Matching Items (7)
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- All Subjects: Electric Fields
- All Subjects: Simulation
- Creators: Holbert, Keith E.
Description
New technologies enable the exploration of space, high-fidelity defense systems, lighting fast intercontinental communication systems as well as medical technologies that extend and improve patient lives. The basis for these technologies is high reliability electronics devised to meet stringent design goals and to operate consistently for many years deployed in the field. An on-going concern for engineers is the consequences of ionizing radiation exposure, specifically total dose effects. For many of the different applications, there is a likelihood of exposure to radiation, which can result in device degradation and potentially failure. While the total dose effects and the resulting degradation are a well-studied field and methodologies to help mitigate degradation have been developed, there is still a need for simulation techniques to help designers understand total dose effects within their design. To that end, the work presented here details simulation techniques to analyze as well as predict the total dose response of a circuit. In this dissertation the total dose effects are broken into two sub-categories, intra-device and inter-device effects in CMOS technology. Intra-device effects degrade the performance of both n-channel and p-channel transistors, while inter-device effects result in loss of device isolation. In this work, multiple case studies are presented for which total dose degradation is of concern. Through the simulation techniques, the individual device and circuit responses are modeled post-irradiation. The use of these simulation techniques by circuit designers allow predictive simulation of total dose effects, allowing focused design changes to be implemented to increase radiation tolerance of high reliability electronics.
ContributorsSchlenvogt, Garrett (Author) / Barnaby, Hugh (Thesis advisor) / Goodnick, Stephen (Committee member) / Vasileska, Dragica (Committee member) / Holbert, Keith E. (Committee member) / Arizona State University (Publisher)
Created2014
Description
This thesis focuses on the influence of a grounded back electrode on the breakdown characteristics. The back electrode is an electrode which attaches at the back side of solid insulation. Insulation with grounded back electrode is a common type of insulation which is adopted in many high voltage power devices. While most of the power equipment work under AC voltage, most of the research on back electrode is focused on the DC voltage. Therefore, it is necessary to deeply investigate the influence of the back electrode under AC applied voltage. To investigate the influence of back electrode, the research is separated into two phases, which are the experiment phase and the electric field analysis phase. In the experiments, the breakdown voltages for both with and without back electrode are obtained. The experimental results indicate that the grounded back electrode does have impact on the breakdown characteristics. Then with the breakdown voltage, based on real experiment model, the electric field is analyzed using computer software. From the field simulation result, it is found that the back electrode also influences the electric field distribution. The inter relationship between the electric field and breakdown voltage is the key to explain all the results and phenomena observed during the experiment. Additionally, the influence of insulation barrier on breakdown is also investigated. Compared to the case without ground electrode, inserting a barrier into the gap can more significantly improve breakdown voltage.
ContributorsLiu, Jiajun (Author) / Karady, George G. (Thesis advisor) / Ayyanar, Raja (Committee member) / Holbert, Keith E. (Committee member) / Arizona State University (Publisher)
Created2014
Description
Overhead high voltage transmission lines are widely used around the world to deliver power to customers because of their low losses and high transmission capability. Well-coordinated insulation systems are capable of withstanding lightning and switching surge voltages. However, flashover is a serious issue to insulation systems, especially if the insulator is covered by a pollution layer. Many experiments in the laboratory have been conducted to investigate this issue. Since most experiments are time-consuming and costly, good mathematical models could contribute to predicting the insulator flashover performance as well as guide the experiments. This dissertation proposes a new statistical model to calculate the flashover probability of insulators under different supply voltages and contamination levels. An insulator model with water particles in the air is simulated to analyze the effects of rain and mist on flashover performance in reality. Additionally, insulator radius and number of sheds affect insulator surface resistivity and leakage distance. These two factors are studied to improve the efficiency of insulator design. This dissertation also discusses the impact of insulator surface hydrophobicity on flashover voltage.
Because arc propagation is a stochastic process, an arc could travel on different paths based on the electric field distribution. Some arc paths jump between insulator sheds instead of travelling along the insulator surfaces. The arc jumping could shorten the leakage distance and intensify the electric field. Therefore, the probabilities of arc jumping at different locations of sheds are also calculated in this dissertation.
The new simulation model is based on numerical electric field calculation and random walk theory. The electric field is calculated by the variable-grid finite difference method. The random walk theory from the Monte Carlo Method is utilized to describe the random propagation process of arc growth. This model will permit insulator engineers to design the reasonable geometry of insulators, to reduce the flashover phenomena under a wide range of operating conditions.
Because arc propagation is a stochastic process, an arc could travel on different paths based on the electric field distribution. Some arc paths jump between insulator sheds instead of travelling along the insulator surfaces. The arc jumping could shorten the leakage distance and intensify the electric field. Therefore, the probabilities of arc jumping at different locations of sheds are also calculated in this dissertation.
The new simulation model is based on numerical electric field calculation and random walk theory. The electric field is calculated by the variable-grid finite difference method. The random walk theory from the Monte Carlo Method is utilized to describe the random propagation process of arc growth. This model will permit insulator engineers to design the reasonable geometry of insulators, to reduce the flashover phenomena under a wide range of operating conditions.
ContributorsHe, Jiahong (Author) / Gorur, Ravi (Thesis advisor) / Ayyanar, Raja (Committee member) / Holbert, Keith E. (Committee member) / Karady, George G. (Committee member) / Arizona State University (Publisher)
Created2016
Description
Flash memories are critical for embedded devices to operate properly but are susceptible to radiation effects, which make flash memory a key factor to improve the reliability of circuitry. This thesis describes the simulation techniques used to analyze and predict total ionizing dose (TID) effects on 90-nm technology Silicon Storage Technology (SST) SuperFlash Generation 3 devices. Silvaco Atlas is used for both device level design and simulation purposes.
The simulations consist of no radiation and radiation modeling. The no radiation modeling details the cell structure development and characterizes basic operations (read, erase and program) of a flash memory cell. The program time is observed to be approximately 10 μs while the erase time is approximately 0.1 ms.
The radiation modeling uses the fixed oxide charge method to analyze the TID effects on the same flash memory cell. After irradiation, a threshold voltage shift of the flash memory cell is observed. The threshold voltages of a programmed cell and an erased cell are reduced at an average rate of 0.025 V/krad.
The use of simulation techniques allows designers to better understand the TID response of a SST flash memory cell and to predict cell level TID effects without performing the costly in-situ irradiation experiments. The simulation and experimental results agree qualitatively. In particular, simulation results reveal that ‘0’ to ‘1’ errors but not ‘1’ to ‘0’ retention errors occur; likewise, ‘0’ to ‘1’ errors dominate experimental testing, which also includes circuitry effects that can cause ‘1’ to ‘0’ failures. Both simulation and experimental results reveal flash memory cell TID resilience to about 200 krad.
The simulations consist of no radiation and radiation modeling. The no radiation modeling details the cell structure development and characterizes basic operations (read, erase and program) of a flash memory cell. The program time is observed to be approximately 10 μs while the erase time is approximately 0.1 ms.
The radiation modeling uses the fixed oxide charge method to analyze the TID effects on the same flash memory cell. After irradiation, a threshold voltage shift of the flash memory cell is observed. The threshold voltages of a programmed cell and an erased cell are reduced at an average rate of 0.025 V/krad.
The use of simulation techniques allows designers to better understand the TID response of a SST flash memory cell and to predict cell level TID effects without performing the costly in-situ irradiation experiments. The simulation and experimental results agree qualitatively. In particular, simulation results reveal that ‘0’ to ‘1’ errors but not ‘1’ to ‘0’ retention errors occur; likewise, ‘0’ to ‘1’ errors dominate experimental testing, which also includes circuitry effects that can cause ‘1’ to ‘0’ failures. Both simulation and experimental results reveal flash memory cell TID resilience to about 200 krad.
ContributorsChen, Yitao (Author) / Holbert, Keith E. (Thesis advisor) / Clark, Lawrence T. (Committee member) / Allee, David R. (Committee member) / Arizona State University (Publisher)
Created2016
Description
In sub transmission systems, many more raptor deaths have been recorded near metal poles rather than wood poles. The metal pole, which is reliable in structure but also grounded, may increase the risk of electrocution when raptors perch on the insulator. This thesis focuses on evaluating the effectiveness of the raptor guard to prevent both debilitating and lethal electrocutions to local wildlife in 69 kV sub transmission systems. First, the two-dimensional (2D) finite difference methods (FDM) were proposed to solve the Poisson and Laplace equations, which describe the electric field. Second, the verification of the FDM algorithm was made based on a parallel-plate capacitor model. Then, the potential and the electric field were simulated by the raptor-insulator model to evaluate the possibility of flashover and leakage current under various conceivable scenarios. Third, several dielectric performance experiments were implemented to gain insight into the physical property of the raptor guard developed by the Salt River Project (SRP) as an example. The proposed initial-tracking-voltage and time-to-track experiments tested the ability of the guard, which is designed to prevent the tracking phenomenon under a contaminated situation such as rain, fog, and snow. A data acquisition also collected the leakage current data for the comparison of maximum raptor tolerance. Furthermore, the puncture voltage of this guard material was performed by the dielectric breakdown voltage experiment in an oil-covered container. With the combination of the model simulation and the experiments in this research, the raptor guard was proven to be practical and beneficial in sub transmission system.
ContributorsShen, Zui (Author) / Gorur, Ravi (Thesis advisor) / Karady, George G. (Committee member) / Holbert, Keith E. (Committee member) / Arizona State University (Publisher)
Created2016
Description
Currently, autonomous vehicles are being evaluated by how well they interact with humans without evaluating how well humans interact with them. Since people are not going to unanimously switch over to using autonomous vehicles, attention must be given to how well these new vehicles signal intent to human drivers from the driver’s point of view. Ineffective communication will lead to unnecessary discomfort among drivers caused by an underlying uncertainty about what an autonomous vehicle is or isn’t about to do. Recent studies suggest that humans tend to fixate on areas of higher uncertainty so scenarios that have a higher number of vehicle fixations can be reasoned to be more uncertain. We provide a framework for measuring human uncertainty and use the framework to measure the effect of empathetic vs non-empathetic agents. We used a simulated driving environment to create recorded scenarios and manipulate the autonomous vehicle to include either an empathetic or non-empathetic agent. The driving interaction is composed of two vehicles approaching an uncontrolled intersection. These scenarios were played to twelve participants while their gaze was recorded to track what the participants were fixating on. The overall intent was to provide an analytical framework as a tool for evaluating autonomous driving features; and in this case, we choose to evaluate how effective it was for vehicles to have empathetic behaviors included in the autonomous vehicle decision making. A t-test analysis of the gaze indicated that empathy did not in fact reduce uncertainty although additional testing of this hypothesis will be needed due to the small sample size.
ContributorsGreenhagen, Tanner Patrick (Author) / Yang, Yezhou (Thesis director) / Jammula, Varun C (Committee member) / Computer Science and Engineering Program (Contributor, Contributor) / Barrett, The Honors College (Contributor)
Created2021-05
Description
The work presented in this manuscript has the overarching theme of radiation. The two forms of radiation of interest are neutrons, i.e. nuclear, and electric fields. The ability to detect such forms of radiation have significant security implications that could also be extended to very practical industrial applications. The goal is therefore to detect, and even image, such radiation sources.
The method to do so revolved around the concept of building large-area sensor arrays. By covering a large area, we can increase the probability of detection and gather more data to build a more complete and clearer view of the environment. Large-area circuitry can be achieved cost-effectively by leveraging the thin-film transistor process of the display industry. With production of displays increasing with the explosion of mobile devices and continued growth in sales of flat panel monitors and television, the cost to build a unit continues to decrease.
Using a thin-film process also allows for flexible electronics, which could be taken advantage of in-house at the Flexible Electronics and Display Center. Flexible electronics implies new form factors and applications that would not otherwise be possible with their single crystal counterparts. To be able to effectively use thin-film technology, novel ways of overcoming the drawbacks of the thin-film process, namely the lower performance scale.
The two deliverable devices that underwent development are a preamplifier used in an active pixel sensor for neutron detection and a passive electric field imaging array. This thesis will cover the theory and process behind realizing these devices.
The method to do so revolved around the concept of building large-area sensor arrays. By covering a large area, we can increase the probability of detection and gather more data to build a more complete and clearer view of the environment. Large-area circuitry can be achieved cost-effectively by leveraging the thin-film transistor process of the display industry. With production of displays increasing with the explosion of mobile devices and continued growth in sales of flat panel monitors and television, the cost to build a unit continues to decrease.
Using a thin-film process also allows for flexible electronics, which could be taken advantage of in-house at the Flexible Electronics and Display Center. Flexible electronics implies new form factors and applications that would not otherwise be possible with their single crystal counterparts. To be able to effectively use thin-film technology, novel ways of overcoming the drawbacks of the thin-film process, namely the lower performance scale.
The two deliverable devices that underwent development are a preamplifier used in an active pixel sensor for neutron detection and a passive electric field imaging array. This thesis will cover the theory and process behind realizing these devices.
ContributorsChung, Hugh E (Author) / Allee, David R. (Thesis advisor) / Papandreou-Suppappola, Antonia (Committee member) / Holbert, Keith E. (Committee member) / Arizona State University (Publisher)
Created2015