Matching Items (29)
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- All Subjects: engineering
- Genre: Academic theses
- Creators: Goryll, Michael
- Creators: Mignolet, Marc
Description
The partially-depleted (PD) silicon Metal Semiconductor Field Effect Transistor (MESFET) is becoming more and more attractive for analog and RF applications due to its high breakdown voltage. Compared to conventional CMOS high voltage transistors, the silicon MESFET can be fabricated in commercial standard Silicon-on-Insulator (SOI) CMOS foundries without any change to the process. The transition frequency of the device is demonstrated to be 45GHz, which makes the MESFET suitable for applications in high power RF power amplifier designs. Also, high breakdown voltage and low turn-on resistance make it the ideal choice for switches in the switching regulator designs. One of the anticipated applications of the MESFET is for the pass device for a low dropout linear regulator. Conventional NMOS and PMOS linear regulators suffer from high dropout voltage, low bandwidth and poor stability issues. In contrast, the N-MESFET pass transistor can provide an ultra-low dropout voltage and high bandwidth without the need for an external compensation capacitor to ensure stability. In this thesis, the design theory and problems of the conventional linear regulators are discussed. N-MESFET low dropout regulators are evaluated and characterized. The error amplifier used a folded cascode architecture with gain boosting. The source follower topology is utilized as the buffer to sink the gate leakage current from the MESFET. A shunt-feedback transistor is added to reduce the output impedance and provide the current adaptively. Measurement results show that the dropout voltage is less than 150 mV for a 1A load current at 1.8V output. Radiation measurements were done for discrete MESFET and fully integrated LDO regulators, which demonstrate their radiation tolerance ability for aerospace applications.
ContributorsChen, Bo (Author) / Thornton, Trevor (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2013
Description
The focus of this investigation includes three aspects. First, the development of nonlinear reduced order modeling techniques for the prediction of the response of complex structures exhibiting "large" deformations, i.e. a geometrically nonlinear behavior, and modeled within a commercial finite element code. The present investigation builds on a general methodology, successfully validated in recent years on simpler panel structures, by developing a novel identification strategy of the reduced order model parameters, that enables the consideration of the large number of modes needed for complex structures, and by extending an automatic strategy for the selection of the basis functions used to represent accurately the displacement field. These novel developments are successfully validated on the nonlinear static and dynamic responses of a 9-bay panel structure modeled within Nastran. In addition, a multi-scale approach based on Component Mode Synthesis methods is explored. Second, an assessment of the predictive capabilities of nonlinear reduced order models for the prediction of the large displacement and stress fields of panels that have a geometric discontinuity; a flat panel with a notch was used for this assessment. It is demonstrated that the reduced order models of both virgin and notched panels provide a close match of the displacement field obtained from full finite element analyses of the notched panel for moderately large static and dynamic responses. In regards to stresses, it is found that the notched panel reduced order model leads to a close prediction of the stress distribution obtained on the notched panel as computed by the finite element model. Two enrichment techniques, based on superposition of the notch effects on the virgin panel stress field, are proposed to permit a close prediction of the stress distribution of the notched panel from the reduced order model of the virgin one. A very good prediction of the full finite element results is achieved with both enrichments for static and dynamic responses. Finally, computational challenges associated with the solution of the reduced order model equations are discussed. Two alternatives to reduce the computational time for the solution of these problems are explored.
ContributorsPerez, Ricardo Angel (Author) / Mignolet, Marc (Thesis advisor) / Oswald, Jay (Committee member) / Spottswood, Stephen (Committee member) / Peralta, Pedro (Committee member) / Jiang, Hanqing (Committee member) / Arizona State University (Publisher)
Created2012
Description
This dissertation presents methods for addressing research problems that currently can only adequately be solved using Quality Reliability Engineering (QRE) approaches especially accelerated life testing (ALT) of electronic printed wiring boards with applications to avionics circuit boards. The methods presented in this research are generally applicable to circuit boards, but the data generated and their analysis is for high performance avionics. Avionics equipment typically requires 20 years expected life by aircraft equipment manufacturers and therefore ALT is the only practical way of performing life test estimates. Both thermal and vibration ALT induced failure are performed and analyzed to resolve industry questions relating to the introduction of lead-free solder product and processes into high reliability avionics. In chapter 2, thermal ALT using an industry standard failure machine implementing Interconnect Stress Test (IST) that simulates circuit board life data is compared to real production failure data by likelihood ratio tests to arrive at a mechanical theory. This mechanical theory results in a statistically equivalent energy bound such that failure distributions below a specific energy level are considered to be from the same distribution thus allowing testers to quantify parameter setting in IST prior to life testing. In chapter 3, vibration ALT comparing tin-lead and lead-free circuit board solder designs involves the use of the likelihood ratio (LR) test to assess both complete failure data and S-N curves to present methods for analyzing data. Failure data is analyzed using Regression and two-way analysis of variance (ANOVA) and reconciled with the LR test results that indicating that a costly aging pre-process may be eliminated in certain cases. In chapter 4, vibration ALT for side-by-side tin-lead and lead-free solder black box designs are life tested. Commercial models from strain data do not exist at the low levels associated with life testing and need to be developed because testing performed and presented here indicate that both tin-lead and lead-free solders are similar. In addition, earlier failures due to vibration like connector failure modes will occur before solder interconnect failures.
ContributorsJuarez, Joseph Moses (Author) / Montgomery, Douglas C. (Thesis advisor) / Borror, Connie M. (Thesis advisor) / Gel, Esma (Committee member) / Mignolet, Marc (Committee member) / Pan, Rong (Committee member) / Arizona State University (Publisher)
Created2012
Description
High Pressure Superheater 1 (HPSH1) is the first heat exchange tube bank inside the Heat Recovery Steam Generator (HRSG) to encounter exhaust flue gas from the gas turbine of a Combined Cycle Power Plant. Steam flowing through the HPSH1 gains heat from the flue gas prior to entering the steam turbine. During cold start-ups, rapid temperature changes in operating condition give rise to significant temperature gradients in the thick-walled components of HPSH1 (manifolds, links, and headers). These temperature gradients produce thermal-structural stresses in the components. The resulting high cycle fatigue is a major concern as this can lead to premature failure of the components. The main objective of this project was to address the thermal-structural stress field induced in HPSH1 during a typical cold start-up transient. To this end, computational fluid dynamics (CFD) was used to carry out the thermal-fluid analysis of HPSH1. The calculated temperature distributions in the component walls were the primary inputs for the finite element (FEA) model that performed structural analysis. Thermal-structural analysis was initially carried out at full-load steady state condition in order to gain confidence in the CFD and FEA methodologies. Results of the full-load steady state thermal-fluid analysis were found in agreement with the temperature values measured at specific locations on the outer surfaces of the inlet links and outlet manifold. It was found from the subsequent structural analysis that peak effective stresses were located at the connecting regions of the components and were well below the allowed stress values. Higher temperature differences were observed between the thick-walled HPSH1 components during the cold start-up transient as compared to the full-load steady state operating condition. This was because of the rapid temperature changes that occurred, especially in the steam temperature at the HPSH1 entry, and the different rates of heating or cooling for components with different wall thicknesses. Results of the transient thermal-fluid analysis will be used in future to perform structural analysis of the HPSH1. The developed CFD and FEA models are capable of analyzing various other transients (e.g., hot start-up and shut-down) and determine their influence on the durability of plant components.
ContributorsHardeep Singh (Author) / Roy, Ramendra P. (Thesis advisor) / Lee, Taewoo (Thesis advisor) / Mignolet, Marc (Committee member) / Arizona State University (Publisher)
Created2012
Description
The constant scaling of supply voltages in state-of-the-art CMOS processes has led to severe limitations for many analog circuit applications. Some CMOS processes have addressed this issue by adding high voltage MOSFETs to their process. Although it can be a completely viable solution, it usually requires a changing of the process flow or adding additional steps, which in turn, leads to an increase in fabrication costs. Si-MESFETs (silicon-metal-semiconductor-field-effect-transistors) from Arizona State University (ASU) on the other hand, have an inherent high voltage capability and can be added to any silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) CMOS process free of cost. This has been proved at five different commercial foundries on technologies ranging from 0.5 to 0.15 μm. Another critical issue facing CMOS processes on insulated substrates is the scaling of the thin silicon channel. Consequently, the future direction of SOI/SOS CMOS transistors may trend away from partially depleted (PD) transistors and towards fully depleted (FD) devices. FD-CMOS are already being implemented in multiple applications due to their very low power capability. Since the FD-CMOS market only figures to grow, it is appropriate that MESFETs also be developed for these processes. The beginning of this thesis will focus on the device aspects of both PD and FD-MESFETs including their layout structure, DC and RF characteristics, and breakdown voltage. The second half will then shift the focus towards implementing both types of MESFETs in an analog circuit application. Aside from their high breakdown ability, MESFETs also feature depletion mode operation, easy to adjust but well controlled threshold voltages, and fT's up to 45 GHz. Those unique characteristics can allow certain designs that were previously difficult to implement or prohibitively expensive using conventional technologies to now be achieved. One such application which benefits is low dropout regulators (LDO). By utilizing an n-channel MESFET as the pass transistor, a LDO featuring very low dropout voltage, fast transient response, and stable operation can be achieved without an external capacitance. With the focus of this thesis being MESFET based LDOs, the device discussion will be mostly tailored towards optimally designing MESFETs for this particular application.
ContributorsLepkowski, William (Author) / Thornton, Trevor (Thesis advisor) / Bakkaloglu, Bertan (Committee member) / Goryll, Michael (Committee member) / Ayyanar, Raja (Committee member) / Arizona State University (Publisher)
Created2010
Description
A major concern in the operation of present-day gas turbine engines is the ingestion of hot mainstream gas into rotor-stator disk cavities of the high-pressure turbine stages. Although the engines require high gas temperature at turbine entry for good performance efficiency, the ingested gas shortens the lives of the cavity internals, particularly that of the rotor disks. Steps such as installing seals at the disk rims and injecting purge (secondary) air bled from the compressor discharge into the cavities are implemented to reduce the gas ingestion. Although there are advantages to the above-mentioned steps, the performance of a gas turbine engine is diminished by the purge air bleed-off. This then requires that the cavity sealing function be achieved with as low a purge air supply rate as possible. This, in turn, renders imperative an in-depth understanding of the pressure and velocity fields in the main gas path and within the disk cavities. In this work, experiments were carried out in a model 1.5-stage (stator-rotor-stator) axial air turbine to study the ingestion of main air into the aft, rotor-stator, disk cavity. The cavity featured rotor and stator rim seals with radial clearance and axial overlap and an inner labyrinth seal. First, time-average static pressure distribution was measured in the main gas path upstream and downstream of the rotor as well as in the cavity to ensure that a nominally steady run condition had been achieved. Main gas ingestion was determined by measuring the concentration distribution of tracer gas (CO2) in the cavity. To map the cavity fluid velocity field, particle image velocimetry was employed. Results are reported for two main air flow rates, two rotor speeds, and four purge air flow rates.
ContributorsJunnarkar, Nihal (Author) / Roy, Ramendra P (Thesis advisor) / Mignolet, Marc (Committee member) / Lee, Taewoo (Committee member) / Arizona State University (Publisher)
Created2010
Description
The technology and science capabilities of SmallSats continue to grow with the increase of capabilities in commercial off the shelf components. However, the maturation of SmallSat hardware has also led to an increase in component power consumption, this poses an issue with using traditional passive thermal management systems (radiators, thermal straps, etc.) to regulate high-power components. High power output becomes limited in order to maintain components within their allowable temperature ranges. The aim of this study is to explore new methods of using additive manufacturing to enable the usage of heat pipe structures on SmallSat platforms up to 3U’s in size. This analysis shows that these novel structures can increase the capabilities of SmallSat platforms by allowing for larger in-use heat loads from a nominal power density of 4.7 x 10^3 W/m3 to a higher 1.0 x 10^4 W/m3 , an order of magnitude increase. In addition, the mechanical properties of the SmallSat structure are also explored to characterize effects to the mechanical integrity of the spacecraft. The results show that the advent of heat pipe integration to the structures of SmallSats will lead to an increase in thermal management capabilities compared to the current state-of-the-art systems, while not reducing the structural integrity of the spacecraft. In turn, this will lead to larger science and technology capabilities for a field that is growing in both the education and private sectors.
ContributorsAcuna, Antonio (Author) / Das, Jnaneshwar (Thesis advisor) / Phelan, Patrick (Thesis advisor) / Mignolet, Marc (Committee member) / Arizona State University (Publisher)
Created2022
Description
In-field characterization of photovoltaics is crucial to understanding performance and degradation mechanisms, subsequently improving overall reliability and lifespans. Current outdoor characterization is often limited by logistical difficulties, variable weather, and requirements to measure during peak production hours. It becomes a challenge to find a characterization technique that is affordable with a low impact on system performance while still providing useful device parameters. For added complexity, this characterization technique must have the ability to scale for implementation in large powerplant applications. This dissertation addresses some of the challenges of outdoor characterization by expanding the knowledge of a well-known indoor technique referred to as Suns-VOC. Suns-VOC provides a pseudo current-voltage curve that is free of any effects from series resistance. Device parameters can be extracted from this pseudo I-V curve, allowing for subsequent degradation analysis. This work introduces how to use Suns-VOC outdoors while normalizing results based on the different effects of environmental conditions. This technique is validated on single-cells, modules, and small arrays with accuracies capable of measuring yearly degradation. An adaptation to Suns-VOC, referred to as Suns-Voltage-Resistor (Suns-VR), is also introduced to complement the results from Suns-VOC. This work can potentially be used to provide a diagnostic tool for outdoor characterization in various applications, including residential, commercial, and industrial PV systems.
ContributorsKillam, Alexander Cameron (Author) / Bowden, Stuart G (Thesis advisor) / Goryll, Michael (Committee member) / Augusto, Andre (Committee member) / Rand, James (Committee member) / Arizona State University (Publisher)
Created2022
Description
To keep up with the increasing demand for solar energy, higher efficiencies are necessary while keeping cost at a minimum. The easiest theoretical way to achieve that is using silicon-based multi-junction solar cells. However, there are major challenges in effectively implementing such a system. Much work has been done recently to integrate III-V with Si for multi-junction solar cell purposes. The focus of this paper is to explore GaP-based dilute nitrides as a possible top cell candidate for Si-based multi-junctions. The direct growth of dilute nitrides in a lattice-matched configuration epitaxially in literature is reviewed. The problems associated with such growths are outlined and pathways to mitigate these problems are presented. The need for a GaP buffer layer between the dilute nitride film and Si is established. Defects in GaP/Si system are explored in detail and a study on pit formation during such growth is performed. Effective suppression of pits in GaP surface grown on Si is achieved. Issues facing GaP-based dilute nitrides in terms of material properties are outlined. Review of these challenges is done and some possible future areas of interest to improve material quality are established. Finally, the growth process of dilute nitrides using Molecular Beam Epitaxy tool is explained. Results for GaNP grown on Si pre and post growth treatments are detailed.
ContributorsMurali, Srinath (Author) / Honsberg, Christiana (Thesis advisor) / Goodnick, Stephen (Committee member) / King, Richard (Committee member) / Goryll, Michael (Committee member) / Arizona State University (Publisher)
Created2022
Description
In this dissertation, the nanofabrication process is characterized for fabrication of nanostructure on surface of silicon and gallium phosphide using silica nanosphere lithography (SNL) and metal assisted chemical etching (MACE) process. The SNL process allows fast process time and well defined silica nanosphere monolayer by spin-coating process after mixing N,N-dimethyl-formamide (DMF) solvent. The MACE process achieves the high aspect ratio structure fabrication using the reaction between metal and wet chemical. The nanostructures are fabricated on Si surface for enhanced light management, but, without proper surface passivation those gains hardly impact the performance of the solar cell. The surface passivation of nanostructures is challenging, not only due to larger surface areas and aspect ratios, but also has a direct result of the nanofabrication processes. In this research, the surface passivation of silicon nanostructures is improved by modifying the silica nanosphere lithography (SNL) and the metal assisted chemical etching (MACE) processes, frequently used to fabricate nanostructures. The implementation of a protective silicon oxide layer is proposed prior to the lithography process to mitigate the impact of the plasma etching during the SNL. Additionally, several adhesion layers are studied, chromium (Cr), nickel (Ni) and titanium (Ti) with gold (Au), used in the MACE process. The metal contamination is one of main damage and Ti makes the mitigation of metal contamination. Finally, a new chemical etching step is introduced, using potassium hydroxide at room temperature, to smooth the surface of the nanostructures after the MACE process. This chemical treatment allows to improve passivation by surface area control and removing surface defects. In this research, I demonstrate the Aluminum Oxide (Al2O3) passivation on nanostructure using atomic layer deposition (ALD) process. 10nm of Al2O3 layer makes effective passivation on nanostructure with optimized post annealing in forming gas (N2/H2) environment. However, 10nm thickness is not suitable for hetero structure because of carrier transportation. For carrier transportation, ultrathin Al2O3 (≤ 1nm) layer is used for passivation, but effective passivation is not achieved because of insufficient hydrogen contents. This issue is solved to use additional ultrathin SiO2 (1nm) below Al2O3 layer and hydrogenation from doped a-Si:H.
Moreover, the nanostructure is creased on gallium phosphide (GaP) by SNL and MACE process. The fabrication process is modified by control of metal layer and MACE solution.
ContributorsKim, Sangpyeong (Author) / Honsberg, Christiana (Thesis advisor) / Bowden, Stuart (Committee member) / Goryll, Michael (Committee member) / Augusto, Andre (Committee member) / Arizona State University (Publisher)
Created2021