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Description
Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles trapped in the Earth's magnetosphere, the solar wind, and cosmic rays. This constant radiation exposure leads to early end-of-life expectancies

Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles trapped in the Earth's magnetosphere, the solar wind, and cosmic rays. This constant radiation exposure leads to early end-of-life expectancies for many electronic parts. Exposure to ionizing radiation increases the density of oxide and interfacial defects in bipolar oxides leading to an increase in base current in bipolar junction transistors. Radiation-induced excess base current is the primary cause of current gain degradation. Analysis of base current response can enable the measurement of defects generated by radiation exposure. In addition to radiation, the space environment is also characterized by extreme temperature fluctuations. Temperature, like radiation, also has a very strong impact on base current. Thus, a technique for separating the effects of radiation from thermal effects is necessary in order to accurately measure radiation-induced damage in space. This thesis focuses on the extraction of radiation damage in lateral PNP bipolar junction transistors and the space environment. It also describes the measurement techniques used and provides a quantitative analysis methodology for separating radiation and thermal effects on the bipolar base current.
ContributorsCampola, Michael J (Author) / Barnaby, Hugh J (Thesis advisor) / Holbert, Keith E. (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2011
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Description
The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologies in harsh radiation environments has resulted in a new approach to radiation effects mitigation. This approach utilizes simulation to support the design of integrated circuits (ICs) to meet targeted tolerance specifications. Modeling the deleterious impact of ionizing radiation on ICs fabricated

The increased use of commercial complementary metal-oxide-semiconductor (CMOS) technologies in harsh radiation environments has resulted in a new approach to radiation effects mitigation. This approach utilizes simulation to support the design of integrated circuits (ICs) to meet targeted tolerance specifications. Modeling the deleterious impact of ionizing radiation on ICs fabricated in advanced CMOS technologies requires understanding and analyzing the basic mechanisms that result in buildup of radiation-induced defects in specific sensitive regions. Extensive experimental studies have demonstrated that the sensitive regions are shallow trench isolation (STI) oxides. Nevertheless, very little work has been done to model the physical mechanisms that result in the buildup of radiation-induced defects and the radiation response of devices fabricated in these technologies. A comprehensive study of the physical mechanisms contributing to the buildup of radiation-induced oxide trapped charges and the generation of interface traps in advanced CMOS devices is presented in this dissertation. The basic mechanisms contributing to the buildup of radiation-induced defects are explored using a physical model that utilizes kinetic equations that captures total ionizing dose (TID) and dose rate effects in silicon dioxide (SiO2). These mechanisms are formulated into analytical models that calculate oxide trapped charge density (Not) and interface trap density (Nit) in sensitive regions of deep-submicron devices. Experiments performed on field-oxide-field-effect-transistors (FOXFETs) and metal-oxide-semiconductor (MOS) capacitors permit investigating TID effects and provide a comparison for the radiation response of advanced CMOS devices. When used in conjunction with closed-form expressions for surface potential, the analytical models enable an accurate description of radiation-induced degradation of transistor electrical characteristics. In this dissertation, the incorporation of TID effects in advanced CMOS devices into surface potential based compact models is also presented. The incorporation of TID effects into surface potential based compact models is accomplished through modifications of the corresponding surface potential equations (SPE), allowing the inclusion of radiation-induced defects (i.e., Not and Nit) into the calculations of surface potential. Verification of the compact modeling approach is achieved via comparison with experimental data obtained from FOXFETs fabricated in a 90 nm low-standby power commercial bulk CMOS technology and numerical simulations of fully-depleted (FD) silicon-on-insulator (SOI) n-channel transistors.
ContributorsSanchez Esqueda, Ivan (Author) / Barnaby, Hugh J (Committee member) / Schroder, Dieter (Thesis advisor) / Schroder, Dieter K. (Committee member) / Holbert, Keith E. (Committee member) / Gildenblat, Gennady (Committee member) / Arizona State University (Publisher)
Created2011
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Description
Ever reducing time to market, along with short product lifetimes, has created a need to shorten the microprocessor design time. Verification of the design and its analysis are two major components of this design cycle. Design validation techniques can be broadly classified into two major categories: simulation based approaches and

Ever reducing time to market, along with short product lifetimes, has created a need to shorten the microprocessor design time. Verification of the design and its analysis are two major components of this design cycle. Design validation techniques can be broadly classified into two major categories: simulation based approaches and formal techniques. Simulation based microprocessor validation involves running millions of cycles using random or pseudo random tests and allows verification of the register transfer level (RTL) model against an architectural model, i.e., that the processor executes instructions as required. The validation effort involves model checking to a high level description or simulation of the design against the RTL implementation. Formal techniques exhaustively analyze parts of the design but, do not verify RTL against the architecture specification. The focus of this work is to implement a fully automated validation environment for a MIPS based radiation hardened microprocessor using simulation based approaches. The basic framework uses the classical validation approach in which the design to be validated is described in a Hardware Definition Language (HDL) such as VHDL or Verilog. To implement a simulation based approach a number of random or pseudo random tests are generated. The output of the HDL based design is compared against the one obtained from a "perfect" model implementing similar functionality, a mismatch in the results would thus indicate a bug in the HDL based design. Effort is made to design the environment in such a manner that it can support validation during different stages of the design cycle. The validation environment includes appropriate changes so as to support architecture changes which are introduced because of radiation hardening. The manner in which the validation environment is build is highly dependent on the specifications of the perfect model used for comparisons. This work implements the validation environment for two MIPS simulators as the reference model. Two bugs have been discovered in the RTL model, using simulation based approaches through the validation environment.
ContributorsSharma, Abhishek (Author) / Clark, Lawrence (Thesis advisor) / Holbert, Keith E. (Committee member) / Shrivastava, Aviral (Committee member) / Arizona State University (Publisher)
Created2011
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Description
The high penetration of photovoltaic (PV) both at the utility and at the distribu-tion levels, has raised concerns about the reliability of grid-tied inverters of PV power systems. Inverters are generally considered as the weak link in PV power systems. The lack of a dedicated qualification/reliability standard for PV inverters

The high penetration of photovoltaic (PV) both at the utility and at the distribu-tion levels, has raised concerns about the reliability of grid-tied inverters of PV power systems. Inverters are generally considered as the weak link in PV power systems. The lack of a dedicated qualification/reliability standard for PV inverters is a main barrier in realizing higher level of confidence in reliability. Development of a well-accepted design qualification standard specifically for PV inverters will help pave the way for significant improvement in reliability and performance of inverters across the entire industry. The existing standards for PV inverters such as UL 1741 and IEC 62109-1 primarily focus on safety. IEC 62093 discusses inverter qualification but it includes all the balance of sys-tem components and therefore not specific to PV inverters. There are other general stan-dards for distributed generators including the IEEE1547 series of standards which cover major concerns like utility integration but they are not dedicated to PV inverters and are not written from a design qualification point of view. In this thesis, some of the potential requirements for a design qualification standard for PV inverters are addressed. The IEC 62093 is considered as a guideline and the possible inclusions in the framework for a dedicated design qualification standard of PV inverter are discussed. The missing links in existing PV inverter related standards are identified by performing gap analysis. Dif-ferent requirements of small residential inverters compared to large utility-scale systems, and the emerging requirements on grid support features are also considered. Electric stress test is found to be the key missing link and one of the electric stress tests, the surge withstand test is studied in detail. The use of the existing standards for surge withstand test of residential scale PV inverters is investigated and a method to suitably adopt these standards is proposed. The proposed method is studied analytically and verified using simulation. A design criterion for choosing the switch ratings of the inverter that can per-form reliably under the surge environment is derived.
ContributorsAlampoondi Venkataramanan, Sai Balasubramanian (Author) / Ayyanar, Raja (Thesis advisor) / Vittal, Vijay (Committee member) / Heydt, Gerald (Committee member) / Arizona State University (Publisher)
Created2011
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Description
In modern electric power systems, energy management systems (EMSs) are responsi-ble for monitoring and controlling the generation system and transmission networks. State estimation (SE) is a critical `must run successful' component within the EMS software. This is dictated by the high reliability requirements and need to represent the closest real

In modern electric power systems, energy management systems (EMSs) are responsi-ble for monitoring and controlling the generation system and transmission networks. State estimation (SE) is a critical `must run successful' component within the EMS software. This is dictated by the high reliability requirements and need to represent the closest real time model for market operations and other critical analysis functions in the EMS. Tradi-tionally, SE is run with data obtained only from supervisory control and data acquisition (SCADA) devices and systems. However, more emphasis on improving the performance of SE drives the inclusion of phasor measurement units (PMUs) into SE input data. PMU measurements are claimed to be more accurate than conventional measurements and PMUs `time stamp' measurements accurately. These widely distributed devices meas-ure the voltage phasors directly. That is, phase information for measured voltages and currents are available. PMUs provide data time stamps to synchronize measurements. Con-sidering the relatively small number of PMUs installed in contemporary power systems in North America, performing SE with only phasor measurements is not feasible. Thus a hy-brid SE, including both SCADA and PMU measurements, is the reality for contemporary power system SE. The hybrid approach is the focus of a number of research papers. There are many practical challenges in incorporating PMUs into SE input data. The higher reporting rates of PMUs as compared with SCADA measurements is one of the salient problems. The disparity of reporting rates raises a question whether buffering the phasor measurements helps to give better estimates of the states. The research presented in this thesis addresses the design of data buffers for PMU data as used in SE applications in electric power systems. The system theoretic analysis is illustrated using an operating electric power system in the southwest part of the USA. Var-ious instances of state estimation data have been used for analysis purposes. The details of the research, results obtained and conclusions drawn are presented in this document.
ContributorsMurugesan, Veerakumar (Author) / Vittal, Vijay (Committee member) / Heydt, Gerald (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2013
Description
The action/adventure game Grad School: HGH is the final, extended version of a BME Prototyping class project in which the goal was to produce a zombie-themed game that teaches biomedical engineering concepts. The gameplay provides fast paced, exciting, and mildly addicting rooms that the player must battle and survive through,

The action/adventure game Grad School: HGH is the final, extended version of a BME Prototyping class project in which the goal was to produce a zombie-themed game that teaches biomedical engineering concepts. The gameplay provides fast paced, exciting, and mildly addicting rooms that the player must battle and survive through, followed by an engineering puzzle that must be solved in order to advance to the next room. The objective of this project was to introduce the core concepts of BME to prospective students, rather than attempt to teach an entire BME curriculum. Based on user testing at various phases in the project, we concluded that the gameplay was engaging enough to keep most users' interest through the educational puzzles, and the potential for expanding this project to reach an even greater audience is vast.
ContributorsNitescu, George (Co-author) / Medawar, Alexandre (Co-author) / Spano, Mark (Thesis director) / LaBelle, Jeffrey (Committee member) / Guiang, Kristoffer (Committee member) / Barrett, The Honors College (Contributor) / Harrington Bioengineering Program (Contributor)
Created2014-05
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Description
The RADiation sensitive Field Effect Transistor (RADFET) has been conventionally used to measure radiation dose levels. These dose sensors are calibrated in such a way that a shift in threshold voltage, due to a build-up of oxide-trapped charge, can be used to estimate the radiation dose. In order to estimate

The RADiation sensitive Field Effect Transistor (RADFET) has been conventionally used to measure radiation dose levels. These dose sensors are calibrated in such a way that a shift in threshold voltage, due to a build-up of oxide-trapped charge, can be used to estimate the radiation dose. In order to estimate the radiation dose level using RADFET, a wired readout circuit is necessary. Using the same principle of oxide-trapped charge build-up, but by monitoring the change in capacitance instead of threshold voltage, a wireless dose sensor can be developed. This RADiation sensitive CAPacitor (RADCAP) mounted on a resonant patch antenna can then become a wireless dose sensor. From the resonant frequency, the capacitance can be extracted which can be mapped back to estimate the radiation dose level. The capacitor acts as both radiation dose sensor and resonator element in the passive antenna loop. Since the MOS capacitor is used in passive state, characterizing various parameters that affect the radiation sensitivity is essential. Oxide processing technique, choice of insulator material, and thickness of the insulator, critically affect the dose response of the sensor. A thicker oxide improves the radiation sensitivity but reduces the dynamic range of dose levels for which the sensor can be used. The oxide processing scheme primarily determines the interface trap charge and oxide-trapped charge development; controlling this parameter is critical to building a better dose sensor.
ContributorsSrinivasan Gopalan, Madusudanan (Author) / Barnaby, Hugh (Thesis advisor) / Holbert, Keith E. (Committee member) / Yu, Hongyu (Committee member) / Arizona State University (Publisher)
Created2010
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Description
Overhead high voltage transmission lines are widely used around the world to deliver power to customers because of their low losses and high transmission capability. Well-coordinated insulation systems are capable of withstanding lightning and switching surge voltages. However, flashover is a serious issue to insulation systems, especially if the insulator

Overhead high voltage transmission lines are widely used around the world to deliver power to customers because of their low losses and high transmission capability. Well-coordinated insulation systems are capable of withstanding lightning and switching surge voltages. However, flashover is a serious issue to insulation systems, especially if the insulator is covered by a pollution layer. Many experiments in the laboratory have been conducted to investigate this issue. Since most experiments are time-consuming and costly, good mathematical models could contribute to predicting the insulator flashover performance as well as guide the experiments. This dissertation proposes a new statistical model to calculate the flashover probability of insulators under different supply voltages and contamination levels. An insulator model with water particles in the air is simulated to analyze the effects of rain and mist on flashover performance in reality. Additionally, insulator radius and number of sheds affect insulator surface resistivity and leakage distance. These two factors are studied to improve the efficiency of insulator design. This dissertation also discusses the impact of insulator surface hydrophobicity on flashover voltage.

Because arc propagation is a stochastic process, an arc could travel on different paths based on the electric field distribution. Some arc paths jump between insulator sheds instead of travelling along the insulator surfaces. The arc jumping could shorten the leakage distance and intensify the electric field. Therefore, the probabilities of arc jumping at different locations of sheds are also calculated in this dissertation.

The new simulation model is based on numerical electric field calculation and random walk theory. The electric field is calculated by the variable-grid finite difference method. The random walk theory from the Monte Carlo Method is utilized to describe the random propagation process of arc growth. This model will permit insulator engineers to design the reasonable geometry of insulators, to reduce the flashover phenomena under a wide range of operating conditions.
ContributorsHe, Jiahong (Author) / Gorur, Ravi (Thesis advisor) / Ayyanar, Raja (Committee member) / Holbert, Keith E. (Committee member) / Karady, George G. (Committee member) / Arizona State University (Publisher)
Created2016
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Description
Underground transmission cables in power systems are less likely to experience electrical faults, however, resulting outage times are much greater in the event that a failure does occur. Unlike overhead lines, underground cables are not self-healing from flashover events. The faulted section must be located and repaired before the line

Underground transmission cables in power systems are less likely to experience electrical faults, however, resulting outage times are much greater in the event that a failure does occur. Unlike overhead lines, underground cables are not self-healing from flashover events. The faulted section must be located and repaired before the line can be put back into service. Since this will often require excavation of the underground duct bank, the procedure to repair the faulted section is both costly and time consuming. These added complications are the prime motivators for developing accurate and reliable ratings for underground cable circuits.

This work will review the methods by which power ratings, or ampacity, for underground cables are determined and then evaluate those ratings by making comparison with measured data taken from an underground 69 kV cable, which is part of the Salt River Project (SRP) power subtransmission system. The process of acquiring, installing, and commissioning the temperature monitoring system is covered in detail as well. The collected data are also used to evaluate typical assumptions made when determining underground cable ratings such as cable hot-spot location and ambient temperatures.

Analysis results show that the commonly made assumption that the deepest portion of an underground power cable installation will be the hot-spot location does not always hold true. It is shown that distributed cable temperature measurements can be used to locate the proper line segment to be used for cable ampacity calculations.
ContributorsStowers, Travis (Author) / Tylavsky, Daniel (Thesis advisor) / Karady, George G. (Committee member) / Holbert, Keith E. (Committee member) / Arizona State University (Publisher)
Created2015
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Description
With the growing importance of underground power systems and the need for greater reliability of the power supply, cable monitoring and accurate fault location detection has become an increasingly important issue. The presence of inherent random fluctuations in power system signals can be used to extract valuable information about the

With the growing importance of underground power systems and the need for greater reliability of the power supply, cable monitoring and accurate fault location detection has become an increasingly important issue. The presence of inherent random fluctuations in power system signals can be used to extract valuable information about the condition of system equipment. One such component is the power cable, which is the primary focus of this research.

This thesis investigates a unique methodology that allows online monitoring of an underground power cable. The methodology analyzes conventional power signals in the frequency domain to monitor the condition of a power cable.

First, the proposed approach is analyzed theoretically with the help of mathematical computations. Frequency domain analysis techniques are then used to compute the power spectral density (PSD) of the system signals. The importance of inherent noise in the system, a key requirement of this methodology, is also explained. The behavior of resonant frequencies, which are unique to every system, are then analyzed under different system conditions with the help of mathematical expressions.

Another important aspect of this methodology is its ability to accurately estimate cable fault location. The process is online and hence does not require the system to be disconnected from the grid. A single line to ground fault case is considered and the trend followed by the resonant frequencies for different fault positions is observed.

The approach is initially explained using theoretical calculations followed by simulations in MATLAB/Simulink. The validity of this technique is proved by comparing the results obtained from theory and simulation to actual measurement data.
ContributorsGovindarajan, Sudarshan (Author) / Holbert, Keith E. (Thesis advisor) / Heydt, Gerald (Committee member) / Karady, George G. (Committee member) / Arizona State University (Publisher)
Created2016