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- All Subjects: engineering
- Creators: Bakkaloglu, Bertan
Description
Pulse Density Modulation- (PDM-) based class-D amplifiers can reduce non-linearity and tonal content due to carrier signal in Pulse Width Modulation - (PWM-) based amplifiers. However, their low-voltage analog implementations also require a linear- loop filter and a quantizer. A PDM-based class-D audio amplifier using a frequency-domain quantization is presented in this paper. The digital-intensive frequency domain approach achieves high linearity under low-supply regimes. An analog comparator and a single-bit quantizer are replaced with a Current-Controlled Oscillator- (ICO-) based frequency discriminator. By using the ICO as a phase integrator, a third-order noise shaping is achieved using only two analog integrators. A single-loop, singlebit class-D audio amplifier is presented with an H-bridge switching power stage, which is designed and fabricated on a 0.18 um CMOS process, with 6 layers of metal achieving a total harmonic distortion plus noise (THD+N) of 0.065% and a peak power efficiency of 80% while driving a 4-ohms loudspeaker load. The amplifier can deliver the output power of 280 mW.
ContributorsLee, Junghan (Author) / Bakkaloglu, Bertan (Thesis advisor) / Kiaei, Sayfe (Committee member) / Ozev, Sule (Committee member) / Song, Hongjiang (Committee member) / Arizona State University (Publisher)
Created2011
Description
ABSTRACT To meet stringent market demands, manufacturers must produce Radio Frequency (RF) transceivers that provide wireless communication between electronic components used in consumer products at extremely low cost. Semiconductor manufacturers are in a steady race to increase integration levels through advanced system-on-chip (SoC) technology. The testing costs of these devices tend to increase with higher integration levels. As the integration levels increase and the devices get faster, the need for high-calibre low cost test equipment become highly dominant. However testing the overall system becomes harder and more expensive. Traditionally, the transceiver system is tested in two steps utilizing high-calibre RF instrumentation and mixed-signal testers, with separate measurement setups for transmitter and receiver paths. Impairments in the RF front-end, such as the I/Q gain and phase imbalance and nonlinearity, severely affect the performance of the device. The transceiver needs to be characterized in terms of these impairments in order to guarantee good performance and specification requirements. The motivation factor for this thesis is to come up with a low cost and computationally simple extraction technique of these impairments. In the proposed extraction technique, the mapping between transmitter input signals and receiver output signals are used to extract the impairment and nonlinearity parameters. This is done with the help of detailed mathematical modeling of the transceiver. While the overall behavior is nonlinear, both linear and nonlinear models to be used under different test setups are developed. A two step extraction technique has been proposed in this work. The extraction of system parameters is performed by using the mathematical model developed along with a genetic algorithm implemented in MATLAB. The technique yields good extraction results with reasonable error. It uses simple mathematical operation which makes the extraction fast and computationally simple when compared to other existing techniques such as traditional two step dedicated approach, Nonlinear Solver (NLS) approach, etc. It employs frequency domain analysis of low frequency input and output signals, over cumbersome time domain computations. Thus a test method, including detailed behavioral modeling of the transceiver, appropriate test signal design along with a simple algorithm for extraction is presented.
ContributorsSreenivassan, Aiswariya (Author) / Ozev, Sule (Thesis advisor) / Kiaei, Sayfe (Committee member) / Bakkaloglu, Bertan (Committee member) / Arizona State University (Publisher)
Created2011
Description
The partially-depleted (PD) silicon Metal Semiconductor Field Effect Transistor (MESFET) is becoming more and more attractive for analog and RF applications due to its high breakdown voltage. Compared to conventional CMOS high voltage transistors, the silicon MESFET can be fabricated in commercial standard Silicon-on-Insulator (SOI) CMOS foundries without any change to the process. The transition frequency of the device is demonstrated to be 45GHz, which makes the MESFET suitable for applications in high power RF power amplifier designs. Also, high breakdown voltage and low turn-on resistance make it the ideal choice for switches in the switching regulator designs. One of the anticipated applications of the MESFET is for the pass device for a low dropout linear regulator. Conventional NMOS and PMOS linear regulators suffer from high dropout voltage, low bandwidth and poor stability issues. In contrast, the N-MESFET pass transistor can provide an ultra-low dropout voltage and high bandwidth without the need for an external compensation capacitor to ensure stability. In this thesis, the design theory and problems of the conventional linear regulators are discussed. N-MESFET low dropout regulators are evaluated and characterized. The error amplifier used a folded cascode architecture with gain boosting. The source follower topology is utilized as the buffer to sink the gate leakage current from the MESFET. A shunt-feedback transistor is added to reduce the output impedance and provide the current adaptively. Measurement results show that the dropout voltage is less than 150 mV for a 1A load current at 1.8V output. Radiation measurements were done for discrete MESFET and fully integrated LDO regulators, which demonstrate their radiation tolerance ability for aerospace applications.
ContributorsChen, Bo (Author) / Thornton, Trevor (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
Alkali-activated aluminosilicates, commonly known as "geopolymers", are being increasingly studied as a potential replacement for Portland cement. These binders use an alkaline activator, typically alkali silicates, alkali hydroxides or a combination of both along with a silica-and-alumina rich material, such as fly ash or slag, to form a final product with properties comparable to or better than those of ordinary Portland cement. The kinetics of alkali activation is highly dependent on the chemical composition of the binder material and the activator concentration. The influence of binder composition (slag, fly ash or both), different levels of alkalinity, expressed using the ratios of Na2O-to-binders (n) and activator SiO2-to-Na2O ratios (Ms), on the early age behavior in sodium silicate solution (waterglass) activated fly ash-slag blended systems is discussed in this thesis. Optimal binder composition and the n values are selected based on the setting times. Higher activator alkalinity (n value) is required when the amount of slag in the fly ash-slag blended mixtures is reduced. Isothermal calorimetry is performed to evaluate the early age hydration process and to understand the reaction kinetics of the alkali activated systems. The differences in the calorimetric signatures between waterglass activated slag and fly ash-slag blends facilitate an understanding of the impact of the binder composition on the reaction rates. Kinetic modeling is used to quantify the differences in reaction kinetics using the Exponential as well as the Knudsen method. The influence of temperature on the reaction kinetics of activated slag and fly ash-slag blends based on the hydration parameters are discussed. Very high compressive strengths can be obtained both at early ages as well as later ages (more than 70 MPa) with waterglass activated slag mortars. Compressive strength decreases with the increase in the fly ash content. A qualitative evidence of leaching is presented through the electrical conductivity changes in the saturating solution. The impact of leaching and the strength loss is found to be generally higher for the mixtures made using a higher activator Ms and a higher n value. Attenuated Total Reflectance-Fourier Transform Infrared Spectroscopy (ATR-FTIR) is used to obtain information about the reaction products.
ContributorsChithiraputhiran, Sundara Raman (Author) / Neithalath, Narayanan (Thesis advisor) / Rajan, Subramaniyam D (Committee member) / Mobasher, Barzin (Committee member) / Arizona State University (Publisher)
Created2012
Description
The alkali activation of aluminosilicate materials as binder systems derived from industrial byproducts have been extensively studied due to the advantages they offer in terms enhanced material properties, while increasing sustainability by the reuse of industrial waste and byproducts and reducing the adverse impacts of OPC production. Fly ash and ground granulated blast furnace slag are commonly used for their content of soluble silica and aluminate species that can undergo dissolution, polymerization with the alkali, condensation on particle surfaces and solidification. The following topics are the focus of this thesis: (i) the use of microwave assisted thermal processing, in addition to heat-curing as a means of alkali activation and (ii) the relative effects of alkali cations (K or Na) in the activator (powder activators) on the mechanical properties and chemical structure of these systems. Unsuitable curing conditions instigate carbonation, which in turn lowers the pH of the system causing significant reductions in the rate of fly ash activation and mechanical strength development. This study explores the effects of sealing the samples during the curing process, which effectively traps the free water in the system, and allows for increased aluminosilicate activation. The use of microwave-curing in lieu of thermal-curing is also studied in order to reduce energy consumption and for its ability to provide fast volumetric heating. Potassium-based powder activators dry blended into the slag binder system is shown to be effective in obtaining very high compressive strengths under moist curing conditions (greater than 70 MPa), whereas sodium-based powder activation is much weaker (around 25 MPa). Compressive strength decreases when fly ash is introduced into the system. Isothermal calorimetry is used to evaluate the early hydration process, and to understand the reaction kinetics of the alkali powder activated systems. A qualitative evidence of the alkali-hydroxide concentration of the paste pore solution through the use of electrical conductivity measurements is also presented, with the results indicating the ion concentration of alkali is more prevalent in the pore solution of potassium-based systems. The use of advanced spectroscopic and thermal analysis techniques to distinguish the influence of studied parameters is also discussed.
ContributorsChowdhury, Ussala (Author) / Neithalath, Narayanan (Thesis advisor) / Rajan, Subramanium D. (Committee member) / Mobasher, Barzin (Committee member) / Arizona State University (Publisher)
Created2013
Description
ABSTRACT Ongoing research into wireless transceivers in the 60 GHz band is required to address the demand for high data rate communications systems at a frequency where signal propagation is challenging even over short ranges. This thesis proposes a mixer architecture in Complementary Metal Oxide Semiconductor (CMOS) technology that uses a voltage controlled oscillator (VCO) operating at a fractional multiple of the desired output signal. The proposed topology is different from conventional subharmonic mixing in that the oscillator phase generation circuitry usually required for such a circuit is unnecessary. Analysis and simulations are performed on the proposed mixer circuit in an IBM 90 nm RF process on a 1.2 V supply. A typical RF transmitter system is considered in determining the block requirements needed for the mixer to meet the IEEE 802.11ad 60 GHz Draft Physical Layer Specification. The proposed circuit has a conversion loss of 21 dB at 60 GHz with a 5 dBm LO power at 20 GHz. Input-referred third-order intercept point (IIP3) is 2.93 dBm. The gain and linearity of the proposed mixer are sufficient for Orthogonal Frequency Division Multiplexing (OFDM) modulation at 60 GHz with a transmitted data rate of over 4 Gbps.
ContributorsMartino, Todd Jeffrey (Author) / Kiaei, Sayfe (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Aberle, James T., 1961- (Committee member) / Arizona State University (Publisher)
Created2010
Description
The constant scaling of supply voltages in state-of-the-art CMOS processes has led to severe limitations for many analog circuit applications. Some CMOS processes have addressed this issue by adding high voltage MOSFETs to their process. Although it can be a completely viable solution, it usually requires a changing of the process flow or adding additional steps, which in turn, leads to an increase in fabrication costs. Si-MESFETs (silicon-metal-semiconductor-field-effect-transistors) from Arizona State University (ASU) on the other hand, have an inherent high voltage capability and can be added to any silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) CMOS process free of cost. This has been proved at five different commercial foundries on technologies ranging from 0.5 to 0.15 μm. Another critical issue facing CMOS processes on insulated substrates is the scaling of the thin silicon channel. Consequently, the future direction of SOI/SOS CMOS transistors may trend away from partially depleted (PD) transistors and towards fully depleted (FD) devices. FD-CMOS are already being implemented in multiple applications due to their very low power capability. Since the FD-CMOS market only figures to grow, it is appropriate that MESFETs also be developed for these processes. The beginning of this thesis will focus on the device aspects of both PD and FD-MESFETs including their layout structure, DC and RF characteristics, and breakdown voltage. The second half will then shift the focus towards implementing both types of MESFETs in an analog circuit application. Aside from their high breakdown ability, MESFETs also feature depletion mode operation, easy to adjust but well controlled threshold voltages, and fT's up to 45 GHz. Those unique characteristics can allow certain designs that were previously difficult to implement or prohibitively expensive using conventional technologies to now be achieved. One such application which benefits is low dropout regulators (LDO). By utilizing an n-channel MESFET as the pass transistor, a LDO featuring very low dropout voltage, fast transient response, and stable operation can be achieved without an external capacitance. With the focus of this thesis being MESFET based LDOs, the device discussion will be mostly tailored towards optimally designing MESFETs for this particular application.
ContributorsLepkowski, William (Author) / Thornton, Trevor (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2010
Description
This study investigates the energy saving potential of high albedo roof coatings which are designed to reflect a large proportion of solar radiation compared to traditional roofing materials. Using EnergyPlus simulations, the efficacy of silicone, acrylic, and aluminum roof coatings is assessed across two prototype commercial buildings—a standalone retail (2,294 m2 or 24,692 ft2) and a strip-mall (2,090 m2 or 22,500 ft2)—located in four cities: Phoenix, Houston, Los Angeles, and Miami. The performance of reflective coatings was compared with respect to a black roof having a solar reflectance of 5% and a thermal emittance of 90%. A sensitivity analysis was done to assess the impact of solar reflectance and thermal emittance on the ability of roof coatings to reduce surface temperatures, a key factor behind energy savings. This factor plays a crucial role in all three heat transfer mechanisms: conduction, convection, and radiation. The rooftop surface temperature exhibits considerable variation depending on the solar reflectance and thermal emittance attributes of the roof. A contour plot between these properties reveals that high values of both result in reduced cooling needs and a heating penalty which is insignificant when compared with cooling savings for cooling-dominant climates like Phoenix where the cooling demand significantly outweighs the heating demand, yielding significant energy savings. Furthermore, the study also investigates the effects of reflective coatings on buildings that have photovoltaic solar panels installed on them. This includes exploring their impact on building HVAC loads, as well as the performance improvement due to the reduced temperatures beneath them.
ContributorsSharma, Ajay Kumar (Author) / Phelan, Patrick (Thesis advisor) / Neithalath, Narayanan (Committee member) / Milcarek, Ryan (Committee member) / Arizona State University (Publisher)
Created2024
Description
Phase change materials (PCMs) are combined sensible-and-latent thermal energy storage materials that can be used to store and dissipate energy in the form of heat. PCMs incorporated into wall-element systems have been well-studied with respect to energy efficiency of building envelopes. New applications of PCMs in infrastructural concrete, e.g., for mitigating early-age cracking and freeze-and-thaw induced damage, have also been proposed. Hence, the focus of this dissertation is to develop a detailed understanding of the physic-chemical and thermo-mechanical characteristics of cementitious systems and novel coating systems for wall-elements containing PCM. The initial phase of this work assesses the influence of interface properties and inter-inclusion interactions between microencapsulated PCM, macroencapsulated PCM, and the cementitious matrix. The fact that these inclusions within the composites are by themselves heterogeneous, and contain multiple components necessitate careful application of models to predict the thermal properties. The next phase observes the influence of PCM inclusions on the fracture and fatigue behavior of PCM-cementitious composites. The compliant nature of the inclusion creates less variability in the fatigue life for these composites subjected to cyclic loading. The incorporation of small amounts of PCM is found to slightly improve the fracture properties compared to PCM free cementitious composites. Inelastic deformations at the crack-tip in the direction of crack opening are influenced by the microscale PCM inclusions. After initial laboratory characterization of the microstructure and evaluation of the thermo-mechanical performance of these systems, field scale applicability and performance were evaluated. Wireless temperature and strain sensors for smart monitoring were embedded within a conventional portland cement concrete pavement (PCCP) and a thermal control smart concrete pavement (TCSCP) containing PCM. The TCSCP exhibited enhanced thermal performance over multiple heating and cooling cycles. PCCP showed significant shrinkage behavior as a result of compressive strains in the reinforcement that were twice that of the TCSCP. For building applications, novel PCM-composites coatings were developed to improve and extend the thermal efficiency. These coatings demonstrated a delay in temperature by up to four hours and were found to be more cost-effective than traditional building insulating materials.
The results of this work prove the feasibility of PCMs as a temperature-regulating technology. Not only do PCMs reduce and control the temperature within cementitious systems without affecting the rate of early property development but they can also be used as an auto-adaptive technology capable of improving the thermal performance of building envelopes.
The results of this work prove the feasibility of PCMs as a temperature-regulating technology. Not only do PCMs reduce and control the temperature within cementitious systems without affecting the rate of early property development but they can also be used as an auto-adaptive technology capable of improving the thermal performance of building envelopes.
ContributorsAguayo, Matthew Joseph (Author) / Neithalath, Narayanan (Thesis advisor) / Rajan, Subramaniam D. (Committee member) / Mobasher, Barzin (Committee member) / Underwood, Benjamin (Committee member) / Liu, Yongming (Committee member) / Arizona State University (Publisher)
Created2018
Description
There is an ever-increasing demand for higher bandwidth and data rate ensuing from exploding number of radio frequency integrated systems and devices. As stated in the Shannon-Hartley theorem, the maximum achievable data rate of a communication channel is linearly proportional to the system bandwidth. This is the main driving force behind pushing wireless systems towards millimeter-wave frequency range, where larger bandwidth is available at a higher carrier frequency. Observing the Moor’s law, highly scaled complementary metal–oxide–semiconductor (CMOS) technologies provide fast transistors with a high unity power gain frequency which enables operating at millimeter-wave frequency range. CMOS is the compelling choice for digital and signal processing modules which concurrently offers high computation speed, low power consumption, and mass integration at a high manufacturing yield. One of the main shortcomings of the sub-micron CMOS technologies is the low breakdown voltage of the transistors that limits the dynamic range of the radio frequency (RF) power blocks, especially with the power amplifiers. Low voltage swing restricts the achievable output power which translates into low signal to noise ratio and degraded linearity. Extensive research has been done on proposing new design and IC fabrication techniques with the goal of generating higher output power in CMOS technology. The prominent drawbacks of these solutions are an increased die area, higher cost per design, and lower overall efficiency due to lossy passive components. In this dissertation, CMOS compatible metal–semiconductor field-effect transistor (MESFETs) are utilized to put forward a new solution to enhance the power amplifier’s breakdown voltage, gain and maximum output power. Requiring no change to the conventional CMOS process flow, this low cost approach allows direct incorporation of high voltage power MESFETs into silicon. High voltage MESFETs were employed in a cascode structure to push the amplifier’s cutoff frequency and unity power gain frequency to the 5G and K-band frequency range. This dissertation begins with CMOS compatible MESFET modeling and fabrication steps, and culminates in the discussion of amplifier design and optimization methodology, parasitic de-embedding steps, simulation and measurement results, and high resistivity RF substrate characterization.
ContributorsHabibiMehr, Payam (Author) / Thornton, Trevor John (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Formicone, Gabriele (Committee member) / Kitchen, Jennifer (Committee member) / Arizona State University (Publisher)
Created2019