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One of the challenges in future semiconductor device design is excessive rise of power dissipation and device temperatures. With the introduction of new geometrically confined device structures like SOI, FinFET, nanowires and continuous incorporation of new materials with poor thermal conductivities in the device active region, the device thermal problem

One of the challenges in future semiconductor device design is excessive rise of power dissipation and device temperatures. With the introduction of new geometrically confined device structures like SOI, FinFET, nanowires and continuous incorporation of new materials with poor thermal conductivities in the device active region, the device thermal problem is expected to become more challenging in coming years. This work examines the degradation in the ON-current due to self-heating effects in 10 nm channel length silicon nanowire transistors. As part of this dissertation, a 3D electrothermal device simulator is developed that self-consistently solves electron Boltzmann transport equation with 3D energy balance equations for both the acoustic and the optical phonons. This device simulator predicts temperature variations and other physical and electrical parameters across the device for different bias and boundary conditions. The simulation results show insignificant current degradation for nanowire self-heating because of pronounced velocity overshoot effect. In addition, this work explores the role of various placement of the source and drain contacts on the magnitude of self-heating effect in nanowire transistors. This work also investigates the simultaneous influence of self-heating and random charge effects on the magnitude of the ON current for both positively and negatively charged single charges. This research suggests that the self-heating effects affect the ON-current in two ways: (1) by lowering the barrier at the source end of the channel, thus allowing more carriers to go through, and (2) via the screening effect of the Coulomb potential. To examine the effect of temperature dependent thermal conductivity of thin silicon films in nanowire transistors, Selberherr's thermal conductivity model is used in the device simulator. The simulations results show larger current degradation because of self-heating due to decreased thermal conductivity . Crystallographic direction dependent thermal conductivity is also included in the device simulations. Larger degradation is observed in the current along the [100] direction when compared to the [110] direction which is in agreement with the values for the thermal conductivity tensor provided by Zlatan Aksamija.
ContributorsHossain, Arif (Author) / Vasileska, Dragica (Thesis advisor) / Ahmed, Shaikh (Committee member) / Bakkaloglu, Bertan (Committee member) / Goodnick, Stephen (Committee member) / Arizona State University (Publisher)
Created2011
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Description
Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles trapped in the Earth's magnetosphere, the solar wind, and cosmic rays. This constant radiation exposure leads to early end-of-life expectancies

Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles trapped in the Earth's magnetosphere, the solar wind, and cosmic rays. This constant radiation exposure leads to early end-of-life expectancies for many electronic parts. Exposure to ionizing radiation increases the density of oxide and interfacial defects in bipolar oxides leading to an increase in base current in bipolar junction transistors. Radiation-induced excess base current is the primary cause of current gain degradation. Analysis of base current response can enable the measurement of defects generated by radiation exposure. In addition to radiation, the space environment is also characterized by extreme temperature fluctuations. Temperature, like radiation, also has a very strong impact on base current. Thus, a technique for separating the effects of radiation from thermal effects is necessary in order to accurately measure radiation-induced damage in space. This thesis focuses on the extraction of radiation damage in lateral PNP bipolar junction transistors and the space environment. It also describes the measurement techniques used and provides a quantitative analysis methodology for separating radiation and thermal effects on the bipolar base current.
ContributorsCampola, Michael J (Author) / Barnaby, Hugh J (Thesis advisor) / Holbert, Keith E. (Committee member) / Vasileska, Dragica (Committee member) / Arizona State University (Publisher)
Created2011
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"No civil discourse, no cooperation; misinformation, mistruth." These were the words of former Facebook Vice President Chamath Palihapitiya who publicly expressed his regret in a 2017 interview over his role in co-creating Facebook. Palihapitiya shared that social media is ripping apart the social fabric of society and he also sounded

"No civil discourse, no cooperation; misinformation, mistruth." These were the words of former Facebook Vice President Chamath Palihapitiya who publicly expressed his regret in a 2017 interview over his role in co-creating Facebook. Palihapitiya shared that social media is ripping apart the social fabric of society and he also sounded the alarm regarding social media’s unavoidable global impact. He is only one of social media’s countless critics. The more disturbing issue resides in the empirical evidence supporting such notions. At least 95% of adolescents own a smartphone and spend an average time of two to four hours a day on social media. Moreover, 91% of 16-24-year-olds use social media, yet youth rate Instagram, Facebook, and Twitter as the worst social media platforms. However, the social, clinical, and neurodevelopment ramifications of using social media regularly are only beginning to emerge in research. Early research findings show that social media platforms trigger anxiety, depression, low self-esteem, and other negative mental health effects. These negative mental health symptoms are commonly reported by individuals from of 18-25-years old, a unique period of human development known as emerging adulthood. Although emerging adulthood is characterized by identity exploration, unbounded optimism, and freedom from most responsibilities, it also serves as a high-risk period for the onset of most psychological disorders. Despite social media’s adverse impacts, it retains its utility as it facilitates identity exploration and virtual socialization for emerging adults. Investigating the “user-centered” design and neuroscience underlying social media platforms can help reveal, and potentially mitigate, the onset of negative mental health consequences among emerging adults. Effectively deconstructing the Facebook, Twitter, and Instagram (i.e., hereafter referred to as “The Big Three”) will require an extensive analysis into common features across platforms. A few examples of these design features include: like and reaction counters, perpetual news feeds, and omnipresent banners and notifications surrounding the user’s viewport. Such social media features are inherently designed to stimulate specific neurotransmitters and hormones such as dopamine, serotonin, and cortisol. Identifying such predacious social media features that unknowingly manipulate and highjack emerging adults’ brain chemistry will serve as a first step in mitigating the negative mental health effects of today’s social media platforms. A second concrete step will involve altering or eliminating said features by creating a social media platform that supports and even enhances mental well-being.

ContributorsGupta, Anay (Author) / Flores, Valerie (Thesis director) / Carrasquilla, Christina (Committee member) / Barnett, Jessica (Committee member) / The Sidney Poitier New American Film School (Contributor) / Computer Science and Engineering Program (Contributor, Contributor) / Barrett, The Honors College (Contributor)
Created2021-05
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In this thesis paper, the mental health consequences of the COVID-19 pandemic are discussed. Chapter 1 discusses what inspired me to write this thesis and follows with a discussion of social isolation during the COVID-19 pandemic. Chapter 2 takes a step back and discusses biological effects of social isolation

In this thesis paper, the mental health consequences of the COVID-19 pandemic are discussed. Chapter 1 discusses what inspired me to write this thesis and follows with a discussion of social isolation during the COVID-19 pandemic. Chapter 2 takes a step back and discusses biological effects of social isolation in general. Chapter 3 discusses the psychological effects of social isolation. Finally, this thesis concludes with a discussion of what can be done to help those experiencing social isolation during the pandemic.

ContributorsHarvey, Kira Rachelle (Author) / Sturgess, Jessica (Thesis director) / Tucker, Derek (Committee member) / School of Music, Dance and Theatre (Contributor) / School of Life Sciences (Contributor) / Barrett, The Honors College (Contributor)
Created2021-05
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My research aims to determine the effectiveness of meditation and sleep applications (apps) on the reduction of anxiety and stress in college students, with a focus on sedative piano music. Results showed a significant reduction of stress and anxiety levels in college students when listening to sedative piano music versus

My research aims to determine the effectiveness of meditation and sleep applications (apps) on the reduction of anxiety and stress in college students, with a focus on sedative piano music. Results showed a significant reduction of stress and anxiety levels in college students when listening to sedative piano music versus non-sedative piano music. Music along with other therapy modalities in meditation and sleep apps show promise in reducing students’ anxiety and stress and promoting their successes.

ContributorsPantha, Bidur (Author) / Brian, Jennifer (Thesis director) / Patten, Kristopher (Committee member) / School of Molecular Sciences (Contributor) / School of Life Sciences (Contributor) / Barrett, The Honors College (Contributor)
Created2021-05
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Lossy compression is a form of compression that slightly degrades a signal in ways that are ideally not detectable to the human ear. This is opposite to lossless compression, in which the sample is not degraded at all. While lossless compression may seem like the best option, lossy compression, which

Lossy compression is a form of compression that slightly degrades a signal in ways that are ideally not detectable to the human ear. This is opposite to lossless compression, in which the sample is not degraded at all. While lossless compression may seem like the best option, lossy compression, which is used in most audio and video, reduces transmission time and results in much smaller file sizes. However, this compression can affect quality if it goes too far. The more compression there is on a waveform, the more degradation there is, and once a file is lossy compressed, this process is not reversible. This project will observe the degradation of an audio signal after the application of Singular Value Decomposition compression, a lossy compression that eliminates singular values from a signal’s matrix.

ContributorsHirte, Amanda (Author) / Kosut, Oliver (Thesis director) / Bliss, Daniel (Committee member) / Electrical Engineering Program (Contributor, Contributor) / Barrett, The Honors College (Contributor)
Created2021-05
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For my thesis/creative project, I created a prototype for a mental health app. Each section of the prototype has a purpose of instilling mindfulness and healthy habits that can promote and lead to sustainable mental health. Throughout the paper I explain my reasoning for starting this project, the science of

For my thesis/creative project, I created a prototype for a mental health app. Each section of the prototype has a purpose of instilling mindfulness and healthy habits that can promote and lead to sustainable mental health. Throughout the paper I explain my reasoning for starting this project, the science of mindfulness and how it can bring about positive mental and physical changes, and the design theory behind the prototype.

ContributorsZaja, Peter (Author) / Sopha, Matthew (Thesis director) / Arrfelt, Mathias (Committee member) / Department of Finance (Contributor) / Dean, W.P. Carey School of Business (Contributor) / Department of Information Systems (Contributor) / Barrett, The Honors College (Contributor)
Created2021-05
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Description
There will always be a need for high current/voltage transistors. A transistor that has the ability to be both or either of these things is the silicon metal-silicon field effect transistor (MESFET). An additional perk that silicon MESFET transistors have is the ability to be integrated into the standard silicon

There will always be a need for high current/voltage transistors. A transistor that has the ability to be both or either of these things is the silicon metal-silicon field effect transistor (MESFET). An additional perk that silicon MESFET transistors have is the ability to be integrated into the standard silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) process flow. This makes a silicon MESFET transistor a very valuable device for use in any standard CMOS circuit that may usually need a separate integrated circuit (IC) in order to switch power on or from a high current/voltage because it allows this function to be performed with a single chip thereby cutting costs. The ability for the MESFET to cost effectively satisfy the needs of this any many other high current/voltage device application markets is what drives the study of MESFET optimization. Silicon MESFETs that are integrated into standard SOI CMOS processes often receive dopings during fabrication that would not ideally be there in a process made exclusively for MESFETs. Since these remnants of SOI CMOS processing effect the operation of a MESFET device, their effect can be seen in the current-voltage characteristics of a measured MESFET device. Device simulations are done and compared to measured silicon MESFET data in order to deduce the cause and effect of many of these SOI CMOS remnants. MESFET devices can be made in both fully depleted (FD) and partially depleted (PD) SOI CMOS technologies. Device simulations are used to do a comparison of FD and PD MESFETs in order to show the advantages and disadvantages of MESFETs fabricated in different technologies. It is shown that PD MESFET have the highest current per area capability. Since the PD MESFET is shown to have the highest current capability, a layout optimization method to further increase the current per area capability of the PD silicon MESFET is presented, derived, and proven to a first order.
ContributorsSochacki, John (Author) / Thornton, Trevor J (Thesis advisor) / Schroder, Dieter (Committee member) / Vasileska, Dragica (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2011
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Description
In semiconductor physics, many properties or phenomena of materials can be brought to light through certain changes in the materials. Having a tool to define new material properties so as to highlight certain phenomena greatly increases the ability to understand that phenomena. The generalized Monte Carlo tool allows the user

In semiconductor physics, many properties or phenomena of materials can be brought to light through certain changes in the materials. Having a tool to define new material properties so as to highlight certain phenomena greatly increases the ability to understand that phenomena. The generalized Monte Carlo tool allows the user to do that by keeping every parameter used to define a material, within the non-parabolic band approximation, a variable in the control of the user. A material is defined by defining its valleys, energies, valley effective masses and their directions. The types of scattering to be included can also be chosen. The non-parabolic band structure model is used. With the deployment of the generalized Monte Carlo tool onto www.nanoHUB.org the tool will be available to users around the world. This makes it a very useful educational tool that can be incorporated into curriculums. The tool is integrated with Rappture, to allow user-friendly access of the tool. The user can freely define a material in an easy systematic way without having to worry about the coding involved. The output results are automatically graphed and since the code incorporates an analytic band structure model, it is relatively fast. The versatility of the tool has been investigated and has produced results closely matching the experimental values for some common materials. The tool has been uploaded onto www.nanoHUB.org by integrating it with the Rappture interface. By using Rappture as the user interface, one can easily make changes to the current parameter sets to obtain even more accurate results.
ContributorsHathwar, Raghuraj (Author) / Vasileska, Dragica (Thesis advisor) / Goodnick, Stephen M (Committee member) / Saraniti, Marco (Committee member) / Arizona State University (Publisher)
Created2011
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Description
In very small electronic devices the alternate capture and emission of carriers at an individual defect site located at the interface of Si:SiO2 of a MOSFET generates discrete switching in the device conductance referred to as a random telegraph signal (RTS) or random telegraph noise (RTN). In this research work,

In very small electronic devices the alternate capture and emission of carriers at an individual defect site located at the interface of Si:SiO2 of a MOSFET generates discrete switching in the device conductance referred to as a random telegraph signal (RTS) or random telegraph noise (RTN). In this research work, the integration of random defects positioned across the channel at the Si:SiO2 interface from source end to the drain end in the presence of different random dopant distributions are used to conduct Ensemble Monte-Carlo ( EMC ) based numerical simulation of key device performance metrics for 45 nm gate length MOSFET device. The two main performance parameters that affect RTS based reliability measurements are percentage change in threshold voltage and percentage change in drain current fluctuation in the saturation region. It has been observed as a result of the simulation that changes in both and values moderately decrease as the defect position is gradually moved from source end to the drain end of the channel. Precise analytical device physics based model needs to be developed to explain and assess the EMC simulation based higher VT fluctuations as experienced for trap positions at the source side. A new analytical model has been developed that simultaneously takes account of dopant number variations in the channel and depletion region underneath and carrier mobility fluctuations resulting from fluctuations in surface potential barriers. Comparisons of this new analytical model along with existing analytical models are shown to correlate with 3D EMC simulation based model for assessment of VT fluctuations percentage induced by a single interface trap. With scaling of devices beyond 32 nm node, halo doping at the source and drain are routinely incorporated to combat the threshold voltage roll-off that takes place with effective channel length reduction. As a final study on this regard, 3D EMC simulation method based computations of threshold voltage fluctuations have been performed for varying source and drain halo pocket length to illustrate the threshold voltage fluctuations related reliability problems that have been aggravated by trap positions near the source at the interface compared to conventional 45 nm MOSFET.
ContributorsAshraf, Nabil Shovon (Author) / Vasileska, Dragica (Thesis advisor) / Schroder, Dieter (Committee member) / Goodnick, Stephen (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2011