterization techniques including scanning electron microscopy,
energy-dispersive X-ray spectroscopy , x-ray diffraction, Raman spectroscopy, UV-vis
reflectance spectra and photoluminescence were used to investigate the modification
of ZnO/ZnTe core/shell structure properties. In PL spectra, the eliminated PL intensity
of ZnO wires is primarily attributed to the efficient charge transfer process
occurring between ZnO and ZnTe, due to the band alignment in the core/shell structure. Moreover, the result of UV-vis reflectance spectra corresponds to the band
gap energy of ZnO and ZnTe, respectively, which confirm that the sample consists of
ZnO/ZnTe core/shell structure of good quality.
ContributorsPeng, Jhih-hong (Author) / Yu, Hongbin (Thesis advisor) / Roedel, Ronald (Committee member) / Goryll, Michael (Committee member) / Zhao, Yuji (Committee member) / Arizona State University (Publisher)
Created2017
Description
A Microbial fuel cell (MFC) is a bio-inspired carbon-neutral, renewable electrochemical converter to extract electricity from catabolic reaction of micro-organisms. It is a promising technology capable of directly converting the abundant biomass on the planet into electricity and potentially alleviate the emerging global warming and energy crisis. The current and power density of MFCs are low compared with conventional energy conversion techniques. Since its debut in 2002, many studies have been performed by adopting a variety of new configurations and structures to improve the power density. The reported maximum areal and volumetric power densities range from 19 mW/m2 to 1.57 W/m2 and from 6.3 W/m3 to 392 W/m3, respectively, which are still low compared with conventional energy conversion techniques. In this dissertation, the impact of scaling effect on the performance of MFCs are investigated, and it is found that by scaling down the characteristic length of MFCs, the surface area to volume ratio increases and the current and power density improves. As a result, a miniaturized MFC fabricated by Micro-Electro-Mechanical System(MEMS) technology with gold anode is presented in this dissertation, which demonstrate a high power density of 3300 W/m3. The performance of the MEMS MFC is further improved by adopting anodes with higher surface area to volume ratio, such as carbon nanotube (CNT) and graphene based anodes, and the maximum power density is further improved to a record high power density of 11220 W/m3. A novel supercapacitor by regulating the respiration of the bacteria is also presented, and a high power density of 531.2 A/m2 (1,060,000 A/m3) and 197.5 W/m2 (395,000 W/m3), respectively, are marked, which are one to two orders of magnitude higher than any previously reported microbial electrochemical techniques.
ContributorsRen, Hao (Author) / Chae, Junseok (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Phillips, Stephen (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2016
Description
The partially-depleted (PD) silicon Metal Semiconductor Field Effect Transistor (MESFET) is becoming more and more attractive for analog and RF applications due to its high breakdown voltage. Compared to conventional CMOS high voltage transistors, the silicon MESFET can be fabricated in commercial standard Silicon-on-Insulator (SOI) CMOS foundries without any change to the process. The transition frequency of the device is demonstrated to be 45GHz, which makes the MESFET suitable for applications in high power RF power amplifier designs. Also, high breakdown voltage and low turn-on resistance make it the ideal choice for switches in the switching regulator designs. One of the anticipated applications of the MESFET is for the pass device for a low dropout linear regulator. Conventional NMOS and PMOS linear regulators suffer from high dropout voltage, low bandwidth and poor stability issues. In contrast, the N-MESFET pass transistor can provide an ultra-low dropout voltage and high bandwidth without the need for an external compensation capacitor to ensure stability. In this thesis, the design theory and problems of the conventional linear regulators are discussed. N-MESFET low dropout regulators are evaluated and characterized. The error amplifier used a folded cascode architecture with gain boosting. The source follower topology is utilized as the buffer to sink the gate leakage current from the MESFET. A shunt-feedback transistor is added to reduce the output impedance and provide the current adaptively. Measurement results show that the dropout voltage is less than 150 mV for a 1A load current at 1.8V output. Radiation measurements were done for discrete MESFET and fully integrated LDO regulators, which demonstrate their radiation tolerance ability for aerospace applications.
ContributorsChen, Bo (Author) / Thornton, Trevor (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
The constant scaling of supply voltages in state-of-the-art CMOS processes has led to severe limitations for many analog circuit applications. Some CMOS processes have addressed this issue by adding high voltage MOSFETs to their process. Although it can be a completely viable solution, it usually requires a changing of the process flow or adding additional steps, which in turn, leads to an increase in fabrication costs. Si-MESFETs (silicon-metal-semiconductor-field-effect-transistors) from Arizona State University (ASU) on the other hand, have an inherent high voltage capability and can be added to any silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) CMOS process free of cost. This has been proved at five different commercial foundries on technologies ranging from 0.5 to 0.15 μm. Another critical issue facing CMOS processes on insulated substrates is the scaling of the thin silicon channel. Consequently, the future direction of SOI/SOS CMOS transistors may trend away from partially depleted (PD) transistors and towards fully depleted (FD) devices. FD-CMOS are already being implemented in multiple applications due to their very low power capability. Since the FD-CMOS market only figures to grow, it is appropriate that MESFETs also be developed for these processes. The beginning of this thesis will focus on the device aspects of both PD and FD-MESFETs including their layout structure, DC and RF characteristics, and breakdown voltage. The second half will then shift the focus towards implementing both types of MESFETs in an analog circuit application. Aside from their high breakdown ability, MESFETs also feature depletion mode operation, easy to adjust but well controlled threshold voltages, and fT's up to 45 GHz. Those unique characteristics can allow certain designs that were previously difficult to implement or prohibitively expensive using conventional technologies to now be achieved. One such application which benefits is low dropout regulators (LDO). By utilizing an n-channel MESFET as the pass transistor, a LDO featuring very low dropout voltage, fast transient response, and stable operation can be achieved without an external capacitance. With the focus of this thesis being MESFET based LDOs, the device discussion will be mostly tailored towards optimally designing MESFETs for this particular application.
ContributorsLepkowski, William (Author) / Thornton, Trevor (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2010
ContributorsFerner, Anthony (Performer) / Novak, Gail (Pianist) (Performer) / ASU Library. Music Library (Publisher)
Created2005-10-16
Description
A general review of film growth with various mechanisms is given. Additives and their potential effects on film properties are also discussed. Experimental light-induced aluminum (Al) plating tool design is discussed. Light-induced electroplating of Al as the front electrode on the n-type emitter of silicon (Si) solar cells is proposed as a substitute for screen-printed Silver (Ag). The advantages and disadvantages of Al over copper (Cu) as a suitable Ag replacement are examined. Optimization of the power given to a green laser for silicon nitride (SiNx) anitreflection coating patterning is performed. Laser damage and contamination removal conditions on post-patterned cell surfaces are identified. Plating and post-annealing temperature effects on Al morphology and film resistivity are explored. Morphology and resistivity improvement of the Al film are also investigated through several plating additives. The lowest resistivity of 3.1 µΩ-cm is given by nicotinic acid. Laser induced damage to the cell emitter experimentally limits the contact resistivity between light-induced Al and Si to approximately 69 mΩ-cm2. Phosphorus pentachloride (PCl5) is introduced into the plating bath and improved the the contact resistivity between light induced Al and Si to a range of 0.1-1 mΩ-cm2. Secondary ion mass spectroscopy (SIMS) was performed on a film deposited with PCl5 and showed a phosphorus peak, indicating emitter phosphorus concentration may be the reason for the low contact resistivity between light-induced Al and Si. SEM also shows that PCl5 improves Al film density and plating throwing power. Post plating annealing performed at a temperature of 500°C allows Al to spike through the thin n-type emitter causing cell failure. Atmospheric moisture causes poor process reproducibility.
ContributorsRicci, Lewis (Author) / Tao, Meng (Thesis advisor) / Goryll, Michael (Committee member) / Kozicki, Michael (Committee member) / Yu, Hongbin (Committee member) / Arizona State University (Publisher)
Created2021
Description
In-field characterization of photovoltaics is crucial to understanding performance and degradation mechanisms, subsequently improving overall reliability and lifespans. Current outdoor characterization is often limited by logistical difficulties, variable weather, and requirements to measure during peak production hours. It becomes a challenge to find a characterization technique that is affordable with a low impact on system performance while still providing useful device parameters. For added complexity, this characterization technique must have the ability to scale for implementation in large powerplant applications. This dissertation addresses some of the challenges of outdoor characterization by expanding the knowledge of a well-known indoor technique referred to as Suns-VOC. Suns-VOC provides a pseudo current-voltage curve that is free of any effects from series resistance. Device parameters can be extracted from this pseudo I-V curve, allowing for subsequent degradation analysis. This work introduces how to use Suns-VOC outdoors while normalizing results based on the different effects of environmental conditions. This technique is validated on single-cells, modules, and small arrays with accuracies capable of measuring yearly degradation. An adaptation to Suns-VOC, referred to as Suns-Voltage-Resistor (Suns-VR), is also introduced to complement the results from Suns-VOC. This work can potentially be used to provide a diagnostic tool for outdoor characterization in various applications, including residential, commercial, and industrial PV systems.
ContributorsKillam, Alexander Cameron (Author) / Bowden, Stuart G (Thesis advisor) / Goryll, Michael (Committee member) / Augusto, Andre (Committee member) / Rand, James (Committee member) / Arizona State University (Publisher)
Created2022
Description
With the demand growing for more sustainable forms of energy in replacement of fossil fuels, a major obstacle arises in the end-of life solar modules that are disposed of in landfills. Aside from the hazardous materials, silicon solar modules contain valuable and scarce materials such as silver. Silver is used in many industries and many applications therefore the recycling and recovering of it is financially beneficial. The purpose of this research was to achieve high purity and recovery of silver using hydrofluoric acid. The following work presents the feasibility of silver recovery through the process of leaching and electrowinning by examining the percent recovery and cathodic coulombic efficiency, followed by a chemical analysis to determine the purity. Varying conditions in leaching and electrowinning parameters are conducted in a synthetic solution to determine the effect on silver recovery and cathodic coulombic efficiency. It was determined that the silver recovery was dependent on the applied potential, system configuration and time. The system is capable of recovery rates of over 95% at -1 V. The system is further tested on solar cells to prove that silver can be recovered. There was over 99% purity from the experiments conducted in synthetic solution and from solar cells. Additionally, a circular chemistry is proposed that allows the reuse of hydrofluoric acid for leaching and electrowinning.
ContributorsChen, Theresa (Author) / Tao, Meng (Thesis advisor) / Deng, Shuguang (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2024
Description
The goal of any solar photovoltaic (PV) system is to generate maximum energy throughout its lifetime. The parameters that can affect PV module power output include: solar irradiance, temperature, soil accumulation, shading, encapsulant browning, encapsulant delamination, series resistance increase due to solder bond degradation and corrosion and shunt resistance decrease due to potential induced degradation, etc. Several PV modules together in series makes up a string, and in a power plant there are a number of these strings in parallel which can be referred to as an array. Ideally, PV modules in a string should be identically matched to attain maximum power output from the entire string. Any underperforming module or mismatch among modules within a string can reduce the power output. The goal of this project is to quickly identify and quantitatively determine the underperforming module(s) in an operating string without the use of an I-V curve tracer, irradiance sensor or temperature sensor. This goal was achieved by utilizing Radiovoltmeters (RVM). In this project, it is demonstrated that the voltages at maximum power point (Vmax) of all the individual modules in a string can be simultaneously and quantitatively obtained using RVMs at a single irradiance, single module operating temperature, single spectrum and single angle of incidence. By combining these individual module voltages (Vmax) with the string current (Imax) using a Hall sensor, the power output of individual modules can be obtained, quickly and quantitatively.
ContributorsTahghighi, Arash (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Rogers, Bradley (Committee member) / Srinivasan, Devarajan (Committee member) / Arizona State University (Publisher)
Created2019
Description
In the current photovoltaic (PV) industry, the O&M (operations and maintenance) personnel in the field primarily utilize three approaches to identify the underperforming or defective modules in a string: i) EL (electroluminescence) imaging of all the modules in the string; ii) IR (infrared) thermal imaging of all the modules in the string; and, iii) current-voltage (I-V) curve tracing of all the modules in the string. In the first and second approaches, the EL images are used to detect the modules with broken cells, and the IR images are used to detect the modules with hotspot cells, respectively. These two methods may identify the modules with defective cells only semi-qualitatively, but not accurately and quantitatively. The third method, I-V curve tracing, is a quantitative method to identify the underperforming modules in a string, but it is an extremely time consuming, labor-intensive, and highly ambient conditions dependent method. Since the I-V curves of individual modules in a string are obtained by disconnecting them individually at different irradiance levels, module operating temperatures, angle of incidences (AOI) and air-masses/spectra, all these measured curves are required to be translated to a single reporting condition (SRC) of a single irradiance, single temperature, single AOI and single spectrum. These translations are not only time consuming but are also prone to inaccuracy due to inherent issues in the translation models. Therefore, the current challenges in using the traditional I-V tracers are related to: i) obtaining I-V curves simultaneously of all the modules and substrings in a string at a single irradiance, operating temperature, irradiance spectrum and angle of incidence due to changing weather parameters and sun positions during the measurements, ii) safety of field personnel when disconnecting and reconnecting of cables in high voltage systems (especially field aged connectors), and iii) enormous time and hardship for the test personnel in harsh outdoor climatic conditions. In this thesis work, a non-contact I-V (NCIV) curve tracing tool has been integrated and implemented to address the above mentioned three challenges of the traditional I-V tracers.
This work compares I-V curves obtained using a traditional I-V curve tracer with the I-V curves obtained using a NCIV curve tracer for the string, substring and individual modules of crystalline silicon (c-Si) and cadmium telluride (CdTe) technologies. The NCIV curve tracer equipment used in this study was integrated using three commercially available components: non-contact voltmeters (NCV) with voltage probes to measure the voltages of substrings/modules in a string, a hall sensor to measure the string current and a DAS (data acquisition system) for simultaneous collection of the voltage data obtained from the NCVs and the current data obtained from the hall sensor. This study demonstrates the concept and accuracy of the NCIV curve tracer by comparing the I-V curves obtained using a traditional capacitor-based tracer and the NCIV curve tracer in a three-module string of c-Si modules and of CdTe modules under natural sunlight with uniform light conditions on all the modules in the string and with partially shading one or more of the modules in the string to simulate and quantitatively detect the underperforming module(s) in a string.
This work compares I-V curves obtained using a traditional I-V curve tracer with the I-V curves obtained using a NCIV curve tracer for the string, substring and individual modules of crystalline silicon (c-Si) and cadmium telluride (CdTe) technologies. The NCIV curve tracer equipment used in this study was integrated using three commercially available components: non-contact voltmeters (NCV) with voltage probes to measure the voltages of substrings/modules in a string, a hall sensor to measure the string current and a DAS (data acquisition system) for simultaneous collection of the voltage data obtained from the NCVs and the current data obtained from the hall sensor. This study demonstrates the concept and accuracy of the NCIV curve tracer by comparing the I-V curves obtained using a traditional capacitor-based tracer and the NCIV curve tracer in a three-module string of c-Si modules and of CdTe modules under natural sunlight with uniform light conditions on all the modules in the string and with partially shading one or more of the modules in the string to simulate and quantitatively detect the underperforming module(s) in a string.
ContributorsMurali, Sanjay (Author) / Tamizhmani, Govindasamy (Thesis advisor) / Srinivasan, Devarajan (Committee member) / Rogers, Bradley (Committee member) / Arizona State University (Publisher)
Created2020