Matching Items (41)
Filtering by

Clear all filters

151804-Thumbnail Image.png
Description
The partially-depleted (PD) silicon Metal Semiconductor Field Effect Transistor (MESFET) is becoming more and more attractive for analog and RF applications due to its high breakdown voltage. Compared to conventional CMOS high voltage transistors, the silicon MESFET can be fabricated in commercial standard Silicon-on-Insulator (SOI) CMOS foundries without any change

The partially-depleted (PD) silicon Metal Semiconductor Field Effect Transistor (MESFET) is becoming more and more attractive for analog and RF applications due to its high breakdown voltage. Compared to conventional CMOS high voltage transistors, the silicon MESFET can be fabricated in commercial standard Silicon-on-Insulator (SOI) CMOS foundries without any change to the process. The transition frequency of the device is demonstrated to be 45GHz, which makes the MESFET suitable for applications in high power RF power amplifier designs. Also, high breakdown voltage and low turn-on resistance make it the ideal choice for switches in the switching regulator designs. One of the anticipated applications of the MESFET is for the pass device for a low dropout linear regulator. Conventional NMOS and PMOS linear regulators suffer from high dropout voltage, low bandwidth and poor stability issues. In contrast, the N-MESFET pass transistor can provide an ultra-low dropout voltage and high bandwidth without the need for an external compensation capacitor to ensure stability. In this thesis, the design theory and problems of the conventional linear regulators are discussed. N-MESFET low dropout regulators are evaluated and characterized. The error amplifier used a folded cascode architecture with gain boosting. The source follower topology is utilized as the buffer to sink the gate leakage current from the MESFET. A shunt-feedback transistor is added to reduce the output impedance and provide the current adaptively. Measurement results show that the dropout voltage is less than 150 mV for a 1A load current at 1.8V output. Radiation measurements were done for discrete MESFET and fully integrated LDO regulators, which demonstrate their radiation tolerance ability for aerospace applications.
ContributorsChen, Bo (Author) / Thornton, Trevor (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
151406-Thumbnail Image.png
Description
Alkali-activated aluminosilicates, commonly known as "geopolymers", are being increasingly studied as a potential replacement for Portland cement. These binders use an alkaline activator, typically alkali silicates, alkali hydroxides or a combination of both along with a silica-and-alumina rich material, such as fly ash or slag, to form a final product

Alkali-activated aluminosilicates, commonly known as "geopolymers", are being increasingly studied as a potential replacement for Portland cement. These binders use an alkaline activator, typically alkali silicates, alkali hydroxides or a combination of both along with a silica-and-alumina rich material, such as fly ash or slag, to form a final product with properties comparable to or better than those of ordinary Portland cement. The kinetics of alkali activation is highly dependent on the chemical composition of the binder material and the activator concentration. The influence of binder composition (slag, fly ash or both), different levels of alkalinity, expressed using the ratios of Na2O-to-binders (n) and activator SiO2-to-Na2O ratios (Ms), on the early age behavior in sodium silicate solution (waterglass) activated fly ash-slag blended systems is discussed in this thesis. Optimal binder composition and the n values are selected based on the setting times. Higher activator alkalinity (n value) is required when the amount of slag in the fly ash-slag blended mixtures is reduced. Isothermal calorimetry is performed to evaluate the early age hydration process and to understand the reaction kinetics of the alkali activated systems. The differences in the calorimetric signatures between waterglass activated slag and fly ash-slag blends facilitate an understanding of the impact of the binder composition on the reaction rates. Kinetic modeling is used to quantify the differences in reaction kinetics using the Exponential as well as the Knudsen method. The influence of temperature on the reaction kinetics of activated slag and fly ash-slag blends based on the hydration parameters are discussed. Very high compressive strengths can be obtained both at early ages as well as later ages (more than 70 MPa) with waterglass activated slag mortars. Compressive strength decreases with the increase in the fly ash content. A qualitative evidence of leaching is presented through the electrical conductivity changes in the saturating solution. The impact of leaching and the strength loss is found to be generally higher for the mixtures made using a higher activator Ms and a higher n value. Attenuated Total Reflectance-Fourier Transform Infrared Spectroscopy (ATR-FTIR) is used to obtain information about the reaction products.
ContributorsChithiraputhiran, Sundara Raman (Author) / Neithalath, Narayanan (Thesis advisor) / Rajan, Subramaniyam D (Committee member) / Mobasher, Barzin (Committee member) / Arizona State University (Publisher)
Created2012
152088-Thumbnail Image.png
Description
The alkali activation of aluminosilicate materials as binder systems derived from industrial byproducts have been extensively studied due to the advantages they offer in terms enhanced material properties, while increasing sustainability by the reuse of industrial waste and byproducts and reducing the adverse impacts of OPC production. Fly ash and

The alkali activation of aluminosilicate materials as binder systems derived from industrial byproducts have been extensively studied due to the advantages they offer in terms enhanced material properties, while increasing sustainability by the reuse of industrial waste and byproducts and reducing the adverse impacts of OPC production. Fly ash and ground granulated blast furnace slag are commonly used for their content of soluble silica and aluminate species that can undergo dissolution, polymerization with the alkali, condensation on particle surfaces and solidification. The following topics are the focus of this thesis: (i) the use of microwave assisted thermal processing, in addition to heat-curing as a means of alkali activation and (ii) the relative effects of alkali cations (K or Na) in the activator (powder activators) on the mechanical properties and chemical structure of these systems. Unsuitable curing conditions instigate carbonation, which in turn lowers the pH of the system causing significant reductions in the rate of fly ash activation and mechanical strength development. This study explores the effects of sealing the samples during the curing process, which effectively traps the free water in the system, and allows for increased aluminosilicate activation. The use of microwave-curing in lieu of thermal-curing is also studied in order to reduce energy consumption and for its ability to provide fast volumetric heating. Potassium-based powder activators dry blended into the slag binder system is shown to be effective in obtaining very high compressive strengths under moist curing conditions (greater than 70 MPa), whereas sodium-based powder activation is much weaker (around 25 MPa). Compressive strength decreases when fly ash is introduced into the system. Isothermal calorimetry is used to evaluate the early hydration process, and to understand the reaction kinetics of the alkali powder activated systems. A qualitative evidence of the alkali-hydroxide concentration of the paste pore solution through the use of electrical conductivity measurements is also presented, with the results indicating the ion concentration of alkali is more prevalent in the pore solution of potassium-based systems. The use of advanced spectroscopic and thermal analysis techniques to distinguish the influence of studied parameters is also discussed.
ContributorsChowdhury, Ussala (Author) / Neithalath, Narayanan (Thesis advisor) / Rajan, Subramanium D. (Committee member) / Mobasher, Barzin (Committee member) / Arizona State University (Publisher)
Created2013
149494-Thumbnail Image.png
Description
The constant scaling of supply voltages in state-of-the-art CMOS processes has led to severe limitations for many analog circuit applications. Some CMOS processes have addressed this issue by adding high voltage MOSFETs to their process. Although it can be a completely viable solution, it usually requires a changing of the

The constant scaling of supply voltages in state-of-the-art CMOS processes has led to severe limitations for many analog circuit applications. Some CMOS processes have addressed this issue by adding high voltage MOSFETs to their process. Although it can be a completely viable solution, it usually requires a changing of the process flow or adding additional steps, which in turn, leads to an increase in fabrication costs. Si-MESFETs (silicon-metal-semiconductor-field-effect-transistors) from Arizona State University (ASU) on the other hand, have an inherent high voltage capability and can be added to any silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) CMOS process free of cost. This has been proved at five different commercial foundries on technologies ranging from 0.5 to 0.15 μm. Another critical issue facing CMOS processes on insulated substrates is the scaling of the thin silicon channel. Consequently, the future direction of SOI/SOS CMOS transistors may trend away from partially depleted (PD) transistors and towards fully depleted (FD) devices. FD-CMOS are already being implemented in multiple applications due to their very low power capability. Since the FD-CMOS market only figures to grow, it is appropriate that MESFETs also be developed for these processes. The beginning of this thesis will focus on the device aspects of both PD and FD-MESFETs including their layout structure, DC and RF characteristics, and breakdown voltage. The second half will then shift the focus towards implementing both types of MESFETs in an analog circuit application. Aside from their high breakdown ability, MESFETs also feature depletion mode operation, easy to adjust but well controlled threshold voltages, and fT's up to 45 GHz. Those unique characteristics can allow certain designs that were previously difficult to implement or prohibitively expensive using conventional technologies to now be achieved. One such application which benefits is low dropout regulators (LDO). By utilizing an n-channel MESFET as the pass transistor, a LDO featuring very low dropout voltage, fast transient response, and stable operation can be achieved without an external capacitance. With the focus of this thesis being MESFET based LDOs, the device discussion will be mostly tailored towards optimally designing MESFETs for this particular application.
ContributorsLepkowski, William (Author) / Thornton, Trevor (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2010
Description
This is a lectures series on photovoltaics. As the need for electrical energy rises, mankind has struggled to meet its need in a reliable lasting way. Throughout this struggle, solar energy has come to the foreground as a complete solution. However, it has many drawbacks and needs a lot of

This is a lectures series on photovoltaics. As the need for electrical energy rises, mankind has struggled to meet its need in a reliable lasting way. Throughout this struggle, solar energy has come to the foreground as a complete solution. However, it has many drawbacks and needs a lot of development. In addition, the general public is unaware of how solar energy works, how it is made, and how it stands economically. This series of lectures answering those three questions.
ContributorsLeBeau, Edward Sanroma (Author) / Goryll, Michael (Thesis director) / Bowden, Stuart (Committee member) / Dauksher, Bill (Committee member) / Electrical Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2017-05
134797-Thumbnail Image.png
Description
With the progression of different industries moving away from employing secretaries for business professionals and professors, there exists a void in the area of personal assistance. This problem has existing solutions readily available to replace this service, i.e. secretary or personal assistant, tend to range from expensive and useful to

With the progression of different industries moving away from employing secretaries for business professionals and professors, there exists a void in the area of personal assistance. This problem has existing solutions readily available to replace this service, i.e. secretary or personal assistant, tend to range from expensive and useful to inexpensive and not efficient. This leaves a low cost niche into the market of a virtual office assistant or manager to display messages and to help direct people in obtaining contact information. The development of a low cost solution revolves around the software needed to solve the various problems an accessible and user friendly Virtual Interface in which the owner of the Virtual Office Manager/Assistant can communicate to colleagues who are at standby outside of the owner's office and vice versa. This interface will be allowing the owner to describe the status pertaining to their absence or any other message sent to the interface. For example, the status of the owner's work commute can be described with a simple "Running Late" phrase or a message like "Busy come back in 10 minutes". In addition, any individual with an interest to these entries will have the opportunity to respond back because the device will provide contact information. When idle, the device will show supplemental information such as the owner's calendar and name. The scope of this will be the development and testing of solutions to achieve these goals.
ContributorsOffenberger, Spencer Eliot (Author) / Kozicki, Michael (Thesis director) / Goryll, Michael (Committee member) / Electrical Engineering Program (Contributor) / Computer Science and Engineering Program (Contributor) / Barrett, The Honors College (Contributor)
Created2016-12
Description
This is a lectures series on photovoltaics. As the need for electrical energy rises, mankind has struggled to meet its need in a reliable lasting way. Throughout this struggle, solar energy has come to the foreground as a complete solution. However, it has many drawbacks and needs a lot of

This is a lectures series on photovoltaics. As the need for electrical energy rises, mankind has struggled to meet its need in a reliable lasting way. Throughout this struggle, solar energy has come to the foreground as a complete solution. However, it has many drawbacks and needs a lot of development. In addition, the general public is unaware of how solar energy works, how it is made, and how it stands economically. This series of lectures answering those three questions. After two years doing photovoltaic research, and an undergraduate degree in Electrical Engineering, enough expertise has been acquired present on at a late high-school to early college level. Education is key to improving the popularity of using solar energy and the popularity of investing in photovoltaic research. Solar energy is a viable option to satisfy our energy crisis because the materials it requires can quickly be acquired, and there is enough of material to provide a global solution. In addition, the amount of solar energy that hits the surface of the earth in a day is orders of magnitude more than the amount of energy we require. The main goal of this project is to have an effective accessible tool to teach people about solar. Thus, the lectured will be posted on pveducation.com, YouTube, the Barrett repository, and the QUSST website. The content was acquired in four ways. The first way is reading up on the current papers and journals describing the new developments in photovoltaics. The second part is getting in contact with Stuart Bowden and Bill Daukser at Arizona State University's Solar Power Lab as well as the other faculty associated with the Solar Power Lab. There is quite a bit of novel research going on at their lab, as well as a student run pilot line that is actively building solar cells. The third way is reading about solar device physics using device physics textbooks and the PVEducation website made by Stuart Bowden. The forth way is going into ASU's solar power lab.
ContributorsLeBeau, Edward (Author) / Goryll, Michael (Thesis director) / Bowden, Stuart (Committee member) / Dauksher, William (Committee member) / Barrett, The Honors College (Contributor)
Created2017-05
171806-Thumbnail Image.png
Description
In-field characterization of photovoltaics is crucial to understanding performance and degradation mechanisms, subsequently improving overall reliability and lifespans. Current outdoor characterization is often limited by logistical difficulties, variable weather, and requirements to measure during peak production hours. It becomes a challenge to find a characterization technique that is affordable with

In-field characterization of photovoltaics is crucial to understanding performance and degradation mechanisms, subsequently improving overall reliability and lifespans. Current outdoor characterization is often limited by logistical difficulties, variable weather, and requirements to measure during peak production hours. It becomes a challenge to find a characterization technique that is affordable with a low impact on system performance while still providing useful device parameters. For added complexity, this characterization technique must have the ability to scale for implementation in large powerplant applications. This dissertation addresses some of the challenges of outdoor characterization by expanding the knowledge of a well-known indoor technique referred to as Suns-VOC. Suns-VOC provides a pseudo current-voltage curve that is free of any effects from series resistance. Device parameters can be extracted from this pseudo I-V curve, allowing for subsequent degradation analysis. This work introduces how to use Suns-VOC outdoors while normalizing results based on the different effects of environmental conditions. This technique is validated on single-cells, modules, and small arrays with accuracies capable of measuring yearly degradation. An adaptation to Suns-VOC, referred to as Suns-Voltage-Resistor (Suns-VR), is also introduced to complement the results from Suns-VOC. This work can potentially be used to provide a diagnostic tool for outdoor characterization in various applications, including residential, commercial, and industrial PV systems.
ContributorsKillam, Alexander Cameron (Author) / Bowden, Stuart G (Thesis advisor) / Goryll, Michael (Committee member) / Augusto, Andre (Committee member) / Rand, James (Committee member) / Arizona State University (Publisher)
Created2022
168575-Thumbnail Image.png
Description
Metallization of solar cells is a critical process step in the manufacturing of silicon photovoltaics (PV) as it plays a large role in device performance and production cost. Improvements in device performance linked to metallization and reduction in material usage and processing costs will continue to drive next-generation silicon PV

Metallization of solar cells is a critical process step in the manufacturing of silicon photovoltaics (PV) as it plays a large role in device performance and production cost. Improvements in device performance linked to metallization and reduction in material usage and processing costs will continue to drive next-generation silicon PV technology. Chapter 1 introduces the context for the contributions of this thesis by providing background information on silicon PV cell technology, solar cell device physics and characterization, and metallization performance for common silicon cell structures. Chapter 2 presents a thermal model that links sub-bandgap reflectance, an important metric at the rear metal interface, to outdoor module operating temperature. Chapter 3 implements this model experimentally with aluminum back-surface field (Al-BSF), passivated emitter and rear contact (PERC), and passivated emitter rear totally diffused (PERT) mini-modules, where the PERT cells were modified to include an optimized sub-bandgap reflector stack. The dedicated optical layer was a porous low-refractive index silica nanoparticle film and was deposited between the dielectric passivation and full area metallization. This created an appreciable boost in sub-bandgap reflectance over the PERC and Al-BSF cells, which directly lead to cooler operating temperature of the fielded module. Chapter 4 investigates low-temperature Ag metallization approaches to SiO2/polysilicon passivating contacts (TOPCon architecture). The low-temperature Ag sintering process does not damage TOPCon passivation for structures with 40-nm-thick poly-Si but shows higher contact resistivity than sputtered references. This disparity is investigated and the impact of Ag diffusion processes, microstructure changes, ambient gases, and interfacial chemical reactions are evaluated. Chapter 5 investigates sputtered Al metallization to silicon heterojunction contacts of both polarities. This In-free and Ag-free metallization process can achieve low contact resistivity and no passivation loss when annealed between 150-180 °C. The passivation degradation at higher temperatures was studied with high-resolution microscopy and elemental mapping, where the interdiffusion processes were identified. Lastly, Chapter 6 summarizes the contribution of this work.
ContributorsBryan, Jonathan Linden (Author) / Holman, Zachary C (Thesis advisor) / Bertoni, Mariana I (Committee member) / Bowden, Stuart G (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2022
168529-Thumbnail Image.png
Description
To keep up with the increasing demand for solar energy, higher efficiencies are necessary while keeping cost at a minimum. The easiest theoretical way to achieve that is using silicon-based multi-junction solar cells. However, there are major challenges in effectively implementing such a system. Much work has been done recently

To keep up with the increasing demand for solar energy, higher efficiencies are necessary while keeping cost at a minimum. The easiest theoretical way to achieve that is using silicon-based multi-junction solar cells. However, there are major challenges in effectively implementing such a system. Much work has been done recently to integrate III-V with Si for multi-junction solar cell purposes. The focus of this paper is to explore GaP-based dilute nitrides as a possible top cell candidate for Si-based multi-junctions. The direct growth of dilute nitrides in a lattice-matched configuration epitaxially in literature is reviewed. The problems associated with such growths are outlined and pathways to mitigate these problems are presented. The need for a GaP buffer layer between the dilute nitride film and Si is established. Defects in GaP/Si system are explored in detail and a study on pit formation during such growth is performed. Effective suppression of pits in GaP surface grown on Si is achieved. Issues facing GaP-based dilute nitrides in terms of material properties are outlined. Review of these challenges is done and some possible future areas of interest to improve material quality are established. Finally, the growth process of dilute nitrides using Molecular Beam Epitaxy tool is explained. Results for GaNP grown on Si pre and post growth treatments are detailed.
ContributorsMurali, Srinath (Author) / Honsberg, Christiana (Thesis advisor) / Goodnick, Stephen (Committee member) / King, Richard (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2022